WO2006058473A1 - The light emitting diode of high luminous efficiency of 360 degree (body luminescence) - Google Patents

The light emitting diode of high luminous efficiency of 360 degree (body luminescence) Download PDF

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Publication number
WO2006058473A1
WO2006058473A1 PCT/CN2005/001184 CN2005001184W WO2006058473A1 WO 2006058473 A1 WO2006058473 A1 WO 2006058473A1 CN 2005001184 W CN2005001184 W CN 2005001184W WO 2006058473 A1 WO2006058473 A1 WO 2006058473A1
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Prior art keywords
light
emitting
emitting diode
degree
transparent
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PCT/CN2005/001184
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French (fr)
Chinese (zh)
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Jianwei Chen
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Jianwei Chen
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H01L2224/48249—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • the invention relates to a high efficacy photoluminescent diode in an optoelectronic component, in particular to a 36 degree (bulk illuminating) high efficacy photoluminescent diode.
  • the basic structure of the existing photoluminescent diode is exemplified by a white light emitting diode, which is basically formed in the reflector (4) of the LED holder (2), and the intrinsic semiconductor light emitting chip (3) is in the reflector (4).
  • the photoluminescent phosphor (5) is spotted, and then the transparent epoxy (1) is potted to form a white light emitting diode.
  • blue light + yellow light white light.
  • the existing white light emitting diode has an optical path: a voltage is applied to the pin of the light emitting diode holder (2), and the semiconductor light emitting chip (3) emits light (common blue light), and the short wavelength light excites the photoluminescent phosphor ( 5) Luminescence (commonly yellow), this process is also called photoluminescence, and the resulting white light is composite light.
  • the white light is transmitted in the transparent epoxy (1) (medium nl), and the convex lens formed by the reflective cup (4) and the transparent epoxy glue (1) is concentrated into a directional white light having a " ⁇ solid angle". (also known as power angle). (see picture 1)
  • the existing white light-emitting diodes have the following problems: First, 360-degree body illumination cannot be realized; Second. After reflection (4) reflection and multiple reflections Light, the light energy loss is large; third. When the light is transmitted on the transparent epoxy medium nl and the medium n2 (air) interface, since the "refractive index difference" of the medium nl and the medium n2 is large, the self-light The light output efficiency is low; fourth. The reflected light generated by the interface between the medium nl and the medium n2 is also lost.
  • the present invention aims to provide a 360-degree (bulk-emitting) high-efficiency photoluminescence diode, which solves the problem of low-efficiency unidirectional illumination existing in the existing photoluminescence diode package technology and package structure.
  • Light-emitting diodes, especially S-light-emitting diodes, have a broader application prospect in the field of illumination.
  • the basic principle on which the present invention is based The light-emitting diode chip itself has a light-emitting characteristic of body light emission or approximate light emission; Secondly, according to the principle of photoluminescence; Third, according to the principle of color mixing; Fourth, according to geometric optical refraction and The law of reflection.
  • the invention invents a "360-degree (bulk-emitting) high-efficiency photoluminescent diode", and its basic structure is shown in Fig. 2.
  • the invention consists of a light-emitting diode holder without a reflector, a semiconductor light-emitting chip, a wire, a transparent epoxy glue, a photoluminescent phosphor, and a transparent adhesive.
  • the transparent protective material can be sealed on the outer surface formed by the transparent adhesive.
  • a semiconductor light-emitting chip is inherently mounted on the light-emitting diode holder, and the two are connected by a wire completion circuit. It is then potted with a clear epoxy glue to form a "light emitting diode". Transparent adhesive and photo-induced The light phosphor powder is mixed and stirred in a certain ratio and degassed to prepare a "phosphor glue”. Then immerse the "light-emitting diode” in the “phosphor glue” and completely coat (attach) the surface of the "light-emitting diode” transparent epoxy glue with "phosphor glue”. After curing, a layer of "film body” composed of "clear adhesive and photoluminescent phosphor" is formed on the surface of the transparent epoxy.
  • a protective layer which may also be a protective body of a shaped body.
  • the protective layer has high light transmittance, high hardness mechanical strength, high abrasion resistance, and good chemical stability. (See Figure 6)
  • the voltage and current are applied to the two ends of the LED bracket to make the semiconductor light emitting chip emit light, and the semiconductor light emitting chip itself has the characteristics of body light emission or near body light emission, and the "film body” is completely coated outside the transparent epoxy glue. On the surface.
