WO2007017984A1 - 光電子増倍管 - Google Patents
光電子増倍管 Download PDFInfo
- Publication number
- WO2007017984A1 WO2007017984A1 PCT/JP2006/311009 JP2006311009W WO2007017984A1 WO 2007017984 A1 WO2007017984 A1 WO 2007017984A1 JP 2006311009 W JP2006311009 W JP 2006311009W WO 2007017984 A1 WO2007017984 A1 WO 2007017984A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- envelope
- anode
- electron
- photomultiplier tube
- photocathode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
Definitions
- the present invention relates to a photomultiplier tube having an electron multiplier for cascading multiplication of photoelectrons generated by a photocathode.
- a photomultiplier tube (PMT) is known as an optical sensor.
- the photomultiplier tube includes a photocathode that converts light into electrons, a focusing electrode, an electron multiplier, and an anode, and these are housed in a vacuum vessel.
- photoelectrons are emitted into the photocathode force vacuum vessel.
- the photoelectrons are guided to the electron multiplier by the focusing electrode, and are cascade-multiplied by the electron multiplier.
- the anode outputs the reached electron among the multiplied electrons as a signal (see, for example, Patent Document 1 and Patent Document 2 below).
- Patent Document 1 Japanese Patent No. 3078905
- Patent Document 2 JP-A-4-359855
- the present invention has been made in order to solve the above-described problems, and an object thereof is to provide a photomultiplier tube having a fine structure capable of obtaining higher detection accuracy! Speak.
- a photomultiplier tube is an optical sensor having an electron multiplier for cascading multiplication of photoelectrons generated by a photocathode, and the light incident direction depends on the arrangement position of the photocathode.
- the electron multiplying portion has a plurality of grooves each serving as an electron multiplying channel
- the photomultiplier tube includes a plurality of anodes corresponding to the plurality of grooves (electron multiplying channels). It is a multi-anode type photomultiplier tube.
- the photomultiplier tube includes an envelope in which the inside of the photomultiplier tube is maintained in a vacuum state, a photoelectric surface housed in the envelope, and a housing in the envelope. And an anode at least partially housed in the envelope.
- the envelope is composed of a lower frame having a glass material force, a side wall frame in which an electron multiplier and an anode are physically etched, and an upper frame also having a glass material or silicon material force.
- the electron multiplying portion has a plurality of groove portions or a plurality of through holes extending along the traveling direction of electrons.
- Each groove is defined by a pair of walls finely processed by an etching technique, and secondary electrons for cascading and multiplying photoelectrons from the photocathode on each surface of the pair of walls defining the groove.
- An emission surface is formed and functions as one electron multiplication channel.
- each through hole is also defined by a wall finely processed by an etching technique, and the surface of the wall defining the through hole has a secondary electron emission surface for cascading multiplication of photoelectrons from the photocathode. Is formed and functions as one electron multiplier channel.
- the anode is provided corresponding to each of a plurality of grooves provided in the electron multiplier, and at least a part of the pair defines a corresponding groove. Consists of a plurality of channel electrodes arranged in a space sandwiched between walls Has been.
- the electron multiplier channel has a plurality of through-holes provided in the electron multiplier section
- the anode is provided corresponding to each of the plurality of through-holes provided in the electron multiplier section, and at least the A plurality of channel electrode forces arranged in a space partially sandwiched by walls defining the corresponding through hole are also configured. Even in the misalignment configuration, each channel electrode functions as an anode assigned to any one of the electron multiplication channels.
- an anode is composed of a plurality of channel electrodes, and a part of each of the channel electrodes is arranged in a groove or a through hole.
- the secondary electrons multiplied in each groove or the secondary electrons multiplied in each through hole surely reach the corresponding channel electrode (between the electron multiplying channels). ), And higher detection accuracy can be obtained.
- each channel electrode constituting the anode is supported by the main body portion in a state in which the main body portion is fixed to a part of the envelope and the protruding portion is separated from the envelope by a predetermined distance.
- U which preferably has a structure.
- each channel electrode constituting the anode preferably has a silicon force as a material that can be easily finely processed.
- each of the plurality of channel electrodes constituting the anode provided corresponding to the plurality of grooves or through holes corresponding to the electron multiplying channels Since a part is arranged in a state of being inserted into the corresponding groove or through hole, crosstalk between channels is effectively reduced, and as a result, high detection accuracy can be obtained.
- FIG. 1 is a perspective view showing a configuration of an embodiment of a photomultiplier tube according to the present invention.
- FIG. 2 is an assembly process diagram of the photomultiplier tube shown in FIG.
- FIG. 3 is a cross-sectional view showing the structure of the photomultiplier tube along the line I I in FIG.
- FIG. 4 is a perspective view showing the structure of the electron multiplier section in the photomultiplier tube shown in FIG.
- FIG. 5 is a diagram for explaining an effective positional relationship between the groove and the anode in the electron multiplier.
