WO2005022120A3 - Process for producing nanocrystals and nanocrystals produced thereby - Google Patents

Process for producing nanocrystals and nanocrystals produced thereby Download PDF

Info

Publication number
WO2005022120A3
WO2005022120A3 PCT/US2004/007138 US2004007138W WO2005022120A3 WO 2005022120 A3 WO2005022120 A3 WO 2005022120A3 US 2004007138 W US2004007138 W US 2004007138W WO 2005022120 A3 WO2005022120 A3 WO 2005022120A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanocrystals
temperature
precursor
mixture
producing
Prior art date
Application number
PCT/US2004/007138
Other languages
French (fr)
Other versions
WO2005022120A2 (en
Inventor
Erik C Scher
Mihai Buretea
Original Assignee
Nanosys Inc
Erik C Scher
Mihai Buretea
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanosys Inc, Erik C Scher, Mihai Buretea filed Critical Nanosys Inc
Priority to AU2004269297A priority Critical patent/AU2004269297A1/en
Priority to JP2006509242A priority patent/JP2006521278A/en
Priority to CA002518352A priority patent/CA2518352A1/en
Priority to EP04775831A priority patent/EP1601612A2/en
Publication of WO2005022120A2 publication Critical patent/WO2005022120A2/en
Publication of WO2005022120A3 publication Critical patent/WO2005022120A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Abstract

A process for producing nanocrystals and nanocrystals produced thereby . The process comprises contacting a metal precursor with a mixture, which includes a coordinating solvent and optionally a surfactant and metal catalyst, to form a first precursor mixture. The process also comprises heating the first precursor mixture to a first temperature and contacting the first precursor mixture with a second precursor mixture, which may be a Group V or Group VI precursor, to form a reaction mixture at a second temperature. The process further comprises heating the reaction mixture at a third temperature to grow nanocrystals, whereby the second temperature is no more than about 15°C lower than the first temperature. The figure is a flowchart depicting the nanocrystal production process.
PCT/US2004/007138 2003-03-11 2004-03-10 Process for producing nanocrystals and nanocrystals produced thereby WO2005022120A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2004269297A AU2004269297A1 (en) 2003-03-11 2004-03-10 Process for producing nanocrystals and nanocrystals produced thereby
JP2006509242A JP2006521278A (en) 2003-03-11 2004-03-10 Process for producing nanocrystals and nanocrystals produced thereby
CA002518352A CA2518352A1 (en) 2003-03-11 2004-03-10 Process for producing nanocrystals and nanocrystals produced thereby
EP04775831A EP1601612A2 (en) 2003-03-11 2004-03-10 Process for producing nanocrystals and nanocrystals produced thereby

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45319803P 2003-03-11 2003-03-11
US60/453,198 2003-03-11

Publications (2)

Publication Number Publication Date
WO2005022120A2 WO2005022120A2 (en) 2005-03-10
WO2005022120A3 true WO2005022120A3 (en) 2005-04-28

Family

ID=34272394

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/007138 WO2005022120A2 (en) 2003-03-11 2004-03-10 Process for producing nanocrystals and nanocrystals produced thereby

Country Status (5)

Country Link
EP (1) EP1601612A2 (en)
JP (1) JP2006521278A (en)
AU (1) AU2004269297A1 (en)
CA (1) CA2518352A1 (en)
WO (1) WO2005022120A2 (en)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US7943491B2 (en) 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
US8507390B2 (en) 2004-06-08 2013-08-13 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8558304B2 (en) 2004-06-08 2013-10-15 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8592037B2 (en) 2004-01-15 2013-11-26 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US8749130B2 (en) 2004-01-15 2014-06-10 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US8865489B2 (en) 2009-05-12 2014-10-21 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8905772B2 (en) 2008-03-05 2014-12-09 The Board Of Trustees Of The University Of Illinois Stretchable and foldable electronic devices
US8916064B2 (en) 2009-05-01 2014-12-23 Nanosys, Inc. Functionalized matrices for dispersion of nanostructures
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
US8946683B2 (en) 2008-06-16 2015-02-03 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
US9012784B2 (en) 2008-10-07 2015-04-21 Mc10, Inc. Extremely stretchable electronics
US9105555B2 (en) 2004-06-04 2015-08-11 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US9117940B2 (en) 2007-01-17 2015-08-25 The Board Of Trustees Of The University Of Illinois Optical systems fabricated by printing-based assembly
US9149836B2 (en) 2004-06-08 2015-10-06 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9289132B2 (en) 2008-10-07 2016-03-22 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US9324733B2 (en) 2004-06-04 2016-04-26 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US9450043B2 (en) 2004-06-04 2016-09-20 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US9554484B2 (en) 2012-03-30 2017-01-24 The Board Of Trustees Of The University Of Illinois Appendage mountable electronic devices conformable to surfaces

