WO2006093176A1 - Dispositif électroluminescent organique, affichage d’image et dispositif d’éclairage - Google Patents

Dispositif électroluminescent organique, affichage d’image et dispositif d’éclairage Download PDF

Info

Publication number
WO2006093176A1
WO2006093176A1 PCT/JP2006/303837 JP2006303837W WO2006093176A1 WO 2006093176 A1 WO2006093176 A1 WO 2006093176A1 JP 2006303837 W JP2006303837 W JP 2006303837W WO 2006093176 A1 WO2006093176 A1 WO 2006093176A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
light
organic
layer
layers
Prior art date
Application number
PCT/JP2006/303837
Other languages
English (en)
Japanese (ja)
Inventor
Aki Nakata
Tomoyuki Nakayama
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to JP2007505976A priority Critical patent/JP4946862B2/ja
Publication of WO2006093176A1 publication Critical patent/WO2006093176A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom

Definitions

  • the present invention relates to an organic electoluminescence device, an image display device including the organic electroluminescence device, and an illumination device.
  • organic EL elements are self-luminous, they have excellent visibility and can be driven at a low voltage of several volts to several tens of volts, so that light weight including a drive circuit is possible. Therefore, organic EL devices are expected to be used as thin film displays, lighting, and knock lights.
  • Organic EL elements are also characterized by abundant color nomination. Another characteristic is that various colors can be emitted by combining colors.
  • the need for white light emission is particularly high, and it can also be used as a backlight for displays. Furthermore, it can be divided into blue, green and red pixels using a color filter.
  • One light emitting layer is doped with a plurality of light emitting compounds.
  • a plurality of emission colors are combined from a plurality of emission layers.
  • Such an organic EL element that emits white light is formed by stacking two layers of a blue light-emitting layer that emits short wavelength light and a yellow light-emitting layer that emits long wavelength light. Proposals have been made to obtain color emission (for example, see Patent Document 1). O
  • a high-efficiency organic electoluminescence element can be obtained by using an ortho metal complex as a light-emitting material, and as a method for obtaining white light, there is a method of obtaining white color by stacking three colors of BGR. (For example, refer to Patent Document 2.) 0
  • a white light emitting element that achieves white color by combining a plurality of light emitting layers has a structure in which a number of light emitting layers are stacked, so that the thickness of the light emitting layer is increased, and the number of interfaces between layers is also increased.
  • carrier injection is hindered and the drive voltage is increased.
  • the driving voltage was higher than that of a fluorescent material.
  • the drive voltage can be lowered by making the light emitting layer thinner, but by reducing the overall film thickness, the device is more susceptible to the effects of minute dust on the substrate and the performance of the device is not stable. There was a problem that the sex became worse.
  • Patent Document 1 Japanese Patent Laid-Open No. 2003-347051
  • Patent Document 2 Japanese Patent Laid-Open No. 2001-319780
  • Patent Document 3 JP 2004-63349 A
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide an organic electoluminescence element having high luminous efficiency and low productivity at a low driving voltage, and the organic electoduct.
  • An object of the present invention is to provide an image display device and a lighting device having a luminescence element.
  • the light emitting unit includes two light emitting layers having different emission peaks.
  • Each of the light emitting layers contains a light emitting dopant and a light emitting host,
  • each film An organic electroreductive element characterized in that the relationship between the thicknesses d1, d2, and d3 satisfies both of the following formulas (1) and (2).
  • the light-emitting unit is composed of at least two light-emitting layers having different light emission peaks, and at least two adjacent light-emitting layers of the light-emitting unit contain the same light-emitting host compound.
  • the light-emitting unit is characterized in that the light-emitting unit is composed of at least two light-emitting layers having different emission peaks, and all the light-emitting layers of the light-emitting unit contain the same light-emitting host compound.
  • All the light-emitting layer forces of the light-emitting unit each include two or more light-emitting dopants, and the concentration of the light-emitting dopant varies continuously in the light-emitting unit. 5.
  • the organic electoluminescence device according to any one of 5 above.
  • the thickness of the light emitting layer having the light emission peak at the shortest wavelength is d4, and d2 and d4 satisfy the following formula (6):
  • the light emitting power of the organic electoluminescence device is white.
  • an organic electroluminescent device having high luminous efficiency at a low driving voltage and high productivity, and an image display device and an illuminating device having the organic electroluminescent device. I was able to.
  • FIG. 1 is a diagram showing an example of a basic layer configuration of the present invention.
  • FIG. 2 is a schematic view showing an example of a vapor deposition apparatus having a plurality of light emitting host compounds and a plurality of light emitting dopant deposition boats.
  • FIG. 3 is a diagram showing a light-emitting unit having a mixed region of two types of light-emitting dopants at a joint portion between two adjacent light-emitting layers in Example 3.
  • FIG. 4 is a view showing a light emitting unit in which all layers of the light emitting unit in Example 4 each contain two or more types of light emitting dopants, and the content ratio is continuously changed.
  • FIG. 5 is a schematic view showing an example of a display device constituted by an organic EL element cover.
  • FIG. 6 is a schematic diagram of a display unit.
  • FIG. 7 is a schematic diagram of a pixel.
  • FIG. 8 is a schematic view showing an example of a passive matrix type full-color display device. Explanation of symbols
  • the organic electoluminescence device of the present invention (hereinafter also referred to as an organic EL device) has at least an anode, a cathode, and an organic layer including a light emitting unit between the anode and the cathode on a supporting substrate,
  • the unit has two or more light-emitting layers having different light emission peaks, all of the light-emitting layers contain a light-emitting dopant and a light-emitting host, the total thickness of the organic layer between the anode and the light-emitting unit is dl, and the light-emitting unit Is d2 and the total thickness of the organic layer between the light emitting unit and the cathode is d3, the thickness (d2) of the light emitting unit is 5 nm or more and less than 30 nm, preferably 7 to 27 nm. The most preferable range is 10 to 25 nm.
  • the thickness (dl + d3) of the organic layer excluding the light emitting unit is five times or more the film thickness (d2) of the light emitting unit.
