WO2005056295A1 - アクチュエータ装置の製造方法及び液体噴射装置 - Google Patents
アクチュエータ装置の製造方法及び液体噴射装置 Download PDFInfo
- Publication number
- WO2005056295A1 WO2005056295A1 PCT/JP2004/018378 JP2004018378W WO2005056295A1 WO 2005056295 A1 WO2005056295 A1 WO 2005056295A1 JP 2004018378 W JP2004018378 W JP 2004018378W WO 2005056295 A1 WO2005056295 A1 WO 2005056295A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- insulator film
- manufacturing
- layer
- forming
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 239000007788 liquid Substances 0.000 title claims abstract description 24
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 40
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 15
- 230000001590 oxidative effect Effects 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 239000012212 insulator Substances 0.000 claims description 139
- 239000000758 substrate Substances 0.000 claims description 80
- 238000010438 heat treatment Methods 0.000 claims description 39
- 238000000137 annealing Methods 0.000 claims description 26
- 238000007254 oxidation reaction Methods 0.000 claims description 25
- 230000003647 oxidation Effects 0.000 claims description 24
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 230000000630 rising effect Effects 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 38
- 238000009792 diffusion process Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- VDNSHGNZYOIMOW-UHFFFAOYSA-N oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Zr+4] VDNSHGNZYOIMOW-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14241—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm having a cover around the piezoelectric thin film element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14419—Manifold
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49346—Rocket or jet device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49401—Fluid pattern dispersing device making, e.g., ink jet
Definitions
- the present invention relates to an actuator device in which a part of a pressure generating chamber is constituted by a diaphragm, a piezoelectric element having a piezoelectric layer is formed on the diaphragm, and the diaphragm is deformed by displacement of the piezoelectric element. And a liquid ejecting apparatus for ejecting liquid droplets using an actuator device.
- An actuator device having a piezoelectric element that is displaced by applying a voltage is used, for example, as a liquid ejection unit of a liquid ejection head mounted on a liquid ejection device that ejects droplets.
- a liquid ejecting apparatus for example, a part of a pressure generating chamber communicating with a nozzle opening is formed of a diaphragm, and the diaphragm is deformed by a piezoelectric element to pressurize ink in the pressure generating chamber.
- a material of a piezoelectric material layer constituting such a piezoelectric element for example, lead zirconate titanate (PZT) is used.
- PZT lead zirconate titanate
- the lead component of the piezoelectric material layer is provided on the surface of the flow path forming substrate made of silicon (Si), and silicon oxide (SiO 2) constituting the diaphragm is formed. Will diffuse into the film. The diffusion of this lead component causes acid
- a diaphragm is formed on an silicon oxide silicon film.
- a zirconium oxide film having a predetermined thickness is provided, and a piezoelectric material layer is provided on the zirconium oxide film, whereby the diffusion of a lead component from the piezoelectric material layer to the silicon oxide film is prevented.
- the zirconium oxide film is formed, for example, by forming a zirconium film by a sputtering method and then thermally oxidizing the zirconium film. For this reason, there is a problem that defects such as cracks are generated in the oxidized zirconium film due to stress generated when the zirconium film is thermally oxidized. In addition, if the stress between the flow channel forming substrate and the zirconium oxide film is large, the zirconium film is deformed by deforming the flow channel forming substrate, for example, after forming a pressure generating chamber in the flow channel forming substrate. Problems such as peeling may also occur.
- Patent Document 1 Japanese Patent Application Laid-Open No. H11 204849 (FIGS. 1, 2 and 5)
- a first aspect of the present invention for solving the above problems is a step of forming a vibrating plate on one surface of a substrate, and forming a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode on the vibrating plate.
- a method for manufacturing an actuator device is a step of forming a vibrating plate on one surface of a substrate, and forming a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode on the vibrating plate.
- the adhesion of the insulator film can be improved, and peeling of the insulator film can be prevented.
- a second aspect of the present invention is the method for manufacturing an actuator apparatus according to the first aspect, wherein the heating temperature of the thermal oxidation furnace is set to 850 ° C. or more and 1000 ° C. or less.
- the substrate in the first or second aspect, is inserted into a thermal oxidation furnace.
- the stress of the insulator film can be more reliably suppressed and the density of the insulator film increases.
- a fourth aspect of the present invention is the actuator device according to the third aspect, wherein in the insulator film forming step, the density of the insulator film is set to 5.OgZcm 3 or more. Manufacturing method.
- the insulator film is a dense film, the diffusion of the lead (Pb) component of the piezoelectric layer into the elastic film can be effectively suppressed.
- the thickness of the insulator film is set to 40 nm or more.
- a sixth aspect of the present invention includes a step of forming a vibration plate on one surface of a substrate, and a step of forming a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate.
- the step of forming the vibration plate includes forming a zirconium layer on one side of the substrate, heating the zirconium layer to a predetermined temperature at a predetermined rate, and subjecting the zirconium layer to thermal oxidation. Forming an insulator film made of a zirconium layer, and adjusting the stress of the insulator film by annealing the insulator film at a temperature equal to or lower than the maximum temperature at which the zirconium layer is thermally oxidized. And a method for manufacturing an actuator device.
- the adhesion of the insulator film forming the diaphragm is improved.
