WO2007010619A1 - Simoxウェーハの製造方法及びその方法で製造されたsimoxウェーハ - Google Patents
Simoxウェーハの製造方法及びその方法で製造されたsimoxウェーハ Download PDFInfo
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- WO2007010619A1 WO2007010619A1 PCT/JP2005/013498 JP2005013498W WO2007010619A1 WO 2007010619 A1 WO2007010619 A1 WO 2007010619A1 JP 2005013498 W JP2005013498 W JP 2005013498W WO 2007010619 A1 WO2007010619 A1 WO 2007010619A1
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- hydrofluoric acid
- silicon wafer
- wafer
- aqueous solution
- simox
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 178
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 95
- 239000001301 oxygen Substances 0.000 claims abstract description 95
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 238000004140 cleaning Methods 0.000 claims abstract description 59
- 238000005530 etching Methods 0.000 claims abstract description 45
- -1 oxygen ions Chemical class 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 74
- 238000005468 ion implantation Methods 0.000 claims description 62
- 239000007864 aqueous solution Substances 0.000 claims description 61
- 239000000243 solution Substances 0.000 claims description 36
- 230000007547 defect Effects 0.000 claims description 34
- 238000007654 immersion Methods 0.000 claims description 16
- 239000004094 surface-active agent Substances 0.000 claims description 14
- 230000000149 penetrating effect Effects 0.000 claims description 12
- 230000008014 freezing Effects 0.000 claims description 4
- 238000007710 freezing Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 238000007598 dipping method Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 155
- 229960002050 hydrofluoric acid Drugs 0.000 description 78
- 239000002245 particle Substances 0.000 description 65
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 22
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000002563 ionic surfactant Substances 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- LFLZOWIFJOBEPN-UHFFFAOYSA-N nitrate, nitrate Chemical compound O[N+]([O-])=O.O[N+]([O-])=O LFLZOWIFJOBEPN-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005185 salting out Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
Definitions
- the present invention relates to a method of manufacturing a SIMOX (Separation by Implanted Oxygen) wafer in which a silicon on insulator (Si) layer is formed.
- Examples include a cleaning method using a mixed solution of hydrogen and pure water, a cleaning method using ozone water and a hydrofluoric acid aqueous solution having a concentration of 0.2 to 2% by weight, and a cleaning method combining these cleaning methods. .
- the particle removal rate on the wafer surface is about 80% at the maximum, and the wafer is moved to the annealing process while leaving particles, reducing the wafer defects.
- the particle removal rate can be obtained by measuring the number of particles having a particle size of 0.20 m or more before and after cleaning using SurScan 6420 (surface inspection device manufactured by KLA-Tencor, USA).
- the wafer is washed to remove particles during the oxygen ion implantation process, thereby reducing the shielding area of the wafer particles during subsequent oxygen ion implantation. Therefore, current path defects in the buried oxide film can be reduced. Also, oxygen ions are implanted into the wafer with the surface oxide film previously formed on the wafer, and the surface oxide film is removed using a dilute hydrofluoric acid aqueous solution during the oxygen ion implantation process into the wafer. Therefore, the particles adhering to the surface of the surface oxide film are removed together with the surface oxide film, so that particles on the wafer surface can be effectively reduced.
- Patent Document 1 JP-A-8-78647 (Claims 1 to 5, paragraph (0019), paragraph (0024), FIG. 5)
- An object of the present invention is to produce a SIMOX wafer, which can efficiently remove particles adhering during oxygen ion implantation, and reduce deep defects penetrating the SOI layer in the SIMOX structure, and the method. Is to provide a modified SIMOX wafer. Means for solving the problem
- One embodiment of the SIMOX wafer manufacturing method of the present invention includes a step of implanting oxygen ions into a silicon wafer, a step of cleaning the silicon wafer implanted with oxygen ions, and heat-treating the cleaned silicon wafer.
- This is an improvement of the SIMOX wafer manufacturing method including the step of forming a buried oxide film inside the silicon wafer.
