WO2006012112A3 - Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment - Google Patents

Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment Download PDF

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Publication number
WO2006012112A3
WO2006012112A3 PCT/US2005/021894 US2005021894W WO2006012112A3 WO 2006012112 A3 WO2006012112 A3 WO 2006012112A3 US 2005021894 W US2005021894 W US 2005021894W WO 2006012112 A3 WO2006012112 A3 WO 2006012112A3
Authority
WO
WIPO (PCT)
Prior art keywords
volume
plating
auxiliary electrode
substrate
catholyte
Prior art date
Application number
PCT/US2005/021894
Other languages
French (fr)
Other versions
WO2006012112A2 (en
Inventor
Nicolay Kovarsky
Anzhong Chang
Saravjeet Singh
You Wang
John O Dukovic
Original Assignee
Applied Materials Inc
Nicolay Kovarsky
Anzhong Chang
Saravjeet Singh
You Wang
John O Dukovic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Nicolay Kovarsky, Anzhong Chang, Saravjeet Singh, You Wang, John O Dukovic filed Critical Applied Materials Inc
Priority to JP2007519279A priority Critical patent/JP2008504444A/en
Priority to KR1020077002269A priority patent/KR101248179B1/en
Publication of WO2006012112A2 publication Critical patent/WO2006012112A2/en
Publication of WO2006012112A3 publication Critical patent/WO2006012112A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/16—Regeneration of process solutions
    • C25D21/22—Regeneration of process solutions by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

An apparatus and method for plating a metal layer onto a substrate is provided. A catholyte volume is positioned to receive a substrate for plating. An anolyte volume having one or more anode segments positioned therein is ionically separated from the catholyte volume. An auxiliary volume having an auxiliary electrode positioned therein is provided to be electrically isolated from the anolyte fluid volume and in ionic communication with the catholyte volume. A method of plating includes a first stage of plating a thin metal seed uniformly in the center and near the edges of the substrate by providing a current pulse from two power supplies which are in reverse electrical polarity with one anode segment and the auxiliary electrode. Thereafter, gap filling of features and bulk metal plating are performed by applying a second current pulse to all anode segments.
PCT/US2005/021894 2004-06-28 2005-06-20 Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment WO2006012112A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007519279A JP2008504444A (en) 2004-06-28 2005-06-20 Electrochemical plating cell with auxiliary electrode in isolated anolyte compartment
KR1020077002269A KR101248179B1 (en) 2004-06-28 2005-06-20 Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/880,103 US20050284751A1 (en) 2004-06-28 2004-06-28 Electrochemical plating cell with a counter electrode in an isolated anolyte compartment
US10/880,103 2004-06-28

Publications (2)

Publication Number Publication Date
WO2006012112A2 WO2006012112A2 (en) 2006-02-02
WO2006012112A3 true WO2006012112A3 (en) 2006-06-22

Family

ID=35427602

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/021894 WO2006012112A2 (en) 2004-06-28 2005-06-20 Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment

Country Status (5)

Country Link
US (1) US20050284751A1 (en)
JP (1) JP2008504444A (en)
KR (1) KR101248179B1 (en)
TW (1) TW200606283A (en)
WO (1) WO2006012112A2 (en)

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EP1939329B1 (en) * 2006-12-29 2011-05-11 RENA GmbH Kit for the manufacture of a process reactor for forming metallic layers on one or more substrate
US7842173B2 (en) * 2007-01-29 2010-11-30 Semitool, Inc. Apparatus and methods for electrochemical processing of microfeature wafers
WO2010104004A1 (en) * 2009-03-10 2010-09-16 オルガノ株式会社 Ion adsorption module and method of treating water
US8508018B2 (en) * 2010-09-24 2013-08-13 Intel Corporation Barrier layers
TWI550139B (en) 2011-04-04 2016-09-21 諾菲勒斯系統公司 Electroplating apparatus for tailored uniformity profile
WO2018013868A1 (en) 2016-07-13 2018-01-18 Alligant Scientific, LLC Electrochemical methods, devices and compositions
CN113423874B (en) * 2018-12-28 2024-03-15 盛美半导体设备(上海)股份有限公司 Electroplating device and electroplating method
CN115896904B (en) * 2023-03-09 2023-05-30 苏州智程半导体科技股份有限公司 Wafer electroplating chamber structure

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US20040007467A1 (en) * 2002-05-29 2004-01-15 Mchugh Paul R. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces

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Also Published As

Publication number Publication date
TW200606283A (en) 2006-02-16
JP2008504444A (en) 2008-02-14
WO2006012112A2 (en) 2006-02-02
US20050284751A1 (en) 2005-12-29
KR101248179B1 (en) 2013-03-27
KR20070027753A (en) 2007-03-09

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