WO2005036612A3 - Ferroelectric capacitor with a complex-oxide hard-mask top electrode and method for manufacturing the same - Google Patents

Ferroelectric capacitor with a complex-oxide hard-mask top electrode and method for manufacturing the same Download PDF

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Publication number
WO2005036612A3
WO2005036612A3 PCT/JP2004/014287 JP2004014287W WO2005036612A3 WO 2005036612 A3 WO2005036612 A3 WO 2005036612A3 JP 2004014287 W JP2004014287 W JP 2004014287W WO 2005036612 A3 WO2005036612 A3 WO 2005036612A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
complex
same
top electrode
ferroelectric capacitor
Prior art date
Application number
PCT/JP2004/014287
Other languages
French (fr)
Other versions
WO2005036612A2 (en
Inventor
Koji Yamakawa
Katsuaki Natori
Soichi Yamazaki
Osamu Arisumi
Hiroshi Itokawa
Hiroyuki Kanaya
Kazuhiro Tomioka
Keisuke Nakazawa
Yasuyuki Taniguchi
Ulrich Egger
Original Assignee
Toshiba Kk
Infineon Technologies Ag
Koji Yamakawa
Katsuaki Natori
Soichi Yamazaki
Osamu Arisumi
Hiroshi Itokawa
Hiroyuki Kanaya
Kazuhiro Tomioka
Keisuke Nakazawa
Yasuyuki Taniguchi
Ulrich Egger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk, Infineon Technologies Ag, Koji Yamakawa, Katsuaki Natori, Soichi Yamazaki, Osamu Arisumi, Hiroshi Itokawa, Hiroyuki Kanaya, Kazuhiro Tomioka, Keisuke Nakazawa, Yasuyuki Taniguchi, Ulrich Egger filed Critical Toshiba Kk
Publication of WO2005036612A2 publication Critical patent/WO2005036612A2/en
Publication of WO2005036612A3 publication Critical patent/WO2005036612A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer

Abstract

The present invention provides a method for manufacturing a semiconductor device equipped with a capacitor (3, 4, 5) in which a ferroelectric dielectric film (4) is used, wherein a complex oxide such as SrRuO3 is used as a mask material when the dielectric film is etched.
PCT/JP2004/014287 2003-09-26 2004-09-22 Ferroelectric capacitor with a complex-oxide hard-mask top electrode and method for manufacturing the same WO2005036612A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-336023 2003-09-26
JP2003336023A JP2005108876A (en) 2003-09-26 2003-09-26 Semiconductor device and its manufacturing process

Publications (2)

Publication Number Publication Date
WO2005036612A2 WO2005036612A2 (en) 2005-04-21
WO2005036612A3 true WO2005036612A3 (en) 2005-06-02

Family

ID=34430931

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/014287 WO2005036612A2 (en) 2003-09-26 2004-09-22 Ferroelectric capacitor with a complex-oxide hard-mask top electrode and method for manufacturing the same

Country Status (2)

Country Link
JP (1) JP2005108876A (en)
WO (1) WO2005036612A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4596167B2 (en) * 2006-02-24 2010-12-08 セイコーエプソン株式会社 Capacitor manufacturing method
JP4553143B2 (en) * 2006-02-24 2010-09-29 セイコーエプソン株式会社 Method for manufacturing piezoelectric actuator, ink jet recording head
JP2008078417A (en) * 2006-09-21 2008-04-03 Toshiba Corp Semiconductor memory device and manufacturing method thereof
JP5347381B2 (en) * 2008-08-28 2013-11-20 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
JP5549913B2 (en) * 2009-09-01 2014-07-16 株式会社リコー Method for manufacturing electromechanical transducer
JP2014054802A (en) * 2012-09-13 2014-03-27 Ricoh Co Ltd Electromechanical conversion element, droplet discharge head and droplet discharge device
JP6347084B2 (en) 2014-02-18 2018-06-27 アドバンストマテリアルテクノロジーズ株式会社 Ferroelectric ceramics and method for producing the same
EP4190947A4 (en) * 2020-07-28 2024-01-17 Fujifilm Corp Piezoelectric film-equipped substrate and piezoelectric element

