WO2008055390A1 - Laser ultra-violet de pompage de troisième harmonique à semi-conducteur à double face d'extrémité - Google Patents

Laser ultra-violet de pompage de troisième harmonique à semi-conducteur à double face d'extrémité Download PDF

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Publication number
WO2008055390A1
WO2008055390A1 PCT/CN2006/003334 CN2006003334W WO2008055390A1 WO 2008055390 A1 WO2008055390 A1 WO 2008055390A1 CN 2006003334 W CN2006003334 W CN 2006003334W WO 2008055390 A1 WO2008055390 A1 WO 2008055390A1
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Prior art keywords
laser
harmonic
fundamental
cavity
ultraviolet laser
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PCT/CN2006/003334
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English (en)
Chinese (zh)
Inventor
Yunfeng Gao
Fengping Lv
Junhui Zheng
Yao Wu
Shuzhen Ma
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Shenzhen Han's Laser Technology Co., Limited
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Publication of WO2008055390A1 publication Critical patent/WO2008055390A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/0804—Transverse or lateral modes
    • H01S3/0805—Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094049—Guiding of the pump light
    • H01S3/094053—Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching

Definitions

  • the invention belongs to the field of laser technology and relates to a semiconductor laser diode double-pumped three-harmonic ultraviolet laser. Background technique
  • the third harmonic ultraviolet laser has always been a technical difficulty in the field of solid-state lasers, but because it has a wide range of applications in many practical applications, the 'third harmonic ultraviolet laser has become a hot spot of research.
  • the process of processing materials using a third-harmonic ultraviolet laser is called the “photo-etching” effect.
  • High-energy photons directly destroy the chemical bond of the material into a “cold” process, and the heat-affected area is minimal.
  • visible and infrared lasers use heat that is focused to the processing site to melt the material, which conducts heat to the surrounding material, creating a harmful heat-affected zone.
  • the third harmonic UV laser is focused, focusing
  • the dots can be as small as submicron, which makes the metal and polymer micro-processing more advantageous. It can process small parts and achieve higher energy density even at low pulse energy levels. Material processing. Therefore, the third harmonic UV laser has good "cold processing” and "focusing” properties, which combine to make it possible to process extremely small parts. Moreover, most materials can effectively absorb ultraviolet lasers, thus The third harmonic UV laser has greater flexibility and a wider range of applications and can be used to process materials that cannot be processed by infrared and visible lasers.
  • the third harmonic ultraviolet laser Compared with the deep ultraviolet laser with a wavelength of 266 nm, the third harmonic ultraviolet laser has more mature technology, and its performance is more stable. It can output higher laser power and laser peak power, which can be very good on various processed materials.
  • the method of laser cavity mixing outside the cavity is often used. This method is difficult to obtain a high-power, high-efficiency triple harmonic output.
  • lens focusing is usually used to enhance the power density of the fundamental wave, but the focused beam is easily nonlinear.
  • the destruction of the crystal film layer and the crystal itself affects the output of the total harmonic power; meanwhile, the out-of-cavity mixing is a one-way behavior, and the fundamental wave and the second harmonic pass through the triple frequency crystal at one time, and the conversion efficiency is low.
  • the three-harmonic ultraviolet lasers that are commonly used today can be classified into gas, lamp-pumped, side-pumped, and end-pumped.
  • Gas UV lasers are bulky, inefficient, and equipment is too complex to maintain; lamp-pumped UV lasers are less efficient and less reliable; side-pumped and end-pumped Ultraviolet lasers are similar in size and operation, but in contrast, the beam quality and conversion efficiency of end-pumped UV lasers are unmatched by side-pumped UV lasers.
  • the traditional semiconductor-pumped three-harmonic ultraviolet laser has certain defects in technical design, which makes the stability and beam quality of the UV laser a difficult problem to be solved.
  • the cavity design of the laser in order to obtain better optical quality, it is usually necessary to use a convex mirror as a cavity mirror of the laser cavity, as shown in Chinese Patent Application No. 200410073574. 8, but the laser formed by the convex mirror The resonant cavity is sensitive, and the precision of the mechanical design is difficult to achieve. There is a possibility that the laser power or the quality of the laser beam is degraded due to vibration or deformation during the handling process, so it is not suitable for productization.