- a seventh aspect of the present invention is the method for manufacturing an actuator apparatus according to the sixth aspect, wherein the rate of temperature rise when the zirconium layer is thermally oxidized is 5 ° CZsec or more. I will. [0020]
- the adhesion of the insulator film can be further improved. Further, since the density of the insulator film is increased, the diffusion of the lead (Pb) component of the piezoelectric layer into the elastic film can be suppressed.
- An eighth aspect of the present invention is the method for manufacturing an actuator apparatus according to the seventh aspect, wherein the rate of temperature rise when the zirconium layer is thermally oxidized is set to 50 ° CZsec or more. It is in.
- the insulator film becomes a more dense film, and the adhesion of the insulator film is reliably improved.
- a ninth aspect of the present invention is the method according to the eighth aspect, wherein the zirconium layer is heated by RTA when the zirconium layer is thermally oxidized. is there.
- the zirconium layer can be heated at a desired heating rate.
- the density of the insulator film is set to 5.OgZcm 3 or more.
- the feature lies in a method of manufacturing an actuator device.
- the insulator film is a dense film, the diffusion of the lead (Pb) component of the piezoelectric layer into the elastic film can be effectively suppressed.
- An eleventh aspect of the present invention is the actuator according to the tenth aspect, wherein in the step of forming the insulator film, the thickness of the insulator film is 40 nm or more. It is in the manufacturing method of the master device.
- the diffusion of the lead (Pb) component of the piezoelectric layer into the elastic film can be reliably prevented.
- a twelfth aspect of the present invention is characterized in that, in any one of the sixth to eleventh aspects, the temperature at which the zirconium layer is thermally oxidized is set to 800 ° C or more and 1000 ° C or less. In the manufacturing method of the actuator device.
- the zirconium layer can be favorably thermally oxidized, and the adhesion of the insulator film can be more reliably improved.
- a thirteenth aspect of the present invention is the manufacturing method of the actuator apparatus according to the twelfth aspect, wherein the temperature at which the insulator film is annealed is set to 800 ° C to 900 ° C. In the manufacturing method.
- the stress of the insulator film can be adjusted without lowering the adhesion.
- a fourteenth aspect of the present invention is the actuator device according to the thirteenth aspect, characterized in that the annealing time of the insulator film is adjusted within a range from 0.5 hours to 2 hours. In the manufacturing method.
- the stress of the insulator film can be surely adjusted without lowering the adhesion.
- a fifteenth aspect of the present invention is the method according to any one of the first to fourteenth aspects, wherein a process force for forming the vibration plate, silicon oxide (SiO 2)
- the method for manufacturing an actuator device includes a step of forming two elastic films, wherein the insulating film is formed on the elastic film.
- the adhesion is improved even if the film below the insulator film is an elastic film having silicon oxide force.
- a sixteenth aspect of the present invention is the liquid crystal display device according to any one of the eleventh to fifteenth aspects, wherein the step of forming the piezoelectric element includes the step of forming a piezoelectric body made of lead zirconate titanate (PZT) on the diaphragm.
- PZT lead zirconate titanate
- diffusion of the lead component of the piezoelectric layer into the diaphragm can be prevented, and the diaphragm and the piezoelectric element can be favorably formed.
- a seventeenth aspect of the present invention is directed to a liquid ejecting apparatus comprising: a liquid ejecting head using the actuator device manufactured by the manufacturing method according to any one of the eleventh to 16th aspects as liquid ejecting means. In the device.
- the liquid ejecting apparatus can improve the durability of the diaphragm, improve the displacement of the diaphragm due to the driving of the piezoelectric element, and improve the droplet discharge characteristics. Can be realized.
- FIG. 1 is an exploded perspective view of a recording head according to Embodiment 1.
- FIG. 2 is a plan view and a cross-sectional view of the recording head according to Embodiment 1.
- FIG. 3 is a cross-sectional view showing a process of manufacturing the recording head according to Embodiment 1.
- FIG. 4 is a cross-sectional view showing a process for manufacturing the recording head according to Embodiment 1.
- FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1.
- FIG. 6 is a schematic view of a diffusion furnace used in a manufacturing process.
- FIG. 7 is a graph showing the relationship between boat load speed and adhesion.
- FIG. 8 is a graph showing the relationship between thermal oxidation temperature and stress.
- FIG. 9 is a graph showing the relationship between boat load speed and stress.
- FIG. 10 is a schematic diagram of a recording apparatus according to an embodiment of the present invention.
- FIG. 11 is a diagram illustrating a measurement position of an adhesion force.
- FIG. 12 is a graph showing a relationship between a heating rate and an adhesive force.
- FIG. 13 is an SEM image showing a cross section of an insulator film.
- FIG. 14 is a graph showing the relationship between the time lapse of annealing treatment and the stress of an insulator film.
- FIG. 15 is a graph showing a variation in adhesion of an insulator film according to a comparative example.
- FIG. 16 is a graph showing a variation in adhesion of an insulator film according to an example.
- FIG. 1 is an exploded perspective view showing an ink jet recording head according to Embodiment 1 of the present invention
- FIG. 2 is a plan view and a sectional view of FIG.
- the flow path forming substrate 10 also has a silicon single crystal substrate force of plane orientation (110) in this embodiment, and has a silicon oxide crystal force previously formed by thermal oxidation on one surface thereof.
- a plurality of pressure generating chambers 12 are provided in parallel in the width direction.
