WO2006093099A1 - Substrat de silicium polycristallin, lingot de silicium polycristallin, leurs procédés de fabrication, convertisseur photoélectrique et module de conversion photoélectrique - Google Patents

Substrat de silicium polycristallin, lingot de silicium polycristallin, leurs procédés de fabrication, convertisseur photoélectrique et module de conversion photoélectrique Download PDF

Info

Publication number
WO2006093099A1
WO2006093099A1 PCT/JP2006/303638 JP2006303638W WO2006093099A1 WO 2006093099 A1 WO2006093099 A1 WO 2006093099A1 JP 2006303638 W JP2006303638 W JP 2006303638W WO 2006093099 A1 WO2006093099 A1 WO 2006093099A1
Authority
WO
WIPO (PCT)
Prior art keywords
oms
mold
analyzed
photoelectric
degree
Prior art date
Application number
PCT/JP2006/303638
Other languages
English (en)
Japanese (ja)
Inventor
Koichiro Niira
Shigeru Gotoh
Original Assignee
Kyocera Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corporation filed Critical Kyocera Corporation
Publication of WO2006093099A1 publication Critical patent/WO2006093099A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • 001 and the oxygen concentration and elementary concentration are controlled, and the manufacturing method thereof.
  • This is used, for example, for a photoelectric element or a photoelectric element in which it is arranged.
  • a and aXO are represented. It is a solar cell that uses solar cells. Especially, the type that uses a lot is the maximum because it can stand the rate and the low strike, and the production volume is expected to grow further in the future.
  • Fig. 45 shows the general configuration of the Cun-yang battery described in. 4 is a diagram showing a cross-sectional structure, and 5 is a top view of the solar cell () viewed from the light side.
  • a reflection 6 made of a nitride film or the like is provided on 4.
  • a “area 7” mold 7 containing a large amount of mold conductors such as aluminum is provided on the opposite side of the mold 5.
  • the mold 7 is generated in the semiconductor region 3, and in order to collect these as current and reach the output element, is provided with an electrode (swinger 2) mainly composed of a material such as silver.
  • the mold 7) is provided with an electrode 8 made of aluminum silver or the like and an electrode 9 made mainly of silver. These 2 8 9 are usually made up of strikes.
  • the conversion of the 006 positive cell (generally, both of the positive and negative cells) is almost determined by the (periodic) quality and the device process before the process is performed. Is done. If the device process is the same, the higher the initial quality, the higher the quality. For this reason, it has been an extremely important research and development technol- ogy in the early stages.
  • the purpose is to improve the yield and yield of photons and dice using photons.
  • the cause of the light is relatively affected by the contamination of the in, the manufacturing, and the mold surface of the area. This also applies to the following. [0113] It has photoelectricity, high performance, and yield that can be obtained by using the silicon that satisfies this condition.
  • the element concentration is analyzed by a oms cm S s
  • the element concentration is analyzed by c a oms cmL.
  • the element concentration in () may be difficult to determine accurately because it becomes in and, but in this case, c cs is added as in, so measure it. Is relatively easy. Therefore, instead of measuring c c5, it is possible to evaluate the quality of the product by determining whether or not the relationship of the above equation (2) is satisfied.
  • 00117 may suppress dislocation growth at an appropriate level, but when it becomes excessively high (when it is combined and put out), it reversely acts as a dislocation and improves the quality. In the case of satisfying the relationship of (4a) or (4b), dislocation generation is suppressed.
  • in and out may be output.
  • in and out may be output.
  • substantially sealed means that a gas inlet may be provided in order to prevent the gas from passing through in the closed state. To do. This is because the purpose of sealing is to prevent the inside of the gas from entering, and it is intended to reduce the gas.
  • the mold is substantially sealed by heating means that the mold may be provided with a gas hole so that the gas does not pass through the mold.
  • Obtaining the result of refusal of 0025 may include solidifying and rejecting the product in the above to produce in, and cutting out the produced int.
  • the average value of the full width at half maximum is, for example, the average value of the fixed values in the four or more areas that are arranged at approximately equal intervals in the plane excluding the area of c width.
  • the constant value in a range can be, for example, the average value of the constant values at three or more measurement points set in the range.
  • Photoelectrics obtained using a material satisfying the condition of () have a high rate.
  • the degree of impurity of the type impurity is a oms cm, > 5 (3), where the impureness of type impurity is a oms cm
  • a n-in with a main impurity of type impurities such as P, s Sb doping oxygen emission is suppressed, and the resulting in and A are reduced.
