WO2006125730A1 - Organic photodetector with a thin layer construction - Google Patents

Organic photodetector with a thin layer construction Download PDF

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Publication number
WO2006125730A1
WO2006125730A1 PCT/EP2006/062300 EP2006062300W WO2006125730A1 WO 2006125730 A1 WO2006125730 A1 WO 2006125730A1 EP 2006062300 W EP2006062300 W EP 2006062300W WO 2006125730 A1 WO2006125730 A1 WO 2006125730A1
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WO
WIPO (PCT)
Prior art keywords
organic
photodetector
layer
bistable
bistable element
Prior art date
Application number
PCT/EP2006/062300
Other languages
German (de)
French (fr)
Inventor
Christoph Brabec
Ralph Pätzold
Carsten Tschamber
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to DE112006001309T priority Critical patent/DE112006001309A5/en
Publication of WO2006125730A1 publication Critical patent/WO2006125730A1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells

Definitions

  • the invention relates to an organic-based photodetector with an organic-based readout device in a space-saving thin-film construction.
  • Photodetectors have two basic operating modes, the so-called integration mode and the so-called single-electron mode. In the former, photons are collected and stored over a period of time. Thereafter, during the "readout period", the photons or the signals produced by the individual photons are read out by means of transistors, in particular thin-film transistors.
  • the single ⁇ NEN photons are punched directly into individual electrical signals Gewan ⁇ which can then be measured.
  • the integration mode is used in the medical field (e.g., in detector elements in X-ray machines) as well as in conventional optical photodetectors.
  • the prior art of these devices typically comprises egg ⁇ NEN detector over one pixelated usually photoactive layer over a time period collects the number of photons and stores NEN-housed ⁇ .
  • the detector read-out apparatus which comprises a switch for each detector pixel, the period by which the respective pixels of the photoactive layer to the readout ⁇ is switchable.
  • this switch is designed as a second, opposite diode (it is called the passive matrix arrangement with two lines per pixel).
  • TFT thin film transistor
  • Object of the present invention is therefore to provide an organic photodetector in the integration mode, which has a simple and inexpensive switch, which is made in the same thin-film technology as the actual De ⁇ detector.
  • a bistable element according to the invention is described, for example, in the publication by Liping Ma, Jie Liu, Seungmoon Pyo and Yang Yang in Applied Physics Letters, Volume 80, Number 3 January 21, 2002.
  • an organic compound for example 2-amino-4,5-imidazolene dicarbonitrile (AIDCN) in a sandwich structure with a centrally arranged metallic layer, for example aluminum, can be used as a switch because the composite of the three layers mentioned in US Pat Ground state initially has a very high resistance. Is now a voltage of typically about 3 V over the bistable element applies, then the sen ⁇ resistance reduced by several orders of magnitude. This state is maintained even when the voltage is off for any length of time.
  • AIDCN 2-amino-4,5-imidazolene dicarbonitrile
  • bistable switches By briefly applying a negative voltage, the resistance of the element can eventually return to its original (high) level brought ⁇ the. Therefore, such an element can be between two sta ⁇ bilen states back and forth. Another advantage of the aforementioned bistable switches is their extremely short switching time in the range of 1-lOns.
  • a read-out device which can be constructed of standard components, such as are already used, for example, in the CCD technology and on the one hand the control of the switch (that is to be applied on the bistable element voltage) and on the other ⁇ hand the Transfer or processing of the read-out signals
  • an organic photodetector according to the invention it is therefore proposed to install a bistable element for the integration mode on the rear side of the detector instead of the conventional transistors as a switch for the transition from the integration period to the readout period.
  • the bistable element is not attached individually for each pixel to be read out, but over a large area for all pixels in the form of a layer - at least 3-ply.
  • the leads must be structured in accordance with the pixel structure of the photoactive layer.
  • the bistable layer itself may be patterned according to the pixel structure of the underlying photoactive layer to make its own switch for each pixel.
  • the substrate or the carrier layer 1 can usually be found under the thickness of the overall system.
  • the first electrode layer 2 On top of this lies the first electrode layer 2, generally a transparent or at least one semitransparent layer, for example Ito (indium tin oxide).
  • a photoactive organic layer 3 there may be meh ⁇ eral organic layers or mixed systems, which form a photoactive system at the site).
  • the overlying layer is again a conductive layer, the second electrode layer 4.
  • the next higher layer is the first organic layer 5 of the bistable element 9, the me ⁇ tallische layer 6, in sandwich structure of the two organic layers 5 and 7 of the bistable
  • the second organic layer of the bistable element 7 and the termination forms the conductive layer 8 which, depending on the circuit, forms the counter electrode to the electrode layer 4 (for switching the element) and 2 (for reading out the stored charge carriers) ,
  • the bistable element may comprise any number of organic layers with any number of metallic layer as long as it in combination the essential egg ⁇ genschaft of a bistable switch, in particular the stability ⁇ formality in two different resistance states, FIG.
  • the location of the critical voltage point of the bistable element is such that it is in the range between 2 and 7 volts, so that a good voltage regulation is ensured.

