WO2007054111A1 - Capteur pour détecter un rayonnement électromagnétique - Google Patents

Capteur pour détecter un rayonnement électromagnétique Download PDF

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Publication number
WO2007054111A1
WO2007054111A1 PCT/EP2005/012056 EP2005012056W WO2007054111A1 WO 2007054111 A1 WO2007054111 A1 WO 2007054111A1 EP 2005012056 W EP2005012056 W EP 2005012056W WO 2007054111 A1 WO2007054111 A1 WO 2007054111A1
Authority
WO
WIPO (PCT)
Prior art keywords
sensor
layer
semiconductor layer
sensor according
membrane
Prior art date
Application number
PCT/EP2005/012056
Other languages
German (de)
English (en)
Inventor
Holger Vogt
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to PCT/EP2005/012056 priority Critical patent/WO2007054111A1/fr
Publication of WO2007054111A1 publication Critical patent/WO2007054111A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation

Definitions

  • the present invention relates to a sensor for detecting an electromagnetic radiation as it can be used for example for infrared sensors, night vision devices, infrared cameras or thermal imaging cameras.
  • Sensors for electromagnetic radiation can serve as a single sensor, as pixels for sensor lines or for 2D arrays. Areas of application are pixels for infrared sensors, image recorders for night vision devices, infrared cameras or thermal imaging cameras. Visible light and near infrared sensors have so far mainly been photonic sensors, for example photoresistors, photodiodes as pn or Schottky diodes. Sensors for long-wave infrared are predominantly thermal sensors, for example pyroelectric or resistance bolometers. Resistance bolometer pixels use metals or semiconductors such as Si, SiGe, metal oxides VOx or BST as temperature-dependent resistors.
  • a bolometer serves as an infrared sensor.
  • a thin layer is thermally insulated in the sensor.
  • the thin layer may be suspended as a membrane.
  • An infrared radiation to be detected by the infrared sensor is absorbed in this membrane. This increases the temperature of the membrane. If the membrane is made of a material with finite electrical resistance, it changes depending on the temperature increase and the temperature coefficient of the resistance. See: http://www-leti.cea.fr/commun/AR-2003/ T5-Photodetection / 25-J-LTissot.pdf.
  • the membrane may also be an insulator, for example made of silicon oxide or silicon nitride, on which a resistor is present as a further re thin layer was deposited.
  • insulating layers and an absorber layer are provided in addition to the resistive layer.
  • Bolometers can serve as individual sensors, but can also be constructed as rows or 2D arrays. Lines and arrays are typically produced today using microsystem technology in surface micromachining on a silicon substrate. This is often referred to as Mikrobolomete-r arrays.
  • a preferred wavelength of the infrared radiation to be detected is 8-14 ⁇ m.
  • Common resistance layers which can be used for bolometers are amorphous silicon a-Si as described in US 5,367,167 or vanadium oxide (VOx) as described in US 5,450,053. Both are semiconductor materials whose temperature coefficient is -2% to about -4% per degree K. The temperature dependence of the resistance is exponential. In metals, the coefficient is typically about one order of magnitude smaller and positive.
  • a variety of other materials can be used as resistance layers of a bolometer. These include metals such as Ti, Ni or semiconductors such as polysilicon, silicon germanium or metal oxides such as BST, YBCO and LaMnO 3 .
  • Fig. 4 shows a structure of a prior art infrared sensor as shown at http://www.leti.cea.fr/commun/AR-2003/T5-Photodetection/25-J-Tissot. pdf is shown.
  • the sensor comprises a membrane 400 having a support and an amorphous silicon resistor.
  • the membrane 400 forms a thermometer.
  • the membrane 400 is arranged in an electrically contact-like manner and spaced above a substrate 420 via two contacts 410.
  • P indicates a pixel pitch of the sensor.
  • the thickness of the membrane 400 is 0.1 ⁇ m, and the distance between the surface of the substrate 420 and the membrane 400 is 2.5 ⁇ m.