- the characteristic structure is that after the oxygen ions are implanted into the silicon wafer and before the silicon wafer is cleaned, the SiO film formed on the surface of the silicon wafer is immersed in a hydrofluoric acid solution. Further comprising the step of etching the ethtin.
- the etching rate for the two films is between 150 and 300 ⁇ .
- the silicon wafer is bonded to the SiO on the wafer surface.
- the surface of the silicon wafer can be etched at a high speed because it is immersed in a hydrofluoric acid aqueous solution with an etching rate of 150 to 300 ⁇ for the two films.
- a hydrofluoric acid aqueous solution with an etching rate of 150 to 300 ⁇ for the two films.
- the etching rate for nitric acid nitric acid is high, the strong bonding of particles containing a large amount of the bonding of carbon and oxygen is also broken. As a result, the particles can be almost completely removed from the silicon wafer surface.
- oxygen ion implantation into the silicon wafer is performed in a plurality of times, and one of these oxygen ion implantation steps is performed immediately after one injection step or two or more times. Immediately after the injection process, soak the silicon wafer in hydrofluoric acid solution.
- any one of the oxygen ion implantation steps for example, immediately after the first oxygen ion implantation, if the wafer is surface-treated by dipping in a hydrofluoric acid aqueous solution, the next oxygen ion implantation is performed. There are fewer particles left on the surface of the woofer before. As a result, since the shielding effect of oxygen ion implantation by particles is reduced, deep defects penetrating the SOI layer on the wafer surface that has undergone the SIMOX heat treatment process (hydrofluoric acid aqueous solution having a concentration of 50% by weight at 23 ° C.) The number of defects observed after 30 minutes of immersion in the substrate can be reduced.
- the temperature of the hydrofluoric acid aqueous solution exceeds the freezing point of the hydrofluoric acid aqueous solution 12 and is 40 ° C. or less, and the immersion time of the silicon wafer in the hydrofluoric acid aqueous solution is 10 to It may be 600 seconds.
- hydrofluoric acid for the SiO film is used.
- a surfactant is added to the hydrofluoric acid aqueous solution! It may be.
- the surfactant acts as a protective film on the wafer surface, so that particles can be prevented from reattaching to the wafer surface. .
- the drainage is good.
- One embodiment of the SIMOX wafer according to the present invention is manufactured by the SIMOX wafer manufacturing method of the present invention, and has a deep defect penetrating the SOI layer (in a hydrofluoric acid solution having a concentration of 50% by weight at a temperature of 23 ° C). Ru der number 0.05 or ZCM 2 following minutes immersed defects observed after the).
- particles remaining on the wafer surface before oxygen ion implantation are reduced by being manufactured by the method of manufacturing the SIMOX wafer of the present invention. For this reason, since the shielding effect of oxygen ion implantation by particles is reduced, deep defects penetrating the SOI layer (defects observed after being immersed in a hydrofluoric acid solution having a concentration of 50% by weight at a temperature of 23 ° C. for 30 minutes) The number of
- the silicon wafer is formed on the surface of the silicon wafer by immersing it in an aqueous hydrofluoric acid solution. Etching the SiO film, and hydrofluoric acid solution during the etching process
- the wafer surface is etched at high speed. At this time, since the etching rate with respect to the silicon silicate is high, the strong bond of particles containing a large amount of bonds between the key and oxygen is also broken. As a result, the particles can be almost completely removed from the silicon wafer surface.
- oxygen implantation into the silicon wafer is performed in a plurality of times, and the silicon ion implantation process is performed immediately after one of these oxygen ion implantation processes or immediately after each of two or more implantation processes. If the wafer is immersed in a hydrofluoric acid solution, particles remaining on the wafer surface before the next oxygen ion implantation can be reduced. For this reason, the shielding effect of oxygen ion implantation by particles is reduced. As a result, the number of deep defects penetrating the SOI layer (defects observed after 30 minutes of immersion in hydrofluoric acid solution with a concentration of 50% by weight at a temperature of 23 ° C) in wafers that have undergone the SIMOX treatment process. Can be reduced.