- FIG. 6 is a diagram for explaining a manufacturing process of the photomultiplier tube shown in FIG.
- FIG. 7 is a diagram for explaining a manufacturing process of the photomultiplier tube shown in FIG. 1 (part 2).
- FIG. 8 is a view showing a structure of a second embodiment of the photomultiplier according to the present invention.
- FIG. 9 is a diagram showing a configuration of a detection module to which the photomultiplier tube according to the present invention is applied.
- FIG. 1 is a perspective view showing the structure of an embodiment of a photomultiplier tube according to the present invention.
- the photomultiplier tube la shown in FIG. 1 is a photomultiplier tube having a transmissive photocathode, and includes an upper frame 2 (glass substrate), a side wall frame 3 (silicon substrate), and a lower frame. 4 Provided with an envelope composed of (glass substrate).
- this photomultiplier tube la when the incident direction of light on the photocathode intersects the traveling direction of electrons in the electron multiplier, that is, when light is incident from the direction indicated by arrow A in FIG.
- the photoelectrons emitted from the photocathode are incident on the electron multiplier, and the photoelectrons travel in the direction indicated by the arrow B, whereby secondary electrons are cascade-multiplied for each electron multiplier channel.
- It is a multi-anode type photomultiplier tube that detects signals with the anode corresponding to each channel.
- FIG. 2 is a perspective view showing the photomultiplier tube la shown in FIG. 1 in an exploded manner into an upper frame 2, a side wall frame 3, and a lower frame 4.
- the upper frame 2 is configured with a rectangular flat glass substrate 20 as a base material.
- a rectangular recess 201 is formed on the main surface 20 a of the glass substrate 20, and the outer periphery of the recess 201 is formed along the outer periphery of the glass substrate 20.
- a photocathode 22 is formed at the bottom of the recess 201. This photocathode 22 is formed in the vicinity of one end in the longitudinal direction of the recess 201.
- a hole 202 is provided in a surface 20 b facing the main surface 20 a of the glass substrate 20, and the hole 202 reaches the photocathode 22.
- a photocathode terminal 21 is disposed in the hole 202, and the photocathode terminal 21 is in electrical contact with the photocathode 22.
- the upper frame 2 itself made of a glass material functions as a transmission window.
- the side wall frame 3 is configured using a rectangular flat plate-like silicon substrate 30 as a base material. Concave portion 301 and penetrating portion 302 are formed by directing force from main surface 30a of silicon substrate 30 to surface 30b facing it.
- the recess 301 and the through portion 302 both have a rectangular opening, and the recess 301 and the through portion 302 are connected to each other, and the outer periphery thereof is the outer periphery of the silicon substrate 30. Formed along with!
- an electron multiplier 31 is formed in the recess 301.
- the electron multiplying portion 31 has a plurality of wall portions 311 erected from the bottom portion 301a of the recess 301 so as to be along each other.
- a groove is formed as an electron multiplying channel between the walls 311.
- a secondary electron emission surface serving as a secondary electron emission material force is formed on the side wall (side wall defining each groove) and the bottom 301a of the wall 311.
- the wall 311 is provided along the longitudinal direction of the recess 301, and one end thereof is disposed at a predetermined distance from one end of the recess 301, and the other end is disposed at a position facing the penetrating portion 302.
- An anode 32 is disposed in the through portion 302.
- a groove between part 311 is also available.
- the anode 32 includes a plurality of channel electrodes 320 provided corresponding to the groove portions, respectively.
- each of the channel electrodes 320 is arranged with a space between the inner wall of the penetrating portion 302 and the main body portion is formed on the lower frame 4.
- a sealing material such as a low melting point metal (for example, indium) (hereinafter simply referred to as bonding).
- bonding a sealing material such as a low melting point metal (for example, indium) (hereinafter simply referred to as bonding).
- bonding a low melting point metal (for example, indium) (hereinafter simply referred to as bonding).
- bonding a sealing material such as a low melting point metal (for example, indium) (hereinafter simply referred to as bonding).
- each of the channel electrodes 320 has a projection part of which is inserted into a space defined by the wall 311 that defines the groove, and the projection is separated from the lower frame 4 by a predetermined distance. It is supported by the body part.
- the lower frame 4 is configured with a rectangular flat glass substrate 40 as a base material.
- a screen 401, a screen 402, and a screen 403 are provided respectively for the main surface 40a of the glass substrate 40 and the surface 40b facing the main surface 40a.
- the photocathode side terminal 41 is inserted and fixed in the hole 401, the anode terminal 42 is inserted in the hole 402, and the anode side terminal 43 is inserted and fixed in the hole 403.
- the anode terminal 42 is in electrical contact with the anode 32 of the sidewall frame 3.
- FIG. 3 is a cross-sectional view showing the structure of the photomultiplier tube la along the line II in FIG.
- the photocathode 22 is formed at the bottom of one end of the recess 201 of the upper frame 2.