  • the relationship of the above equation (3) is satisfied, the relationship of the above equation (2) is easily satisfied, and therefore, the relationship of the above equation () is easily satisfied.
  • the photoelectron-in according to another aspect of 003 is obtained by solidifying the solid, and it can be obtained by microscopic lan- trophotometry even in the direction of solidification 2 above and below 8 in the direction of solidification.
  • n means “n”. The position corresponding to the position when Therefore, when the direction is turned downward () upward (), the hardest inset is fixed and the hardest in is fixed.
  • the type impurity is a oms cm and the impurity of the type impurity is a oms cm,
  • 003 is a mold for manufacturing many of the other aspects of Ming
  • the difference of the above-mentioned difference is used for the child. Therefore, it has high performance and yield.
  • the difference of the above-mentioned difference is used for the child. Therefore, it has high performance and yield.
  • Akiraji is a high-characteristic die because it is formed by electrically connecting multiple bright children in series or in parallel.
  • FIG. 37 is a plan view showing an example of the production of a solar cell () using a lot of light according to 037
  • Fig. 2 shows the solar cell 2 as seen from the side, and shows an example of the shape of a solar cell.
  • Fig. 3 shows the positive electrode 3 seen from the side, and shows an example of the shape of a solar cell.
  • Fig. 4 is a diagram showing the surface structure of a general positive battery module.
  • Fig. 5 is a view of the positive battery panel of 4 from the side.
  • FIG. 6 is a graph showing the relationship with 6 A photocurrent J c.
  • FIG. 7 is a diagram showing the relationship between A and Ac.
  • FIG. It is a figure showing 8 C Cs.
  • 11 is a plan view showing the structure of the method used in the Myon Law.
  • FIG. 12 is a plan view showing the construction of the mold used in the Min-n method.
  • Fig. 14 is a plan view showing a general configuration of a conventional Cun-yang battery.
  • Fig. 15 is a top view from the side showing a general configuration of a conventional Cun-yang battery.
  • FIG. 16 is a graph showing the relationship between the 16-run value width and the element ratio.
  • FIG. 17 is a diagram showing the relationship with 17 A run value range W;
  • FIG. 3 is a plan view showing an example of the production of a solar cell () using a lot related to Ming. Further, 23 is a diagram showing an example of the shape of the positive battery according to Ming, 2 is a view from the side, and 3 is a view from the (opposite to) side.
  • P (ion) is diffused at a high concentration to form 4, and is formed between the pattern region.
  • the length of 4 is usually 2 to 5 degrees.
  • the conductor (4) is provided with a reflection 6 made of a nitride film or the like.
  • type conductors such as Aum
  • area included in the quantity.
  • the positive battery is provided with an electrode mainly composed of a material such as silver, and is provided with an electrode 8 mainly composed of aluminum and an electrode 9 mainly composed of silver.
  • the 00417 is also called an S (BacceFed) region, and plays a role in reducing the rate at which the carrier reaches the electrode 8 and recombines, whereby the current c is improved.
  • this "Type 7" reduces the minority carrier () degree, the diode current (current amount) in the area in contact with this "Type 7 electrode 8" is reduced, and thereby the discharge voltage oc of the solar cell is reduced.
  • the 042 electrode that improves is generally a finger (
  • a metal material is used for the electrode in order to reduce the power at the electrode as much as possible.
  • O is the elemental concentration when analyzed with A and S S.
  • this positive battery is at least the area excluding the c area
  • the material is put in and heated by melting to melt the material inside.
  • quartz generally used in the z method can be used.
  • the gas atmosphere is set, and the gas pressure is adjusted in the range of a to a (atmospheric pressure) degrees.
  • the mold can be composed of a graphite carbon material, quartz quartz glass, or a ceramic material.
  • the gas pressure is adjusted within the range of Pa to Pa (atmospheric pressure) degrees.
  • the mold can be composed of a graphite carbon material, quartz quartz glass, or a ceramic material.
  • the material of the wall of 0051 is mixed with appropriate materials such as P and mixed materials, and the mold is heated, and the mold is heated to remove the organic materials. Thereby, it adheres to the mold wall.
  • appropriate materials such as P and mixed materials
  • S powder can be used, and by adding an appropriate amount of SO powder to this, it is possible to effectively prevent the separation and spillage of water in and water. .
  • the oxygen concentration in the input can be easily reduced. Although it is normal to have an elementary concentration, it is possible to effectively reduce the oxygen concentration by maintaining the sparse state after entering this state and then proceeding to solidification. Furthermore, it is possible to cut into the ins and areas in contact with the mold wall.
