WO2006073165A1 - Composant a semi-conducteur et procede et dispositif pour sa fabrication - Google Patents

Composant a semi-conducteur et procede et dispositif pour sa fabrication Download PDF

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Publication number
WO2006073165A1
WO2006073165A1 PCT/JP2006/300053 JP2006300053W WO2006073165A1 WO 2006073165 A1 WO2006073165 A1 WO 2006073165A1 JP 2006300053 W JP2006300053 W JP 2006300053W WO 2006073165 A1 WO2006073165 A1 WO 2006073165A1
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laser
semiconductor device
crystal
irradiation
semiconductor film
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PCT/JP2006/300053
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English (en)
Japanese (ja)
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Junichiro Nakayama
Ikumi Itsumi
Tetsuya Inui
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Sharp Kabushiki Kaisha
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Publication of WO2006073165A1 publication Critical patent/WO2006073165A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor

Definitions

  • the present invention relates to a semiconductor device obtained by crystallizing an amorphous semiconductor material using a laser, a method of manufacturing the same, and a manufacturing apparatus.
  • a thin film transistor in which a semiconductor device is formed on a thin film material is used for a display unit and a pixel controller in an active matrix liquid crystal display device, and an amorphous material is mainly used as the thin film material. ing. Furthermore, in order to drive the TFT at high speed, conventionally, an amorphous semiconductor film is used, and the material characteristic is improved by crystallizing the channel region. This is because the mobility of carriers in the entire portion of the atomic arrangement of crystals is several hundred times greater than that in the amorphous portion. In the case of a polycrystal, carriers are scattered at grain boundaries, so it is desirable to make the grains larger and to be single crystals in the channel region.
  • FIGS. 8A to 8B Crystals formed by lateral growth will be described using FIGS. 8A to 8B.
  • 8A-8B are front views of a film crystallized using the lateral crystal growth method
  • FIG. 8A is a crystal when using a mask with a small width
  • FIG. 8B is a size! / Width
  • a laser beam is pulsed to the amorphous semiconductor film using a mask to completely melt this region. Thereafter, the melted semiconductor film is re-solidified by cooling, but at this time, a force near the boundary with the solidified solid portion also causes peculiar crystallization of the crystal length L1 in the lateral direction. As shown in FIG.
  • These lateral crystals 71, 72 are large single crystals having a length from the completely melted end to the ridge 73, and when this direction is taken in the TFT channel direction, the grains are perpendicular to the carrier flow. There is no world !, so good characteristics can be obtained.
  • the SLS method is a method for further extending the crystal length, and as shown in JP-A 2000-505241 (patent document 1), lateral crystallization can be continued using this crystal as a seed. s
  • FIGS. 9A to 9D are front views of films crystallized using the S LS method.
  • the laser irradiation portion is shifted by moving (shifting) the sample (amorphous semiconductor film) by a distance L2 with respect to the rectangular mask laser and irradiating the laser.
  • 83 melts completely and resolidifies.
  • FIG. 9B since a single preceding crystal grain is taken over as a seed, a large single crystal of crystal length L 2 + crystal length L 3 can be obtained.
  • FIGS. 9C and 9D by repeating this shift and laser irradiation, a single crystal of a desired length can be obtained.
  • the ridge in the last region where the laser irradiation is repeated remains, which poses a problem for the subsequent device fabrication process.
  • a film such as a gate portion or a contact portion is deposited on a region including a ridge portion of a semiconductor film
  • the film thickness is limited, and the possibility of degradation of the characteristics is further increased. It is also an obstacle in terms of micronization.
  • Patent Document 2 a laser beam intensity modulation using an attenuator is proposed in Japanese Patent Application Laid-Open No. 2003-509845.
  • Patent Document 3 discloses a method for irradiating light passing through a mask below the diffraction limit in order to reduce the height of the ridge in the region crystallized by the SLS method. Have been described. In this method, light is irradiated to the entire crystallized region, so that the protrusions are reduced but the surface irregularities become large, which may cause deterioration of the TFT characteristics. In addition, it is necessary to limit the direction of crystallization to one direction.
