WO2007125875A1 - ブランクス、ブラックマトリクスおよびカラーフィルタ - Google Patents
ブランクス、ブラックマトリクスおよびカラーフィルタ Download PDFInfo
- Publication number
- WO2007125875A1 WO2007125875A1 PCT/JP2007/058764 JP2007058764W WO2007125875A1 WO 2007125875 A1 WO2007125875 A1 WO 2007125875A1 JP 2007058764 W JP2007058764 W JP 2007058764W WO 2007125875 A1 WO2007125875 A1 WO 2007125875A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- atomic
- film
- light
- shielding film
- content
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/05—Bonding or intermediate layer characterised by chemical composition, e.g. sealant or spacer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
Definitions
- the present invention relates to a black matrix for TFT arrays or color filters used for flat panel displays including color liquid crystal display devices.
- Flat panel displays such as color liquid crystal display devices are increasingly used as information devices, monitor displays of notebook computers, and video displays such as TV images.
- a color filter substrate used in the color liquid crystal display device is provided with a black matrix.
- This black matrix prevents color mixing of the three primary colors of red, green, and blue that are adjacent to each other in the color filter to prevent color mixture and improve color display contrast by shielding the periphery of the display area of each color pixel. It is generally used for the purpose of improving display quality.
- a black matrix material in the manufacturing process of a color liquid crystal display device, (1) it is easy to manufacture, (2) it can form a strong film, (3) it is stable and reliable as a liquid crystal display panel.
- Metal chromium (Cr) films are usually used because of their high performance and (4) sufficient light shielding properties.
- a method of forming a laminated film structure by depositing a chromium oxide film, a chromium oxynitride film, an oxygenated chromium carbide film, etc. on at least one of the upper and lower sides of the metal chromium film. It is taken.
- These metal chromium films and the like form a pattern by using photolithography technology to form a black matrix.
- the optical density (OD (Optical Density) value) in the visible light region is about 4 with a relatively high degree of light shielding and relatively easy.
- OD Optical Density
- a metallic chromium film, etc. there is a problem that a great deal of labor and cost is required for waste liquid management.
- a photosensitive resin film is exemplified as an alternative to the metal chromium film.
- a film thickness of about 1.5 to 2. O / zm is required, while the red, green, and blue colored layers that form the color filter.
- the level difference of the overlapping part formed to prevent color loss at the periphery of the pixel is about 2 to 3 m high, resulting in flat color filters.
- the degree worse since the film thickness of the resin film is large, the pattern may be chipped during development or overhang during the photolithographic process, making it difficult to form an accurate black matrix. ,.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2002-107537
- the film using the material disclosed in Patent Document 1 has a possibility of being unsuitable as a product due to inferior durability such as water resistance and fluttering property. This is particularly noticeable for recent high-definition and highly reliable black matrices and color filters.
- the present invention relates to a black matrix excellent in durability such as water resistance and patterning properties while maintaining characteristics such as low reflectivity, a color filter formed therefrom, and blanks for forming black matrix, It is an object to provide a black matrix formed by patterning the blank and a color filter using the black matrix.
- the present invention is a black matrix blank in which a light-shielding film and a low-reflection film are laminated on a substrate, wherein the uppermost layer of Brantas is a light-shielding film or a low-reflection film, and the Ni content of the uppermost layer is all Provides black matrix blank with 80 to 92 atomic percent of metal component, Mo content of top layer is 8 to 15 atomic percent of all metal components, and top layer does not contain Ta To do.
- the invention's effect is a black matrix blank in which a light-shielding film and a low-reflection film are laminated on a substrate, wherein the uppermost layer of Brantas is a light-shielding film or a low-reflection film, and the Ni content of the uppermost layer is all Provides black matrix blank with 80 to 92 atomic percent of metal component, Mo content of top layer is 8 to 15 atomic percent of all metal components, and top layer does not contain Ta To do.
- the black matrix in the present invention is preferable because it does not contain Ta in the uppermost layer, so that durability such as water resistance and patterning properties are improved. Also, the etching rate is good. Furthermore, by using Ni-Mo alloy as the main component, it is possible to form a strong film that has sufficient light shielding properties, is easy to manufacture.
- the blanks before patterning the black matrix have the same effects as described above.
- the color filter formed from the black matrix of the present invention has improved display quality compared to the conventional color filter.
- FIG. 1 is a schematic cross-sectional view showing a blank 1 embodiment of the present invention.