- the surfactant acts as a protective film on the wafer surface when the silicon wafer is pulled up from the hydrofluoric acid aqueous solution to which the surfactant is added.
- the particles can be prevented from re-adhering to the wafer surface, and the water drainage after rinsing with pure water of the wafer is good.
- the SIMOX wafer manufactured by the above method has a number of deep defects penetrating the SOI layer (defects observed after being immersed in a hydrofluoric acid solution having a concentration of 50% by weight at a temperature of 23 ° C for 30 minutes). Zcm 2 or less.
- FIG. 1 is a diagram showing an etching process step using a hydrofluoric acid aqueous solution having an etching rate of 150 to 300 ⁇ and a rinsing step using pure water according to the present embodiment.
- FIG. 2 is a block diagram including an oxygen ion implantation process and a cleaning process of the silicon wafer of this embodiment.
- FIG. 3A is a graph showing a particle removal rate in Examples 1 to 12.
- FIG. 3B is a diagram showing the particle removal rate of Comparative Examples 1 to 13.
- FIG. 3C is a diagram showing a particle removal rate of Comparative Examples 14 to 26.
- FIG. 4A is a diagram showing a particle removal rate of Comparative Examples 27 to 39.
- FIG. 4B is a diagram showing a particle removal rate of Comparative Examples 40 to 52.
- FIG. 5 is a diagram showing the number of deep defects (defects observed after being immersed in a 50 wt% hydrofluoric acid aqueous solution at a temperature of 23 ° C. for 30 minutes) penetrating the SOI layers of Examples and Comparative Examples.
- the SIMOX wafer manufacturing method includes a step of implanting oxygen ions into the silicon wafer 11, a step of cleaning the wafer 11 implanted with oxygen ions, and a heat treatment of the cleaned wafer 11. A step of forming a buried oxide film inside the wafer 11.
- oxygen ion implantation is performed in three stages.
- a cleaning method using SC-1 cleaning solution As a cleaning method for wafer 11, a cleaning method using SC-1 cleaning solution, a cleaning method using a mixed solution of sulfuric acid, hydrogen peroxide and pure water, and a mixed solution of hydrochloric acid, hydrogen peroxide and pure water were used. Cleaning method, ozone water and cleaning method using aqueous solution of fluoric acid with a concentration of 0.2 to 2% by weight, cleaning method combining these cleaning methods, or cleaning combining these cleaning methods and megasonic cleaning The method etc. are mentioned.
- the megasonic cleaning is a cleaning in which an object to be cleaned is irradiated with an ultrasonic wave of 0.8 to: LO MHz in a liquid.
- the silicon ingot pulled up by the Chiyoklarsky method is sliced, polished, and then cleaned in the first cleaning step (Fig. 2).
- the cleaned wafer 11 is implanted with oxygen ions for the first time (first oxygen ion implantation step). This oxygen ion implantation is performed at a dose of 5 ⁇ 10 16 to 2 ⁇ 10 atoms / cm 2 with the wafer 11 heated to 300 to 500 ° C.
- the wafer 11 is immersed in a hydrofluoric acid aqueous solution 12 to etch the SiO film formed on the surface of the wafer 11 (FIGS. 1 and 2).
- the etching rate of the hydrofluoric acid aqueous solution 12 for the SiO film during this etching process is 1
- the concentration of the hydrofluoric acid solution to achieve an etching rate of 150 to 300 ⁇ is 2.5 to 50% by weight at 23 ° C, and the hydrofluoric acid solution to achieve an etching rate of 500 to 1000 AZ.
- the concentration of the aqueous acid solution is 10 to 20 double stars at 23 ° C, and the concentration of the aqueous hydrofluoric acid solution to achieve an etching rate of 500 to 600 AZ is 10 to 12% by weight at 23 ° C. .
- the chemical bond between oxygen and particles is thought to be a large number of bonds, not just one bond per particle. In order to break these bonds, it is necessary for HF or HF- to meet the Si-O bond, and the probability of this encounter is limited.
