WO2004089812A1 - マイクロマシンの製造方法 - Google Patents
マイクロマシンの製造方法 Download PDFInfo
- Publication number
- WO2004089812A1 WO2004089812A1 PCT/JP2004/004822 JP2004004822W WO2004089812A1 WO 2004089812 A1 WO2004089812 A1 WO 2004089812A1 JP 2004004822 W JP2004004822 W JP 2004004822W WO 2004089812 A1 WO2004089812 A1 WO 2004089812A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- vibrator
- mems
- manufacturing
- sacrifice layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000005530 etching Methods 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims description 32
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 abstract description 14
- 238000012536 packaging technology Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 69
- 239000004065 semiconductor Substances 0.000 description 17
- 238000012545 processing Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000006854 communication Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0012—Protection against reverse engineering, unauthorised use, use in unintended manner, wrong insertion or pin assignment
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
Definitions
- a film formation process under reduced pressure which is the most characteristic step in this embodiment, is performed.
- a film forming process is performed by sputtering in a vacuum to form a sputtering film 9 for sealing the through-hole 10 as shown in FIG. 3D.
- argon (Ar) gas which is an inert gas, is used because the film is formed by sputtering.
- the sputtered film 9 include a thin film made of a metal or a metal compound, such as an Al—Cu film and an A 1—Si film.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020057018242A KR101127167B1 (ko) | 2003-04-02 | 2004-04-02 | 마이크로머신의 제조방법 |
US10/551,271 US8268660B2 (en) | 2003-04-02 | 2004-04-02 | Process for fabricating micromachine |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003098782 | 2003-04-02 | ||
JP2003-098782 | 2003-04-02 | ||
JP2004068325A JP4333417B2 (ja) | 2003-04-02 | 2004-03-11 | マイクロマシンの製造方法 |
JP2004-068325 | 2004-03-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004089812A1 true WO2004089812A1 (ja) | 2004-10-21 |
Family
ID=33161486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/004822 WO2004089812A1 (ja) | 2003-04-02 | 2004-04-02 | マイクロマシンの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8268660B2 (ja) |
JP (1) | JP4333417B2 (ja) |
KR (1) | KR101127167B1 (ja) |
TW (1) | TWI245020B (ja) |
WO (1) | WO2004089812A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007222956A (ja) * | 2006-02-21 | 2007-09-06 | Seiko Epson Corp | Memsデバイスおよびmemsデバイスの製造方法 |
JP2008188711A (ja) * | 2007-02-05 | 2008-08-21 | Oki Electric Ind Co Ltd | 半導体装置製造方法 |
TW200938479A (en) * | 2007-10-22 | 2009-09-16 | Toshiba Kk | Micromachine device and method of manufacturing the same |
JP2010280035A (ja) | 2009-06-04 | 2010-12-16 | Toshiba Corp | Memsデバイスとその製造方法 |
US8569091B2 (en) | 2009-08-27 | 2013-10-29 | International Business Machines Corporation | Integrated circuit switches, design structure and methods of fabricating the same |
DE102010000666A1 (de) * | 2010-01-05 | 2011-07-07 | Robert Bosch GmbH, 70469 | Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zu dessen Herstellung |
JP5485714B2 (ja) * | 2010-01-07 | 2014-05-07 | セイコーインスツル株式会社 | パッケージの製造方法 |
US20130106875A1 (en) * | 2011-11-02 | 2013-05-02 | Qualcomm Mems Technologies, Inc. | Method of improving thin-film encapsulation for an electromechanical systems assembly |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0646207A (ja) * | 1992-01-14 | 1994-02-18 | Matsushita Electric Ind Co Ltd | 圧電駆動マイクロスキャナ |
JPH07131280A (ja) * | 1993-10-28 | 1995-05-19 | Toyota Motor Corp | 振動子の支持構造 |
JPH09148467A (ja) * | 1995-11-24 | 1997-06-06 | Murata Mfg Co Ltd | 動作素子の真空封止の構造およびその製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4262399A (en) * | 1978-11-08 | 1981-04-21 | General Electric Co. | Ultrasonic transducer fabricated as an integral park of a monolithic integrated circuit |
JPH0750789B2 (ja) * | 1986-07-18 | 1995-05-31 | 日産自動車株式会社 | 半導体圧力変換装置の製造方法 |
US5198716A (en) * | 1991-12-09 | 1993-03-30 | The United States Of America As Represented By The United States Department Of Energy | Micro-machined resonator |
AU5869994A (en) * | 1992-12-11 | 1994-07-04 | Regents Of The University Of California, The | Microelectromechanical signal processors |
DE19844686A1 (de) * | 1998-09-29 | 2000-04-06 | Fraunhofer Ges Forschung | Mikromechanischer Drehratensensor und Verfahren zur Herstellung |
US6704185B2 (en) * | 2000-02-23 | 2004-03-09 | National Center For Scientific Research | Capacitive pressure-responsive devices and their fabrication |
US7008812B1 (en) * | 2000-05-30 | 2006-03-07 | Ic Mechanics, Inc. | Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation |
US6448604B1 (en) * | 2000-09-12 | 2002-09-10 | Robert Bosch Gmbh | Integrated adjustable capacitor |
WO2002073673A1 (en) * | 2001-03-13 | 2002-09-19 | Rochester Institute Of Technology | A micro-electro-mechanical switch and a method of using and making thereof |
US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
US6621134B1 (en) * | 2002-02-07 | 2003-09-16 | Shayne Zurn | Vacuum sealed RF/microwave microresonator |
US6635509B1 (en) * | 2002-04-12 | 2003-10-21 | Dalsa Semiconductor Inc. | Wafer-level MEMS packaging |
JP3731750B2 (ja) | 2002-06-24 | 2006-01-05 | 松下電器産業株式会社 | 赤外線センサの製造方法 |
JP3703480B2 (ja) | 2002-12-27 | 2005-10-05 | 松下電器産業株式会社 | 電子デバイスおよびその製造方法 |
-
2004
- 2004-03-11 JP JP2004068325A patent/JP4333417B2/ja not_active Expired - Fee Related
- 2004-04-02 KR KR1020057018242A patent/KR101127167B1/ko active IP Right Grant
- 2004-04-02 US US10/551,271 patent/US8268660B2/en not_active Expired - Fee Related
- 2004-04-02 WO PCT/JP2004/004822 patent/WO2004089812A1/ja active Application Filing
- 2004-04-02 TW TW093109159A patent/TWI245020B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0646207A (ja) * | 1992-01-14 | 1994-02-18 | Matsushita Electric Ind Co Ltd | 圧電駆動マイクロスキャナ |
JPH07131280A (ja) * | 1993-10-28 | 1995-05-19 | Toyota Motor Corp | 振動子の支持構造 |
JPH09148467A (ja) * | 1995-11-24 | 1997-06-06 | Murata Mfg Co Ltd | 動作素子の真空封止の構造およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101127167B1 (ko) | 2012-03-21 |
US8268660B2 (en) | 2012-09-18 |
US20060216847A1 (en) | 2006-09-28 |
TWI245020B (en) | 2005-12-11 |
JP2004314289A (ja) | 2004-11-11 |
TW200510241A (en) | 2005-03-16 |
JP4333417B2 (ja) | 2009-09-16 |
KR20050119154A (ko) | 2005-12-20 |
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