  • the principle of photoluminescence the light emitted by the photoluminescent phosphor excited by the semiconductor light-emitting chip is distributed on the "film body", which is also a 360-degree body light. Therefore, the combined light after spatial mixing achieves 360-degree body illumination. (See Figure 2)
  • the medium n3 is formed, and the transparent adhesive is selected as the "silicone resin adhesive", for example, silicone resin.
  • the refractive index (n3) is 1.38 ⁇ 1.39, and the refractive index (nl) of the transparent epoxy adhesive is 1.45, and the "refractive index difference" value of the dielectric nl and ⁇ 3 is small, so that the light-emitting efficiency of the semiconductor light-emitting chip is improved, correspondingly The light energy of the excited photoluminescent phosphor is increased, thereby achieving the purpose of high light efficiency.
  • the 360-degree (body-illuminated) high-efficiency photoluminescent diode is suitable for emitting composite light by the violet and blue-light-excited photoluminescent phosphors, and the wavelength of the light source of the excitation light source is 260 ⁇ ! ⁇ 480nm.
  • FIG. 1 is a schematic view of a conventional photoluminescent diode
  • Figure 2 is a schematic view of the embodiment
  • FIG. 3 is a schematic view of the first soaking of the second method of the embodiment
  • Figure 5 is a schematic view of the second soaking of the second method of the present embodiment
  • Figure 6 is a schematic view showing the molding method of the transparent protective material.
  • the present embodiment is composed of a transparent epoxy glue 1, a semiconductor light-emitting chip 3, a photoluminescent phosphor 5, a wire 6, a transparent protective material 7, a transparent adhesive 8, and a light-emitting diode holder 12.
  • the light-emitting diode 9 composed of a transparent epoxy glue 1, a semiconductor light-emitting chip 3, a wire 6, and a light-emitting diode holder 12 is a conventional manufacturing process.
  • the key implementation method is "clear adhesive 8 and photoluminescent phosphor 5" coated and cured on the surface of transparent epoxy 1 into a film body. 11 ".
  • the light-emitting diode 9 after the "glazed glass treatment” is compared with the luminous flux value before the treatment, and it is found that the luminous flux of the processed light-emitting diode 9 is decreased by 1.58%, but the light-emitting diode 9 after the "glazing treatment” is applied once (for example) image 3 ).
  • the coating layer is completely coated on the outer surface of the transparent epoxy resin 1, and after curing, the resulting "film body 11" has a good film forming effect.
  • the transparent adhesive 8 is made of silicone adhesive
  • the light-emitting diode 9 does not need to be "glazed", but the method of applying twice (Fig. 3, Fig. 4, Fig. 5) is: Firstly, the light-emitting diode 9 is completely immersed in a low-concentration "phosphor glue" 10 After curing, it is formed (Fig. 4).
  • the transparent adhesive 8 is made of a silicone resin adhesive
  • Method 3 Transparent adhesive 8 Select photosensitive optical adhesive.
  • the photosensitive optical adhesive has the characteristics of high strength, small shrinkage and good chemical stability of the epoxy resin, and has the characteristics of small viscosity of the unsaturated polyester resin, good wettability, and fast curing under light irradiation.
  • the "film body” 11 formed after one or two coatings is easier to control and does not require "glossy treatment" of the surface of the transparent epoxy. Also by the coating method, the obtained “film body” 11 is uniform, and the film formability is also preferable, but the cost is high. From the above three methods of forming the "film body U", it is known that the process for realizing the "film body 11" and the materials selected are various and various.
  • the material used for the transparent protective material 7 has a wide range of choices, and can be made of a transparent epoxy glue or a silicone resin adhesive, etc., and it can be formed in various ways, and a protective film can be formed.
  • a protective body is formed (see Figure 6). If the transparent adhesive 8 used for the 360-degree (bulk-emitting) high-efficiency photoluminescence diode is selected, the hardness, mechanical strength, wear resistance, and chemical stability are sufficient, and the transparent protective material 7 may not be used.
  • the present invention is compared with existing photoluminescent diodes
  • 360 degree (body-emitting) high-efficiency photoluminescent diode ⁇ 48 lumens / watt
  • Note: 1 we use wavelength 460-465nm, Languang ITO chip, light intensity is 90-100mcd, made ⁇ 5mm, 360 degrees (body Luminescence) High efficacy photoluminescent diode (white light), resulting in a luminous efficacy of 77 lumens per watt.