- a communication portion 13 is formed in a region outside the pressure generating chamber 12 in the longitudinal direction of the flow path forming substrate 10, and the communication portion 13 and each pressure generating chamber 12 are provided for each pressure generating chamber 12. They are communicated via an ink supply path 14.
- the communication section 13 communicates with a reservoir section of the protective substrate, which will be described later, and forms a reservoir section serving as a common ink chamber for each of the pressure generating chambers 12.
- the ink supply path 14 is formed to have a width smaller than that of the pressure generation chamber 12, and keeps a constant flow resistance of the ink flowing into the pressure generation chamber 12 from the communication portion 13.
- a nozzle plate 20 having a nozzle opening 21 formed in the vicinity of an end of each pressure generating chamber 12 opposite to the ink supply path 14 is formed. It is fixed via an adhesive or a heat welding film.
- the nozzle plate 20 has a thickness of, for example, at 0. 01- lmm, linear expansion coefficient of less 300 ° C, for example, 2. 5-4. 5 [X 10- 6 Z ° C] Glass ceramics are , Silicon single crystal substrate or stainless steel.
- the elasticity made of silicon dioxide (SiO 2) having a thickness of, for example, about 1. O / zm is provided.
- a film 50 is formed,
- the insulating film 50 is made of zirconium oxide (ZrO) having a thickness of, for example, about 0.4 m
- a body film 55 is formed. Further, on this insulator film 55, for example, a lower electrode film 60 having a thickness of about 0.2 ⁇ m, a piezoelectric layer 70 having a thickness of about 1.0 m, for example,
- the piezoelectric element 300 is formed by laminating the upper electrode film 80 with a force of about 0.05 ⁇ m by a process described later.
- the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80.
- one of the electrodes of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each of the pressure generating chambers 12.
- a portion which is constituted by one of the patterned electrodes and the piezoelectric layer 70 and in which a piezoelectric strain is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion.
- the lower electrode film 60 is used as a common electrode of the piezoelectric element 300
- the upper electrode film 80 is used as an individual electrode of the piezoelectric element 300;
- the piezoelectric active portion is formed for each pressure generating chamber.
- the piezoelectric element 300 and a vibration plate whose displacement is generated by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator.
- each such piezoelectric element 3 For example, a lead electrode 90 having a force such as gold (Au) is connected to the upper electrode film 80, and a voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90. I'm wearing
- a protection substrate having a piezoelectric element holding portion 31 on a surface of the flow path forming substrate 10 on the side of the piezoelectric element 300 that can secure a space in a region facing the piezoelectric element 300 so as not to hinder its movement. 30 are joined. Since the piezoelectric element 300 is formed in the piezoelectric element holding portion 31, it is protected in a state where it is hardly affected by an external environment. Further, the protection board 30 is provided with a reservoir section 32 in a region corresponding to the communication section 13 of the flow path forming board 10.
- the reservoir portion 32 is provided along the direction in which the pressure generating chambers 12 are arranged so as to penetrate the protection substrate 30 in the thickness direction, and as described above, the communication portion of the flow path forming substrate 10.
- the reservoir 100 communicates with the pressure generating chamber 13 and serves as a common ink chamber for each of the pressure generating chambers 12.
- a through-hole 33 that penetrates the protection substrate 30 in the thickness direction is provided. A part of the electrode film 60 and the tip of the lead electrode 90 are exposed, and the lower electrode film 60 and the lead electrode 90 are connected to one end of a connection wiring extending from the drive IC (not shown). Is done.
- the material of the protection substrate 30 includes, for example, glass, ceramics material, metal, resin, and the like, and the protection substrate 30 is formed of a material having substantially the same thermal expansion coefficient as that of the flow path forming substrate 10.
- a silicon single crystal substrate made of the same material as the flow path forming substrate 10 is used.
- a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded.
- the sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 ⁇ m).
- PPS polyphenylene sulfide
- the fixing plate 42 is formed of a hard material such as a metal (for example, stainless steel (SUS) having a thickness of 30 m). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with the flexible sealing film 41.
- ink is taken in from an external ink supply unit (not shown), and the interior from the reservoir 100 to the nozzle opening 21 is filled with ink.
- a voltage is applied between the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generating chamber 12, and the elastic film 50, the insulator film 55, the lower electrode film 60, and the piezoelectric layer are applied.
- the pressure in each pressure generating chamber 12 increases, and ink droplets are ejected from the nozzle opening 21.
- FIGS. 3 to 5 are cross-sectional views of the pressure generating chamber 12 in the longitudinal direction.
- a wafer 110 for a channel forming substrate which is a silicon wafer, is thermally oxidized in a diffusion furnace at about 1100 ° C., and a diacid forming an elastic film 50 on the surface thereof.
- the silicon film 51 is formed.
- a silicon wafer having a relatively large thickness of about 625 m and high rigidity is used as the flow channel forming substrate wafer 110.
- an insulating film 55 made of zirconium oxide-zirconium is formed on the elastic film 50 (the silicon dioxide film 51). Specifically, a zirconium layer having a predetermined thickness, for example, about 300 nm in the present embodiment, is formed on the elastic film 50 by, for example, a DC snutter method. Then, the channel forming substrate wafer 110 on which the zirconium layer is formed is inserted into a heat diffusion furnace heated to 700 ° C. or higher at a speed of 200 mmZmin or more, and the zirconium layer is thermally oxidized to thereby form an oxide layer. An insulator film 55 which also has a zirconium force is formed.
