WO2007046656A1 - Method of producing light emitting diode having vertical structure - Google Patents
Method of producing light emitting diode having vertical structure Download PDFInfo
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- WO2007046656A1 WO2007046656A1 PCT/KR2006/004279 KR2006004279W WO2007046656A1 WO 2007046656 A1 WO2007046656 A1 WO 2007046656A1 KR 2006004279 W KR2006004279 W KR 2006004279W WO 2007046656 A1 WO2007046656 A1 WO 2007046656A1
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- Prior art keywords
- substrate
- etching
- luminous structure
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- luminous
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Definitions
- the present invention relates to a light emitting diode (LED) and a method for producing the LED. More particularly, the present invention relates to an improved method for producing an LED having vertical structure, and an LED produced using the method.
- LED light emitting diode
- a light emitting diode is a generally known semiconductor device that converts electric currents to light, by the combination of electrons with holes. Color of the light emitted from the LED depends on the semiconductor materials used in the LED because wavelength of the emitted light is determined by a band gap which refers to energy difference between electrons in the valence band and electrons in the conduction band. To be more specific, photons with low-energy and long- wavelength are generated from a smaller band gap, and photons with high-energy and short- wavelength from a larger band gap.
- FIG. 1 is a sectional view showing an example of a conventional LED having horizontal structure. More specifically, the LED of FIG. 1 is a GaN LED 100 having horizontal structure.
- the GaN LED 100 comprises a sapphire substrate 110 and a GaN luminous structure 150 formed on the sapphire substrate 110.
- the GaN luminous structure 150 is constructed by successive lamination of an n- type GaN clad layer 152, an active layer 154 having a Multi-Quantum Well structure, and a p-type GaN clad layer 156. Growth of the luminous structure 150 is achieved by generally-known processings such as Metal Organic Chemical Vapor Deposition (MOCVD), Liquid-Phase Epitaxy (LPE), and Molecule Beam Epitaxy (MBE). Therefore, the luminous structure 150 is also referred to as an epitaxial layer.
- a buffer layer (not shown) comprising AlN/GaN may be further provided to improve lattice matching between the sapphire substrate 110 and the luminous structure 150, before the growth of the n-type GaN clad layer 152.
- Predetermined areas of the p-type GaN clad layer 156 and the active layer 154 are dry-etched, so that an upper surface of the n-type GaN clad layer 152 is partly exposed. Then, an n-type electrode 190 and a p-type electrode 170 are formed on the exposed areas.
- a transparent electrode 160 may be formed on the p-type GaN clad layer 156 before forming the p-type electrode 170, so that a current injection area can be increased without deteriorating luminance of the LED.
- the above- structured GaN LED 100 uses the sapphire substrate 110 which is an insulant, however, the electric current flow from the n-type electrode 190 to the p- type electrode 170 through the active layer 154 should be formed narrow in a horizontal direction. Such narrow electric current flow increases forward voltage of the GaN LED 100, thereby deteriorating current efficiency. Furthermore, the insulant barely discharges static electricity induced from the outside, and thus increases defect rate of the device due to the static electricity.
- n-type electrode 190 In order to form the n-type electrode 190, a part of the active layer 154 not less than the area of the n-type electrode 190 needs to be partially removed. As a luminous area is decreased, the luminous efficiency corresponding to the ratio of the luminance to the element size is deteriorated. Furthermore, productivity of chips per wafer is restricted because it is hard to reduce a chip size of the LED 100 due to the formation of both the n-type electrode 190 and the p-type electrode 170 on the upper part of the LED 100.
- FIG. 2 is a sectional view of an exemplary LED having vertical structure, for overcoming demerits of the horizontally structured conventional LED.
- a GaN LED 200 having vertical structure comprises a luminous structure
- the vertically structured LED 200 utilizes a conductive substrate such as a silicon substrate 220 as a receptor substrate for the epitaxial layer 250, so that upper and lower parts thereof electrically communicate with each other.
- a conductive substrate such as a silicon substrate 220 as a receptor substrate for the epitaxial layer 250
- the heat discharge efficiency of the LED 200 can be improved.