  • optical parameter data provided by the present invention are all produced by the Institute of Optoelectronics, China Metrology Institute: JF-II LED photoelectric parameter tester and ⁇ 90mm integrating sphere.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A light emitting diode which has high luminous efficiency of 360 degree (body luminescence) is provided in accordance with the present invention to solve a problem concerned low luminous efficiency and unidirectional luminescence which existing in package technology and package structure of the photoluminescence diode, so that the prospect of the light emitting diode, in particular the white light emitting diode is wider in the application field of illumination. The light emitting diode is comprised of LED frame without a light reflecting cup, semiconductor light emission chip, lead, transparent epoxy, photoluminescence phosphor, and transparent adhesive. In this basic structure, if the hardness, mechanical strength, wearability and chemical stability of the transparent adhesive is not enough, the outer surface formed of the transparent adhesive may be sealed and enclosed with the transparent protective material.

Description

360度 （体发光） 高光效光致发光二极管 技术领域  360 degree (body light) high efficacy photoluminescent diode
本发明涉及一种光电元器件中的高光效光致发光二极管， 尤其是一种 36度 (体发光） 高光效光致发光二极管。 背景技术  The invention relates to a high efficacy photoluminescent diode in an optoelectronic component, in particular to a 36 degree (bulk illuminating) high efficacy photoluminescent diode. Background technique
现有光致发光二极管的基本构成， 以白光发光二极管为例， 其基本构成为 发光二极管支架 （2) 中反光杯 （4) 内， 固有半导体发光芯片 （3)， 在反光杯 (4) 中点入光致发光荧光粉（5)， 然后灌封透明环氧胶（1 )， 从而构成白光发 光二极管。 目前白光发光二极管采用的混色原理： 兰光 +黄光 =白光。  The basic structure of the existing photoluminescent diode is exemplified by a white light emitting diode, which is basically formed in the reflector (4) of the LED holder (2), and the intrinsic semiconductor light emitting chip (3) is in the reflector (4). The photoluminescent phosphor (5) is spotted, and then the transparent epoxy (1) is potted to form a white light emitting diode. At present, the principle of color mixing used in white light-emitting diodes: blue light + yellow light = white light.
现有白光发光二极管， 光路传输路径为： 在发光二极管支架 （2) 的管脚上 加电压， 半导体发光芯片 （3 ) 发光 （常见发兰光）， 该短波长光激发光致发光 荧光粉（5 ) 发光 （常见为黄光）， 这个过程又称为光致发光， 所得到的白光为 复合光。 该白光在透明环氧（1 ) (介质 nl ) 内传输， 经反光杯（4) 以及透明环 氧胶（1 ) 成型的凸透镜会聚成一束方向性强的白光，该白光具" α立体角" (又称 功率角)。 （见图 1)  The existing white light emitting diode has an optical path: a voltage is applied to the pin of the light emitting diode holder (2), and the semiconductor light emitting chip (3) emits light (common blue light), and the short wavelength light excites the photoluminescent phosphor ( 5) Luminescence (commonly yellow), this process is also called photoluminescence, and the resulting white light is composite light. The white light is transmitted in the transparent epoxy (1) (medium nl), and the convex lens formed by the reflective cup (4) and the transparent epoxy glue (1) is concentrated into a directional white light having a "α solid angle". (also known as power angle). (see picture 1)
从以上举例的白光发光二极管的基本结构， 我们可以知道，现有的白光发光 二极管存在以下问题： 第一. 不能实现 360度体发光； 第二. 经过反光杯 （4) 反射和多次反射后的光,其光能光损失较大；第三. 光在透明环氧介质 nl与介质 n2(空气)介面上传输时,由于介质 nl和介质 n2的 "折射率差"较大,所以自光的出 光效率低； 第四. 介质 nl和介质 n2界面产生的反射光同样也损失掉。 （见图 1) 业界为实现 360° 体发光,在发光二极管的透明环氧胶（1 )中加入扩散剂或 色料,以期实现 360° 体发光，但这种方法无疑严重影响发光效率。 随着发光二极 管,特别是白光发光二极管进入照明市场,因而对白光发光二级管的光效及光传 输方式有了更高的要求。 而现有的白光发光二极管将受到更多的限制。 