  • Patent Document 1 JP 2000-505241
  • Patent Document 2 Japanese Patent Application Publication No. 2003-509845
  • Patent Document 3 Japanese Patent Application Laid-Open No. 2003-309080
  • the present invention has been made to solve the above problems, and is a novel method capable of reducing the surface protrusion height (ridge) in the last region where laser irradiation is repeated in the SLS method.
  • An object of the present invention is to provide a method of manufacturing a semiconductor device, a manufacturing apparatus, and a semiconductor device manufactured by them.
  • the semiconductor device of the present invention has a basic structure in which a semiconductor film is formed on a substrate.
  • the semiconductor film is characterized in that it has a laterally grown crystal, and the height of the surface protrusion is smaller than the thickness of the semiconductor film at the end of the laterally grown crystal.
  • the laterally grown crystal is preferably a crystal grown by laser irradiation to the semiconductor film.
  • the laterally grown crystal is laterally bonded to the laser irradiation by the laser irradiation. It is preferable that the region is a region where crystal growth is expanded by moving stepwise in the surface direction of the semiconductor film so as to inherit the crystal-grown portion and inheriting the crystal of the portion.
  • the laterally grown crystal is formed by utilizing light having passed through a slit or pattern below the diffraction limit of the surface protrusion height force at the end of the transverse crystal growth. It is preferable that the film thickness of the semiconductor film be made lower by irradiating a laser having an energy lower than that of the above-mentioned laser.
  • a semiconductor device is characterized in that the laser having energy lower than that of the laser for forming the laterally grown crystal is any one of the following (1) to (3): The power of being produced by using is more preferable!
  • the semiconductor device is used at the position of final irradiation when laser irradiation is performed stepwise.
  • laser irradiation for crystal growth in the lateral direction in the semiconductor film may be performed by stepwise moving so as to take over a portion of the semiconductor film on which crystal growth has been performed. preferable.
  • a laser having energy lower than that of the laser for forming the laterally grown crystal is
  • the semiconductor device is used at the position of final irradiation when laser irradiation is performed stepwise.
  • a mask having a slit or pattern below the diffraction limit is used to perform laser irradiation with energy lower than that of the laser crystal grown in the lateral direction. It is preferred to control the energy dose by using
  • the present invention also provides a semiconductor device manufacturing apparatus suitably used for the above-described method of manufacturing a semiconductor device of the present invention.
  • the semiconductor device manufacturing apparatus of the present invention is characterized by including a first laser oscillator, a second laser oscillator, and a controller for controlling these two laser oscillators.
  • the energy of the laser generated from the second laser oscillator is lower than the energy of the laser generated by the first laser oscillator.
  • the wavelength of the laser generated from the first laser oscillator is a wavelength which is easily absorbed by the semiconductor film
  • the wavelength of the laser generated by the second laser oscillator is a substrate or a semiconductor film in a melted state. It is more preferable that the wavelength is easily absorbed by
  • the semiconductor film formed on the substrate is irradiated with a laser to cause the semiconductor film to grow laterally and to grow crystals laterally, which is lower than the laser which is caused to grow crystals laterally.
  • a laser In the method of manufacturing a semiconductor device in which the height of the surface protrusion at the end of the laterally grown crystal is made smaller than the film thickness of the semiconductor film by irradiating a laser of Also provided is a mask, characterized in that it has slits or patterns below the diffraction limit, which are used for the laser irradiation of energy.
  • a semiconductor film formed on a substrate is irradiated with a laser, and the semiconductor film is laterally grown by laterally growing crystals, and energy is lower than that of the laser grown by laterally growing crystals.
  • a manufacturing apparatus comprising a mask having the following slits or patterns.
  • the method of manufacturing a semiconductor device, the mask, and the apparatus for manufacturing a semiconductor device of the present invention it is not necessary to require an apparatus such as an attenuator or a driving system thereof unlike the prior art. It is possible to provide a semiconductor device in which the height of the surface protrusions at the end of crystallization which is not so serious is smaller than the thickness of the semiconductor film.
