WO2005064702A1 - Diode electroluminescente organique/macro moleculaire - Google Patents
Diode electroluminescente organique/macro moleculaire Download PDFInfo
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- WO2005064702A1 WO2005064702A1 PCT/CN2004/001417 CN2004001417W WO2005064702A1 WO 2005064702 A1 WO2005064702 A1 WO 2005064702A1 CN 2004001417 W CN2004001417 W CN 2004001417W WO 2005064702 A1 WO2005064702 A1 WO 2005064702A1
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- Prior art keywords
- group
- light emitting
- light
- layer
- emitting diode
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229920000547 conjugated polymer Polymers 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000002347 injection Methods 0.000 claims description 42
- 239000007924 injection Substances 0.000 claims description 42
- 229910052782 aluminium Inorganic materials 0.000 claims description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 32
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 30
- 229920000642 polymer Polymers 0.000 claims description 29
- 239000010931 gold Substances 0.000 claims description 27
- 239000000243 solution Substances 0.000 claims description 27
- 229910052737 gold Inorganic materials 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 125000003010 ionic group Chemical group 0.000 claims description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 11
- 125000003277 amino group Chemical group 0.000 claims description 11
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 11
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine group Chemical group NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 125000002560 nitrile group Chemical group 0.000 claims description 6
- 150000002825 nitriles Chemical class 0.000 claims description 5
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 125000000623 heterocyclic group Chemical group 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920001088 polycarbazole Polymers 0.000 claims description 3
- 229920002098 polyfluorene Polymers 0.000 claims description 3
- 150000003839 salts Chemical group 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 2
- 241000283074 Equus asinus Species 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 85
- 238000002360 preparation method Methods 0.000 description 28
- -1 polyphenylene acetylene Polymers 0.000 description 25
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 20
- 239000000047 product Substances 0.000 description 19
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 16
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 15
- 238000003756 stirring Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 10
- 229910052788 barium Inorganic materials 0.000 description 9
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 8
- 239000000178 monomer Substances 0.000 description 8
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 238000010992 reflux Methods 0.000 description 7
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000000524 functional group Chemical group 0.000 description 6
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- IEMXKVCEQAQLOJ-UHFFFAOYSA-N 1,2-dibromo-9h-carbazole Chemical compound C1=CC=C2C3=CC=C(Br)C(Br)=C3NC2=C1 IEMXKVCEQAQLOJ-UHFFFAOYSA-N 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 5
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 229910052700 potassium Inorganic materials 0.000 description 5
- 239000011591 potassium Substances 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 125000001424 substituent group Chemical class 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000000950 dibromo group Chemical group Br* 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 229920001197 polyacetylene Polymers 0.000 description 4
- FNQJDLTXOVEEFB-UHFFFAOYSA-N 1,2,3-benzothiadiazole Chemical compound C1=CC=C2SN=NC2=C1 FNQJDLTXOVEEFB-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000005964 Acibenzolar-S-methyl Substances 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229960001701 chloroform Drugs 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000000921 elemental analysis Methods 0.000 description 3
- 239000003480 eluent Substances 0.000 description 3
- 150000007857 hydrazones Chemical class 0.000 description 3
- 239000005457 ice water Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- SWJPEBQEEAHIGZ-UHFFFAOYSA-N 1,4-dibromobenzene Chemical compound BrC1=CC=C(Br)C=C1 SWJPEBQEEAHIGZ-UHFFFAOYSA-N 0.000 description 2