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
EP1738378A4 (en) 2004-03-18 2010-05-05 Nanosys Inc Nanofiber surface based capacitors
JP2008507114A (en) 2004-04-27 2008-03-06 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Composite patterning device for soft lithography
GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
TW201341440A (en) 2004-06-08 2013-10-16 Sandisk Corp Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
AU2005253604B2 (en) 2004-06-08 2011-09-08 Scandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7557028B1 (en) 2004-07-28 2009-07-07 Nanosys, Inc. Process for group III-V semiconductor nanostructure synthesis and compositions made using same
US7794600B1 (en) 2004-08-27 2010-09-14 Nanosys, Inc. Purification of nanocrystal solutions by chromatography
US8558311B2 (en) 2004-09-16 2013-10-15 Nanosys, Inc. Dielectrics using substantially longitudinally oriented insulated conductive wires
US7365395B2 (en) 2004-09-16 2008-04-29 Nanosys, Inc. Artificial dielectrics using nanostructures
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
CA2580589C (en) 2006-12-19 2016-08-09 Fio Corporation Microfluidic detection system
US20100110728A1 (en) 2007-03-19 2010-05-06 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
CA2682826C (en) 2007-04-02 2013-08-13 Fio Corporation System and method of deconvolving multiplexed fluorescence spectral signals generated by quantum dot optical coding technology
EP2162486A4 (en) 2007-06-22 2014-03-12 Fio Corp Systems and methods for manufacturing quantum dot-doped polymer microbeads
US8551786B2 (en) 2007-07-09 2013-10-08 Fio Corporation Systems and methods for enhancing fluorescent detection of target molecules in a test sample
EP2209549A4 (en) 2007-10-12 2014-03-05 Fio Corp Flow focusing method and system for forming concentrated volumes of microbeads, and microbeads formed further thereto
US8999851B2 (en) 2007-12-14 2015-04-07 Oned Material Llc Methods for formation of substrate elements
WO2009134367A1 (en) 2008-04-30 2009-11-05 Nanosys, Inc. Non-fouling surfaces for reflective spheres
EP2321810A4 (en) 2008-06-25 2014-09-17 Fio Corp Bio-threat alert system
BRPI0917839A2 (en) 2008-08-29 2015-11-24 Fio Corp single-use portable diagnostic test device, and associated system and method for testing environmental and biological test samples
US8540889B1 (en) 2008-11-19 2013-09-24 Nanosys, Inc. Methods of generating liquidphobic surfaces
KR101462658B1 (en) * 2008-12-19 2014-11-17 삼성전자 주식회사 Semiconductor Nanocrystal and Preparation Method thereof
US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
EP2387721A4 (en) 2009-01-13 2014-05-14 Fio Corp A handheld diagnostic test device and method for use with an electronic device and a test cartridge in a rapid diagnostic test
US8012448B2 (en) 2009-07-13 2011-09-06 University Of Southern California Synthesis of metal chalcogenide nanocrystals using organodichalcogenide reagents
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US10918298B2 (en) 2009-12-16 2021-02-16 The Board Of Trustees Of The University Of Illinois High-speed, high-resolution electrophysiology in-vivo using conformal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
WO2011100023A1 (en) 2010-02-10 2011-08-18 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
EP2547258B1 (en) 2010-03-17 2015-08-05 The Board of Trustees of the University of Illionis Implantable biomedical devices on bioresorbable substrates
EP2638321B1 (en) 2010-11-10 2019-05-08 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
WO2012099653A2 (en) 2010-12-08 2012-07-26 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
WO2013028253A1 (en) 2011-08-19 2013-02-28 Qd Vision, Inc. Semiconductor nanocrystals and methods
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
US20130112941A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Semiconductor structure having nanocrystalline core and nanocrystalline shell with insulator coating
CN104472023B (en) 2011-12-01 2018-03-27 伊利诺伊大学评议会 It is designed to undergo the transient state device of programmable transformation
WO2013173409A1 (en) 2012-05-15 2013-11-21 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (en) 2012-07-02 2017-08-21 奈米系統股份有限公司 Highly luminescent nanostructures and methods of producing same
US9425365B2 (en) 2012-08-20 2016-08-23 Pacific Light Technologies Corp. Lighting device having highly luminescent quantum dots
US8889457B2 (en) 2012-12-13 2014-11-18 Pacific Light Technologies Corp. Composition having dispersion of nano-particles therein and methods of fabricating same
CA2905890C (en) 2013-03-14 2022-02-08 Nanosys, Inc. Method for solventless quantum dot exchange
KR101525525B1 (en) 2014-02-05 2015-06-03 삼성전자주식회사 Nanocrystals particles and processes for preparing the same
EP2905321B1 (en) * 2014-02-05 2019-05-15 Samsung Electronics Co., Ltd Semiconductor nanocrystal particles and processes for synthesizing the same
MX2017015587A (en) 2015-06-01 2018-08-23 Univ Illinois Alternative approach to uv sensing.
US10677647B2 (en) 2015-06-01 2020-06-09 The Board Of Trustees Of The University Of Illinois Miniaturized electronic systems with wireless power and near-field communication capabilities
WO2017030857A1 (en) 2015-08-19 2017-02-23 3M Innovative Properties Company Perfluoroether-stabilized quantum dots
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
CN114538369A (en) * 2015-12-31 2022-05-27 陶氏环球技术有限责任公司 Continuous flow synthesis of nanostructured materials
US11320577B2 (en) 2016-10-31 2022-05-03 Nanosys, Inc. Radiation absorbing element for increasing color gamut of quantum dot based display devices
WO2018167645A1 (en) 2017-03-14 2018-09-20 3M Innovative Properties Company Additive stabilized composite nanoparticles
US11092850B2 (en) 2017-08-25 2021-08-17 Nanosys, Inc. Using multiple excitation wavelengths in nanostructure based display devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US20030214699A1 (en) * 2002-05-15 2003-11-20 Uri Banin Method for producing inorganic semiconductor nanocrystalline rods and their use