- a photocathode terminal 21 is in electrical contact with the photocathode 22, and a predetermined voltage is applied to the photocathode 22 via the photocathode terminal 21.
- Main surface 20a of upper frame 2 (Fig. 2
- the upper frame 2 is fixed to the side wall frame 3 by joining the main surface 30a (see FIG. 2) of the side wall frame 3 to each other.
- a recess 301 and a through portion 302 of the side wall frame 3 are arranged.
- An electron multiplier 31 is disposed in the recess 301 of the side wall frame 3, and a gap 301 b is formed between the wall at one end of the recess 301 and the electron multiplier 31.
- one end of the electron multiplying portion 31 of the side wall frame 3 is located immediately below the photocathode 22 of the upper frame 2.
- Channel electrodes 320 constituting the anode 32 are respectively arranged in the through-holes 302 of the side wall frame 3. The protrusions of each channel electrode 320 are arranged so as not to contact the inner wall of the through-hole 302.
- a gap 302a is formed between the protrusion of each channel electrode 320 and the through-hole 302. .
- the protrusions of each channel electrode 320 and the corresponding grooves are arranged so as to partially overlap each other (part of the protrusions are inserted into the corresponding grooves).
- the surface 30b (see FIG. 2) of the side wall frame 3 and the main surface 40a (see FIG. 2) of the lower frame 4 are joined to fix the lower frame 4 to the side wall frame 3.
- the electron multiplying portion 31 of the side wall frame 3 is also fixed to the lower frame 4 by bonding.
- the envelope of the electron multiplier la is obtained by joining the upper frame 2 and the lower frame 4, each of which is made of glass material, to the side wall frame with the side wall frame 3 being sandwiched therebetween.
- a space is formed inside the envelope, and when the envelope composed of the upper frame 2, the side wall frame 3, and the lower frame 4 is assembled, a vacuum-tight process is performed to assemble the envelope.
- the inside of the vessel is maintained in a vacuum state (details will be described later).
- the photocathode side terminal 401 and the anode side terminal 403 of the lower frame 4 are in electrical contact with the silicon substrate 30 of the side wall frame 3 respectively, the photocathode side terminal 401 and the anode side terminal 403 are connected to each other.
- a potential difference is generated in the longitudinal direction of the silicon substrate 30 (the direction intersecting with the direction in which photoelectrons are emitted from the photocathode 22 and the direction in which secondary electrons travel through the electron multiplier 31). be able to.
- FIG. 4 shows a structure in the vicinity of the wall portion 311 of the side wall frame 3.
- the convex portion 31 la is formed on the side wall of the wall portion 311 which is disposed in the concave portion 301 of the silicon substrate 30.
- the convex portions 31 la are alternately arranged on the opposite wall portions 311 so as to be different from each other.
- the convex portion 3 1 la is uniformly formed from the upper end to the lower end of the wall portion 311.
- the photomultiplier tube la operates as follows. That is, ⁇ 2000 V is applied to the photocathode side terminal 401 of the lower frame 4, and 0 V is applied to the anode side terminal 403.
- the resistance of the silicon substrate 30 is approximately 10 ⁇ .
- the resistance value of the silicon substrate 30 can be adjusted by changing the volume, for example, the thickness of the silicon substrate 30. For example, the resistance value can be increased by reducing the thickness of the silicon substrate.
- photoelectrons are emitted from the photocathode 22 toward the side wall frame 3. The emitted photoelectrons reach the electron multiplying portion 31 located immediately below the photoelectric surface 22.
- the photoelectrons that have reached the electron multiplying portion 31 are directed toward the anode 32.
- grooves defined by a plurality of wall portions 311 are formed as electron multiplying channels. Accordingly, the photoelectrons that have reached the electron multiplying portion 31 from the photocathode 22 collide with the side wall of the wall portion 311 and the bottom portion 301a between the side walls 311 facing each other, and emit a plurality of secondary electrons.
- secondary electron cascade multiplication is performed for each electron multiplying channel, and the photocathode force is 10 5 to 10 7 secondary electrons per photoelectron reaching the electron multiplying unit. Generated. The generated secondary electrons reach the corresponding channel electrode 320 and are taken out from the anode terminal 402 as a signal.
- the structure placed in is shown.
- the secondary electrons cascade-multiplied in the groove which is an electron multiplication channel, have an electron emission end force of a predetermined value. It progresses to the anode 32 side at a spread angle of. In this way, since the electrons emitted by a certain groove force travel at a predetermined spread angle, they are different from the channel electrode corresponding to the groove. The possibility of reaching the channel electrode is significantly increased. That is, crosstalk between electron multiplication channels is likely to occur. In this case, the photomultiplier tube having the structure shown in the region (a) in FIG. 5 may not provide sufficient detection accuracy.