  • the device configuration shown in FIG. 1 has a light emitting unit between a cathode and an anode, and the light emitting unit is sandwiched between an electron blocking layer and a hole blocking layer.
  • the light emitting unit means from the light emitting layer located closest to the cathode side to the light emitting layer located closest to the anode side of the organic electoluminescence device (for example, in FIG. 1, the light emitting layer 2 and the light emitting layer 3 become a light emitting unit).
  • These electron blocking layers or hole blocking layers are not necessarily required. However, by adopting such a configuration, electron and hole carriers are confined in the light emitting unit, and further, by recombination of electrons and holes. Since these excitons can also be confined in the light emitting unit, it is preferable to provide these layers.
  • a known material can be used as a material for forming the electron blocking layer and the hole blocking layer.
  • the material forming the electron blocking layer is preferably smaller in electron affinity than the material forming the light emitting unit.
  • the hole blocking layer confines holes so that holes do not leak from the light emitting unit
  • the material forming the hole blocking layer has an ionization potential higher than the material forming the light emitting unit. Big! /, I like it! / ...
  • the material forming the hole blocking layer and the electron blocking layer is an excited triplet of the phosphorescent compound of the light emitting unit. It ’s bigger than energy!
  • hole transport layer and the electron transport layer known materials can be used, and it is preferable to use a material having high conductivity from the viewpoint of lowering driving voltage.
  • the light emitting unit emits light of at least two layers having different emission peaks. It is composed of layers, preferably 2 or 3 layers.
  • All the light emitting layers of the light emitting unit contain a light emitting host and a light emitting dopant.
  • two adjacent light emitting layers of the light emitting unit are composed of the same light emitting host compound, and that all the light emitting layers are composed of the same light emitting host compound.
  • the adhesion between the layers is improved, the carrier injection barrier between different layers is relaxed, and the driving voltage can be lowered.
  • the same effect can be obtained when a mixed region is provided between the two light emitting layers, or when the concentration of the light emitting dopant is continuously changed in the light emitting unit.
  • a light emitting layer having a different emission peak means that the emission maximum wavelength differs by at least lOnm or more when the emission peak is measured by PL.
  • a vapor deposition film is formed on a quartz substrate with a composition using a light-emitting dopant and a light-emitting host compound in a light-emitting layer, or a wet process such as a polymer is used for spin measurement.
  • the light emission maximum wavelength can be determined by preparing a thin film by coating or dipping and measuring the luminescence of the obtained deposited film or thin film with a fluorometer.
  • the light emitting unit includes two or more light emitting layers having different light emission peaks. Between the light emitting layer and the light emitting layer, a non-light emitting intermediate layer ( Emission dopants are not included! / Both intermediate layers! /, U) are provided! / I also like that! / By providing the intermediate layer, it becomes easier to control the injection of carriers into the light emitting layer, and color shift can be prevented.
  • a non-light emitting intermediate layer Emission dopants are not included! / Both intermediate layers! /, U
  • the intermediate layer contains the same luminescent host compound as the luminescent host compound contained in the adjacent luminescent layer. Is improved and the carrier injection barrier between different layers is relaxed. More preferably, since all the layers of the light emitting unit (light emitting layer and intermediate layer) contain the same host compound, the adhesion between the layers is further improved and the carrier injection barrier between different layers is increased. It is further relaxed.
  • the color when the organic EL of the present invention is lit is not particularly limited, but is preferably white.
  • the light emitting layer is composed of three light emitting layers.
  • the emission color is not limited to white.
  • the layer thickness dl of the organic layer between the anode and the light emitting layer and the layer thickness d3 of the organic layer between the light emitting layer and the cathode satisfy the following ranges.
  • d2 and d4 satisfy the following formula.
  • the mixing ratio of the light-emitting dopant to the light-emitting host compound as the main component in the light-emitting layer is preferably in the range of 0.1% by mass to less than 30% by mass.
  • a phosphorescent compound (phosphorescent dopant) as the light-emitting dopant of at least one layer of the light-emitting layer. It is best to use a phosphorescent compound as the light-emitting dopant for all light-emitting layers where it is more preferable to use a compound.
  • the light emitting dopant may be a metal complex or a phosphorescent dopant having another structure, which may be used by mixing a plurality of kinds of compounds.
  • the light-emitting dopant is roughly classified into two types: a fluorescent dopant that emits fluorescence and a phosphorescent dopant that emits phosphorescence.
  • fluorescent dopants include coumarin dyes, pyran dyes, cyanine dyes, chromochrome dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes. Examples thereof include dyes, pyrylium dyes, perylene dyes, stilbene dyes, polythiophene dyes, and rare earth complex phosphors.
  • the phosphorescent dopant preferably a complex compound containing a metal of Group 8, Group 9, or Group 10 in the periodic table of elements, more preferably an iridium compound or an osmium compound, Of these, iridium compounds are the most preferred.
  • JP 2002-100476 JP 2002-173674, JP 2002-359082, JP 2002-175884, JP 2002-363552, JP 2002-184582 Publication, JP 2003-7469, JP 2002-525 808, JP 2003-7471, JP 2002-525833, JP 2003
  • the luminescent host compound used in the present invention is a compound having a phosphorescence quantum yield of phosphorescence of less than 0.01 at room temperature (25 ° C.).
  • the luminescent host compound used in the present invention is not particularly limited in terms of structure, but representatively, a power rubazole derivative, a triarylamine derivative, an aromatic borane derivative, a nitrogen-containing complex.
  • a ring compound, a thiophene derivative, a furan derivative, an oligoarylene compound or the like having a basic skeleton, or a carboline derivative or diaza force rubazole derivative (Here, diaza force rubazole derivative is a carboline ring of a carboline derivative. Configure
  • the hydrocarbon ring is one in which at least one carbon atom is substituted with a nitrogen atom. ) Etc. are mentioned.
  • carboline derivatives diaza force rubazole derivatives and the like are preferably used.
