CN1665038A - 360 degree high photosynthetic capacity photoluminescent diode - Google Patents
360 degree high photosynthetic capacity photoluminescent diode Download PDFInfo
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- CN1665038A CN1665038A CN2004100524874A CN200410052487A CN1665038A CN 1665038 A CN1665038 A CN 1665038A CN 2004100524874 A CN2004100524874 A CN 2004100524874A CN 200410052487 A CN200410052487 A CN 200410052487A CN 1665038 A CN1665038 A CN 1665038A
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- 229920006335 epoxy glue Polymers 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000004020 luminiscence type Methods 0.000 claims description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 239000000853 adhesive Substances 0.000 claims description 18
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- 239000010409 thin film Substances 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000005338 frosted glass Substances 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 16
- 239000003292 glue Substances 0.000 abstract description 10
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- 238000007872 degassing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
- H01L2224/48249—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a 360 deg. high-light effect photic light-emitting diode, solving the problem of low-light effect one-way light emission in the existing photic light-emitting diode packaging technique and structure, making the application prospect of the photic light-emitting diode, particularly the white light emitting diode, broader. It is composed of light emitting diode bracket without any light reflecting cup, semiconductor light emitting chip, wire, transparent epoxy glue, photic light emitting fluorescent powder and transparent glue. In this basic structure, if the hardness, mechanical strength, wearability and chemical stability of the transparent glue are not enough, it can seal the outer surface formed of the transparent glue with transparent protective material.
Description
Technical field
The present invention relates to the high light efficiency luminescence generated by light diode in a kind of photoelectric component, especially a kind of 360 degree (body is luminous) high light efficiency luminescence generated by light diodes.
Background technology
The basic comprising of existing luminescence generated by light diode, with the white light emitting diode is example, its basic comprising is in the middle reflector (4) of LED support (2), proper semiconductor's luminescence chip (3), go into luminescence generated by light fluorescent material (5) at reflector (4) mid point, embedding transparent epoxy glue (1) then, thus constitute white light emitting diode.The colour mixture principle of white light emitting diode employing at present: blue streak+gold-tinted=white light.
Existing white light emitting diode, the optic path path is: making alive on the pin of LED support (2), semiconductor light emitting chip (3) luminous (common blue streak), this short-wavelength light excites photoluminescent phosphor (5) luminous (common is gold-tinted), this process is called luminescence generated by light again, and resulting white light is a complex light.This white light transmits in transparent epoxy (1) (medium n1), is converged to the white light of a branch of high directivity, this white light tool " α solid angle " (claiming power angle again) through the convex lens of reflector (4) and transparent epoxy glue (1) moulding.(see figure 1)
From the basic structure of above white light emitting diode of giving an example, we can know that there is following problem in existing white light emitting diode: an can not realize that 360 degree bodies are luminous; Light after the 2nd, reflects through reflector (4) and repeatedly reflects, its luminous energy light loss is bigger; The 3rd. when light transmits on transparent epoxy medium n1 and medium n2 (air) interface, because " refringence " of medium n1 and medium n2 is bigger, so the light extraction efficiency of white light is low; The 4th. the reverberation that medium n1 and medium n2 interface produce equally also loses.(see figure 1)
Industry is luminous for realizing 360 ° of bodies, adds diffusant or colorant in the transparent epoxy glue (1) of light-emitting diode, and is luminous in the hope of realizing 360 ° of bodies, but this method has a strong impact on luminous efficiency undoubtedly.Along with light-emitting diode, particularly white light emitting diode enters illumination market, thereby the light efficiency and the optical transmission mode of white light Light-Emitting Diode had higher requirement.And existing white light emitting diode will be subjected to more restriction.
Summary of the invention
(1) Fa Ming purpose
The present invention aims to provide a kind of 360 degree (body is luminous) high light efficiency luminescence generated by light diodes that have, this invention has solved the unidirection luminous problem of low light efficiency that exists on existing luminescence generated by light diode packaging technology and the encapsulating structure, make luminescence generated by light diode, particularly white light emitting diode more broad in the application prospect of lighting field.
(2) basic principle of invention institute foundation
The basic principle of institute of the present invention foundation: the characteristics of luminescence that light-emitting diode chip for backlight unit itself has is that body is luminous or approximate luminous; They are two years old. according to the principle of luminescence generated by light; They are three years old. according to the colour mixture principle of light; They are four years old. according to geometric optics refraction and reflection law.
(3) 360 degree (body is luminous) high light efficiency luminescence generated by light diode basic comprisings
The present invention has invented " 360 degree (body is luminous) high light efficiency luminescence generated by light diode " according to above-mentioned basic principle, and its basic structure constitutes as Fig. 2.
The present invention is by with the LED support of reflector, the semiconductor light emitting chip, and lead, transparent epoxy glue, photoluminescent phosphor, and transparent bonded adhesives constitutes.In this basic structure, if when hardness, mechanical strength, resistance to wear and the chemical stability of transparent bonded adhesives is not enough, can be at the formed outer surface envelope of transparent bonded adhesives transparent protection material.(referring to Fig. 6)
(4) 360 degree (body is luminous) high light efficiency luminescence generated by light diode implementation procedure (see figure 2)s:
Proper semiconductor's luminescence chip on LED support, and both finish the circuit connection through lead.Use transparent epoxy glue embedding moulding then, thereby constitute " light-emitting diode ".With transparent bonded adhesives and photoluminescent phosphor, after the mixing and stirring and the degassing, be mixed with " fluorescent material glue " by a certain percentage.Again with in " light-emitting diode " immersion " fluorescent material glue ", and make the surface of the transparent epoxy glue of " light-emitting diode " apply (adhering to) fully to go up " fluorescent material glue ".After the curing, just formed one deck " thin-film body " that one deck is made of " transparent bonded adhesives and photoluminescent phosphor " on the surface of transparent epoxy glue.Be somebody's turn to do " thin-film body " for protection, be solidified into protective layer (also can be the protective of tool body) with transparent protection material thereon.This protective layer (protective) has high printing opacity, high rigidity mechanical strength, high-wearing feature and good chemical stability.(referring to Fig. 6)
(5) 360 degree (body is luminous) luminescence mechanisms of the present invention:
Add that at the LED support two ends voltage, electric current through lead, make the semiconductor light emitting chip light emitting, and the semiconductor light emitting chip self have the feature that body is luminous or approximation is luminous, and " thin-film body " is coated in fully on the outer surface of transparent epoxy glue.According to the luminescence generated by light principle: the light that photoluminescent phosphor sent that is excited by the semiconductor light emitting chip is distributed on " thin-film body ", and it is luminous to belong to 360 degree bodies equally.So the mixed complex light through the space has realized that 360 degree bodies are luminous.(see figure 2)
(6) realization mechanism of the high light efficiency of the present invention:
Realize the high light efficiency of 360 degree (body is luminous) high light efficiency luminescence generated by light diodes, owing to removed reflector, thus reduced the light that semiconductor light emitting chip and photoluminescent phosphor are sent, the optical energy loss that reflection causes in reflector; Another reason is exactly to have made full use of the reverberation that the semiconductor light emitting chip produces in the optics cavity that forms behind the transparent epoxy gum forming, makes this part reverberation participate in exciting photoluminescent phosphor as energy source; The 3rd reason is exactly at transparent epoxy glue (medium n1) and " transparent bonded adhesives and photoluminescent phosphor " at the interface, the medium n3 that forms, with transparent bonded adhesives the selection of material is that " organic siliconresin bonded adhesives " is example, the refractive index of organic siliconresin (n3) is 1.38～1.39, and the refractive index of transparent epoxy glue (n1) is 1.45, " refringence " value of medium n1 and n3 is less, thereby the light extraction efficiency of semiconductor light emitting chip is improved, correspondingly increase the luminous energy that excites photoluminescent phosphor, therefore realized the purpose of high light efficiency.
360 degree (body is luminous) high light efficiency luminescence generated by light diodes are applicable to by purple light, blue streak and excite photoluminescent phosphor to send complex light, the optical wavelength 260nm～480nm of excitation source.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is existing luminescence generated by light diode schematic diagram;
Fig. 2 is the present embodiment schematic diagram;
Fig. 3 is that the present embodiment method two soaks schematic diagram for the first time;
Fig. 4 is that the present embodiment method two solidifies the back schematic diagram for the first time;
Fig. 5 is that the present embodiment method two soaks schematic diagram for the second time;
Fig. 6 is a transparent protection material molding mode schematic diagram.
Among the figure: 1. transparent epoxy glue; 2. LED support; 3. semiconductor light emitting chip; 4. reflector; 5. photoluminescent phosphor; 6. lead; 7. transparent protection material; 8. transparent bonded adhesives; 9. light-emitting diode; 10. fluorescent material glue; 11. thin-film body; 12. LED support.
Embodiment
With reference to Fig. 2, present embodiment is made up of transparent epoxy glue 1, semiconductor light emitting chip 3, photoluminescent phosphor 5, lead 6, transparent protection material 7, transparent bonded adhesives 8, LED support 12.
The light-emitting diode of being made up of transparent epoxy glue 1, semiconductor light emitting chip 3, lead 6, LED support 12 9 wherein, this composition technology belongs to traditional manufacturing process.In realizing 360 degree (body is luminous) high light efficiency luminescence generated by light diodes, crucial implementation method is exactly that " transparent bonded adhesives 8 and photoluminescent phosphor 5 " is in transparent epoxy glue 1 surface-coated and be solidified into " thin-film body 11 ".
Because in the light-emitting diode manufacturing, when 1 moulding of transparent epoxy glue, extensively adopt " release agent " demoulding, transparent epoxy glue 1 smooth surface behind the curing molding in addition, thereby increased the formation difficulty of " thin-film body 11 ", we have taked following measure at this problem:
Method one, to transparent epoxy glue 1 surface " frosted glass processing ":
Light-emitting diode 9 after " frosted glass processing " and the light flux values contrast back before the processing are found, the luminous flux decline 1.58% of the light-emitting diode 9 after the processing, but the light-emitting diode 9 employing primary coatings (as Fig. 3) after " frosted glass processing ".Make coat be coated on the outer surface of transparent epoxy glue 1 fully, after the curing, resulting " thin-film body 11 " film-formation result is good.(transparent bonded adhesives 8 is selected the organic siliconresin bonded adhesives for use in the present embodiment)
Method two, twice coating done on transparent epoxy glue 1 surface:
Light-emitting diode 9 need not " frosted glass processing ", and take the method for twice coating (Fig. 3, Fig. 4, Fig. 5) to be: for the first time light-emitting diode 9 is immersed in " the fluorescent material glue " 10 of low concentration fully, make it to form (Fig. 4) effect after the curing, because photoluminescent phosphor 5 is in " fluorescent material glue " 10, remain with lenticular and exist, thereby it is also coarse relatively to solidify the surface of " thin-film body " 11 that the back forms; Light-emitting diode 9 with the tool matsurface immerses (see figure 5) in higher " the fluorescent material glue " 10 of concentration once more for the second time, solidify then, " thin-film body " 11 resulting after twice coating has higher luminous flux, but " thin-film body " 11 that forms is even not as method 1.(in the present embodiment, transparent bonded adhesives 8 is selected the organic siliconresin bonding agent for use)
3, method three: transparent bonded adhesives 8 is selected photosensitive optical cement for use.
Photosensitive optical cement has the intensity height of epoxy resin, shrinkage is little, the characteristics that chemical stability is good, the viscosity that has unsaturated polyester resin again is little, the processing performance that wettability is good, the characteristics of quick solidifying under rayed adopt " thin-film body " 11 that applies back formation once or twice more easy to control, and need not " frosted glass processing " taked on the surface of transparent epoxy glue.Take painting method equally, resulting " thin-film body " 11 is even, and film forming is also more satisfactory, but cost is higher.
From the method for above-mentioned three kinds of formation " thin-film body 11 " as can be known, the material of realizing the process of " thin-film body 11 " and selection has varied, each tool chief.
Moulding about transparent protection material 7:
Transparent protection material 7 material therefors, the scope of its selection is very big, can use transparent epoxy glue, also can be with organic siliconresin bonded adhesives or the like, and also its molding mode also has variedly, can form diaphragm, also can form protective (referring to Fig. 6).If 360 degree (body is luminous) high light efficiency luminescence generated by light diodes selected transparent bonded adhesivess 8, its hardness, mechanical strength, resistance to wear, when chemical stability is enough, transparent protection material 7 can not wanted yet.
The present invention and existing luminescence generated by light diode are relatively
Following luminescence generated by light diode selects for use white light emitting diode to contrast: operating current If=20mA, operating voltage Vf=3.2～3.35 volt.
One) light dispersion angle (half-power angle)
| The contrast project | Do not add diffusant | Add diffusant |
| Existing white light emitting diode | ≤120° | ≤360° |
| 360 degree (body is luminous) high light efficiency luminescence generated by light diodes | ??≤360° |
Two) light efficiency
| The contrast project | Light efficiency | Remarks |
| Existing white light emitting diode | ≤ 35 lumens/watt | All chips all adopt wavelength 460-465nm, light intensity 40-50mw, φ 5mm encapsulation |
| 360 degree (body is luminous) high light efficiency luminescence generated by light diodes | 〉=48 lumens/watt |
Annotate: 1, we are 460-465nm with wavelength, blue streak ITO chip, and light intensity is 90-100mcd, makes φ 5mm, 360 degree (body is luminous) high light efficiency luminescence generated by light diodes (white light), resulting light efficiency reaches to 77 lumens/watt.
2, optical parameter data provided by the invention, produce by photoelectron research institute of the China Measures Institute: JF-II type LED photoelectric parameter testing instrument and φ 90mm integrating sphere record.
Claims (5)
1.360 degree (body is luminous) high light efficiency luminescence generated by light diode, it is characterized in that: it is made up of transparent epoxy glue (1), semiconductor light emitting chip (3), photoluminescent phosphor (5), lead (6), transparent bonded adhesives (8), LED support (12), and transparent epoxy glue (1) outer surface is coated with the thin-film body (11) that is formed by transparent bonded adhesives (8) and photoluminescent phosphor (5).
2. 360 degree (body is luminous) high light efficiency luminescence generated by light diodes according to claim 1, it is characterized in that: semiconductor light emitting chip (3) is applicable to that optical wavelength is purple light, the blue streak semiconductor light emitting chip of 260nm-480nm.
3. 360 degree (body is luminous) high light efficiency luminescence generated by light diodes according to claim 1 is characterized in that: be applicable to the semiconductor light emitting chip to be that excitation energy source excites the formed complex light of photoluminescent phosphor.
4. 360 degree (body is luminous) high light efficiency luminescence generated by light diodes according to claim 1 is characterized in that: the surface of transparent epoxy glue (1) " frosted glass processing ".
5. 360 degree (body is luminous) high light efficiency luminescence generated by light diodes according to claim 1, it is characterized in that: the outer surface of thin-film body (11) applies transparent protection material (7).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2004100524874A CN1665038A (en) | 2004-12-03 | 2004-12-03 | 360 degree high photosynthetic capacity photoluminescent diode |
| PCT/CN2005/001184 WO2006058473A1 (en) | 2004-12-03 | 2005-08-03 | The light emitting diode of high luminous efficiency of 360 degree (body luminescence) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2004100524874A CN1665038A (en) | 2004-12-03 | 2004-12-03 | 360 degree high photosynthetic capacity photoluminescent diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1665038A true CN1665038A (en) | 2005-09-07 |
Family
ID=35036009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2004100524874A Pending CN1665038A (en) | 2004-12-03 | 2004-12-03 | 360 degree high photosynthetic capacity photoluminescent diode |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN1665038A (en) |
| WO (1) | WO2006058473A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101691912A (en) * | 2009-09-14 | 2010-04-07 | 重庆耀辉电工电器有限责任公司 | Three-dimensional luminous LED light source and packaging method |
| US7872273B2 (en) | 2008-03-28 | 2011-01-18 | Industrial Technology Research Institute | Light emitting device |
| CN101551077B (en) * | 2008-04-03 | 2011-11-30 | 财团法人工业技术研究院 | Light-emitting device and backlight device using the same and assembling method |
| CN101432895B (en) * | 2006-04-24 | 2012-09-05 | 克利公司 | Side-view surface mount white LED |
| CN102664229A (en) * | 2012-06-05 | 2012-09-12 | 泉州万明光电有限公司 | Light emitting diode light source structure |
| US8994045B2 (en) | 2006-10-12 | 2015-03-31 | Cree, Inc. | Lighting device having luminescent material between a reflective cup and a solid state light emitter |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5962971A (en) * | 1997-08-29 | 1999-10-05 | Chen; Hsing | LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights |
| US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
| JP2907286B1 (en) * | 1998-06-26 | 1999-06-21 | サンケン電気株式会社 | Resin-sealed semiconductor light emitting device having fluorescent cover |
| JP3564330B2 (en) * | 1999-07-19 | 2004-09-08 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP2002232012A (en) * | 2001-02-02 | 2002-08-16 | Rohm Co Ltd | Semiconductor light emitting element |
-
2004
- 2004-12-03 CN CN2004100524874A patent/CN1665038A/en active Pending
-
2005
- 2005-08-03 WO PCT/CN2005/001184 patent/WO2006058473A1/en not_active Application Discontinuation
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101432895B (en) * | 2006-04-24 | 2012-09-05 | 克利公司 | Side-view surface mount white LED |
| US8994045B2 (en) | 2006-10-12 | 2015-03-31 | Cree, Inc. | Lighting device having luminescent material between a reflective cup and a solid state light emitter |
| CN101558501B (en) * | 2006-10-12 | 2015-04-22 | 科锐公司 | Lighting device and method of making same |
| US7872273B2 (en) | 2008-03-28 | 2011-01-18 | Industrial Technology Research Institute | Light emitting device |
| US8227827B2 (en) | 2008-03-28 | 2012-07-24 | Industrial Technology Research Institute | Light emitting device |
| CN101551077B (en) * | 2008-04-03 | 2011-11-30 | 财团法人工业技术研究院 | Light-emitting device and backlight device using the same and assembling method |
| CN101691912A (en) * | 2009-09-14 | 2010-04-07 | 重庆耀辉电工电器有限责任公司 | Three-dimensional luminous LED light source and packaging method |
| CN102664229A (en) * | 2012-06-05 | 2012-09-12 | 泉州万明光电有限公司 | Light emitting diode light source structure |
| CN102664229B (en) * | 2012-06-05 | 2015-04-08 | 泉州万明光电有限公司 | Light emitting diode light source structure |
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| WO2006058473A1 (en) | 2006-06-08 |
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