- the SC-1 cleaning solution is used instead of the wafer surface treatment that is immersed in a hydrofluoric acid solution with an etching rate of 150 to 300 ⁇ ⁇ for the two films, the SC-1 cleaning solution is treated with silicon and diacid. Etching rate for silicon (SiO 2) is
- the fixed point particles refer to notches that remain in the same position before and after the second cleaning step.
- the temperature of the hydrofluoric acid aqueous solution 12 exceeds the freezing point of the hydrofluoric acid aqueous solution and is 40 ° C or lower, preferably 20 to 25 ° C.
- the immersion time of wafer 11 in hydrofluoric acid aqueous solution 12 is 10 to 600 seconds, preferably 30 to L00 seconds.
- etching rate for the two films is less than 150 AZ, it is impossible to break the strong bond of particles that contain a large amount of bonds between oxygen and oxygen, which has a slow etching rate on the surface of wafer 11, that is, when oxygen ions are implanted.
- the chemical bond of particles firmly bonded through oxygen cannot be broken.
- it exceeds 3000 A Z the surface roughness of wafer 11 will be poor. For this reason, hydrofluoric acid aqueous solution 12 Si O 50-3000
- the etching rate for the two films is in the range of 1 AZ.
- the etching process cannot be performed below the freezing point of the hydrofluoric acid aqueous solution 12. Above 40 ° C, hydrofluoric acid aqueous solution mist is generated, making it difficult to handle and poor surface roughness. For this reason, the temperature of the hydrofluoric acid aqueous solution 12 is set in the range of 40 ° C. or less exceeding the solidification point of the hydrofluoric acid aqueous solution.
- the immersion time of wafer 11 in hydrofluoric acid aqueous solution 12 is less than 10 seconds, the time for immersion is too short, and the strong bonds of particles containing a large amount of bonds between silicon and oxygen cannot be broken, that is, oxygen ion implantation. Sometimes it is impossible to break the chemical bonds of the particles that are tightly bonded through the use of silicon and oxygen. If it exceeds 600 seconds, the surface roughness deteriorates. For this reason, the immersion time of the wafer 11 in the hydrofluoric acid aqueous solution 12 is set to a range of 10 to 600 seconds.
- hydrofluoric acid aqueous solution 12 is etched into the SiO film formed on the surface of the wafer 11.
- the immersion time can be set so that H ⁇ (1500 / R) (seconds). preferable. As a result, the optimum wafer 11 immersion time based on the etching rate of the hydrofluoric acid aqueous solution 12 can be quickly obtained.
- a surfactant to the hydrofluoric acid aqueous solution 12.
- the surfactant acts as a protective film on the surface of the wafer 11, thereby preventing particles from reattaching to the surface of the wafer 11. Also this When woofer 11 is rinsed with pure water, the drainage is good.
- surfactant examples include ionic surfactants and nonionic surfactants.
- the addition amount of the surfactant is from 0.1 to LO weight%, preferably from 0.3 to 1 weight%.
- the added amount of the surfactant is less than 0.1% by weight, it will not function as a protective film on the surface of the woofer 11, and if it exceeds 10% by weight, salting out will occur and etching will be hindered. For this reason, the amount of surfactant added is in the range of 0.1 to L0% by weight.
- the rinsing tank 13 has a tank body 13a for storing pure water 14, and an overflow tank 13b that is provided on the upper outer periphery of the tank body 13a and receives the pure water 14 that has overflowed from the tank body 13a.
- a supply pipe 13c for supplying pure water 14 to the tank body 13a is connected to the lower part of the tank body 13a, and a discharge pipe 13d for discharging the pure water 14 accumulated in the overflow tank 13b is connected to the lower surface of the overflow tank 13b. Is done.
- the wafer 11 is subjected to SIMOX heat treatment through the second oxygen ion implantation step, the third cleaning step, the third oxygen ion implantation step, and the fourth cleaning step (FIG. 2).
- oxygen ions are implanted at a dose of 5 ⁇ 10 16 to 2 ⁇ 10 17 atoms / cm 2 with the wafer held at 300 to 500 ° C.