- YHELBZUCKNJFLX-UHFFFAOYSA-N 1-(2-ethylhexyl)-9H-carbazole Chemical compound C(C)C(CC1=CC=CC=2C3=CC=CC=C3NC12)CCCC YHELBZUCKNJFLX-UHFFFAOYSA-N 0.000 description 2
- AVXFJPFSWLMKSG-UHFFFAOYSA-N 2,7-dibromo-9h-fluorene Chemical compound BrC1=CC=C2C3=CC=C(Br)C=C3CC2=C1 AVXFJPFSWLMKSG-UHFFFAOYSA-N 0.000 description 2
- VPMJBJSLTPBZLR-UHFFFAOYSA-N 3,6-dibromobenzene-1,2-diamine Chemical compound NC1=C(N)C(Br)=CC=C1Br VPMJBJSLTPBZLR-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 2
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000012043 crude product Substances 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000012074 organic phase Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000012312 sodium hydride Substances 0.000 description 2
- 229910000104 sodium hydride Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000000967 suction filtration Methods 0.000 description 2
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000000052 vinegar Substances 0.000 description 2
- 235000021419 vinegar Nutrition 0.000 description 2
- WQONPSCCEXUXTQ-UHFFFAOYSA-N 1,2-dibromobenzene Chemical compound BrC1=CC=CC=C1Br WQONPSCCEXUXTQ-UHFFFAOYSA-N 0.000 description 1
- BPBNKCIVWFCMJY-UHFFFAOYSA-N 1-ethynyl-4-phenylbenzene Chemical group C1=CC(C#C)=CC=C1C1=CC=CC=C1 BPBNKCIVWFCMJY-UHFFFAOYSA-N 0.000 description 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- FFRBMBIXVSCUFS-UHFFFAOYSA-N 2,4-dinitro-1-naphthol Chemical compound C1=CC=C2C(O)=C([N+]([O-])=O)C=C([N+]([O-])=O)C2=C1 FFRBMBIXVSCUFS-UHFFFAOYSA-N 0.000 description 1
- VALXCIRMSIFPFN-UHFFFAOYSA-N 2,5-dibromobenzene-1,4-diol Chemical compound OC1=CC(Br)=C(O)C=C1Br VALXCIRMSIFPFN-UHFFFAOYSA-N 0.000 description 1
- APPZXBHXNCRPGM-UHFFFAOYSA-N 2-bromoethanimidamide Chemical compound NC(=N)CBr APPZXBHXNCRPGM-UHFFFAOYSA-N 0.000 description 1
- HZTPKMIMXLTOSK-UHFFFAOYSA-N 2-bromohexanoic acid Chemical compound CCCCC(Br)C(O)=O HZTPKMIMXLTOSK-UHFFFAOYSA-N 0.000 description 1
- YMDNODNLFSHHCV-UHFFFAOYSA-N 2-chloro-n,n-diethylethanamine Chemical class CCN(CC)CCCl YMDNODNLFSHHCV-UHFFFAOYSA-N 0.000 description 1
- NZWIYPLSXWYKLH-UHFFFAOYSA-N 3-(bromomethyl)heptane Chemical compound CCCCC(CC)CBr NZWIYPLSXWYKLH-UHFFFAOYSA-N 0.000 description 1
- LJQNMDZRCXJETK-UHFFFAOYSA-N 3-chloro-n,n-dimethylpropan-1-amine;hydron;chloride Chemical compound Cl.CN(C)CCCCl LJQNMDZRCXJETK-UHFFFAOYSA-N 0.000 description 1
- FEOWHLLJXAECMU-UHFFFAOYSA-N 4,7-dibromo-2,1,3-benzothiadiazole Chemical compound BrC1=CC=C(Br)C2=NSN=C12 FEOWHLLJXAECMU-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-BJUDXGSMSA-N Nitrogen-13 Chemical compound [13N] QJGQUHMNIGDVPM-BJUDXGSMSA-N 0.000 description 1
- UDEWJPUSGZVXJV-UHFFFAOYSA-N OS(CCCCC1=CC=CC2=C1CC1=CC=CC=C21)(=O)=O Chemical compound OS(CCCCC1=CC=CC2=C1CC1=CC=CC=C21)(=O)=O UDEWJPUSGZVXJV-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 241001126918 Sycon Species 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- MZVQCMJNVPIDEA-UHFFFAOYSA-N [CH2]CN(CC)CC Chemical group [CH2]CN(CC)CC MZVQCMJNVPIDEA-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- XDFCIPNJCBUZJN-UHFFFAOYSA-N barium(2+) Chemical compound [Ba+2] XDFCIPNJCBUZJN-UHFFFAOYSA-N 0.000 description 1
- 210000001185 bone marrow Anatomy 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- RDHPKYGYEGBMSE-UHFFFAOYSA-N bromoethane Chemical compound CCBr RDHPKYGYEGBMSE-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- MHYFEEDKONKGEB-UHFFFAOYSA-N oxathiane 2,2-dioxide Chemical compound O=S1(=O)CCCCO1 MHYFEEDKONKGEB-UHFFFAOYSA-N 0.000 description 1
- FWFGVMYFCODZRD-UHFFFAOYSA-N oxidanium;hydrogen sulfate Chemical compound O.OS(O)(=O)=O FWFGVMYFCODZRD-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 description 1
- 229910000367 silver sulfate Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- UDWXLZLRRVQONG-UHFFFAOYSA-M sodium hexanoate Chemical compound [Na+].CCCCCC([O-])=O UDWXLZLRRVQONG-UHFFFAOYSA-M 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
- 230000005418 spin wave Effects 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920006027 ternary co-polymer Polymers 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
Definitions
- the present invention relates to a photovoltaic device, and in particular, a light-emitting diode having a extinguished light using a conjugated polymer containing a strong polar component of a polar group or an ionic group as an electron injection layer.