Abstract

The invention relates to an organic photodetector with an organic read-out device with a space-saving thin layer construction.

Description

Beschreibungdescription
Organischer Photodetektor in DünnschichtbauweiseThin-film organic photodetector
Die Erfindung betrifft einen Photodetektor auf organischer Basis mit einer Auslesevorrichtung auf organischer Basis in Platzsparender Dünnschichtbauweise .The invention relates to an organic-based photodetector with an organic-based readout device in a space-saving thin-film construction.
Bei Photodetektoren gibt es zwei grundsätzliche Betriebsar- ten, den so genannten Integrationsmodus und den so genannten Einzelelektron-Modus. Im ersteren werden Photonen über eine Zeitperiode gesammelt und gespeichert. Danach, während der „Ausleseperiode" werden die Photonen oder die durch die einzelnen Photonen erzeugten Signale mit Hilfe von Transistoren, insbesondere von Dünnschichttransistoren, ausgelesen.Photodetectors have two basic operating modes, the so-called integration mode and the so-called single-electron mode. In the former, photons are collected and stored over a period of time. Thereafter, during the "readout period", the photons or the signals produced by the individual photons are read out by means of transistors, in particular thin-film transistors.
Im zweiten Modus dem Einzelelektron-Modus, werden die einzel¬ nen Photonen direkt in einzelne elektrische Signale gewan¬ delt, die dann gemessen werden können.In the second mode to the single-electron mode, the single ¬ NEN photons are punched directly into individual electrical signals Gewan ¬ which can then be measured.
Der Integrations-Modus wird sowohl im medizinischen Bereich (z.B. bei Detektorelementen in Röntgengeräten) als auch für herkömmlich optische Photodetektoren eingesetzt.The integration mode is used in the medical field (e.g., in detector elements in X-ray machines) as well as in conventional optical photodetectors.
Der Stand der Technik dieser Geräte umfasst in der Regel ei¬ nen Detektor, der über eine, in der Regel pixelierte photoaktive Schicht über eine Zeitperiode die Anzahl an aufgenomme¬ nen Photonen sammelt und speichert. Zum Auslesen der gespei¬ cherten Information hat der Detektor eine Auslesevorrichtung, die für jedes Detektorpixel einen Schalter umfasst, durch den das jeweilige Pixel der photoaktiven Schicht auf die Auslese¬ periode umschaltbar ist. Im einfachsten Fall ist dieser Schalter als eine zweite, entgegen gesetzte Diode ausgelegt (man nennt die auch passive Matrix Anordnung mit zwei Zeilen pro Pixel) . Bessere „Performance" erzielt man über den Ein¬ satz von Thin Film Transistors (TFT) als Schalter, die jeweils einen Pixel schalten. Nachteilig an dieser Technik ist vor allem der hohe Kosten- und Platzaufwand der aufgewendet werden muss, um hinter jedes Pixel 3 TFT-Transistoren anzuordnen.The prior art of these devices typically comprises egg ¬ NEN detector over one pixelated usually photoactive layer over a time period collects the number of photons and stores NEN-housed ¬. To read out the vomit ¬ cherten information has the detector read-out apparatus which comprises a switch for each detector pixel, the period by which the respective pixels of the photoactive layer to the readout ¬ is switchable. In the simplest case, this switch is designed as a second, opposite diode (it is called the passive matrix arrangement with two lines per pixel). Better "performance" is achieved via the A ¬ set of thin film transistor (TFT) as a switch, each switch a pixel. A disadvantage of this technique is mainly the high cost and space required to be spent in order to arrange 3 TFT transistors behind each pixel.
Aufgabe der vorliegenden Erfindung ist es deshalb, einen organischen Photodetektor im Integrations-Modus zu schaffen, der einen einfachen und kostengünstigen Schalter hat, welcher in derselben Dünnschichttechnologie wie der eigentliche De¬ tektor gefertigt ist.Object of the present invention is therefore to provide an organic photodetector in the integration mode, which has a simple and inexpensive switch, which is made in the same thin-film technology as the actual De ¬ detector.