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US20030214699A1 (en) * 2002-05-15 2003-11-20 Uri Banin Method for producing inorganic semiconductor nanocrystalline rods and their use

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8592037B2 (en) 2004-01-15 2013-11-26 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US8749130B2 (en) 2004-01-15 2014-06-10 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US9105555B2 (en) 2004-06-04 2015-08-11 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US9324733B2 (en) 2004-06-04 2016-04-26 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US9450043B2 (en) 2004-06-04 2016-09-20 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US7943491B2 (en) 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US9515025B2 (en) 2004-06-04 2016-12-06 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US8871623B2 (en) 2004-06-08 2014-10-28 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8981452B2 (en) 2004-06-08 2015-03-17 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US9149836B2 (en) 2004-06-08 2015-10-06 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US8558304B2 (en) 2004-06-08 2013-10-15 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8507390B2 (en) 2004-06-08 2013-08-13 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US9601671B2 (en) 2007-01-17 2017-03-21 The Board Of Trustees Of The University Of Illinois Optical systems fabricated by printing-based assembly
US9117940B2 (en) 2007-01-17 2015-08-25 The Board Of Trustees Of The University Of Illinois Optical systems fabricated by printing-based assembly
US8905772B2 (en) 2008-03-05 2014-12-09 The Board Of Trustees Of The University Of Illinois Stretchable and foldable electronic devices
US8946683B2 (en) 2008-06-16 2015-02-03 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
US9012784B2 (en) 2008-10-07 2015-04-21 Mc10, Inc. Extremely stretchable electronics
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US9289132B2 (en) 2008-10-07 2016-03-22 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8916064B2 (en) 2009-05-01 2014-12-23 Nanosys, Inc. Functionalized matrices for dispersion of nanostructures
US8865489B2 (en) 2009-05-12 2014-10-21 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
US9554484B2 (en) 2012-03-30 2017-01-24 The Board Of Trustees Of The University Of Illinois Appendage mountable electronic devices conformable to surfaces
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer

Also Published As

Publication number Publication date
WO2005022120A2 (en) 2005-03-10
JP2006521278A (en) 2006-09-21
AU2004269297A1 (en) 2005-03-10
EP1601612A2 (en) 2005-12-07
CA2518352A1 (en) 2005-03-10

Similar Documents

Publication Publication Date Title
WO2005022120A3 (en) Process for producing nanocrystals and nanocrystals produced thereby
CA2473120A1 (en) Metal porous body manufacturing method
WO2006055679A3 (en) Method for preparing single walled carbon nanotubes
AU2003213407A1 (en) Dna nanocage by self-organization of dna and process for producing the same, and dna nanotube and molecule carrier using the same
WO2005108504A3 (en) Carbon black and multi-stage process for making same
CA2462957A1 (en) In situ thermal processing of a hydrocarbon containing formation and upgrading of produced fluids prior to further treatment
EP1300364A3 (en) Method for producing nanocarbon material
WO2003035792A1 (en) Exothermic composition and exothermic article using the composition, and method for producing the exothermic article
EP1477481A4 (en) Process for producing quinazolin-4-one derivative
EP1500433A4 (en) Catalyst for partial oxidation of hydrocarbon, process for producing the same, process for producing hydrogen-containing gas with the use of the catalyst and method of using hydrogen-containing gas produced with the use of the catalyst
WO2004046333A3 (en) Ethanol production by simultaneous saccharification and fermentation (ssf)
WO2005094230A3 (en) Hollow nanocrystals and method of making
WO2005019104A3 (en) Controlled nanotube fabrication and uses
WO2008028681A3 (en) Method for preparing nanocrystalline mixed metal oxides and nanocrystalline mixed metal oxides obtained by said method
WO2004092069A8 (en) Method for the preparation of a composition of nanoparticles of at least one crystalline metal oxide
ATE323551T1 (en) METHOD FOR PRODUCING AMMONIA AND AMMONIA SYNTHESIS CATALYST
EP1524242A3 (en) Method and apparatus for manufacturing carbon nanotube, and material used therein for decomposing a precursor gas
AU2003291987A1 (en) Method for regenerating a hydrogenation catalyst
EP1975156A4 (en) Method for depolymerizing polyamide and method for producing monomer of polyamide
WO2006101637A3 (en) Producing a stable catalyst for nanotube growth
MXPA02012376A (en) Method for producing 5-aminosalicyclic acid.
WO2001042250A3 (en) Process for production of diphenyl-dialkoxysilane, phenylalkyl-dialkoxysilane, octaphenylcyclotetrasiloxane and sym-tetraalkyltetraphenyl-cyclotetrasiloxane
CN100396371C (en) Carbonizing-body diamond catalyst and preparing method
WO2003087118A3 (en) Method for producing beta-l-2'deoxy-thymidine
EP1055454A3 (en) Catalyst for producing carbon and method of producing carbon

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2518352

Country of ref document: CA

Ref document number: 2006509242

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2004775831

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2004269297

Country of ref document: AU

ENP Entry into the national phase

Ref document number: 2004269297

Country of ref document: AU

Date of ref document: 20040310

Kind code of ref document: A

WWP Wipo information: published in national office

Ref document number: 2004269297

Country of ref document: AU

WWP Wipo information: published in national office

Ref document number: 2004775831

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2004775831

Country of ref document: EP