  • carboline derivatives diaza force rubazole derivatives, force rubazole derivatives and the like are given below, but the present invention is not limited thereto.
  • the light-emitting host compound used in the present invention may be a low-molecular compound or a high-molecular compound having a repeating unit, and may be a low-molecular compound having a polymerizable group such as a vinyl group or an epoxy group (evaporation polymerization light emission). May be a host compound).
  • the light-emitting host compound a compound having a hole transporting ability and an electron transporting ability, which prevents emission light from being increased in wavelength, and has a high Tg (glass transition temperature) is preferable.
  • the hole blocking layer has the function of an electron transport layer, which is a material force that has the function of transporting electrons while transporting holes and is extremely small, and blocks holes while transporting electrons. By doing so, the probability of recombination of electrons and holes can be improved.
  • Examples of the hole blocking layer include, for example, Japanese Patent Application Laid-Open Nos. 11204258 and 11204359, and “The Forefront of Organic EL Devices and Their Industrialization (November 30, 1998, NTT Corporation)
  • the hole blocking (hole blocking) layer described in page 237 of “Issuance”) is applicable as the hole blocking layer according to the present invention.
  • the structure of the electron carrying layer mentioned later can be used as a hole-blocking layer based on this invention as needed.
  • Electron blocking layer >>
  • the electron blocking layer has the function of a hole transport layer in a broad sense, and is a material force that has a function of transporting holes and an extremely small capacity of transporting electrons, and transports holes while transporting holes. The probability of recombination of electrons and holes can be improved by blocking the children.
  • the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed.
  • the thickness of the hole blocking layer and the electron blocking layer according to the present invention is preferably 3 ⁇ ! ⁇ lOOnm, more preferably 5 nm to 30 nm.
  • the hole transport layer includes a material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer.
  • the hole transport layer can be provided as a single layer or a plurality of layers.
  • a hole transport material there is no particular limitation. Conventionally, in a photoconductive material, it is commonly used as a hole charge injection / transport material and used for a hole injection layer or a hole transport layer of an EL element. Any one of known ones used can be selected and used.
  • the hole transport material has a hole injection or transport, electron barrier property! /, Or a deviation, and may be either organic or inorganic.
  • triazole derivatives oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives , Stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
  • the above-mentioned forces that can be used are preferably porphyrin compounds, aromatic tertiary amine compounds, and styrylamine compounds, particularly aromatic tertiary amine compounds. ,.
  • aromatic tertiary amine compounds and styrylamine compounds include N, N, N ', N'-tetraphenyl-1,4'-daminophenol; N, N' —Diphenyl N, N '— Bis (3-methylphenol) 1 [1, 1' — Biphenyl] 1, 4, 4 '— Diamine (TPD); 2, 2 Bis (4 di-p-tolylaminophenol 1, 1-bis (4 di-l-tri-laminophenol) cyclohexane; N, N, N ', N'—tetra-l-tolyl-1,4,4'-diaminobiphenyl; 1 Bis (4 di-p-triaminophenol) 4 Phenol mouth hexane; Bis (4-dimethylamino 2-methylphenol) phenylmethane; Bis (4-di-p-triaminophenol) phenol; N, N ' —Diphenyl N, N '—Di (4
  • No. 5,061,569 having two condensed aromatic rings in the molecule for example, 4, 4 ′ bis [N- (1-na (Futil) N-Feramino] Bi-Fowl (NPD), three triphenylamine units described in JP-A-4 308688 are connected in a starburst type 4, 4 ', A "—Tris [? ⁇ — (3-methylphenol) N phenolamine] triphenylamine (MTD ATA) and the like.
  • a polymer material in which these materials are introduced into a polymer chain or these materials as a polymer main chain can also be used.
  • Inorganic compounds such as p-type Si and p-type SiC can also be used as a hole injection material and a hole transport material. Further, the hole transport material preferably has a high Tg.
  • the hole transport layer is formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, an ink jet method, or an LB method. be able to.
  • the thickness of the hole transport layer is not particularly limited, but is usually 5 ⁇ ! ⁇ 50 OOnm or so.
  • This hole transport layer may have a single-layer structure in which one or more of the above materials are used.
  • An impurity-doped hole transport layer with high p property can also be used. Examples thereof include those described in JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, R. Ap pi. Phys., 95, 5773 (2004), etc. It is done.
  • the electron transport layer is a material force having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer.
  • the electron transport layer can be a single layer or a plurality of layers.
  • the electron transport layer may be any material selected from conventionally known compounds as long as it has a function of transmitting electrons injected from the cathode to the light emitting layer. It is possible to be.
  • electron transport materials examples include: -substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide oxide derivatives, Examples include heterocyclic tetracarboxylic anhydrides such as phthaleneperylene, carbodiimide, fluorenylidenemethane derivatives, anthraquinodimethane and anthrone derivatives, and oxadiazole derivatives.
  • a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, or a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group can also be used as an electron transport material.
  • a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
  • metal complexes of 8 quinolinol derivatives such as tris (8 quinolinol) aluminum (Alq), tris (5,7-dichloro-1-8-quinolinol) aluminum, tris (5,7-jib mouth)
  • Metal complexes replacing Mg, Cu, Ca, Sn, Ga or Pb can also be used as electron transport materials.
  • metal free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material.
  • the distyrylvirazine derivative exemplified as the material for the light emitting layer can also be used as an electron transport material, and, like the hole injection layer and the hole transport layer, n-type-Si, n-type-SiC, etc. These inorganic semiconductors can also be used as electron transport materials.
  • the electron transport layer may be formed by thinning the electron transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, an ink jet method, or an LB method. it can. Although there is no restriction
  • This electron transport layer may have a single-layer structure having one or more of the above materials.
  • an n-type electron transport layer doped with impurities can be used. Examples thereof include those described in JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, R. Ap pi. Phys., 95, 5773 (2004), etc. It is done.
