WO2002059971A1 - Commutateur de puissance a asservissement en di/dt - Google Patents
Commutateur de puissance a asservissement en di/dt Download PDFInfo
- Publication number
- WO2002059971A1 WO2002059971A1 PCT/FR2002/000259 FR0200259W WO02059971A1 WO 2002059971 A1 WO2002059971 A1 WO 2002059971A1 FR 0200259 W FR0200259 W FR 0200259W WO 02059971 A1 WO02059971 A1 WO 02059971A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- switch
- circuit
- winding
- current
- signal
- Prior art date
Links
- 238000004804 winding Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000001465 metallisation Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 244000045947 parasite Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
Definitions
- the present invention relates to the switching of a load connected by a bidirectional switch to an AC network or by a unidirectional switch to an AC network rectified by a rectifier bridge.
- the present invention finds, for example, applications in the field of controlling medium power loads, for example a vacuum cleaner motor, a temperature-controlled heating circuit, an attenuator lighting system, etc.
- FIG. 1 very schematically shows such a switching circuit.
- Load 1 is arranged at terminals A and B of an alternating voltage or of a rectified alternating voltage, in series with a power switch S.
- the switch SW will be called a power switch, although it is in the examples given a medium power switch intended for switching loads connected to the mains.
- the switch SW is controlled by a control circuit 2 receiving a control order, periodic or not, on a terminal 3.
- the control circuit is, for example, intended to put the switch in conduction during only part of an alternation of the alternating voltage between terminals A and B, which corresponds to a so-called phase angle control. Then, when the switch closes, a strong current draw occurs in the load. In other words, the variation in current as a function of time (di / dt) is brutal and the current presents significant peaks each time the switch is closed.
- American patent 6127746 provides a relatively complex circuit for detecting current peaks and controlling the control of an MOS transistor so as to dampen these current peaks.
- Japanese patent application 07/131316 provides for detecting overcurrents on an output pad of an MOS transistor by surrounding this pad with a winding, which leads to a significant increase in the surface of the semiconductor chip containing the transistor.
- the present invention aims to solve the problem of returning parasites to a power source and the elements connected to this source without adding discrete elements such as a high value inductor, without providing for a complex detection circuit, and without increasing the surface of the semiconductor chip.
- the present invention provides a vertical type power switch produced in a semiconductor chip, comprising a winding produced at the periphery of at least one face of said chip, this winding comprising two connection terminals providing a proportional signal. to variations in current in said switch.
- the switch further comprises a high value resistor disposed in or on the semiconductor chip.
- the switch is of the bipolar transistor, MOS transistor or bipolar transistor with insulated gate type.
- the switch is associated with a control circuit for a control signal from this switch as a function of the signal at the terminals of said winding.
- FIG. 1 schematically represents a load switching circuit according to the prior art
- FIG. 2 schematically represents a circuit for switching a load associated with a current variation detector
- Figure 3A is a partial sectional view of an exemplary switch according to the present invention
- Figure 3B is a schematic top view of an exemplary switch according to the present invention
- FIG. 4 represents a circuit for switching the current in a load according to the present invention.
- the present invention aims to provide a simple circuit of the type illustrated in Figure 2.
- a load 1 is connected between AC supply terminals A and B via a switch SW.
- the switch SW is controlled by a control circuit 12 receiving a trigger signal 3 from a selected time of each half cycle.
- the variation in current di / dt in the load circuit at the time of closing is detected and a correction signal linked to the value of the variation di / dt is applied to the control circuit 12 so that this value di / dt does not not exceed a determined threshold.
- the present invention provides for making the current variation detection circuit monolithically with the power switch SW.
- FIG. 3A An embodiment of the present invention is illustrated in the partial sectional view of FIG. 3A in the case where the vertical power component is an MOS transistor.
- the vertical MOS transistor is formed from an N-type substrate 21 comprising on the side of its lower face a more heavily doped layer N of type N covered with a drain metallization D.
- a drain metallization D On the side of the upper face, are formed P-type boxes 23.
- an N-type ring 24 is formed, the external periphery of which extends near the periphery of the box 23.
- the zone of the box 23 between the periphery of this box and the external periphery of the region 24 of type P is covered with a gate metallization 26 formed on an insulating layer 27.