  • the doping amount must be adjusted in consideration of () for each doping, but for example, if , Of (Int) 3
  • the conductor 5 is included at least.
  • the inverse 4 of the mold is formed. It is desirable to use (n) as the type doping element.
  • the resistance is 3 to 3 degrees.
  • a gap is formed between the above-described five. Here, it is composed of an area widened on the pattern 5 side and an area widened on the reverse 4 side.
  • the method of 0654 is achieved by diffusing the doping (P) at a temperature of 7 to C degrees using the diffusion of PC (oxygen) in the gas state. At this time, the diffusion is set to 2 to 5 degrees, but this can be realized by adjusting the degree and interval to form a desired pipeline.
  • a diffusion region is also formed on the surface opposite to the target surface.
  • a dying film to the other four parts, removing the dying film, and removing the dying film.
  • 7 (S) is formed by an aum plaster
  • the mold which is an um, can be diffused to a sufficient degree to a sufficient degree. Can be negligible. Therefore, in this case, it is not necessary to leave the layer formed in this area.
  • the film is not limited to 4, but, for example, using a technique and a case, a hydrogen film, a silicon film including a silicon film, or the like may be formed at 4 C degrees or less.
  • the lower limit is 2 and the lower limit is 2.
  • the lower limit is 50 and the lower limit is 2 when a film is formed.
  • the charges for 6 are S, O,
  • S,, (did), S, Z films, etc. can be used.
  • the size is selected according to the material and fulfills the requirements for human radiation. If the rate of the fee is taken as, and the length of the specified spectral region is taken, () 4 d becomes the reflection. For example, if the length of S (2), which is generally used, is set to 6 in consideration of the positive spectroscopic property, it can be expressed in degrees.
  • Reflection 6 is formed at a temperature of 4 to 5 ° C when heat treatment is performed, and reflection 6 is formed at a temperature of 4 ° C when thin film processing is performed.
  • the electrode is not formed by a later-described fire method, the reflection 6 is removed (tanged) with a predetermined tongue (substantially the same as the electrode).
  • a predetermined tongue substantially the same as the electrode.
  • a skirt made of dyst or the like and having a tang that is almost the same as the electrode is used (wood or dry), or a skirt that has the same tang as the front electrode is formed before the reflection 6 is formed. A method of removing this can be used for the reflection 6.
  • the material remaining on 7 can be used as a part of the electrode 8 as it is, and it is not necessary to remove this residual material with acid or the like.
  • Type 7 is limited to using printing method and For example, it may be possible to form a film containing a resin phase at a temperature of 4 C or less. In particular, when the technique is used, the technique of 7 is also used. At this time, it should be ⁇ 2 degrees of a film such as a hydrogenated amine film. At this time, it is effective to improve the characteristics if a gap between 7 and the mold 5 is formed under a thickness of 2. However, when applying techniques, it is desirable to determine the order so that the degree of process will be as high as the latter process, considering the degree of process described below.
  • an electrode 9 is formed by applying and applying a silver strike on the surface of the substrate.
  • the silver powder and the organic glass liquor are added to the silver powder, and an organic cup glass is added to each to add 3 parts and .about.5 to form a strike.
  • These strikes are printed on the surface of the screen, for example, and dried, and after a few seconds to minutes at 6 to 8 C, these strikes are baked into the print.
  • electrode 9 is formed.
  • the outside line () as a high speed (time) process. If this method is used, the time can be shortened to several seconds to 10 seconds or less.
  • the electrode 9 should be simultaneously (in one time), but it is sometimes better to divide it into two times due to the characteristics of the back electrode (e.g., the front electrode first) Printing, printing 9 etc.).
  • the reflection 6 is not tongued by a so-called fire method.
  • the electrode Electrical contact can be obtained between the two and this is very effective in reducing manufacturing costs. It may be performed prior to the formation of electrode 7.
  • the printing method using a strike may include O or the like in the strike, and in the vacuum, the electrode 89 9 semiconductor region. 4 Insert metal with the main component on the 7 and side. It should be noted that it is desirable to suppress the reflection reduction due to the metal insertion as the bottom of the metal on the back side electrode. In order to increase the length of the long wavelength that reaches, it is desirable that the electrode 8 be formed on the surface.
  • the back electrode 8 be formed in such a state that 9 can be removed as much as possible.
  • the 9 electrode 8 may be formed in the opposite manner.
  • the back side may have a structure composed of a swinger mainly composed of silver similar to the electrode without taking the above-described structure.
  • the electrodes and electrodes 8 and 9 can be formed using printing, stutter, etc. And move it down 4 C.