Gegenstand der Erfindung ist ein organischer Photodetektor mit Auslesevorrichtung, zumindest folgenden Schichtaufbau re¬ alisierend: auf einer Trägerschicht eine bevorzugt transparente oder se- mitransparente erste leitfähige Schicht, darauf zumindest ei¬ ne organische photoaktive Schicht, im Anschluss daran zumin¬ dest eine zweite leitfähige Schicht, darauf ein organisches bistabiles Element und darauf die dritte leitfähige Schicht.The invention relates to an organic photo-detector with readout device, at least the following layer structure re ¬ alisierend: on a carrier layer is a preferably transparent or se- miter-transparent first conductive layer thereon at least ei ¬ ne organic photoactive layer, subsequently at ¬ least a second conductive layer , an organic bistable element thereon and thereon the third conductive layer.
Ein bistabiles Element nach der Erfindung ist beispielsweise in der Veröffentlichung von Liping Ma, Jie Liu, Seungmoon Pyo and Yang Yang in Applied Physics Letters, Volume 80, Number 3 January 21, 2002, beschrieben. Dort wird gezeigt, dass eine organische Verbindung, beispielsweise 2-amino-4, 5-imidazole- dicarbonitrile (AIDCN) in Sandwichstruktur mit einer mittig angeordneten metallischen Schicht, beispielsweise Aluminium, als Schalter einsetzbar ist, weil der Verbund aus den genannten drei Schichten im Grundzustand zunächst einen sehr hohen Widerstand hat. Legt man nun eine Spannung von typischerweise etwa 3V über das bistabile Element an, so reduziert sich des¬ sen Widerstand um mehrere Größenordnungen. Dieser Zustand bleibt selbst bei ausgeschalteter Spannung über beliebige Zeitspannen erhalten. Durch kurzzeitiges Anlegen einer negativen Spannung kann der Widerstand des Elements schließlich wieder auf sein ursprüngliches (hohes) Niveau gebracht wer¬ den. Ein solches Element lässt sich daher zwischen zwei sta¬ bilen Zuständen hin- und herschalten. Ein weiterer Vorteil der genannten bistabilen Schalter ist deren extrem kurze Schaltzeit im Bereich von 1-lOns.A bistable element according to the invention is described, for example, in the publication by Liping Ma, Jie Liu, Seungmoon Pyo and Yang Yang in Applied Physics Letters, Volume 80, Number 3 January 21, 2002. There, it is shown that an organic compound, for example 2-amino-4,5-imidazolene dicarbonitrile (AIDCN) in a sandwich structure with a centrally arranged metallic layer, for example aluminum, can be used as a switch because the composite of the three layers mentioned in US Pat Ground state initially has a very high resistance. Is now a voltage of typically about 3 V over the bistable element applies, then the sen ¬ resistance reduced by several orders of magnitude. This state is maintained even when the voltage is off for any length of time. By briefly applying a negative voltage, the resistance of the element can eventually return to its original (high) level brought ¬ the. Therefore, such an element can be between two sta ¬ bilen states back and forth. Another advantage of the aforementioned bistable switches is their extremely short switching time in the range of 1-lOns.
Im Anschluss an die Schalter folgt eine Auslesevorrichtung, die aus Standardbauelementen, wie sie bereits beispielsweise in der CCD-Technologie verwendet werden, aufgebaut werden kann und die einerseits die Steuerung der Schalter (d.h. die über das bistabile Element anzulegende Spannung) und anderer¬ seits die Weitergabe bzw. Verarbeitung der ausgelesenen Sig- nale übernimmtAfter the switch is followed by a read-out device which can be constructed of standard components, such as are already used, for example, in the CCD technology and on the one hand the control of the switch (that is to be applied on the bistable element voltage) and on the other ¬ hand the Transfer or processing of the read-out signals
In einem organischen Photodetektor gemäß der Erfindung wird daher vorgeschlagen, für den Integrations-Modus auf der Rückseite des Detektors anstelle der bisher üblichen Transistoren als Schalter für den Übergang von der Integrationsperiode in die Ausleseperiode ein bistabiles Element anzubringen.In an organic photodetector according to the invention it is therefore proposed to install a bistable element for the integration mode on the rear side of the detector instead of the conventional transistors as a switch for the transition from the integration period to the readout period.
Nach einer bevorzugten Aus führungsform wird das bistabile Element nicht für jedes auszulesende Pixel einzeln angebracht sondern großflächig für alle Pixel in Form einer - zumindest 3-lagigen - Schicht. Hierbei müssen die Zuleitungen gemäß der Pixelstruktur der photoaktiven Schicht strukturiert werden.According to a preferred embodiment, the bistable element is not attached individually for each pixel to be read out, but over a large area for all pixels in the form of a layer - at least 3-ply. In this case, the leads must be structured in accordance with the pixel structure of the photoactive layer.
