WO2002035565A1 - Sensors and array and method to manufacture thereof - Google Patents
Sensors and array and method to manufacture thereof Download PDFInfo
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- WO2002035565A1 WO2002035565A1 PCT/AU2001/001354 AU0101354W WO0235565A1 WO 2002035565 A1 WO2002035565 A1 WO 2002035565A1 AU 0101354 W AU0101354 W AU 0101354W WO 0235565 A1 WO0235565 A1 WO 0235565A1
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- WIPO (PCT)
- Prior art keywords
- peuvs
- pec
- selected areas
- layer
- electrically
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- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title claims description 6
- 239000004020 conductor Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000003792 electrolyte Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000005855 radiation Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000003197 catalytic effect Effects 0.000 claims 6
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000009826 distribution Methods 0.000 claims 1
- 238000004952 furnace firing Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 12
- 238000000576 coating method Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010411 electrocatalyst Substances 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920003317 Fusabond® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Definitions
- This invention relates to the sensing, detection and measurements of Ultra Violet Radiation, devices and methods used for such measurements. More particularly, the present invention relates to photoelectrochemical UV sensors. More particularly, the present invention relates to the design of Photoelectrochemical UV Sensors (PEUVS) and PEUVS arrays and methods to manufacture thereof.
- PEUVS Photoelectrochemical UV Sensors
- the devices built according to the first principle utilise solid-state semiconducting structures and their junctions. These devices are suitable for both qualitative and quantitative measurements of UV radiation intensity, but usually are expensive to manufacture [ US4772335: Photovoltaic device responsive to ultraviolet radiation, Huang, Wingo C, 1988; W09829715A1: Optical Array converting UV, Ian Kuklins i, 1998) .
- the devices built according to the second principle utilise photochromic material that changes colour when illuminated by UV radiation.
- JP10300576A2 Film and card for UV check as well as seal for UV check, Kuwamoto Shu i and Suzuki Yoshio, 1998]. These devices are not expensive, but their usage for quantitative measurements is limited.
- Photoelectrochemical UV Sensors disclosed in this application, are capable of detecting and measuring UV radiation intensity and dose without undue expense.
- PEUVS cells are based on photovoltaic effect on junction between wide band gap ⁇ - semiconductor and electrolyte.
- One typical arrangement involves two glass substrates, each utilising a substantially planar electrically conducting (PEC) coating upon the internal surface of the substrates (the PEUVS of the first type) .
- Another typical arrangement involves the first substrate being glass or UV transparent polymeric material and utilising a PEC upon the internal surface of the substrate, with the second substrate being polymeric (PEUVS of the second type) .
- the internal surface of said second polymeric substrate is coated with a PEC
- said second polymeric substrate comprises a polymeric foil laminate, utilising adjacent electrically conductive material, such as carbon.
- the external surface may be a laminated metal film, and in other arrangements, the external surface may be coated by a metal .
- PEUVS contain a photoanode, typically comprising a nanoporous wide bandgap semiconducting oxide (e.g. titanium dioxide known as titania) layer attached to one conductive coating, and a cathode, typically comprising a redox electrocatalyst layer (for example Pt-based or carbon- based) attached to the other conductive coating or conductive material.
- a photoanode typically comprising a nanoporous wide bandgap semiconducting oxide (e.g. titanium dioxide known as titania) layer attached to one conductive coating
- a cathode typically comprising a redox electrocatalyst layer (for example Pt-based or carbon- based) attached to the other conductive coating or conductive material.
- the semiconducting layer can be formed by one of the techniques available for deposition of films with controlled stoichiometry (e.g. sol-gel, screen printing, physical and chemical vapour deposition, etc.)
- An electrolyte containing a redox mediator (for example iodide/triodide) is located between the photoanode and cathode, and the electrolyte is sealed from the environment.
- a redox mediator for example iodide/triodide
- Nitrile based electrolytes such as, for example, valeronatrile, mtoluonitrile, acetonitrile
- molten salt electrolytes molten salt electrolytes
- gel type electrolytes are used.
- Other electrolytes can also be used subject to their stability under UV radiation and temperature stress.
- PEUVS single cell designs would be advantaged by an improved sensitivity that could be achieved by an increased size of individual cell.
- transparent PEC which usually comprise a metal oxide(s)
- ECM electrically conductive material
- the dominant selection criteria for the electrically conductive material deposited upon the PEC are cost and conductivity, so the selected material is commonly chemically reactive towards the electrolyte of the PEUVS cells.