- the diffusion furnace 200 used for thermal oxidation of the zirconium layer is, for example, as shown in FIG. 6, a furnace tube having a furnace port 201 at one end and a reaction gas inlet 202 at the other end.
- the furnace 203 includes a heater 203 disposed outside the furnace tube 203, and the furnace 201 can be opened and closed by a shirt 205.
- a plurality of flow path forming substrate wafers 110 on which a zirconium layer is formed are fixed to a boat 206 as a fixing jig, and the boat 206 is rotated at a speed of 200 mmZmin or more by about 900 °.
- the zirconium layer was inserted into the diffusion furnace 200 heated to C and the zirconium layer was thermally oxidized for about 1 hour with the shirt 205 closed to form an insulator film 55.
- the insertion speed of the boat 206 (hereinafter, boat loading speed) may be at least higher than 200 mmZmin, but is preferably 500 mmZmin or higher.
- the flow path forming group The rate of temperature rise of the zirconium layer when the plate wafer 110 is inserted into the diffusion furnace 200 is preferably at least 300 ° C.Zmin. For this reason, it is preferable that the boat load speed is appropriately adjusted according to the heating temperature of the diffusion furnace 200 so as to achieve such a heating rate.
- the channel forming substrate wafer 110 on which the zirconium layer is formed as described above is inserted into the diffusion furnace 200 heated to 700 ° C or more at a boat loading speed higher than 200 mmZmin and the zirconium layer is removed.
- the insulator film 55 can be formed into a dense film, and the occurrence of cracks in the insulator film 55 can be prevented.
- the adhesion of the insulator film 55 is improved, even if the insulator film 55 is repeatedly deformed by driving the piezoelectric element 300, peeling of the insulator film 55 can be prevented.
- the temperature of the diffusion furnace 200 was set to about 900 ° C., and the boat loading speed was changed to 20 mmZmin to 1500 mmZmin to form a zirconium oxide layer (insulator film).
- the layer was subjected to a scratch test to determine the adhesion.
- Figure 7 shows the results. As shown in Fig. 7, the adhesion of the zirconium oxide layer (insulator film) increases as the boatload speed increases. If the boatload speed is greater than 200 mmZmin, the adhesion is at least 150 mN. Power was gained. As is clear from these results, it is desirable that the boat loading speed be as high as possible in order to obtain the adhesion of the insulator film 55. However, if the boat loading speed is greater than 200 mmZmin, an insulating film having a sufficient adhesion can be obtained.
- the body film 55 can be formed.
- the heating temperature of diffusion furnace 200 is not particularly limited as long as it is 700 ° C or higher, but is preferably 850 ° C or higher and 1000 ° C or lower.
- the stress of the insulating film 55 becomes a weak tensile stress, specifically, about 10 OMPa-250 MPa, Since the balance with the stress of the insulating film 55 can be obtained, cracks due to the stress of the insulating film 55 and peeling of the insulating film 55 can be prevented.
- Figure 8 shows the results.
- the boat speed at this time was set at 500 mmZmin. Shown in Figure 8
- the thermal oxidation temperature was 900 ° C.
- the stress of the zirconium oxide layer was about ⁇ 200 MPa regardless of the sputtering temperature when forming the zirconium layer.
- the thermal oxidation temperature was about 800 ° C
- the stress of the zirconium oxide layer was about 1Z4 (about -50MPa) when the thermal oxidation temperature was 900 ° C.
- the stress of the oxidized zirconium layer is slightly affected by the sputtering temperature, but greatly varies depending on the thermal oxidation temperature. That is, the tensile stress tends to increase as the thermal oxidation temperature increases. If the thermal oxidation temperature (the temperature of the diffusion furnace) is set to about 850 ° C. or more and 1000 ° C. or less, the stress of the insulator film 55 becomes about 100 MPa—about 250 MPa.
- the insulator film 55 is dense and dense. It is possible to form a film having high adhesion. Further, the stress of the insulator film 55 is about 100 MPa—about 250 MPa, and the stress of the other films can be balanced. Therefore, the pressure generating chamber 12 is formed when the insulator film 55 is formed or in a process described later. In such a case, it is possible to prevent the insulator film 55 from cracking or the insulating film 55 from peeling off due to stress.
- the piezoelectric layer 70 which also has a lead zirconate titanate (PZT) force
- the upper electrode film 80 which also has an iridium force, for example, are formed on the flow path forming substrate wafer 110. Formed over the entire surface.
- PZT lead zirconate titanate
- a so-called sol in which a metal organic material is dissolved and dispersed in a catalyst is applied, dried and gelled, and then baked at a high temperature to obtain a piezoelectric layer 70 made of a metal oxide.
- a piezoelectric layer 70 made of lead zirconate phosphate (PZT) is formed. Further, when the piezoelectric layer 70 is formed in this manner, a force that may lead the lead component of the piezoelectric layer 70 to be diffused into the elastic film 50 at the time of firing also generates an oxidized zirconium force below the piezoelectric layer 70. Since the insulator film 55 is provided, it is possible to prevent the lead component of the piezoelectric layer 70 from diffusing into the elastic film 50.
- the material of the piezoelectric layer 70 is, for example, a relaxor obtained by adding a metal such as niobium, nickel, magnesium, bismuth or yttrium to a ferroelectric piezoelectric material such as lead zirconate titanate (PZT).
- a ferroelectric piezoelectric material such as lead zirconate titanate (PZT).