  • Such a semiconductor device has an effect of improving the TFT characteristics as compared with the conventional one. More specifically, it is effective in reducing the threshold voltage, reducing the variation in threshold voltage, and reducing the subthreshold coefficient.
  • process point of view also makes it possible to thin the film thickness of the gate oxide film by eliminating the protrusion at the end of crystallization, which improves throughput and further improves TFT characteristics. It will be possible.
  • FIG. 1 is a schematic cross-sectional view of a semiconductor device of the present invention.
  • FIG. 2A is a plan view of a semiconductor film crystal in the semiconductor device of the present invention.
  • FIG. 2B is a cross-sectional view of the semiconductor film in the semiconductor device of the present invention.
  • FIG. 3A is a view schematically showing a mask preferably used in the method of manufacturing a semiconductor device of the present invention.
  • FIG. 3B is a view schematically showing a mask preferably used in the method of manufacturing a semiconductor device of the present invention.
  • FIG. 3C is a view schematically showing a mask suitably used in the method of manufacturing a semiconductor device of the present invention.
  • FIG. 3D is a view schematically showing a mask suitably used for the method for manufacturing a semiconductor device of the present invention.
  • FIG. 4A is a view schematically showing a suitable laser light irradiation method in the method of manufacturing a semiconductor device of the present invention.
  • FIG. 4B is a view schematically showing a suitable laser light irradiation method in the method of manufacturing a semiconductor device of the present invention.
  • FIG. 5 is a diagram conceptually showing an example of an apparatus that can be used in the method of manufacturing a semiconductor device of the present invention.
  • FIG. 6 A diagram conceptually showing a preferred example of a semiconductor device manufacturing apparatus of the present invention.
  • FIG. 7 is a graph illustrating an outline of a relationship between irradiation time and output (irradiance) of the first laser beam and the second laser beam in the semiconductor device manufacturing apparatus of the present invention.
  • FIG. 8A is a plan view of a film crystallized using a lateral crystal growth method.
  • FIG. 8B is a plan view of a film crystallized using a crystal lateral growth method.
  • FIG. 9A is a plan view of a film crystallized using SLS method.
  • FIG. 9B is a plan view of a film crystallized using SLS method.
  • FIG. 9C is a plan view of a film crystallized using SLS method.
  • FIG. 9D is a plan view of a film crystallized using an SLS method.
  • FIG. 10 is a cross-sectional view of a semiconductor film in a conventional semiconductor device.
  • FIG. 11 is a view schematically showing a conventional mask.
  • FIG. 12 is a view schematically showing a conventional laser light irradiation method.
  • FIG. 1 is a schematic cross-sectional view of a semiconductor device 5 of the present invention.
  • the semiconductor device 5 of the present invention has a basic structure in which the semiconductor film 3 is formed on the substrate 1, and preferably, the base insulating layer 2 is formed between the substrate 1 and the semiconductor film 3 as shown in FIG. Be intervened.
  • Base insulating layer 2 can be formed of a material such as silicon oxide or silicon nitride conventionally used in the art, for example, by the CVD method, and is not particularly limited. . Above all, it is preferable to form the base insulating layer 2 of silicon oxide since it is the same component as the glass substrate and various physical properties such as the thermal expansion coefficient are almost equal.
  • the thermal influence of the molten precursor semiconductor thin film is made to affect, for example, an insulating substrate such as a glass substrate mainly during melting and recrystallization by laser light.
  • insulating substrate force for example a glass substrate, can also prevent impurity diffusion into the precursor semiconductor thin film.
  • the thickness of the base insulating layer 2 is preferably about 50 to 200 nm, but is not limited thereto.
  • the base insulating film 2 can be formed on the substrate 1 by depositing the material by plasma enhanced chemical vapor deposition (PECVD), vapor deposition, sputtering, or the like.
  • the semiconductor film 3 in the semiconductor device 5 of the present invention is not particularly limited as long as it is a conventionally known one exhibiting semiconductor characteristics, but the crystal growth length is increased by lateral crystal growth by laser irradiation described later.