- FIG. 2 is another schematic cross-sectional view showing a blank 1 embodiment of the present invention.
- the blank of the present invention is a precursor for producing a black matrix, and a black matrix can be formed by patterning the blank.
- the blank of the present invention is obtained by laminating a light shielding film and a low reflection film on a substrate.
- the light-shielding film is a film that shields the periphery of the display area of each color pixel in order to prevent color loss of each of the three primary colors of red, green, and blue that are adjacent to the color filter.
- Low It is a film that is formed in order to give a projectile property.
- the blanks of the present invention are obtained by arbitrarily laminating a light-shielding film and a low-reflection film. However, in order to demand low reflectivity, it is preferable to laminate a low-reflection film and a light-shielding film in this order on a substrate.
- a low reflection film may be further provided on the light shielding film.
- layers other than the light-shielding film and the low-reflection film may be provided to the extent that they can be used as a black matrix.
- the blank of the present invention is characterized in that the uppermost layer of Brantas does not contain Ta.
- the uppermost layer refers to a film having the largest substrate strength, and refers to a film that comes into contact with a photoresist when blanks are patterned.
- the uppermost layer is the light shielding film 13.
- the blank 1 is formed by laminating the first low-reflection film 21, the light-shielding film 22, and the second low-reflection film 23 in this order on the substrate, the uppermost layer is the second low-reflection film.
- a reflective film 23 is formed.
- the composition of the first low reflection film 21 and the second low reflection film 23 may be the same or different.
- Ta does not contain means that the content of Ta in the film is 0.1 atomic% or less with respect to the total metal elements when the film is evaluated by ICP emission spectrometry.
- the top layer does not contain Ta, which is preferable because it improves water resistance and patterning properties.
- a film that does not contain Ta is preferably 5 nm or more in order to exhibit effects such as water resistance and patterning properties.
- Ta itself is a metal excellent in durability such as water resistance. Therefore, the use or addition of Ta for the purpose of improving durability has hitherto been performed.
- Ta alloy is considered to be one of the components constituting the black matrix for the same reason. It is estimated that it is used.
- the low-reflective film and the Z or light-shielding film do not contain metal chrome. Furthermore, the entire film constituting the blanks does not contain metal chromium. It is preferable. If it does not contain metallic chromium, the content of metallic chromium in the film It means 0.1 atomic% or less relative to the genus element.
- Patent Document 1 describes that the addition amount of Ta is preferably 0.5% by mass or more, and that the reason is that the etching rate is close to that of the chromium metal film. Are listed. It is estimated that the reason for “close to the chromium metal film” was that it was important to use the conventional equipment and etching conditions as they were, and that it was necessary to contain Ta. However, as a result of detailed evaluation of patterning properties, it may actually be a problem to include Ta itself, and it may be particularly problematic when it is the top layer. It has been found that there is sex.
- the substrate used in the present invention may be a curved surface that is not necessarily flat and plate-shaped, or may be an irregular shape.
- Specific examples of the substrate include a transparent glass substrate, a ceramic substrate, and a plastic substrate.
- a glass substrate is preferred because of its strength and heat resistance.
- Examples of the glass substrate include a colorless and transparent soda lime glass substrate, a quartz glass substrate, a borosilicate glass substrate, and an alkali-free glass substrate.
- the thickness of the glass substrate is preferably 0.2 to 1.5 mm from the viewpoint of strength and transmittance.
- the light shielding film contains a Ni-Mo alloy as a main component.
- the total content of Ni and Mo in the light shielding film is preferably 90 atomic% or more, particularly 93 atomic% or more with respect to the total metal elements in the light shielding film, from the viewpoint of durability and patterning properties.
- composition and characteristics of the light shielding film is for the case where the light shielding film is the uppermost layer, and the light shielding film is not the uppermost layer! It does not have to be a composition or property. However, even if the light shielding film is not the top layer, it is preferable to satisfy the following composition and characteristics.
- the Ni content in the light shielding film is 80 to 92 atomic% with respect to the total metal components in the light shielding film from the viewpoint of durability and workability. If the Ni content is less than 80 atomic%, the durability deteriorates. On the other hand, if it exceeds 92 atomic%, the etching rate becomes slow and it becomes difficult to form a black matrix by patterning. Furthermore, if it exceeds 92 atomic%, the target becomes magnetic and it becomes difficult to form blanks by sputtering.