- Conjugated polymers are a class of polymers with large ⁇ bonds along the ⁇ ⁇ chain.
- the main chain of a conjugated polymer is generally composed of C "C single and double bonds alternately connected, the polymerization unit is 01.
- the electronic orbital of the carbon atom is sp 2 hybrid, and the three coplanar angles formed It is a 120 ° hybrid orbit.
- the Peng orbital is bonded to the adjacent carbon atom orbital to form a planar polyacetylene frame.
- the remaining unbonded P orbitals are perpendicular to this plane, and they overlap each other to form a common coordinator.
- the yoke system is similar to the one-dimensional alkali metal system. According to the calculations of ⁇ and quantum theory, when the chain length of trans polyacetylene is larger than 8 carbon atoms, it has electronic conductivity, but this kind of long The yoke system is unstable, and the Peierls phase transition will cause the energy band to split.
- the original P electrons form two subbands, namely the bond ⁇ orbital constitutes the valence band, the antibond ⁇ 3 ⁇ 43 ⁇ 4 channel constitutes the conduction band, and the bond and antibond.
- the band gap formed by the energy gap between the orbitals.
- Conductive polymers Due to the strong delocalization of electrons, stable excited and freely migrating carriers can be generated, which makes the conjugated polymer exhibit conductive properties.
- Conductive polymers also have Phases of inorganic materials for the same or similar applications , Has the advantages of low density, easy processing, wide range of synthesis options, etc. Due to the conjugate nature of this kind of material structure, it can transfer charges and be excited by light, so that it can or may be used in many electronic or optoelectronic devices, For example, high-intensity light-emitting diodes (PLEDs), photodiodes, field-effect transistors (FETs), etc. Potential application prospects and a wide range of applications have prompted scientists to compete to study such conjugate materials with optoelectronic activity.
- PLEDs high-intensity light-emitting diodes
- FETs field-effect transistors
- High ⁇ f with aromatic ring or heterocyclic structure is usually Who absorbs 300 "600 nanometers of photons and releases the corresponding energy when they form a key orbit from the anti-bond orbit.
- photons of the corresponding wavelength in the visible region are emitted, which is the electroluminescence process of high- ⁇ T materials.
- the light-emitting process of this type of electroluminescent device injects holes and electrons from the positive and negative electrodes into the light-emitting layer, and the hole-electron pair is electrically transferred in the polymer layer and captured each other to form an electrically neutral
- the bound excited state is the exciton state, and the radiation of the exciton emits a corresponding photon.
- the electroluminescence process of the high-emitting materials includes the formation of exciton and the decay of the exciton.
- the former includes the injection of carriers, the transport of carriers, and the mutual trapping shape of the carriers.
- the latter includes competition between radiation and emission processes.
- S 0
- the intersystem string ® from the triplet to the singlet state is almost impossible, so the spin is allowed to govern Luminescence (fluorescence) comes only from the singlet state.
- the first condition is to have an efficient and balanced carrier injection and.
- the simplest structure of the existing organic conjugated polymer light-emitting diode is a single-layer sandwich type, as shown in FIG. 1, which is composed of a cathode 1, a light-emitting layer 2, a hole injection layer 3, an anode 4, and a substrate 5 in order.
- a cathode 1 barium / aluminum metal is used for the cathode
- a conjugated polymer film is used for the light-emitting layer
- a PEDOT film is used for the hole injection layer
- an indium tin oxide conductive layer is used for the anode
- a glass is used for the substrate.
- the anode one uses indium tin oxide (IT0), which is transparent to visible light and has a high work function, as the electrode material, and the spin-coated high polymer ⁇ 3 ⁇ 4 material PEDOT layer is used as the electrode layer.