  • Injection layer Electron injection layer, hole injection layer The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer. As described above, the injection layer exists between the anode and the light emitting layer or hole transport layer, and between the cathode and the light emitting layer or electron transport layer. May be present.
  • the injection layer is a layer provided between the electrode and the organic layer in order to reduce the drive voltage and improve the luminance of the light emission.
  • the organic EL element and its industrial front line June 30, 1998) Chapter 2 “Electrode materials” (pages 123-166) of “Part 2” of “Tees Co., Ltd.”) describes the details of the hole injection layer (anode buffer layer) and the electron injection layer (cathode buffer). One layer).
  • anode buffer layer (hole injection layer) The details of the anode buffer layer (hole injection layer) are also described in JP-A-9-45479, JP-A-9260062, JP-A-8-288069 and the like.
  • a phthalocyanine buffer layer typified by phthalocyanine, an oxide buffer layer typified by vanadium oxide, an amorphous carbon buffer layer, a polymer buffer layer using a conductive polymer such as polyarene (emeraldine) or polythiophene Etc.
  • cathode buffer layer (electron injection layer) The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like.
  • a metal buffer layer typified by aluminum or aluminum, an alkali metal compound buffer layer typified by lithium fluoride, an alkaline earth metal compound buffer layer typified by magnesium fluoride, or an acid aluminum salt A single acid buffer.
  • the buffer layer (injection layer) preferably has a very thin film thickness, but the film thickness is preferably in the range of 0.1 nm to 100 nm.
  • This injection layer can be formed by thin-filming the above material by a known method such as a vacuum deposition method, a spin coating method, a casting method, an ink jet method, or an LB method.
  • the thickness of the injection layer is not particularly limited, but is usually about 5 to 5000 nm.
  • This injection layer may have a single-layer structure in which one or more of the above materials are used.
  • an electrode material made of a metal, an alloy, an electrically conductive compound or a mixture thereof having a high work function (4 eV or more) is preferably used. It is done. Specific examples of such electrode materials include metals such as Au, and conductive transparent materials such as Cul, indium tin oxide (ITO), SnO, and ZnO. IDIXO (In O-
  • An amorphous material such as ZnO) that can produce a transparent conductive film may be used.
  • these electrode materials can be formed into a thin film by vapor deposition or sputtering, and a pattern with a desired shape can be formed by a single photolithography method. m or more), a pattern may be formed through a mask having a desired shape when the electrode material is deposited or sputtered.
  • the film thickness depends on the material. Usually ⁇ ! ⁇ 1000 nm, preferably 10 nm to 200 nm.
  • the cathode according to the present invention a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof is used.
  • an electron injecting metal a material having a low work function (4 eV or less) metal
  • an alloy a material having a low work function (4 eV or less) metal
  • an alloy a material having a low work function (4 eV or less) metal
  • an alloy referred to as an electron injecting metal
  • an alloy referred to as an electron injecting metal
  • an alloy an electrically conductive compound
  • a mixture thereof a mixture thereof.
  • electrode materials include sodium, sodium-powered rhodium alloy, magnesium, lithium, magnesium Z copper mixture, magnesium Z silver mixture, magnesium / aluminum mixture, magnesium Z indium mixture, aluminum Z acid aluminum (Al 2 O 3) mixture, indium, lithium
  • Lithium Z aluminum mixture, aluminum and the like are preferred.
  • the cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.
  • the sheet resistance as the cathode is preferably several hundred ⁇ or less.
  • the film thickness is usually selected in the range of 10 nm to 1000 nm, preferably 50 nm to 200 nm. In order to transmit light, if either one of the anode or the cathode of the organic EL element is transparent or translucent, it is convenient to improve the light emission luminance.
  • Substrate also referred to as substrate, substrate, support, etc.
  • the substrate of the organic EL device of the present invention is not particularly limited in the type of glass, plastic and the like, and is not particularly limited as long as it is transparent.
  • the substrate preferably used include glass, Examples thereof include quartz and a light-transmitting resin film.
  • the substrate is a resin film that can give flexibility to organic EL elements
  • Examples of the resin film include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyetherimide, polyetheretherketone, polyphenylenesulfide, polyarylate, polyimide, polycarbonate (PC). , Cellulose triacetate (TAC), cellulose acetate propionate (CAP) and the like.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PES polyethersulfone
  • PES polyetherimide
  • polyetheretherketone polyphenylenesulfide
  • PC polycarbonate
  • TAC Cellulose triacetate
  • CAP cellulose acetate propionate
  • an inorganic film or an organic film, or a hybrid film of both of them may be formed, and the water vapor transmission rate is 0.01 gZm 2 'dayatm or less. I prefer to be there.
  • the external extraction efficiency at room temperature of light emission of the organic electoluminescence device of the present invention is preferably 1% or more, more preferably 2% or more.
  • external extraction quantum efficiency (%) number of photons emitted outside the organic EL element Z number of electrons flowing through the organic EL element X 100.
  • a roughened film (such as an antiglare film) can be used in combination in order to reduce unevenness in light emission.
  • an anode / hole injection layer / hole transport layer As an example of a method for producing the organic EL device of the present invention, an anode / hole injection layer / hole transport layer
  • Z light emitting layer two or more layers
  • Z hole blocking layer Z electron transport layer
  • Z cathode buffer layer A method for producing an organic EL device comprising a Z cathode will be described.
  • a desired electrode material for example, a thin film having a material force for an anode
  • An anode is formed by a method such as vapor deposition or sputtering so as to have a film thickness of ⁇ 200 nm.
  • a thin film containing an organic compound such as a hole injection layer, a hole transport layer, a light emitting layer (two or more layers), a hole blocking layer, and an electron transport layer, which are element materials, is formed thereon.
  • a method of forming a thin film containing this organic compound there are a spin coat method, a cast method, an ink jet method, a vapor deposition method, a printing method, and the like. A homogeneous film can be obtained immediately and a pinhole is generated. From the viewpoint of shiniku! /, Etc., vacuum deposition or spin coating is particularly preferred. Further, a different film forming method may be applied for each layer.
  • the deposition conditions may vary due to kinds of materials used, generally boat temperature 50 ° C ⁇ 450 ° C, vacuum degree of 10- 6 Pa ⁇ 10- 2 Pa, deposition rate 0.01 nm to 50 nm Z seconds, substrate temperature -50. C ⁇ 300. C, film thickness of 0.1 ⁇ to 5; ⁇ ⁇ is preferably selected as appropriate.
