WO2003038893A3 - Halbleiterstruktur und verfahren zum herstellen derselben - Google Patents
Halbleiterstruktur und verfahren zum herstellen derselben Download PDFInfo
- Publication number
- WO2003038893A3 WO2003038893A3 PCT/EP2002/011853 EP0211853W WO03038893A3 WO 2003038893 A3 WO2003038893 A3 WO 2003038893A3 EP 0211853 W EP0211853 W EP 0211853W WO 03038893 A3 WO03038893 A3 WO 03038893A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- production
- semiconductor structure
- substrate
- recess
- main surface
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10152915 | 2001-10-26 | ||
DE10152915.5 | 2001-10-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003038893A2 WO2003038893A2 (de) | 2003-05-08 |
WO2003038893A3 true WO2003038893A3 (de) | 2003-10-09 |
Family
ID=7703824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2002/011853 WO2003038893A2 (de) | 2001-10-26 | 2002-10-23 | Halbleiterstruktur und verfahren zum herstellen derselben |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW561593B (de) |
WO (1) | WO2003038893A2 (de) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61236155A (ja) * | 1985-04-12 | 1986-10-21 | Hitachi Ltd | 半導体装置 |
US4642880A (en) * | 1984-04-19 | 1987-02-17 | Kabushiki Kaisha Toshiba | Method for manufacturing a recessed semiconductor device |
EP0375585A2 (de) * | 1988-12-21 | 1990-06-27 | International Business Machines Corporation | Verfahren zum Herstellen einer BICMOS-Anordnung |
US5166082A (en) * | 1990-06-13 | 1992-11-24 | Oki Electric Industry Co., Ltd. | BIMOS transistor devices having bipolar and MOS transistors formed in substrate thereof and process for the fabrication of the same |
US5886387A (en) * | 1995-09-27 | 1999-03-23 | Kabushiki Kaisha Toshiba | BiCMOS semiconductor integrated circuit device having MOS transistor and bipolar transistor regions of different thickness |
US5904535A (en) * | 1995-06-02 | 1999-05-18 | Hyundai Electronics America | Method of fabricating a bipolar integrated structure |
US6011283A (en) * | 1992-10-19 | 2000-01-04 | Hyundai Electronics America | Pillar emitter for BiCMOS devices |
JP2000277638A (ja) * | 1999-03-24 | 2000-10-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
US6133115A (en) * | 1995-08-16 | 2000-10-17 | Nec Corporation | Formation of gate electrode |
-
2002
- 2002-10-23 WO PCT/EP2002/011853 patent/WO2003038893A2/de active Search and Examination
- 2002-10-25 TW TW91125078A patent/TW561593B/zh not_active IP Right Cessation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4642880A (en) * | 1984-04-19 | 1987-02-17 | Kabushiki Kaisha Toshiba | Method for manufacturing a recessed semiconductor device |
JPS61236155A (ja) * | 1985-04-12 | 1986-10-21 | Hitachi Ltd | 半導体装置 |
EP0375585A2 (de) * | 1988-12-21 | 1990-06-27 | International Business Machines Corporation | Verfahren zum Herstellen einer BICMOS-Anordnung |
US5166082A (en) * | 1990-06-13 | 1992-11-24 | Oki Electric Industry Co., Ltd. | BIMOS transistor devices having bipolar and MOS transistors formed in substrate thereof and process for the fabrication of the same |
US6011283A (en) * | 1992-10-19 | 2000-01-04 | Hyundai Electronics America | Pillar emitter for BiCMOS devices |
US5904535A (en) * | 1995-06-02 | 1999-05-18 | Hyundai Electronics America | Method of fabricating a bipolar integrated structure |
US6133115A (en) * | 1995-08-16 | 2000-10-17 | Nec Corporation | Formation of gate electrode |
US5886387A (en) * | 1995-09-27 | 1999-03-23 | Kabushiki Kaisha Toshiba | BiCMOS semiconductor integrated circuit device having MOS transistor and bipolar transistor regions of different thickness |
JP2000277638A (ja) * | 1999-03-24 | 2000-10-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 011, no. 081 (E - 488) 12 March 1987 (1987-03-12) * |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 13 5 February 2001 (2001-02-05) * |
Also Published As
Publication number | Publication date |
---|---|
WO2003038893A2 (de) | 2003-05-08 |
TW561593B (en) | 2003-11-11 |
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