WO2004078410A3 - Agent for increasing selection ratio of polishing rates - Google Patents
Agent for increasing selection ratio of polishing rates Download PDFInfo
- Publication number
- WO2004078410A3 WO2004078410A3 PCT/JP2004/002680 JP2004002680W WO2004078410A3 WO 2004078410 A3 WO2004078410 A3 WO 2004078410A3 JP 2004002680 W JP2004002680 W JP 2004002680W WO 2004078410 A3 WO2004078410 A3 WO 2004078410A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- agent
- ratio
- rate
- selection ratio
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 19
- 239000003795 chemical substances by application Substances 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000006061 abrasive grain Substances 0.000 abstract 3
- 239000011347 resin Substances 0.000 abstract 3
- 229920005989 resin Polymers 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 150000001767 cationic compounds Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dispersion Chemistry (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
An agent for increasing a selection ratio of polishing rates, wherein the agent comprises an organic cationic compound, which increases a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, wherein the agent is provided as a component of a polishing composition used together with a fixed abrasive polishing tool comprising a polishing member comprising abrasive grains and a resin; a polishing composition which increases a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, wherein the polishing composition comprises the above agent, and wherein the polishing composition is used together with a fixed abrasive polishing tool comprising a polishing member comprising abrasive grains and a resin; and a process for increasing a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, comprising the step of applying the polishing composition to a fixed abrasive polishing tool comprising a polishing member comprising abrasive grains and a resin.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003058791A JP2004273547A (en) | 2003-03-05 | 2003-03-05 | Polishing rate selectivity enhancer |
JP2003-58791 | 2003-03-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004078410A2 WO2004078410A2 (en) | 2004-09-16 |
WO2004078410A3 true WO2004078410A3 (en) | 2004-11-04 |
Family
ID=32958805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/002680 WO2004078410A2 (en) | 2003-03-05 | 2004-03-03 | Agent for increasing selection ratio of polishing rates |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2004273547A (en) |
WO (1) | WO2004078410A2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8025808B2 (en) | 2003-04-25 | 2011-09-27 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machine ceramics |
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
JP2006318952A (en) * | 2005-05-10 | 2006-11-24 | Hitachi Chem Co Ltd | Cmp abrasive and method of polishing substrate |
JP2006339594A (en) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | Abrasive agent for semiconductor |
CA2672146C (en) * | 2006-12-20 | 2012-08-21 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machining inorganic, non-metallic workpieces |
KR101396853B1 (en) | 2007-07-06 | 2014-05-20 | 삼성전자주식회사 | Slurry Composition for Polishing Silicon Nitride, Method of Polishing a Silicon Nitride Layer Using the Slurry Composition and Method of Manufacturing a Semiconductor Device Using the Slurry Composition |
US8017524B2 (en) | 2008-05-23 | 2011-09-13 | Cabot Microelectronics Corporation | Stable, high rate silicon slurry |
WO2016132951A1 (en) * | 2015-02-19 | 2016-08-25 | 株式会社フジミインコーポレーテッド | Polishing composition |
WO2016132952A1 (en) * | 2015-02-20 | 2016-08-25 | 株式会社フジミインコーポレーテッド | Polishing composition |
JP5843036B1 (en) | 2015-06-23 | 2016-01-13 | コニカミノルタ株式会社 | Method for preparing recycled abrasive slurry |
US11458590B2 (en) | 2015-12-09 | 2022-10-04 | Konica Minolta, Inc. | Abrasive slurry regeneration method |
JP2019059842A (en) * | 2017-09-26 | 2019-04-18 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing polishing composition, polishing method and method for producing semiconductor substrate |
JP7425660B2 (en) | 2020-04-07 | 2024-01-31 | 花王株式会社 | Polishing liquid composition for silicon oxide film |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
EP1050369A2 (en) * | 1999-04-29 | 2000-11-08 | Ebara Corporation | Method and apparatus for polishing workpieces |
WO2001004231A1 (en) * | 1999-07-13 | 2001-01-18 | Kao Corporation | Polishing liquid composition |
EP1077241A2 (en) * | 1999-08-17 | 2001-02-21 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Composition for use in a chemical-mechanical planarization process |
WO2001012740A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system and method of its use |
EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
US6358850B1 (en) * | 1999-12-23 | 2002-03-19 | International Business Machines Corporation | Slurry-less chemical-mechanical polishing of oxide materials |
US20020081949A1 (en) * | 2000-10-23 | 2002-06-27 | Hiroyuki Yoshida | Polishing composition |
US20020173221A1 (en) * | 2001-03-14 | 2002-11-21 | Applied Materials, Inc. | Method and apparatus for two-step polishing |
-
2003
- 2003-03-05 JP JP2003058791A patent/JP2004273547A/en active Pending
-
2004
- 2004-03-03 WO PCT/JP2004/002680 patent/WO2004078410A2/en active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
EP1050369A2 (en) * | 1999-04-29 | 2000-11-08 | Ebara Corporation | Method and apparatus for polishing workpieces |
WO2001004231A1 (en) * | 1999-07-13 | 2001-01-18 | Kao Corporation | Polishing liquid composition |
WO2001012740A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system and method of its use |
EP1077241A2 (en) * | 1999-08-17 | 2001-02-21 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Composition for use in a chemical-mechanical planarization process |
EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
US6358850B1 (en) * | 1999-12-23 | 2002-03-19 | International Business Machines Corporation | Slurry-less chemical-mechanical polishing of oxide materials |
US20020081949A1 (en) * | 2000-10-23 | 2002-06-27 | Hiroyuki Yoshida | Polishing composition |
US20020173221A1 (en) * | 2001-03-14 | 2002-11-21 | Applied Materials, Inc. | Method and apparatus for two-step polishing |
Also Published As
Publication number | Publication date |
---|---|
JP2004273547A (en) | 2004-09-30 |
WO2004078410A2 (en) | 2004-09-16 |
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