- a ferroelectric material or the like may be used.
- the composition may be appropriately selected in consideration of the characteristics, application, and the like of the piezoelectric element.For example, PbTiO (PT), PbZrO (PZ),
- a MOD (Metall Organic Decomposition) method or the like may be used.
- the piezoelectric element 300 is formed by patterning the piezoelectric layer 70 and the upper electrode film 80 in regions facing the respective pressure generating chambers 12.
- a lead electrode 90 is formed. Specifically, as shown in FIG. 4B, a metal layer 91 having a force such as gold (Au) is formed over the entire surface of the flow path forming substrate wafer 110. After that, for example, the lead electrode 90 is formed by patterning the metal layer 91 for each piezoelectric element 300 via a mask pattern (not shown) which also becomes a resist or the like.
- a protection substrate wafer 130 which is a silicon wafer and is to be a plurality of protection substrates 30, is bonded to the piezoelectric element 300 side of the flow path formation substrate wafer 110. Since the protective substrate wafer 130 has a thickness of, for example, about 400 m, the rigidity of the flow path forming substrate wafer 110 is significantly improved by joining the protective substrate wafer 130. To do this.
- the flow path forming substrate wafer 110 is polished to a certain thickness, and further wet-etched with hydrofluoric nitric acid to obtain the flow path forming substrate wafer 110.
- a predetermined thickness For example, in the present embodiment, the channel forming substrate wafer 110 is etched so as to be approximately thick.
- a mask film 52 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110, and is patterned into a predetermined shape. Then, the flow path forming substrate wafer 110 is anisotropically etched through the mask film 52, as shown in FIG. 13 and the ink supply path 14 are formed.
- the ink jet recording head of the present embodiment is obtained by dividing the flow channel forming substrate wafer 110 and the like into one chip size flow channel forming substrate 10 and the like as shown in FIG.
- the inkjet recording head manufactured by the above-described manufacturing method constitutes a part of a recording head unit having an ink flow path communicating with an ink cartridge or the like, and is mounted on an ink jet recording apparatus. Is done.
- FIG. 10 is a schematic diagram showing an example of the ink jet recording apparatus. As shown in FIG. 10, recording head units 1A and 1B having an ink jet recording head are provided with detachable cartridges 2A and 2B constituting ink supply means, and a carriage 3 on which the recording head units 1A and 1B are mounted. Is provided on a carriage shaft 5 attached to the apparatus main body 4 so as to be movable in the axial direction.
- the recording head units 1A and 1B discharge, for example, a black ink composition and a color ink composition, respectively. Then, the driving force of the driving motor 6 is transmitted to the carriage 3 via a plurality of gears and a timing belt 7 (not shown), so that the carriage 3 on which the recording head units 1A and 1B are mounted moves along the carriage shaft 5. Is done. on the other hand
- the apparatus main body 4 is provided with a platen 8 along a carriage shaft 5, and a recording sheet S, which is a recording medium such as paper supplied by a paper supply roller (not shown), is conveyed on the platen 8.
- a recording sheet S which is a recording medium such as paper supplied by a paper supply roller (not shown), is conveyed on the platen 8.
- the present embodiment is another example of a method of manufacturing an ink jet recording head, particularly, an actuator device. That is, also in the present embodiment, the inkjet recording head is manufactured in the same order as in the first embodiment (see FIGS. 3A to 5B), but the manufacturing method of the insulator film 55 is different. Hereinafter, a method for manufacturing the insulator film 55 according to the embodiment will be described.
- a zirconium layer having a thickness of about 300 nm is formed on the elastic film 50 by, for example, a DC sputtering method, similarly to the above-described embodiment.
- the insulator film 55 is formed by heating the wafer 110 for the flow path forming substrate on which the zirconium layer is formed to a predetermined temperature at a predetermined temperature rising rate by, for example, an RTA apparatus or the like.
- the rate of temperature rise when the zirconium layer is thermally oxidized is preferably 5 ° CZsec or more, and in particular, is desirably relatively fast as 50 ° CZsec or more. Further, it is preferable that the density of the insulator film 55, which also has an oxidized zirconium force, be 5 g / cm 3 by making the temperature rising rate relatively high.
- the method of heating the zirconium layer is not particularly limited, but it is preferable to use an RTA (Rapid Thermal Annealing) method as in this embodiment. Thus, the rate of temperature rise can be made relatively high.
- the temperature at which the zirconium layer is subjected to thermal oxidation is preferably 800 ° C. or more and 1000 ° C. or less.
- the insulator film 55 can be formed into a dense film, and cracks occur in the insulator film 55. Can be prevented. Specifically, by setting the density of the insulator film 55 to 5 g / cm 3 or more, it is possible to reliably prevent the occurrence of cracks in the insulator film 55. In addition, since the insulating film 55 is a dense film, the lead component of the piezoelectric layer 70 made of PZT is formed on the surface of the wafer 110 for the flow path forming substrate via the insulating film 55. ⁇ There is also an effect that diffusion to the conductive film can be prevented.
- an insulating film is formed by changing the temperature raising rate as shown in Table 1 below, and a lower electrode film is formed on the insulating film.
- a number of samples 115 were prepared, in which a piezoelectric layer made of PZT was directly formed without performing any process. Then, for these samples 115, the density of the insulating film and the diffusion depth of the Pb component of the piezoelectric layer into the elastic film (wafer for a flow path forming substrate) were examined. The results are shown in Table 1 below.