- the Ni content in the light-shielding film is more preferably 85 to 92 atomic%.
- the Mo content in the light-shielding film is 8 to 15 atomic% with respect to the total metal components in the light-shielding film from the viewpoint of durability and workability. If the Mo content is less than 8 atomic%, the etching rate becomes slow, and it becomes difficult to form a black matrix by patterning. If it exceeds 15 atomic%, durability (particularly water resistance) deteriorates. Furthermore, if it exceeds 15 atomic%, the etching rate becomes too fast, and it becomes difficult to produce stably when patterning to form a black matrix. Contrary to conventional wisdom, since the patterning property deteriorates when Ta enters, the Ta content has been reduced to a certain value or less, but that alone makes it difficult to control the etching rate. The present inventors have found that the above range is the optimum value.
- the light-shielding film may contain other metals besides Ni and Mo! /!
- the other metal is preferably Fe.
- the content of Fe is preferably 0.5 to 6 atomic% with respect to all metal components in the light shielding film.
- the light-shielding film is composed of one or more metals such as Al, Ti, Zr, V, W, Co and the like within a range that does not impair the effects of the present invention, for example, all metal components in the light-shielding film. May be contained at a content of 15 atomic% or less.
- the light-shielding film of the present invention preferably further contains nitrogen. Since the etching rate can be increased by adding nitrogen, it is effective for controlling the etching rate and can improve the turning ability.
- the nitrogen content is 0.5 to 10 atomic% and 1 to 6 atomic% with respect to all elements of the light shielding film. If it is less than 2 atomic%, it is difficult to obtain an effect of improving patterning properties. If it exceeds 50 atomic%, the light shielding property of the light shielding film is lowered, which is not preferable. Nitrogen can be added to the light-shielding film by adding nitrogen gas to the sputtering gas when formed by sputtering.
- the light shielding film may be not only one layer but also two or more layers. When there are two or more light shielding films, the layer that is not the uppermost layer is not particularly limited.
- each layer has the above-described configuration even if it is not the uppermost layer.
- a gradient film in which the composition of the light shielding film gradually changes in the film thickness direction may be used.
- composition and characteristics of the light shielding film are preferably in the above range not only when the light shielding film is in the uppermost layer but also when it is not in the uppermost layer.
- the low reflection film used in the Brantas of the present invention contains a Ni-Mo alloy as a main component.
- the total content of Ni and Mo in the low reflection film is preferably 90 atomic% or more, particularly 93 atomic% or more with respect to all metal atoms, from the viewpoint of durability and patterning properties.
- composition and characteristics of the low-reflection film is V when the low-reflection film is the uppermost layer, and if the low-reflection film is not the uppermost layer, the following is not always necessary: Such a composition need not be characteristic. However, even when the low-reflection film is not the uppermost layer, it is preferable to satisfy the following composition and characteristics.
- the Ni content of the low reflection film is 80 to 92 atomic% with respect to the total metal components in the low reflection film. If the Ni content is less than 80 atomic%, the durability deteriorates. On the other hand, if it exceeds 92 atomic%, the etching rate becomes slow and it becomes difficult to form black matrix by patterning. Furthermore, if it exceeds 92 atomic%, the target becomes magnetic, and it becomes difficult to form blanks by sputtering.
- the Ni content of the low reflection film is preferably 85 to 92 atomic% with respect to all metal components in the low reflection film.
- the Mo content of the low reflection film is 8 to 15 atomic% with respect to the total metal components in the low reflection film.
- the Mo content is less than 8 atomic%, the etching rate becomes slow, and it becomes difficult to form a black matrix by patterning. If it exceeds 15 atomic%, durability (especially water resistance) deteriorates. Furthermore, if it exceeds 15 atomic%, the etching rate becomes too fast, and it becomes difficult to produce stably when patterning to form a black matrix.
- the patterning speed is the same as that of the light shielding film. Therefore, it is not always necessary to be within the above range.
- the Ni content with respect to all metal components of the low reflection film is preferably 70 to 92 atomic% from the viewpoint of durability and workability.
- the Mo content with respect to all metal components of the low-reflection film is preferably 8 to 30 atomic% from the viewpoint of durability and workability.
- the low reflection film contains other metals in addition to Ni and Mo! /.
- the other metal is preferably Fe.
- the Fe content is preferably 0.5 to 6 atomic% with respect to the total metal components in the low-reflection film.