- I0 indium tin oxide
- PEDOT spin-coated high polymer ⁇ 3 ⁇ 4 material
- the cathode one Use low work function alkali metals (eg, potassium, lithium, cesium) or alkaline earth metals (eg, calcium, barium, etc.).
- the barrier height of electron injection (equal to the difference between the LIM0 level of the conjugated polymer material and the Fermi level of aluminum) is much higher than the potential height of the hole injection (equal to the conjugated polymer material) Difference between the HC 0 energy level and the Fermi level of indium tin oxide), and its teleportation hole mobility is much lower, in this case, the application of stable metals in the production of high-performance electroluminescent devices is greatly limited .
- lithium fluoride, etc. or surfactants have excellent effects in combination with aluminum, but they are much less effective for other metals with higher work functions.
- the electrode stabilizes the metal element to realize the electron injection of the light emitting diode.
- the purpose of the present invention is to provide a m / polymer light-emitting diode, and use a conjugated polymer containing a polar group or an ionic group of a strongly polar component as its electron injection layer.
- the yoke polymer has excellent electron injection characteristics, and the obtained L / high light emitting diode has high quantum efficiency.
- the object of the present invention is also to provide a high-molecular light-emitting diode, using a conjugated polymer containing a strong polar component containing a polar group or an ionic group as its electron injection layer.
- High work function metal which has the same or more quantum efficiency as the low work function pull-in electrode, has long-term stability and has a light emitting diode, which is suitable for high flat display.
- the a / high light emitting diode of the present invention is composed of a cathode, a light emitting diode, an anode, and a substrate, and is characterized in that a hole injection layer (3) is provided between the light emitting layer (2) and the anode (4).
- An electron injection layer (6) is provided between the cathode (1) and the light emitting layer (2), and the electron injection layer uses a polar unit conjugated polymer containing a polar group or an ionic group.
- the light-emitting layer (2) and the electron injection layer (6) can also be combined into one layer, and this layer is a hair emission at the same time;) fc and the electron injection layer adopt polar units containing polar groups or ionic groups Conjugated polymers.
- the organic / polymer light emitting diode of the present invention has m / high light emission, which is formed by stacking a cathode 1, a light emitting layer 2, a hole injection layer 3, an anode 4, and a substrate 5 in this order.
- an electron 3 ⁇ 4 layer 6 is provided between the cathode and the light-emitting layer.
- the 3 ⁇ 4 electron injection layer uses a conjugated polymer of a polar unit containing a polar group or an ionic group.
- a conjugated polymer containing a polar unit of a polar group or an ionic group has the following structure:
- A is a polar component containing a polar group or an ionic group, and has a combination of one or more of the following structures:
- the components of the ionic group have one or more of the following structures ⁇
- G is a heterocyclic ring that may contain sulfur, nitrogen, and selenium, such as benzothiadiazole, benzoseladiazole;
- a conjugated polymer containing polar units containing polar groups or ionic groups can be obtained by coupling reactions of ⁇ ⁇ to Mil Suzuki.
- the cathode metal may be a low work function metal or a high work function metal.
- ⁇ m / high light-emitting diodes In order to overcome the low work function metal's easy reaction with water and oxygen, which causes rapid aging and failure of the device, and the processing difficulties caused by iWd, and to overcome the low electron injection efficiency of high work function metal, ⁇ m / high light-emitting diodes During the process, a solution of the above polar group or ionic group polymer is rotated, and a thin layer is coated on the light-emitting layer to form an electron injection layer, and then a high-efficiency metal is plated thereon. Get good environmental stability! Efficient! Balanced electrons are injected into the light emitting diode.
- the high work function metals are gold, aluminum, copper, silver, indium, nickel, lead, tin, carbon, graphite, or alloys thereof.
- the light-emitting layer can be a light-emitting layer commonly used in the prior art, or a copolymer of 3 ⁇ 4-inch benzene, polyfluorene, poly SPIR0 "p-benzene, ladderfPP, and phenylene acetylene substituted with a light-emitting group.
- the copolymers synthesized by the present invention can achieve excellent electron injection to red, green and blue light emitting materials regardless of any band gap width.
- the electrons are not affected by the work function of the yin face, even if it is a ⁇ stable metal with a work function up to 5.2eV
- a light-emitting device with high quantum efficiency and long-term stability can be obtained similarly to the low-work-function injection electrode, which is suitable for high-flat displays.
