WO2006035699A1 - 誘電体磁器組成物およびこれを用いた電子部品 - Google Patents
誘電体磁器組成物およびこれを用いた電子部品 Download PDFInfo
- Publication number
- WO2006035699A1 WO2006035699A1 PCT/JP2005/017609 JP2005017609W WO2006035699A1 WO 2006035699 A1 WO2006035699 A1 WO 2006035699A1 JP 2005017609 W JP2005017609 W JP 2005017609W WO 2006035699 A1 WO2006035699 A1 WO 2006035699A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dielectric
- composition
- powder
- batio
- multilayer ceramic
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 83
- 229910052573 porcelain Inorganic materials 0.000 title claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims description 57
- 239000003985 ceramic capacitor Substances 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 238000005275 alloying Methods 0.000 claims 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 2
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 abstract 2
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 abstract 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 abstract 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 abstract 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 38
- 239000003990 capacitor Substances 0.000 description 33
- 238000010304 firing Methods 0.000 description 27
- 238000009413 insulation Methods 0.000 description 27
- 230000007423 decrease Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000012298 atmosphere Substances 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000005245 sintering Methods 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 229910000990 Ni alloy Inorganic materials 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 5
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910052689 Holmium Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000004014 plasticizer Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000075 oxide glass Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 239000010938 white gold Substances 0.000 description 1
- 229910000832 white gold Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3241—Chromium oxides, chromates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3256—Molybdenum oxides, molybdates or oxide forming salts thereof, e.g. cadmium molybdate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
- C04B2235/3436—Alkaline earth metal silicates, e.g. barium silicate
Definitions
- the present invention relates to a dielectric ceramic composition and an electronic component using the same.
- the present invention relates to a multilayer ceramic capacitor using a dielectric ceramic composition.
- a multilayer ceramic capacitor is composed of an internal electrode, an external electrode, and a dielectric disposed between these electrodes.
- the dielectric is a magnetic material mainly composed of titanate (for example, BaTiO: barium titanate).
- a multilayer ceramic capacitor provided with such a dielectric can be compact and have a large capacity.
- the capacitor has good electrical characteristics in a high frequency band and is excellent in heat resistance, and has the advantages of being suitable for mass production.
- each green sheet is sintered into a ceramic dielectric layer, and the metal powder in each conductive paste is sintered into an internal electrode.
- a pair of external electrodes is formed on the surface of the fired laminate. Each external electrode is configured to conduct with a predetermined set of internal electrodes.
- the sintered state of the BaTiO-based ceramic composition must be appropriate in order to improve the dielectric characteristics. So
- the firing temperature for the porcelain composition is set to a high temperature of about 1100 to 1350 ° C. It is necessary to
- the metal material forming the internal electrode When firing the porcelain composition, the metal material forming the internal electrode also undergoes a firing step and is exposed to the same high temperature. From the circumstances, metal materials for internal electrodes are required to have the following properties. That is, it has a melting point higher than the above firing temperature, is fired at the same temperature as the porcelain composition, and is not substantially oxidized in the firing step.
- Ni and Ni alloys have a melting point higher than the sintering temperature of the BaTiO ceramic composition
- Ni and Ni alloys have the advantage of low specific resistance. However, Ni easily oxidizes when fired at a high temperature in an atmosphere containing oxygen, such as in the air, and the final electrode may not function normally. In addition, Ni oxides can dissolve into porcelain compositions and degrade capacitor performance.
- the dielectric material exhibits semiconducting properties, resulting in a decrease in insulation.
- oxygen vacancy is produced in the BaTiO ceramic composition.
- This material has the advantage that even when fired in a reducing atmosphere, there is little performance degradation such as a decrease in non-insulation resistance.
- An example of this material is a composition with a molar ratio of BaOZTiO greater than 1.
- multilayer ceramic capacitors are required to have higher performance than before. Miniaturization and high performance of electronic devices require higher density mounting of electronic components. For this reason, individual parts are required to be small and unaffected by temperature rise. In addition to these requirements, multilayer ceramic capacitors require a larger capacity.
- the porcelain composition constituting the dielectric layer has the following four characteristics. First, the insulation resistance is large, secondly, the deterioration of the insulation resistance over time is small, third, the change in capacitance with temperature is small, and fourth, the capacitance when a DC voltage is applied. There is little decrease.