- oxygen ions are implanted at a dose of 1 ⁇ 10 15 to 1 ⁇ 10 17 atoms / cm 2 with the wafer kept at room temperature.
- the oxygen ion implantation into the silicon wafer is performed in three times, but the oxygen ion implantation into the silicon wafer may be performed once or twice or four times or more. It may be divided into
- the force of immersing the silicon wafer in the hydrofluoric acid aqueous solution immediately after the first oxygen ion implantation, the force of immersing the silicon wafer in the hydrofluoric acid aqueous solution, immediately after the second or third oxygen ion implantation, or any one of two times, either 1 to 3 times.
- the silicon wafer may be immersed in a hydrofluoric acid aqueous solution immediately after oxygen ion implantation or immediately after each of the three oxygen ion implantations.
- the SIMOX woofer manufactured in this way has the effect of shielding oxygen ion implantation by particles when there are fewer particles left on the woofer surface before oxygen ion implantation. Since decreases, the number is very 05 or ZCM 2 below 0. deep defects penetrating through the SOI layer (defects that are observed after immersion concentration of 50 wt% of the aqueous solution of hydrofluoric acid 12 30 minutes at a temperature 23 ° C) Less.
- these wafers 11 are attached to the SiO 11 surface.
- Etching was performed by dipping for 60 seconds in a hydrofluoric acid aqueous solution 12 having an etching rate of 600 AZ min (concentration of hydrofluoric acid aqueous solution: 10% by weight) and a temperature of 23 ° C. for the two films.
- a hydrofluoric acid aqueous solution 12 having an etching rate of 600 AZ min (concentration of hydrofluoric acid aqueous solution: 10% by weight) and a temperature of 23 ° C. for the two films.
- these wafers 11 were immersed in a rinse tank 13 overflowing with pure water 14 for 3 minutes and then dried.
- these woofers 11 were washed by a single wafer spin method. Specifically, while rotating the wafer 11 one by one, the surface was sprayed with ozone water with a concentration of 15 ppm for 20 seconds, and then washed with a 0.5 wt% hydrofluoric acid aqueous solution for 10 seconds. Washed. After these washings were repeated three times (second washing step), the wafer was dried.
- these wafers 11 were subjected to SIMOX heat treatment through a second oxygen ion implantation step, a third cleaning step, a third oxygen ion implantation step, and a fourth cleaning step.
- These ueno cakes were designated as Examples 1 to 3.
- these wafers are applied to the SiO film on the wafer surface.
- these wafers are applied to the SiO film on the wafer surface.
- Etching was performed by immersing in an aqueous hydrofluoric acid solution having an etching rate of 400 AZ min (concentration of hydrofluoric acid aqueous solution: 25% by weight) and a temperature of 15 ° C. for 300 seconds. Furthermore, these wafers were immersed in a rinse tank overflowing with pure water for 1 minute. Except for the above conditions, three SIMOX wafers were produced in the same manner as in Examples 1 to 3. These wafers were designated as Examples 7-9.
- these wafers are applied to the SiO film on the wafer surface.
- H 2 O: H 0 0.5: 1: 10) soaked for 10 minutes for cleaning (second cleaning step) and then dried.
- oxygen ion implantation was performed in three steps. Immediately after the first oxygen ion implantation, these wafers were washed by a single wafer spin method. Specifically, while rotating wafers one by one, the surface was sprayed with ozone water of 15 ppm concentration for 20 seconds, and then washed with 0.5% by weight hydrofluoric acid aqueous solution for 10 seconds. Purified. After repeating these washings three times (second washing step), the wafer was dried.
- these wafers are applied to the SiO film on the wafer surface.
- Etching was performed by immersing in an aqueous hydrofluoric acid solution having an etching rate of 30 AZ min (concentration of hydrofluoric acid aqueous solution: 0.5 wt%) and a temperature of 23 ° C. for 30 seconds.
- a SIMOX wafer was produced in the same manner as in Example 1 except for this condition. These wafers were designated as Comparative Examples 27-39.
