WO2005010963A1 - 照明光学装置、露光装置および露光方法 - Google Patents
照明光学装置、露光装置および露光方法 Download PDFInfo
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- WO2005010963A1 WO2005010963A1 PCT/JP2004/009128 JP2004009128W WO2005010963A1 WO 2005010963 A1 WO2005010963 A1 WO 2005010963A1 JP 2004009128 W JP2004009128 W JP 2004009128W WO 2005010963 A1 WO2005010963 A1 WO 2005010963A1
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- light
- plane
- transmitting member
- crystal
- incident
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Definitions
- Illumination optical device Illumination optical device, exposure apparatus, and exposure method
- the present invention relates to an illumination optical device, an exposure device, and an exposure method, and more particularly, to an exposure device for manufacturing micro devices such as a semiconductor device, an imaging device, a liquid crystal display device, and a thin-film magnetic head by a lithography process.
- a light beam emitted from a light source passes through a fly-eye lens as an optical integrator to a secondary light source as a substantial surface light source composed of many light sources.
- the luminous flux from the secondary light source is restricted via an aperture stop located near the rear focal plane of the fly-eye lens, and then enters the condenser lens.
- the light beam condensed by the condenser lens illuminates the mask on which a predetermined pattern is formed in a superimposed manner.
- the light transmitted through the mask pattern forms an image on the wafer via the projection optical system.
- the mask pattern is projected and exposed (transferred) on the wafer. Since the pattern formed on the mask is highly integrated, it is essential to obtain a uniform illuminance distribution on the wafer in order to accurately transfer this fine pattern onto the wafer.
- ⁇ value aperture stop diameter ⁇ pupil diameter of the projection optical system.
- ⁇ value numerical aperture on the exit side of the illumination optical system ⁇ numerical aperture on the incident side of the projection optical system. Attention has also been focused on a technology that forms an annular or quadrupolar secondary light source on the rear focal plane of the fly-eye lens to improve the depth of focus and resolution of the projection optical system.
- a circular secondary Normal circular illumination based on a light source is performed, and modified illumination (annular illumination or quadrupole illumination) based on a secondary light source in the form of a ring or quadrupole is performed.
- modified illumination annul illumination or quadrupole illumination
- a secondary light source in the form of a ring or quadrupole
- fluorite is generally used for a light transmitting member that receives irradiation with light having a high energy density to ensure required durability.
- fluorite has a characteristic of changing the polarization state of emitted light upon irradiation with laser light. If the incident linearly polarized light changes to elliptically polarized light through the fluorite-made light-transmitting member, the change in the polarization state, which not only prevents the quartz prism from functioning as a depolarizing element, enters the sensor. Since the ratio of the polarization component of the light itself is changed, accurate light quantity control becomes difficult.
- the present invention has been made in view of the above-described problems, and it is an object of the present invention to suppress a change in the polarization state of linearly polarized light transmitted through a light transmitting member formed of a cubic crystal material such as fluorite. It is an object of the present invention to provide an optical system and an illumination optical device that can be used. In addition, the present invention provides an illumination optical apparatus capable of suppressing a change in the polarization state of linearly polarized light, and performs good exposure under appropriate illumination conditions realized according to the pattern characteristics of a mask. It is an object of the present invention to provide an exposure apparatus and an exposure method that can be performed.
- an optical system including a light transmitting member formed of a crystalline material includes:
- the fast axis direction related to the birefringence change of the light transmitting member when receiving the light irradiation is set so as to substantially coincide with or substantially perpendicular to the vibration direction of the electric field of the linearly polarized light incident on the light transmitting member.
- an illumination optical device including the optical system of the first aspect, wherein the illuminated surface is illuminated with light passing through the optical system.
- a third embodiment of the present invention includes a light transmitting member formed of a cubic crystal material.
- An illumination optical device that illuminates an irradiated surface with light through the light transmitting member
- An illumination optical device is provided, wherein the light traveling direction in the light transmitting member is set to be closer to the crystal orientation 11 1> or the crystal orientation 100> than the crystal orientation 110>.
- the light transmitting member has an optical member fixedly positioned in an optical path, and an optical axis of the optical member has a crystal orientation of 111> or The crystal orientation is set to approximately match 100>.
- the light transmitting member has a prism, and the entrance surface and the exit surface of the prism are set to substantially coincide with the crystal plane ⁇ 100 ⁇ .
- the light transmitting member has a prism, and an entrance surface and an exit surface of the prism are set so as to substantially coincide with a crystal plane ⁇ 111 ⁇ .
- the light transmitting member has a prism, one of an entrance surface and an exit surface of the prism substantially coincides with a crystal plane ⁇ 111 ⁇ , and the other surface has a crystal plane ⁇ 100 ⁇ or a crystal plane.
- it is set to substantially match ⁇ 211 ⁇ .
- the light transmitting member has a right-angle prism as a back-surface reflecting mirror, and a reflection surface of the right-angle prism is substantially equal to a crystal plane ⁇ 100 ⁇ .
- a plane extending between the optical axis of the entrance surface of the right-angle prism and the optical axis of the exit surface of the right-angle prism is set to substantially coincide with the crystal plane ⁇ 110 ⁇ .
- the light transmitting member has a right-angle prism as a back-surface reflecting mirror, and is stretched by a reflection surface of the right-angle prism, an optical axis of an incident surface of the right-angle prism, and an optical axis of an exit surface of the right-angle prism.
- both planes are set so as to substantially coincide with the crystal plane ⁇ 110 ⁇ .
- the light transmitting member is provided in the optical path so as to be tiltable with respect to an optical axis, and translates a light ray incident along the optical axis.
- the optical axis of the parallel plane plate is set so as to substantially coincide with the crystal orientation ⁇ 100>.
- the plane-parallel plate is capable of tilting in a direction from a crystal orientation of 100> to a crystal orientation of 111>.
- the light transmitting member is provided in the optical path so as to be tiltable with respect to an optical axis, and translates a light ray incident along the optical axis.
- the optical axis of the parallel plane plate is in a crystal orientation of about 111>. It is set to almost match.
- the plane-parallel plate can be inclined in the direction of direction from the crystal orientation of 11 1> to the crystal orientation of 100>.
- the light transmitting member includes a first parallel flat plate that can be tilted around a first axis, and a second flat plate that is tilted about a second axis substantially orthogonal to the first axis. And a possible second parallel flat plate.
- the fast axis direction related to the birefringence variation of the light transmitting member when receiving the light irradiation substantially coincides with or substantially orthogonal to the vibration direction of the electric field of the linearly polarized light incident on the light transmitting member. It is preferable to set
- an illumination optical device according to the second or third aspect, wherein a pattern of a mask is exposed on a photosensitive substrate disposed on the surface to be irradiated.
- An optical device is provided.
- the mask is illuminated via the illumination optical device according to the second or third aspect, and the pattern formed on the illuminated mask is exposed on a photosensitive substrate.
- An exposure method is provided.
- the fast axis direction relating to the birefringence variation of the light transmitting member formed of a cubic crystal material such as fluorite is incident on the light transmitting member. Since the vibration direction of the electric field of the linearly polarized light is set to substantially coincide with or substantially perpendicular to the vibration direction, the change in the polarization state of the linearly polarized light transmitted through the light transmitting member can be suppressed. Therefore, for example, when the illumination optical device of the present invention is mounted on an exposure apparatus, it is possible to change the polarization state of the illumination light in accordance with the pattern characteristics of the mask to realize appropriate illumination conditions.
- the exposure apparatus and the exposure method using the illumination optical device of the present invention it is possible to change the polarization state of the illumination light in accordance with the pattern characteristics of the mask and to realize an appropriate illumination condition.
