WO2006120883A1 - 薄膜キャパシタの製造方法 - Google Patents
薄膜キャパシタの製造方法 Download PDFInfo
- Publication number
- WO2006120883A1 WO2006120883A1 PCT/JP2006/308563 JP2006308563W WO2006120883A1 WO 2006120883 A1 WO2006120883 A1 WO 2006120883A1 JP 2006308563 W JP2006308563 W JP 2006308563W WO 2006120883 A1 WO2006120883 A1 WO 2006120883A1
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- WO
- WIPO (PCT)
- Prior art keywords
- firing
- green sheet
- thin film
- film capacitor
- conductor
- Prior art date
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- 239000003990 capacitor Substances 0.000 title claims abstract description 95
- 239000010409 thin film Substances 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000010304 firing Methods 0.000 claims abstract description 141
- 239000012298 atmosphere Substances 0.000 claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000001301 oxygen Substances 0.000 claims abstract description 22
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 19
- 239000004020 conductor Substances 0.000 claims description 92
- 229910010272 inorganic material Inorganic materials 0.000 claims description 13
- 239000011147 inorganic material Substances 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 6
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910052809 inorganic oxide Inorganic materials 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 13
- 239000002002 slurry Substances 0.000 description 12
- 239000011230 binding agent Substances 0.000 description 11
- 230000007935 neutral effect Effects 0.000 description 11
- 238000002156 mixing Methods 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 9
- 238000005245 sintering Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000007606 doctor blade method Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 238000006479 redox reaction Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
Definitions
- Patent Document 1 discloses a thin film capacitor including a metal foil body, an inorganic dielectric thin film formed on the metal foil body, and a metal body formed on the inorganic dielectric thin film. Proposed.
- a dielectric thin film and a metal body can be sequentially formed on a metal foil body by using a vacuum process such as RF magnetron sputtering or vacuum deposition.
- Thin film capacitors can be made smaller and thinner without the need to provide a substrate for film formation such as a Si substrate.
- Patent Document 2 an alumina green sheet is exemplified as a dummy green sheet having a sintering temperature higher than that of the green sheet.
- Patent Document 1 Japanese Patent Laid-Open No. 8-78283
- Patent Document 2 JP-A-9-249460
- this vacuum process has a high process cost and a high material cost for the metal foil, which may lead to an increase in manufacturing cost.
- the dielectric layer may be damaged by a polishing process or the like, and the conductor layers may be electrically short-circuited.
- the damage to the dielectric layer due to the polishing process becomes more significant as the thickness of the dielectric layer becomes thinner. For this reason, if the thickness of the thin film capacitor is reduced, a large obstacle is caused in the large capacity.
- the present invention has been made in view of such circumstances, and a thin film capacitor capable of producing a thin film capacitor at a low cost and without adversely affecting the dielectric layer with high efficiency. It is an object of the present invention to provide a method for manufacturing a device.
- a method of manufacturing a thin film capacitor according to the present invention is a method of manufacturing a thin film capacitor having a dielectric layer and conductor layers respectively formed on both main surfaces of the dielectric layer.
- the conductive green sheets are arranged on both main surfaces of the dielectric green sheet to form a capacitor portion, and the capacitor portion is held by the firing auxiliary green sheet.
- the adhesive strength at the interface between the conductor dry sheet and the firing auxiliary green sheet is reduced, and the oxygen partial pressure of the firing atmosphere is changed at least once.
- the thin film capacitor and the firing auxiliary member, which is a sintered body of the firing auxiliary green sheet, are separated from each other.
- “separate the thin film capacitor and the firing assisting member” includes not only the case where the conductor layer of the thin film capacitor and the firing assisting member are completely separated, but also a jig, etc. This includes the case where it can be evaluated that it is substantially separated, that is, it is very weak and comes into contact with a binding force, that is, it can be separated very easily with a light touch.