- a source metallization is integral with the central part of the boxes 23 and the rings 24.
- a peripheral zone 28 of type P is also shown which is deeper than the wells 23 at the periphery of the component.
- This zone 28 or other peripheral means for ensuring that the breakdown of a vertical MOS transistor cannot be done at the periphery are known to one skilled in the art and are susceptible of numerous variants. Such a periphery is necessary and corresponds to a lost, non-active surface of the component.
- a vertical MOS transistor is shown above by way of example.
- the invention could also be implemented with other vertical power switches such that the current which flows through them is linked to the voltage applied to their control electrode.
- Examples of such co po- sants are bipolar transistors, or insulated gate bipolar transistors (IGBT) (it will be noted that the structure of an IGBT transistor differs from the structure shown diagrammatically in FIG. 3A only by the fact that layer 22 instead of be heavily doped of the same type as the substrate is heavily doped of the opposite conductivity type).
- the other components also include a peripheral zone intended to ensure a sufficiently high breakdown voltage.
- the periphery of the component is coated with a metallization 30 wound in successive turns around the power component.
- the metallization 30 is isolated from the substrate 21 by an insulating layer 29, for example made of silicon oxide.
- FIG. 3B shows, by a dotted outline, the outline of the source metallization S and by another dotted outline, the outline of a region of contact pickup of gate G.
- this current When the component is traversed by a vertical current, variations of this current will produce at the terminals 31, 32 of the inductor 30 a signal proportional to current variation. It will also be noted that this signal is detectable even if the current is not strictly vertical, provided that it does not remain in the plane of the turns.
- a winding with four turns One could of course provide windings with more or less turns depending on the target detection threshold.
- This resistor can be arranged externally or can be produced monolithically on the semiconductor chip 21 in the form of a polycrystalline silicon resistor or in any other way known to those skilled in the art.
- FIG. 4 represents an example of use of a component according to the present invention in a circuit.
- this component has been designated generally by the reference 40 and comprises for example a power transistor T, a winding 30 and a resistor R integrated in a monolithic fashion.
- the terminal 32 of the winding 30 and of the resistor R is connected to ground.
- Terminal 31 is connected via a multiplier 41 by a coefficient K to the subtraction input of an adder 42 whose addition input receives the control signal from circuit 12.
- this order tends to close transistor T.
- the servo circuit of the transistor T or other power switch is susceptible of numerous variants which will appear to one skilled in the art. For example, in order to meet standards for returning parasites to a supply network, it is possible to provide a supply circuit which performs different compensations according to the frequency of the di / dt signal.
- control circuit and of the di / dt signal processing circuit can be integrated on the same semiconductor chip as that which contains the power component.
- control circuit and of the di / dt signal processing circuit can be integrated on the same semiconductor chip as that which contains the power component.
- the formation of the winding 30 does not cause any loss of surface of the semiconductor chip since this winding is arranged above the periphery of the chip, which normally corresponds to a necessary surface but not active.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02700368A EP1358677A1 (fr) | 2001-01-24 | 2002-01-22 | Commutateur de puissance a asservissement en di/dt |
US10/470,024 US7432549B2 (en) | 2001-01-24 | 2002-01-22 | Di/dt servo power switches |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR01/00935 | 2001-01-24 | ||