- This kind of materials with polar groups can be dissolved in water or methanol. Since the light emitting materials are generally insoluble, no mixing phenomenon will occur between the electron injection layer and the light emitting layer when constructing a multilayer device.
- High work function metals have excellent air 3 ⁇ 4 ⁇ vapor stability.
- the composite electrode composed of the polymer and the high work function metal of the present invention has stable processing performance in the atmosphere, and the stability of the device itself is greatly improved. Huge potential area in organic and high-quality display technology
- Figure 1 is a schematic diagram of the structure of an existing organic conjugated polymer light emitting diode
- FIG. 2 is an energy band diagram of a device using aluminum as a cathode
- FIG. 3 is a schematic structural diagram of a light emitting diode with an iy height of the present invention
- Figure 4 compares the presence or absence of a P1 layer when poly [2-methoxy (5- (2, monoethyl) -B3 ⁇ 4 «-l, 4-phenylacetylene)] (MEH-PPV) material is used as a cathode Curve of luminous brightness and external quantum efficiency of the device;
- Fig. 5 is a graph comparing the luminous brightness and the external quantum efficiency curve of a device emitting green light benzene S3 ⁇ 4-generation poly-p-phenylacetylene (P-PPV) and a device with or without a PI layer when gold is used as a cathode;
- P-PPV green light benzene S3 ⁇ 4-generation poly-p-phenylacetylene
- FIG. 6 is a graph comparing the luminous brightness and the luminous external quantum efficiency of a device with or without a PI layer when using gold as a cathode for a blue-emitting Poly Wat Pro;
- Fig. 7 is a graph showing the luminous brightness and the external light emitting quantum efficiency of the device with or without the P1 layer when the red-emitting ffl-PPV uses aluminum as a cathode in Fig. 7;
- 2,7-Dibromofluorene was prepared according to the method disclosed in the 1997 world patent WO 99 05184 and disclosed in "Chem. Mater” 11 (1997) 11083.
- Example 2 Preparation of 2,7-dibromo "9, 9 ⁇ di-substituted hydride replacement sheet (Article 26 of the detailed rules) Take the preparation of 2,7-dibromo ", ⁇ dizhenzahuhu as an example. According to the method disclosed in the 1997 world patent TO 99 05184 and the" Chem Mater "11 (1997) 11083, the process 2 , 7-dibromo ⁇ 9, 9 ⁇ di-n-octyl hydrazone.
- the 2,7-dibromo-9,9 "di-substituted substituents include, but are not limited to, n-hexyl, n-octyl, 2-ethyl beta, decyl, and the like.
- Example 3 Preparation of 3, 6 "" dibromocarbazole
- Dibromo-N-substituted yttriazoles include: n-hexyl, n-octyl, 2-ethylhexyl, etc., but is not limited thereto.
- Example 5 Preparation of 9, 9 ⁇ disubstituted-2,7-diborate hydrazone
- the substituents in 9, 9 ⁇ disubstituted -2, 7-diborate hydrazone include: n-hexyl, n-hexyl, 2-ethylhexyl, decyl, but not limited thereto.
- Substitution-3, Substitution in carbazole 3 ⁇ 4 ⁇ include: but not limited to n-hexyl, n-octyl, 2-ethylhexyl and the like.
- Example 7 Preparation of dibromo group at side 9 with amine-containing functional group side chain
- Substituents in 2,7-dibromo ⁇ , 9 "di-B3 ⁇ 4" substitutions include: ⁇ , ⁇ dimethylaminopropyl, ⁇ , ⁇ -dimethylaminoethyl, ⁇ , "dimethylaminohexyl, N ⁇ ethylaminoethyl and the like are not limited thereto.
- Example 8 Preparation of dibromo group at the 9-position with a sulfonic acid group-containing functional side chain
- the substituents in 2,7-dibromo ⁇ 9, 9 ⁇ disulfonium include: sulfopropyl, potassium sulfopropyl, sulfobutyl, potassium sulfonate and the like, but are not limited thereto.
- the pendant substituents of the dibromocarbazole containing a sulfonic acid functional group side chain include: sulfopropyl, potassium sulfopropyl, sodium sulfonate butyl, potassium sulfonate, but are not limited thereto.
