WO2006127327A3 - A resonance method for production of intense low-impurity ion beams of atoms and molecules - Google Patents
A resonance method for production of intense low-impurity ion beams of atoms and molecules Download PDFInfo
- Publication number
- WO2006127327A3 WO2006127327A3 PCT/US2006/018847 US2006018847W WO2006127327A3 WO 2006127327 A3 WO2006127327 A3 WO 2006127327A3 US 2006018847 W US2006018847 W US 2006018847W WO 2006127327 A3 WO2006127327 A3 WO 2006127327A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ionization
- production
- molecules
- resonant
- atoms
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/24—Ion sources; Ion guns using photo-ionisation, e.g. using laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0812—Ionized cluster beam [ICB] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Particle Accelerators (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020077018174A KR101246186B1 (en) | 2005-05-20 | 2006-05-16 | A resonance method for production of intense low-impurity ion beams of atoms and molecules |
JP2008512429A JP5420239B2 (en) | 2005-05-20 | 2006-05-16 | Resonance method for the production of atomic and molecular low-impurity strong ion beams. |
CN2006800174740A CN101292139B (en) | 2005-05-20 | 2006-05-16 | A resonance method for production of intense low-impurity ion beams of atoms and molecules |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68301605P | 2005-05-20 | 2005-05-20 | |
US60/683,016 | 2005-05-20 | ||
US11/185,141 | 2005-07-20 | ||
US11/185,141 US7365340B2 (en) | 2005-07-20 | 2005-07-20 | Resonance method for production of intense low-impurity ion beams of atoms and molecules |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006127327A2 WO2006127327A2 (en) | 2006-11-30 |
WO2006127327A3 true WO2006127327A3 (en) | 2007-11-29 |
Family
ID=37452588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/018847 WO2006127327A2 (en) | 2005-05-20 | 2006-05-16 | A resonance method for production of intense low-impurity ion beams of atoms and molecules |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5420239B2 (en) |
KR (1) | KR101246186B1 (en) |
CN (1) | CN101292139B (en) |
WO (1) | WO2006127327A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102549812B (en) | 2009-10-02 | 2016-05-18 | 丰田自动车株式会社 | Lithium secondary battery and this positive electrode for battery |
CN101963596B (en) * | 2010-09-01 | 2012-09-05 | 中国科学院广州地球化学研究所 | Rare gas determination system based on quadrupole mass spectrometer |
GB2484488B (en) | 2010-10-12 | 2013-04-17 | Vg Systems Ltd | Improvements in and relating to ion guns |
WO2018046079A1 (en) * | 2016-09-07 | 2018-03-15 | Forschungszentrum Jülich GmbH | Tuneable charged particle vortex beam generator and method |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3395302A (en) * | 1966-01-10 | 1968-07-30 | High Voltage Engineering Corp | Vapor target for particle accelerators |
US4037100A (en) * | 1976-03-01 | 1977-07-19 | General Ionex Corporation | Ultra-sensitive spectrometer for making mass and elemental analyses |
US4486665A (en) * | 1982-08-06 | 1984-12-04 | The United States Of America As Represented By The United States Department Of Energy | Negative ion source |
US20020003208A1 (en) * | 1997-12-01 | 2002-01-10 | Vadim G. Dudnikov | Space charge neutralization of an ion beam |
US6452338B1 (en) * | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
US6573510B1 (en) * | 1999-06-18 | 2003-06-03 | The Regents Of The University Of California | Charge exchange molecular ion source |
US6686595B2 (en) * | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
US20040119025A1 (en) * | 2002-09-27 | 2004-06-24 | Klepper C. Christopher | Boron ion delivery system |
US20050051096A1 (en) * | 1999-12-13 | 2005-03-10 | Semequip, Inc. | Ion implantation ion source, system and method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817374A (en) * | 1994-06-28 | 1996-01-19 | Shimadzu Corp | Negative ion gun |
JPH0817376A (en) * | 1994-07-01 | 1996-01-19 | Mitsubishi Electric Corp | Ion source and ion implanter |
JP3156627B2 (en) * | 1997-03-14 | 2001-04-16 | 日本電気株式会社 | Negative ion source |
WO2002043803A1 (en) * | 2000-11-30 | 2002-06-06 | Semequip, Inc. | Ion implantation system and control method |
JP2003257357A (en) * | 2002-03-01 | 2003-09-12 | Nissin Electric Co Ltd | Particle injection device |
-
2006
- 2006-05-16 CN CN2006800174740A patent/CN101292139B/en active Active
- 2006-05-16 KR KR1020077018174A patent/KR101246186B1/en active IP Right Grant
- 2006-05-16 WO PCT/US2006/018847 patent/WO2006127327A2/en active Application Filing
- 2006-05-16 JP JP2008512429A patent/JP5420239B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3395302A (en) * | 1966-01-10 | 1968-07-30 | High Voltage Engineering Corp | Vapor target for particle accelerators |
US4037100A (en) * | 1976-03-01 | 1977-07-19 | General Ionex Corporation | Ultra-sensitive spectrometer for making mass and elemental analyses |
US4486665A (en) * | 1982-08-06 | 1984-12-04 | The United States Of America As Represented By The United States Department Of Energy | Negative ion source |
US20020003208A1 (en) * | 1997-12-01 | 2002-01-10 | Vadim G. Dudnikov | Space charge neutralization of an ion beam |
US6573510B1 (en) * | 1999-06-18 | 2003-06-03 | The Regents Of The University Of California | Charge exchange molecular ion source |
US6452338B1 (en) * | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
US20050051096A1 (en) * | 1999-12-13 | 2005-03-10 | Semequip, Inc. | Ion implantation ion source, system and method |
US6686595B2 (en) * | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
US20040119025A1 (en) * | 2002-09-27 | 2004-06-24 | Klepper C. Christopher | Boron ion delivery system |
Also Published As
Publication number | Publication date |
---|---|
WO2006127327A2 (en) | 2006-11-30 |
KR101246186B1 (en) | 2013-03-21 |
JP2008541406A (en) | 2008-11-20 |
JP5420239B2 (en) | 2014-02-19 |
CN101292139B (en) | 2013-04-24 |
CN101292139A (en) | 2008-10-22 |
KR20080016524A (en) | 2008-02-21 |
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