  • a current is conducted via one of the pads 410 into the resistive layer of the membrane 400 and flows laterally through the resistive layer from the input pad to the other contact 410, which acts as an output pad.
  • Fig. 5 shows another structure of a membrane of a sensor as described in http://www.infraredsolutions.com/html/technology/microbolometerF. shstml is described.
  • the sensor shown in FIG. 5 is configured to detect infrared radiation 150.
  • the sensor has a nitride-vanadium oxide membrane 500.
  • nitride acts as a carrier and vanadium oxide acts as a resistor.
  • Two electrical contacts 510 of the membrane 500 are designed as a tapered spacer. Again, a current is conducted into the membrane and flows laterally through the resistive layer from the input to the output pad.
  • the membrane 500 is disposed over a monolithic bipolar transistor 520. Further, in Fig.
  • two lines 541, 540 are shown, wherein the first line 541 of an X-metal and the second line 540 consists of a Y-metal. Via the lines 540, 541, the transistor 520 may be connected.
  • the membrane 500 is 0.5 ⁇ m thick and 50 ⁇ m long. Furthermore, the membrane 500 is arranged 2.5 ⁇ m above the transistor 520.
  • the present invention provides a sensor for detecting electromagnetic radiation having the following features:
  • a sensor membrane having a semiconductor layer of a doped organic semiconductor material, wherein an electrical resistance of the semiconductor layer is dependent on an incident electromagnetic radiation
  • the present invention is based on the recognition that organic semiconductor layers have properties which enable a substantial improvement of the sensors for detecting electromagnetic radiation according to the prior art.
  • An essential advantage of organic semiconductor layers is that new detector structures become possible.
  • a sensor membrane made of organic calf ⁇ conductor layers allows a potentially higher temperature sensitivity than with the previous used semiconductor layers is possible.
  • Another advantage of organic materials is that organic chemistry allows a virtually unlimited variety of combinations. The long-term stability of the organic layer is even better than with OLEDs, since the sensors are typically built in an evacuated housing due to the thermal insulation.
  • Organic semiconductor layers have developed in recent years to a quality that allows their use in microelectronics and microsystems technology. With increasing use in thin-film electronics TFTs and optoelectronics OLEDs, more and more material combinations will emerge, which are also suitable for use in bolometers.
  • the organic semiconductor layers can be produced from small molecules by vapor deposition or from polymers by spin-coating. Similarly, printing methods similar to inkjet printing are possible. Such organic semiconductor layers are highly pure.
  • organic semiconductor layer are long-term stable in OLEDs.
  • the resistance of the organic semiconductor layers can be adjusted by a suitable p-type or n-type doping.
  • M. Pfeiffer et al . “Doped organic semiconductors: Physics and application in light emitting diodes", Organic Electronics, Vol.
  • the doping of the organic semiconductor causes a drastic reduction of the resistance
  • the resistance of 10 10 ⁇ cm for pthalocyanine is reduced to 10 3 ⁇ cm after doping with 1% F4-TCNQ.
  • the organic semiconductor layers can be contacted with low resistance.
  • Such contacting can be done for example with ITO or aluminum.
  • Good components, such as diodes with ideal shaped characteristic, d. H. A large range of exponential current increases have already been made, as described in D. Gebeyehu, K. Walzer, G. He, M. Pfeiffer, K. Leo, J. Brandt, A. Gerhardt and H. Vestweber: "Highly Efficient Deepening". blue organic light emitting diodes with doped transport layers ", Synthetic Metals 148 (2), pages 205-211 (2005).
  • the semiconductor layer of the sensor membrane is arranged on a carrier layer.
  • the carrier layer may also be an organic material or, alternatively, a non-organic material.
  • a surface of the semiconductor layer ⁇ be covered by a protective layer, which may be an organic protective layer.
  • the carrier layer may consist, for example, of silicon nitride and / or silicon oxide. With suitable stability, the membrane can also consist exclusively of your organic semiconductor or the organic semiconductor with a protective layer.