- a protective layer for example low lead glass frit or polymeric materials
- Another way of increasing size of a PEUVS is to connect individual cells in series. External series connection of RPEC cells can increase manufacturing costs and introduce additional resistive losses. To enable internal series connection of adjacent PEUVS cells, selected areas of such PEC must be electrically isolated, portions of such areas overlapped when laminated; interconnects used to connect such overlapped areas and electrolyte-impermeable barriers used to separate the electrolyte of individual cells.
- Figure 1 is a cross-sectional view of a PEUVS of the first type, incorporating the constituent layers of the inventions .
- Figure 2 is a cross-sectional view of a PEUVS of the first type with improved current output.
- Figure 3 is a cross-sectional view of a PEUVS of the first type with improved voltage output.
- Figure 4 is a cross-sectional view of PEUVS of the second type.
- Figure 5 is a cross-sectional view of the PEUVS of ------T - the second type with improved voltage output.
- Figure 6 is a cross-sectional view of UV sensing array based on PEUVS of the first type.
- Figure 7 is a plan view of UV sensing array based on PEUVS of the second type.
- the electrical connections to the external measuring devices are made by creating conductive pattern on the planar electrical conductor coatings (for example, by means of laser ablation, chemical etching) .
- Figure 8 is a flow chart of a process to manufacture PEUVS of the first type with improved voltage output.
- the PEUVS of the first type comprises a photoanode (1) and a cathode (2) .
- the photoanode comprises a glass substrate (3), coated with a fluorine doped tin oxide transparent electron conductor coating (5) . Both glass substrate (3) and conducting coating (5) are substantially transparent to UV radiation.
- the nanoporous layer of titania (7) is screen printed onto the selected area of the transparent electrical conductor (5) .
- the substrate (4) and the planar electrical conductor (6) used for cathode (2) in this example are identical to those used for the photoanode.
- Thin layer of Pt catalyst is screen-printed onto selected area of the electrical conductor ( 6) .
- this diagram of a PEUVS of the first type with improved voltage comprises two glass substrates (3) and (4) , both of which are coated with a transparent planar electron conductor (5) and (6) .
- the cathode comprises a platinum electrocatalyst (8) attached to the conductor (6) .
- the photoanode comprises nanoparticulate titania layer (7) attached to the other conductor (5) .
- the interconnect (15) and the strips where the PEC has been removed (14) by laser.
- the interconnect is comprised of two different electrically conducting particles, 45um titanium and 0.5um tungsten, embedded within a hot melted matrix.
- the PEUVS of the second type compromises a glass substrate (3) which is coated with a transparent planar electron conductor (5) .
- This PEC layer is selectively isolated (14) to separate two electrodes of the PEUVS .
- Titania (7) is deposited onto the TEC glass layer followed by a ceramic oxide spacer layer (zirconia) (16) and a carbon based catylist/conductor layer (17) .
- the ceramic oxide spacer layer is filled with a redox electrolyte 9.
- a second substrate - metallic/polymer backing laminate (14) is sealed over the PEUVS device in such a way that metalic part of the laminate forms external surface of the device, thus creating inpermittable barrier for moisture and oxygen .
- the PEUVS of the second type with improved voltage comprises two (or more) PEUVS cells of the second type (as described in the previous example, see Fig.4) connected in series.
- an array of the PEUVS ' s of the first type is presented.
- the array consists of 3 PEUVS of the first type separated by sealant (11) .
- the cathodes of the said PEUVS of the first type are connected to form a common ( + ) electrode of the array (6) .
- the transparent PEC (5) of the photoanodes is electrically isolated by removing portions of PEC material (14) and connected to the 3 separate outputs of the array.
- FIG. 7 a plan view of PEUVS of the second type arranged in an array is presented.
- the array consists of 9 PEUVS (A-I) arranged on one substrate coated with PEC.
- PEC layer is selectively removed (14) to separate each sensor.
- the PEC layer is used as a common electrode of the array and 9 separate outputs (A-I) are connected (10) to an external current and charge meters .
- a manufacturing process consists of printing and firing stages that are followed by assembly of a PEUVS.