- Good exposure can be performed under appropriate illumination conditions realized according to the pattern characteristics, and a good device can be manufactured with high throughput and throughput.
- FIG. 1 is a view schematically showing a configuration of an exposure apparatus including an illumination optical device according to an embodiment of the present invention.
- FIG. 2 is a diagram showing an annular secondary light source and a quadrupolar secondary light source formed in annular illumination and quadrupole illumination.
- FIG. 3 is a view showing a dipole secondary light source formed in dipole illumination.
- FIG. 4 is a diagram schematically showing the configurations of a phase member and a deborizer in FIG. 1.
- FIG. 5 is a diagram schematically showing a configuration of a polarization state switching unit that works in a first modified example.
- FIG. 6 is a diagram schematically showing a configuration of a polarization state switching unit that works in a second modification.
- FIG. 7 is a drawing schematically showing a configuration of a polarization state switching unit that works in a third modification.
- FIG. 8 is a diagram schematically showing a configuration of a debolalizer working in a modified example.
- FIG. 9 is a diagram schematically showing an internal configuration of a beam matching unit arranged between the light source and the polarization state switching means in FIG. 1.
- FIG. 10 is a diagram illustrating a crystal orientation of fluorite.
- FIG. 11 is a view schematically showing an example in which a ⁇ wavelength plate for converting elliptically polarized light into linearly polarized light is provided in the polarization state switching means.
- FIG. 12 is a flowchart of a method for obtaining a semiconductor device as a micro device.
- FIG. 13 is a flowchart of a method for obtaining a liquid crystal display element as a micro device.
- FIG. 14 is a diagram showing how the polarization state of light changes when incident light of linearly polarized light passes through a birefringent medium.
- FIG. 15 is a view corresponding to FIG. 10 and illustrating the crystal orientation of fluorite according to another expression method.
- FIG. 16 Schematically shows the change in birefringence variation of fluorite when the crystal orientation is changed between [001] and [110] and ArF excimer laser light is incident along the crystal orientation.
- FIG. 18 is a view corresponding to FIG. 16, and schematically showing a change in birefringence variation of fluorite when the energy density of incident light is extremely high.
- FIG. 19 is a diagram illustrating an example of setting of a crystal orientation in a right-angle prism.
- FIG. 20 is a diagram for explaining another example of the setting of the crystal orientation in the right-angle prism.
- FIG. 21 is a diagram illustrating still another example of setting of the crystal orientation in the right-angle prism.
- FIG. 22 is a diagram illustrating still another example of setting of the crystal orientation in the right-angle prism.
- FIG. 23 is a view for explaining the arrangement of crystal orientations as viewed from the direction of crystal orientation 100>.
- FIG. 24 is a view for explaining the arrangement of crystal orientations as viewed from the crystal orientation ⁇ 111>.
- FIG. 1 is a diagram schematically showing a configuration of an exposure apparatus including an illumination optical device according to an embodiment of the present invention.
- the Z-axis is along the normal direction of the wafer W as a photosensitive substrate
- the Y-axis is in a direction parallel to the plane of FIG. 1 in the plane of the wafer
- the Y-axis is perpendicular to the plane of FIG. 1 in the plane of the wafer.
- the X axis is set for each direction.
- the illumination optical device is set to perform annular illumination.
- the exposure apparatus of the present embodiment includes a laser light source 1 for supplying exposure light (illumination light).
- a laser light source 1 for example, a KrF excimer laser light source that supplies light having a wavelength of 248 nm or an ArF excimer laser light source that supplies light having a wavelength of 193 nm can be used.
- a substantially parallel light beam emitted from the laser light source 1 along the Z direction has a rectangular cross section elongated in the X direction and enters a beam expander 2 composed of a pair of lenses 2a and 2b. .
- Each of the lenses 2a and 2b has a negative refracting power and a positive refracting power, respectively, in the plane of the paper of FIG. 1 (in the YZ plane). Therefore, the luminous flux incident on the beam expander 2 is enlarged in the plane of FIG. Is formed into a light beam having
- a substantially parallel light beam passing through a beam expander 2 as a shaping optical system is deflected in the Y direction by a bending mirror 13, and thereafter, a phase member 10, a devolarizer (non-polarizing element) 20, and The light enters the afocal zoom lens 5 via the diffractive optical element 4.
- the configuration and operation of the phase member 10 and the deborizer 20 will be described later.
- a diffractive optical element is formed by forming a step having a pitch on the order of the wavelength of exposure light (illumination light) on a substrate, and has an action of diffracting an incident beam to a desired angle.
- the diffractive optical element 4 has a function of forming a circular light intensity distribution in the far field or the Fraunhofer diffraction region when a parallel light beam having a rectangular cross section is incident. .
- the light beam having passed through the diffractive optical element 4 forms a circular light intensity distribution at the pupil position of the afocal zoom lens 5, that is, a light beam having a circular cross section.
- the diffractive optical element 4 is configured to be retractable from the illumination optical path.
- the afo power zoom lens 5 is configured so that the magnification can be continuously changed within a predetermined range while maintaining an afocal system (a non-focus optical system).
- the light beam having passed through the afocal zoom lens 5 enters a diffractive optical element 6 for annular illumination.
- the afocal zoom lens 5 optically connects the divergence origin of the diffraction optical element 4 and the diffraction surface of the diffraction optical element 6 almost optically conjugate. Then, the numerical aperture of the light beam condensed on one point on the diffraction surface of the diffractive optical element 6 or on a surface in the vicinity thereof changes depending on the magnification of the zoom lens 5.
- the diffractive optical element 6 for annular illumination has a function of forming a ring-shaped light intensity distribution in the far field when a parallel light beam enters.
- the diffractive optical element 6 is configured to be detachable from the illumination optical path, and has a diffractive optical element 60 for quadrupole illumination, a diffractive optical element 61 for circular illumination, and a diffractive optical element 62 for dipole illumination in the X direction. It is configured to be switchable with the diffractive optical element 63 for dipole illumination in the Y direction.
- the diffractive optical element 60 for quadrupole illumination the diffractive optical element 61 for circular illumination, the diffractive optical element 62 for dipole illumination in the X direction, and the diffractive optical element 63 for dipole illumination in the Y direction will be described. It will be described later.
- the light beam having passed through the diffractive optical element 6 enters the zoom lens 7.
- the entrance surface of the micro lens array (or fly-eye lens) 8 is located near the rear focal plane of the zoom lens 7. It is decided.
- the microlens array 8 is an optical element composed of a large number of microlenses having a positive refractive power arranged vertically and horizontally and densely. In general, a microlens array is formed by, for example, performing etching on a plane-parallel plate to form a group of microlenses.
- each micro lens constituting the micro lens array is smaller than each lens element constituting the fly-eye lens.
- the microlens array has a large number of microlenses (microrefractive surfaces) formed integrally without being isolated from each other.
- the microlens array is a wavefront splitting optical integrator similar to a fly-eye lens in that lens elements having positive refractive power are arranged vertically and horizontally.
- the light flux from the circular light intensity distribution formed at the pupil position of the afocal zoom lens 5 via the diffractive optical element 4 is emitted from the afocal zoom lens 5 Are incident on the diffractive optical element 6 as light beams having various angle components. That is, the diffractive optical element 4 constitutes an optical integrator having an angle luminous flux forming function.
- the diffractive optical element 6 has a function as a light beam conversion element that forms a ring-shaped light intensity distribution in its far field when a parallel light beam enters.