  • the force formed by using an amorphous silicon film which can significantly improve various properties by the above is preferable.
  • the semiconductor film 3 is not limited to a semiconductor film formed of an amorphous material such as amorphous silicon, but may be a crystalline semiconductor film such as microcrystalline or polycrystal.
  • the material of the semiconductor film 3 may be a material mainly composed of silicon containing other elements such as germanium, which is not limited to a material which can only exert silicon.
  • the semiconductor film 3 is formed by deposition such as plasma enhanced chemical vapor deposition (PECVD), catalytic chemical vapor deposition (Cat-CVD), vapor deposition, or sputtering so as to have a film thickness of 10 to: LOO nm. can do.
  • PECVD plasma enhanced chemical vapor deposition
  • Cat-CVD catalytic chemical vapor deposition
  • vapor deposition or sputtering so as to have a film thickness of 10 to: LOO nm. can do.
  • the semiconductor film 3 has a laterally grown crystal.
  • the lateral direction means a direction substantially parallel to the surface of the semiconductor film. That is, in the semiconductor film, the crystal growth direction mainly includes the plane direction of the semiconductor film and the thickness direction of the semiconductor film, and among these, the plane direction is meant.
  • the semiconductor device 5 of the present invention is characterized in that the surface projection height at the end of the laterally grown crystal of the semiconductor film 3 is lower than the film thickness of the semiconductor film.
  • the surface protrusion height refers to the maximum height of the protrusion at the end, and using AFM (atomic force microscope)
  • AFM atomic force microscope
  • the surface shape of the 20 um x 20 um region can be measured and calculated as an average value of the maximum height of 5 points or more.
  • the film thickness of the semiconductor film refers to the average thickness of the semiconductor film, which is formed as an area where the semiconductor film is formed using an atomic force microscope (AFM) or a stylus type profilometer. The level difference with the region can be measured and calculated.
  • AFM atomic force microscope
  • the TFT characteristics are improved compared to the prior art. is there. More specifically, it is effective to reduce the threshold voltage, to reduce the variation of the threshold voltage, and to reduce the subthreshold coefficient. Also, from the process point of view, the absence of protrusions at the end of the crystallization makes it possible to thin the film thickness of the gate oxide film, thereby improving throughput and TFT characteristics. Further improvement is possible.
  • FIG. 2A is a plan view of a semiconductor film crystal in the semiconductor device of the present invention
  • FIG. 2B is a cross-sectional view of the semiconductor film in the semiconductor device of the present invention
  • FIG. 10 is a cross-sectional view of the semiconductor film in the conventional semiconductor device.
  • the semiconductor device of the present invention for example, when the semiconductor film thickness is 50 nm, the surface protrusion height H at the end of the laterally grown crystals 11 and 12 is 30 nm (FIG. 2B).
  • the surface protrusion height H at the end of the laterally grown crystal 91, 92 of the conventional semiconductor device is 50 nm (FIG. 10).
  • the surface protrusion height H is reduced from the conventional 50 nm to 30 nm, which is lower than the thickness of the semiconductor film.
  • the height of the surface protrusions can be controlled by the mask pattern and the amount of energy can be further reduced, and the area other than the ridges is extremely flat and has few irregularities, specifically, few protrusions of 10 nm or more. And crystals can also be obtained.
  • the semiconductor device of the present invention is not particularly limited as long as the surface protrusion height is smaller than the film thickness of the semiconductor film, but the gate oxide film formed on the semiconductor film is not limited. Since the film thickness is about 100 nm and there is a possibility that current will leak and it will not operate as a TFT if the gate oxide film is pierced, the difference between the surface protrusion height and the film thickness of the semiconductor film is 150 nm or less. Is preferred. Moreover, if the film thickness of the gate oxide film is not constant, the threshold voltage may vary, and the surface protrusion height is required so as not to change the film thickness of the gate oxide film. The difference between the height of the protrusions and the thickness of the semiconductor film is more preferably 100 nm or less.