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Abstract
Photoelectrochemical Photovoltaic sensor (PEUVS) device comprising photoanode (1), cathode (2) and electrolyte (9), wherein said photoanode comprises substrate (3), planar electrical conductor (PEC) (5) supported upon selected areas of said substrate and one or more layers of wide band gap semiconductor (7) applied to selected areas of said PEC said electrolyte is placed between said wide band gap semiconductor and said cathode.
Description
TECHNICAL FIELD
This invention relates to the sensing, detection and measurements of Ultra Violet Radiation, devices and methods used for such measurements. More particularly, the present invention relates to photoelectrochemical UV sensors. More particularly, the present invention relates to the design of Photoelectrochemical UV Sensors (PEUVS) and PEUVS arrays and methods to manufacture thereof.
BACKGROUND TO THE INVENTION
Examples in the art are centered on 2 principles of sensing UV radiation.
The devices built according to the first principle utilise solid-state semiconducting structures and their junctions. These devices are suitable for both qualitative and quantitative measurements of UV radiation intensity, but usually are expensive to manufacture [ US4772335: Photovoltaic device responsive to ultraviolet radiation, Huang, Wingo C, 1988; W09829715A1: Optical Array converting UV, Ian Kuklins i, 1998) .
The devices built according to the second principle utilise photochromic material that changes colour when illuminated by UV radiation. [ JP10300576A2 : Film and card for UV check as well as seal for UV check, Kuwamoto Shu i and Suzuki Yoshio, 1998]. These devices are not expensive, but their usage for quantitative measurements is limited.
SUMMARY OF THE INVENTION
Photoelectrochemical UV Sensors (PEUVS) , disclosed in this application, are capable of detecting and measuring UV radiation intensity and dose without undue expense.
PEUVS cells, disclosed in this application, are based on photovoltaic effect on junction between wide band gap
■ - semiconductor and electrolyte.
One typical arrangement involves two glass substrates, each utilising a substantially planar electrically conducting (PEC) coating upon the internal surface of the substrates (the PEUVS of the first type) . Another typical arrangement involves the first substrate being glass or UV transparent polymeric material and utilising a PEC upon the internal surface of the substrate, with the second substrate being polymeric (PEUVS of the second type) . In some arrangements, the internal surface of said second polymeric substrate is coated with a PEC, whereas in other arrangements, said second polymeric substrate comprises a polymeric foil laminate, utilising adjacent electrically conductive material, such as carbon. Also, in some arrangements, the external surface may be a laminated metal film, and in other arrangements, the external surface may be coated by a metal . At least one of said first and second substrates is substantially transparent to UV light, as is the attached planar electrically conducting coating. PEUVS contain a photoanode, typically comprising a nanoporous wide bandgap semiconducting oxide (e.g. titanium dioxide known as titania) layer attached to one conductive coating, and a cathode, typically comprising a redox electrocatalyst layer (for example Pt-based or carbon- based) attached to the other conductive coating or conductive material. The following limitations are taken into considerations in selecting semiconducting oxide for PEUVS: a) A bandgap of the semiconductor is wide enough to eliminate absorption of visible light. This is to ensure that the PEUVS is not sensible to visible light.
b) A bandgap of the semiconductor is narrow enough to allow absorption of desirable part of UV spectrum.
The semiconducting layer can be formed by one of the techniques available for deposition of films with controlled stoichiometry (e.g. sol-gel, screen printing, physical and chemical vapour deposition, etc.)
An electrolyte containing a redox mediator (for example iodide/triodide) is located between the photoanode and cathode, and the electrolyte is sealed from the environment. Nitrile based electrolytes (such as, for example, valeronatrile, mtoluonitrile, acetonitrile) , molten salt electrolytes, gel type electrolytes are used. Other electrolytes can also be used subject to their stability under UV radiation and temperature stress.
Many PEUVS single cell designs would be advantaged by an improved sensitivity that could be achieved by an increased size of individual cell. However, such transparent PEC, which usually comprise a metal oxide(s), have high resistivity when compared with normal metal conductors, resulting in high resistive losses for large area PEUVS, which affects the sensitivity of the PEUVS device especially in high illumination conditions. These losses can be reduced by the use of a pattern of electrically conductive material (ECM) in the form of bus bars, pads, grid of lines or any other pattern on the PEC coating (s) . The dominant selection criteria for the electrically conductive material deposited upon the PEC are cost and conductivity, so the selected material is commonly chemically reactive towards the electrolyte of the PEUVS
cells. This problem can be overcome by application of a protective layer (for example low lead glass frit or polymeric materials) over the electrically conductive material . Another way of increasing size of a PEUVS is to connect individual cells in series. External series connection of RPEC cells can increase manufacturing costs and introduce additional resistive losses. To enable internal series connection of adjacent PEUVS cells, selected areas of such PEC must be electrically isolated, portions of such areas overlapped when laminated; interconnects used to connect such overlapped areas and electrolyte-impermeable barriers used to separate the electrolyte of individual cells.