  • solder region is formed on the electrode electrode by solder dip processing. If solder is used as the soldering material, solder dipping is applied.
  • a positive battery which is a photon according to Ming, can be formed.
  • a positive battery which is a photoelectron formed in this way, usually has a II electric power, so it is generally regarded as a solar battery in which a plurality of positive batteries are connected in series. And this positive battery By combining several, a practical electric force can be extracted.
  • a table of solar cells is shown in 0083 45.
  • 4 is a diagram showing the surface structure of a general positive battery, and 5 is a view of the positive battery from the side.
  • Positive battery element 4 is a wiring part for connecting a solar battery person to electricity, 42 is transparent, 43 is 44, front side, 45 is back side, 46 is output output, 47 is box, and 48 is a frame.
  • the solar cell As shown in 004 4, 42 made of glass or the like, front side 44 made of a transparent polymer polymer () or the like, and the other of the adjacent solar cells are connected to each other by the wiring portion 4. 45, consisting of a number of positive cells, etc., for example, 4 3 filled with potentite (P) metal (P), stacked in sequence, removed and heated in the net Thus, the solar cell can be completed.
  • P potentite
  • a surface of a thickness of 2 to 2 degrees and a width of 2 degrees is usually covered with a soldering material, and cut into a predetermined length to obtain a solar cell. Soldered to the highest point.
  • Figure 6 shows the relationship with the photocurrent Jsc, which is the A element characteristic.
  • Jsc the A element characteristic.
  • A can be interpreted as corresponding to the amount of oxygen released, that is, corresponding to the size of the output, if A is above a oms cm, the quality degradation due to the output cannot be ignored, and the device characteristics It is considered to be under
  • Cs increases with and reaches a peak at the rate at which A C Cs reaches the sum. This can be explained using the SC system phase shown in. In other words, it is explained by the fact that the C degree increases with solidification, and that the SC is considered to have reached the point in the SC.
  • a heating heater composed of a carbon material is used.
  • the SC surface of the carbon material may be effective (T kdae a Eec ochem oc ⁇ , vo 14 No 8A g s 994p2216)
  • Gas defined by. Use as a guide to determine the gas level g
  • volume g g
  • the road is always an important design element. Actually, fresh (low) was sprayed on the surface, and the gas flow was in the direction of the flow so that the high flow was reversed on this surface. It is preferable to design the structure as much as possible (without causing a minute). To realize this structure, it is necessary to find a trial optimum structure. However, if it is adopted, the path described here will be filled almost dynamically. [0099] In addition, it is optimized in relation to the path of carbon material hits. In other words, it is preferable not to place the carbon material near, at the upstream side of the carbon material. For this arrangement, it is necessary to find the optimal number of trials.
  • the melting floor is designed to take measures such as raising the melting plate, heating the plate, setting the plate, and heat if necessary.
  • it is necessary to devise so that it can be used for raw material solution.
  • the mold with the cooling mold for example, the contact mold only
  • the mold of the cooling by the cooling When cooling the steel, measures such as increasing the cooling amount, converting the mold material, and conducting heat (using a density graph, etc.) can be taken. Furthermore, in order to increase the force even if one direction is lost, it is possible to take measures to cool both the mold and the mold part.
  • measures such as increasing the cooling amount, converting the mold material, and conducting heat (using a density graph, etc.
  • measures to cool both the mold and the mold part in order to increase the force even if one direction is lost.
  • the same weight of in-and-in is produced, it is effective to increase the rate by making the mold area as large as possible and making the mold area as large as possible.
  • FIG. 3 is a plan view showing the structure used in the Myon law. This is composed of 2 and 3 which is removable.
  • an inlet 4 for introducing is formed in order to flow the inside.
  • an inlet 4 for introducing is formed in order to flow the inside.
  • 2 and 3 there is formed to allow the to escape.
  • 2 is provided with an inlet 5 capable of injecting into the mold.
  • 0104 represents a heating heater or break made of a carbon material for heating.
  • 0106 2 is the production of the mold used in the Myon Law FIG.
  • This consists of a mold 2 and a removable mold 22.
  • an inlet 23 is formed for introducing the gas in order to flow the gas into the metal.
  • a hole is formed for releasing the metal.
  • 24 is cooling placed in the mold, and 26 is provided on the wall of the mold body.
  • (z) for attaching / detaching the mold 22 can be provided in. This is because the mold 22 is removed in order to insert or remove the mold, which will be described later, and 22 is inserted again after the mold is inserted.