- Example 11 Preparation of p-dibromobenzene with a side chain containing an amine-containing functional group
- Substitute page (rule 26) Take the preparation of 2,5-bis (3- [N, ⁇ diethylamino] -1-oxopropyl-1,4-dibromobenzene as an example. Press "Macromolecules" 30 (1997 ) The method disclosed in 7686 is used to prepare 2, 5-bis (3- [N, diethyl 3 ⁇ 43 ⁇ 4] -1-oxopropane S ⁇ l, 4-dibromobenzene.
- the side chain with amine group in p-dibromobenzene with side chain containing amine functional group includes N, dimethylaminopropyl, ⁇ , ⁇ -dimethylaminoethyl, ⁇ , N-dimethylaminohexyl, N, ⁇ diethylaminoethyl, and the like, but are not limited thereto.
- Example 12 Preparation of 4, 7-dibromo-2,1,3-benzoselenediazole according to the method and method disclosed in J. Chem. Soc. (1963) 4767. 7-dibromo-2,1,3-benzoselenediazole. Weigh 2,1,3-benzoselenediazole (1.83 g, 0.01 mole) and silver sulfate (3.12 g, 0.01 mole), dissolve in 20 ml of concentrated sulfuric acid, stir, and add bromine (3.2 g, 0.02 mole) dropwise.
- ITO conductive glass square resistance ⁇ 20 ⁇ / port, pre-cut into 15 mm X 15 mm square pieces.
- IT0 nets were bombarded with plasma in an oxygen plasma etcher for 10 minutes.
- PVK, PED0T: PSSPVK were purchased from Aldrich, and the solution was prepared with tetrachloroethane.
- PED0T PSS water dispersion (about 1%) was purchased from Bayer's buffer layer and spin-coated with a homogenizer (KW-4A). The thickness was determined by the solution concentration and speed.
- a surface profiler Tritek Alpha-Tencor500 was used. ) Measured monitoring. After film formation, the solvent residue and hard film were driven out in a constant temperature vacuum oven.
- the fluorescent conjugated polymer was weighed in a clean bottle, it was transferred to a nitrogen-resistant film-forming glove box (VAC company), dissolved in toluene, and filtered through a 0.45 micron filter membrane.
- the optimal thickness of the polymer light-emitting layer is 70 to 90 nm.
- the film thickness was measured with a TENCORALFA-STEP-500 surface profiler.
- P1 was dissolved in methanol (a small amount of acetic acid was added) to prepare a 0.04% 0. two concentration solution. Profit
- a 90-nm-thick poly [2-methoxy (5- (2, monoethyl) -hexadecane-1,4-phenyleneacetylene]] (MEtt-PPV) conjugated polymer film was used as the light-emitting layer.
- A1 Function of A1 (44 electron volts), Au (5.3 electron volts), alternating at different concentrations (2, 5-bis (3- [N, F "diethylamino] 1-oxypropyl 3 ⁇ 4 ⁇ 1, 4 —Benzene—co- ⁇
- a thin layer of P1 is spin-coated under a methanol solution of 9 "di-copolymer (P1) in a light-emitting layer; ⁇ as an electron injection layer, vacuum-evaporated over the electron injection layer P1 covered with aluminum
- a double-layered structure of gold or gold is used as a cathode to produce a polymer light emitting diode emitting orange-red light.
- a low work function Ba (2.7 electron volts) / A1 and a high work function are used.
- the conventional light-emitting device prepared by directly vapor-depositing Al (4.2 electron volts) and Au (5.3 electron volts) on 3 ⁇ 4 MEHPPV was used as a reference device, and the measurement results are shown in Table 1.
- the comparative poly [2— Methoxy (5- (2, monoethyl) -hexyloxy-1,4-phenylethyl block)] (MEH-PPV) material, with or without P1 layer when using aluminum as cathode The device's luminous effect shines outside quantum efficiency.
- MEHPPV Pl (0.0%) aluminum 7.0 24.7 2247 229
- Table 2 is based on the 3 ⁇ 43 ⁇ 43 ⁇ 43 ⁇ 4 performance of the device using PI as the electronic layer for the material P "PPV, and the device structure is ITO ⁇ EDOT / ADS129 / Al (Au) m electron 3 ⁇ 4 ⁇ cathode mt. External quantum efficiency fiber (Amp. Square meter) eo )
- Example 2 to replace the polymer light-emitting layer with; 3 ⁇ 4 light Pho material PFO, spin-coated a 40nm PW layer on the layer, to improve the injection of holes, the others remain unchanged.