  • the threshold voltage is in inverse proportion to the thickness of the gate oxide film
  • the gate oxide film is in the direction in which the thin film is deposited, and for this purpose, the height of the surface protrusion needs to be as low as possible. From the viewpoint of this, it is particularly preferable that the difference between the height of the surface protrusions and the film thickness of the semiconductor film is 50 nm or less.
  • the semiconductor device of the present invention is not limited to one manufactured by the method of manufacturing a semiconductor device of the present invention as long as it has the above-mentioned features.
  • a step of irradiating a semiconductor film formed on a substrate with a laser to grow crystals laterally in the semiconductor film, and performing the crystal growth in the lateral direction are performed. Irradiating a laser of lower energy to make the surface protrusion height at the end of the laterally grown crystal lower than the film thickness of the semiconductor film.
  • the first step of the method of manufacturing a semiconductor device of the present invention first, a semiconductor film formed on a substrate by irradiating a semiconductor film with a laser using the SLS method which is a conventionally known method. Form laterally grown crystals.
  • the crystal growth direction mainly includes the plane direction of the semiconductor film and the thickness direction of the semiconductor film, and the “lateral direction” refers to the plane direction among them as described above.
  • the laser irradiation for crystal growth in the lateral direction be performed stepwise so as to take over the portion of the semiconductor film on which the crystal is grown.
  • “perform laser irradiation in a stepwise manner” means that the next laser pulse is irradiated so as to inherit the lateral crystal growth generated by one laser pulse, and the crystal growth generated by the laser pulse is inherited. It refers to irradiating the next laser pulse.
  • by performing laser irradiation stepwise it is possible to take over the form of the crystal generated by the first laser irradiation, so that a single crystal can be formed.
  • the ridge formed by the previous laser pulse irradiation can be removed by the next laser pulse irradiation.
  • the ridge formed by the previous laser pulse irradiation can be removed by the next laser pulse irradiation.
  • the subsequent step a laser having a lower energy than that of the laterally grown crystal is irradiated to make the surface protrusion height at the end of the laterally grown crystal lower than the film thickness of the semiconductor film. .
  • the height of the surface protrusions is generated at the end of the crystal growth, as described above.
  • the height of such surface protrusions can be made lower than the semiconductor film thickness. That is, in the method of manufacturing a semiconductor device of the present invention, the semiconductor film can not be completely melted in the entire film thickness direction by laser irradiation with low energy, and only the upper portion of the film is partially melted. As a result, many crystal nuclei are generated at the solid-liquid interface, and microcrystalline growth occurs in the film toward the lower surface. By thus recrystallizing by a mechanism different from that in the lateral direction, the height of surface protrusions can be made sufficiently low. Also, as described later, this is characterized in that the advantage of using a laser having a large absorption coefficient in a semiconductor film is further utilized.
  • irradiation of the laser with energy lower than that of the laterally crystal-grown laser is used as in any one of the following (1) to (3): And more preferred. (1) Used in final irradiation when laser irradiation is performed stepwise on a semiconductor device
  • the semiconductor device is used at the position of final irradiation when laser irradiation is performed stepwise.
  • the laser irradiation of a lower energy than that of the laterally crystal-grown laser is used in (1) final irradiation in stepwise laser irradiation of a semiconductor device, thereby achieving the final crystal growth in the lateral direction.
  • the time of irradiation only the upper part of the film is partially melted, many crystal nuclei are generated at the solid-liquid interface, and recrystallization is performed by a mechanism different from the lateral direction in the film, so that the surface protrusion height is sufficiently low. can do.
  • the laser irradiation with energy lower than that of the laterally crystal-grown laser is used, and (2) the final irradiation power in the case of stepwise laser irradiation on the semiconductor device is used rather than the irradiation before the step.
  • the final irradiation power is also several stages before the laser irradiation, and it is preferable to also irradiate the stage power two to three stages before the final irradiation, but it is not limited to these. In order to achieve the purpose of making the surface projection height lower than the film thickness by using it, it is preferable to design appropriately.