  • FIG. 1 A vapor deposition apparatus that can be used in the method for forming an organic EL element of the present invention is shown in FIG.
  • FIG. 2 is a schematic diagram of a vapor deposition apparatus having a plurality of vapor deposition boats for a plurality of light emitting host compounds and a plurality of light emission dopants. By controlling the heating temperature of each boat and the opening / closing of the shutter associated with each boat, a light emitting unit having light emitting layers with different light emission peaks can be formed.
  • an intermediate layer boat is provided, and an intermediate layer that does not include a light emitting dopant is provided between two adjacent light emitting layers of the light emitting unit. It is preferable because of its prevention effect.
  • all of the light emitting layers having different emission peaks contain a light emitting dopant and a light emitting host compound, and two adjacent light emitting layers are made of the same light emitting host compound.
  • all of the light emitting layers having different emission peaks can be composed of the same light emitting host compound, and two kinds of each of the light emitting units at the junction of two adjacent light emitting layers can be formed. It is necessary to have a mixed region of light emitting dopants, and to have an inclined mixed region in which all the layers of the light emitting unit contain two or more kinds of light emitting dopants and the content ratio gradually changes. For example, it is possible to obtain a configuration for various purposes, and to obtain the effect of lowering the driving voltage.
  • a thin film having a cathode material force is formed thereon by a method such as vapor deposition or sputtering so that the film thickness is 1 ⁇ m or less, preferably in the range of 50 nm to 200 nm.
  • a desired organic EL device can be obtained.
  • the organic EL device is manufactured from the hole injection layer to the cathode in a single vacuum. Although it is preferable, even if it is taken out in the middle and subjected to a different film forming method, it does not matter. At that time, it is necessary to consider that the work is performed in a dry inert gas atmosphere.
  • the display device of the present invention will be described.
  • the image display apparatus using the organic EL element of the present invention may be monochromatic or multicolored.
  • a shadow mask is provided for each color light-emitting unit, and three or more light-emitting layers are formed for each color by vapor deposition, casting, spin coating, ink-jet method, printing method, or the like.
  • the method is not limited, but a vapor deposition method, an inkjet method, and a printing method are preferable.
  • a vapor deposition method patterning using a shadow mask is preferred.
  • the vapor deposition method or the casting method is performed on one side without patterning.
  • Two or more light emitting layers are formed by a spin coating method, an ink jet method, a printing method, or the like.
  • a white display device it can be used as a display device, a display, or various light emission sources.
  • the use of white organic EL elements as backlights enables full color display.
  • Display devices and displays include televisions, personal computers, mono equipment, AV equipment, text broadcast displays, information displays in automobiles, and the like. It can be used especially as a display device for playing back still images and moving images.
  • Light emitting sources include household lighting, interior lighting, clock and liquid crystal backlights, signboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, Examples include, but are not limited to, a light source of an optical sensor.
  • the lighting device of the present invention will be described.
  • the organic EL device having a resonator structure may be used as an organic EL device having a resonator structure in the organic EL device of the present invention.
  • Examples include, but are not limited to, photocopier light sources, optical communication processor light sources, and optical sensor light sources.
  • the organic EL device of the present invention may be used as a kind of lamp such as an illumination or exposure light source, a projection device of a type for projecting an image, a still image or a moving image. It may be used as a display device (display) of the type that is directly visually recognized. When used as a display device for video playback, either the simple matrix (passive matrix) method or the active matrix method may be used. Alternatively, a full color display device can be produced by using two or more organic EL elements of the present invention having different emission colors.
  • the organic EL device of the present invention is used as a white light emitting device, full color display can be performed in combination with a color filter of BGR.
  • the organic EL element of the present invention can also be applied to an organic EL element that emits substantially white light as a lighting device.
  • FIG. 5 is a schematic diagram showing an example of a display device configured with organic EL element power.
  • FIG. 2 is a schematic diagram of a display such as a mobile phone that displays image information by light emission of an organic EL element.
  • the display 1 also includes a display unit A having a plurality of pixels, a control unit B that performs image scanning of the display unit A based on image information, and the like.
  • the control unit B is electrically connected to the display unit A, and sends a scanning signal and an image data signal to each of a plurality of pixels based on image information from the outside. Sequentially emits light according to the image data signal, scans the image, and displays image information on display A. To display.
  • FIG. 6 is a schematic diagram of the display unit A.
  • the display unit A includes a wiring unit including a plurality of scanning lines 5 and data lines 6, a plurality of pixels 3 and the like on a substrate.
  • the main members of the display unit A will be described below.
  • FIG. 6 shows a case where the light intensity emitted from the pixel 3 is extracted in the direction of the white arrow (downward).
  • the scanning line 5 and the plurality of data lines 6 in the wiring portion are each made of a conductive material, and the scanning lines 5 and the data lines 6 are orthogonal to each other in a grid pattern and are connected to the pixels 3 at orthogonal positions ( Details are not shown).
  • the pixel 3 receives the image data signal from the data line 6, and emits light according to the received image data.
  • Full color display is possible by appropriately arranging pixels in the red region, the green region, and the blue region on the same substrate.
  • the organic EL device of the present invention is used as a white light emitting device, full color display can be performed by combination with a BGR color filter.
  • FIG. 7 is a schematic diagram of a pixel.
  • the pixel includes an organic EL element 10, a switching transistor 11, a driving transistor 12, a capacitor 13, and the like.