- the light beam passing through the diffractive optical element 6 is applied to the rear focal plane of the zoom lens 7 (and, consequently, to the entrance plane of the microlens array 8), for example, through an annular illumination field centered on the optical axis AX.
- the outer diameter of the annular illumination field formed on the entrance surface of the microlens array 8 changes depending on the focal length of the zoom lens 7.
- the zoom lens 7 connects the diffractive optical element 6 and the incident surface of the microlens array 8 substantially in a Fourier transform relationship.
- the light beam incident on the microlens array 8 is split two-dimensionally, and the rear focal plane of the microlens array 8 has the same ring as the illumination field formed by the incident light beam, as shown in Fig. 2 (a).
- a plurality of strip-shaped light sources hereinafter, referred to as “secondary light sources”.
- the light flux from the annular secondary light source formed on the rear focal plane of the microlens array 8 is subjected to the condensing action of the condenser optical system 9 and then passes through the mask M on which a predetermined pattern is formed. Illuminate in a superimposed manner.
- the light beam transmitted through the pattern of the mask M passes through the projection optical system PL.
- an image of a mask pattern is formed on the wafer w which is a photosensitive substrate.
- each exposure area of the wafer W is sequentially exposed.
- the center height (distance of the circular center line from the optical axis AX) dO of the annular secondary light source does not change. (1/2 of the difference between the outer diameter (diameter) and the inner diameter (diameter)) changes only wO. That is, by changing the magnification of the afocal zoom lens 5, both the size (outer diameter) of the annular secondary light source and its shape (ring ratio: inner diameter Z outer diameter) can be changed.
- both the center height dO and its width wO which do not change the annular ratio of the annular secondary light source, change. That is, by changing the focal length of the zoom lens 7, the outer diameter of the annular secondary light source can be changed without changing the annular ratio.
- the magnification of the afocal zoom lens 5 and the focal length of the zoom lens 7 only the annular ratio without changing the outer diameter of the annular secondary light source. Can be changed.
- the diffractive optical element 60 for quadrupole illumination has a function of forming a four-point light intensity distribution in the far field when a parallel light beam enters. Therefore, the light beam passing through the diffractive optical element 60 forms a quadrupole illumination field composed of, for example, four circular illumination fields centered on the optical axis AX on the incidence surface of the microlens array 8. As a result, as shown in FIG. 2 (b), a quadrupolar secondary light source having the same illumination field formed on the incident surface is also formed on the rear focal plane of the microlens array 8.
- the outer diameter of the quadrupole secondary light source (externally attached to the four circular surface light sources). Both the diameter of the circle and the annular ratio (the diameter of the circle inscribed in the four circular surface light sources Di and the diameter of the circle circumscribed in the four circular surface light sources Do) can be changed. . Further, by changing the focal length of the zoom lens 7, the outer diameter of the quadrupole secondary light source can be changed without changing the annular ratio. As a result, the afocal zoom lens 5 By appropriately changing the magnification of the zoom lens 7 and the focal length of the zoom lens 7, only the annular ratio can be changed without changing the outer diameter of the quadrupole secondary light source.
- a normal circular illumination can be achieved. It can be performed.
- the luminous flux having a rectangular cross section is incident on the a-force force zoom lens 5 along the optical axis AX.
- the light beam incident on the afocal zoom lens 5 is enlarged or reduced in accordance with the magnification, and is emitted from the afocal zoom lens 5 along the optical axis AX as a light beam having a rectangular cross-section, and the diffractive optical element 61 Incident on.
- the diffractive optical element 61 for circular illumination forms a circular light intensity distribution in the far field when a parallel light beam having a rectangular cross section is incident. It has a function to do. Therefore, the circular light beam formed by the diffractive optical element 61 forms a circular illumination field centered on the optical axis AX on the incident surface of the microlens array 8 via the zoom lens 7. As a result, a circular secondary light source centered on the optical axis AX is also formed on the rear focal plane of the microlens array 8. In this case, by changing the magnification of the focal zoom lens 5 or the focal length of the zoom lens 7, the outer diameter of the circular secondary light source can be appropriately changed.
- the diffractive optical element 62 for dipole illumination in the X direction has a function of forming two-point light intensity distributions spaced along the X direction in the far field when a parallel light beam enters. Therefore, the light beam passing through the diffractive optical element 62 is incident on the incidence surface of the microlens array 8, for example, in the form of a dipole comprising two circular illumination fields spaced along the X direction with the optical axis AX as a center.
- a dipolar secondary light source along the same X direction as the illumination field formed on the incident surface is also provided on the rear focal plane of the microlens array 8. It is formed.
- the diffractive optical element 63 in the illumination optical path instead of the diffractive optical element 6, 60, 61 or 62, dipole illumination in the Y direction can be performed.
- the diffractive optical element 63 for dipole illumination in the Y-direction illuminates the far field in the Z-direction (mass It has the function of forming a two-point light intensity distribution that is spaced apart along the laser and wafer (corresponding to the Y direction). Therefore, the light beam that has passed through the diffractive optical element 63 is applied to the entrance surface of the microphone aperture lens array 8 by, for example, a two-pole illumination field consisting of two circular illumination fields spaced along the ⁇ direction with the optical axis ⁇ as the center. The illuminated field is formed.
- a dipole secondary light source along the same ⁇ direction as the illumination field formed on the incident surface is also provided on the rear focal plane of the microlens array 8. It is formed.
- the outer diameter of the dipole secondary light source (the outer diameter of the two circular surface light sources is circumscribed).
- the diameter of the circle do and the annular ratio (the diameter of the circle circumscribed by the two circular surface light sources diZ and the diameter of the circle circumscribed by the two circular surface light sources do) can both be changed.
- the focal length of the zoom lens 7 the outer diameter of the dipole secondary light source can be changed without changing the annular ratio.
- FIG. 4 is a diagram schematically showing the configurations of the phase member and the deborizer in FIG.
- the phase member 10 is constituted by a half-wave plate in which the crystal optical axis is rotatable about the optical axis AX.
- the deborizer 20 is composed of a wedge-shaped quartz prism 20a and a wedge-shaped quartz prism 2 Ob having a shape complementary to the quartz prism 20a.
- the quartz prism 20a and the quartz prism 20b are configured as an integral prism assembly so that they can be inserted into and removed from the illumination optical path.
- a KrF excimer laser light source or an ArF excimer laser light source is used as the laser light source 1
- linearly polarized light enters the half-wavelength plate 10.
- the crystal optic axis of the half-wave plate 10 When the crystal optic axis of the half-wave plate 10 is set to make an angle of 0 degree or 90 degrees with respect to the plane of polarization of the linearly polarized light that has entered, the light enters the half-wave plate 10 Linearly polarized light passes through without change in the plane of polarization. Also, if the crystal optic axis of the half-wave plate 10 is set to make an angle of 45 degrees with respect to the plane of polarization of the linearly polarized light that enters, the linearly-polarized light that has entered the half-wave plate 10 It is converted to linearly polarized light whose polarization plane has changed by 90 degrees. Further, the polarization of the linearly polarized light incident on the crystal optic axis of the quartz prism 20a. When the angle is set to 45 degrees with respect to the light plane, the linearly polarized light incident on the quartz prism 20a is converted (unpolarized) into light in a non-polarized state.
- the crystal optic axis of the quartz prism 20a when the debolizer 20 is positioned in the illumination light path, the crystal optic axis of the quartz prism 20a is configured to form an angle of 45 degrees with respect to the plane of polarization of the linearly polarized light to be incident. I have.
