WO2005088728A1 - Pn-diode auf der basis von siliciumcarbid und verfahren zu deren herstellung - Google Patents
Pn-diode auf der basis von siliciumcarbid und verfahren zu deren herstellung Download PDFInfo
- Publication number
- WO2005088728A1 WO2005088728A1 PCT/EP2005/051111 EP2005051111W WO2005088728A1 WO 2005088728 A1 WO2005088728 A1 WO 2005088728A1 EP 2005051111 W EP2005051111 W EP 2005051111W WO 2005088728 A1 WO2005088728 A1 WO 2005088728A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- emitter
- diode
- trough
- cell
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 14
- 238000005516 engineering process Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 16
- 238000002513 implantation Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 208000012868 Overgrowth Diseases 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 230000008707 rearrangement Effects 0.000 description 5
- 230000035876 healing Effects 0.000 description 4
- 239000004922 lacquer Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Definitions
- the invention relates to a pn diode based on SiC according to the preamble of claim 1.
- the invention also relates to a method for producing such a pn diode.
- Highly blocking pn diodes made of silicon carbide are characterized by a very flat emitter (d ⁇ 600 nm), if this is typically produced by an aluminum (AI) implantation, and by large local fields occur in the area of the space charge zone near the surface.
- a very flat emitter d ⁇ 600 nm
- AI aluminum
- the field peaks occur in the volume directly below the anode / edge transition, but remain locally limited.
- a very large doping concentration of acceptors in the near-surface emitter area is required, typically between 1 * 10 19 and 5 * 10 19 cm -3 , which is too inhomogeneous due to the described rearrangement effects at the high annealing temperatures can lead to lateral doping. This can be a so-called "punch through" of the space charge zone with ca result in a tactrophal breakdown at high reverse voltages.
- the yield of the diodes thus depends heavily on such material-related inhomogeneities, which can lead to step bunching of different strengths with spatially different dopant distributions.
- patent application 10 2004 012046.3-33 proposes in detail to distribute field peaks under the anode over a large area.
- JTE Joint Termination Extension
- a “contact implantation” in the region of the p-emitter with a healing step at high temperature must be carried out.
- the goal of achieving a reverse voltage yield with robust avalanche and high emitter efficiency has not yet been reliably achieved with SiC-based pn diodes.
- the object of the invention is therefore to create a new pn diode based on SiC with avalanche behavior, which achieves the latter objective, and to specify associated methods for its production.
- the invention creates a cell field with at least one trough-like shape in the emitter region of the diode.
- a structured pn junction with fillets is advantageously formed. Such roundings lead to the formation of field maxima.
- Known technologies can be used to produce such structured emitters, in particular epitaxial or ion implantation methods. In the case of the alternatives, etching using mask technology is essential in order to achieve the surfaces which are not planar according to the invention.
- the latter phenomenon is used specifically to achieve avalanche behavior.
- the trough-like design of the emitter results in a predetermined number of locations with a maximum E field in a regular arrangement, the avalanche voltage now being able to be predetermined in a targeted manner via the curvature on the one hand and the doping on the other hand.
- a methodology can be used regardless of the type of p-emitter production.
- An ion implantation technology whose process steps have been tried and tested is primarily considered.
- the reactor is usually changed when the n-doped base and transition to the p-doped emitter are grown in order to avoid process-related impurities and thus undesired doping profile inhomogeneities. This means that there is generally an interruption in the process flow after the production of the n-doped base.
- FIG. 1 shows the cross section through an arrangement for pn diodes according to the invention with the first sub-step of cell etching
- FIG. 2 shows a cross section corresponding to FIG. 1 of the finished pn diode after an emitter and edge implantation.
- a pn diode based on silicon carbide with suitable avalanche behavior should be produced. Such a Before the diode is described in detail in the applicant's parallel application cited above and filed in detail. What is important here is a cell field with emitter regions which have a concentration of the n-doping greater than in the opposite n-region. The emitter regions lie below the anode in the p — doped region.
- the usual process steps of semiconductor technology can be used to produce such a pn diode. These processes are in particular the epitaxial growth of specific layers on a wafer and / or the introduction of emitters by implantation. Furthermore, etching, especially deep etching, using a mask technique.
- the intermediate product of a pn diode consists of a cathode 1 and with silicon carbide layers applied thereon. These essentially include a wafer 10 with an n-doped layer 11 grown epitaxially thereon.
- a wafer 10 with an n-doped layer 11 grown epitaxially thereon.
- a regular structure 22 is advantageously formed.
- the anode is not shown in Figure 1.
- an outer layer 2 is applied to the structure 22 as an anode.
- the emitter is manufactured using known implantation or epitaxial technologies.
- the diode structure can be produced in a suitable manner, for example, in that in a first process step the wafer 10, which according to FIG. 1 is provided with the sufficiently thick, n-doped epitaxial layer 11, is coated with a further epitaxial layer in which the n-doping has increased values.
- the thickness of the epitaxial layer is determined by the desired reverse voltage.
- the epitaxial layer is covered with a photoresist layer in which the anode-side emitter region is densely covered with cell fields.
- the size of the cell fields should be as small as possible according to the technological possibilities: for example, the edge length is 5 ⁇ m to 100 ⁇ m, typically 50 ⁇ m, the distance between the rounded cell fields in the emitter region being in the range from 10 to 1000 ⁇ m, typically 100 ⁇ m.
- the next step is a deep etching of the cell field regions with a predetermined depth in the range from 10% to 50%, typically 25%, of the intended thickness of the p-doped emitter, which is illustrated in FIG. 2. Regardless of the process technology to be used, it is essential that a structured emitter with a pn junction to the n-type layer is formed.
