WO2004052785B1 - High purity nickel/vanadium sputtering components; and methods of making sputtering components - Google Patents

High purity nickel/vanadium sputtering components; and methods of making sputtering components

Info

Publication number
WO2004052785B1
WO2004052785B1 PCT/US2003/037463 US0337463W WO2004052785B1 WO 2004052785 B1 WO2004052785 B1 WO 2004052785B1 US 0337463 W US0337463 W US 0337463W WO 2004052785 B1 WO2004052785 B1 WO 2004052785B1
Authority
WO
WIPO (PCT)
Prior art keywords
vanadium
nickel
canceled
weight
pure
Prior art date
Application number
PCT/US2003/037463
Other languages
French (fr)
Other versions
WO2004052785A3 (en
WO2004052785A2 (en
Inventor
Wei Guo
Stephen P Turner
Edward F Cawley
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to EP03783754A priority Critical patent/EP1579019A2/en
Priority to AU2003291159A priority patent/AU2003291159A1/en
Priority to JP2004559157A priority patent/JP2006509109A/en
Publication of WO2004052785A2 publication Critical patent/WO2004052785A2/en
Publication of WO2004052785A3 publication Critical patent/WO2004052785A3/en
Publication of WO2004052785B1 publication Critical patent/WO2004052785B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

The invention includes sputtering components, such as sputtering targets, comprising high-purity Ni-V. The sputtering components can have a fine average grain size throughout, with an exemplary fine average grain size being a grain size less than or equal to 40 microns. The invention also includes methods of making high-purity Ni-V structures.

Claims

AMENDED CLAIMS [received by the International Bureau on 30 May 2005 (30.05.05); original claims 1-39 replaced by amended claims 1-39 (3 pages)]The invention claimed is:
1. A nickel-vanadium sputtering component structure comprising at least 99.99 weight%, excluding gases, nickel and vanadium; and having an average grain size throughout the structure of less than or equal to about 40 microns.
2. The sputtering component structure of claim 1 being at least 99.995 weight%, excluding gases, nickel and vanadium.
3. The sputtering component structure of claim 1 being at least 99.999 weight%, excluding gases, nickel and vanadium.
4. Canceled.
5. Canceled.
6. Canceled.
7. Canceled.
8. Canceled.
9. Canceled.
10. The nickel/vanadium sputtering component of claim 1 , 2 or 3 wherein the average grain size is less than or equal to about 30 microns.
11. The nickel/vanadium sputtering component of claim 1 , 2 or 3 wherein the average grain size is less than or equal to about 20 microns.
12. The nickel/vanadium sputtering component of claim 1 , 2 or 3 comprising from about 4 weight percent vanadium to about 10 weight percent vanadium.
13. Canceled.
14. Canceled.
15. Canceled. 15
16. Canceled.
17. Canceled.
18. Canceled.
19. Canceled.
20. Canceled.
21. Canceled.
22. Canceled.
23. Canceled.
24. A method for producing the nickel/vanadium sputtering component structure of claim 1 , comprising: providing a nickel material which is at least 99.99 weight%, excluding gases, pure in nickel; providing a vanadium material which is at least 99.99 weight%, excluding gases, pure in vanadium; melting the nickel and vanadium materials together form a molten nickel/vanadium alloy from the nickel and vanadium materials; cooling the nickel/vanadium alloy to form a nickel/vanadium structure, the nickel/vanadium structure being at least 99.99 weight%, excluding gases, pure in nickel and vanadium, the nickel/vanadium structure comprising from about 4 weight percent vanadium to about 10 weight percent vanadium; and the nickel/vanadium structure comprising an average grain size throughout the structure of greater than 40 microns; and subjecting the nickel/vanadium structure to thermo-mechanical processing to reduce the average grain size to less than or equal to 40 microns.
25. Canceled.
26. Canceled.
27. Canceled. 16
28. The method of claim 24 wherein the nickel material is at least 99.995 weight.%, excluding gases, pure in nickel; wherein the vanadium material is at least 99.995 weight%, excluding gases, pure in vanadium; and wherein the nickel/vanadium structure is at least 99.995%, excluding gases, pure in nickel and vanadium.
29. Canceled.
30. The method of claim 24 wherein the nickel material is at least 99.999 weight%, excluding gases, pure in nickel; wherein the vanadium material is at least 99.999 weight%, excluding gases, pure in vanadium; and wherein the nickel/vanadium structure is at least 99.999%, excluding gases, pure in nickel and vanadium.
31. Canceled.
32. Canceled.
33. Canceled.
34. The method of claim 24 wherein the thermo-mechanical processing produces an average grain size throughout the structure of less than or equal to 30 microns.
35. Canceled.
36. Canceled.
37. The method of claim 24 wherein the thermo-mechanical processing produces an average grain size throughout the structure of less than or equal to 20 microns.
38. Canceled.
39. Canceled.
PCT/US2003/037463 2002-12-09 2003-11-24 High purity nickel/vanadium sputtering components; and methods of making sputtering components WO2004052785A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03783754A EP1579019A2 (en) 2002-12-09 2003-11-24 High purity nickel/vanadium sputtering components; and methods of making sputtering components
AU2003291159A AU2003291159A1 (en) 2002-12-09 2003-11-24 High purity nickel/vanadium sputtering components; and methods of making sputtering components
JP2004559157A JP2006509109A (en) 2002-12-09 2003-11-24 High purity nickel / vanadium sputtering component; and method of manufacturing the sputtering component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43216602P 2002-12-09 2002-12-09
US60/432,166 2002-12-09

Publications (3)