- the density of the insulator film becomes higher in proportion to the heating rate of the zirconium layer. Then, per the density of the insulating film exceeds 5GZcm 3, i.e., around the acid KaNoboru temperature rate exceeds approximately 5 ° CZsec, increase in density of the insulator film is stopped, faster more heating rate
- the temperature rising rate at the time of oxidizing the zirconium layer is 5 ° C / sec or more, preferably 50 ° C / sec.
- the density of the insulator film is 5 gZcm 3 or more, the diffusion of the Pb component into the elastic film (the flow path forming substrate nano) can be suppressed to a constant value.
- the thickness of the insulator film is 40 nm or more, it is possible to reliably prevent the Pb component from diffusing into the elastic film (wafer for a flow path forming substrate).
- the adhesion of the insulator film 55 to the elastic film 50 is improved. Piezoelectric element 3 Even if the insulator film 55 is repeatedly deformed by the driving of 00, peeling of the insulator film 55 can be prevented.
- the adhesion of the insulator film due to the difference in the rate of temperature rise was examined. Specifically, a zirconium layer formed on the elastic film was formed, conditions other than the heating rate were kept constant, and the heating rate was set to 15, 50, 100, and 150 ° CZsec, and the zirconium layer was thermally oxidized to obtain a sample 6. Nineteen insulator films (zirconium oxide layers) were formed. Then, a scratch test was performed on the insulating film of each of these samples. As shown in FIG.
- Figure 12 shows the results.
- Figure 12 As shown here, the insulating film of Sample 6 with a heating rate of 15 ° CZsec had an adhesion of about 100mN, but the insulating film of Sample 7 with a heating rate of 50 ° CZsec.
- Example 2 the adhesive strength of about 20 OmN was obtained, and the insulating films of Samples 8 and 9 in which the temperature raising rate was 100 ° C.Zsec or more showed extremely good adhesive strength of about 300 mN.
- the adhesion of the insulator film to the elastic film increases as the rate of temperature rise when the zirconium layer is thermally oxidized is increased.
- a sufficient adhesive force can be obtained by setting the temperature rising rate to 50 ° CZsec or more, particularly 100 ° CZsec or more.
- FIG. 13 shows a cross-sectional SEM image of the film 55.
- the heating rate was relatively slow, as in the case of the insulator films 55 of Samples 10 and 11, the interface between the insulator film 55 and the elastic film 50 is obtained. Then, a low-density layer composed of a glassy substance is formed. Note that the portion that looks black at the interface between the insulator film 55 and the elastic film 50 is the low-density layer.
- the insulator film 55 thus formed is further annealed at a predetermined temperature to adjust the stress of the insulator film 55.
- the insulating film 55 is annealed at a temperature not higher than the maximum temperature at which the zirconium layer is thermally oxidized as described above, and in this embodiment, at a temperature not higher than 900 ° C.
- the stress of the insulator film 55 is adjusted by changing the conditions such as the above.
- the stress of the insulator film 55 was adjusted by annealing the insulator film 55 under the conditions of a heating temperature of 850 ° C. and a heating time of lh. While stress of the insulating film 55 after the thermal oxidation 2. been made in the compressive stress of about 4 X 10 8, Aniru processed result, the stress of the insulating film 55 is 2. Tensile about 94 X 10 8 Stress It became.
- the stress of the entire film including each layer constituting the piezoelectric element can be balanced, so that the film caused by the stress is peeled off. And the occurrence of cracks can be prevented.
- the heating temperature at the time of annealing is set to be equal to or lower than the maximum temperature at which the zirconium layer is thermally oxidized, the adhesion of the insulator film 55 can be maintained.
- the heating temperature during the annealing treatment is not particularly limited as long as it is equal to or lower than the maximum temperature, but it is preferable to set the heating temperature as high as possible.
- the stress of the insulator film is determined by the conditions such as the heating temperature and the heating time during the annealing process. Therefore, by increasing the heating temperature, the adjustment of stress (anneal treatment) can be completed in a relatively short time, and the production efficiency can be improved.
- the change in the stress of the insulator film before and after the annealing treatment was examined.
- the insulator film is formed by thermally oxidizing the zirconium layer formed on the elastic film under the conditions of a heating temperature of 900 ° C and a heating time of 5 seconds. Thereafter, the insulator film was annealed at a heating temperature of 900 ° C. for a heating time of 60 min. Then, at the time of performing the annealing treatment, the amount of warpage of the insulator film was checked at predetermined time intervals.
- Fig. 14 shows the results.
- the amount of warpage referred to here is the center of the wafer for the flow path forming substrate at a span of about 140 mm. This is the amount of warpage of the insulator film.
- the maximum amount of warpage of the insulator film before annealing was about +30 m. That is, the insulator film before the annealing treatment was warped so that the elastic film side became concave. Although the amount of warpage of the insulator film greatly changed by about an annealing time of about 15 min, it continued to change gradually in the negative direction thereafter. After 60 minutes of the annealing treatment, the insulator film had a maximum amount of warpage of about 40 m and was warped so that the elastic film side became convex. As is clear from this result, the stress of the insulator film 55 changes depending on the annealing time.
- the insulator film 55 can be adjusted to a preferable stress state.
- the stress of the insulator film can also be adjusted by controlling the temperature, which is limited only by the annealing time.