  • 22 is not indispensable. Even if 22 cannot be removed, it is only necessary that the mold has a structure for insertion and insertion. Even in this case, the mold 2 must be configured to be substantially sealed except at least when the container is inserted or inserted.
  • the mold shown in 2 is equipped with a heater with sufficient output, it is substantially within 2 that is substantially sealed by 22 until the solution of the material is completely fixed. Since it can be carried out in an atmosphere in which only air flows, it is possible to reduce the stain of (in,) to the maximum extent.
  • the ins obtained by these steps can be cut out from the solar cell (). As a result, the elemental concentration is reduced, so that AC is reduced. In other words, it is a very suitable method for the solution of the material in the above state and / or the production of a lot in the clear state.
  • the elemental concentration of N is an appropriate value, it has the effect of suppressing the growth, but if it is high enough to saturate, it will act as a dislocation and will have a quality.
  • Figure 3 shows the element concentration and lifetime measured by S S along the direction of the in-line. Shows the relationship.
  • the element concentration by 0111 S S can be the same as that of other light elements.
  • the elements described below can be adopted.
  • PC Iku conductive
  • This is to detect a (conducting) due to the coupling of the carrier formed by the intrusion of light such as the semiconductor light as the degree of reaction of the struck wave of humans as detection. That is, the lifetime of. It is.
  • S-made life time scanner WT 2000 can be cited as the fixed device.
  • the standard conditions by this arrangement for example, the irradiation length 94 nm (or 64), the irradiation diameter mm, and the ping (scan pitch) mm can be set. This allows the body to ,minimum. ,maximum. ,. Up. A histogram or the like can be easily evaluated.
  • the elemental concentration is close to 4 ⁇ 5 a oms cm. Is the maximum, and on this (inside) side, it is the time limit. (Inward, towards the left side than the above. The upward trend is that the oxygen concentration decreases because the oxygen concentration decreases towards the inward direction.) Is also considered to be reduced accordingly).
  • This can be interpreted as follows, considering that the S-solution of is 6 8 a oms cm and 4 ⁇ 55 a oms cm at the melting point. In other words, in the manufacture of the elephant 3 which is the elephant of the third, it is the sum of the previous one, and solidifies from the part of the mold.
  • the raw material begins to come out in the raw form, and with the solidification of the li, the product is taken into the b, and even if it is not taken in the form of the product, the If the value in the S decreases with (decrease in degree), it becomes oversaturated.
  • This product acts as a dislocation because a local force is generated due to the conversion of the product into and from the inside, and the difference in the cooling rate due to the difference in the expansion coefficient between the product and the bond. To do. As the degree of dislocation increases, the lifetime generally decreases. From the above, if you take into account
  • the method in which the sample is melted in 2 and then transferred to the mold 2 is transferred to the mold 2 until it is dissolved and solidified in comparison with the method in which Since the time existing in the mold 2 can be shortened to the same level, If not done, the amount of liquid charge can be reduced. Therefore, the method of melting the material in 2 can easily satisfy the relationship of the above equations (4a) and (4b).
  • the positive battery element according to the second aspect may have the same structure as the positive battery shown in FIG. However, the average value in the region excluding the c region in the value range (run value range) of the 52 c appearing in the spectrum obtained by the micro battery analysis in the positive cell according to the second state is W.
  • this type is at least c
  • [0124] is a diagram showing the relationship between the run value width and the element () ratio. 6 is based on the data of 3 and 4 below, and the implementation data is that of a photoelectron manufactured using an ion that satisfies the relationship of the above formula (), and the comparison data is the above ( The photoelectron is manufactured using a material that does not satisfy the relationship of the formula. Compared with a standard run with a microscopic run, the measurement area is shaped and its diameter is, for example, and the diameter of the measurement area is high, the detection rate is higher. can do.
  • the input may be obtained by melting the raw material with a mold and leaving it as it is.
  • the elemental concentration of n can be reduced.
  • the elemental concentration when analyzed with nss is ca oms cm
  • the elemental concentration when analyzed with cs a oms cm is defined as c cs. ca oms cm, body
  • X is defined as A (, AO a oms cm) when the degree of analysis with SS in 0128 is a oms cm, and the elemental concentration O a oms cm when analyzed with Or, in the case where the relationship of the above equation (52) is satisfied, the solidification rate in the body and the int
  • This Yin-in is the body with the run value width W.
  • 0130 7 shows examples of oxygen X A and run value width W.
  • the air-lifting technique promotes the release of oxygen in the air, and the grade in the air works to suppress the oxygen output.