Publication Number Publication Date
WO2004052785A2 WO2004052785A2 (en) 2004-06-24
WO2004052785A3 WO2004052785A3 (en) 2005-06-16
WO2004052785B1 true WO2004052785B1 (en) 2005-07-21

Family

ID=32507860

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/037463 WO2004052785A2 (en) 2002-12-09 2003-11-24 High purity nickel/vanadium sputtering components; and methods of making sputtering components

Country Status (8)

Country Link
US (2) US20040108028A1 (en)
EP (1) EP1579019A2 (en)
JP (1) JP2006509109A (en)
KR (1) KR20050085232A (en)
CN (1) CN1723292A (en)
AU (1) AU2003291159A1 (en)
TW (1) TW200418996A (en)
WO (1) WO2004052785A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2213763A3 (en) * 2003-08-11 2010-08-18 Honeywell International Inc. Target/backing plate constructions, and methods of forming target/backing plate constructions
WO2005035809A1 (en) * 2003-10-07 2005-04-21 Nikko Materials Co., Ltd. HIGH-PURITY Ni-V ALLOY, TARGET THEREFROM, HIGH-PURITY Ni-V ALLOY THIN FILM AND PROCESS FOR PRODUCING HIGH-PURITY Ni-V ALLOY
US7832619B2 (en) * 2004-02-27 2010-11-16 Howmet Corporation Method of making sputtering target
US20050249981A1 (en) * 2004-05-10 2005-11-10 Heraeus, Inc. Grain structure for magnetic recording media
US20050277002A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
US20050274221A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
US20060042938A1 (en) * 2004-09-01 2006-03-02 Heraeus, Inc. Sputter target material for improved magnetic layer
US20060078457A1 (en) * 2004-10-12 2006-04-13 Heraeus, Inc. Low oxygen content alloy compositions
US20060110626A1 (en) * 2004-11-24 2006-05-25 Heraeus, Inc. Carbon containing sputter target alloy compositions
US20060286414A1 (en) * 2005-06-15 2006-12-21 Heraeus, Inc. Enhanced oxide-containing sputter target alloy compositions
US7837929B2 (en) * 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
US20070253103A1 (en) * 2006-04-27 2007-11-01 Heraeus, Inc. Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target
CN101660123B (en) * 2008-08-28 2013-08-14 长沙天鹰金属材料有限公司 Nickel-based target and production process
US8449818B2 (en) 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
US8449817B2 (en) 2010-06-30 2013-05-28 H.C. Stark, Inc. Molybdenum-containing targets comprising three metal elements
EP2707520B1 (en) 2011-05-10 2018-05-02 H.C. STARCK, Inc. Composite target
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
US9903212B2 (en) * 2013-07-30 2018-02-27 Siemens Aktiengesellschaft Mechanical joining using additive manufacturing process
CN104014767B (en) * 2014-06-05 2016-05-04 贵研铂业股份有限公司 A kind of method of preparing NiV alloy target material
CN106290425A (en) * 2016-07-13 2017-01-04 东莞中子科学中心 A kind of vanadium nickel alloy for preparing neutron scattering experiment sample box and application thereof
CN110468382B (en) * 2019-09-12 2021-04-09 南京达迈科技实业有限公司 Large-diameter Ni-V rotary target containing trace elements and preparation method thereof
CN111549324A (en) * 2020-06-17 2020-08-18 宁波江丰电子材料股份有限公司 NiV alloy target material and forming method and application thereof
CN112899627B (en) * 2021-01-16 2022-09-27 重庆电子工程职业学院 Target mounting structure, magnetron sputtering equipment and magnetron sputtering method
CN114318255B (en) * 2021-12-09 2022-09-16 贵研铂业股份有限公司 High-density NiV alloy sputtering target material prepared by easily-oxidized metal coating protection and preparation method thereof

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US2876180A (en) * 1953-12-14 1959-03-03 Horizons Titanium Corp Fused salt bath for the electrodeposition of transition metals
US3294481A (en) * 1962-12-05 1966-12-27 Burwell Blair Process for recovering pure vanadium oxide from low grade vanadium ores or concentrates
US3320024A (en) * 1963-07-05 1967-05-16 Burwell Blair Process of recovering high purity vanadium compositions
US4552820A (en) * 1984-04-25 1985-11-12 Lin Data Corporation Disc media
US4610720A (en) * 1984-05-16 1986-09-09 The United States Of America As Represented By The Department Of Energy Method for preparing high purity vanadium
US4895592A (en) * 1987-12-14 1990-01-23 Eastman Kodak Company High purity sputtering target material and method for preparing high purity sputtering target materials
US6341114B1 (en) * 1999-03-23 2002-01-22 Michael Anh Nguyen Universal loader platform for optical storage device
US6342114B1 (en) * 1999-03-31 2002-01-29 Praxair S.T. Technology, Inc. Nickel/vanadium sputtering target with ultra-low alpha emission
US6827828B2 (en) * 2001-03-29 2004-12-07 Honeywell International Inc. Mixed metal materials

Also Published As

Publication number Publication date
US20050230013A1 (en) 2005-10-20
WO2004052785A3 (en) 2005-06-16
AU2003291159A8 (en) 2004-06-30
TW200418996A (en) 2004-10-01
KR20050085232A (en) 2005-08-29
WO2004052785A2 (en) 2004-06-24
US20040108028A1 (en) 2004-06-10
CN1723292A (en) 2006-01-18
EP1579019A2 (en) 2005-09-28
AU2003291159A1 (en) 2004-06-30
JP2006509109A (en) 2006-03-16

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