- changing the oxygen partial pressure at least once means that in the reducing atmosphere or in the neutral atmosphere based on the equilibrium oxygen partial pressure in the oxidation-reduction reaction of the metal that is the main component of the internal electrode.
- the method for producing a thin film capacitor of the present invention is characterized in that the metal powder is any one of Ni and an alloy containing Ni as a main component.
- the firing auxiliary green sheet is formed in a frame shape, and the firing auxiliary green sheet is in contact with the outer periphery of the conductor green sheet. Or arranged close to the outer periphery.
- the oxide inorganic material powder includes:
- the thin film capacitor manufacturing method of the present invention is characterized in that the total thickness of the dielectric layer and the conductor layer is 100 ⁇ m or less.
- a green sheet manufacturing step of manufacturing a dielectric green sheet, a conductor green sheet, and a firing auxiliary green sheet Laminate formation step of forming a capacitor body by arranging conductor green sheets and forming a laminate by arranging the firing auxiliary green sheet so that the capacitor part is held by the firing auxiliary green sheet And a firing step of firing the laminate, and during the firing treatment in the firing step, the adhesive strength at the interface between the conductor green sheet and the firing auxiliary green sheet is reduced, and the firing atmosphere
- the oxygen partial pressure of the capacitor is changed at least once, so that the thin film capacitor as a sintered body of the capacitor portion and the firing auxiliary green Since the separation of the sintered formed auxiliary member is a sintered body of the sheet, it is possible to prevent the warpage and undulation in the thin film capacitor comprising a sintered body of the capacitor section caused by the firing assistant green sheet.
- the metal powder is Ni or an alloy containing Ni as a main component, and is relatively inexpensive and has a high melting point Ni (melting point: 1455 ° C) as a main conductive component. is doing. Therefore, it is possible to withstand a firing temperature of 1000 ° C. or higher, and it is possible to obtain a thin film capacitor having a high dielectric constant dielectric layer.
- the firing auxiliary green sheet is formed in a frame shape, and the firing auxiliary green sheet is in contact with or close to the outer periphery of the conductor green sheet.
- the oxide inorganic material is Al 2 O powder
- the Al 2 O powder is relatively inexpensive.
- the total thickness of the dielectric layer and the conductor layer is 100 ⁇ m or less, a desired thin film capacitor can be produced with high efficiency without adversely affecting the dielectric layer at low cost. Can be manufactured.
- FIG. 1 is a cross-sectional view schematically showing one embodiment of a thin film capacitor manufactured by a manufacturing method of the present invention.
- FIG. 2 is a process diagram showing an embodiment of a method for manufacturing a thin film capacitor according to the present invention.
- FIG. 3 is a cross-sectional view of a laminate for explaining an embodiment of a laminate formation process.
- FIG. 4 is a cross-sectional view for explaining an embodiment of a firing step.
- FIG. 5 is a plan view of an essential part of a second embodiment of the method for manufacturing a thin film capacitor according to the present invention.
- FIG. 6 is a cross-sectional view taken along the line AA in FIG.
- FIG. 1 is a cross-sectional view schematically showing one embodiment of a thin film capacitor manufactured by the manufacturing method of the present invention.
- the thin film capacitor 30 is made of a dielectric ceramic material as a main component.
- Conductive layers 32a and 32b are formed on both main surfaces of the dielectric layer 31 to be formed. That is, the dielectric layer 31 is sandwiched between a pair of upper and lower conductor layers 32a and 32b, and the total thickness of these layers, that is, the total thickness of the thin film capacitor 30 is formed to be 100 m or less.
- FIG. 2 is a manufacturing process diagram showing one embodiment (first embodiment) of a method for manufacturing a thin film capacitor according to the present invention.
- a dielectric green sheet, a conductor green sheet, and a firing-assisting green sheet are produced.
- a dielectric ceramic powder is prepared by mixing and dispersing a dielectric ceramic powder and an organic binder such as polybutyral resin in an organic solvent such as toluene or ethanol.