发明内容 From the basic structure of the white light-emitting diodes exemplified above, we can know that the existing white light-emitting diodes have the following problems: First, 360-degree body illumination cannot be realized; Second. After reflection (4) reflection and multiple reflections Light, the light energy loss is large; third. When the light is transmitted on the transparent epoxy medium nl and the medium n2 (air) interface, since the "refractive index difference" of the medium nl and the medium n2 is large, the self-light The light output efficiency is low; fourth. The reflected light generated by the interface between the medium nl and the medium n2 is also lost. (See Figure 1.) In order to achieve 360° body illumination, a diffusing agent is added to the transparent epoxy (1) of the LED or Coloring materials, in order to achieve 360 ° body luminescence, but this method will undoubtedly seriously affect the luminous efficiency. As light-emitting diodes, especially white light-emitting diodes, enter the lighting market, there is a higher demand for the efficacy and optical transmission of white light-emitting diodes. Existing white light emitting diodes will be more limited. Summary of the invention
(一)发明的目的  (1) Purpose of the invention
本发明旨在提供一种具有 360度 (体发光)高光效光致发光二极管，该发明解 决了现有光致发光二极管封装技术及封装结构上存在的低光效单向发光的问题, 使光致发光二极管， 特别是 S光发光二极管在照明领域的应用前景更为宽广。 The present invention aims to provide a 360-degree (bulk-emitting) high-efficiency photoluminescence diode, which solves the problem of low-efficiency unidirectional illumination existing in the existing photoluminescence diode package technology and package structure. Light-emitting diodes, especially S-light-emitting diodes, have a broader application prospect in the field of illumination.
(二)发明所依据的基本原理 (2) The basic principles on which the invention is based
本发明所依据的基本原理： 发光二极管芯片本身具有的发光特性为体发光 或近似发光； 其二. 依据光致发光的原理； 其三. 依据光的混色原理； 其四. 依 据几何光学折射与反射定律。  The basic principle on which the present invention is based: The light-emitting diode chip itself has a light-emitting characteristic of body light emission or approximate light emission; Secondly, according to the principle of photoluminescence; Third, according to the principle of color mixing; Fourth, according to geometric optical refraction and The law of reflection.
(三) 360度 (体发光)高光效光致发光二极管基本构成  (3) Basic structure of 360-degree (body-illuminated) high-efficiency photoluminescent diode
本发明依据上述基本原理,发明了 "360度 (体发光)高光效光致发光二极管" , 其基本结构构成如图 2。  According to the above basic principle, the invention invents a "360-degree (bulk-emitting) high-efficiency photoluminescent diode", and its basic structure is shown in Fig. 2.
本发明由不带反光杯的发光二极管支架， 半导体发光芯片， 导线， 透明环 氧胶， 光致发光荧光粉， 以及透明粘接胶构成。 在该基本结构中， 若透明粘接 胶的硬度、 机械强度、 耐磨性以及化学稳定性不够时， 可在透明粘接胶所形成 的外表面封透明保护材料。 （参见图 6)  The invention consists of a light-emitting diode holder without a reflector, a semiconductor light-emitting chip, a wire, a transparent epoxy glue, a photoluminescent phosphor, and a transparent adhesive. In the basic structure, if the hardness, mechanical strength, abrasion resistance, and chemical stability of the transparent adhesive are insufficient, the transparent protective material can be sealed on the outer surface formed by the transparent adhesive. (See Figure 6)
(四） 360度 (体发光)高光效光致发光二极管实现过程 （见图 2):  (iv) 360 degree (body-illuminated) high-efficiency photoluminescent diode implementation process (see Figure 2):
在发光二极管支架上固有半导体发光芯片，且两者经过导线完成电路联接。 然后用透明环氧胶灌封成型， 从而构成 "发光二极管"。 将透明粘接胶与光致发 光荧光粉，按一定比例混合搅拌均匀并脱气后，配制成 "荧光粉胶液"。再将"发 光二极管"浸入 "荧光粉胶液"中， 并使 "发光二极管" 的透明环氧胶的表面 完全涂覆（附着）上 "荧光粉胶液"。 固化后， 在透明环氧胶的表面就形成了一 层由 "透明粘接胶与光致发光荧光粉"所构成的一层 "薄膜体"。 为保护该 "薄 膜体"， 在其上用透明保护材料固化成保护层 （也可以是具形体的保护体）。 该 保护层 （保护体） 具有高透光、 高硬度机械强度、 高耐磨性以及良好的化学稳 定性。 （参见图 6) A semiconductor light-emitting chip is inherently mounted on the light-emitting diode holder, and the two are connected by a wire completion circuit. It is then potted with a clear epoxy glue to form a "light emitting diode". Transparent adhesive and photo-induced The light phosphor powder is mixed and stirred in a certain ratio and degassed to prepare a "phosphor glue". Then immerse the "light-emitting diode" in the "phosphor glue" and completely coat (attach) the surface of the "light-emitting diode" transparent epoxy glue with "phosphor glue". After curing, a layer of "film body" composed of "clear adhesive and photoluminescent phosphor" is formed on the surface of the transparent epoxy. To protect the "film body", it is cured with a transparent protective material to form a protective layer (which may also be a protective body of a shaped body). The protective layer (protective body) has high light transmittance, high hardness mechanical strength, high abrasion resistance, and good chemical stability. (See Figure 6)