- the low reflection film is composed of one or more metals such as Al, Ti, Zr, V, W, Co and the like within a range not impairing the effects of the present invention, for example, all metals in the low reflection film. You may contain it with the content rate of 15 atomic% or less with respect to a component.
- the low reflection film preferably further contains oxygen in order to ensure low reflection performance.
- the oxygen content is preferably 5 to 65 atomic% with respect to all elements of the low reflection film.
- the content of the metal component of Ni or Mo is preferably 30 to 80 atomic% with respect to the elements of the entire low reflection film!
- the low reflection film may further contain nitrogen or carbon. By including nitrogen and carbon, the etching rate can be controlled.
- the nitrogen content is preferably 0.1 to 50 atomic% with respect to all elements of the low reflection film.
- the total content of oxygen and nitrogen is preferably 20 to 70 atomic% with respect to all elements of the low reflection film.
- the carbon content is preferably 0.1 to 15 atomic% with respect to all elements of the low reflection film.
- Oxygen can be added to the low-reflection film by adding oxygen gas or diacid-carbon gas to the sputtering gas, even when the sputtering method is used. Similarly, if nitrogen gas is added to the sputtering gas, nitrogen is added to the low reflection film, and if carbon dioxide or carbon monoxide is added, carbon and oxygen are added to the low reflection film.
- the low reflection film may be not only one layer but also two or more layers. Even if the low reflection film has two or more layers, each layer preferably has the above-described configuration.
- composition of the low reflection film is not limited to the case where the low reflection film is in the uppermost layer, but also in the uppermost layer. , Even if the above range is preferred.
- the thickness of the light shielding film is preferably 90 to 130 nm from the viewpoint of setting the OD value in the visible region to about 4.0.
- the thickness of the low-reflection film is 40 to 70 nm (when the low-reflection film is a single layer) or 5 to 60 nm (from the viewpoint of reducing the reflectance over the visible region to 3% or less (excluding the glass reflectance). (Thickness of one layer when the low-reflection film has two or more layers)
- the film for forming the blank of the present invention is preferably formed by a sputtering method from the viewpoint of durability and uniformity of film thickness.
- the light shielding film can be formed by sputtering using an Ni—Mo—Fe alloy target in an inert gas atmosphere or a mixed gas atmosphere of an inert gas and a nitrogen gas.
- the low reflection film can be formed by sputtering in an acidic gas atmosphere using a Ni—Mo—Fe alloy target. Therefore, in order to form the light shielding film and the low reflection film on the substrate, it can be achieved by continuously performing the above method.
- the acidic gas atmosphere includes at least one of O and CO, and Ar,
- Inert gases include He, Ne, A
- r and Kr gas force Group force One or more selected as the sputtering gas can be used as the sputtering gas.
- Ar gas is preferably used in terms of stable and inexpensive discharge.
- the sputtering pressure is suitably 0.1-2 Pa.
- the back pressure is preferably 1 ⁇ 10 _6 to 1 ⁇ 10 _2 Pa.
- the substrate temperature is preferably from room temperature to 300 ° C, particularly from room temperature to 200 ° C, from the viewpoint of durability and productivity.
- the Ni content in the Ni-Mo-Fe alloy target is 70 to 92 atomic%, particularly 70 to 90 atomic%, based on the total metal elements in the target.
- the Mo content is preferably 8 to 30 atomic%, particularly 12 to 22 atomic%, based on all metal elements in the target.
- the content of Fe is preferably 1 to 6 atomic% with respect to all metal elements in the target.
- the present invention also provides a black matrix that can be formed by patterning the blanks.
- the composition and configuration of the Brantas film as described above can be applied as they are to the composition and configuration of the film (light-shielding film 'low reflection film) in the black matrix.
- a photoresist is applied to the blanks, and the arrangement is performed.
- a line pattern is baked, and unnecessary portions of blanks such as a light shielding film and an antireflection film are removed with an etching solution in accordance with a photoresist pattern.
- the etchant include cerium ammonium nitrate, a mixture of perchloric acid and water, ammonium nitrate, a mixture of nitric acid and water, a mixture of phosphoric acid, nitric acid, acetic acid and water, and the like.
- the present invention also provides a color filter using the above black matrix.
- a color filter is manufactured by forming red, green, and blue color layers on a substrate on which a black matrix is formed, and then forming a transparent protective film and a transparent conductive film in this order. .