- a dielectric ceramic slurry is formed using a blade method or the like to produce a dielectric green sheet having a thickness of 0.5 to L0 m.
- the dielectric ceramic powder it is preferable to use a ferroelectric material that provides a high dielectric constant as the dielectric layer, but a paraelectric material may also be used.
- a metal slurry having an average particle size of 0.2 to 1.5 m and an organic binder such as polybutyl butyral resin are mixed and dispersed in an organic solvent such as toluene or ethanol to prepare a conductor slurry.
- the conductor ceramic slurry is formed using a doctor blade method or the like to produce a conductor green sheet with a film thickness of 1.0 to LO / zm.
- the oxidation-reduction reaction of the metal constituting the conductor layer It is considered that the conductor green sheet (conductive layer) and the firing auxiliary green sheet (firing assisting member) can be separated by utilizing the above. Therefore, as the metal powder material, metals that can be oxidized and reduced by heat treatment, such as Ni and Cu, and alloys containing these as main components can be used.
- an alloy containing M or Ni as a main component must withstand a firing process at 1000 ° C or higher, which is a desirable firing temperature in order to obtain a high dielectric constant dielectric layer where the melting point of Ni is as high as 1455 ° C. It can be used with preference because of its relatively low power and price. It should be noted that a metal that is difficult to oxidize even after firing, such as Au, is considered preferable.
- a conductor slurry is prepared by mixing and dispersing an organic binder such as an acidic inorganic material and polybutyl propylar resin in an organic solvent such as toluene or ethanol, and then a doctor blade method or the like.
- an organic binder such as an acidic inorganic material and polybutyl propylar resin
- an organic solvent such as toluene or ethanol
- a green sheet for firing assistance is prepared.
- the film thickness of the firing auxiliary green sheet is not particularly limited as long as it does not cause the thin film capacitor to be warped or swelled by the firing process, but considering the production cost and the like, it is 25 to 500. ⁇ m is preferred! / ⁇ .
- the oxide layer can be used preferably without sintering at the sintering temperature of the dielectric layer, and Al 2 O, ZrO, CeO, ZnO, etc. are used. be able to. And
- additives such as an antifoaming agent and a plasticizer as needed in the production process of each green sheet.
- the process proceeds to the laminate forming step 12.
- a firing auxiliary green sheet 20a, a conductor green sheet 2a, a dielectric green sheet 1, a conductor green sheet 2b, and a firing aid The green sheets 20b are sequentially laminated and subjected to pressure treatment at a predetermined temperature for a predetermined time so as to be bonded, whereby the stacked body 50 is manufactured.
- the capacitor part 10 is formed in which both main surfaces of the dielectric green sheet 1 are sandwiched between the conductor green sheets 2a and 2b, and the multilayer body 50 has the upper and lower surfaces of the capacitor part 10 formed of the firing auxiliary green sheet 20a, It is in the form retained by 20b.
- the laminate 50 is heat treated at a temperature of 250 to 400 ° C for a predetermined time in a nitrogen atmosphere to perform a binder removal treatment.
- the firing assisting drain sheets 20a, 20b can be easily separated from the conductor layers 32a and 32b, which are the sintered bodies of the conductor green sheets 2a and 2b, and thus the sintering auxiliary members 21a and 21b.
- a thin film capacitor that eliminates the need for mechanical processing such as polishing to remove the capacitor from the thin film capacitor 10 and that does not cause electrical short circuit between the conductor layers 32a and 32b without damaging the dielectric layer 31. Can be obtained. Also, since the capacitor part 10 is held by the firing auxiliary green sheets 20a and 20b, warping and undulation can be suppressed in the thin film capacitor 30 after firing.