- each of the channel electrodes 320 constituting the anode 32 in the space between the pair of wall portions 311 defining the groove portion of the electron multiplying portion 31 In the structure in which a part of the structure is inserted, the above-mentioned problems are solved and detection accuracy can be dramatically improved.
- the groove is defined.
- the secondary electrons cascade-multiplied at the wall portion 311 and the bottom portion 301 reach the corresponding channel electrode 320 without being emitted from the end portion of the groove portion, so that crosstalk between the electron multiplication channels is achieved. Does not occur structurally. For this reason, the electrons from the photocathode 22 are cascade-multiplied in the groove portion, and then reliably reach the channel electrode 320 corresponding to the groove portion, so that high detection accuracy is obtained.
- the region (c) shown in FIG. 5 is a view of the region (b) in FIG. 5 also viewed from the side force, and the channel electrode 320 corresponding to the wall portion 311 defining each groove portion.
- the channel electrode 320 has a protrusion at the end of the electron multiplying portion 31, and the protrusion is spatially disposed so as to be separated from the lower frame 4 by a predetermined distance. Since these protrusions and the lower frame 4 are separated by a predetermined distance, the spatial distance between the wall 311 and the corresponding channel electrode 320 (more specifically, the protrusion) is shortened.
- the creepage distance through the lower frame 4 can be a sufficient distance.
- the withstand voltage between the two and the anode 32 are determined in determining the distance between the two. Electron collection efficiency is a conflicting issue. However, in such a state of being separated by a predetermined distance, the creepage distance is sufficiently secured while being spatially close. Therefore, the improvement of the electron collection efficiency which causes no problem in withstand voltage can be achieved by crosstalk between channels. Suppression can be possible.
- a photomultiplier tube having a transmissive photocathode has been described.
- Force The photomultiplier tube according to the present invention may have a reflective photocathode.
- a photomultiplier tube having a reflective photocathode can be obtained by forming a photocathode at the end opposite to the anode side end of the electron multiplier 31.
- a photomultiplier having a reflective photocathode is formed by forming an inclined surface facing the anode side on the end side opposite to the anode side of the electron multiplier 31 and forming a photocathode on the inclined surface.
- a double tube is obtained.
- a photomultiplier tube having a reflective photocathode can be obtained with the other structures having the same structure as the above-described electron multiplier la.
- the electron multiplying portion 31 arranged in the envelope is integrally formed in contact with the silicon substrate 30 constituting the side wall frame 3.
- the electron multiplier 31 may be affected by external noise via the side wall frame 3, and the detection accuracy may be reduced.
- the electron multiplier 31 and the anode 32 (channel electrode 320) formed integrally with the side wall frame 3 are spaced from the side wall frame 3 by a predetermined distance on the glass substrate 40 (lower frame 4). Each may be arranged.
- the gap 301b becomes a penetration portion
- the photocathode side terminal 401 is electrically connected to the photomultiplier side end of the electron multiplier 31 and the anode side terminal 403 is electrically connected to the anode end of the electron multiplier 31. Arranged so as to contact each other.
- the upper frame 2 constituting a part of the envelope is constituted by the glass substrate 20, and the glass substrate 20 itself functions as a transmission window.
- the upper frame 2 may be formed of a silicon substrate.
- a transmission window is formed in either the upper frame 2 or the side wall frame 3.
- the method of forming the transmissive window is, for example, to etch both surfaces of an SOI (Silicon On Insulator) substrate where both surfaces of the splatter glass substrate are sandwiched between silicon substrates, and to use a part of the exposed sputtered glass substrate as the transmissive window. it can.
- SOI Silicon On Insulator
- the silicon substrate in the transmission window forming region may be etched to have a thickness of about several meters and then vitrified by thermal oxidation.
- the double-sided force of the silicon substrate may be etched or may be etched from only one side.
- a silicon substrate having a diameter of 4 inches (a constituent material of the side wall frame 3 in FIG. 2) and two glass substrates having the same shape (the upper frame 2 and the lower frame in FIG. 2). 4) are prepared. They are processed as described below for each minute area (for example, several millimeters square). When the processing described below is completed, the photomultiplier tube is completed by dividing into regions. Subsequently, the processing method will be described with reference to FIGS.
- a silicon substrate 50 (corresponding to the side wall frame 3) having a thickness of 0.3 mm and a specific resistance of 30 k ⁇ ′cm is prepared.
- a silicon thermal oxide film 60 and a silicon thermal oxide film 61 are formed on both surfaces of the silicon substrate 50, respectively.
- the silicon thermal oxide film 60 and the silicon thermal oxide film 61 function as a mask during DEEP-RIE (Reactive Ion Etching) processing.
- a resist film 70 is formed on the back side of the silicon substrate 50.
- the resist film 70 includes a removal portion 701 corresponding to a gap between the through-hole 302 in FIG.
- DEEP-RIE calorie is performed.
- the silicon substrate 50 is separated from the gap 501 and each channel electrode 320 corresponding to the gap between the through-hole 302 and the channel electrode 320 in FIG. A spacing portion (not shown) is formed.