- Patent Documents 1 to 4 disclose attempts for such improvement.
- Patent Document 1 Japanese Patent Laid-Open No. 6-5460
- Patent Document 2 Japanese Patent Laid-Open No. 6-342735
- Patent Document 3 JP-A-8-124785
- Patent Document 4 Japanese Patent Laid-Open No. 9-171937
- the present invention has been conceived under such circumstances, and provides a reduction-resistant dielectric ceramic composition having the above four properties and having a large dielectric constant. To do With the goal.
- Another object of the present invention is to provide an electronic component, particularly a multilayer ceramic capacitor, using the composition.
- this dielectric ceramic yarn is composed of MnO, Cr O and
- a dielectric ceramic composition is provided.
- This dielectric ceramic composition is composed of 100 mol parts of BaTiO, which is the main component, x mol parts of MnO, Cr O and
- Rare earth oxides selected from the group consisting of Y 2 O, Ho 2 O, Dy 2 O and Er 2 O
- the dielectric ceramic composition of the present invention further includes at least one of WO and ⁇ .
- the present inventors have found that these dielectric ceramic compositions can exhibit a dielectric constant of 3000 or more at a thickness of 1 to 5 ⁇ m.
- the dielectric material is composed of these dielectric ceramic compositions!
- the multilayer ceramic capacitor is an insulation resistance that is applied by applying a DC voltage of 30 V / ⁇ m at a temperature of 200 ° C.
- the time required for the insulation resistance to reach 1 X 10 5 ⁇ is 1 hour or longer, the temperature dependence of the capacitance satisfies the X5R characteristics specified in the standard, and AC It shows good characteristics that the rate of decrease in capacitance is 30% or less when AC voltage (1kHz, IVrms) and DC voltage (2V / ⁇ m) are applied with voltage (1kHz, IVrms) applied.
- the inventor has found that it can be obtained.
- the dielectric ceramic composition of the present invention has a high relative dielectric constant, and when it constitutes a dielectric material of a multilayer ceramic capacitor, the insulation resistance of the capacitor is deteriorated over time and the temperature changes. It is possible to sufficiently suppress both the change in capacitance with respect to and the decrease in capacitance when a DC voltage is applied.
- the present invention has a laminated structure including a ceramic dielectric and an electrode.
- a multilayer ceramic capacitor is provided.
- the ceramic dielectric is
- the dielectric ceramic composition has one of the configurations described above with respect to the first and second aspects of the present invention.
- the electrode is made of Ni or an alloy containing Ni.
- an electronic component is provided.
- This electronic component has a portion made of a dielectric ceramic composition having one of the configurations described above with respect to the first and second aspects of the present invention.
- FIG. 1 is a cross-sectional view of a multilayer ceramic capacitor according to the present invention.
- FIG. 2 is a table showing the composition (excluding BaTiO) of the dielectric ceramic composition constituting the dielectric layer in the multilayer ceramic capacitors of Samples 1 to 21.
- FIG. 3 is a table showing the composition (excluding BaTiO) of the dielectric ceramic composition constituting the dielectric layer in the multilayer ceramic capacitors of Samples 22 to 41.
- FIG. 4 A table showing the results of a performance investigation conducted on the multilayer ceramic capacitors of Samples 1 to 21.
- FIG. 5 is a table showing the results of a performance investigation conducted on the multilayer ceramic capacitors of Samples 22 to 41.
- FIG. 1 is a cross-sectional view showing a multilayer ceramic capacitor 10 using a dielectric ceramic composition.
- the multilayer ceramic capacitor 10 has a plurality of dielectric layers 11, a plurality of internal electrodes 12, and a pair of external electrodes 13.
- Each dielectric layer 11 is made of a dielectric ceramic composition according to the present invention.
- Each internal electrode 12 is configured to be sandwiched between two overlapping dielectric layers 11.
- the plurality of internal electrodes 12 can be divided into two groups. In FIG. 1, the internal electrode 12 belonging to the first group is electrically connected to the left external electrode 13, and the internal electrode 12 belonging to the second group is electrically connected to the right external electrode 13. is doing.
- Each internal electrode 12 is made of M or Ni alloy, and each external electrode 13 is made of Cu or Cu alloy, for example.
- the dielectric ceramic composition of the present invention constituting the dielectric layer 11 contains BaTiO as a main component.
- MnO is mainly contained in the dielectric ceramic composition in order to improve the reduction resistance of the dielectric ceramic composition. This reduces the insulation resistance of the dielectric ceramic composition in the manufacturing process of the multilayer ceramic capacitor 10 (due to firing in a reducing atmosphere).
- Mn (II) of MnO enters a predetermined site instead of Ti (IV) and functions as an electron acceptor, thereby exerting an effect of suppressing a decrease in insulation resistance.
- the content of is X mol part, it is preferably 0.50 ⁇ x ⁇ 2.00. Less than X force
- the dielectric constant of the dielectric ceramic composition tends to decrease, and the sintering temperature necessary to obtain a dense sintered body in the composition tends to increase.
- Cr O and Z or Co O are mainly used for the capacitance of the multilayer ceramic capacitor 10.
- the inhibitory action is also relatively high. Cr O and Co O of 100 mole parts of BaTiO
- the oxide is mainly contained in the dielectric ceramic composition in order to reduce the deterioration over time of the insulation resistance of the multilayer ceramic capacitor 10 (that is, to extend the accelerated life of the insulation resistance of the multilayer ceramic capacitor 10). Is done.
- These rare earth elements Y, Ho, D y, Er
- Y, Ho, D y, Er is considered to function as an electron donor and capture oxygen vacancies in the dielectric ceramic composition, thereby exerting an effect of suppressing deterioration of the insulation resistance over time.
- the total content of these rare earth oxides relative to 3 parts is X mole part (only one is selected.
- one of them is X mole part), and preferably 0.50 ⁇ x ⁇ 2.00.
- BaSiO is mainly used in the firing step of the manufacturing process of the multilayer ceramic capacitor 10 described later.
- the dielectric ceramic composition In order to promote sintering of the dielectric ceramic composition, it is contained in the dielectric ceramic composition.
- BaSiO is fired mainly at the grain boundaries of BaTiO during the sintering of dielectric ceramic compositions.
- the dielectric ceramic composition of the present invention further includes WO for improving its heat resistance.
- the insulation resistance of the multilayer ceramic capacitor 10 may be unduly lowered, or the capacitance change with temperature may be unduly large.
- the multilayer ceramic capacitor 10 for example, first, BaTi O powder as a main component, MnO powder, and Cr, Co, Y, Ho, Dy, Er, W, Mo as required. Acid
- BaSiO which is an oxide glass
- SiO powder uses BaCO powder and SiO powder as basket baskets.
- the mixture is wet-mixed using a slurry, fired in air at 1250 ° C, for example, and pulverized until the average particle size becomes 0.1 m or less.
- the calcined raw material powder is mixed with oxide glass (BaSiO 3) powder, organic binder,
- a plasticizer, a solvent, a dispersant and the like are added, and these are kneaded (kneaded) to prepare a slurry.
- a plurality of green sheets having a predetermined slurry thickness are prepared by a doctor blade method or the like.
- a conductive paste containing metal powder for forming internal electrodes is printed on the surface of each green sheet.
- the plurality of green sheets having the conductive paste printed on the surface in this manner are pressure-bonded in a state where the conductive paste and the green sheets are alternately stacked.
- the firing process is performed at a firing temperature exceeding 1350 ° C, Ni or Ni alloy tends to agglomerate and is fired in an island-like form, resulting in the formation of a disconnected internal electrode 12 There is. Therefore, the firing temperature is preferably 1350 ° C or lower.
- a pair of external electrodes 13 that are terminals for connection to an external circuit are formed at predetermined positions of the laminate. Specifically, after the conductive paste containing the metal powder for forming the external electrode is printed on a predetermined surface of the laminate, the external electrode 13 is formed from the conductive paste by firing at a predetermined temperature.
- the multilayer ceramic capacitor 10 can be manufactured as described above.
- the BaTiO-based dielectric ceramic composition of the present invention constituting the multilayer ceramic capacitor 10 is:
- the dielectric ceramic composition of the present invention When undergoing firing in a reducing atmosphere as in the above-described firing step, it exhibits reduction resistance. It is possible to maintain a high insulation resistance.
- the dielectric ceramic composition of the present invention can exhibit a high relative dielectric constant of 3000 or more at a thickness of 1 to 5 ⁇ m.
- the multilayer ceramic capacitor 10 in which the dielectric layer 11 is composed of the dielectric ceramic composition of the present invention has an insulation resistance obtained by applying a DC voltage of m under a temperature condition of 200 ° C.
- the time until the insulation resistance reaches 1 X 10 5 ⁇ or less is 1 hour or more, the temperature dependence of the capacitance satisfies the X5R characteristics specified in the standard, and the AC voltage (1 kHz, Good characteristics can be exhibited when the rate of decrease in capacitance is 30% or less when AC voltage (1 kHz, lVrms) and DC voltage (2 V / ⁇ m) are applied in a superimposed manner.
- the multilayer ceramic capacitor 10 in which the dielectric layer 11 is composed of the dielectric ceramic composition of the present invention has a capacitance resistance product (CR product) of 25 ° C. under a high electric field strength (5 VZ wm). Good characteristics of 1500 ⁇ 'F or more and breakdown voltage of 70VZm or more can be exhibited.
- a plurality of multilayer ceramic capacitors having the structure shown in Fig. 1 were prepared as Samples 1 to 41. These capacitors are configured so that the composition of the dielectric material layer is different.
- the table of Fig. 2 and Fig. 3 shows the composition of the dielectric ceramic composition (excluding BaTiO) that constitutes the dielectric layer of each sample capacitor. In the tables of Figures 2 and 3, BaTiO 10
- the acid selected from the powder according to the target composition is weighed and mixed. Then this
- the mixture was calcined at 1100 ° C for 7 hours. Further, the mixed powder was pulverized to obtain an oxide powder having an average particle size of 0.1 m or less.
- a raw material powder was prepared by blending the oxide powder and glass powder obtained as described above with a predetermined composition. Furthermore, 700 g of binder solution (including PVB resin, plasticizer, toluene, ethanol, dispersant, etc.) was added to this raw powder lOOOg, and then dispersed for 3 hours using a basket mill. As a result, a slurry having a viscosity of about 200 cps was prepared.
- binder solution including PVB resin, plasticizer, toluene, ethanol, dispersant, etc.
- the slurry thus prepared was applied onto a PET film by a doctor blade method to produce a plurality of green sheets having a thickness of 1.5 / zm.
- a conductive paste for internal electrodes was printed on each green sheet to a thickness of 1.5 m.
- the conductive paste for internal electrodes 100 parts by weight of Ni powder having an average particle size of 0.2 ⁇ m, 30 parts by weight of an organic vehicle (8 parts by weight of ethyl cellulose resin dissolved in 92 parts by weight of butyl carbitol) In addition, 8 parts by weight of butyl carbitol was used in a paste form.
- the internal electrode conductive paste and the green sheet are separated from each other.
- the layers were stacked so that they were alternately positioned (effective number of layers: 420), and thermocompression bonded.
- the heating temperature at this time was 70 ° C, and the pressure was lOOOkgZcm 2 .
- this laminate was cut into a predetermined size to obtain a green chip. Thereafter, the green chip was subjected to binder removal treatment by heating at 450 ° C. for 5 hours in a nitrogen atmosphere (temperature increase rate: 30 ° C. Z time).
- the green chip is attached! By heating in a mixed atmosphere of humidified nitrogen and hydrogen at 1100-1350 ° C for 4 hours (temperature increase rate: 200 ° CZ time) ) And firing treatment.
- the dielectric ceramic composition in each green sheet is sintered to form a dielectric layer, and the Ni powder in each conductive paste is sintered to form an internal electrode.
- the firing temperature was specified in advance for each type of green chip or green sheet. Specifically, for the sample having the same configuration as each green chip, firing was performed at different firing temperatures, and the lower firing temperature for obtaining a dense sintered body was determined.
- the laminated body sintered by the firing process is heated in a humidified nitrogen atmosphere at 1000 to: L100 ° C for 3 hours (temperature increase / temperature decrease rate 200). Annealing was performed for ° CZ time).
- a predetermined end face of the obtained sintered laminate was polished by barrel treatment, and then a conductive paste for external electrodes was applied or transferred to the polished portion.
- the conductive paste for the external electrode 100 parts by weight of a mixture of spherical Cu powder having an average particle diameter of 0.4 m and flaky Cu powder in a predetermined ratio, and organic vehicle (ethyl cellulose resin 5 wt. 30 parts by weight of butyl carbitol and 6 parts by weight of butyl carbitol were mixed and used to paste.
- the sintered laminate with the external electrode conductive paste applied on the surface in this manner is baked at 850 ° C for 10 minutes in a nitrogen atmosphere, so that the external electrode is removed from the conductive paste. Formed.
- capacitors of Samples 1 to 41 were produced.
- the size is 2.1mm long x 1.25mm wide x 1.25mm thick
- each effective dielectric layer is 1.2m thick (effective stacking number 420)
- the thickness of the internal electrode is about It was 1.2 m.
- Figures 4 and 5 show the measured characteristics of each of Samples 1 to 41.
- the characteristics measured here are the CR product (capacitance product) that is an index of insulation resistance, the IR accelerated life that is an index of deterioration of insulation resistance over time, and the EIA standard that is an index of temperature dependence of capacitance.
- DC Bias characteristics relative dielectric constant, dielectric loss tan ⁇ (%), breakdown voltage, solder heat resistance
- the capacitance of the capacitor is measured, and a direct current of 5 V per 1 m thickness of the dielectric layer is measured.
- the value of insulation resistance for 1 minute when voltage was applied to the capacitor was measured.
- the product of CR was obtained by multiplying these capacitance and insulation resistance for 1 minute.
- the CR product is an index of the insulation resistance, and is therefore an index of the reduction resistance of the dielectric ceramic composition constituting the dielectric layer.
- Relative permittivity and dielectric loss tan ⁇ (%) are calculated under the conditions of lVrms and 1.0kHz from the capacitance, electrode area, and dielectric thickness at 25 ° C in a multilayer ceramic capacitor. The value of was obtained.
- the multilayer ceramic capacitor can be immersed in a solder bath (350 ° C) for 30 seconds, left at room temperature for 24 hours, and left in a thermostatic bath (25 ° C) for 10 minutes. After that, the CR product was calculated as described above. The CR product value was 1500 ⁇ 'F or more, and there were no defects such as cracks on the external appearance of the capacitor.
- the CR product is relatively low and the solder heat resistance is also low.
- the CR product is relatively high and the solder heat resistance is also high.
- the capacitor of sample 7 (not included in the present invention) does not satisfy the X5R characteristic.
- Capacitors with pull 31, 34, 36 do not satisfy X5R characteristics, DC-Bias characteristics are poor, and solder heat resistance is low. In contrast, the total content of WO and MoO is 0.10 to: L00
- the capacitors of samples 28 to 30, 32, 33 and 35 which are mole parts, satisfy X5R characteristics, have good DC bias characteristics, and have high solder heat resistance!
- the BaSiO content is less than 0.25 mol parts per 100 mol parts of BaTiO.
- the dielectric constant is relatively high.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004281346A JP2006096574A (ja) | 2004-09-28 | 2004-09-28 | 誘電体磁器組成物、積層型セラミックコンデンサ、および電子部品 |
JP2004-281346 | 2004-09-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006035699A1 true WO2006035699A1 (ja) | 2006-04-06 |
Family
ID=36118845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/017609 WO2006035699A1 (ja) | 2004-09-28 | 2005-09-26 | 誘電体磁器組成物およびこれを用いた電子部品 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2006096574A (ja) |
TW (1) | TW200631919A (ja) |
WO (1) | WO2006035699A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105693220A (zh) * | 2016-02-24 | 2016-06-22 | 杭州电子科技大学 | 一种正温度系数硅酸盐微波介质陶瓷材料及其制备方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007331957A (ja) * | 2006-06-12 | 2007-12-27 | Tdk Corp | 誘電体磁器組成物、電子部品およびその製造方法 |
JP2009212255A (ja) * | 2008-03-04 | 2009-09-17 | Tdk Corp | コイル部品及びその製造方法 |
JP5245595B2 (ja) * | 2008-07-15 | 2013-07-24 | 株式会社村田製作所 | 積層セラミックコンデンサの故障寿命評価方法 |
US8178458B2 (en) * | 2009-12-01 | 2012-05-15 | National Taiwan University Technology | Dielectric ceramic composition |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05174626A (ja) * | 1991-12-17 | 1993-07-13 | Tdk Corp | 耐還元性誘電体磁器組成物 |
JP2000154057A (ja) * | 1998-07-29 | 2000-06-06 | Tdk Corp | 誘電体磁器組成物および電子部品 |
-
2004
- 2004-09-28 JP JP2004281346A patent/JP2006096574A/ja active Pending
-
2005
- 2005-09-26 WO PCT/JP2005/017609 patent/WO2006035699A1/ja active Application Filing
- 2005-09-27 TW TW094133572A patent/TW200631919A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05174626A (ja) * | 1991-12-17 | 1993-07-13 | Tdk Corp | 耐還元性誘電体磁器組成物 |
JP2000154057A (ja) * | 1998-07-29 | 2000-06-06 | Tdk Corp | 誘電体磁器組成物および電子部品 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105693220A (zh) * | 2016-02-24 | 2016-06-22 | 杭州电子科技大学 | 一种正温度系数硅酸盐微波介质陶瓷材料及其制备方法 |
CN105693220B (zh) * | 2016-02-24 | 2020-10-27 | 杭州电子科技大学 | 一种正温度系数硅酸盐微波介质陶瓷材料及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2006096574A (ja) | 2006-04-13 |
TW200631919A (en) | 2006-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4491794B2 (ja) | 誘電体セラミック、及び積層セラミックコンデンサ | |
JP4626892B2 (ja) | 誘電体セラミック、及び積層セラミックコンデンサ | |
JP4821357B2 (ja) | 電子部品、誘電体磁器組成物およびその製造方法 | |
JP5246185B2 (ja) | 誘電体セラミック、及び積層セラミックコンデンサ | |
JP5461774B2 (ja) | 電子部品およびその製造方法 | |
JP4341675B2 (ja) | 誘電体セラミック組成物及び積層セラミックコンデンサ | |
JP5224147B2 (ja) | 誘電体セラミック、及び積層セラミックコンデンサ | |
JP4831142B2 (ja) | 誘電体セラミックおよび積層セラミックコンデンサ | |
JP4622537B2 (ja) | 誘電体磁器組成物および電子部品 | |
JP3180681B2 (ja) | 積層セラミックコンデンサ | |
KR100720804B1 (ko) | 세라믹 전자 부품 및 그 제조방법 | |
JP4697582B2 (ja) | 誘電体セラミック及び誘電体セラミックの製造方法、並びに積層セラミックコンデンサ | |
JP3882054B2 (ja) | 積層セラミックコンデンサ | |
WO2002000568A1 (fr) | Compositions a base de porcelaine dielectrique et pieces electroniques en rapport | |
JP3961454B2 (ja) | 低温焼成誘電体磁器組成物とこれを用いた積層セラミックキャパシター | |
KR100859058B1 (ko) | 적층형 전자 부품 및 그 제조 방법 | |
WO2006035699A1 (ja) | 誘電体磁器組成物およびこれを用いた電子部品 | |
JP4576807B2 (ja) | 誘電体磁器組成物および電子部品 | |
JP3908458B2 (ja) | 誘電体磁器組成物の製造方法 | |
JP3389220B2 (ja) | 誘電体磁器組成物、電子部品および電子部品の製造方法 | |
JP3520053B2 (ja) | 誘電体磁器組成物、電子部品および電子部品の製造方法 | |
JP3942776B2 (ja) | 誘電体組成物 | |
US7351676B2 (en) | Dielectric porcelain composition, multilayer ceramic capacitor, and electronic component | |
JP3634930B2 (ja) | 誘電体磁器組成物 | |
JP4752327B2 (ja) | 誘電体セラミック組成物および積層セラミックコンデンサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KM KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 05785982 Country of ref document: EP Kind code of ref document: A1 |