- the alkali-free glass substrate having a thickness of 7 mm After cleaning the alkali-free glass substrate having a thickness of 7 mm, it was set as a substrate in a sputtering apparatus.
- a low reflection film having a thickness of 50 nm was formed on a substrate by a direct current magnetron sputtering method using a Ni—Mo—Fe alloy target having an atomic percentage (%) of 79: 17: 4.
- the input power density was 3 W and 2.2 WZcm 2 .
- the substrate was heated.
- a light-shielding film having a thickness of lOnm is formed on the low-reflection film by a direct current magnetron sputtering method using a Ni—Mo—Fe alloy target having the composition shown in Table 1. Formed blanks.
- a mixed gas of Ar and nitrogen mixed at the ratio shown in Table 1 was used as the sputtering gas.
- the back pressure was 1.3 X 10 _3 Pa, the sputtering gas pressure was 0.3 Pa, and the input power density was 2. lWZcm 2 .
- the substrate was not heated.
- Example 1 The composition of the metal component of the light-shielding film in Example 1 was measured by ICP emission spectrometry. Ni: 86.2 atomic percent, Mo: 10.3 atomic percent, Fe: 3.5 atomic percent, Ta : 0 atomic%.
- the composition of the metal component of the light-shielding film in Example 4 was measured by ICP emission spectrometry. As a result, Ni: 86.7 atomic%, Mo: 9.9 atomic%, Fe: 3.4 atomic% Ta: 0 atomic%.
- the nitrogen content of the light shielding film in Example 4 was 4.1 atomic% as a result of measurement by the RBS analysis method and the NRA analysis method.
- Example 9 The composition of the metal component of the light-shielding film in Example 9 was determined by ICP emission spectrometry. As a result, Ni: 83.8 atomic%, Mo: 12.8 atomic%, Fe: 3.4 atomic% Ta: 0 atomic%. [0060] The low reflectivity, light shielding property, alkali resistance, heat resistance, water resistance, etching speed and patterning property of the light shielding film of the blanks were evaluated by the following methods. The results are shown in Table 2.
- Etching rate of light-shielding film A film having the same composition as the light-shielding film of the blanks was formed on a separately prepared alkali-free glass substrate under the same conditions.
- the substrate with the light-shielding film was immersed in an etching solution at 30 ° C in which 13% by mass of ceric nitrate ammonium, 3% by mass of perchloric acid and 84% by mass of water were mixed, and the light-shielding film disappeared.
- the etching rate of the light-shielding film was evaluated by measuring the time until this.
- ⁇ when the etching rate is InmZ seconds or more and 4 nmZ seconds or less, ⁇ , when 0.5 nmZ seconds or more and less than In mZ seconds, or more than 4 nmZ seconds and less than 6 nmZ seconds, ⁇ , less than 0.5 nmZ seconds, or The case of over 6nmZ seconds was evaluated as X. This evaluation also determined the point of productivity and strength. ⁇ or ⁇ is more practically preferred ⁇ is even more preferred Good.
- Patterning properties The formed blanks were etched using a photolithographic method using an etching solution in which 13% by mass of cerium nitrate nitrate, 3% by mass of perchloric acid and 84% by mass of water were mixed. Evaluated by performing puttering. Yes, when the formed pattern shows no erosion and the line thinning amount of the pattern is 2 ⁇ m or less, and when the pattern is not eroded and the line thinning amount of the pattern exceeds 2 ⁇ m 4 The case where it was less than ⁇ m was evaluated as ⁇ , and the case where the pattern was bitten or the line thinning force of the pattern exceeded ⁇ m was evaluated as X. It is more preferable that it is ⁇ or ⁇ that is practically preferable.
- Example 16 The composition of the metal component of the light-shielding film in Example 16 was measured by ICP emission spectrometry. Ni: 81.9 atomic%, Mo: 13.8 atomic%, Fe: 3.4 atomic%, Ta: 0.9 atomic percent.
- Example Target composition (atomic%) when forming a light shielding film Flow rate ratio (volume%)
- a photoresist is applied, a wiring pattern is baked, and unnecessary portions are removed with an etching solution to form a black matrix.
- a color filter is obtained by forming red, green, and blue color layers on a substrate on which the black matrix is formed by a photolithographic method, and further forming a transparent protective film and a transparent conductive film in this order.
- the above A color liquid crystal is formed from the color filter cover. It is confirmed that the color liquid crystal formed has improved display quality compared to the case of using the comparative example.