- these wafers are applied to the SiO film on the wafer surface.
- Etching was performed by immersing in an aqueous hydrofluoric acid solution having an etching rate of 120 AZ min (concentration of hydrofluoric acid aqueous solution: 2.0 wt%) and a temperature of 23 ° C. for 30 seconds.
- a SIMOX wafer was produced in the same manner as in Example 1 except for this condition. These wafers were designated as Comparative Examples 40-52.
- the removal rate of the fixed point particles was calculated by the following method. First, using SurScan 6420 (surface inspection device manufactured by KLA-Tencor, USA), the number of particles having a particle size of 0.20 m or more before and after the second cleaning step was measured. Next, the ratio of the number of particles with a particle size of 0.20 m or more after the second cleaning step divided by the number of particles with a particle size of 0.20 ⁇ m or more before the second cleaning step is expressed as a percentage. The particle removal rate was used. The results are shown in FIGS. 3A to 3C and FIGS. 4A and 4B. As is clear from FIGS. 3A to 3C and FIGS.
- the removal rate of the fixed point particles was as low as 45 to 85%, while in Examples 1 to 12, The removal rate of fixed point particles was extremely high at 88-100%.
- the reason is that the removal rate of the fixed point particles in the example is extremely high by injecting oxygen ions in three portions and reducing the particles just before the second oxygen ion implantation. it is conceivable that. In other words, since the third oxygen ion implantation is performed at a low temperature, it is considered that defect nuclei do not occur even if a certain amount of particle force is present.
- the number of defects was determined by immersing the above wafer in a hydrofluoric acid solution with a concentration of 50% by weight at 23 ° C for 30 minutes to reveal defects in the SOI layer, and then observing these defects with an optical microscope. And measured. The results are shown in Fig. 5.
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05762078A EP1909309A4 (en) | 2005-07-22 | 2005-07-22 | METHOD OF MANUFACTURING A SIMOX WAFER AND SIMOX WAFER MANUFACTURED ACCORDING TO SUCH A METHOD |
PCT/JP2005/013498 WO2007010619A1 (ja) | 2005-07-22 | 2005-07-22 | Simoxウェーハの製造方法及びその方法で製造されたsimoxウェーハ |
CNA2005800511218A CN101228613A (zh) | 2005-07-22 | 2005-07-22 | Simox晶片的制造方法及用该方法制造的simox晶片 |
DE05762078T DE05762078T1 (de) | 2005-07-22 | 2005-07-22 | Verfahren zur herstellung eines simox-wafers und durch ein solches verfahren hergestellter simox-wafer |
US11/995,342 US20090130816A1 (en) | 2005-07-22 | 2005-07-22 | Method for manufacturing simox wafer and simox wafer manufactured thereby |
Applications Claiming Priority (1)
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PCT/JP2005/013498 WO2007010619A1 (ja) | 2005-07-22 | 2005-07-22 | Simoxウェーハの製造方法及びその方法で製造されたsimoxウェーハ |
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WO2007010619A1 true WO2007010619A1 (ja) | 2007-01-25 |
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Country Status (5)
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US (1) | US20090130816A1 (ja) |
EP (1) | EP1909309A4 (ja) |
CN (1) | CN101228613A (ja) |
DE (1) | DE05762078T1 (ja) |
WO (1) | WO2007010619A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011078219A1 (ja) * | 2009-12-22 | 2011-06-30 | 株式会社新菱 | 精製シリコン含有粉末回収方法 |