- a resist film 71 is formed on the surface side of the silicon substrate 50.
- the resist film 71 includes a removal portion 711 corresponding to the gap between the wall 311 and the recess 301 in FIG. 2, and a removal portion 712 corresponding to the gap between the through portion 302 and the channel electrode 320 in FIG.
- the removal portion corresponding to the groove between the wall portions 3 11 (the portion indicated by the region A in the region (e) in FIG. 6) and the through portion for separating the channel electrodes 320 from each other. (The region indicated by region B in region (e) in FIG. 6) is formed.
- the silicon thermal oxide film 60 is etched in this state, the removal portion 601 corresponding to the gap between the wall portion 311 and the recess portion 301 in FIG.
- the removal portion 602 corresponding to the gap between the penetration portion 302 and the channel electrode 320 in FIG. 2 and the removal portion corresponding to the groove between the wall portions 311 in FIG. 2 are electrically isolated from each other.
- a removal portion corresponding to the electrode 320 is formed.
- the glass substrate 80 (corresponding to the lower frame 4) is an anode on the back side of the silicon substrate 50. They are joined (see area (e) shown in Fig. 6).
- a hole 801 corresponding to the hole 401 in FIG. 2 a hole 802 corresponding to the hole 402 in FIG. 2, and a hole 803 corresponding to the hole 403 in FIG.
- DEEP-RIE processing is performed on the surface side of the silicon substrate 50.
- the resist film 71 functions as a mask material during DEEP-RIE processing and enables processing with a high aspect ratio.
- the resist film 71 and the silicon thermal oxide film 60 are removed.
- the through-hole that reaches the glass substrate 80 is the portion that has been processed in advance to separate the gap 501 and each channel electrode 320 from the back surface.
- an island-like portion 52 corresponding to the channel electrode 320 in FIG. 2 is formed.
- the island portions 52 corresponding to the channel electrodes 320 are fixed to the glass substrate 80 by anodic bonding.
- a groove 51 corresponding to the groove between the wall 311 in FIG. 2 and a recess 503 corresponding to the gap between the wall 311 and the recess 301 in FIG. 2 are also formed.
- a secondary electron emission surface is formed on the side wall and bottom 301a of the groove 51.
- the groove 51 corresponding to the groove between the walls 311 and the island 52 corresponding to the channel electrode 320 are partially overlapped when viewed from the side surface, so that the corresponding channel electrode in the groove A structure in which a part of 320 is inserted is realized.
- a glass substrate 90 corresponding to the upper frame 2 is prepared.
- a concave portion 901 (corresponding to the concave portion 201 in FIG. 2) is formed in the glass substrate 90 by spot facing, and a hole 902 (corresponding to the hole 202 in FIG. 2) is formed from the surface of the glass substrate 90 to the concave portion 901. Is provided.
- the photocathode terminal 92 corresponding to the photocathode terminal 21 in FIG. 2 is inserted and fixed in the hole 902, and the photocathode 91 is formed in the recess 901.
- FIG. 8 is a view showing the structure of a second embodiment of the photomultiplier according to the present invention.
- FIG. 8 shows a cross-sectional structure of the photomultiplier tube 10.
- the photomultiplier tube 10 includes an upper frame 11, a side wall frame 12 (silicon substrate), a first lower frame 13 (glass member), and a second frame.
- the lower frame 14 (substrate) is joined to each other.
- the upper frame 11 also has a glass material force, and a concave portion 1 lb is formed on the surface facing the side wall frame 12.
- the photocathode 112 is formed over almost the entire bottom of the recess 1 lb.
- a photocathode electrode 113 for applying a potential to the photocathode 112 and a surface electrode terminal 111 in contact with a surface electrode described later are disposed at one end and the other end of the recess 1 lb, respectively.
- a large number of holes 121 are provided in the silicon substrate 12a in parallel with the tube axis direction.
- the inner surface of the hole 121 is provided with a convex portion 121a for causing electrons to collide, and a secondary electron emission surface is formed on the inner surface of the hole 121 including the convex portion 121a (each hole 121 has It becomes an electron multiplication channel).
- the inner wall of the side wall frame 12 (inside the envelope) can be used as a part of the electron multiplication channel wall.
- a front surface electrode 122 and a rear surface electrode 123 are disposed in the vicinity of the opening at both ends of each hole 121. A region (b) in FIG.
- FIG. 8 shows the positional relationship between the hole 121 and the surface electrode 122.
- the surface electrode 122 is disposed so as to face the hole 121.
- the surface electrode 122 is in contact with the surface electrode terminal 111, and the back electrode terminal 143 is in contact with the back electrode 123. Therefore, an electric potential is generated in the side wall frame 12 in the axial direction of the hole 121, and the photoelectrons emitted from the photocathode 112 travel in the hole 121 downward in the figure.