- the crystal optic axis of the quartz prism 20a is set to make an angle of 0 or 90 degrees with respect to the plane of polarization of the linearly polarized light that enters, the plane of polarization of the linearly polarized light that enters the crystal prism 20a will have a plane of polarization. Pass through unchanged.
- the linearly polarized light that enters the 1Z2 wavelength plate 10 Is converted into unpolarized light that includes a linearly polarized light component that passes through the polarization plane without change and a linearly polarized light component whose polarization plane has changed by 90 degrees.
- linearly polarized light from the laser light source 1 is incident on the half-wave plate 10, but for simplicity of description below, P-polarized light It is assumed that the light enters the half-wave plate 10.
- the devolarizer 20 is positioned in the illumination optical path, if the crystal optic axis of the half-wavelength plate 10 is set to make an angle of 0 degree or 90 degrees with respect to the plane of polarization of the incident P-polarized light, The P-polarized light that has entered the wave plate 10 passes through the P-polarized light without change in the polarization plane and enters the quartz prism 20a.
- the crystal optical axis of the quartz prism 20a is set at an angle of 45 degrees with respect to the plane of polarization of the incident P-polarized light, the P-polarized light that has entered the quartz prism 20a is unpolarized light. Is converted to
- the light depolarized through the quartz prism 20a passes through the quartz prism 20b as a coater for compensating the traveling direction of the light, and passes through the mask M (and thus ⁇ , W) in a non-polarized state. Lighting).
- the crystal optic axis of the 1Z2 wave plate 10 is set at an angle of 45 degrees with respect to the polarization plane of the incident P-polarized light, the polarization plane of the P-polarized light It changes by the degree, becomes S-polarized light, and enters the quartz prism 20a.
- the S-polarized light that has entered the quartz prism 20a is a non-polarized light. And illuminates the mask M in a non-polarized state via the quartz prism 20b.
- the deborizer 20 when the deborizer 20 is retracted from the illumination optical path, the 1Z2 wave plate 10
- the crystal optic axis is set at an angle of 0 or 90 degrees to the plane of polarization of the incident P-polarized light
- the P-polarized light incident on the half-wave plate 10 does not change its polarization plane.
- the mask M is illuminated with light in the P-polarized state, passing through as it is.
- the crystal optic axis of the half-wave plate 10 is set at an angle of 45 degrees with respect to the polarization plane of the incident P-polarized light, the P-polarized light entering the half-wave plate 10 Changes by 90 degrees to become S-polarized light, and illuminates the mask M with light in the S-polarized state.
- the mask M can be illuminated in a non-polarized state by inserting the devolarizer 20 into the illumination optical path and positioning it. Also, the depolarizer 20 is retracted from the illumination optical path, and the crystal optic axis of the half-wave plate 10 is set so as to make an angle of 0 degree or 90 degrees with respect to the polarization plane of the incident P-polarized light. The mask M can be illuminated in this state. Furthermore, by setting the deborizer 20 away from the illumination optical path and setting the crystal optic axis of the half-wave plate 10 so as to make an angle of 45 degrees with respect to the polarization plane of the P-polarized light to be incident, the mask M is set in the S-polarized state. Can be illuminated.
- the light of the light illuminating the mask M (therefore, the wafer W) as the surface to be illuminated is operated by the action of the polarization state switching means composed of the half-wave plate 10 and the deborizer 20.
- the polarization state can be switched between the linear polarization state and the non-polarization state, and when illuminated with linearly polarized light, it switches between the P polarization state and the S polarization state (variable polarization plane of linear polarization) And).
- the wafer is illuminated. It is possible to faithfully expose a pattern with a very small line width along the X direction in the critical layer on W.
- switching to Y-direction dipole illumination and illuminating the mask M with linearly polarized light having a plane of polarization along the Y direction on the mask M Very small patterns along the line width can be faithfully exposed.
- the mask M is illuminated with unpolarized light while switching to, for example, dipole illumination, or quadrupole illumination, annular illumination, or circular illumination.
- a two-dimensional pattern having a relatively large line width in a non-critical layer (middle layer or rough layer) on the wafer W can be exposed at a high throughput.
- this is only an example, and in general, the appropriate shape or size of the secondary light source is set according to the pattern characteristics of the mask M, and the light that illuminates the mask M is appropriately polarized. By setting to, it is possible to perform good exposure under appropriate lighting conditions.
- the scattering on the surface of the resist layer formed on the wafer W differs between the case where the P-polarized light beam is obliquely incident and the case where the S-polarized light beam is obliquely incident.
- the reflectance of S-polarized light is higher than that of P-polarized light, so that P-polarized light reaches deeper into the resist layer than s-polarized light.
- the half-wave plate 10 as a phase member for changing the polarization plane of the incident linearly polarized light as necessary is arranged on the light source side, and the incident linearly polarized light is changed.
- a deborizer 20 for depolarizing the light as needed is arranged on the mask side.
- the same optical action and effect can be obtained even if the devolarizer 20 which is not limited to this is arranged on the light source side and the half-wave plate 10 is arranged on the mask side.
- the quartz prism 20b is used as a compensator for compensating the traveling direction of light passing through the quartz prism 20a.
- a wedge-shaped prism made of an optical material having high durability against KrF excimer laser light or ArF excimer laser light, such as quartz or fluorite, is used as a compensator. You can also be. This is the same in other related modified examples.
- FIG. 5 is a diagram schematically showing a configuration of a polarization state switching unit according to a first modification.
- the polarization state switching means according to the first modified example of FIG. It has a configuration similar to the switching means.
- the debolizer 20 is configured to be detachable from the illumination optical path
- the quartz prism 20a and the quartz prism The fundamental difference is that the crystal prism 20a and the crystal prism 20a are rotatable about the optical axis AX, and the crystal optical axis of the quartz prism 20a is basically rotatable about the optical axis AX.
- the first modified example of FIG. 5 will be described, focusing on differences from the embodiment of FIG.
- the crystal optic axis of the half-wave plate 10 is set to make an angle of 0 or 90 degrees with respect to the polarization plane of the incident P-polarized light, the half-wave plate 10
- the P-polarized light incident on the prism passes through the P-polarized light without changing the polarization plane and enters the quartz prism 20a.
- the crystal optic axis of the quartz prism 20a is set to form an angle of 45 degrees with respect to the plane of polarization of the incident P-polarized light, the P-polarized light incident on the quartz prism 20a becomes unpolarized light.
- the mask M is illuminated in a non-polarized state through the converted prism prism 20b.
- the crystal optical axis of the quartz prism 20a is set to make an angle of 0 or 90 degrees with respect to the plane of polarization of the incident P-polarized light, the plane of polarization of the P-polarized light incident on the quartz prism 20a will The light passes through the P-polarized light without change, and illuminates the mask M in the P-polarized state via the quartz prism 20b.
- the crystal optic axis of the half-wave plate 10 is set to form an angle of 45 ° with respect to the polarization plane of the incident P-polarized light
- the light changes its polarization plane by 90 degrees, becomes S-polarized light, and enters the quartz prism 20a.
- the crystal optic axis of the quartz prism 20a is set to make an angle of 45 degrees with respect to the plane of polarization of the incident P-polarized light
- the S-polarized light incident on the quartz prism 20a will be unpolarized light. And illuminates the mask M in a non-polarized state via the English prism 20b.
- the crystal optic axis of the quartz prism 20a is set to make an angle of 0 ° or 90 ° with respect to the plane of polarization of the incident S-polarized light, the plane of polarization of the S-polarized light incident on the quartz prism 20a will change.
- the mask M is illuminated in the S-polarized state via the quartz prism 20b without passing through the S-polarized light.