US8190304B2 (en) | 2008-03-17 | 2012-05-29 | Eurocopter | Automatic configuration-tracking apparatus, and a method and a system for such tracking |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1906450A4 (en) * | 2005-07-11 | 2011-07-27 | Sumco Corp | PROCESS FOR MANUFACTURING A SIMOX SUBSTRATE AND SIMOX SUBSTRATE MANUFACTURED BY THE PROCESS |
JP2010015774A (ja) * | 2008-07-02 | 2010-01-21 | Sumco Corp | イオン注入装置 |
US8030183B2 (en) * | 2008-09-08 | 2011-10-04 | Sumco Corporation | Method for reducing crystal defect of SIMOX wafer and SIMOX wafer |
JP2010199569A (ja) * | 2009-02-02 | 2010-09-09 | Sumco Corp | Simoxウェーハの製造方法 |
JP2011029618A (ja) | 2009-06-25 | 2011-02-10 | Sumco Corp | Simoxウェーハの製造方法、simoxウェーハ |
US8858818B2 (en) * | 2010-09-30 | 2014-10-14 | Suvolta, Inc. | Method for minimizing defects in a semiconductor substrate due to ion implantation |
KR101474184B1 (ko) * | 2011-03-04 | 2014-12-17 | 아사히 가세이 일렉트로닉스 가부시끼가이샤 | 반도체 장치, 반도체 장치의 제조 방법 |
US8778786B1 (en) | 2012-05-29 | 2014-07-15 | Suvolta, Inc. | Method for substrate preservation during transistor fabrication |
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JPH07193204A (ja) * | 1993-12-27 | 1995-07-28 | Nippon Steel Corp | 半導体基板の製造方法 |
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JPH0878647A (ja) * | 1994-09-07 | 1996-03-22 | Nippon Steel Corp | 埋め込み絶縁膜を有する半導体の製造方法 |
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US5363793A (en) * | 1990-04-06 | 1994-11-15 | Canon Kabushiki Kaisha | Method for forming crystals |
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JP3408090B2 (ja) * | 1996-12-18 | 2003-05-19 | ステラケミファ株式会社 | エッチング剤 |
SG71903A1 (en) * | 1998-01-30 | 2000-04-18 | Canon Kk | Process of reclamation of soi substrate and reproduced substrate |
JP3762144B2 (ja) * | 1998-06-18 | 2006-04-05 | キヤノン株式会社 | Soi基板の作製方法 |
JP2000082679A (ja) * | 1998-07-08 | 2000-03-21 | Canon Inc | 半導体基板とその作製方法 |
EP1389496A1 (en) * | 2001-05-22 | 2004-02-18 | Mitsubishi Chemical Corporation | Method for cleaning surface of substrate |
JPWO2002097892A1 (ja) * | 2001-05-29 | 2004-09-16 | 新日本製鐵株式会社 | Soi基板 |
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2005
- 2005-07-22 DE DE05762078T patent/DE05762078T1/de active Pending
- 2005-07-22 CN CNA2005800511218A patent/CN101228613A/zh active Pending
- 2005-07-22 EP EP05762078A patent/EP1909309A4/en not_active Withdrawn
- 2005-07-22 US US11/995,342 patent/US20090130816A1/en not_active Abandoned
- 2005-07-22 WO PCT/JP2005/013498 patent/WO2007010619A1/ja not_active Application Discontinuation
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JPH07193204A (ja) * | 1993-12-27 | 1995-07-28 | Nippon Steel Corp | 半導体基板の製造方法 |
JPH07216392A (ja) * | 1994-01-26 | 1995-08-15 | Daikin Ind Ltd | 洗浄剤及び洗浄方法 |
JPH0878647A (ja) * | 1994-09-07 | 1996-03-22 | Nippon Steel Corp | 埋め込み絶縁膜を有する半導体の製造方法 |
JPH11288858A (ja) * | 1998-01-30 | 1999-10-19 | Canon Inc | Soi基板の再生方法及び再生基板 |
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US8190304B2 (en) | 2008-03-17 | 2012-05-29 | Eurocopter | Automatic configuration-tracking apparatus, and a method and a system for such tracking |
WO2011078219A1 (ja) * | 2009-12-22 | 2011-06-30 | 株式会社新菱 | 精製シリコン含有粉末回収方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090130816A1 (en) | 2009-05-21 |
EP1909309A4 (en) | 2010-10-20 |
EP1909309A1 (en) | 2008-04-09 |
CN101228613A (zh) | 2008-07-23 |
DE05762078T1 (de) | 2008-08-21 |
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