- the first lower frame 13 is used to connect the side wall frame 12 and the second lower frame 14. It is a member and is joined to both the side wall frame 12 and the second lower frame 14.
- the second lower frame 14 is composed of a silicon substrate 14a provided with a large number of holes 141.
- a plurality of channel electrodes 142 constituting the anode are inserted and fixed in the holes 141, respectively.
- Each channel electrode 142 is provided with a protrusion 142a, and is fixed in a state in which a part of the protrusion 142a is inserted into the corresponding hole 121.
- the light that has also entered the upward force in the figure passes through the glass substrate of the upper frame 11 and enters the photocathode 112.
- photoelectrons are emitted from the photocathode 112 toward the side wall frame 12.
- the emitted photoelectrons enter the hole 121 of the first lower frame 13.
- the photoelectrons entering the hole 121 generate secondary electrons while colliding with the inner wall of the hole 121, and the generated secondary electrons are directed to the second lower frame 14. This secondary electron is extracted as a signal from the corresponding channel electrode 142.
- Region (a) shown in FIG. 9 is a diagram showing the structure of an analysis module to which the photomultiplier la is applied.
- the analysis module 85 includes a glass plate 850, a gas introduction pipe 851, a gas exhaust pipe 852, a solvent introduction pipe 853, a reagent mixing reaction path 854, a detection unit 855, a waste liquid reservoir 856, and a reagent path 857.
- the gas introduction pipe 851 and the gas exhaust pipe 852 are provided for introducing or exhausting a gas to be analyzed into the analysis module 85.
- the gas introduced from the gas introduction pipe 851 passes through the extraction path 853a formed on the glass plate 850, and is discharged to the outside from the gas exhaust pipe 852. Therefore, by introducing the solvent introduction pipe 853 force through the extraction path 853a, a specific substance of interest (for example,
- environmental hormones and fine particles can be extracted into a solvent.
- the solvent that has passed through the extraction path 853a is introduced into the reagent mixing reaction path 854 including the extracted substance of interest.
- the solvent in which the reagent is mixed advances the reagent mixing reaction path 854 toward the detection unit 855 while performing the reaction.
- the solvent for which the detection of the substance of interest has been completed in the detection unit 855 is discarded in the waste liquid reservoir 856.
- the configuration of the detection unit 855 will be described with reference to the area (b) shown in FIG.
- the detection unit 855 includes a light emitting diode array 855a, a photomultiplier tube la, a power source 855c, and an output circuit 855b.
- the light emitting diode array 855a is provided with a plurality of light emitting diodes corresponding to the reagent mixing reaction paths 854 of the glass plate 850, respectively. Excitation light (solid arrow in the figure) emitted from the light emitting diode array 855a is guided to the reagent mixing reaction path 854.
- a solvent that can contain the substance of interest flows in the reagent mixing reaction path 854, and after the substance of interest reacts with the reagent in the reagent mixing reaction path 854, it is excited to the reagent mixing reaction path 854 corresponding to the detection unit 855.
- Light is irradiated, and fluorescence or transmitted light (broken arrow in the figure) reaches the photomultiplier tube la. This fluorescent or transmitted light is applied to the photocathode 22 of the photomultiplier tube la.
- the photomultiplier tube la is provided with an electron multiplier section having a plurality of grooves (for example, equivalent to 20 channels), and therefore at which position (which reagent mixing reaction channel 854). It is possible to detect whether the fluorescence or transmitted light has changed. The detection result is output from the output circuit 855b.
- the power source 855c is a power source for driving the photomultiplier tube la.
- a glass thin plate (not shown) is disposed on the glass plate 850, and the gas introduction pipe 851, the gas exhaust pipe 852, the contact portion between the solvent introduction pipe 853 and the glass plate 850, the waste liquid reservoir 85 6 and the reagent Excluding the sample injection section in path 857, cover the extraction path 853a, reagent mixing reaction path 854, reagent path 857 (excluding the sample injection section), etc.
- the anode is composed of a plurality of channel electrode caps, and a part of each channel electrode is inserted into the groove or the through hole.
- the secondary electrons multiplied in each groove or the secondary electrons multiplied in each through-hole surely reach the corresponding channel electrode (electron multiplication). Reduced crosstalk between channels) and higher detection accuracy.
- the photomultiplier tube according to each example is excellent in earthquake resistance and impact resistance.
- the photomultiplier tube according to each example has improved electrical stability, earthquake resistance, and impact resistance. Since the channel electrode 320 is bonded to the glass substrate 40a on the entire lower surface, the anode 32 does not vibrate due to impact or vibration. For this reason, the photomultiplier tube has improved earthquake resistance and impact resistance.
- the working time is short because the handling is simple and the internal structure does not need to be assembled. Since the envelope (vacuum container) constituted by the upper frame 2, the side wall frame 3, and the lower frame 4 and the internal structure are integrally formed, the size can be easily reduced. Since there are no individual parts inside, no electrical or mechanical connection is required.