- the forward voltage can be reduced since the electric current flows through a wider area than in the horizontally structured LED.
- static electricity problem is effectively prevented from being generated, and high output of LED 200 is obtainable by applying high current thereto.
- the process for forming the transparent electrode is not required since current density distribution is improved highly enough. Also, the sapphire substrate which is firm can be omitted, thereby simplifying the process of cutting the structure by the unit device. Unlike the horizontally structured LED, partial etching of the active layer is not required, thereby enhancing luminance by securing a wider luminous area. Production of chips per wafer can also be increased by reducing the chip size of the unit LED.
- FIG. 3 through FIG. 9 show steps of the conventional process for fabricating the
- an epitaxial layer that is, a luminous structure 350 of GaN single crystal layers is formed on a sapphire substrate 310 which is used as a sacrificial layer.
- the luminous structure 350 is separated into the size of unit LED.
- a conductive substrate 320 such as a silicon substrate is bonded to an upper surface of the luminous structure 350 being separated, using a conductive adhesive layer 340.
- the sapphire substrate 310 is removed. As shown in
- a laser beam may be used in separating the sapphire substrate 310 from the luminous structure 350.
- mechanical polishing, wet-etching, or dry- etching may be used for removal of the sapphire substrate 310 as shown in FIG. 7.
- electrodes 370 and 390 are formed on opposite sides of the resultant structure, respectively.
- the resultant structure is cut by the unit LED size, that is, the size of the separated luminous structure 350, to obtain a final form of the LED having vertical structure.
- the sapphire substrate 310 should be replaced by the conductive substrate 320 since an insulant such as the sapphire substrate 310 is inappropriate as a receptor substrate for an LED.
- the laser beam being projected moves within a certain small area determined by size and shape of a focus of the laser beam, rather than being simultaneously projected onto the whole surface of the wafer on which a plurality of the luminous structures 350 are formed. This causes great stress on the boundary of the laser-projected area.
- the epitaxial layer 350 is degraded due to the stress, surface defection and the pinholes. As a consequence, the whole performance as well as the luminous efficiency of the LED should be deteriorated.
- the present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a fabricating method for a light emitting diode (LED) having vertical structure, capable of effectively removing a sapphire substrate 310 and minimizing deterioration of an epitaxial layer 350, and an improved LED having vertical structure fabricated by the method. More particularly, it is an object of the present invention to provide a removal process for a sapphire substrate 310 after bonding the sapphire substrate 310 and the conductive receptor substrate 320, in fabricating the LED having vertical structure, without deteriorating the epitaxial layer 350.
- LED light emitting diode
- a method for fabricating light emitting diodes (LEDs) having vertical structure comprising steps of forming a luminous structure on a device substrate; providing a receptor substrate; bonding the luminous structure to the receptor substrate; reducing thickness of the device substrate; generating unit devices by etching the structure on the receptor substrate, the structure comprising the device substrate and the luminous structure; and removing the remaining respective device substrates from the respective unit devices by projecting a laser beam.
- LEDs light emitting diodes
- a method for fabricating LEDs having vertical structure comprising steps of forming a luminous structure on a device substrate; forming a reflection layer on the luminous structure; forming an adhesive layer on the reflection layer; etching the luminous structure, the reflection layer, and the adhesive layer formed on the device substrate by the unit device size; providing a receptor substrate; bonding the luminous structure to the receptor substrate using the adhesive layer; reducing thickness of the receptor substrate; forming electrodes on both surfaces of the receptor substrate; and separating the receptor substrate into the unit device size.
- a method for fabricating LEDs having vertical structure comprising steps of forming a luminous structure on a device substrate; separating the structure formed on the device substrate including the luminous structure by etching by the unit device size; providing a conductive receptor substrate having a pattern for separating the respective devices formed by predetermined depth; bonding the luminous structure to the conductive receptor substrate; reducing thickness of the device substrate; separating the device substrate from the luminous structure using a laser beam; forming an electrode on the luminous structure being separated by the unit device size; fixing the unit devices using a fixing means; exposing the pattern by processing a back surface of the conductive receptor substrate; forming another electrode on the back surface of the conductive receptor substrate; and separating the unit devices from the fixing means.