  • the same phenomenon is expected to occur in the clear structure that solidifies the metal, and by increasing the s degree above this level, the output is suppressed and the run value range can be controlled to be low. I don't think it's going to be. According to this method, the above-mentioned Ac can be relaxed. In other words, the capacity of carbon dyeing can be increased, and high-quality in-in production can be realized more easily.
  • a method for controlling the low value range there is a method of producing in and in the amount of an element that suppresses oxygen release.
  • a doping element such as s Sb can be cited. If this method is applied, these elements should be included in the quantity at the time of doping described later.
  • Impure element heading is Pa oms cm and type impurity heading is a oms cm.
  • the specific doping is as follows. (Adjusted to be the impurity level of the impurity)
  • Oxygen can be supplied arbitrarily in the solid (SO) state. For example, it is possible to add an appropriate amount of powder, intention, quartz powder, or an appropriate amount of quartz or wire-like stone wire. In this case, since oxygen is supplied from quartz powder and stone-like stone wire, it is possible to control the element throughout the solidification process.
  • the amount of supply per unit is about 4 (24) in terms of quartz SO. 8 (48) above. Since it is proportional to SO 2 gas, if the mold shape is different from the above, the supply amount is adjusted in consideration of this.
  • a gas such as O or O may be mixed in the gas in combination with the above-described mold.
  • the tone is formed on the graphite by a ton forming method, or the tone is extracted from the solution. You can get fruits.
  • the explanation was made with a solar cell using a mold. However, when a mold is used, the light can be applied in the same way by reversing () in the explanation. . However, this morpheme may not produce oxygen.
  • the semiconductor Even if it is made by laminating on the resulting metal, the light can be applied.
  • the Cun-yang battery is taken as an example.
  • the present invention is not limited to these, and can be any state as long as it does not depart from the scope of the invention.
  • a photon having a component having a component and having a carrier and collecting a carrier generated in the conductor region by irradiation of the surface as a current is not limited to these, and can be any state as long as it does not depart from the scope of the invention.
  • a photon having a component having a component and having a carrier and collecting a carrier generated in the conductor region by irradiation of the surface as a current.
  • the amount of hugging is aimed at the resistance b 2 ⁇ c of the base, the gas pressure is adjusted to O Pa, and the gas amount at the melting and process is set as a parameter. Made. Since the gas pressure is fixed, it means that the amount of gas is large without any problem.
  • the manufactured ins were manufactured by cutting and slicing processes, and a plate-shaped sheet with a thickness of about 3 and a size of 55 was prepared.
  • Device preparation is as follows. The sample was collected from the 2nd to 8th period in the int. here,
  • the area is defined as the area in the direction of the in and the most solid in, the solid in and the part.
  • No. 4 was designed as PC diffusion with the aim of having a resistance of 65.
  • the electrodes were printed using a silver-based strike. In addition, the electrode is parallel to the length of 2 The width was set to 2 and the length was set parallel to the length of 63. Regardless of the production of the pups, the samples were collected in approximately the same range, and the results were confirmed by averageness and yield.
  • the impurity analysis was prepared by sampling 5 positions in the above-mentioned in and, and the oxygen concentration and elementary concentration were measured with SS and the average value of 4 points excluding the c width was taken as the concentration.
  • SS accelerates and irradiates the sample with a fine primary ion beam (Cs, etc., this time Cs) in a vacuum, and the secondary ions are ejected from the surface by the staging.
  • Cs coarse primary ion beam
  • the analysis is ⁇ law. Calculate absoluteness by comparing sump. The times are as follows.
  • Table 2 shows the experimental results of the new method explained using 0147 dishes and 2.
  • the cast ins are processed by cutting and slicing, and the thickness is about 25
  • a plate of size 5 X 55 was prepared.
  • microscopic light analysis, SS analysis, and 2 46 and 8 positions in each of the ins obtained by casting were extracted.
  • the analysis was performed in four areas that were arranged at almost equal intervals in the area excluding the c width, and the average value in these four areas was taken as the value for each position. .
  • the average value of the three points in the above range was taken as that range.
  • the part When the light is irradiated to the quality, the part is scattered. This is due to the particles that are smaller than the wavelength of the light, and is due to the random effect of the fluctuation of the wavelength. Since the difference in length between the incident light and the run corresponds to the difference between the molecular motion and the dynamic negation, a vibrational spectrum can be obtained. This makes it possible to obtain information on the production and production of substances.
  • the run is particularly small. The following is used.
  • SS (econda on Mass pe oe, secondary ion content analysis) accelerates and irradiates a sample with a small primary ion beam (such as, cesium, etc., this time Cs) in a vacuum.