Alternativ kann die bistabile Schicht selbst in einem zweiten Schritt gemäß der Pixelstruktur der darunter liegenden photoaktiven Schicht strukturiert werden, um für jedes Pixel einen eigenen Schalter herzustellen.Alternatively, in a second step, the bistable layer itself may be patterned according to the pixel structure of the underlying photoactive layer to make its own switch for each pixel.
Im Folgenden wird die Erfindung noch anhand einer schemati- sehen Zeichnung, die eine Ausführungsform des Photodetektors zeigt, näher erläutert:In the following the invention will be explained in more detail with reference to a schematic drawing, which shows an embodiment of the photodetector:
Von unten nach oben zeigt sich folgende Schichtabfolge: Zu unters und die Dicke des Gesamtsystems in der Regel be- stimmend findet sich das Substrat oder die Trägerschicht 1.From bottom to top, the following sequence of layers is shown: The substrate or the carrier layer 1 can usually be found under the thickness of the overall system.
Darauf liegt die erste Elektrodenschicht 2, in der Regel eine transparente oder zumindest eine semitransparente Schicht, beispielsweise Ito (Indium Tin Oxide) . Darauf folgt die zu- mindest eine photoaktive organische Schicht 3 (es können meh¬ rere organische Schichten bzw. Mischsysteme vorliegen, die ein photoaktives System an der Stelle bilden) . Die darüber liegende Schicht ist wieder eine leitfähige Schicht, die zweite Elektrodenschicht 4. Die nächst höhere Schicht ist die erste organische Schicht 5 des bistabilen Elements 9, die me¬ tallische Schicht 6, die in Sandwichstruktur von den beiden organischen Schichten 5 und 7 des bistabilen Elements umfasst wird, darauf die zweite organische Schicht des bistabilen Elements 7 und den Abschluss bildet die leitfähige Schicht 8, die, je nach Schaltung, die Gegenelektrode zu der Elektrodenschicht 4 (zum Schalten des Elements) und 2 (zum Auslesen der gespeicherten Ladungsträger) bildet.On top of this lies the first electrode layer 2, generally a transparent or at least one semitransparent layer, for example Ito (indium tin oxide). This is followed by the least a photoactive organic layer 3 (there may be meh ¬ eral organic layers or mixed systems, which form a photoactive system at the site). The overlying layer is again a conductive layer, the second electrode layer 4. The next higher layer is the first organic layer 5 of the bistable element 9, the me ¬ tallische layer 6, in sandwich structure of the two organic layers 5 and 7 of the bistable The second organic layer of the bistable element 7 and the termination forms the conductive layer 8 which, depending on the circuit, forms the counter electrode to the electrode layer 4 (for switching the element) and 2 (for reading out the stored charge carriers) ,
Das bistabile Element kann eine beliebige Anzahl organischer Schichten mit einer beliebigen Anzahl metallischer Mittelschicht umfassen, solange es im Verbund die wesentliche Ei¬ genschaft eines bistabilen Schalters, insbesondere die Stabi¬ lität in zwei unterschiedlichen Widerstands-Zuständen, zeigt. Bevorzugt ist die Lage des kritischen Spannungspunktes des bistabilen Elements so, dass es im Bereich zwischen 2 und 7 Volt liegt, damit eine gute Spannungsregelung gewährleistet ist.The bistable element may comprise any number of organic layers with any number of metallic layer as long as it in combination the essential egg ¬ genschaft of a bistable switch, in particular the stability ¬ formality in two different resistance states, FIG. Preferably, the location of the critical voltage point of the bistable element is such that it is in the range between 2 and 7 volts, so that a good voltage regulation is ensured.
Durch die Erfindung ist es möglich, einen Photodetektor inBy the invention it is possible to use a photodetector in
Flachbauweise in voll organischer Elektronik zur Verfügung zu stellen, weil hier ein organischer Photodetektor mit einem organischen Schalter so Platz und Kosten sparend kombiniert wird. Flat construction in fully organic electronics to make available, because here an organic photodetector with an organic switch so space and cost-saving combined.