- the stress adjustment of the insulator film by such annealing treatment is performed at the time of firing the piezoelectric layer. For example, by changing conditions such as the firing temperature of the piezoelectric layer 70, the stress of the insulator film can be adjusted. If the conditions such as the sintering temperature of the piezoelectric layer are changed while applying force, the physical properties of the formed piezoelectric layer change, and desired characteristics cannot be obtained, which is not preferable.
- Examples 1A, 1B, 1C A plurality of samples (Examples 1A, 1B, 1C) were prepared by annealing the body membrane. Then, in each of the samples of the examples and the comparative examples, a scratch test of the insulator film was performed. As described above, the scratch test was performed at three points on the channel forming substrate wafer 110 (see FIG. 11). The results are shown in FIGS.
- the present invention has been described above, but the present invention is not limited to the above-described embodiments.
- the insulator film 55 is formed on the elastic film 50.
- the insulator film 55 may be formed on the piezoelectric layer 70 side of the elastic film 50.
- another layer may be provided between the elastic film 50 and the insulator film 55.
- the present invention has been described by taking, as an example, a liquid ejecting head which is mounted on the liquid ejecting apparatus and includes an actuator device as liquid ejecting means, that is, an ink jet recording head.
- the present invention broadly covers the entire actuator apparatus, and can of course be applied to a liquid ejecting head that ejects liquid other than ink.
- liquid ejecting heads include, for example, various recording heads used in image recording devices such as printers, color material ejecting heads used in the production of color filters such as liquid crystal displays, organic EL displays, FEDs (surface emitting devices). Examples include an electrode material ejection head used for forming an electrode such as a display, and a biological organic matter ejection head used for manufacturing a biochip.
- the present invention can be applied to an actuator device mounted on any device other than the actuator device mounted on the liquid ejecting head.
- Other devices on which the actuator device is mounted include, for example, a sensor in addition to the liquid ejection head described above.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005516169A JPWO2005056295A1 (ja) | 2003-12-09 | 2004-12-09 | アクチュエータ装置の製造方法及び液体噴射装置 |
US10/582,112 US7562451B2 (en) | 2003-12-09 | 2004-12-09 | Method of manufacturing actuator device for ink jet head |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003410724 | 2003-12-09 | ||
JP2003-410724 | 2003-12-09 | ||
JP2004231463 | 2004-08-06 | ||
JP2004-231463 | 2004-08-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005056295A1 true WO2005056295A1 (ja) | 2005-06-23 |
Family
ID=34680617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/018378 WO2005056295A1 (ja) | 2003-12-09 | 2004-12-09 | アクチュエータ装置の製造方法及び液体噴射装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7562451B2 (ja) |
JP (1) | JPWO2005056295A1 (ja) |
KR (1) | KR20060096461A (ja) |
WO (1) | WO2005056295A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204549A (ja) * | 2011-03-24 | 2012-10-22 | Seiko Epson Corp | 圧電素子の製造方法、圧電素子、液体噴射ヘッド及び液体噴射装置 |
US9085146B2 (en) | 2012-10-24 | 2015-07-21 | Seiko Epson Corporation | Liquid ejecting head, liquid ejecting apparatus and piezoelectric element |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4858670B2 (ja) * | 2004-12-20 | 2012-01-18 | セイコーエプソン株式会社 | アクチュエータ装置の製造方法及び液体噴射装置 |
KR101153690B1 (ko) * | 2006-02-20 | 2012-06-18 | 삼성전기주식회사 | 잉크젯 헤드의 압전 액츄에이터 및 그 형성 방법 |
JP5669443B2 (ja) * | 2010-05-31 | 2015-02-12 | キヤノン株式会社 | 振動体とその製造方法及び振動波アクチュエータ |
JP2012059770A (ja) * | 2010-09-06 | 2012-03-22 | Seiko Epson Corp | 圧電素子、液滴噴射ヘッドおよび液滴噴射装置ならびにそれらの製造方法 |
JP6030927B2 (ja) * | 2012-11-15 | 2016-11-24 | ヤマハ発動機株式会社 | 基板作業システム、基板搬送装置および基板作業装置 |
JP6150038B2 (ja) * | 2013-03-13 | 2017-06-21 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波トランスデューサー及び超音波デバイス |
JPWO2016194964A1 (ja) * | 2015-06-04 | 2018-03-22 | 住友電気工業株式会社 | プリント配線板用原板及びプリント配線板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06297720A (ja) * | 1993-04-15 | 1994-10-25 | Seiko Epson Corp | インクジェット記録ヘッドの製造方法 |