(五）本发明的 360度 (体发光)发光机理：  (5) The 360 degree (bulk luminescence) luminescence mechanism of the present invention:
在发光二极管支架两端加上电压、 电流经导线， 使半导体发光芯片发光,而 半导体发光芯片自身具有体发光或近似体发光的特征，且 "薄膜体"完全涂覆在 透明环氧胶的外表面上。 依据光致发光原理： 被半导体发光芯片激发的光致发 光荧光粉所发出的光分布在 "薄膜体"上， 同样属 360度体发光。 故经空间混 合后的复合光， 实现了 360度体发光。 （见图 2)  The voltage and current are applied to the two ends of the LED bracket to make the semiconductor light emitting chip emit light, and the semiconductor light emitting chip itself has the characteristics of body light emission or near body light emission, and the "film body" is completely coated outside the transparent epoxy glue. On the surface. According to the principle of photoluminescence: the light emitted by the photoluminescent phosphor excited by the semiconductor light-emitting chip is distributed on the "film body", which is also a 360-degree body light. Therefore, the combined light after spatial mixing achieves 360-degree body illumination. (See Figure 2)
(六） 本发明高光效的实现机理： ，  (6) The realization mechanism of the high luminous efficiency of the invention:
实现 360度 (体发光)高光效光致发光二极管高光效,由于去掉了反光杯， 从 而减少了半导体发光芯片与光致发光荧光粉所发出的光， 在反光杯中反射造成 的光能损失； 另一个原因就是充分利用了透明环氧胶成型后形成的光学腔中半 导体发光芯片产生的反射光，使这部分反射光作为能量源参与激发光致发光荧光 粉;第三个原因就是在透明环氧胶 (介质 nl)与"透明粘接胶与光致 发光荧光粉" 的界面处,形成的介质 n3,以透明粘接胶选用材料为 "有机硅树脂粘接胶"为例， 有机硅树脂的折射率 (n3)为 1.38〜1.39， 而透明环氧胶的折射率 (nl)为 1.45， 介 质 nl与 π3的 "折射率差"值较小，从而使半导体发光芯片 的出光效率提高, 相应地增大了激发光致发光荧光粉的光能， 因此实现了高光效的目的。 360度 (体发光)高光效光致发光二极管适用于由紫光、 兰光激发光致发光荧 光粉发出复合光， 激发光源的光波波长 260ηπ！〜 480nm。 附图说明 Achieving 360-degree (bulk-emitting) high-efficiency photoluminescent diodes with high luminous efficiency, since the reflector is removed, thereby reducing the light energy caused by the reflection of the semiconductor light-emitting chip and the photoluminescent phosphor, and the light energy caused by the reflection in the reflector; Another reason is to make full use of the reflected light generated by the semiconductor light-emitting chip in the optical cavity formed by the transparent epoxy glue, so that the partially reflected light is used as an energy source to participate in exciting the photoluminescent phosphor; the third reason is in the transparent ring. At the interface between the oxygen gel (medium nl) and the "transparent adhesive and photoluminescent phosphor", the medium n3 is formed, and the transparent adhesive is selected as the "silicone resin adhesive", for example, silicone resin. The refractive index (n3) is 1.38~1.39, and the refractive index (nl) of the transparent epoxy adhesive is 1.45, and the "refractive index difference" value of the dielectric nl and π3 is small, so that the light-emitting efficiency of the semiconductor light-emitting chip is improved, correspondingly The light energy of the excited photoluminescent phosphor is increased, thereby achieving the purpose of high light efficiency. The 360-degree (body-illuminated) high-efficiency photoluminescent diode is suitable for emitting composite light by the violet and blue-light-excited photoluminescent phosphors, and the wavelength of the light source of the excitation light source is 260ηπ! ~ 480nm. DRAWINGS
下面结合附图及实施例对本发明进一步说明。  The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
图 1是现有光致发光二极管示意图；  1 is a schematic view of a conventional photoluminescent diode;
图 2是本实施例示意图；  Figure 2 is a schematic view of the embodiment;
图 3是本实施例方法二第一次浸泡示意图；  3 is a schematic view of the first soaking of the second method of the embodiment;
图 4是本实施例方法二第一次固化后示意图；  4 is a schematic view of the first curing of the second method of the embodiment;
图 5是本实施例方法二第二次浸泡示意图；  Figure 5 is a schematic view of the second soaking of the second method of the present embodiment;
图 6是透明保护材料成型方式示意图。  Figure 6 is a schematic view showing the molding method of the transparent protective material.