- the black matrix in the present invention is useful as a color liquid crystal because it does not contain Ta in the uppermost layer, so that durability such as water resistance and patterning properties are improved.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008513196A JPWO2007125875A1 (ja) | 2006-04-24 | 2007-04-23 | ブランクス、ブラックマトリクスおよびカラーフィルタ |
US12/257,771 US20090051860A1 (en) | 2006-04-24 | 2008-10-24 | Blank, black matrix, and color filter |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006119346 | 2006-04-24 | ||
JP2006-119346 | 2006-04-24 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/257,771 Continuation US20090051860A1 (en) | 2006-04-24 | 2008-10-24 | Blank, black matrix, and color filter |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007125875A1 true WO2007125875A1 (ja) | 2007-11-08 |
Family
ID=38655400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/058764 WO2007125875A1 (ja) | 2006-04-24 | 2007-04-23 | ブランクス、ブラックマトリクスおよびカラーフィルタ |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090051860A1 (ja) |
JP (1) | JPWO2007125875A1 (ja) |
KR (1) | KR20080111090A (ja) |
TW (1) | TW200745630A (ja) |
WO (1) | WO2007125875A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014153522A (ja) * | 2013-02-08 | 2014-08-25 | Sumitomo Metal Mining Co Ltd | 遮光フィルムとその製造方法、および、それを用いた絞り、シャッター羽根、光量調整絞り羽根 |
TWI711878B (zh) * | 2018-03-15 | 2020-12-01 | 日商大日本印刷股份有限公司 | 大型光罩 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI459050B (zh) * | 2009-12-01 | 2014-11-01 | Hon Hai Prec Ind Co Ltd | 彩色濾光片及彩色濾光片之製造方法 |
KR101084262B1 (ko) | 2009-12-15 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 액정 패널 및 그의 제조 방법 |
CN102337501A (zh) * | 2010-07-23 | 2012-02-01 | 鸿富锦精密工业(深圳)有限公司 | 真空镀膜件及其制备方法 |
EP2977202A1 (fr) * | 2014-07-25 | 2016-01-27 | AGC Glass Europe | Vitrage chauffant |
WO2016012325A1 (fr) * | 2014-07-25 | 2016-01-28 | Agc Glass Europe | Panneau de verre décoratif |
KR102514320B1 (ko) | 2015-12-24 | 2023-03-27 | 삼성디스플레이 주식회사 | 표시 장치 |
TWI678579B (zh) * | 2017-12-19 | 2019-12-01 | 友達光電股份有限公司 | 顯示面板以及顯示裝置 |
KR20210090309A (ko) | 2020-01-09 | 2021-07-20 | 삼성디스플레이 주식회사 | 블랙 매트릭스 조성물 및 이를 포함하는 표시 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10301499A (ja) * | 1997-04-22 | 1998-11-13 | Ulvac Seimaku Kk | ブランクス又はブラックマトリクス及びこれらの製造方法 |
JPH11119676A (ja) * | 1997-10-08 | 1999-04-30 | Ulvac Seimaku Kk | ブランクス及びブラックマトリクス |
JPH11142617A (ja) * | 1997-11-10 | 1999-05-28 | Dainippon Printing Co Ltd | ブラックマトリックス用ブランクスおよび液晶ディスプレイ用カラーフィルタ |
JP2005315991A (ja) * | 2004-04-27 | 2005-11-10 | Ulvac Seimaku Kk | ブランクス及びブラックマトリクス |
JP2006162942A (ja) * | 2004-12-07 | 2006-06-22 | Ulvac Seimaku Kk | ブランクス及びその形成方法、並びに該ブランクスを用いたブラックマトリックス及びその形成方法、 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3440346B2 (ja) * | 1994-12-22 | 2003-08-25 | 大日本印刷株式会社 | ブラックマトリックス用クロムブランクスおよび液晶デイスプレイ用カラーフイルター |
-
2007
- 2007-04-17 TW TW096113517A patent/TW200745630A/zh unknown
- 2007-04-23 WO PCT/JP2007/058764 patent/WO2007125875A1/ja active Application Filing
- 2007-04-23 KR KR1020087025880A patent/KR20080111090A/ko not_active Application Discontinuation
- 2007-04-23 JP JP2008513196A patent/JPWO2007125875A1/ja not_active Withdrawn
-
2008
- 2008-10-24 US US12/257,771 patent/US20090051860A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10301499A (ja) * | 1997-04-22 | 1998-11-13 | Ulvac Seimaku Kk | ブランクス又はブラックマトリクス及びこれらの製造方法 |
JPH11119676A (ja) * | 1997-10-08 | 1999-04-30 | Ulvac Seimaku Kk | ブランクス及びブラックマトリクス |
JPH11142617A (ja) * | 1997-11-10 | 1999-05-28 | Dainippon Printing Co Ltd | ブラックマトリックス用ブランクスおよび液晶ディスプレイ用カラーフィルタ |
JP2005315991A (ja) * | 2004-04-27 | 2005-11-10 | Ulvac Seimaku Kk | ブランクス及びブラックマトリクス |
JP2006162942A (ja) * | 2004-12-07 | 2006-06-22 | Ulvac Seimaku Kk | ブランクス及びその形成方法、並びに該ブランクスを用いたブラックマトリックス及びその形成方法、 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014153522A (ja) * | 2013-02-08 | 2014-08-25 | Sumitomo Metal Mining Co Ltd | 遮光フィルムとその製造方法、および、それを用いた絞り、シャッター羽根、光量調整絞り羽根 |
TWI711878B (zh) * | 2018-03-15 | 2020-12-01 | 日商大日本印刷股份有限公司 | 大型光罩 |
Also Published As
Publication number | Publication date |
---|---|
TW200745630A (en) | 2007-12-16 |
JPWO2007125875A1 (ja) | 2009-09-10 |
US20090051860A1 (en) | 2009-02-26 |
KR20080111090A (ko) | 2008-12-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2007125875A1 (ja) | ブランクス、ブラックマトリクスおよびカラーフィルタ | |
TW416012B (en) | Black mask, color filter and liquid crystal display | |
JP6324756B2 (ja) | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 | |
JP4848932B2 (ja) | プロキシミティ露光用階調マスク | |
CN102084275A (zh) | 线栅型偏振器及其制造方法 | |
JP2005084366A (ja) | 液晶表示素子製造用の露光マスク用ブランク及びその製造法並びに露光マスク | |
WO2016204018A1 (ja) | 表示装置向け低反射電極およびスパッタリングターゲット | |
WO2007010866A1 (ja) | グレートーンマスク用ブランクス、及びそれを用いたグレートーンマスク及びその製造方法 | |
JP2003029010A (ja) | 半透過ミラー付き基板及び半透過型液晶表示装置 | |
KR20030027806A (ko) | 액정 표시판용 대향 기판, 액정 표시판, 및 그 제조 방법 | |
JP4569016B2 (ja) | 液晶表示装置用ブラックマトリクスおよびカラーフィルタ | |
TWI785160B (zh) | 光罩基底及光罩之製造方法、以及顯示裝置之製造方法 | |
JP5164088B2 (ja) | マスクブランク及びフォトマスク | |
WO1997031290A1 (fr) | Substrat support de film avec facteur de reflexion bas | |
JP4807739B2 (ja) | マスクブランク及びフォトマスク | |
JP3305189B2 (ja) | カラー表示装置及び該カラー表示装置の製造方法 | |
JP4017747B2 (ja) | Bm膜製造方法 | |
JP4419036B2 (ja) | ブラックマトリックス用遮光膜を形成するためのスパッタリングターゲット | |
JP2000121825A (ja) | 遮光層付き基板、その製造方法並びにスパッタターゲット、カラーフィルタ基板、及び表示素子 | |
US20040180219A1 (en) | Low-reflective thin-film substrate | |
JPH1124058A (ja) | 遮光層付き基板及びその製造方法及びカラーフィルタ基板及び液晶表示素子 | |
JP2002167667A (ja) | ブラックマトリックス用遮光膜を形成するためのスパッタリングターゲットおよびそのスパッタリングターゲットを用いて形成した遮光膜 | |
KR20130052992A (ko) | 터치 패널 및 그의 제조방법 | |
JPH1152126A (ja) | 遮光層付き基板及びその製造方法及びカラーフィルタ基板及び液晶表示素子 | |
JP2000206314A (ja) | 遮光層付き基板、カラ―フィルタ基板、表示素子、遮光層付き基板を形成するためのタ―ゲット及び遮光層付き基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07742199 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008513196 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020087025880 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07742199 Country of ref document: EP Kind code of ref document: A1 |