- the light illuminating the mask M is obtained by combining the rotation of the 1Z2 wavelength plate 10 around the optical axis AX and the rotation of the quartz prism 20a around the optical axis AX. Can be switched between a linearly polarized state and a non-polarized state. When illuminating with, it is possible to switch between the P polarization state and the s polarization state.
- the half-wave plate 10 is arranged on the light source side, and the deborizer 20 is arranged on the mask side. The same optical effect can be obtained even if the plate 10 is arranged on the mask side.
- FIG. 6 is a diagram schematically showing a configuration of a polarization state switching unit according to a second modification.
- the polarization state switching means according to the second modification of FIG. 6 has a configuration similar to that of the polarization state switching means used in the embodiment of FIG.
- the devolarizer 20 is configured to be freely detachable from the illumination optical path, whereas in the second modification of FIG. 6, the devolarizer 20 is fixedly positioned in the illumination optical path. This is basically the difference.
- the second modified example of FIG. 6 will be described, focusing on differences from the embodiment of FIG.
- the crystal optical axis of the quartz prism 20a is positioned so as to form an angle of 0 ° or 90 ° with respect to the polarization plane of the incident P-polarized light. Therefore, if the crystal optic axis of the 1Z2 wave plate 10 is set to make an angle of 0 degree or 90 degrees with respect to the polarization plane of the incident P-polarized light, the P-polarized light incident on the 1/2 wave plate 10 The light passes through the P-polarized light without change in the polarization plane and enters the quartz prism 20a.
- the crystal optical axis of the crystal prism 20a is positioned so as to form an angle of 0 or 90 with respect to the plane of polarization of the incident P-polarized light. Passes through the P-polarized light without changing the polarization plane, and illuminates the mask M in the P-polarized state via the quartz prism 20b
- the crystal optic axis of the half-wave plate 10 When the crystal optic axis of the half-wave plate 10 is set to form an angle of 45 degrees with respect to the polarization plane of the incident P-polarized light, The light changes its polarization plane by 90 degrees, becomes S-polarized light, and enters the quartz prism 20a. Since the crystal optic axis of the quartz prism 20a is positioned so as to form an angle of 0 ° or 90 ° with respect to the plane of polarization of the incident S-polarized light, the S-polarized light that has entered the quartz prism 20a has a plane of polarization. S-polarized light passes through without change and illuminates the mask M in the S-polarized state via the quartz prism 20b.
- the P light incident on the 1Z2 wave plate 10 is set as described above.
- Polarized The light is converted into non-polarized light including a P-polarized component that passes through the polarization plane without change and an S-polarized component whose polarization plane has changed by 90 degrees, and enters the quartz prism 20a.
- the crystal optic axis of the crystal prism 20a is positioned so that it makes an angle of 0 or 90 degrees with respect to the polarization plane of the incident P-polarization component and the polarization plane of the S-polarization component. Both the P-polarized light component and the S-polarized light component incident on 20a pass through without changing the plane of polarization, and illuminate the mask M in a non-polarized state via the quartz prism 20b.
- the polarization state of the light illuminating the mask M can be switched between a linear polarization state and a non-polarization state, and when illuminated with linearly polarized light, the polarization state is switched between the P polarization state and the S polarization state. That can be S.
- the 1Z2 wavelength plate 10 is arranged on the light source side and the deborizer 20 is arranged on the mask side. The same optical action and effect can be obtained even if is disposed on the mask side.
- FIG. 7 is a diagram schematically showing a configuration of a polarization state switching unit according to a third modification.
- the polarization state switching means according to the third modification of FIG. 7 has a configuration similar to that of the polarization state switching means according to the first modification of FIG.
- the polarization state switching means is composed of the S1 / 2 wave plate 10 and the deborizer 20, whereas in the third modified example of FIG. 7, the polarization state switching means is an optical axis.
- the point is basically different in that it is constituted only by the devolarizer 20 rotatable about AX.
- the third modified example of FIG. 7 will be described, focusing on differences from the first modified example of FIG.
- the crystal optic axis of the quartz prism 20a is set to make an angle of 45 degrees with respect to the plane of polarization of the incident P-polarized light, the P-polarized light incident on the quartz prism 20a The light is converted into light in a non-polarized state, and the mask M is illuminated in a non-polarized state via the quartz prism 20b.
- the crystal optic axis of the quartz prism 20a is set at an angle of 0 or 90 degrees to the plane of polarization of the incident P-polarized light, the plane of polarization of the P-polarized light incident on the quartz prism 20a will change.
- the mask M is illuminated in the P-polarized state through the quartz prism 20b without passing through the P-polarized light.
- the polarization state of the light illuminating the mask M is changed to a linear polarization state and a non-polarization state. Can be switched between.
- the depolarizer 20 is configured to be rotatable around the optical axis AX and is configured to be freely detachable from the illumination optical path. Even if the mask M is set to be illuminated in this state, the same optical effect can be obtained.
- FIG. 8 is a diagram schematically showing a configuration of a deborizer which is applied to a modification.
- the deborrizer 20 employs a configuration having a quartz prism 20a.
- the polarization beam splitter 21a and the reflection The system (21b 21e) can also constitute the devolatilizer 21.
- the debolalizator 21 includes a polarizing beam splitter 21a disposed in the illumination light path. Of the light incident on the polarization beam splitter 21a, P-polarized light (the polarization direction is indicated by a double arrow in the figure) passes through the polarization beam splitter 21a.
- the S-polarized light (the polarization direction is indicated by a dot in the figure) is reflected by the polarizing beam splitter 21a, and then is reflected by the action of a reflecting system composed of four reflecting mirrors 21b-21e. The light is reflected only four times in a plane parallel to the plane of FIG. 8 and returns to the polarizing beam splitter 21a.
- the reflection system (21b-21e) has an optical path of the P-polarized light transmitted through the polarization beam splitter 21a and the optical path of the S-polarized light finally reflected by the polarization beam splitter 21a. It is configured to match.
- the P-polarized light transmitted through the polarization beam splitter 21a and the S-polarized light finally reflected by the polarization beam splitter 21a are emitted from the deborizer 21 along substantially the same optical path.
- S-polarized light is delayed by P-polarized light by the optical path length of the reflection system (21b-21e).
- the debolizer 21 constituted by the polarization beam splitter 21a and the reflection system (21b-21e) has an optical action basically equivalent to that of the deborizer 20 constituted by the quartz prism 20a and the quartz prism 20b.
- the devolatilizer 20 in the embodiment and the first to third modifications can be replaced with a deborizer 21 which is similar to the modification of FIG. That is, when the deborizer 21 is applied to the embodiment of FIG. 4, the polarizing beam splitter 21a and the reflecting system (21b 21e) can be integrally detachably mounted on the illumination optical path. Will be configured.
- the polarization beam splitter 21a and the reflection system (21b-21e) are moved around the optical axis AX. It is configured to be rotatable integrally. Further, when the deborizer 21 is applied to the second modified example of FIG. 6, the polarization beam splitter 21a and the reflection system (21b 21e) are fixedly positioned in the illumination light path.
- the mask M by setting the optical path length of the reflection system (21b-21e) substantially larger than the coherence length of the illumination light (exposure light), the mask M It is possible to reduce the coherency (coherence) of the laser light for illuminating the wafer W and, consequently, to reduce the contrast of speckle on the wafer W.
- a deborizer including a polarizing beam splitter and a reflection system and applicable to the present invention and various modifications thereof are described in, for example, JP-A-11-174365 and JP-A-11-312631. Reference can be made to JP-A-2000-223396 and JP-A-2000-223396.
