WO2004044994A3 - Monolithisch integrierte vertikale pin-fotodiode in bicmos-technologie - Google Patents

Monolithisch integrierte vertikale pin-fotodiode in bicmos-technologie Download PDF

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Publication number
WO2004044994A3
WO2004044994A3 PCT/DE2003/003739 DE0303739W WO2004044994A3 WO 2004044994 A3 WO2004044994 A3 WO 2004044994A3 DE 0303739 W DE0303739 W DE 0303739W WO 2004044994 A3 WO2004044994 A3 WO 2004044994A3
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WO
WIPO (PCT)
Prior art keywords
pin photodiode
monolithically integrated
bicmos technology
vertical pin
epitaxial layer
Prior art date
Application number
PCT/DE2003/003739
Other languages
English (en)
French (fr)
Other versions
WO2004044994A9 (de
WO2004044994A2 (de
Inventor
Wolfgang Einbrodt
Horst Zimmermann
Michael Foertsch
Original Assignee
X Fab Semiconductor Foundries
Wolfgang Einbrodt
Horst Zimmermann
Michael Foertsch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries, Wolfgang Einbrodt, Horst Zimmermann, Michael Foertsch filed Critical X Fab Semiconductor Foundries
Priority to AU2003291934A priority Critical patent/AU2003291934A1/en
Priority to EP03767422A priority patent/EP1561245A2/de
Priority to US10/534,304 priority patent/US7535074B2/en
Priority to DE10394078T priority patent/DE10394078D2/de
Publication of WO2004044994A2 publication Critical patent/WO2004044994A2/de
Publication of WO2004044994A9 publication Critical patent/WO2004044994A9/de
Publication of WO2004044994A3 publication Critical patent/WO2004044994A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Die Erfindung betrift eine monolithisch integrierte vertikale pin-Fotodiode, hergestellt in BiCMOS-Technologie, mit einer planaren, zum Licht (h⋅ν) gewandten Oberfläche (30) und einer Rückseite (31) und mit Anodenanschlüssen (A1, A2) über p-Gebiete (20, 21) auf einer Oberseite der Fotodiode wobei eine i-Zone der pin-Fotodiode gebildet wird durch Kombination einer niedrig dotierten, bis maximal im wesentlichen 15µm dicken ersten p--Epitaxieschicht (10,d10) mit einer Dotierungskonzentration unter 5*1014 cm-3, die sich auf einem - insbesonderem hoch-dotierten - p-Substrat (10) befindet, mit einer an die erste Schicht (10) angrenzenden, niedrig dotierten zweiten n--Epitaxieschicht (9) mit einer Dotierung in einem Bereich von im wesentlichen 1014 cm-3 bis 1015 cm-3, in welche zweite Schicht (9) eine n+-Kathode (K) der pin-Fotodiode eingebracht ist und wobei in einer lateralen Richtung p-Gebiete (20, 21) die zweite n-Epitaxieschicht (9) begrenzen und zusätzlich zu den Anodenanschlüssen (A1, A2) ein weiterer Anodenanschlussbereich (A3) der pin-Diode auf der Rückseite (31) vorhanden ist.
PCT/DE2003/003739 2002-11-12 2003-11-12 Monolithisch integrierte vertikale pin-fotodiode in bicmos-technologie WO2004044994A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2003291934A AU2003291934A1 (en) 2002-11-12 2003-11-12 Monolithically integrated vertical pin photodiode used in bicmos technology
EP03767422A EP1561245A2 (de) 2002-11-12 2003-11-12 Monolithisch integrierte vertikale pin-fotodiode in bicmos-technologie
US10/534,304 US7535074B2 (en) 2002-11-12 2003-11-12 Monolithically integrated vertical pin photodiode used in biCMOS technology
DE10394078T DE10394078D2 (de) 2002-11-12 2003-11-12 Monolithisch integrierte vertikale PIN-Fotodiode in BICMOS-Technologie

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10252878.0 2002-11-12
DE10252878A DE10252878A1 (de) 2002-11-12 2002-11-12 In BiCMOS-Technologie monolithisch integrierte verbesserte vertikale pin-Fotodiode

Publications (3)