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650362A (en) * 1993-11-04 1997-07-22 Fuji Xerox Co. Oriented conductive film and process for preparing the same
US5889299A (en) * 1996-02-22 1999-03-30 Kabushiki Kaisha Toshiba Thin film capacitor
EP1039525A1 (en) * 1997-11-10 2000-09-27 Hitachi, Ltd. Dielectric element and manufacturing method therefor
JP2001144266A (en) * 1999-11-11 2001-05-25 Hitachi Ltd Semiconductor integrated circuit device and manufacturing method therefor
US20020004249A1 (en) * 2000-06-30 2002-01-10 Takashi Kawakubo Semiconductor memory device and manufacturing method thereof
US6423592B1 (en) * 2001-06-26 2002-07-23 Ramtron International Corporation PZT layer as a temporary encapsulation and hard mask for a ferroelectric capacitor
US20020154532A1 (en) * 2001-03-21 2002-10-24 Hiromu Miyazawa Ferroelectric memory element and electronic apparatus
WO2003021656A2 (en) * 2001-08-31 2003-03-13 Infineon Technologies Ag Improved material for use with ferroelectrics
US20030058700A1 (en) * 2001-06-29 2003-03-27 Rainer Bruchhaus Method for fabricating a semiconductor memory device
US20030071294A1 (en) * 2001-02-28 2003-04-17 Shan Sun Process and structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits
US20030128570A1 (en) * 2001-10-31 2003-07-10 Masahiro Tanaka Digital to analog converter including a ferroelectric non-volatile semiconductor memory, and method for converting digital data to analog data
US6610549B1 (en) * 1999-03-05 2003-08-26 University Of Maryland, College Park Amorphous barrier layer in a ferroelectric memory cell

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650362A (en) * 1993-11-04 1997-07-22 Fuji Xerox Co. Oriented conductive film and process for preparing the same
US5889299A (en) * 1996-02-22 1999-03-30 Kabushiki Kaisha Toshiba Thin film capacitor
EP1039525A1 (en) * 1997-11-10 2000-09-27 Hitachi, Ltd. Dielectric element and manufacturing method therefor
US6610549B1 (en) * 1999-03-05 2003-08-26 University Of Maryland, College Park Amorphous barrier layer in a ferroelectric memory cell
JP2001144266A (en) * 1999-11-11 2001-05-25 Hitachi Ltd Semiconductor integrated circuit device and manufacturing method therefor
US6756262B1 (en) * 1999-11-11 2004-06-29 Hitachi, Ltd. Semiconductor integrated circuit device having spaced-apart electrodes and the method thereof
US20020004249A1 (en) * 2000-06-30 2002-01-10 Takashi Kawakubo Semiconductor memory device and manufacturing method thereof
US20030071294A1 (en) * 2001-02-28 2003-04-17 Shan Sun Process and structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits
US20020154532A1 (en) * 2001-03-21 2002-10-24 Hiromu Miyazawa Ferroelectric memory element and electronic apparatus
US6423592B1 (en) * 2001-06-26 2002-07-23 Ramtron International Corporation PZT layer as a temporary encapsulation and hard mask for a ferroelectric capacitor
US20030058700A1 (en) * 2001-06-29 2003-03-27 Rainer Bruchhaus Method for fabricating a semiconductor memory device
WO2003021656A2 (en) * 2001-08-31 2003-03-13 Infineon Technologies Ag Improved material for use with ferroelectrics
US20030128570A1 (en) * 2001-10-31 2003-07-10 Masahiro Tanaka Digital to analog converter including a ferroelectric non-volatile semiconductor memory, and method for converting digital data to analog data

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 22 9 March 2001 (2001-03-09) *

Also Published As

Publication number Publication date
WO2005036612A2 (en) 2005-04-21
JP2005108876A (en) 2005-04-21

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