- FIG. 9 is a diagram schematically showing an internal configuration of a beam matching unit arranged between the light source and the polarization state switching unit in FIG.
- a parallel beam supplied from a laser light source 1 passes through a pair of deflection prisms 31 and a parallel plane plate 32, and then becomes a beam.
- the light enters the expander 2.
- the laser light source 1 is installed on, for example, a floor slab A on the lower floor.
- the pair of deflection prisms 31 is configured to be rotatable around the optical axis AX. Therefore, the angle of the parallel beam with respect to the optical axis AX can be adjusted by relatively rotating the pair of deflection prisms 31 around the optical axis AX. That is, the pair of deflection prisms 31 constitute beam angle adjusting means for adjusting the angle of the parallel beam supplied from the laser light source 1 with respect to the optical axis AX.
- the parallel plane plate 32 is configured to be rotatable around two axes orthogonal to each other in a plane perpendicular to the optical axis AX.
- the parallel beam can be translated with respect to the optical axis AX by rotating the parallel plane plate 32 around each axis and inclining it with respect to the optical axis AX. That is, flat
- the row plane plate 32 constitutes beam translation means for translating the parallel beam supplied from the laser light source 1 to the optical axis AX.
- the parallel beam from the laser light source 1 through the pair of deflection prisms 31 and the parallel plane plate 32 is enlarged and shaped into a parallel beam having a predetermined cross-sectional shape through the beam expander 2, and 1Right angle Enters prism 33.
- the parallel beam deflected in the vertical direction by the first right-angle prism 33 as the back surface reflecting mirror is sequentially reflected by the second right-angle prism 34 and the fifth right-angle prism 37 also as the back surface reflecting mirror.
- the light enters the sixth right-angle prism 38 through the opening of the floor slab B on the floor.
- the second right-angle prism 34—the fifth right-angle prism 37 is deflected in the vertical direction by the first right-angle prism 33 and directed toward the sixth right-angle prism 38. It is arranged so as to bypass piping and ventilation piping 39.
- the beam deflected in the horizontal direction by the sixth right-angle prism 38 as the back surface reflecting mirror enters the half mirror 40.
- the beam reflected by the half mirror 40 is guided to a displacement deviation inclination detection system 41.
- the beam transmitted through the half mirror 40 is guided to the polarization state switching means 42 composed of the half-wave plate 10 and the debolizer 20.
- the position shift / tilt detection system 41 detects the position shift and tilt of the parallel beam incident on the polarization state switching means 42 (and eventually on the diffractive optical element 4 as an optical integrator) with respect to the optical axis AX.
- fluorite has the property of changing the polarization state of emitted light upon irradiation with laser light.
- the change in the polarization state is remarkable, and the amount of the change depends on the crystal orientation of the fluorite.
- the change in the polarization state caused by the irradiation of the laser beam is caused by the fact that the polarization state of the light that has passed through the fluorite during the laser beam irradiation start force for several tens of seconds fluctuates, and then the light is emitted. It has the property that the polarization state of light settles down to a steady state.
- Fluctuations in the polarization state due to fluorite generally occur within several tens of seconds when laser light irradiation is stopped. I will restore it. Therefore, when the laser irradiation to the fluorite and the irradiation stop are repeated, the polarization state of the light passing through the fluorite changes every time the laser irradiation is started. If the incident linearly polarized light changes to elliptically polarized light through the light transmitting member made of fluorite, the quartz prism 20a will not function as a non-polarizing element in the above-mentioned polarization state switching means. Also, in the case of controlling the light amount by the sensor in the exposure apparatus, the fluctuation of the polarization state changes the ratio of the polarization component of the light incident on the sensor, which makes accurate light amount control difficult.
- FIG. 10 is a diagram illustrating the crystal orientation of fluorite.
- the crystal orientation of fluorite is defined based on the cubic crystal axis aaa. That is, the crystal axis +
- the crystal orientation [001] is defined along 1 2 3 respectively. In the a a plane, the crystal orientation [001] is defined along 1 2 3 respectively. In the a a plane, the crystal orientation [001] is defined along 1 2 3 respectively. In the a a plane, the crystal orientation [001] is defined along 1 2 3 respectively. In the a a plane, the crystal orientation [001] is defined along 1 2 3 respectively. In the a a plane, the crystal orientation [001] is defined along 1 2 3 respectively. In the a a plane, the crystal orientation [
- the crystal orientation [110] is at 45 degrees to the crystal orientation [100] and crystal orientation [010], and the direction is 45 degrees to the crystal orientation [010] and crystal orientation [001] in the aa plane.
- crystal orientation [011] is specified.
- the crystal orientation [11 1] is defined in a direction that forms an equal acute angle to the axis + a.
- the crystal orientation is similarly defined in the force s, which shows only the above, and in other spaces.
- a crystal orientation equivalent to a certain crystal orientation in terms of crystal structure refers to a crystal orientation obtained by changing the order of indices of the crystal orientation with respect to a certain crystal orientation.
- the crystal orientation [UVW] and the crystal orientation equivalent to the crystal orientation in terms of the crystal structure are referred to as the crystal orientation UVW>.
- the plane orthogonal to the crystal orientation [UVW] and the crystal orientation equivalent to the crystal orientation that is, the crystal plane (UVW) and the crystal plane equivalent to this in the crystal structure are referred to as the crystal plane ⁇ uvw ⁇ . .
- FIG. 14 is a diagram showing a state in which the polarization state of light changes when incident light of linearly polarized light passes through a birefringent medium.
- the X direction of the medium is the fast axis direction
- the y direction is the slow axis direction
- the oscillation direction of the electric field of the linearly polarized light of the incident light is the direction inclined by an angle ⁇ from the X axis to the y axis.
- the X component Ex and the y component Ey of the electric field represent the x component and the y component of the electric field amplitude as Ex and
- ⁇ is the frequency of light
- t is time
- ⁇ is the wavelength of light
- nx is the refractive index of the medium in the fast axis direction
- ny is the refractive index of the medium in the slow axis direction
- d is the optical path length in the medium.
- the medium for example, a light transmitting member made of fluorite
- the fast axis direction related to the birefringence fluctuation is set so that the oscillation direction of the electric field of the incident linearly polarized light is almost the same as or nearly perpendicular to the incident linearly polarized light
- the incident linearly polarized light component in the medium will be the fast axis component and the slow axis component.
- the incident linearly polarized light is emitted while maintaining the same linearly polarized state regardless of the change in birefringence without generating a phase difference between the fast axis component and the slow axis component. become.
- the birefringence variation of the light transmitting member when receiving light irradiation Check the direction of the fast axis.
- the polarization state of the birefringence fluctuation is set. The influence on the fluctuation can be minimized, and the fluctuation of the polarization state of the linearly polarized light incident on the light transmitting member can be suppressed as much as possible.
- FIG. 15 is a diagram corresponding to FIG. 10 and illustrating the crystal orientation of fluorite according to another expression method.
- Figure 16 shows the change in the birefringence variation of fluorite when the crystal orientation is changed between [001] and [110] and ArF excimer laser light is incident along the crystal orientation. It is a figure which shows typically.
- FIG. 17 shows the birefringence variation of fluorite when the crystal orientation is changed between [001] and [100] and ArF excimer laser light is incident along the crystal orientation. It is a figure which shows a change typically.
- FIG. 18 is a diagram corresponding to FIG. 16 and schematically shows a change in the birefringence variation of fluorite when the energy density of incident light is extremely high. It is. In FIG. 16 (b), FIG. 17 (b) and FIG. 18 (b), the horizontal axis indicates the crystal orientation at which ArF excimer laser light is incident, and the vertical axis indicates the birefringence variation.