- the dielectric layer 31 can be formed thin. That is, since the capacitance of the thin film capacitor 30 is inversely proportional to the thickness of the dielectric layer 31, the thickness of the dielectric layer 31 is preferably 10 m or less in order to obtain a large capacitance. Since the mechanical force such as polishing is not necessary, the thickness of the dielectric layer 31 can be 1 ⁇ m or less.
- FIG. 5 is a plan view showing the main part of the second embodiment of the method for manufacturing a thin film capacitor according to the present invention
- FIG. 6 is a cross-sectional view taken along the line AA.
- the green part 22a, 22b for firing support is hollow at the center. It is formed in a frame shape having two.
- the firing auxiliary green sheets 22a and 22b are arranged on the upper surface of the conductor green sheet 2a and the lower surface of the conductor green sheet 2b so as to be in contact with the outer periphery of the conductor green sheets 2a and 2b.
- the laminated body 51 is formed with the capacitor portion 10!
- the firing auxiliary green sheets 22a, 22b are arranged so that the outer peripheries of the firing auxiliary green sheets 22a, 22b completely coincide with the outer peripheries of the conductor green sheets 2a, 2b. Since the outer periphery of the firing auxiliary green sheets 22a and 22b does not necessarily completely coincide with the outer periphery of the conductor drain sheets 2a and 2b, warping and undulation of the capacitor unit 10 can be sufficiently suppressed. If so, arrange the firing-supporting green sheets 22a and 22b in a form close to the outer periphery of the conductor green sheet 2.
- the conductor green sheets 2a and 2b are not in contact with the firing auxiliary green sheets 22a and 22b, and the conductor green sheets 2a and 2b are firing auxiliary green sheets 22a and 22b. Since there are a portion that is directly exposed to the firing atmosphere and a portion that is not directly exposed to the portion that is in contact with the firing atmosphere, there may be a difference in the characteristics of the thin film capacitor. In such a case, the portion that is not in contact with the firing auxiliary green sheets 22a and 22b and the portion that is in contact with the firing auxiliary green sheets 22a and 22b are cut by a dicing saw or the like after firing, Even if either one is used as a product Good.
- the oxide inorganic material in the firing auxiliary green sheets 21a, 21b may be changed to the conductor green sheets 2a, 2b and the lead during the firing process. Although it may diffuse into the electrical green sheet 1 and affect the characteristics of the thin film capacitor, in the second embodiment, since the firing auxiliary green sheets 22a and 22b are formed in a frame shape, Conductor green sheets 2a, 2a are in contact with firing auxiliary green sheets 22a, 22b! / In the dark areas, the oxide inorganic material does not diffuse into the conductor green sheets 2a, 2b or the dielectric Darin sheet 1.
- the conductor green sheets 2a, 2a have the desired characteristics by cutting them with a dicing saw or the like so that only the portions where the green sheets 22a, 22b are not in contact with the firing auxiliary green sheets 22a, 22b can be commercialized. It is possible to obtain a thin film capacitor.
- the firing atmosphere is changed from the reducing atmosphere to the neutral atmosphere based on the equilibrium oxygen partial pressure in the oxidation-reduction reaction of the metal powder, but the reducing atmosphere is not limited to this,
- the firing atmosphere can be changed appropriately so that the oxidation state on the surface of the metal powder changes, such as changing in the order of neutral atmosphere, acid atmosphere, reducing atmosphere, neutral atmosphere, and reducing atmosphere. Is also preferable.
- a resin layer may be provided so as to cover at least a part of the conductor layer for the purpose of mechanical reinforcement or improvement of moisture resistance after firing.
- (Ba, Ca) TiO as the main component and a dielectric ceramic powder with an average particle size of 0.2 m -A dielectric ceramic slurry was prepared by mixing and dispersing an organic binder composed mainly of lutipral resin and an organic solvent prepared by mixing toluene and ethanol in a volume ratio of 1: 1.
- the mixing ratio of the dielectric ceramic powder, the organic binder, and the organic solvent was 10:10:80 by volume.
- the volume of the dielectric ceramic powder was calculated by measuring the weight of the dielectric ceramic powder and dividing by the theoretical density.
- a dielectric ceramic slurry was formed into a sheet shape by a doctor blade method to obtain a dielectric green sheet having a thickness of 2 m.
- Ni powder as a metal powder having an average particle size of 0.5 ⁇ m, an organic binder mainly composed of polybutyral resin, toluene and ethanol are mixed at a volume ratio of 1: 1.
- the conductive solvent was mixed and dispersed to prepare a conductor slurry.
- the mixing ratio of Ni powder, organic binder, and organic solvent was 10:10:80 by volume.
- the volume of Ni powder was calculated by measuring the weight of Ni powder and dividing by the theoretical density.
- the conductor slurry was formed into a sheet by the doctor blade method to obtain a 9 m thick conductor green sheet.
- Al O powder having an average particle diameter of 1.0 ⁇ m was prepared as an acidic inorganic material.
- O powder an organic noda based on polyvinyl butyral rosin, toluene and ethanol
- a ceramic slurry for assisting the firing was prepared by mixing and dispersing an organic solvent prepared by mixing 1: 1 with a volume ratio of diol. Mixing ratio of Al O powder, organic binder, and organic solvent is volume
- the ratio was 10:10:80.
- the volume of Al 2 O powder is measured by measuring the weight of Al 2 O powder.
- the firing aid ceramic slurry was formed into a sheet by the doctor blade method to obtain a firing aid green sheet having a thickness of 100 m.
- a green sheet for firing support, a conductor green sheet, a dielectric green sheet, a conductor drain sheet, and a green sheet for firing support are laminated in order, and pressed for 30 seconds at a temperature of 50 ° C and a pressure of 100 MPa. Formed.
- the resulting laminate was heat treated at 280 ° C for 5 hours in a nitrogen atmosphere to remove the binder. I got it.
- an oxygen partial pressure lower than the equilibrium oxygen partial pressure of the Ni powder was set as a reducing atmosphere, and the laminated body was subjected to a firing treatment by holding at a temperature of 1150 ° C. for 2 hours in this reducing atmosphere. Thereafter, the oxygen partial pressure was raised to or near the equilibrium oxygen partial pressure to obtain a neutral atmosphere. In this neutral atmosphere, the firing furnace was cooled to room temperature, and the firing treatment was completed.
- the firing aid green sheet becomes a plate-like firing aid member due to volatilization and disappearance of organic substances such as organic noda and organic solvent, and the firing aid member does not require mechanical processing and is a thin film capacitor.
- a thin film capacitor with a conductor layer formed on both principal surfaces of the dielectric layer was obtained.
- the obtained thin film capacitor had a total thickness of 13 m, and when the amount of shrinkage in the in-plane direction was measured with an optical length measuring instrument, it was found to be 1% or less and no warpage or undulation occurred. It was. Further, when the surface roughness Ra of the conductor layer was measured with an atomic force microscope, it was about 200 nm, and it was confirmed that sufficient smoothness was obtained. Furthermore, when the in-plane distribution of dielectric constant was measured with an LCR meter, it was confirmed that it was suppressed to 3% or less.
- the obtained sintered body has a thin film carrier made of Al 2 O contained in the green sheet for firing assistance.
- the Al 2 O was removed by polishing, but the dielectric layer was damaged and the conductor layer of the thin film capacitor
- the oxygen partial pressure was not changed during the firing step, and the firing treatment was performed in a reducing atmosphere where the oxygen partial pressure was substantially constant, so that the interface between the conductor green sheet and the firing auxiliary green sheet was sufficient. Therefore, it is considered that the capacitor part and the firing auxiliary part could not be separated from each other.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006800163750A CN101176171B (zh) | 2005-05-10 | 2006-04-24 | 薄膜电容器的制造方法 |
JP2007528208A JP4441921B2 (ja) | 2005-05-10 | 2006-04-24 | 薄膜キャパシタの製造方法 |
US11/928,287 US7771552B2 (en) | 2005-05-10 | 2007-10-30 | Method for manufacturing thin film capacitor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005137187 | 2005-05-10 | ||
JP2005-137187 | 2005-05-10 | ||
JP2005206942 | 2005-07-15 | ||
JP2005-206942 | 2005-07-15 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/928,287 Continuation US7771552B2 (en) | 2005-05-10 | 2007-10-30 | Method for manufacturing thin film capacitor |
Publications (1)
Publication Number | Publication Date |
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WO2006120883A1 true WO2006120883A1 (ja) | 2006-11-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2006/308563 WO2006120883A1 (ja) | 2005-05-10 | 2006-04-24 | 薄膜キャパシタの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7771552B2 (ja) |
JP (1) | JP4441921B2 (ja) |
KR (2) | KR100944101B1 (ja) |
CN (1) | CN101176171B (ja) |
WO (1) | WO2006120883A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2008075504A1 (ja) * | 2006-12-19 | 2008-06-26 | Murata Manufacturing Co., Ltd. | 薄層コンデンサの製造方法、薄層コンデンサおよびコンデンサ内蔵配線基板の製造方法 |
JP2008211054A (ja) * | 2007-02-27 | 2008-09-11 | Tdk Corp | 積層型圧電素子 |
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JPWO2007010768A1 (ja) * | 2005-07-15 | 2009-01-29 | 株式会社村田製作所 | コンデンサおよびその製造方法 |
US8034666B2 (en) * | 2009-11-15 | 2011-10-11 | Microsemi Corporation | Multi-layer thick-film RF package |
CN102906891A (zh) * | 2010-05-26 | 2013-01-30 | 日本碍子株式会社 | 压电元件的制造方法 |
US9779874B2 (en) * | 2011-07-08 | 2017-10-03 | Kemet Electronics Corporation | Sintering of high temperature conductive and resistive pastes onto temperature sensitive and atmospheric sensitive materials |
KR101444616B1 (ko) * | 2013-08-14 | 2014-09-26 | 삼성전기주식회사 | 적층 세라믹 커패시터, 그 제조 방법 및 적층 세라믹 커패시터용 압착 플레이트 |
US9809720B2 (en) * | 2015-07-06 | 2017-11-07 | University Of Massachusetts | Ferroelectric nanocomposite based dielectric inks for reconfigurable RF and microwave applications |
CN105006362B (zh) * | 2015-07-28 | 2018-06-19 | 桂林电子科技大学 | 一种可剥离衬底的薄膜电容器制备方法 |
CN105355431A (zh) * | 2015-11-30 | 2016-02-24 | 淮安盛宇电子有限公司 | 一种薄膜电容器的制造方法 |
JP2018137311A (ja) * | 2017-02-21 | 2018-08-30 | Tdk株式会社 | 薄膜キャパシタ |
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- 2006-04-24 KR KR1020097019187A patent/KR100944101B1/ko not_active IP Right Cessation
- 2006-04-24 WO PCT/JP2006/308563 patent/WO2006120883A1/ja active Application Filing
- 2006-04-24 KR KR1020077026026A patent/KR100925656B1/ko not_active IP Right Cessation
- 2006-04-24 CN CN2006800163750A patent/CN101176171B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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KR100944101B1 (ko) | 2010-02-24 |
JP4441921B2 (ja) | 2010-03-31 |
KR20080002944A (ko) | 2008-01-04 |
US7771552B2 (en) | 2010-08-10 |
CN101176171B (zh) | 2011-03-16 |
CN101176171A (zh) | 2008-05-07 |
JPWO2006120883A1 (ja) | 2008-12-18 |
US20080060743A1 (en) | 2008-03-13 |
KR20090101515A (ko) | 2009-09-28 |
KR100925656B1 (ko) | 2009-11-09 |
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