  • the pumping method for generating the fundamental light is mostly the structure of the double-pumped monolithic gain medium crystal, as shown in US Pat. No. 6,587,487.
  • the thermal stress generated by the thermal effect in the crystal of the gain medium cannot exceed the limitation of the fracture stress of the crystal.
  • the maximum pump power per unit area of the gain medium crystal and the output power are limited ("Power scaling of diode-pumped Nd:" YV04 Lasers, IEEE J Quantum Electronics, 2002, 38 (9): 129 ⁇ 1299), so it is difficult to obtain high UV laser output. Summary of the invention
  • the technical problem to be solved by the present invention is to provide a semiconductor double-end pumped third harmonic ultraviolet laser which utilizes the strong fundamental wave light in the cavity to obtain high efficiency and high beam quality.
  • a semiconductor double-end pumped third harmonic ultraviolet laser comprising a semiconductor pump module, an optical coupling system, a fundamental gain medium crystal, a second harmonic nonlinear crystal, and a third harmonic non-
  • the linear crystal, the wave plate, the modulation device, the laser cavity mirror, the ultraviolet laser mirror, and the pump light output from the semiconductor pump module are transmitted to the optical coupling system, and are collimated by the optical coupling system and coupled to the fundamental gain medium crystal.
  • the end face, the "C" axis direction of the fundamental gain medium crystal is placed vertically upward; the fundamental gain medium crystal absorbs the pump light energy to generate stimulated emission, and the emitted light is selected by the laser cavity mirror in the laser cavity.
  • the fundamental frequency beam that forms a high beam quality is modulated by the modulation device to obtain a modulated laser with high peak power.
  • the modulated fundamental laser passes through the second harmonic nonlinear crystal to obtain the green laser output and is polarized by the wave plate. Rotation; the fundamental polarization laser and the green laser of the same polarization state are injected into the third harmonic nonlinear crystal for mixing, and three are obtained.
  • Harmonic ultraviolet laser output; the remaining green laser passes through the third harmonic nonlinear crystal again under the reflection of the resonant cavity mirror; the third harmonic ultraviolet laser that is converted into the first time is reflected by the resonant cavity mirror and the second conversion
  • the third harmonic ultraviolet laser is outputted together with the ultraviolet laser mirror to output the laser cavity outside the cavity, and the third harmonic violet is obtained. External laser output.
  • Two fundamental gain pump crystals are separately pumped by two semiconductor pump modules.
  • the center wavelength of the semiconductor pump module is 808 nm or 880 nm, and the semiconductor pump module of other wavelengths may be selected according to the selected fundamental frequency gain medium crystal.
  • the fundamental gain medium crystal is Nd : YV04, or is Nd : YLF, Nd : YAG, Nd : Glass, Yb : YAG, Er : YAG crystal.
  • the "C” axis direction of the fundamental gain medium crystal used is placed vertically upwards, or it can be rotated 90° in the "C" axis direction, that is, horizontally.
  • the second harmonic nonlinear crystal is a class I LB0, and may also be a class I BB0, a class I CLB0 or a class I nonlinear crystal.
  • the third harmonic nonlinear crystal is a class I LB0, and may also be a class I BB0, a class I CLB0 or a class I nonlinear crystal.
  • the end face of the fundamental gain medium crystal is plated with an anti-reflection film for pump light.
  • the modulation device is an acousto-optic modulation device, and may also be an electro-optic modulation device or an absorption passive Q-switch.
  • the laser cavity mirrors are all plane mirrors, so that the laser cavity forms a flat cavity, and the laser cavity can also adopt a cavity structure composed of a double cavity, a flat cavity or other lenses.
  • the laser cavity structure is an "L” cavity structure, and a “V” angle folding cavity structure may also be used.
  • the laser further includes an optical fiber that transmits the pump light output from the semiconductor laser diode to the optical coupling system, and the pump light output from the semiconductor laser diode can also be directly transmitted to the optical coupling system without passing through the optical fiber.