- the second technique of the present invention relates to an illumination optical device that illuminates a surface to be irradiated with light through a light transmitting member formed of a cubic crystal material such as fluorite.
- the direction of travel of light in the light transmitting member is set to be closer to the crystal orientation 111> or the crystal orientation 100> than the crystal orientation 110>.
- the light traveling direction is the crystal orientation ⁇ 110>.
- the crystal orientation is set to be close to 111> or 100>.
- an optical member fixedly positioned in the optical path such as the lens components (2a, 2b) constituting the beam expander 2
- the optical axis of the optical member is The crystal orientation is set to approximately match 111> or 100>
- the entrance surface and the exit surface of the right-angle prism 33-38 are almost aligned with the crystal plane ⁇ 100 ⁇ . They are set so that they coincide with each other, and the reflection surface of the right-angle prism 3338 almost coincides with the crystal plane ⁇ 110 ⁇ .
- the side surfaces of the right-angle prisms 33-38 (strictly speaking, the plane extending between the optical axis of the incident surface and the optical axis of the exit surface) almost coincide with the crystal plane ⁇ 100 ⁇ .
- the polarization state of the linearly polarized light transmitted through the right-angle prisms 33 to 38 does not substantially change.
- one of the incident surface and the exit surface of the right-angle prism almost coincides with the crystal plane ⁇ 111 ⁇ , and the other plane almost coincides with the crystal plane ⁇ 211 ⁇ . It can also be set to do so.
- the side surface of the right-angle prism (strictly, the plane extending between the optical axis of the entrance surface and the optical axis of the exit surface) almost coincides with the crystal plane ⁇ 110 ⁇ .
- the optical axis (crystal orientation 211>) of the plane almost coincident with the crystal plane ⁇ 2 11 ⁇ is somewhat close to the crystal orientation 111>, the change in the polarization state of the linearly polarized light transmitted through the right-angle prism can be improved. It can hold down power.
- the reflection surface of the right-angle prism almost coincides with the crystal plane ⁇ 100 ⁇ , and the side surface of the right-angle prism (strictly speaking, the optical axis of the entrance surface and the optical axis of the exit surface are different from each other). It can also be set so that the plane that stretches between them substantially matches the crystal plane ⁇ 110 ⁇ .
- both the reflecting surface of the right-angle prism and the side surface of the right-angle prism (strictly, the plane extending between the optical axis of the incident surface and the optical axis of the exit surface) almost coincide with the crystal plane ⁇ 110 ⁇ . You can also set it to.
- the incident surface and the exit surface are set so as to substantially coincide with the crystal plane ⁇ 100 ⁇ . It is preferable that the incident plane and the exit plane are set so as to substantially coincide with the crystal plane ⁇ 111 ⁇ .
- one of the entrance surface and the exit surface of the prism is a crystal surface ⁇
- a parallel flat plate 32 is formed of fluorite as a beam translation means that is provided in the optical path so as to be tiltable with respect to the optical axis AX and translates light rays incident along the optical axis AX.
- the optical axis of the plane-parallel plate 32 is set so that it substantially matches the crystal orientation of 100>. This is because the crystal orientation ⁇ 111> and the crystal orientation 110> make an angle of about 35 degrees, while the crystal orientation 100> and the crystal orientation 110> make an angle of 45 degrees. That's why.
- This point is shown in Fig. 23 explaining the arrangement of each crystal orientation as viewed from the direction of the crystal orientation 100> and the arrangement of each crystal orientation as viewed from the direction of the crystal orientation 111>. This is apparent with reference to FIG.
- the parallel plane plate 32 Even if is tilted to the maximum with respect to the optical axis AX (for example, about 30 degrees), it is possible to secure a state where the traveling direction of the laser light passing therethrough is in a crystal orientation 110> force and a certain distance. As a result, the change in the polarization state of the linearly polarized light transmitted through the parallel plane plate 32 can be favorably suppressed regardless of the posture.
- the optical axis of the plane-parallel plate 32 is substantially aligned with the crystal orientation 111>, that is, when its optical surface is approximately aligned with the crystal plane ⁇ 111 ⁇ , as shown in FIG.
- the crystal orientation approaches 100> at about 55 degrees from 111>
- the crystal orientation approaches 111> at about 35 degrees from 110>.
- the crystal orientation is greatly inclined from one side (from the center to the upper right, the center to the upper left, or the center to the lower right in Fig. 24) along the direction from the crystal orientation 111> to the crystal orientation 100>.
- the beam translation means in order to translate the light beam in two axes, a first parallel flat plate that can be tilted around the first axis and a second axis that is substantially orthogonal to the first axis. It generally has a second parallel flat plate that can be tilted. In this case, it is preferable to apply the second method of the present invention (and, if necessary, the first method) to each parallel flat plate.
- the present invention is not limited to this, and the same applies to the light transmitting member disposed in the optical path between the polarization state switching means 42 and the mask M (and, consequently, the wafer W) as the surface to be irradiated. It is preferable to avoid the change in the polarization state of the linearly polarized light caused by the fluorite over the entire illumination optical path.
- the traveling direction of light is more crystallographic than 110>. It is set so that it is close to 111> or 100>.
- a light transmitting member formed of a cubic crystal material such as calcium fluoride, barium fluoride, and magnesium fluoride.
- a light transmitting member formed of a cubic crystal material is disclosed in, for example, US Patent Publication US2002 / 016 3741A (Are is WO02 / 16993). It may be held kinematically using the technique described. As a result, when the light transmitting member expands (shrinks) due to heat generated when light having a high energy density passes through the light transmitting member formed of a cubic crystal material such as fluorite. Even so, it is possible to suppress the occurrence of stress birefringence occurring in the light transmitting member, and it is possible to suppress the change in the polarization plane of the linearly polarized light transmitted through the light transmitting member.
- the beam matching unit BMU shown in FIG. 9 is provided with a plurality (in FIG. 9, for example, six) of right-angle prisms 3338.
- the laser light source 1 is a KrF excimer laser light source or an ArF excimer laser light source
- the plane of polarization of the incident linearly polarized light is a P-polarized surface.
- the linearly polarized light will be elliptically polarized due to total reflection by the right-angle prism. Turns into light.
- the polarization state switching means 42 of the present embodiment it is assumed that linearly polarized light is incident, and if elliptically polarized light is incident, a required action cannot be achieved.
- the crystal optical axis is centered on the optical axis AX. It is preferable that the rotatable quarter-wave plate 11 is attached to the light source side (left side in the figure) of the 1Z2 wave plate 10 in the polarization state switching means 42. In this case, for example, even if elliptically polarized light is incident on the polarization state switching means 42 due to the right-angle prism, the crystal optic axis of the 1Z4 wave plate 11 is set according to the characteristics of the elliptically polarized light to be incident.
- the linearly polarized light can be made incident on the half-wave plate 10 to maintain the original operation of the polarization state switching means 42.
- the 1Z4 wavelength plate 11 is disposed on the light source side of the 1/2 wavelength plate 10.
- the 1Z4 wavelength plate 11 is disposed on the mask side (right side in the figure) of the force 1/2 wavelength plate 10. I can do it.
- the mask (reticle) is illuminated by the illumination optical device (illumination step), and the transfer pattern formed on the mask is exposed on the photosensitive substrate using the projection optical system.
- a micro device semiconductor element, imaging element, liquid crystal display element, thin film magnetic head, etc.
- an example of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of the above-described embodiment will be described. This will be described with reference to FIG.
- a metal film is deposited on a wafer of one lot.