  • a full-color display can be performed by using an organic EL element that emits white light as the organic EL element 10 divided into multiple pixels and combining it with a BGR color filter.
  • an image data signal is also applied to the drain of the switching transistor 11 via the data line 6 in the control unit B force.
  • a scanning signal is applied to the gate of the switching transistor 11 via the control unit B force scanning line 5
  • the driving of the switching transistor 11 is turned on, and the image data signal applied to the drain is transferred to the capacitor 13 and the driving transistor. It is transmitted to the gate of the star 12.
  • the capacitor 13 With the transmission of the image data signal, the capacitor 13 is charged according to the potential of the image data signal, and the drive of the drive transistor 12 is turned on.
  • the drive transistor 12 has a drain IN is connected to the power line 7 and the source is connected to the electrode of the organic EL element 10, and current is supplied from the power line 7 to the organic EL element 10 according to the potential of the image data signal applied to the gate. Is done.
  • the driving of the switching transistor 11 is turned off. However, even if the driving of the switching transistor 11 is turned off, the capacitor 13 holds the potential of the charged image data signal, so that the driving of the driving transistor 12 is kept on and the next scanning signal is applied.
  • the organic EL device 10 continues to emit light until it is seen.
  • the driving transistor 12 is driven according to the potential of the next image data signal synchronized with the scanning signal, and the organic EL element 10 emits light.
  • the organic EL element 10 emits light by providing a switching transistor 11 and a drive transistor 12 as active elements for each of the plurality of pixels. Element 10 is emitting light. Such a light emitting method is called an active matrix method.
  • light emission of the organic EL element 10 may be light emission of a plurality of gradations by a multi-value image data signal having a plurality of gradation potentials, or a predetermined light emission amount by a binary image data signal. On, even a talent! /.
  • the potential of the capacitor 13 may be maintained until the next scanning signal is applied, or may be discharged immediately before the next scanning signal is applied.
  • the present invention not only the active matrix method described above, but also a passive matrix light emission drive in which the organic EL element emits light according to the data signal only when the scanning signal is scanned.
  • FIG. 8 is a schematic diagram of a display device using a passive matrix method.
  • a plurality of scanning lines 5 and a plurality of image data lines 6 are provided in a grid pattern so as to face each other with the pixel 3 interposed therebetween.
  • the pixel 3 connected to the applied scanning line 5 emits light according to the image data signal.
  • the noisy matrix method pixel 3 has no active elements, and manufacturing costs can be reduced.
  • a metal mask and an in- You may also use the jet printing method for patterning.
  • patterning only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire element layer may be patterned.
  • the white light emitting organic EL element of the present invention is not only the display device and the display, but also various light sources and lighting devices such as home lighting, interior lighting, and exposure light source.
  • a lamp it is also useful for a display device such as a backlight of a liquid crystal display device.
  • the ITO transparent electrode was provided after patterning was performed on a substrate (NH45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 110 nm of ITO (indium oxide) on a glass substrate of 100 mm X 100 mm X I. 1 mm as the anode.
  • the transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes. This transparent support substrate was fixed to a substrate holder of a commercially available vacuum deposition apparatus.
  • CuPc copper phthalocyanine
  • the heating boat containing ex-NPD was energized and heated, and deposited on the hole injection layer at a deposition rate of 0.1 nm / s ec to provide a 1 OOnm hole transport layer.
  • the heating boat containing m—TDATA was energized and heated to a deposition rate of 0.1 nm.
  • a 15 nm electron blocking layer was deposited on the hole transport layer at / sec.
  • the heating boat containing H-14 and Ir-12 was energized and heated, and co-evaporated on the hole transport layer with the mass ratio and film thickness shown in Table 1 to emit yellow light.
  • the light emitting layer 1 was provided.
  • the heating boat containing H-15 and Ir-15 was energized and heated, and co-evaporated on the light emitting layer 1 with the mass ratio and film thickness shown in Table 1 to emit blue light.
  • the light emitting layer 2 was provided.
  • the heating boat containing H-16 was energized and heated, and deposited on the light emitting layer at a deposition rate of 0.1 nm / sec to provide a hole blocking layer having a thickness of lOnm.
  • the heating boat containing Alq was energized and heated, and the deposition rate was 0. InmZsec.
  • An electron transport layer having a thickness of 40 nm was provided by vapor deposition on the light emitting layer.
  • the substrate temperature during vapor deposition was room temperature.
  • the ITO transparent electrode was provided after patterning on a substrate (NH Techno Glass NA45) made of 1 lOnm of ITO (indium oxide) on a 100 mm X 100 mm XI. 1 mm glass substrate as an anode.
  • the transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
  • a poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PED OTZPSS, manufactured by Bayer, Baytron P Al 4083) dispersion was formed on this transparent support substrate by spin coating at 3000 rpm for 30 seconds.
  • This transparent support substrate was fixed to a substrate holder of a commercially available vacuum deposition apparatus.
  • 200 mg of ⁇ NPD is put into a molybdenum resistance heating boat
  • 200 mg of m-TDATA is put into another molybdenum resistance heating boat
  • 200 mg of H-14 is put into another molybdenum resistance heating boat.
  • H-15 in a resistance heating boat made of molybdenum Ir-12 is put into a Ribden resistance heating boat, lOOmg Ir 15 is put into another molybdenum resistance heating boat, 200 mg H-16 is put into another molybdenum resistance heating boat, and another molybdenum resistance is added.
  • Ir-12 is put into a Ribden resistance heating boat
  • lOOmg Ir 15 is put into another molybdenum resistance heating boat
  • 200 mg H-16 is put into another molybdenum resistance heating boat
  • another molybdenum resistance is added.
  • the heating boat containing m—TDATA was energized and heated to a deposition rate of 0.1 nm.
  • a 15 nm electron blocking layer was deposited on the hole transport layer at / sec.
  • the heating boat containing H-14 and Ir-12 was energized and heated, and co-evaporated on the hole transport layer with the mass ratio and film thickness shown in Table 1 to emit yellow light.
  • the light emitting layer 1 was provided.
  • the heating boat containing H-15 and Ir-15 was energized and heated, and co-evaporated on the light-emitting layer 1 with the mass ratio and film thickness shown in Table 1 to emit blue light.