- the removal of the sapphire substrate is performed in two steps.
- One is mechanical polishing or etching and the other is laser beam projection.
- the sapphire substrate is processed into a thin layer by the polishing or etching, so that the epitaxial layer can be avoided from directly contacting with etching solution. Consequently, increase of roughness and generation of pinholes on a surface of the epitaxial layer can be prevented.
- the sapphire substrate can be separated without stressing and damaging the LEDs.
- the sapphire substrate being separated is thinner than in a conventional laser processing. Therefore, the stress generated by the laser beam during the separation is reduced, thereby restraining deterioration of the epitaxial layer.
- the method for removing a sapphire substrate according to the present invention can be adopted not only by the LED fabricating process of the present invention, but also by other various fabricating processes such as a laser diode fabricating process, which include a step of separating an insulant substrate, for example, the sapphire substrate from an epitaxial layer.
- FIG. 1 is a sectional view of a conventional light emitting diode (LED) having horizontal structure
- FIG. 2 is a sectional view of a conventional LED having vertical structure
- FIG. 3 through FIG. 9 show respective steps of the fabricating process for the conventional LED having vertical structure
- FIG. 10 through FIG. 24 show respective steps of the fabricating process for an
- FIG. 25 through FIG. 32 show respective steps of the fabricating process for an
- FIG. 33 through FIG. 43 show respective steps of the fabricating process for an
- FIG. 10 through FIG. 24 show respective steps of the fabricating process for an
- LED having vertical structure according to a first embodiment of the present invention.
- a luminous structure 420 is formed on a device substrate 410, for example, a sapphire substrate 410.
- the device substrate 410 is also referred to as a sacrificial substrate or a growth substrate for the luminous structure 420.
- An n-type GaN clad layer, an active layer, and a p-type GaN clad layer are successively formed by epitaxial growth, thereby constructing an epitaxial layer , that is, the GaN luminous structure 420.
- the step for forming the luminous structure 420 can be omitted from the LED fabricating process.
- an optional buffer layer (not shown) comprising AlN/GaN can be provided.
- a reflection layer 430 can be optionally formed to reflect light discharged from the active layer in the GaN luminous structure 420.
- the reflection layer 430 may comprise Ni, Al, Ag, Au, Pt, or an alloy of the aforementioned materials.
- Other various materials generally used for a reflection layer in the art can also be adopted for the reflection layer 430.
- luminance can be somewhat improved without forming the reflection layer 430 because a first conductive adhesive layer 442 in the present invention usually comprises metal or alloy having relatively high reflectivity.
- the first conductive adhesive layer 442 is formed to facilitate bonding between a device substrate and the receptor substrate such as a silicon substrate.
- the receptor substrate is also referred to as a host substrate in the art.
- the silicon substrate is generally used in the LED having vertical structure. However, except an insulant such as sapphire, other materials such as Ge, SiC, ZnO, diamond, and GaAs may be adopted.
- the first conductive adhesive layer 442 may be formed of an adhesive pad which is a conductive material having adhesive property.
- a metal adhesive using Au is adequate as the conductive material, while other materials such as Au-Sn, Sn, In, Au- Ag, Ag-Ge, Ag-Cu, and Pb-Sn may be used.
- the second adhesive layer 444 formed on the receptor substrate 450 and the first adhesive layer 442 formed on the device substrate 410 are formed of the same material and in the same form.
- FIG. 10 and FIG. 11 can be exchanged and even simultaneously performed.
- the device substrate 410 and the receptor substrate 450 are bonded to each other using a single adhesive layer, one of steps for forming the first adhesive layer 442 and forming the second adhesive layer 444 can be omitted.
- the device substrate 410 and the receptor substrate 450 are bonded to each other using thermo-compression, in a manner that the first adhesive layer 442 and the second adhesive layer 444 face each other.
- the two adhesive layers 442 and 444 are combined into a substantially single adhesive layer 440.
- the device substrate 410 such as the sapphire substrate 410 is processed into tens of D, preferably, less than 50D in thickness by polishing, etching or combination thereof.