JPH09254386A (ja) * | 1995-04-03 | 1997-09-30 | Seiko Epson Corp | インクジェット記録用プリンタヘッド及びその製造方法 |
JP2002064092A (ja) * | 2000-08-21 | 2002-02-28 | Yamaha Corp | 選択酸化法と半導体装置の製法 |
JP2002240297A (ja) * | 2001-02-14 | 2002-08-28 | Seiko Epson Corp | インクジェット式記録ヘッド及びその製造方法並びにインクジェット式記録装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0736385B1 (en) * | 1995-04-03 | 1998-02-25 | Seiko Epson Corporation | Printer head for ink jet recording and process for the preparation thereof |
JPH11204849A (ja) | 1998-01-20 | 1999-07-30 | Ricoh Co Ltd | 圧電アクチュエータ |
DE69936075T2 (de) * | 1998-01-22 | 2007-09-13 | Seiko Epson Corp. | Piezoelektrisches Schichtelement und Tintenstrahldruckkopf, der dieses benutzt |
KR100308131B1 (ko) * | 1999-10-01 | 2001-11-02 | 김영환 | 반도체 소자의 커패시터 제조 방법 |
DE60005111T2 (de) * | 1999-11-15 | 2004-03-25 | Seiko Epson Corp. | Tintenstrahldruckkopf und Tintenstrahlaufzeichnungsvorrichtung |
-
2004
- 2004-12-09 US US10/582,112 patent/US7562451B2/en active Active
- 2004-12-09 KR KR1020067012160A patent/KR20060096461A/ko not_active Application Discontinuation
- 2004-12-09 JP JP2005516169A patent/JPWO2005056295A1/ja not_active Withdrawn
- 2004-12-09 WO PCT/JP2004/018378 patent/WO2005056295A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06297720A (ja) * | 1993-04-15 | 1994-10-25 | Seiko Epson Corp | インクジェット記録ヘッドの製造方法 |
JPH09254386A (ja) * | 1995-04-03 | 1997-09-30 | Seiko Epson Corp | インクジェット記録用プリンタヘッド及びその製造方法 |
JP2002064092A (ja) * | 2000-08-21 | 2002-02-28 | Yamaha Corp | 選択酸化法と半導体装置の製法 |
JP2002240297A (ja) * | 2001-02-14 | 2002-08-28 | Seiko Epson Corp | インクジェット式記録ヘッド及びその製造方法並びにインクジェット式記録装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204549A (ja) * | 2011-03-24 | 2012-10-22 | Seiko Epson Corp | 圧電素子の製造方法、圧電素子、液体噴射ヘッド及び液体噴射装置 |
US9085146B2 (en) | 2012-10-24 | 2015-07-21 | Seiko Epson Corporation | Liquid ejecting head, liquid ejecting apparatus and piezoelectric element |
Also Published As
Publication number | Publication date |
---|---|
JPWO2005056295A1 (ja) | 2007-07-05 |
US7562451B2 (en) | 2009-07-21 |
US20070084033A1 (en) | 2007-04-19 |
KR20060096461A (ko) | 2006-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100731438B1 (ko) | 액츄에이터 장치의 제조 방법 및 액체 분사 장치 | |
EP1911590A1 (en) | Actuator device, liquid-jet head, and method of manufacturing actuator device | |
JP2007266274A (ja) | アクチュエータ装置の製造方法及びその製造方法によって形成されたアクチュエータ装置を備えた液体噴射ヘッド | |
JP2006245247A (ja) | 圧電素子及びその製造方法、液体噴射ヘッド及びその製造方法並びに液体噴射装置 | |
US20080034563A1 (en) | Manufacturing method of actuator device and liquid jet apparatus provided wirth actuator device formed by manufacturing method of the same | |
WO2005056295A1 (ja) | アクチュエータ装置の製造方法及び液体噴射装置 | |
JP2007073931A (ja) | アクチュエータ装置の製造方法及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 | |
JP2001260348A (ja) | インクジェット式記録ヘッド及びインクジェット式記録装置 | |
JP3603931B2 (ja) | インクジェット式記録ヘッド及びインクジェット式記録装置 | |
JP2000025225A (ja) | アクチュエータ装置及びインクジェット式記録ヘッド並びにインクジェット式記録装置 | |
JP2007048816A (ja) | アクチュエータ装置の製造方法及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 | |
KR100816169B1 (ko) | 액츄에이터 장치의 제조 방법 및 액츄에이터 장치 및 액체분사 헤드 및 액체 분사 장치 | |
JP5201304B2 (ja) | アクチュエータ装置の製造方法及び液体噴射ヘッドの製造方法 | |
JP2009226728A (ja) | 液体噴射ヘッドの製造方法及び圧電素子の製造方法 | |
JP2000006398A (ja) | インクジェット式記録ヘッド及びその製造方法並びにインクジェット式記録装置 | |
JP2007180249A (ja) | アクチュエータ装置の製造方法及び液体噴射装置 | |
JP2006245248A (ja) | 圧電素子及びその製造方法、液体噴射ヘッド及びその製造方法並びに液体噴射装置 | |
JP5157127B2 (ja) | アクチュエータ装置及びその製造方法、並びに液体噴射ヘッド及び液体噴射装置 | |
JP2005260003A (ja) | アクチュエータ装置の製造方法及び液体噴射装置 | |
JP3603933B2 (ja) | インクジェット式記録ヘッド及びインクジェット式記録装置 | |
JP2005294438A (ja) | 熱酸化方法及びこれによって得られた基板を備えた圧電アクチュエータ並びに液体噴射装置 | |
JP2006021392A (ja) | アクチュエータ装置及びその製造方法並びに液体噴射装置 | |
JP2000052554A (ja) | 素子構造及びインクジェット式記録ヘッド並びにインクジェット式記録装置 | |
JP2004195939A (ja) | 液体噴射ヘッドの製造方法 | |
JP4013029B2 (ja) | インクジェット式記録ヘッド及びインクジェット式記録装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480035810.5 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2005516169 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007084033 Country of ref document: US Ref document number: 10582112 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067012160 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067012160 Country of ref document: KR |
|
122 | Ep: pct application non-entry in european phase | ||
WWP | Wipo information: published in national office |
Ref document number: 10582112 Country of ref document: US |