  • the laser further includes a prism positioned on the optical path to separate the third harmonic ultraviolet laser from the other light to obtain a third harmonic ultraviolet laser output.
  • Two laser diodes are respectively used to pump two fundamental gain medium crystals, which reduces the pump power of each crystal and avoids the high power density on a single crystal.
  • the problem of damage At the same time, within the threshold of the fundamental wave gain medium crystal damage threshold, the pump power of the semiconductor pump module can be appropriately increased to obtain a higher ultraviolet laser output; the bases under different pump powers are calculated and measured.
  • the thermal lens effect of the wave gain medium crystal, the spatial distribution of the Gaussian mode transfer in the cavity is calculated by the optical matrix method, and the laser cavity mirror is designed to ensure that the fundamental frequency laser can maintain stable oscillation under the large range of thermal lens.
  • the intracavity frequency doubling and mixing method are utilized to make full use of the characteristics of the strong fundamental wave in the cavity, thereby obtaining the ultraviolet laser output with high conversion efficiency;
  • the length of the crystal makes the unconverted fundamental frequency optical power and the converted green laser power maintain a reasonable ratio, so that the laser in the cavity is fully converted into an ultraviolet laser, which improves the conversion efficiency of the ultraviolet laser;
  • the conversion efficiency of the third harmonic is further improved; under the condition of ensuring high efficiency and high beam quality of the ultraviolet laser, the cavity mirror constituting the laser cavity is designed as a plane mirror, avoiding the use of the convex mirror The instability factor is brought about, and the mechanical design difficulty is reduced.
  • FIG. 1 is a schematic view showing the structure of a semiconductor double-end pumped third harmonic ultraviolet laser according to the present invention.
  • Fig. 2 is a theoretical calculation result of the change of the thermal lens when the fundamental wave gain medium crystal of the present invention absorbs different pump powers.
  • Fig. 3 is a graph showing the variation of the ultraviolet laser power with current of a semiconductor double-end pumped third harmonic ultraviolet laser of the present invention.
  • Fig. 5 is a view showing a plurality of laser pulse waveforms measured by a semiconductor double-end pumped third harmonic ultraviolet laser having a power of 6 W and a Q-switched frequency of 25 kHz.
  • Fig. 6 is a graph showing the variation of the laser power over time at 5 W of the semiconductor double-end pumped third harmonic ultraviolet laser of the invention. detailed description
  • the semiconductor laser diode double-end pumped third harmonic ultraviolet laser of the present invention comprises: a semiconductor pumping module 1 (2 in total), an optical fiber 2 (2 in total), and an optical coupling system 3 (2 sets in total) ), laser cavity 16 (composed of mirrors 4, 9 and 14), fundamental gain dielectric crystals 5 and 6 (2 in total), modulation device 7, aperture 8, second harmonic nonlinear crystal 10, wave Sheet 11 (WP: ⁇ @ 1064 nm & A /2 i532 nm), ultraviolet laser mirror 12, third harmonic nonlinear crystal 13, and triangular prism 15.
  • the selected semiconductor pump module 1 is a semiconductor laser diode with a center wavelength of 808 ran or 880 nm, and may be other center wavelength semiconductor pump laser diodes selected according to the selected fundamental gain medium crystal.
  • the fundamental laser is a 1064 nm oscillator, and the pump light output from the semiconductor pump module 1 is transmitted from the optical fiber 2 to the optical coupling system 3, and is directly coupled to the fundamental gain medium crystals 5 and 6 by the optical affinity system 3. End face; the "C" axis of the fundamental gain medium crystals 5 and 6 are placed vertically to ensure their generation The polarization direction of the fundamental laser is vertical; the fundamental gain medium crystals 5 and 6 absorb the pump light energy to generate stimulated emission, and the emitted light in the laser cavity 16 is selected to form a high beam quality fundamental frequency.
  • the beam under the modulation of the modulation device 7, produces a modulated laser of high peak power.
  • the thermal lens effect of the fundamental gain medium crystals 5 and 6 under different pump powers is calculated and measured in detail, and the intracavity Gaussian mode transfer is calculated by the optical matrix method.
  • the spatial distribution, the cavity mirror of the laser cavity of the laser is designed to ensure that the fundamental frequency laser can maintain stable oscillation under the wide range of thermal lens.
  • the modulated fundamental laser is subjected to frequency doubling of the second harmonic nonlinear crystal 10 to obtain a green laser output whose polarization direction is horizontal; the horizontally polarized green laser is rotated 90 by the wave plate 11 After °, it becomes vertically polarized light in the same direction as the polarization state of the fundamental light; Reasonably designing the length of the secondary nonlinear crystal 10, so that the unconverted fundamental frequency optical power and the converted green laser power are kept reasonable.
  • the ratio is such that the laser in the cavity is fully converted into an ultraviolet laser, which improves the conversion efficiency of the ultraviolet laser.
  • the fundamental frequency laser and the green laser which are vertically polarized are mixed by the third harmonic nonlinear crystal 13 to obtain a third harmonic ultraviolet laser; the remaining green laser is again reflected by the reflection of the plane mirror 14 Through the third harmonic nonlinear crystal 13, the green laser acts twice on the third harmonic nonlinear crystal 13 to further improve the conversion efficiency of the third harmonic; the third harmonic ultraviolet laser that is first converted into the planar cavity mirror 14 The reflection effect is outputted to the laser cavity 16 by the reflection of the ultraviolet laser mirror 12 together with the third harmonic ultraviolet laser converted into the second time. Under the separation of the prism 15, a third harmonic ultraviolet laser output is obtained.
  • the fundamental wave gain dielectric crystals 5 and 6 are plated with an antireflection coating for pumping light and 1064 nm laser to increase the absorption of the pump light;
  • the fundamental gain medium used is Nd: YV04, It is also possible to use a fundamental gain medium crystal such as Nd:YLF, Nd:YAG, Nd: Glass, Yb:YAG, Er:YAG; the both ends of the modulation device 7 are plated with a 1064 ⁇ antireflection film, and the modulation device used is sound and light.
  • the modulation device may also be an electro-optic modulation device and an absorbing passive Q-switch;
  • the second harmonic nonlinear crystal 10 is a Class I LB0 crystal, and both ends are plated with a 532 nm and 1064 nm two-color anti-reflection film, or may be a Class I BB0, Class I CLB0 or other Class I nonlinear crystals, such as LiNb304 crystals;
  • Third harmonic nonlinear crystals 13 are Class I LB0 crystals, both ends are plated with 355nm, 532nm and 1064nm three-color antireflection coatings, or Class I BB0 , Class I CLB0 or other Class I nonlinear crystals; Wave plates can also be removed, using nonlinear crystals such as LB0 of II.
  • the mirrors 4 and 9 constituting the calender resonator 16 are plated with a high-transparent film for pumping light, and a high-reflection film for 1064 rai laser; the mirror 14 is plated with a three-color high-reflection film for 1064 nm, 532 nm, and 355 nm;
  • the mirrors 4, 9, and 14 are all plane mirrors, so the laser cavity is a flat cavity; it is also possible to use a cavity with a double cavity or a flat cavity.
  • the laser cavity structure used in the present invention is a cavity structure, and is also suitable for a "V" cavity or other angle folding cavity structure.
  • the fundamental gain medium crystal and the harmonic nonlinear crystal are wrapped in indium foil and placed in a water-cooled heat sink crystal holder.
  • the pump power of the laser diode can be increased within the threshold range of the fundamental gain medium crystal damage, and the power density of the fundamental frequency laser in the cavity can be further increased, thereby obtaining a higher power ultraviolet laser. Output.
  • the thermal lens effect of fundamental wave gain dielectric crystals 5 and 6 at different pump powers is calculated and measured.
  • the spatial distribution of intracavity Gaussian mode transfer is calculated by optical matrix method.
  • the laser cavity mirror is designed to ensure the basis.