- a photoresist is applied on the metal film on the one lot wafer.
- the image of the pattern on the mask is passed through the projection optical system to each shot area on the wafer of the lot. Exposure transfer is sequentially performed on the area.
- the photoresist on the one lot of wafers is developed, and in step 305, etching is performed on the one lot of wafers using the resist pattern as a mask, thereby forming a pattern on the mask.
- a corresponding circuit pattern is formed in each shot area on each wafer.
- a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer and the like. According to the above-described semiconductor device manufacturing method, a semiconductor device having an extremely fine circuit pattern can be obtained with high throughput.
- a predetermined pattern is formed on a plate (glass substrate).
- a liquid crystal display element By forming (a circuit pattern, an electrode pattern, etc.), a liquid crystal display element as a micro device can be obtained.
- a so-called photolithography step of transferring and exposing a mask pattern onto a photosensitive substrate (a glass substrate coated with a resist) using the exposure apparatus of the above-described embodiment is executed.
- a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate.
- the exposed substrate goes through each process such as a developing process, an etching process, and a resist stripping process, so that a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming process 402.
- a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix, or R, G,
- a color filter is formed by arranging a plurality of sets of filters of three stripes B in the horizontal scanning line direction.
- a cell assembling step 403 is performed.
- a liquid crystal panel liquid crystal cell
- liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step 401 and the color filter obtained in the color filter forming step 402, Manufacture panels (liquid crystal cells). After that, in the module assembly process 404, the display operation of the assembled liquid crystal panel (liquid crystal cell) is performed. Each component such as an electric circuit and a backlight is attached to complete a liquid crystal display device. According to the above-described method for manufacturing a liquid crystal display element, a liquid crystal display element having an extremely fine circuit pattern can be obtained with a high throughput.
- the condenser optical system 9 collects the light from the secondary light source and illuminates the mask M in a superimposed manner.
- the illumination field stop mask blind
- the image of the illumination field stop are placed on the mask M. It is OK to arrange the relay optical system to be formed.
- the condenser optical system 9 condenses the light from the secondary light source and illuminates the illumination field stop in a superimposed manner, and the relay optical system uses the light from the aperture (light transmission part) of the illumination field stop. An image will be formed on the mask M.
- a technique of filling the optical path between the projection optical system and the photosensitive substrate with a medium (typically, a liquid) having a refractive index greater than 1.1 that is, a so-called liquid immersion method.
- a method of filling the liquid in the optical path between the projection optical system and the photosensitive substrate a method of locally filling the liquid as disclosed in International Publication No. WO99 / 49504, Japanese Patent Application Laid-Open No. 6-124873 discloses a technique for moving a stage holding a substrate to be exposed in a liquid tank, and a method for moving a stage on a stage as disclosed in Japanese Patent Application Laid-Open No. 10-303114.
- a method of forming a liquid tank having a predetermined depth and holding the substrate therein can be employed.
- the liquid it is preferable to use a liquid that is transparent to the projection optical system or the photoresist applied to the substrate surface, which has transparency to the exposure light and has a refractive index as high as possible.
- a liquid that is transparent to the projection optical system or the photoresist applied to the substrate surface which has transparency to the exposure light and has a refractive index as high as possible.
- KrF excimer laser light or ArF excimer laser light is used as the exposure light
- pure water or deionized water can be used as the liquid.
- PFPE fluorine-based liquid
- PFPE fluorine-based perfluoropolyether
- the power using KrF excimer laser light (wavelength: 248 nm) or ArF excimer laser light (wavelength: 193 nm) as the exposure light is not limited to this, and may be other suitable light.
- a laser light source such as an F laser light source that supplies laser light with a wavelength of 157 nm, or a light source other than a laser light source, such as ultraviolet light such as i-line, g-line, or h-line
- the present invention can be applied to a light source. Further, in the above-described embodiment, the present invention has been described by taking the projection exposure apparatus having the illumination optical apparatus as an example. However, the present invention is applied to a general illumination optical apparatus for illuminating an illuminated surface other than a mask. It is clear that it can be applied.
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Abstract
Description
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EP04746597A EP1662553A1 (en) | 2003-07-24 | 2004-06-29 | Illuminating optical system, exposure system and exposure method |
US10/565,412 US20060171138A1 (en) | 2003-07-24 | 2004-06-29 | Illuminating optical system, exposure system and exposure method |
JP2005511988A JPWO2005010963A1 (ja) | 2003-07-24 | 2004-06-29 | 照明光学装置、露光装置および露光方法 |
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US (1) | US20060171138A1 (ja) |
EP (1) | EP1662553A1 (ja) |
JP (1) | JPWO2005010963A1 (ja) |
KR (1) | KR20060039925A (ja) |
WO (1) | WO2005010963A1 (ja) |
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JP2006278979A (ja) * | 2005-03-30 | 2006-10-12 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
JP2007036080A (ja) * | 2005-07-29 | 2007-02-08 | Mitsubishi Electric Corp | レーザアニール装置 |
JP2008116940A (ja) * | 2006-10-23 | 2008-05-22 | Schott Ag | 光の結晶透過中に起こる直線偏光の解消を防止するための配置及び方法 |
JP2009244881A (ja) * | 2008-03-28 | 2009-10-22 | Nikon Corp | 光学部材、光引き回しユニット及び露光装置 |
JP2010050299A (ja) * | 2008-08-22 | 2010-03-04 | Gigaphoton Inc | 偏光純度制御装置及びそれを備えたガスレーザ装置 |
JP2011508409A (ja) * | 2007-11-20 | 2011-03-10 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学系 |
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EP3226073A3 (en) | 2003-04-09 | 2017-10-11 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device |
TW201834020A (zh) * | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
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JP4971932B2 (ja) * | 2007-10-01 | 2012-07-11 | キヤノン株式会社 | 照明光学系、露光装置、デバイス製造方法および偏光制御ユニット |
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- 2004-06-29 WO PCT/JP2004/009128 patent/WO2005010963A1/ja not_active Application Discontinuation
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Cited By (9)
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JP2006278979A (ja) * | 2005-03-30 | 2006-10-12 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
JP4591155B2 (ja) * | 2005-03-30 | 2010-12-01 | 株式会社ニコン | 露光方法及び装置、並びにデバイス製造方法 |
JP2007036080A (ja) * | 2005-07-29 | 2007-02-08 | Mitsubishi Electric Corp | レーザアニール装置 |
JP2008116940A (ja) * | 2006-10-23 | 2008-05-22 | Schott Ag | 光の結晶透過中に起こる直線偏光の解消を防止するための配置及び方法 |
JP2011508409A (ja) * | 2007-11-20 | 2011-03-10 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学系 |
US8379188B2 (en) | 2007-11-20 | 2013-02-19 | Carl Zeiss Smt Gmbh | Optical system |
JP2009244881A (ja) * | 2008-03-28 | 2009-10-22 | Nikon Corp | 光学部材、光引き回しユニット及び露光装置 |
JP2010050299A (ja) * | 2008-08-22 | 2010-03-04 | Gigaphoton Inc | 偏光純度制御装置及びそれを備えたガスレーザ装置 |
US11099468B2 (en) | 2018-08-29 | 2021-08-24 | Panasonic Intellectual Property Management Co., Ltd. | Light source device and projection display apparatus |
Also Published As
Publication number | Publication date |
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KR20060039925A (ko) | 2006-05-09 |
US20060171138A1 (en) | 2006-08-03 |
JPWO2005010963A1 (ja) | 2007-09-27 |
EP1662553A1 (en) | 2006-05-31 |
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