WO2008014750A3 - Dünnfilm-halbleiterbauelement und bauelement-verbund - Google Patents

Dünnfilm-halbleiterbauelement und bauelement-verbund Download PDF

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Publication number
WO2008014750A3
WO2008014750A3 PCT/DE2007/001273 DE2007001273W WO2008014750A3 WO 2008014750 A3 WO2008014750 A3 WO 2008014750A3 DE 2007001273 W DE2007001273 W DE 2007001273W WO 2008014750 A3 WO2008014750 A3 WO 2008014750A3
Authority
WO
WIPO (PCT)
Prior art keywords
component
thin
film semiconductor
semiconductor component
assembly
Prior art date
Application number
PCT/DE2007/001273
Other languages
English (en)
French (fr)
Other versions
WO2008014750A2 (de
Inventor
Siegfried Herrmann
Berthold Hahn
Original Assignee
Osram Opto Semiconductors Gmbh
Siegfried Herrmann
Berthold Hahn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Siegfried Herrmann, Berthold Hahn filed Critical Osram Opto Semiconductors Gmbh
Priority to JP2009522082A priority Critical patent/JP5517616B2/ja
Priority to KR1020097004412A priority patent/KR101386303B1/ko
Priority to US12/376,425 priority patent/US8872330B2/en
Priority to CN200780036707.6A priority patent/CN101542752B/zh
Priority to EP07785643A priority patent/EP2047525A2/de
Publication of WO2008014750A2 publication Critical patent/WO2008014750A2/de
Publication of WO2008014750A3 publication Critical patent/WO2008014750A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Die Erfindung beschreibt ein Dünnfilm-Halbleiterbauelemen mit einer Trägerschicht und einem auf der Trägerschicht angeordneten Schichtenstapel, der ein Halbleitermaterial enthält und zur Emission von Strahlung vorgesehen ist, wobei auf der Trägerschicht eine zur Kühlung des Halbleiterbauelements vorgesehene Wärmeableitungsschicht aufgebracht ist. Ferner beschreibt die Erfindung einen Bauelement-Verbund.
PCT/DE2007/001273 2006-08-04 2007-07-16 Dünnfilm-halbleiterbauelement und bauelement-verbund WO2008014750A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009522082A JP5517616B2 (ja) 2006-08-04 2007-07-16 薄膜半導体構成素子および構成素子結合体
KR1020097004412A KR101386303B1 (ko) 2006-08-04 2007-07-16 박막 반도체 소자 및 소자 어셈블리
US12/376,425 US8872330B2 (en) 2006-08-04 2007-07-16 Thin-film semiconductor component and component assembly
CN200780036707.6A CN101542752B (zh) 2006-08-04 2007-07-16 薄膜半导体元件及元件复合结构
EP07785643A EP2047525A2 (de) 2006-08-04 2007-07-16 Dünnfilm-halbleiterbauelement und bauelement-verbund

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102006036543.7 2006-08-04
DE102006036543 2006-08-04
DE102007004303.3 2007-01-29
DE102007004303A DE102007004303A1 (de) 2006-08-04 2007-01-29 Dünnfilm-Halbleiterbauelement und Bauelement-Verbund

Publications (2)

Publication Number Publication Date
WO2008014750A2 WO2008014750A2 (de) 2008-02-07
WO2008014750A3 true WO2008014750A3 (de) 2008-06-12

Family

ID=38596017

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2007/001273 WO2008014750A2 (de) 2006-08-04 2007-07-16 Dünnfilm-halbleiterbauelement und bauelement-verbund

Country Status (8)

Country Link
US (1) US8872330B2 (de)
EP (1) EP2047525A2 (de)
JP (1) JP5517616B2 (de)
KR (1) KR101386303B1 (de)
CN (1) CN101542752B (de)
DE (1) DE102007004303A1 (de)
TW (1) TWI378571B (de)
WO (1) WO2008014750A2 (de)

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DE102005055293A1 (de) 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
DE102007017113A1 (de) 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007041896A1 (de) 2007-09-04 2009-03-05 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102008013030A1 (de) 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008026841A1 (de) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102008030815A1 (de) 2008-06-30 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen
KR101755966B1 (ko) * 2013-02-28 2017-07-07 미쓰비시덴키 가부시키가이샤 방열 구조 및 광 송수신기
JP2014204029A (ja) * 2013-04-08 2014-10-27 立山科学工業株式会社 Ｌｅｄ実装用基板
DE102014104230A1 (de) 2014-03-26 2015-10-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauteil und Verfahren zur Herstellung eines strahlungsemittierenden Bauteils
JP2018513033A (ja) 2015-03-23 2018-05-24 ストラ エンソ オーワイジェイ エステル化またはエーテル化されたデンプンおよび無機鉱物を含むインクジェット用インク受容性コーティング
DE102017112223A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
DE102019106546A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil
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US8872330B2 (en) 2014-10-28
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JP2009545863A (ja) 2009-12-24
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WO2008014750A2 (de) 2008-02-07
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TWI378571B (en) 2012-12-01
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