  • the frequency laser can maintain stable oscillation under the wide range of thermal lens;
  • Two laser diodes are used to pump two fundamental gain medium crystals 5 and 6, respectively, which reduces the pump power of each crystal and avoids the problem of being easily damaged due to excessive power density on a single crystal. ;
  • the pump power of the laser diode can be increased within the threshold of the fundamental wave gain medium crystal damage threshold, and the power density of the fundamental frequency laser in the cavity can be further increased, thereby obtaining higher power.
  • the green laser acts twice on the third harmonic nonlinear crystal 13, further improving the conversion efficiency of the third harmonic
  • the mirrors 4, 9 and 14 constituting the laser cavity 16 are designed as plane mirrors, which avoids the instability factor caused by the use of the convex mirror, and simultaneously reduces Small mechanical design difficulty.
  • Double-end pumped third harmonic ultraviolet laser of semiconductor pump module established according to the above technical solution
  • the triple-frequency ultraviolet laser power is greater than 6W
  • the conversion efficiency of the fundamental laser to the second harmonic laser is 87%
  • the conversion efficiency of the second harmonic laser to the third harmonic laser is 72%
  • the minimum laser pulse width is less than 15ns.
  • Figure 2 is the basis of the present invention The theoretical calculation results of the thermal lens change when the wave gain medium crystal absorbs different pump powers.
  • Figure 3 is a graph showing the variation of the ultraviolet laser power with current of the semiconductor double-end pumped third harmonic ultraviolet laser according to the present invention.
  • the single-end pumped three-harmonic ultraviolet laser has a power of 6W and a Q-switched frequency of 25KHz.
  • Figure 5 is a semiconductor double-end pumped third harmonic UV laser with a power of 6W and Q-switched. A plurality of laser pulse waveforms measured at a frequency of 25 KHz.
  • Figure 6 is a graph showing the variation of laser power with time at 5 W of a semiconductor double-end pumped third harmonic ultraviolet laser of the present invention.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

Un laser ultra-violet de pompage de troisième harmonique à semi-conducteur à double face d'extrémité comprend: un module de pompage (1) à semi-conducteur, un système d'accouplement optique (3), des cristaux de fréquence fondamentale (5,6) de gain moyen, un cristal de deuxième harmonique non-linéaire (10), un cristal de troisième harmonique non-linéaire (13), un guide d'ondes plan (11), un dispositif de modulation (7), des miroirs à cavité résonnante laser (4,9,14) et un miroir reflétant le faisceau laser ultra-violet (12). La lumière de pompage émise par module (1), transmise au système de couplage optique, puis collimatée et focalisée par ledit système de couplage optique, frappe directement les faces d'extrémité des cristaux de fréquence fondamentale (5,6) de gain moyen La lumière émise par les cristaux de fréquence fondamentale (5,6) de gain moyen excités forme un faisceau lumineux de fréquence fondamentale via la sélection du mode des miroirs à cavité laser résonnante (4,9,14) et le faisceau laser modulé est obtenu par la fonction de modulation du dispositif de modulation. Le faisceau laser de fréquence fondamentale modulée est converti en faisceau laser vert par le cristal de deuxième harmonique non-linéaire puis polarisé par le guide d'ondes plan. Le faisceau laser de fréquence fondamentale et le faisceau de lumière verte, de même polarisation frappent le cristal de troisième harmonique non-linéaire (13), ce qui additionne les fréquences et produit le faisceau laser UV de troisième harmonique.
PCT/CN2006/003334 2006-11-09 2006-12-08 Laser ultra-violet de pompage de troisième harmonique à semi-conducteur à double face d'extrémité WO2008055390A1 (fr)

Applications Claiming Priority (2)

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CNA2006100635518A CN101179176A (zh) 2006-11-09 2006-11-09 半导体双端面泵浦三次谐波紫外激光器
CN200610063551.8 2006-11-09

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CN115425509B (zh) * 2022-11-03 2023-03-24 山东省科学院激光研究所 基于v型动态稳定腔设计的短脉冲激光器及激光装备
CN116780336B (zh) * 2023-06-25 2024-02-09 重庆师范大学 利用半导体材料非线性效应实现自锁模的超快紫外激光器
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CN102208747A (zh) * 2011-05-09 2011-10-05 中国电子科技集团公司第十一研究所 一种固体激光器
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