  • This method is a mass spectrometry method in which secondary ions are extracted by an electric field and the absolute degree can be obtained by comparing standard samples. The following is used.
  • the (external spectrophotometer) is composed of interference, sample, detection unit and data processing unit.
  • the light that comes out goes into the air and passes through the material as interference.
  • a certain number of light beams corresponding to the onions of the molecules or atomic groups in the molecules constituting the sample are absorbed. Obtained in
  • the electrodes were made by printing using a strike consisting mainly of silver. At this time, the furnace was used and the fire method was applied. In addition, the electrode was a tongue in which a length of 55 and a width of 3 were placed parallel to the length of 55, and a width of b of b was placed in parallel with the length of 63.
  • Lithium concentration (average value, obtained by s s analysis. A oms cm.
  • a Elementary concentration (, average value). a oms cm. As the value of A increases, oxygen is released in the form of so, increasing its volume and It is thought to be life-long.
  • a method of adjusting these properties was used by using 35 sheets collected from the 2-8 range.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention décrit un substrat de silicium polycristallin pour des convertisseurs photoélectriques qui présente une région où la concentration d’impuretés d’oxygène satisfait la relation suivante : [O] < 1E16 [atomes/cm3] (1), où [O] représente la concentration totale en oxygène déterminée par spectroscopie de masse des ions secondaires, [Oi] représente la concentration interstitielle en oxygène déterminée par spectroscopie à l’infrarouge avec transformation de Fourier et [O] = [O] - [Oi].
PCT/JP2006/303638 2005-02-28 2006-02-27 Substrat de silicium polycristallin, lingot de silicium polycristallin, leurs procédés de fabrication, convertisseur photoélectrique et module de conversion photoélectrique WO2006093099A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005-055219 2005-02-28
JP2005055219 2005-02-28
JP2005-114896 2005-04-12
JP2005114896 2005-04-12

Publications (1)

Publication Number Publication Date
WO2006093099A1 true WO2006093099A1 (fr) 2006-09-08

Family

ID=36941128

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/303638 WO2006093099A1 (fr) 2005-02-28 2006-02-27 Substrat de silicium polycristallin, lingot de silicium polycristallin, leurs procédés de fabrication, convertisseur photoélectrique et module de conversion photoélectrique

Country Status (1)

Country Link
WO (1) WO2006093099A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006104107A1 (ja) * 2005-03-29 2008-09-11 京セラ株式会社 多結晶シリコン基板及びその製造方法、多結晶シリコンインゴット、光電変換素子、並びに光電変換モジュール
WO2008131794A1 (fr) * 2007-04-27 2008-11-06 Freiberger Compound Materials Gmbh Dispositif et procédé destinés à produire du silicium polycristallin ou multicristallin; lingot et tranche de silicium polycristallin ou multicristallin
WO2009014963A1 (fr) * 2007-07-20 2009-01-29 Bp Corporation North America Inc. Procédés et appareils destinés à fabriquer du silicium coulé à partir de germes cristallins
US8048221B2 (en) 2006-01-20 2011-11-01 Stoddard Nathan G Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
JP2014053470A (ja) * 2012-09-07 2014-03-20 Kobe Steel Ltd 半導体キャリア寿命測定装置および該方法
WO2024053092A1 (fr) * 2022-09-09 2024-03-14 京セラ株式会社 Bloc de silicium de type n et substrat de silicium de type n

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998016466A1 (fr) * 1996-10-14 1998-04-23 Kawasaki Steel Corporation Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire
JP2001048518A (ja) * 1999-06-17 2001-02-20 Bayer Ag 構造化される酸素のドープを伴うシリコン、その製法及び使用法
JP2002164290A (ja) * 2000-11-28 2002-06-07 Tokuyama Corp 多結晶シリコン膜の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998016466A1 (fr) * 1996-10-14 1998-04-23 Kawasaki Steel Corporation Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire
JP2001048518A (ja) * 1999-06-17 2001-02-20 Bayer Ag 構造化される酸素のドープを伴うシリコン、その製法及び使用法
JP2002164290A (ja) * 2000-11-28 2002-06-07 Tokuyama Corp 多結晶シリコン膜の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MÖLLER H.J.: "Multicrystalline Silicon for Solar Cells", SOLID STATE PHENOMENA, vol. 47 / 48, 1996, pages 127 - 142, XP003005872 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006104107A1 (ja) * 2005-03-29 2008-09-11 京セラ株式会社 多結晶シリコン基板及びその製造方法、多結晶シリコンインゴット、光電変換素子、並びに光電変換モジュール