- an implanted and subsequently healed emitter with an implantation depth of e.g. 500 nm deep etching in the range of 50 to 250 nm, typically 125 nm.
- 2 ⁇ m When using epitaxial technology with a typical emitter thickness of e.g. In contrast, 2 ⁇ m must be deep-etched in the range from 200 nm to 1000 nm, typically at 500 nm.
- lacquer thickness used for deep etching is therefore based on the respective application.
- RIE Rapid Ion Etching
- IBE Ion Beam Etching
- the deep-etching process is to be set so that a “slope angle” is obtained in the cells of the field, which enables the p-e-gritter to overgrow it Selectivity of the etching rates for lacquer and SiC reached.
- the remaining lacquer is in any case decoated by wet chemical and / or dry processes. A residue-free removal of the paint is possible.
- the described structuring of the emitter region results in field elevations on the borders of the lower-lying cell fields in the area of the emitter and a relief in those border areas which come closest to the JTE.
- the Avalanche electricity is thus triggered in terms of area and thus robustly - because it is evenly distributed at many points.
- step bunching lines and rearrangements which are caused by the still high healing temperature of the implantation, is stopped at the cell boundaries, since these border boundaries are relaxation centers for them Rearrangements. It can be observed that the density of "step bunching" - Lines or the rearrangements in the area of the lower-lying fields is significantly reduced, or can even be made to disappear. This results in a homogeneous doping concentration even in the highly doped emitter region. The consequence is improved emitter efficiency and a controlled space charge zone in the p-emitter.
- a further advantage of the arrangement is that the disturbing rearrangements usually triggered by current / temperature loads are impeded by the structuring in long-term operation, since the cell borders also act as relaxation centers in this case.
- the pn diode described above and the associated manufacturing process have the advantage of a high yield and the reliability of the SiC components produced in this way. Detection of the cell fields is optically possible in a simple manner.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05717007A EP1723680A1 (de) | 2004-03-11 | 2005-03-11 | Pn-diode auf der basis von siliciumcarbid und verfahren zu deren herstellung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004012047 | 2004-03-11 | ||
DE102004012047.1 | 2004-03-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005088728A1 true WO2005088728A1 (de) | 2005-09-22 |
Family
ID=34895260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2005/051111 WO2005088728A1 (de) | 2004-03-11 | 2005-03-11 | Pn-diode auf der basis von siliciumcarbid und verfahren zu deren herstellung |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1723680A1 (de) |
DE (1) | DE102005011703A1 (de) |
WO (1) | WO2005088728A1 (de) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03220727A (ja) * | 1990-01-26 | 1991-09-27 | Mitsubishi Electric Corp | 半導体装置 |
DE19713980A1 (de) * | 1997-04-04 | 1998-10-08 | Siemens Ag | Leistungsdiode |
DE19824514A1 (de) * | 1997-06-02 | 1998-12-03 | Fuji Electric Co Ltd | Diode und Verfahren zu ihrer Herstellung |
US5902117A (en) * | 1997-05-09 | 1999-05-11 | Abb Research Ltd. | PN-diode of SiC and a method for production thereof |
US6054748A (en) * | 1997-03-18 | 2000-04-25 | Kabushiki Kaisha Toshiba | High voltage semiconductor power device |
WO2001097272A1 (en) * | 2000-06-13 | 2001-12-20 | Abb Research Ltd. | A method for producing a pn-junction |
US20030034495A1 (en) * | 2001-07-12 | 2003-02-20 | Casady Jeffrey B. | Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation |
-
2005
- 2005-03-11 DE DE200510011703 patent/DE102005011703A1/de not_active Withdrawn
- 2005-03-11 WO PCT/EP2005/051111 patent/WO2005088728A1/de not_active Application Discontinuation
- 2005-03-11 EP EP05717007A patent/EP1723680A1/de not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03220727A (ja) * | 1990-01-26 | 1991-09-27 | Mitsubishi Electric Corp | 半導体装置 |
US6054748A (en) * | 1997-03-18 | 2000-04-25 | Kabushiki Kaisha Toshiba | High voltage semiconductor power device |
DE19713980A1 (de) * | 1997-04-04 | 1998-10-08 | Siemens Ag | Leistungsdiode |
US5902117A (en) * | 1997-05-09 | 1999-05-11 | Abb Research Ltd. | PN-diode of SiC and a method for production thereof |
DE19824514A1 (de) * | 1997-06-02 | 1998-12-03 | Fuji Electric Co Ltd | Diode und Verfahren zu ihrer Herstellung |
WO2001097272A1 (en) * | 2000-06-13 | 2001-12-20 | Abb Research Ltd. | A method for producing a pn-junction |
US20030034495A1 (en) * | 2001-07-12 | 2003-02-20 | Casady Jeffrey B. | Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation |
Non-Patent Citations (2)
Title |
---|
NEGORO Y ET AL: "AVALANCHE PHENOMENA IN 4H-SIC P-N DIODES FABRICATED BY ALUMINUM OR BORON IMPLANTATION", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, vol. 49, no. 9, September 2002 (2002-09-01), pages 1505 - 1510, XP001116657, ISSN: 0018-9383 * |
PATENT ABSTRACTS OF JAPAN vol. 015, no. 502 (E - 1147) 18 December 1991 (1991-12-18) * |
Also Published As
Publication number | Publication date |
---|---|
DE102005011703A1 (de) | 2005-09-29 |
EP1723680A1 (de) | 2006-11-22 |
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