FR0100935A FR2819953B1 (fr) | 2001-01-24 | 2001-01-24 | Commutateur de puissance a asservissement en di/dt |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002059971A1 true WO2002059971A1 (fr) | 2002-08-01 |
Family
ID=8859176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2002/000259 WO2002059971A1 (fr) | 2001-01-24 | 2002-01-22 | Commutateur de puissance a asservissement en di/dt |
Country Status (6)
Country | Link |
---|---|
US (1) | US7432549B2 (fr) |
EP (1) | EP1358677A1 (fr) |
KR (1) | KR20030016241A (fr) |
CN (1) | CN1279616C (fr) |
FR (1) | FR2819953B1 (fr) |
WO (1) | WO2002059971A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107093621A (zh) * | 2016-02-18 | 2017-08-25 | 比亚迪股份有限公司 | 半导体功率器件及其形成方法 |
CN112430611A (zh) * | 2020-11-30 | 2021-03-02 | 华南理工大学 | 一种经优化的玉米赤霉烯酮降解酶zhd-p编码基因、重组菌体、表面展示体系与应用 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59181046A (ja) * | 1983-03-31 | 1984-10-15 | Toshiba Corp | 半導体集積回路 |
EP0577531A1 (fr) * | 1992-06-30 | 1994-01-05 | STMicroelectronics S.A. | Diode de protection pour composant semiconducteur vertical |
JPH07131316A (ja) * | 1993-10-29 | 1995-05-19 | Nec Corp | 半導体集積回路 |
JPH09260592A (ja) * | 1996-03-19 | 1997-10-03 | Fuji Electric Co Ltd | 集積回路 |
JPH09312347A (ja) * | 1996-05-24 | 1997-12-02 | Hitachi Ltd | Mis型半導体装置 |
US6127746A (en) * | 1996-10-21 | 2000-10-03 | International Rectifier Corp. | Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1475990A (en) * | 1973-06-09 | 1977-06-10 | Cav Ltd | Dc motor systems |
US4628438A (en) * | 1983-12-16 | 1986-12-09 | Control Concepts Corporation | Power converter apparatus and method employing plural branches |
US5872384A (en) * | 1997-01-17 | 1999-02-16 | Lucent Technologies Inc. | Component arrangement having magnetic field controlled transistor |
JPH10247718A (ja) * | 1997-03-04 | 1998-09-14 | Fuji Electric Co Ltd | 電流検知部付き縦型半導体素子 |
US6837438B1 (en) * | 1998-10-30 | 2005-01-04 | Hitachi Maxell, Ltd. | Non-contact information medium and communication system utilizing the same |
JP2001084343A (ja) * | 1999-09-16 | 2001-03-30 | Toshiba Corp | 非接触icカード及びicカード通信システム |
US6326648B1 (en) * | 1999-12-20 | 2001-12-04 | Stmicroelectronics S.A. | Power switch with a controlled DI/DT |
-
2001
- 2001-01-24 FR FR0100935A patent/FR2819953B1/fr not_active Expired - Fee Related
-
2002
- 2002-01-22 KR KR1020027012635A patent/KR20030016241A/ko not_active Application Discontinuation
- 2002-01-22 CN CNB028001532A patent/CN1279616C/zh not_active Expired - Lifetime
- 2002-01-22 US US10/470,024 patent/US7432549B2/en not_active Expired - Lifetime
- 2002-01-22 WO PCT/FR2002/000259 patent/WO2002059971A1/fr active Application Filing
- 2002-01-22 EP EP02700368A patent/EP1358677A1/fr not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59181046A (ja) * | 1983-03-31 | 1984-10-15 | Toshiba Corp | 半導体集積回路 |
EP0577531A1 (fr) * | 1992-06-30 | 1994-01-05 | STMicroelectronics S.A. | Diode de protection pour composant semiconducteur vertical |
JPH07131316A (ja) * | 1993-10-29 | 1995-05-19 | Nec Corp | 半導体集積回路 |
JPH09260592A (ja) * | 1996-03-19 | 1997-10-03 | Fuji Electric Co Ltd | 集積回路 |
JPH09312347A (ja) * | 1996-05-24 | 1997-12-02 | Hitachi Ltd | Mis型半導体装置 |
US6127746A (en) * | 1996-10-21 | 2000-10-03 | International Rectifier Corp. | Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor |
Non-Patent Citations (4)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 009, no. 039 (E - 297) 19 February 1985 (1985-02-19) * |
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 08 29 September 1995 (1995-09-29) * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 02 30 January 1998 (1998-01-30) * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 04 31 March 1998 (1998-03-31) * |
Also Published As
Publication number | Publication date |
---|---|
KR20030016241A (ko) | 2003-02-26 |
CN1279616C (zh) | 2006-10-11 |
US7432549B2 (en) | 2008-10-07 |
EP1358677A1 (fr) | 2003-11-05 |
FR2819953A1 (fr) | 2002-07-26 |
FR2819953B1 (fr) | 2003-06-13 |
CN1455957A (zh) | 2003-11-12 |
US20040056303A1 (en) | 2004-03-25 |
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