  • the light emitting layer 2 was provided.
  • the heating boat containing H-16 was energized and heated, and deposited on the light-emitting layer 2 at a deposition rate of 0. Inm / sec to provide a hole blocking layer having a thickness of lOnm.
  • the heating boat containing Alq was energized and heated, and the deposition rate was 0. InmZsec.
  • An electron transport layer having a thickness of 40 nm was formed by vapor deposition on the hole blocking layer.
  • the substrate temperature during vapor deposition was room temperature.
  • OLED devices 1-3, 1-4, and 1-6 to 1-8 were prepared in the same manner as the organic EL devices 1-2, except that the light emitting layer was changed to the configuration shown in Table 1. did.
  • Organic EL element 1-5 was prepared in the same manner as in the manufacture of organic EL element 1-1, except that the light emitting layer was changed to the structure shown in Table 1.
  • Organic EL elements 19 to 111 were fabricated in the same manner except that the configuration was changed as shown in Table 1.
  • the material of the light-emitting layer 1 is a force described as H-14: Ir 12 (3 mass%, 20 nm). Among them, H-14 represents 97 mass%, Ir-12 represents 3 mass%, and the light-emitting layer 1 has a thickness of 20 nm.
  • the external extraction quantum efficiency (%) was measured when a constant current of 2.5 mA / cm 2 was applied in a dry nitrogen gas atmosphere at 23 ° C.
  • a spectral radiance meter CS-1000 manufactured by Co-Camino Norta Sensing
  • power efficiency (lm (lumen) ZW) was measured as an indicator of lower drive voltage and power consumption.
  • the dark spot generation rate (the force that dark spots are generated in 10 devices) was measured, and the results obtained are shown in Table 2.
  • the sample of the present invention does not generate dark spots with high luminous efficiency, has stable device performance, and high production efficiency.
  • the organic EL element 2 was similarly prepared except that H-16 was provided as an intermediate layer between the respective light emitting layers by a 2 nm deposition method. — :! ⁇ 2— Organic EL device manufactured in Example 1 and manufactured in Example 1 1— :! The following evaluation of chromaticity deviation was conducted together with ⁇ 1-8, and the results obtained are shown in Table 3.
  • the chromaticity shift is shown in the CIE chromaticity diagram! /, And the chromaticity coordinate at lOOcdZm 2 luminance and the chromaticity coordinate at 5000 cdZ m 2 luminance.
  • the measurement was performed using CS-100 (manufactured by Corminor Minolta Sensing) at 23 ° C in a dry nitrogen gas atmosphere.
  • organic EL elements 2-1 to 2-8 are organic EL elements 1
  • H-16 and Ir-13 were formed between the light emitting layer 1 and the light emitting layer 2 in the light emitting unit.
  • a mixed region 2 of H-16, Ir-1, and Ir-9 is provided 2 nm between the mixed region 1 of Ir-1 and the light emitting layer 2 and the light emitting layer 3, respectively.
  • — 8 was made.
  • the deposition rate of Ir-1 is increased by increasing the deposition starting force so that the deposition rate of Ir-13 also decreases the deposition starting force and becomes 0 when the film thickness reaches 2 nm.
  • the mass ratio with H-16 was adjusted to be the same as that of the light emitting layer 2.
  • the deposition rate of Ir-1 is decreased from the start of deposition and becomes 0 when the thickness reaches 2 nm, and the deposition rate of Ir 9 is increased from the start of deposition to 2 nm.
  • the mass ratio with H-16 was adjusted to be the same as that of the light emitting layer 3.
  • the power efficiency (lm (lumen) / W) was measured for the fabricated organic EL device when a constant current of 2.5 mAZcm 2 was applied at 23 ° C in a dry nitrogen gas atmosphere. Show. For the measurement, a spectral radiance meter CS-1000 (manufactured by Co-Camino Norta Sensing) was used in the same manner.
  • organic EL device 18 described in Example 1 was the same except that the concentration of the light emitting dopant was continuously changed in the light emitting unit in all layers of the light emitting unit as shown in FIG. Thus, organic EL elements 4-8 were produced.
  • the light emitting unit of Fig. 4 was manufactured as follows.
  • H-16, Ir13, Ir1, Ir9 were simultaneously energized and heated to adjust the deposition rate and start vacuum deposition.
  • the mass ratio reached 94.9: 2: 3: 0. 1 when the film thickness reached 18 nm, and the mass ratio reached 91.9: 0.1: 3: 5 when the film thickness reached 22 nm.
  • the deposition rate was adjusted to 11: -13, 11: 1, 11: -9 so that the mass ratio would be 90.8: 0.1: 0.1: 9
  • the power efficiency (lm (lumen) / W) was measured for the fabricated organic EL device when 2.5 mAZcm 2 constant current was applied at 23 ° C in a dry nitrogen gas atmosphere. The results are shown in Table 5. .
  • a spectral radiance meter CS-1000 manufactured by Ko-Force Minolta Sensing Co., Ltd. was used in the same manner.
  • Phen Cs (mass ratio 75: 25)
  • Organic EL devices 5-1 to 5-8 were fabricated in the same manner except that it was changed to a co-deposited film and LiF was not deposited.
  • the non-light emitting surface was covered with a glass case, and a color filter was attached to the light emitting surface to use it as an image display device. And was able to be used as an excellent image display device.
  • the non-light emitting surface was covered with a glass case. It was covered and used as a lighting device.
  • the lighting device could be used as a thin lighting device that emits white light with high luminous efficiency.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L’invention concerne un dispositif électroluminescent organique permettant d’obtenir une grande efficacité lumineuse à faible tension d’excitation tout en ayant une productivité élevée. Elle concerne également un affichage d’image et un dispositif d’éclairage comprenant chacun un tel dispositif électroluminescent organique. Elle concerne spécifiquement un dispositif électroluminescent organique comprenant au moins une anode, une cathode et une couche organique, qui est disposée entre l’anode et la cathode et comporte une unité luminescente, sur un substrat support. L’unité luminescente comporte deux ou plus de deux couches luminescentes ayant des pics d’émission différents, et toutes les couches luminescentes contiennent un dopant luminescent et un hôte luminescent. Si l’épaisseur totale de film des couches organiques entre l’anode et l’unité luminescente est représentée par d1, l’épaisseur de film de l’unité luminescente est représentée par d2, et l’épaisseur totale de film des couches organiques entre l’unité luminescente et la cathode est représentée par d3, le dispositif électroluminescent organique est caractérisé en ce qu'il satisfait aux relations 5 nm ≤ d2 ≤ 30 nm et 5 ≤ (d1 + d3)/d2.
PCT/JP2006/303837 2005-03-04 2006-03-01 Dispositif électroluminescent organique, affichage d’image et dispositif d’éclairage WO2006093176A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007505976A JP4946862B2 (ja) 2005-03-04 2006-03-01 有機エレクトロルミネッセンス素子、画像表示装置および照明装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005060345 2005-03-04
JP2005-060345 2005-03-04