Claims

Patentansprüche claims
1. Organischer Photodetektor mit Auslesevorrichtung, zumindest folgenden Schichtaufbau realisierend: auf einer Trägerschicht eine bevorzugt transparente oder se¬ mitransparente erste leitfähige Schicht, darauf zumindest ei¬ ne organische photoaktive Schicht, im Anschluss daran zumin¬ dest eine zweite leitfähige Schicht, darauf ein organisches bistabiles Element und darauf die dritte leitfähige Schicht.1. Organic photodetector readout device, at least the following layer structure realizing: on a carrier layer is a preferably transparent or se ¬ miter-transparent first conductive layer thereon at least ei ¬ ne organic photoactive layer, subsequently at ¬ least one second conductive layer having thereon an organic bistable Element and on the third conductive layer.
2. Organischer Photodetektor mit Auslesevorrichtung nach Anspruch 1, wobei das bistabile organische Element drei Schich¬ ten, zwei äußere, organische Schichten und eine mittlere me¬ tallische Schicht, umfasst.2. Organic photodetector with readout device according to claim 1, wherein the bistable organic element three Schich ¬ th, two outer, organic layers and a middle me ¬ tallische layer comprises.
3. Organischer Photodetektor nach einem der vorstehenden Ansprüche 1 oder 2, wobei der Photodetektor pixeliert und das bistabile Element der Auslesevorrichtung großflächig aufgetragen ist.3. Organic photodetector according to one of the preceding claims 1 or 2, wherein the photodetector pixelated and the bistable element of the read-out device is applied over a large area.
4. Organischer Photodetektor nach einem der vorstehenden Ansprüche 1 oder 2, wobei sowohl der Photodetektor als auch das bistabile Element pixeliert aufgebaut ist.4. Organic photodetector according to one of the preceding claims 1 or 2, wherein both the photodetector and the bistable element is constructed pixelated.
5. Organischer Photodetektor nach einem der vorstehenden Ansprüche, wobei das bistabile Element als Schalter für die Auslesevorrichtung des Photodetektors einsetzbar ist. 5. Organic photodetector according to one of the preceding claims, wherein the bistable element can be used as a switch for the readout device of the photodetector.
PCT/EP2006/062300 2005-05-23 2006-05-15 Organic photodetector with a thin layer construction WO2006125730A1 (en)

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