Publication Number Publication Date
WO2004044994A2 WO2004044994A2 (de) 2004-05-27
WO2004044994A9 WO2004044994A9 (de) 2004-07-22
WO2004044994A3 true WO2004044994A3 (de) 2005-04-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/003739 WO2004044994A2 (de) 2002-11-12 2003-11-12 Monolithisch integrierte vertikale pin-fotodiode in bicmos-technologie

Country Status (5)

Country Link
US (1) US7535074B2 (de)
EP (1) EP1561245A2 (de)
AU (1) AU2003291934A1 (de)
DE (2) DE10252878A1 (de)
WO (1) WO2004044994A2 (de)

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KR100630679B1 (ko) * 2003-12-17 2006-10-02 삼성전자주식회사 포토 다이오드 및 이의 제조 방법
DE102004053077B4 (de) * 2004-11-03 2006-11-02 X-Fab Semiconductor Foundries Ag Vertikale PIN-Fotodiode und Verfahren zur Herstellung, kompatibel zu einem konventionellen CMOS-Prozess
JP2006339533A (ja) * 2005-06-03 2006-12-14 Sanyo Electric Co Ltd 半導体装置
US8294232B2 (en) * 2009-01-15 2012-10-23 Raytheon Company High quantum efficiency optical detectors
US8298887B2 (en) * 2009-12-03 2012-10-30 Applied Materials, Inc. High mobility monolithic p-i-n diodes
WO2013040785A1 (zh) * 2011-09-23 2013-03-28 上海凯世通半导体有限公司 掺杂方法、pn结构、太阳能电池的制作方法及太阳能电池
CN103094313B (zh) * 2011-11-01 2016-08-17 上海华虹宏力半导体制造有限公司 一种bicmos工艺中的寄生n-i-p型pin器件结构及其制造方法
CN103107186B (zh) * 2011-11-11 2016-06-08 上海华虹宏力半导体制造有限公司 一种BiCMOS工艺中寄生N-I-P型PIN器件结构及其制造方法
CN103123931B (zh) * 2011-11-21 2016-04-13 上海华虹宏力半导体制造有限公司 一种BiCMOS工艺中寄生N-I-P型PIN器件结构及其制造方法
US11662818B2 (en) 2012-08-31 2023-05-30 Blue Goji Llc. System and method for evaluation, detection, conditioning, and treatment of neurological functioning and conditions
CN104538374B (zh) * 2015-01-08 2017-10-20 四川矽芯微科技有限公司 芯片尺寸封装的pin二极管及其制作方法
IT201800004149A1 (it) * 2018-03-30 2019-09-30 St Microelectronics Srl Fotorivelatore di luce ultravioletta di carburo di silicio e suo processo di fabbricazione
CN112673275B (zh) * 2018-09-10 2024-03-15 Pmd技术股份公司 光传播时间像素及具有对应的像素的光传播时间传感器
DE102019107895A1 (de) * 2019-03-27 2020-10-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Photodiode und Ausleseschaltung für Photodiode

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US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
JPS63174358A (ja) * 1987-01-14 1988-07-18 Hitachi Ltd 固体撮像素子
JPH09148617A (ja) * 1995-11-27 1997-06-06 Sanyo Electric Co Ltd 光半導体装置

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US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
JP3280321B2 (ja) * 1998-09-14 2002-05-13 富士通株式会社 機能拡張装置及び電子機器システム
ATE507585T1 (de) 2000-10-19 2011-05-15 Quantum Semiconductor Llc Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden
AU2002219320A1 (en) 2000-12-14 2002-06-24 King's College London Optoelectronic detector and related circuit
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US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
JPS63174358A (ja) * 1987-01-14 1988-07-18 Hitachi Ltd 固体撮像素子
JPH09148617A (ja) * 1995-11-27 1997-06-06 Sanyo Electric Co Ltd 光半導体装置

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Also Published As

Publication number Publication date
US20070018268A1 (en) 2007-01-25
WO2004044994A9 (de) 2004-07-22
AU2003291934A1 (en) 2004-06-03
DE10252878A1 (de) 2004-06-03
WO2004044994A2 (de) 2004-05-27
EP1561245A2 (de) 2005-08-10
DE10394078D2 (de) 2005-10-06
US7535074B2 (en) 2009-05-19

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