  • the semiconductor layer is pentacene doped with iodine, as described in Takashi Minakata, Ichiro Nagoya, and Masaru Ozaki: "Highly ordered and conducting thin film of pentacene doped with iodine vapor", Journal of Applied Physics-15. 69, Issue 10, pp. 7,354-7,356 (1991), or from pthalocyanine doped with F4-TCNQ, as described in M. Pfeiffer et al.: Doped organic semiconductors: physics and ap- plication in light emitting diodes ", Organic Electronics, Vol. 4, pages 89-103 (2003).
  • the sensor membrane is arranged at a distance of ⁇ / 4 above a reflection layer and thus represents for an incident wave a very good absorber, adapted to the characteristic impedance of free space, as described in JD Kraus: "Electro - Magnetics ", MacGraw-Hill International Edition, pages 562-565 (1991), which is an infrared absorber
  • the preferred wavelength of the infrared radiation to be detected is 8-14 ⁇ m also be used to detect radiation with a larger and smaller wavelength.
  • the present invention is based on the use of organic semiconductors in bolometers and microbolometer arrays.
  • the sensor according to the invention for detecting an electromagnetic radiation can advantageously be used as a pixel for infrared sensor, image sensor for night vision devices, infrared cameras or thermal imaging cameras.
  • the organic carrier layers and protective layers consist for example of polyimide, parylene or BCB.
  • the organic semiconductor layer consists for example of doped pentacene, pthalocyanine or bathophenanthroline. Many other organic semiconductors are also available Available, as for example in the US pat. 6,812,638 B2 is described.
  • FIG. 1 is a schematic representation of a sensor according to an embodiment of the present invention RETg;
  • FIG. 2 shows a schematic representation of a sensor according to a further exemplary embodiment of the present invention
  • FIG. 3 shows a schematic representation of a sensor membrane according to an exemplary embodiment of the present invention
  • Fig. 5 is a structural view of a sensor according to the. State of the art.
  • Fig. 1 shows an embodiment of a sensor for detecting an electromagnetic radiation.
  • the sensor has a sensor membrane 100.
  • the sensor membrane 100 is a two-layered membrane consisting of a semiconductor chip 102 and a carrier layer 104.
  • the semiconductor layer 102 is connected to a substrate 120 via two contacts 110.
  • the sensor membrane 100 and in particular the semiconductor layer 102 is designed to detect an incident electromagnetic radiation 150.
  • the semiconductor layer 102 is constructed from a doped organic semiconductor material.
  • An electrical resistance of the doped organic semiconductor material of the semiconductor layer 102 is dependent on the incident radiation 150.
  • the electromagnetic radiation 150 may be, for example, an infrared radiation which is absorbed by the sensor membrane 100 and thereby increases the temperature of the sensor membrane 100.
  • the resistance of the semiconductor layer 102 changes. In this way, by measuring the resistance of the semiconductor layer 102, the incident electromagnetic radiation 150 can be deduced.
  • the resistance of the semiconductor layer 102 is measured via the contacts 110.
  • a current is conducted into the semiconductor layer 102 via a first of the two contacts 110 and, after it has flowed through the semiconductor layer 102, is led out again from the other of the two contacts 110.
  • the contacts 110 may be connected in the substrate 120 to a circuit (not shown in the figures) which is designed to detect and output the resistance of the semiconductor layer 102, for example via a voltage measurement or current measurement or the same across the resistance determined to infer incident electromagnetic radiation 150 and to indicate its value.
  • the substrate 120 forms a planar non-conductive background.
  • This substrate may for example consist of a layer of Siiiziumoxid, which lies directly on a bare silicon wafer.
  • the substrate 120 may also be a CMOS wafer that has a polished one having top oxide layer.
  • the CMOS wafer may have all the layers and structures necessary for a subsurface CMOS circuit.
  • the CMOS circuit can be, for example, a readout circuit for the bolometer resistor.
  • the contacts 110 are realized as contact plugs and spacers.