BRIEF DESCRIPTION OF DRAWINGS
Having broadly portrayed the nature of the present invention, embodiments thereof will now be described by way of example and illustration. In the following description, reference will be made to the accompanying drawings in which:
Figure 1 is a cross-sectional view of a PEUVS of the first type, incorporating the constituent layers of the inventions .
Figure 2 is a cross-sectional view of a PEUVS of the first type with improved current output.
Figure 3 is a cross-sectional view of a PEUVS of the first type with improved voltage output.
Figure 4 is a cross-sectional view of PEUVS of the second type.
Figure 5 is a cross-sectional view of the PEUVS of
------T - the second type with improved voltage output.
Figure 6 is a cross-sectional view of UV sensing array based on PEUVS of the first type.
Figure 7 is a plan view of UV sensing array based on PEUVS of the second type. The electrical connections to the external measuring devices are made by creating conductive pattern on the planar electrical conductor coatings (for example, by means of laser ablation, chemical etching) . Figure 8 is a flow chart of a process to manufacture PEUVS of the first type with improved voltage output.
Detailed description of drawings .
Referring to Figure 1, the PEUVS of the first type comprises a photoanode (1) and a cathode (2) . The photoanode comprises a glass substrate (3), coated with a fluorine doped tin oxide transparent electron conductor coating (5) . Both glass substrate (3) and conducting coating (5) are substantially transparent to UV radiation. The nanoporous layer of titania (7) is screen printed onto the selected area of the transparent electrical conductor (5) .
The substrate (4) and the planar electrical conductor (6) used for cathode (2) in this example are identical to those used for the photoanode. Thin layer of Pt catalyst is screen-printed onto selected area of the electrical conductor ( 6) .
Two electrodes (photoanode and cathode) are sealed with silicone (11) and space between them is filled with nitrile electrolyte (9) containing a redox mediator (I~/I3 ~ ) is located between the cathode and photoanode. The
> sensor is connected to external current/charge measurements apparatus via electrical connections (10). Referring to Figure 2, a cross-sectional view of a PEUVS of the first type with improved current is demonstrated. The same reference numerals have been used in Figure 2 for the same components as designated in Figure 1 and no further description will be given of these components. Reference numeral (12) designates metal (e.g. Ag) strips deposited by screen printing and protected against corrosion by insulating protective cover 13
(fusabond), dispensed using needle type dispenser. The metal strips are electrically connected to the external electrical connections (10).
Referring to Figure 3, this diagram of a PEUVS of the first type with improved voltage comprises two glass substrates (3) and (4) , both of which are coated with a transparent planar electron conductor (5) and (6) . The cathode comprises a platinum electrocatalyst (8) attached to the conductor (6) . The photoanode comprises nanoparticulate titania layer (7) attached to the other conductor (5) . Also shown are the interconnect (15) and the strips where the PEC has been removed (14) by laser. The interconnect is comprised of two different electrically conducting particles, 45um titanium and 0.5um tungsten, embedded within a hot melted matrix.
With reference to Figure 4, the PEUVS of the second type compromises a glass substrate (3) which is coated with a transparent planar electron conductor (5) . This PEC layer is selectively isolated (14) to separate two electrodes of the PEUVS . Titania (7) is deposited onto the TEC glass layer followed by a ceramic oxide spacer
layer (zirconia) (16) and a carbon based catylist/conductor layer (17) . The ceramic oxide spacer layer is filled with a redox electrolyte 9. A second substrate - metallic/polymer backing laminate (14) is sealed over the PEUVS device in such a way that metalic part of the laminate forms external surface of the device, thus creating inpermittable barrier for moisture and oxygen .
With reference to Figure 5 the PEUVS of the second type with improved voltage comprises two (or more) PEUVS cells of the second type (as described in the previous example, see Fig.4) connected in series.