- the experimental results are summarized in Table 3.
- the light-emitting poly PF0 uses the gold as the cathode and the light emission of the device with or without the P1 layer 3 ⁇ 4 3 ⁇ 4 3 ⁇ 4 Quantum efficiency.
- Table 3 shows the electrical properties of the device using PP1 as the electron 3 ⁇ 4 ⁇ layer.
- the device structure is ITO PEDOT P ADS ⁇ g / Pl / Al (Au)
- Example 2 was repeated.
- the electron injection layer was replaced with a polymer (P2) having a sulfo 3 ⁇ 4 group functional group in the side chain, and the others were unchanged.
- P2 polymer having a sulfo 3 ⁇ 4 group functional group in the side chain
- Table 4 The experimental results are summarized in Table 4.
- Figure 7 when the red-emitting MEH-PPV uses aluminum as the cathode, the light emission brightness and external light emission quantum efficiency of the device with or without the P1 layer are compared.
- Example 2 was repeated.
- the electron injection layer was replaced with a three-component copolymer containing a narrow band gap (narrow band gap monomer benzothiadi (P3) as the electron injection layer.
- the other cakes were unchanged.
- the experimental results are summarized in Table 5.
- Table 5 Based on the red light material poly [2-methoxy (5- (2, monoethyl) -hexyloxy-1, 4-phenylphenylacetylene)] (Mffi-PPV), with a narrow band gap monomer benzothia
- the ternary copolymer of a diazole e.g., the electroluminescence properties of a device as an electric layer
- the device structure is ITO / PEDOT / MEHPPV / P3 / A1 m electrons, cathode voltage, current, and efficiency.
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- Materials Engineering (AREA)
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Abstract
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006113184A1 (fr) * | 2005-04-15 | 2006-10-26 | General Electric Company | Electrodes modifiees a l'aide de materiaux organiques fonctionnels et dispositifs electroniques fabriques a partir de celles-ci |
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US9306170B2 (en) | 2011-03-28 | 2016-04-05 | Sumitomo Chemical Company, Limited | Electronic device and polymer compound |
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EP2597696A4 (fr) * | 2010-07-21 | 2018-01-10 | Sumitomo Chemical Company Limited | Elément électroluminescent organique |
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JP5552433B2 (ja) * | 2008-01-24 | 2014-07-16 | エスアールアイ インターナショナル | 高効率エレクトロルミネセント素子およびそれを生産するための方法 |
WO2009110642A1 (fr) | 2008-03-07 | 2009-09-11 | 住友化学株式会社 | Structure en couches |
US9295133B2 (en) * | 2008-07-17 | 2016-03-22 | The Regents Of The University Of California | Solution processable material for electronic and electro-optic applications |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2006113184A1 (fr) * | 2005-04-15 | 2006-10-26 | General Electric Company | Electrodes modifiees a l'aide de materiaux organiques fonctionnels et dispositifs electroniques fabriques a partir de celles-ci |
US8741442B2 (en) | 2005-04-15 | 2014-06-03 | General Electric Company | Modified electrodes using functional organic materials and electronic devices therefrom |
US9455408B2 (en) | 2009-09-30 | 2016-09-27 | Sumitomo Chemical Company, Limited | Layered structure, polymer, electroluminescent device, and photoelectric conversion device |
EP2597696A4 (fr) * | 2010-07-21 | 2018-01-10 | Sumitomo Chemical Company Limited | Elément électroluminescent organique |
US9306170B2 (en) | 2011-03-28 | 2016-04-05 | Sumitomo Chemical Company, Limited | Electronic device and polymer compound |
US9306169B2 (en) | 2011-03-28 | 2016-04-05 | Sumitomo Chemical Company, Limited | Electronic device, polymer compound, organic compound, and method of producing polymer compound |
US9601696B2 (en) | 2011-03-28 | 2017-03-21 | Sumitomo Chemical Company, Limited | Electroluminescent composition and electric device with high brightness |
WO2013167224A1 (fr) | 2012-05-10 | 2013-11-14 | Merck Patent Gmbh | Formulation comprenant des composés organiques ioniques pour utilisation dans des couches de transport d'électrons |
CN106876611A (zh) * | 2016-12-22 | 2017-06-20 | 成都新柯力化工科技有限公司 | 一种用于oled显示的复合蓝光材料的制备方法及应用 |
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