图中： 1.透明环氧胶； 2.发光二极管支架； 3.半导体发光芯片； 4.反光杯； 5.光致 发光荧光粉； 6.导线； 7.透明保护材料； 8.透明粘接胶； 9.发光二极管； 10.荧光 粉胶液； 11.薄膜体； 12.发光二极管支架。 具体实施方式 In the figure: 1. transparent epoxy adhesive; 2. LED bracket; 3. semiconductor light-emitting chip; 4. reflective cup; 5. photoluminescent phosphor; 6. wire; 7. transparent protective material; Glue; 9. Light-emitting diode; 10. Phosphor glue; 11. Film body; 12. LED bracket. detailed description
参照图 2， 本实施例由透明环氧胶 1、 半导体发光芯片 3、 光致发光荧光粉 5、 导线 6、 透明保护材料 7、 透明粘接胶 8、 发光二极管支架 12组成。  Referring to Fig. 2, the present embodiment is composed of a transparent epoxy glue 1, a semiconductor light-emitting chip 3, a photoluminescent phosphor 5, a wire 6, a transparent protective material 7, a transparent adhesive 8, and a light-emitting diode holder 12.
其中由透明环氧胶 1、半导体发光芯片 3、导线 6、发光二极管支架 12组成 的发光二极管 9,该组成工艺属于传统的制造工艺。在实现 360度 (体发光)高光效 光致发光二极管中,关键的实施方法就是 "透明粘接胶 8与光致发光荧光粉 5 " 在透明环氧胶 1表面涂覆并固化成 "薄膜体 11 "。  The light-emitting diode 9 composed of a transparent epoxy glue 1, a semiconductor light-emitting chip 3, a wire 6, and a light-emitting diode holder 12 is a conventional manufacturing process. In the realization of 360-degree (bulk-emitting) high-efficiency photoluminescent diodes, the key implementation method is "clear adhesive 8 and photoluminescent phosphor 5" coated and cured on the surface of transparent epoxy 1 into a film body. 11 ".
由于发光二极管制造行业中，在透明环氧胶 1 成型时，广泛采用 "脱模剂"脱 模，再加之固化成型'后的透明环氧胶 1表面光滑,因而增加了 1薄膜体 11 "的形成 难度,针对这个问题我们采取了如下措施： Due to the formation of transparent epoxy glue 1 in the LED manufacturing industry, the "release agent" is widely used. The mold, together with the cured molding, has a smooth surface, thus increasing the difficulty of forming a film body 11". For this problem, we have taken the following measures:
方法一、 对透明环氧胶 1表面 "毛玻璃化处理 "： Method 1: For the surface of transparent epoxy rubber 1 "Grinding treatment":
经 "毛玻璃化处理"后的发光二极管 9与处理前的光通量值对比后发现， 处理后的发光二极管 9的光通量下降 1.58%，但 "毛玻璃化处理"后的发光二极 管 9采用一次涂覆 （如图 3 )。 使涂覆层完全包覆在透明环氧胶 1的外表面， 固 化后， 所得到的 "薄膜体 11 "成膜效果好。 （本实施例中透明粘接胶 8选用有机 硅树脂粘接胶）  The light-emitting diode 9 after the "glazed glass treatment" is compared with the luminous flux value before the treatment, and it is found that the luminous flux of the processed light-emitting diode 9 is decreased by 1.58%, but the light-emitting diode 9 after the "glazing treatment" is applied once (for example) image 3 ). The coating layer is completely coated on the outer surface of the transparent epoxy resin 1, and after curing, the resulting "film body 11" has a good film forming effect. (In this embodiment, the transparent adhesive 8 is made of silicone adhesive)
方法二、 对透明环氧胶 1表面作两次涂覆： Method 2: Apply twice to the surface of the transparent epoxy glue 1 :
发光二极管 9无需 "毛玻璃化处理"，而采取两次涂覆 (图 3、 图 4、 图 5)的 方法为： 第一次将发光二极管 9完全浸入低浓度的 "荧光粉胶液" 10中， 固化 后使之形成 （图 4) 效果， 由于光致发光荧光粉 5在 "荧光粉胶液" 10中， 仍 然是以晶体状存在， 因而固化后形成的 "薄膜体" 11 的表面也相对粗糙； 第二 次将具粗糙面的发光二极管 9再次浸入浓度较高的 "荧光粉胶液 "10中 (见图 5)， 然后固化， 经两次涂覆后所得到的 "薄膜体" 11 具有较高的 光通量， 但形 成的 "薄膜体" 11不如方法 1均匀。 （本实施例中， 透明粘接胶 8选用有机硅树 脂粘接剂）  The light-emitting diode 9 does not need to be "glazed", but the method of applying twice (Fig. 3, Fig. 4, Fig. 5) is: Firstly, the light-emitting diode 9 is completely immersed in a low-concentration "phosphor glue" 10 After curing, it is formed (Fig. 4). Since the photoluminescent phosphor 5 is still in the form of crystals in the "phosphor glue" 10, the surface of the "film body" 11 formed after curing is also relatively Rough; secondly, the rough surface light-emitting diode 9 is again immersed in the higher concentration "phosphor glue" 10 (see Figure 5), and then solidified, and the "film body" obtained after two coatings is 11 It has a higher luminous flux, but the formed "film body" 11 is not as uniform as the method 1. (In this embodiment, the transparent adhesive 8 is made of a silicone resin adhesive)
3、 方法三： 透明粘接胶 8选用光敏光学胶。  3. Method 3: Transparent adhesive 8 Select photosensitive optical adhesive.
光敏光学胶具有环氧树脂的强度高， 收縮率小， 化学稳定性好的特点， 又 具有不饱和聚脂树脂的粘度小， 浸润性好的工艺性能， 在光照射下固化快的特 点， 采用一次或两次涂覆后形成的 "薄膜体"' 11 较易控制， 且无需对透明环氧 胶的表面采取 "毛玻璃化处理"。 同样采取涂覆方法， 所得到的 "薄膜体" 11均 匀， 且成膜性也较理想， 但成本较高。 从上述三种形成"薄膜体 U "的方法可知，实现"薄膜体 11 "的工艺方 法 和选择的材料有多种多样， 各具所长。 The photosensitive optical adhesive has the characteristics of high strength, small shrinkage and good chemical stability of the epoxy resin, and has the characteristics of small viscosity of the unsaturated polyester resin, good wettability, and fast curing under light irradiation. The "film body" 11 formed after one or two coatings is easier to control and does not require "glossy treatment" of the surface of the transparent epoxy. Also by the coating method, the obtained "film body" 11 is uniform, and the film formability is also preferable, but the cost is high. From the above three methods of forming the "film body U", it is known that the process for realizing the "film body 11" and the materials selected are various and various.
关于透明保护材料 7的成型： About the molding of transparent protective material 7:
透明保护材料 7所用材料， 其选择的范围很大， 可以用透明环氧胶， 也可 以用有机硅树脂粘接胶等等， 而且它的成型方式也有多种多样， 可以形成保护 膜， 也可以形成保护体（参见图 6)。 若 360度 （体发光） 高光效光致发光二极 管所选用的透明粘接胶 8， 其硬度、机械强度、 耐磨性、 化学稳定性足够时， 透 明保护材料 7也可以不要。  The material used for the transparent protective material 7 has a wide range of choices, and can be made of a transparent epoxy glue or a silicone resin adhesive, etc., and it can be formed in various ways, and a protective film can be formed. A protective body is formed (see Figure 6). If the transparent adhesive 8 used for the 360-degree (bulk-emitting) high-efficiency photoluminescence diode is selected, the hardness, mechanical strength, wear resistance, and chemical stability are sufficient, and the transparent protective material 7 may not be used.
本发明与现有光致发光二极管比较 The present invention is compared with existing photoluminescent diodes
以下光致发光二极管选用白光发光二极管作对比： 工作电流 If=20mA，工作 电压 Vf=3.2〜3.35伏。  The following photoluminescent diodes are selected for comparison with white light-emitting diodes: Operating current If=20 mA, operating voltage Vf=3.2 to 3.35 volts.
)光发散角度 （半功率角） 对比项目 不加扩散剂 加扩散剂 现有白光发光二极管 120。 360。 ) Light divergence angle (half power angle) Comparison item No diffusing agent plus diffusing agent Existing white light emitting diode 120. 360.
360度（体发光） 高光效光致发光二极管 360° 360 degree (body light) high efficacy photoluminescent diode 360°
对比项目 光效 备注 现有白光发光二极管 35流明 /瓦 所有芯片均采用波 Comparison item Light effect Remarks Existing white light emitting diode 35 lumens / watt All chips are wave
长 460-465nm, 光强  Length 460-465nm, light intensity
40-50mw, Φ 5 mm封  40-50mw, Φ 5 mm seal
360度（体发光）高光效光致发光二极管 ^48流明 /瓦 注： 1、 我们用波长为 460-465nm， 兰光 ITO芯片， 光强为 90- 100mcd， 制成 Φ 5mm, 360度 （体发光） 高光效光致发光二极管 （白光）， 所得到的光效 达至 77流明 /瓦。  360 degree (body-emitting) high-efficiency photoluminescent diode ^48 lumens / watt Note: 1, we use wavelength 460-465nm, Languang ITO chip, light intensity is 90-100mcd, made Φ 5mm, 360 degrees (body Luminescence) High efficacy photoluminescent diode (white light), resulting in a luminous efficacy of 77 lumens per watt.
2、 本发明提供的光参数数据， 均由中国计量学院光电子研究所生产的： JF- II型 LED光电参数测试仪以及 Φ 90mm积分球测得。 2. The optical parameter data provided by the present invention are all produced by the Institute of Optoelectronics, China Metrology Institute: JF-II LED photoelectric parameter tester and Φ 90mm integrating sphere.

Claims

权利要求书 Claim
1. 360度 (体发光)高光效光致发光二极管，其特征在于： 它由透明环氧胶（1 )、 半导体发光芯片 （3 )、 光致发光荧光粉 （5)、 导线 （6)、 透明粘接胶 （8)、 发光二极管支架（12)组成，透明环氧胶（1 )外表面涂覆有由透明粘接胶（8) 与光致发光荧光粉（5 )形成的薄膜体（11 )。 1. 360 degree (body light) high efficacy photoluminescent diode, characterized by: transparent epoxy glue (1), semiconductor light emitting chip (3), photoluminescent phosphor (5), wire (6), The transparent adhesive (8) and the light-emitting diode bracket (12) are formed, and the outer surface of the transparent epoxy (1) is coated with a film body formed by a transparent adhesive (8) and a photoluminescent phosphor (5) ( 11).
2. 根据权利要求 1所述的 360度（体发光）高光效光致发光二极管， 其特征在 于： 半导体发光芯片 （3 )适用于光波波长为 260nm— 480nm的紫光、 兰光半 导体发光芯片。 2. The 360-degree (bulk-emitting) high-efficiency photoluminescent diode according to claim 1, wherein the semiconductor light-emitting chip ( 3) is suitable for a violet light and blue light semiconductor light-emitting chip having a wavelength of light of 260 nm to 480 nm.
3. 根据权利要求 1所述的 360度（体发光）高光效光致发光二极管， 其特征在 于： 适用于以半导体发光芯片为激发能量源激发光致发光荧光粉所形成的复 合光。 3. The 360-degree (bulk-emitting) high-efficiency photoluminescent diode according to claim 1, wherein: the composite light is formed by exciting a photoluminescent phosphor with a semiconductor light-emitting chip as an excitation energy source.
4. 根据权利要求 1所述的 360度（体发光）高光效光致发光二极管， 其特征在 于： 透明环氧胶（1 ) 的表面 "毛玻璃化处理"。  4. The 360-degree (bulk-emitting) high-efficiency photoluminescence diode according to claim 1, wherein: the surface of the transparent epoxy (1) is "glazed".
5. 根据权利要求 1所述的 360度（体发光）高光效光致发光二极管， 其特征在 于： 薄膜体（11 ) 的外表面涂覆透明保护材料 （7)。 The 360-degree (bulk-emitting) high-efficiency photoluminescent diode according to claim 1, wherein the outer surface of the film body (11) is coated with a transparent protective material (7).
PCT/CN2005/001184 2004-12-03 2005-08-03 The light emitting diode of high luminous efficiency of 360 degree (body luminescence) WO2006058473A1 (en)

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