- polishing etching or combination thereof.
- CMP Chemical Mechanical Polishing
- dry-etching using Reactive Ion Etching (RIE) or Induced Coupled Plasma/RIE (ICP/RIE) may be adopted when performing the etching.
- wet-etching may be performed, using hydrochloric acid, nitric acid, potassium hydroxide, sodium hydroxide, sulfuric acid, phosphoric acid or mixed liquid of the aforementioned etchants as the etching solution.
- LEDs through photo-etching using an oxide film as a mask.
- a material capable of resisting the etching and serving as a mask such as an oxide film 460 and a nitride film, is deposited on the sapphire substrate 410 and a photoresist 470 is deposited thereon.
- the photoresist 470 is patterned by the unit device size.
- the oxide film 460 is patterned by etching.
- the photoresist 470 is removed.
- the sapphire substrate 410 and the epitaxial layer 420 are patterned by dry-etching or wet-etching, using the oxide film 460 as a mask.
- the reflection layer 430 and the adhesive layer 440 are etched in the step of FIG. 19.
- the oxide film 460 is removed by dry-etching or wet-etching in the step of FIG. 20.
- the sapphire substrate 410 is removed using a laser beam.
- the sapphire substrate 410 can be removed by the unit device size without inducing any stress and damage to the epitaxial layer 420 of the LED.
- the laser beam is projected onto a plurality of the unit devices simultaneously.
- a boundary of the laser beam is controlled to be disposed between the boundaries of the respective unit devices, so that the unit devices are minimally stressed.
- an n-type electrode 480 is formed on the LED.
- FIG. 23 a silicon substrate 450 is polished into a thin layer, and a p-type electrode 490 is deposited on the polished silicon substrate 450. Finally, in the step of FIG. 24, the silicon substrate 450 is cut by the unit device size.
- FIG. 25 through FIG. 32 show respective steps for fabricating an LED having vertical structure according to a second embodiment of the present invention.
- a luminous structure 520, an optional buffer layer (not shown), an optional reflection layer 530, and a first conductive adhesive layer 542 are successively formed on a device substrate 510 such as a sapphire substrate.
- a ready-made substrate having the above luminous structure thereon may be provided.
- the epitaxially grown luminous structure 520, the reflection layer 530, and the first conductive adhesive layer 542 are separated into unit LEDs through photo-etching process.
- a second adhesive layer 544 is formed on an upper part of a receptor substrate 550 comprising a silicon single crystal.
- the two substrates 510 and 550 are bonded to each other using thermo-compression in a manner that the first adhesive layer 542 and the second adhesive layer 544 face each other.
- the device substrate 510 and the receptor substrate 550 are bonded using a single adhesive layer, one of steps for forming the first adhesive layer 542 and forming the second adhesive layer 544 can be omitted.
- the other adhesive layer may be omitted. However, both layers cannot be omitted at the same time
- the device substrate 510 such as the sapphire substrate
- the sapphire substrate 510 is processed into tens of D, preferably, less than 50D in thickness by polishing and etching.
- the sapphire substrate 510 is removed using a laser beam. Since having already been processed thin through polishing and etching, the sapphire layer 510 can be clearly removed by the unit device size without stressing and damaging the LED device including the luminous structure 520, that is, an epitaxial layer.
- the adhesive layers 542 and 544 are removed using wet-etching, for example.
- the receptor substrate 550 such as a silicon substrate is polished into a thin layer, and electrodes 580 and 590 are formed on the upper surface and the lower surface of the LED, respectively.
- the receptor substrate 550 whereon the electrode 590 is formed is cut by the unit device size.
- FIG. 33 through FIG. 40 show respective steps of the fabricating process for an
- a patterning step is further included, for patterning a silicon substrate to facilely separate the LED structure into unit devices.
- a luminous structure 620, an optional buffer layer (not shown), an optional reflection layer 630, and a first conductive adhesive layer 642 are formed on an upper part of a device substrate 610 such as a sapphire substrate. As in the previous embodiments, this step can be omitted by providing a ready-made substrate having the above structure thereon.