US8048221B2 (en) 2006-01-20 2011-11-01 Stoddard Nathan G Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
US8628614B2 (en) 2006-01-20 2014-01-14 Amg Idealcast Solar Corporation Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
US8951344B2 (en) 2006-01-20 2015-02-10 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics
WO2008131794A1 (fr) * 2007-04-27 2008-11-06 Freiberger Compound Materials Gmbh Dispositif et procédé destinés à produire du silicium polycristallin ou multicristallin; lingot et tranche de silicium polycristallin ou multicristallin
US9103048B2 (en) 2007-04-27 2015-08-11 Frieberger Compound Materials Gmbh Device and process for producing poly-crystalline or multi-crystalline silicon; ingot as well as wafer of poly-crystalline or multi-crystalline silicon produced thereby, and use for the manufacture of solar cells
WO2009014963A1 (fr) * 2007-07-20 2009-01-29 Bp Corporation North America Inc. Procédés et appareils destinés à fabriquer du silicium coulé à partir de germes cristallins
JP2010534179A (ja) * 2007-07-20 2010-11-04 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 種結晶から鋳造シリコンを製造するための方法および装置
JP2014053470A (ja) * 2012-09-07 2014-03-20 Kobe Steel Ltd 半導体キャリア寿命測定装置および該方法
WO2024053092A1 (fr) * 2022-09-09 2024-03-14 京セラ株式会社 Bloc de silicium de type n et substrat de silicium de type n

Similar Documents

Publication Publication Date Title
Zeng et al. In situ TEM study of the Li–Au reaction in an electrochemical liquid cell
Liao et al. Enhanced efficacy of defect passivation and charge extraction for efficient perovskite photovoltaics with a small open circuit voltage loss
WO2006093099A1 (fr) Substrat de silicium polycristallin, lingot de silicium polycristallin, leurs procédés de fabrication, convertisseur photoélectrique et module de conversion photoélectrique
JP4131965B2 (ja) Ｃｉｓ系薄膜太陽電池の光吸収層の作製方法
Gu et al. Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: Towards high efficiency and low cost silicon solar cells
Liu et al. Kesterite Cu2ZnSn (S, Se) 4 solar cells with beyond 8% efficiency by a sol–gel and selenization process
JP5010468B2 (ja) 光電変換素子とその製造方法、及びこれを用いた光電変換モジュール
US20090266396A1 (en) Polycrystalline Silicon Substrate, Method for Producing Same, Polycrystalline Silicon Ingot, Photoelectric Converter and Photoelectric Conversion Module
Zhang et al. Thermal properties of glass frit and effects on Si solar cells
Eid et al. Combinatorial study of NaF addition in CIGSe films for high efficiency solar cells
Hayes et al. Impurity gettering by boron‐and phosphorus‐doped polysilicon passivating contacts for high‐efficiency multicrystalline silicon solar cells
Sun et al. Promoting carrier collection by DMF/DMSO binary solvent for efficient kesterite solar cells
Flores-Pacheco et al. Down-shifting by quantum dots for silicon solar cell applications
Yuan et al. Novel Ag-doped glass frits for high-efficiency crystalline silicon solar cells
Probst et al. A new mass production technology for high-efficiency thin-film CIS-absorber formation
CN108832081A (zh) 一种使金属锂横向生长的复合金属锂负极的制备方法
Chihi et al. Characterization and photoelectrochemical properties of CICS thin films grown via an electrodeposition route
CN202450193U (zh) 一种激光制绒设备
JP2010123999A (ja) 太陽電池用ペースト材及び太陽電池の製造方法
Jin et al. Pulsed laser deposition of Cu2ZnSn (SxSe1− x) 4 thin film solar cells using quaternary oxide target prepared by combustion method
Joonwichien et al. Enhanced phosphorus gettering of impurities in multicrystalline silicon at low temperature
Wang et al. Depth Profile of Impurity Phase in Wide-Bandgap Cu (In 1− x, Ga x) Se 2 Film Fabricated by Three-Stage Process
Cao et al. Antimony-induced grain growth and properties modification of Cu (In, Al) Se2 thin films fabricated by selenization of sputtered stacked precursors
Jang et al. Large Grains and Shallow Defect States by Early Crystal Growth Suppression for High Responsivity in Perovskite Photodetectors
WO2007010622A1 (fr) Substrat de silicium polycristallin, son procédé de fabrication, élément de conversion photoélectrique, et module de conversion photoélectrique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06714775

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP