WO2007101135A3 - High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles - Google Patents

High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles Download PDF

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Publication number
WO2007101135A3
WO2007101135A3 PCT/US2007/062763 US2007062763W WO2007101135A3 WO 2007101135 A3 WO2007101135 A3 WO 2007101135A3 US 2007062763 W US2007062763 W US 2007062763W WO 2007101135 A3 WO2007101135 A3 WO 2007101135A3
Authority
WO
WIPO (PCT)
Prior art keywords
particles
planar
inter
microflake
metallic
Prior art date
Application number
PCT/US2007/062763
Other languages
French (fr)
Other versions
WO2007101135A2 (en
Inventor
Duren Jeroen K J Van
Matthew R Robinson
Craig R Leidholm
Original Assignee
Duren Jeroen K J Van
Matthew R Robinson
Craig R Leidholm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/361,521 external-priority patent/US20070163383A1/en
Priority claimed from US11/362,266 external-priority patent/US20070169813A1/en
Priority claimed from US11/361,498 external-priority patent/US20070163639A1/en
Priority claimed from US11/361,688 external-priority patent/US20070169812A1/en
Priority claimed from US11/361,497 external-priority patent/US20070163638A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/395,426 external-priority patent/US20070163642A1/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Priority to EP07757445A priority Critical patent/EP1997149A2/en
Application filed by Duren Jeroen K J Van, Matthew R Robinson, Craig R Leidholm filed Critical Duren Jeroen K J Van
Priority to CN2007800145850A priority patent/CN101438416B/en
Priority to JP2008556570A priority patent/JP2009540537A/en
Publication of WO2007101135A2 publication Critical patent/WO2007101135A2/en
Publication of WO2007101135A3 publication Critical patent/WO2007101135A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a' high aspect ratio. The resulting dense film formed from microflakes is particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
PCT/US2007/062763 2006-02-23 2007-02-23 High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles WO2007101135A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008556570A JP2009540537A (en) 2006-02-23 2007-02-23 High throughput semiconductor precursor layer printing with intermetallic microflake particles
EP07757445A EP1997149A2 (en) 2006-02-23 2007-02-23 High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
CN2007800145850A CN101438416B (en) 2006-02-23 2007-02-23 High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles

Applications Claiming Priority (26)

Application Number Priority Date Filing Date Title
US11/361,688 US20070169812A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/361,497 US20070163638A1 (en) 2004-02-19 2006-02-23 Photovoltaic devices printed from nanostructured particles
US11/361,498 US20070163639A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,521 US20070163383A1 (en) 2004-02-19 2006-02-23 High-throughput printing of nanostructured semiconductor precursor layer
US11/361,522 2006-02-23
US11/361,498 2006-02-23
US11/362,266 US20070169813A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/361,497 2006-02-23
US11/361,688 2006-02-23
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/362,266 2006-02-23
US11/361,521 2006-02-23
US11/361,433 2006-02-23
US11/361,515 2006-02-23
US39619906A 2006-03-30 2006-03-30
US11/395,426 2006-03-30
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
US11/394,849 2006-03-30
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US11/395,426 US20070163642A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
US11/395,668 2006-03-30
US11/395,438 2006-03-30
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US11/396,199 2006-03-30

Publications (2)

Publication Number Publication Date
WO2007101135A2 WO2007101135A2 (en) 2007-09-07
WO2007101135A3 true WO2007101135A3 (en) 2008-02-07

Family

ID=38459765

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/062763 WO2007101135A2 (en) 2006-02-23 2007-02-23 High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles

Country Status (4)

Country Link
EP (1) EP1997149A2 (en)
JP (1) JP2009540537A (en)
CN (1) CN101438416B (en)
WO (1) WO2007101135A2 (en)

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FR2922046B1 (en) * 2007-10-05 2011-06-24 Saint Gobain IMPROVEMENTS ON ELEMENTS CAPABLE OF COLLECTING LIGHT
US8322300B2 (en) 2008-02-07 2012-12-04 Sunpower Corporation Edge coating apparatus with movable roller applicator for solar cell substrates
JP5383162B2 (en) * 2008-11-26 2014-01-08 京セラ株式会社 Thin film solar cell manufacturing method
JP5137794B2 (en) * 2008-11-26 2013-02-06 京セラ株式会社 Thin film solar cell manufacturing method
JP5317648B2 (en) * 2008-11-26 2013-10-16 京セラ株式会社 Thin film solar cell manufacturing method
JP2010129648A (en) * 2008-11-26 2010-06-10 Kyocera Corp Method of manufacturing thin-film solar cell
CN101931011A (en) * 2009-06-26 2010-12-29 安泰科技股份有限公司 Thin film solar cell as well as base band and preparation method thereof
JP2011138837A (en) * 2009-12-26 2011-07-14 Kyocera Corp Method of manufacturing semiconductor layer, and method of manufacturing photoelectric conversion device
CN101826574A (en) * 2010-02-10 2010-09-08 昆山正富机械工业有限公司 Method for making copper-indium-gallium-selenium light-absorbing layer under non-vacuum condition
CN101853885A (en) * 2010-02-10 2010-10-06 昆山正富机械工业有限公司 Manufacturing method of slurry of solar absorbing layer, slurry and absorbing layer
CN101820032A (en) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 Method for manufacturing light absorption layer by collocating CuInGaSe slurry under non-vacuum environment
CN101840957A (en) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 Preparation method for anti-vacuum manufacture of copper-indium-gallium-selenium slurry
CN101840958A (en) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 Antivacuum method for manufacturing copper indium gallium selenide sizing agent
JP5495849B2 (en) * 2010-02-25 2014-05-21 京セラ株式会社 Manufacturing method of semiconductor layer and manufacturing method of photoelectric conversion device
WO2011162865A2 (en) * 2010-06-23 2011-12-29 Applied Materials, Inc. A nucleation promotion layer formed on a substrate to enhance deposition of a transparent conductive layer
JP2012009546A (en) * 2010-06-23 2012-01-12 Hitachi Ltd Thin-film manufacturing method, thin-film fitted substrate, and thin-film manufacturing apparatus
CN102464912A (en) * 2010-11-19 2012-05-23 慧濠光电科技股份有限公司 Printing ink with nanocrystal grains with light adsorption function and manufacturing method thereof
US20130264526A1 (en) * 2010-12-03 2013-10-10 E I Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
JP5764016B2 (en) * 2011-09-07 2015-08-12 日東電工株式会社 CIGS film manufacturing method and CIGS solar cell manufacturing method using the same
JP5658112B2 (en) * 2011-09-15 2015-01-21 本田技研工業株式会社 Method for manufacturing chalcopyrite solar cell
KR20140126323A (en) * 2012-01-19 2014-10-30 누보선, 인크. Protective coatings for photovoltaic cells
DE102012214254A1 (en) * 2012-08-10 2014-05-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laser-based method and processing table for local contacting of a semiconductor device
CN104051569B (en) * 2013-03-12 2017-09-26 台湾积体电路制造股份有限公司 Thin-film solar cells and its manufacture method
KR101638470B1 (en) 2013-07-19 2016-07-11 주식회사 엘지화학 Ink Composition Comprising Metal Nano Particle for Preparation of Light Absorbing Layer and Manufacturing Method of Solar Cell Thin Film Using the Same
CN110240830B (en) * 2018-03-09 2022-10-18 国家纳米科学中心 Self-sintering conductive ink based on liquid metal particles, and preparation method and application thereof

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Also Published As

Publication number Publication date
WO2007101135A2 (en) 2007-09-07
JP2009540537A (en) 2009-11-19
EP1997149A2 (en) 2008-12-03
CN101438416A (en) 2009-05-20
CN101438416B (en) 2011-11-23

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