  • the laser irradiation with energy lower than that of the laser crystal grown in the lateral direction is used at the position of the final irradiation when the laser irradiation is performed stepwise on the semiconductor device. It is possible to reduce the protrusion only at the ridge that has no influence on the
  • FIGS. 3A to 3D are diagrams schematically showing masks preferably used in the method for manufacturing a semiconductor device of the present invention.
  • FIG. 11 is a view schematically showing a conventional mask.
  • a thin pattern 31 (FIG. 3A) or Preferably, the energy dose is controlled using a mask having slits or patterns 32 (FIG. 3B), 33 (FIG. 3C), 34 (FIG. 3D) below the diffraction limit.
  • the diffraction limit is determined by the wavelength of the excimer laser and the optical system, and is generally given by ⁇ , which is about 1 to 3 ⁇ m.
  • the pattern below the diffraction limit has a shape of about 2 um or less, for example, in the case of an apparatus having an excimer laser having a diffraction limit of about 3 um and an optical system. If it becomes smaller than the diffraction limit, the amount of transmitted light decreases and the energy decreases, so if it is too small, the effect may be lost. From this point of view, the diffraction limited 1Z 4 to 3Z 4 sizes are preferable.
  • the projection can be deformed into a desired shape by well combining the fine pattern and the pattern below the diffraction limit in comparison with the conventional slit pattern. It is possible.
  • a semiconductor film is irradiated with a laser to grow a crystal in the lateral direction using the SLS method, crystallization is performed so that the scanning direction of the stage and the lateral growth direction of the crystal are almost perpendicular.
  • the center line of the mask area having slits or patterns below or equal to the diffraction limit of light is colinear with the center line of the immediately preceding mask area.
  • a slit or pattern below the diffraction limit of the light may have back and forth (FIG. 4A) or a slit pattern according to the position of the final irradiation.
  • FIG. 4A use a mask that has a fine pattern or a pattern below the diffraction limit by switching back and forth (Fig. 4B).
  • FIG. 4A in the case of having a pattern in front and back, since light passing through a mask below the diffraction limit is irradiated before transverse crystallization, there is an effect that unevenness can be further reduced.
  • FIG. 12 schematically shows an example of conventional laser light irradiation as a comparison.
  • the laser beam used in the method for producing a semiconductor film of the present invention preferably has a large absorption coefficient in the semiconductor film so as not to affect the substrate. More specifically, it is preferable to have a wavelength in the ultraviolet range. For example, an excimer laser pulse having a wavelength of 308 nm can be mentioned.
  • the excimer laser necessary for the SLS method The energy content of is 2 to 8 kj / m 2 .
  • the energy amount of the excimer laser at the time of irradiation of a laser with a lower energy than that of the laterally crystal-grown laser is 0.5 to 4 kjZm 2 .
  • the laser beam used in the method for producing a semiconductor thin film of the present invention is an amount of energy per irradiation area for melting the semiconductor film in a solid state per one irradiation, specifically a semiconductor film. It is preferable to have an amount of energy that can be heated to a temperature above the melting point in the entire film thickness.
  • the amount of energy varies depending on the type of the material of the semiconductor film, the film thickness of the semiconductor film, the area of the crystallization region, etc. and can not be uniquely determined. Therefore, use laser light having an appropriate energy amount as appropriate. Hoped.
  • FIG. 5 is a diagram conceptually showing an example of an apparatus that can be used for the method of manufacturing a semiconductor device of the present invention described above.
  • the example device shown in FIG. It includes an exciter 42, a variable attenuator 43, a field lens 44, a mask 45, an imaging lens 46, a sample stage 47 and several mirrors, as well as uniform illumination optics. These members are controlled by the controller 41.
  • a radiation pulse can be supplied to the semiconductor device 5 on the stage 47.
  • laser energy can be attenuated by using a mask having a slit or a pattern below the diffraction limit of light as the mask 45 with respect to the laser light irradiated to the ridge.
  • a mask having a slit or a pattern below the diffraction limit of light as the mask 45 with respect to the laser light irradiated to the ridge.
  • FIG. 6 is a view conceptually showing a preferable example of the semiconductor device manufacturing apparatus of the present invention.