Publications (1)

Publication Number Publication Date
WO2006093176A1 true WO2006093176A1 (fr) 2006-09-08

Family

ID=36941205

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/303837 WO2006093176A1 (fr) 2005-03-04 2006-03-01 Dispositif électroluminescent organique, affichage d’image et dispositif d’éclairage

Country Status (2)

Country Link
JP (1) JP4946862B2 (fr)
WO (1) WO2006093176A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080435A (ja) * 2008-09-01 2010-04-08 Semiconductor Energy Lab Co Ltd 発光素子、発光装置並びに電子機器
WO2012157575A1 (fr) * 2011-05-13 2012-11-22 Ｎｅｃライティング株式会社 Élément électroluminescent organique et dispositif d'éclairage électroluminescent organique
JP2018525766A (ja) * 2015-08-12 2018-09-06 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 有機エレクトロルミネセント装置及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0711244A (ja) * 1993-06-24 1995-01-13 Mitsui Petrochem Ind Ltd 薄膜電界発光素子並びにその製造方法
JP2003272860A (ja) * 2002-03-26 2003-09-26 Junji Kido 有機エレクトロルミネッセント素子
JP2004047469A (ja) * 2002-07-08 2004-02-12 Eastman Kodak Co 有機発光ダイオードデバイス
JP2004311231A (ja) * 2003-04-08 2004-11-04 Denso Corp 有機ｅｌ素子
JP2004322489A (ja) * 2003-04-25 2004-11-18 Pioneer Electronic Corp ガスバリア基材およびその製造方法
JP2005002346A (ja) * 2003-12-25 2005-01-06 Tetsuya Nishio ジアミノ化合物、ビニル化合物、高分子化合物、配向膜、該配向膜を用いた有機半導体装置、導電性高分子、該導電性高分子を使用したエレクトロルミネッセンス素子、液晶配向膜、及び該液晶配向膜を用いた光学素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0711244A (ja) * 1993-06-24 1995-01-13 Mitsui Petrochem Ind Ltd 薄膜電界発光素子並びにその製造方法
JP2003272860A (ja) * 2002-03-26 2003-09-26 Junji Kido 有機エレクトロルミネッセント素子
JP2004047469A (ja) * 2002-07-08 2004-02-12 Eastman Kodak Co 有機発光ダイオードデバイス
JP2004311231A (ja) * 2003-04-08 2004-11-04 Denso Corp 有機ｅｌ素子
JP2004322489A (ja) * 2003-04-25 2004-11-18 Pioneer Electronic Corp ガスバリア基材およびその製造方法
JP2005002346A (ja) * 2003-12-25 2005-01-06 Tetsuya Nishio ジアミノ化合物、ビニル化合物、高分子化合物、配向膜、該配向膜を用いた有機半導体装置、導電性高分子、該導電性高分子を使用したエレクトロルミネッセンス素子、液晶配向膜、及び該液晶配向膜を用いた光学素子

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080435A (ja) * 2008-09-01 2010-04-08 Semiconductor Energy Lab Co Ltd 発光素子、発光装置並びに電子機器
US8810125B2 (en) 2008-09-01 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
WO2012157575A1 (fr) * 2011-05-13 2012-11-22 Ｎｅｃライティング株式会社 Élément électroluminescent organique et dispositif d'éclairage électroluminescent organique
JP5791129B2 (ja) * 2011-05-13 2015-10-07 Ｎｅｃライティング株式会社 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス照明装置
JP2018525766A (ja) * 2015-08-12 2018-09-06 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 有機エレクトロルミネセント装置及びその製造方法

Also Published As

Publication number Publication date
JPWO2006093176A1 (ja) 2008-08-07
JP4946862B2 (ja) 2012-06-06

Similar Documents

Publication Publication Date Title
JP5076501B2 (ja) 白色有機エレクトロルミネッセンス素子、画像表示素子および照明装置
JP4697142B2 (ja) 有機エレクトロルミネッセンス素子、表示装置および照明装置
JP4858169B2 (ja) 有機エレクトロルミネッセンス素子
JP4904821B2 (ja) 有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンスディスプレイ
WO2006093007A1 (fr) Element electroluminescent organique, module d’affichage d’images et dispositif d’eclairage
JP5050333B2 (ja) 有機エレクトロルミネッセンス素子
JP4650265B2 (ja) 有機エレクトロルミネッセンス素子、照明装置及び表示装置
WO2007029533A1 (fr) Élément à électroluminescence organique, dispositif d'affichage et dispositif d'éclairage
JP4899284B2 (ja) 有機エレクトロルミネッセンス素子、照明装置及び表示装置
WO2006112265A1 (fr) Dispositif electroluminescent organique, dispositif d'eclairage et d'affichage
WO2007023659A1 (fr) Matériau pour dispositif électroluminescent organique, dispositif électroluminescent organique, dispositif d’affichage, et dispositif d'éclairage
JP5180429B2 (ja) 有機エレクトロルミネッセンス素子
WO2006129471A1 (fr) Matériau pour un dispositif à électroluminescence organique, dispositif à électroluminescence organique, procédé de production d’un tel dispositif à électroluminescence organique, installation d’éclairage et unité d’affichage
WO2006100925A1 (fr) Materiau de dispositif electroluminescent organique, dispositif electroluminescent organique, ecran et dispositif d'eclairage
JP4600287B2 (ja) 有機エレクトロルミネッセンス素子用材料、有機エレクトロルミネッセンス素子、照明装置および表示装置
JP4941291B2 (ja) 有機エレクトロルミネッセンス素子
JP4946862B2 (ja) 有機エレクトロルミネッセンス素子、画像表示装置および照明装置
JP2007095441A (ja) 有機エレクトロルミネッセンスパネル
JP2006093279A (ja) 有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP2012028823A (ja) 有機エレクトロルミネッセンス素子
JP2007059245A (ja) 膜の製造方法、電子デバイス及び有機エレクトロルミネッセンス素子の製造方法、有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP2012190742A (ja) 有機エレクトロルミネッセンス素子とその製造方法
JP2013123056A (ja) 有機エレクトロルミネッセンス素子

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007505976

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 06714956

Country of ref document: EP

Kind code of ref document: A1