- the luminous structure 620, the reflection layer 630, and the first conductive adhesive layer 642 are separated into unit LEDs through photo-etching process.
- the receptor substrate 650 comprising a silicon single crystal is etched to form patterns for separating the respective devices by a predetermined depth using dry- etching as shown in FIG. 35.
- a second conductive adhesive layer 644 can be formed on the receptor substrate 650 whereon the patterns are formed.
- the two substrates 610 and 650 are bonded to each other using thermo- compression, in a manner that the first adhesive layer 642 and the second adhesive layer 644 face each other.
- the device substrate 610 such as the sapphire substrate 610 is processed into tens of D, preferably, less than 50D in thickness by polishing and etching.
- the sapphire substrate 610 is removed by a laser beam.
- an electrode 680 is formed on the luminous structure 620.
- a fixative tape 670 for example, an ultraviolet (UV) tape or a dicing tape is applied to fix the LED devices.
- the patterns for separating the devices are gradually exposed, and the structure on the receptor substrate 650 is clearly separated as shown in FIG. 41.
- another electrode 690 is formed on the receptor substrate 650 being exposed.
- the unit LED devices are separated from the fixative tape 680.
- the present invention is applicable to various fields of semiconductor device fabrication accompanied by a process of separating a device substrate, that is, a sacrificial substrate such as a sapphire substrate from an epitaxial layer.
- a device substrate that is, a sacrificial substrate such as a sapphire substrate from an epitaxial layer.
- the present invention can be applied to fabrication of a light emitting diode (LED) and a laser diode.
- LED light emitting diode
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020050099389A KR100752348B1 (ko) | 2005-10-20 | 2005-10-20 | 수직 구조 발광 다이오드 제조 방법 |
KR10-2005-0099389 | 2005-10-20 |
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WO2007046656A1 true WO2007046656A1 (en) | 2007-04-26 |
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PCT/KR2006/004279 WO2007046656A1 (en) | 2005-10-20 | 2006-10-20 | Method of producing light emitting diode having vertical structure |
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WO (1) | WO2007046656A1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103714754A (zh) * | 2012-10-03 | 2014-04-09 | 株式会社日本显示器 | 显示装置的制造方法 |
EP2430652A4 (en) * | 2009-05-12 | 2015-03-04 | Trustees Of The Universityof Illinois Board Of | MICROSCOPIC ULTRAMINOUS INORGANIC ELECTROLUMINESCENT DIODE ASSEMBLIES FOR DEFORMABLE AND SEMI-TRANSPARENT DISPLAY DEVICES |
WO2015077612A1 (en) * | 2013-11-22 | 2015-05-28 | Glo Ab | Method of stress induced cleaving of semiconductor devices |
US9765934B2 (en) | 2011-05-16 | 2017-09-19 | The Board Of Trustees Of The University Of Illinois | Thermally managed LED arrays assembled by printing |
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US20030189212A1 (en) * | 2002-04-09 | 2003-10-09 | Yoo Myung Cheol | Method of fabricating vertical devices using a metal support film |
KR20040058479A (ko) * | 2002-12-27 | 2004-07-05 | 삼성전기주식회사 | 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법 |
KR20040098213A (ko) * | 2003-05-14 | 2004-11-20 | 삼성엔지니어링 주식회사 | 유류 분해능을 갖는 슈도모나스 속 미생물 및 상기미생물을 이용한 유류 오염 물질의 처리 방법 |
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US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
KR100629210B1 (ko) * | 2004-04-06 | 2006-09-27 | 주식회사 이츠웰 | 수직형 발광 다이오드 및 그 제조 방법 |
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2005
- 2005-10-20 KR KR1020050099389A patent/KR100752348B1/ko not_active IP Right Cessation
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2006
- 2006-10-20 WO PCT/KR2006/004279 patent/WO2007046656A1/en active Application Filing
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US20030189212A1 (en) * | 2002-04-09 | 2003-10-09 | Yoo Myung Cheol | Method of fabricating vertical devices using a metal support film |
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KR20040104232A (ko) * | 2003-06-03 | 2004-12-10 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드의 제조방법 |
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