  • the present invention is an apparatus suitably used for the method of manufacturing a semiconductor device of the present invention described above, which is a controller for controlling a first laser oscillator 52, a second laser oscillator 58, and these two laser oscillators. And an apparatus for producing a semiconductor device.
  • the laser by the first laser oscillator 52 is used for irradiation for lateral crystal growth of the semiconductor film, and the second laser oscillator is used.
  • the laser according to 58 is used as an assist laser for suppressing the temperature drop of the melted semiconductor film.
  • the wavelength of the laser (first laser beam) generated from the first laser oscillator is a wavelength at which the semiconductor film (semiconductor film in the solid state) is easily absorbed. It is preferable that the wavelength of the laser (second laser beam) generated by the second laser oscillator is a wavelength that is easily absorbed by the substrate or the semiconductor film in a molten state.
  • a first laser beam for example, an excimer laser pulse having a wavelength of 308 nm can be mentioned.
  • the second laser light a YAG laser with a wavelength of 532 nm, a YAG laser with a wavelength of 10 64 nm, a carbon dioxide gas laser with a wavelength of 10.6 m, etc. may be mentioned.
  • the total of the first and second laser light energy used in the apparatus for manufacturing a semiconductor film of the present invention is the amount of energy capable of melting the semiconductor film in a solid state per one irradiation, per irradiation area. It is preferable to have.
  • the first laser beam is per irradiated area
  • the amount of energy varies depending on the type of the material of the semiconductor film, the film thickness of the semiconductor film, the area of the crystallization region, and the like, and can not be uniquely determined. Therefore, in the above-described method of manufacturing a semiconductor device of the present invention It is desirable to adopt a laser beam having an appropriate amount of energy as appropriate in accordance with the mode to be applied.
  • the amount of energy of the first laser required for the SLS method is 1 to 5 kjZm 2 and the amount of energy of the second laser is 0.5 to 4 kj Zm 2 It is.
  • FIG. 7 is a graph showing an outline of the relationship between the irradiation time of the first laser beam and the second laser beam and the output (irradiance) in the semiconductor device manufacturing apparatus of the present invention.
  • the horizontal axis represents time (hour), and the vertical axis represents output (unit: WZm 2 ).
  • the graph of the first laser beam is indicated by reference numeral 61, and the graph of the second laser beam is indicated by reference numeral 62.
  • the second laser is realized to emit at high power between the times tl and t2, and to emit the other at low power.
  • tl ⁇ t2.
  • the relationship between the irradiation time of the first laser beam and the second laser beam and the output is not particularly limited to this relationship.
  • the time tl may be a positive value or a negative value. That is, the irradiation start time of the second laser beam may be before or after the irradiation start time of the first laser beam.
  • Such first laser light and The irradiation of the second laser beam is realized by being appropriately controlled by the controller 51.
  • the controller 51 conventionally known appropriate control means can be used without particular limitation.
  • FIGS. 3A to 3D show the force of a mask suitably used in the method of manufacturing a semiconductor device of the present invention.
  • a mask is also novel and is included in the present invention. . That is, according to the present invention, the semiconductor film formed on the substrate is irradiated with a laser so that the semiconductor film is laterally grown and the crystal is laterally grown, and the crystal is laterally grown lower than the laser!
  • an energy laser which is lower than the laterally grown crystal laser
  • a mask characterized by having a slit or pattern below the diffraction limit, which is used to perform laser irradiation of energy.