- the photomultiplier tube according to the present invention can be applied to various detection fields that require detection of weak light.
Landscapes
- Electron Tubes For Measurement (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06756886A EP1892749A4 (en) | 2005-08-10 | 2006-06-01 | photomultiplier |
US11/921,959 US7880385B2 (en) | 2005-08-10 | 2006-06-01 | Photomultiplier including an electronic-multiplier section in a housing |
CN200680019794XA CN101189701B (zh) | 2005-08-10 | 2006-06-01 | 光电倍增器 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-232535 | 2005-08-10 | ||
JP2005232535A JP4708118B2 (ja) | 2005-08-10 | 2005-08-10 | 光電子増倍管 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007017984A1 true WO2007017984A1 (ja) | 2007-02-15 |
Family
ID=37727175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/311009 WO2007017984A1 (ja) | 2005-08-10 | 2006-06-01 | 光電子増倍管 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7880385B2 (ja) |
EP (1) | EP1892749A4 (ja) |
JP (1) | JP4708118B2 (ja) |
CN (1) | CN101189701B (ja) |
WO (1) | WO2007017984A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007048633A (ja) * | 2005-08-10 | 2007-02-22 | Hamamatsu Photonics Kk | 光電子増倍管 |
JP2010198911A (ja) * | 2009-02-25 | 2010-09-09 | Hamamatsu Photonics Kk | 光電子増倍管 |
JP2010198910A (ja) * | 2009-02-25 | 2010-09-09 | Hamamatsu Photonics Kk | 光電子増倍管 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5497331B2 (ja) * | 2009-05-01 | 2014-05-21 | 浜松ホトニクス株式会社 | 光電子増倍管 |
JP5330083B2 (ja) * | 2009-05-12 | 2013-10-30 | 浜松ホトニクス株式会社 | 光電子増倍管 |
US8587196B2 (en) | 2010-10-14 | 2013-11-19 | Hamamatsu Photonics K.K. | Photomultiplier tube |
US8492694B2 (en) | 2010-10-14 | 2013-07-23 | Hamamatsu Photonics K.K. | Photomultiplier tube having a plurality of stages of dynodes with recessed surfaces |
JP5154717B2 (ja) | 2011-06-03 | 2013-02-27 | 浜松ホトニクス株式会社 | 電子増倍部及びそれを含む光電子増倍管 |
EP2560189B1 (de) * | 2011-08-16 | 2020-06-17 | Leica Microsystems CMS GmbH | Detektorvorrichtung |
US9490911B2 (en) | 2013-03-15 | 2016-11-08 | Fairfield Industries Incorporated | High-bandwidth underwater data communication system |
US9490910B2 (en) | 2013-03-15 | 2016-11-08 | Fairfield Industries Incorporated | High-bandwidth underwater data communication system |
WO2016081667A1 (en) * | 2014-11-18 | 2016-05-26 | Innosys, Inc. | A two-dimensional anode array or two-dimensional multi-channel anode for large-area photodetection |
US10488537B2 (en) | 2016-06-30 | 2019-11-26 | Magseis Ff Llc | Seismic surveys with optical communication links |
JP6875217B2 (ja) | 2017-06-30 | 2021-05-19 | 浜松ホトニクス株式会社 | 電子増倍体 |
CN114093743B (zh) * | 2021-11-25 | 2024-01-16 | 上海集成电路研发中心有限公司 | 一种光敏传感器及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6196645A (ja) * | 1984-10-18 | 1986-05-15 | Shimadzu Corp | マルチチヤンネル形検出器 |
JPS647465A (en) * | 1987-06-30 | 1989-01-11 | Murata Manufacturing Co | Secondary electron multiplier |
JPH0378905B2 (ja) | 1984-11-28 | 1991-12-17 | Nippon Suichu Sagyo Kk | |
JPH04359855A (ja) | 1991-06-06 | 1992-12-14 | Hamamatsu Photonics Kk | 二次電子増倍装置 |
US5568013A (en) * | 1994-07-29 | 1996-10-22 | Center For Advanced Fiberoptic Applications | Micro-fabricated electron multipliers |
WO2003098658A1 (fr) | 2002-05-15 | 2003-11-27 | Hamamatsu Photonics K.K. | Tube photomultiplicateur et son procédé d'utilisation |
WO2005078759A1 (ja) * | 2004-02-17 | 2005-08-25 | Hamamatsu Photonics K.K. | 光電子増倍管 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3184633A (en) * | 1960-11-03 | 1965-05-18 | Gen Electric | Semiconductive electron multiplier |
US3244922A (en) * | 1962-11-05 | 1966-04-05 | Itt | Electron multiplier having undulated passage with semiconductive secondary emissive coating |
JPS647465U (ja) | 1987-07-03 | 1989-01-17 | ||
JP3078905B2 (ja) | 1991-12-26 | 2000-08-21 | 浜松ホトニクス株式会社 | 電子増倍器を備えた電子管 |
US5264693A (en) | 1992-07-01 | 1993-11-23 | The United States Of America As Represented By The Secretary Of The Navy | Microelectronic photomultiplier device with integrated circuitry |
JPH06150876A (ja) * | 1992-11-09 | 1994-05-31 | Hamamatsu Photonics Kk | 光電子増倍管及び電子増倍管 |
US5453609A (en) * | 1993-10-22 | 1995-09-26 | Southeastern Universities Research Assn., Inc. | Non cross talk multi-channel photomultiplier using guided electron multipliers |
JP3748608B2 (ja) * | 1995-12-26 | 2006-02-22 | 浜松ホトニクス株式会社 | 光電子増倍管 |
US5880458A (en) * | 1997-10-21 | 1999-03-09 | Hamamatsu Photonics K.K. | Photomultiplier tube with focusing electrode plate having frame |
JP3919332B2 (ja) | 1998-05-18 | 2007-05-23 | 浜松ホトニクス株式会社 | 光電子増倍管及び分光測定装置 |
US6166365A (en) * | 1998-07-16 | 2000-12-26 | Schlumberger Technology Corporation | Photodetector and method for manufacturing it |
US6492657B1 (en) * | 2000-01-27 | 2002-12-10 | Burle Technologies, Inc. | Integrated semiconductor microchannel plate and planar diode electron flux amplifier and collector |
US7049747B1 (en) | 2003-06-26 | 2006-05-23 | Massachusetts Institute Of Technology | Fully-integrated in-plane micro-photomultiplier |
GB2409927B (en) | 2004-01-09 | 2006-09-27 | Microsaic Systems Ltd | Micro-engineered electron multipliers |
JP4708118B2 (ja) * | 2005-08-10 | 2011-06-22 | 浜松ホトニクス株式会社 | 光電子増倍管 |
-
2005
- 2005-08-10 JP JP2005232535A patent/JP4708118B2/ja active Active
-
2006
- 2006-06-01 WO PCT/JP2006/311009 patent/WO2007017984A1/ja active Application Filing
- 2006-06-01 US US11/921,959 patent/US7880385B2/en active Active
- 2006-06-01 EP EP06756886A patent/EP1892749A4/en not_active Ceased
- 2006-06-01 CN CN200680019794XA patent/CN101189701B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6196645A (ja) * | 1984-10-18 | 1986-05-15 | Shimadzu Corp | マルチチヤンネル形検出器 |
JPH0378905B2 (ja) | 1984-11-28 | 1991-12-17 | Nippon Suichu Sagyo Kk | |
JPS647465A (en) * | 1987-06-30 | 1989-01-11 | Murata Manufacturing Co | Secondary electron multiplier |
JPH04359855A (ja) | 1991-06-06 | 1992-12-14 | Hamamatsu Photonics Kk | 二次電子増倍装置 |
US5568013A (en) * | 1994-07-29 | 1996-10-22 | Center For Advanced Fiberoptic Applications | Micro-fabricated electron multipliers |
WO2003098658A1 (fr) | 2002-05-15 | 2003-11-27 | Hamamatsu Photonics K.K. | Tube photomultiplicateur et son procédé d'utilisation |
WO2005078759A1 (ja) * | 2004-02-17 | 2005-08-25 | Hamamatsu Photonics K.K. | 光電子増倍管 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1892749A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007048633A (ja) * | 2005-08-10 | 2007-02-22 | Hamamatsu Photonics Kk | 光電子増倍管 |
JP2010198911A (ja) * | 2009-02-25 | 2010-09-09 | Hamamatsu Photonics Kk | 光電子増倍管 |
JP2010198910A (ja) * | 2009-02-25 | 2010-09-09 | Hamamatsu Photonics Kk | 光電子増倍管 |
Also Published As
Publication number | Publication date |
---|---|
US7880385B2 (en) | 2011-02-01 |
CN101189701B (zh) | 2010-04-21 |
CN101189701A (zh) | 2008-05-28 |
JP4708118B2 (ja) | 2011-06-22 |
EP1892749A1 (en) | 2008-02-27 |
JP2007048633A (ja) | 2007-02-22 |
US20090045741A1 (en) | 2009-02-19 |
EP1892749A4 (en) | 2011-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4762719B2 (ja) | 光電子増倍管 | |
JP4708118B2 (ja) | 光電子増倍管 | |
JP4819437B2 (ja) | 光電子増倍管 | |
JP4708117B2 (ja) | 光電子増倍管 | |
WO2007099958A1 (ja) | 光電子増倍管、放射線検出装置および光電子増倍管の製造方法 | |
JP2007234366A (ja) | 光電子増倍管および放射線検出装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200680019794.X Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
REEP | Request for entry into the european phase |
Ref document number: 2006756886 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006756886 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11921959 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 2006756886 Country of ref document: EP |