  • the contacts 110 consist for example of CVD tungsten and have a diameter of about 1 micron.
  • the contacts 110 contact a circuit located in the substrate 120 (not shown in the figures).
  • the circuit may be, for example, a sensor evaluation circuit.
  • the contacts 110 are disposed at opposite ends of the membrane 100. In this way, the contacts 110 are maximally spaced apart.
  • the contacts 110 form an electrical connection to the semiconductor layer 102.
  • the contacts 110 act as spacers
  • the membrane 100 is arranged at a predefined distance to a surface of the substrate 120.
  • the membrane 100 is arranged parallel to the surface of the substrate 120.
  • the contacts 110 in the form of the contact plugs pierce the carrier layer 104.
  • the carrier layer 104 may be a nitride layer with a thickness of 100 nanometers to 300 nanometers.
  • the carrier layer 104 serves for electrical and thermal insulation.
  • the carrier layer 104 is carrier of the actual semiconductor layer 102, which consists for example of pentacene or of pthalocyanine doped with F4-TCNQ. In this embodiment, the semiconductor layer 102 is about 50 to 250 nanometers thick.
  • the semiconductor layer 102 is electrically contacted by W plugs of the contacts 110.
  • the Membrane 100 has a distance to substrate 120 of approximately 0.5 to 3 ⁇ m. Due to the distance to the substrate 120, the membrane 100 is thermally insulated from the substrate 100.
  • FIG. 2 shows a schematic illustration of a further exemplary embodiment of a sensor for detecting an electromagnetic radiation.
  • the sensor has a membrane 100 with a semiconductor layer 102, which is arranged on a carrier layer 104. Via contacts 110, the membrane 100 is spaced from the substrate 120.
  • the sensor is again designed to detect an incident electromagnetic radiation 150.
  • the membrane 100 has an additional protective layer 206.
  • the membrane 100 is thus made up of three layers, the uppermost layer being the protective layer 206, the middle layer the semiconductor layer 102 and the lowermost layer the carrier layer 104.
  • the electromagnetic radiation 150 is incident on the top of the protective layer 206.
  • the carrier layer 104 is in turn disposed opposite to a surface 222 of the substrate 120.
  • the surface of the substrate 120 is formed by a reflection layer 222.
  • In the Refletechnischss- chicht 222 may be an aluminum reflector that is disposed on a silicon oxide layer of a silicon slice ⁇ .
  • the substrate 120 is formed by the silicon oxide film disposed on the silicon wafer.
  • the substrate may include a CMOS circuit. From Fig.
  • the reflector layer has deviations around the contacts 110 around interrup ⁇ so that between the contacts 110 and the substrate 120 are formed of aluminum terminals 224th
  • This aluminum connectors can be directly connected to the readout circuit ⁇ .
  • the reflection layer 222 made of aluminum, which lies on the oxide surface of the substrate 120, is about 200 nanometers thick.
  • the organic semiconductor layer 102 of the membrane 100 has an electrical resistance of 377 ⁇ / square.
  • the organic semiconductor layer 102 is about 2.5 microns above the reflective layer 222. This arrangement forms an infrared absorber.
  • the sheet resistance corresponds to that of the wave propagation in air, the reflection layer 222 is ⁇ / 4 away from the conductive layer and represents for the incident wave an adapted to the characteristic impedance of the free space absorber.
  • the membrane 100 consists of the carrier layer 104, which is formed as a nitride layer, thereon the organic semiconductor layer 102 and thereon the protective layer 206, which is formed as an organic protective layer.
  • the nitride layers may be replaced by a series of silicon oxide and silicon nitride layers.
  • the membrane can consist exclusively of the semiconducting organic material.
  • an additional absorber layer for example Pt black, can be applied to the sensor highly doped silicon.
  • FIG. 3 shows a plan view of a sensor membrane 100 with a doped organic semiconductor layer 102 and a carrier layer 104.
  • the membrane 100 consisting of oxide or nitride, has the organic semiconductor layer 102 as a resistor.
  • the resistor made of organic semiconductor is realized as a meander and on the membrane surface between see the contact plugs 110 are arranged.
  • the meandering design of the semiconductor layer 102 increases the resistance of the region of the organic semiconductor layer between the contacts 110.
  • amorphous silicon or silicon nitride plus vanadium oxide are replaced by a membrane of silicon nitride and / or silicon oxide as non-conductive Shin-, then a second layer of a doped organic semiconductor material HaIb-.
  • this membrane can also consist exclusively of the organic semiconductor.
  • layer sequences such as nitride-organic semiconductor-organic protective layer or organic carrier-organic semiconductor-organic protective layer are possible.
  • the organic carrier layers and protective layers consist for example of polyimide, parylene or BCB.
  • the organic semiconductor layer consists for example of doped pentacene, pthalocyanine or bathophenanthroline. Many other organic semiconductors are also available.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Capteur pour détecter un rayonnement électromagnétique comportant une membrane (100) de capteur avec une couche semi-conductrice (102) constituée d’un matériau organique semi-conducteur dopé, la résistance électrique de la couche semi-conductrice (102) dépendant du rayonnement électromagnétique (150) incidente. Le capteur comporte en outre un dispositif (110) pour détecter la résistance de la couche semi-conductrice (102).
PCT/EP2005/012056 2005-11-10 2005-11-10 Capteur pour détecter un rayonnement électromagnétique WO2007054111A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2005/012056 WO2007054111A1 (fr) 2005-11-10 2005-11-10 Capteur pour détecter un rayonnement électromagnétique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2005/012056 WO2007054111A1 (fr) 2005-11-10 2005-11-10 Capteur pour détecter un rayonnement électromagnétique

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WO2007054111A1 true WO2007054111A1 (fr) 2007-05-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008145353A1 (fr) 2007-05-29 2008-12-04 Pyreos Ltd. Dispositif à structure de membrane conçu pour détecter un rayonnement thermique, procédé de fabrication et utilisation du dispositif
US7683324B2 (en) * 2006-03-14 2010-03-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Bolometer

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BRISSOT J-J ET AL: "ORGANIC SEMICONDUCTOR BOLOMETRIC TARGET FOR INFRARED IMAGING TUBS", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. ED-20, no. 7, 1973, pages 613 - 620, XP009067627, ISSN: 0018-9383 *
PFEIFFER M ET AL: "Controlled p-doping of pigment layers by cosublimation: Basic mechanisms and implications for their use in organic photovoltaic cells", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 63, no. 1, June 2000 (2000-06-01), pages 83 - 99, XP004201249, ISSN: 0927-0248 *
TISSOT, J.L.: "Uncooled Thermal detectors for IR applications", INTERNET ARTICLE, 2003, XP002389921, Retrieved from the Internet <URL:http://www-leti.cea.fr/commun/AR-2003/T5-Photodetection/25-J-LTissot.pdf> *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7683324B2 (en) * 2006-03-14 2010-03-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Bolometer
WO2008145353A1 (fr) 2007-05-29 2008-12-04 Pyreos Ltd. Dispositif à structure de membrane conçu pour détecter un rayonnement thermique, procédé de fabrication et utilisation du dispositif
DE102007024902B4 (de) * 2007-05-29 2010-08-26 Pyreos Ltd. Vorrichtung mit Membranstuktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung
DE102007024902B8 (de) * 2007-05-29 2010-12-30 Pyreos Ltd. Vorrichtung mit Membranstruktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung
RU2468346C2 (ru) * 2007-05-29 2012-11-27 Пайриос Лтд. Устройство с мембранной конструкцией для обнаружения теплового излучения, способ его изготовления и использования
AU2008256413B2 (en) * 2007-05-29 2013-09-12 Pyreos Ltd. Device having a membrane structure for detecting thermal radiation, method of production and use of the device
US9279730B2 (en) 2007-05-29 2016-03-08 Pyreos, Ltd. Device having a membrane structure for detecting thermal radiation, and method for production thereof

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