  • the present invention further provides a manufacturing apparatus provided with the above mask. That is, according to the present invention, a semiconductor film formed on a substrate is irradiated with a laser to grow crystals in the lateral direction in the semiconductor film, and a laser having energy lower than that of the laser grown in the lateral direction is irradiated. In the method of manufacturing a semiconductor device, in which the height of the surface protrusion at the end of the laterally grown crystal is made smaller than the film thickness of the semiconductor film, laser irradiation with energy lower than that of the laterally grown crystal is performed. Also provided is a manufacturing apparatus comprising a mask having a slit or pattern below the diffraction limit, which is used for

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Abstract

L'invention se rapporte à un composant à semi-conducteur (5) comportant un film semi-conducteur (3) sur un substrat (1), lequel est caractérisé en ce que le film semi-conducteur (3) comporte un cristal que l'on a fait croître latéralement et en ce que la hauteur de protubérance de surface au niveau d'une section de bordure du cristal que l'on a fait croître latéralement est inférieure à l'épaisseur du film semi-conducteur (3). L'invention fournit un procédé et un dispositif destinés à fabriquer le composant à semi-conducteur (5) grâce auxquels la hauteur de la protubérance de surface (la nervure), dans une dernière région où une irradiation par laser est répétée par un procédé de type SLS, peut être réduite et elle fournit le composant à semi-conducteur fabriqué par le procédé et le dispositif.
PCT/JP2006/300053 2005-01-07 2006-01-06 Composant a semi-conducteur et procede et dispositif pour sa fabrication WO2006073165A1 (fr)

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JP2005002865A JP2006190897A (ja) 2005-01-07 2005-01-07 半導体デバイス、その製造方法および製造装置
JP2005-002865 2005-01-07

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001147446A (ja) * 1999-11-19 2001-05-29 Hitachi Ltd 液晶表示装置とその製造方法
JP2001250776A (ja) * 2000-03-07 2001-09-14 Mitsubishi Electric Corp 半導体装置、液晶表示装置、半導体装置の製造方法、液晶表示装置の製造方法
WO2003043093A1 (fr) * 2001-11-14 2003-05-22 Samsung Electronics Co., Ltd. Masque pour la cristallisation de silicium polycristallin, et procede de formage de transistor a film mince au moyen de ce masque
JP2003282442A (ja) * 2002-03-11 2003-10-03 Sharp Corp 半導体層の製造方法および半導体層製造システム
JP2003309080A (ja) * 2002-04-17 2003-10-31 Sharp Corp アニール処理された基板表面を平滑化する方法及びレーザーアニール処理用マスク
JP2004031809A (ja) * 2002-06-27 2004-01-29 Toshiba Corp フォトマスク及び半導体薄膜の結晶化方法
JP2004158584A (ja) * 2002-11-06 2004-06-03 Sharp Corp 多結晶質シリコン膜製造装置及びそれを用いた製造方法並びに半導体装置
JP2005005448A (ja) * 2003-06-11 2005-01-06 Sharp Corp 多結晶半導体薄膜の製造方法
JP2005005722A (ja) * 2003-06-12 2005-01-06 Lg Phillips Lcd Co Ltd シリコン結晶化方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001147446A (ja) * 1999-11-19 2001-05-29 Hitachi Ltd 液晶表示装置とその製造方法
JP2001250776A (ja) * 2000-03-07 2001-09-14 Mitsubishi Electric Corp 半導体装置、液晶表示装置、半導体装置の製造方法、液晶表示装置の製造方法
WO2003043093A1 (fr) * 2001-11-14 2003-05-22 Samsung Electronics Co., Ltd. Masque pour la cristallisation de silicium polycristallin, et procede de formage de transistor a film mince au moyen de ce masque
JP2003282442A (ja) * 2002-03-11 2003-10-03 Sharp Corp 半導体層の製造方法および半導体層製造システム
JP2003309080A (ja) * 2002-04-17 2003-10-31 Sharp Corp アニール処理された基板表面を平滑化する方法及びレーザーアニール処理用マスク
JP2004031809A (ja) * 2002-06-27 2004-01-29 Toshiba Corp フォトマスク及び半導体薄膜の結晶化方法
JP2004158584A (ja) * 2002-11-06 2004-06-03 Sharp Corp 多結晶質シリコン膜製造装置及びそれを用いた製造方法並びに半導体装置
JP2005005448A (ja) * 2003-06-11 2005-01-06 Sharp Corp 多結晶半導体薄膜の製造方法
JP2005005722A (ja) * 2003-06-12 2005-01-06 Lg Phillips Lcd Co Ltd シリコン結晶化方法

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