Refering to Figure 6, an array of the PEUVS ' s of the first type is presented. In this example the array consists of 3 PEUVS of the first type separated by sealant (11) . The cathodes of the said PEUVS of the first type are connected to form a common ( + ) electrode of the array (6) . The transparent PEC (5) of the photoanodes is electrically isolated by removing portions of PEC material (14) and connected to the 3 separate outputs of the array.
With reference to Figure 7 a plan view of PEUVS of the second type arranged in an array is presented. In this example the array consists of 9 PEUVS (A-I) arranged on one substrate coated with PEC. PEC layer is selectively removed (14) to separate each sensor. The PEC layer is used as a common electrode of the array and 9 separate outputs (A-I) are connected (10) to an external current and charge meters . Refering to Figure 8 a manufacturing process consists of printing and firing stages that are followed by assembly of a PEUVS.
Claims
1. Photoelectrochemical Photovoltaic sensor (PEUVS) device comprising photoanode (1) , cathode (2) and electrolyte (9) , wherein • said photoanode comprises substrate (3) , planar electrical conductor (PEC) (5) supported upon selected areas of said substrate and one or more layers of wide band gap semiconductor (7) applied to selected areas of said PEC • said electrolyte is placed between said wide band gap semiconductor and said cathode.
2. The PEUVS device of claim 1, wherein said layer (s) of wide band gap semiconductor is (are) nanoporous.
3. The PEUVS device of claim 1, wherein said layer (s) of wide band gap semiconductor is
-'--7 "
(are) deposited by screen printing.
4. The PEUVS device of claims 1 to 3 , wherein said cathode comprises substrate (4), planar electrical conductor (PEC) (6) supported upon selected areas of the said substrate and catalytic layer (8) applied to selected areas of the said planar electrical conductor.
5. The PEUVS device of claim 4, wherein said catalytic layer is applied by screen printing .
6. The PEUVS device of claims 1 to 5, wherein at least one substrate and its PEC is substantially transparent to Ultra Violet Radiation .
7. The PEUVS device of claims 1 to 6 , wherein external electrical connections (10) are made to said planar electrical conductors.
8. The PEUVS device according to claims 1 to 6, wherein a pattern of electrically conductive material (12) is deposited on said PEC, not overlapping with said selected area of said PEC and external electrical connections (10) are made to said electrically conductive material (ECM) thus forming a PEUVS with improved current .
The PEUVS device according to claim 8,
- . C- - wherein protective material (13) is applied over said Electrically Conductive Material to protect said ECM from electrolyte of said PEUVS .
10. The PEUVS device according to claims 1 to 6, comprising two or more cells, wherein said PEC on each substrate are each divided into electrically isolated regions, with each said cell being formed between parts of two regions of said opposing Planar Electrical Conductors and said adjacent cells are electrically interconnected in series by an electrically interconnecting material (15) .
11. The PEUVS device according to claim 10, wherein said electrically interconnecting material is placed between a separate part of the region of said PEC adjacent to the said wide bandgap semiconductor layer of n h said cell and a separate part of the region of said opposing PEC adjacent to said catalytic layer of nth + 1 said cell, thus forming PEUVS with improved voltage.
12. The PEUVS device according to claims 10 to 11, wherein said electrically interconnecting material comprises electrically conductive particles.
13. The PEUVS device according to claim 12,
wherein said electrically conductive particles are of mixture of sizes, whereby some of said electrically conductive particles are of dimensions approximating the distance between said photoanode and said cathode and other said electrically conductive particles are of dimensions smaller than said distance.
14. The PEUVS device according to claim 12, wherein said conductive particles contained within a matrix.
15. The PEUVS device according to claim 14, wherein the matrix is a polymeric matrix.
16. The PEUVS device according to claim 1-3, wherein a porous insulating layer (16) is applied to said wide band gap semiconductor, and said cathode comprises of one or more of porous catalytic electrically conductive layers (17) applied to said porous insulating layer .
17. The PEUVS device of claim 16, wherein said PEC layer (5) of said photoanode is divided into 2 electrically isolated selected areas, said wide band semiconductor (7) is applied to the first selected area and said porous insulating layer (16) and said catalytic layer (17) each applied over both selected
areas, external electrical connections (10) are made to each of the selected areas.
The PEUVS device according to claim 17, wherein said porous insulating layer is made of ceramic material.
19. The PEUVS device according to claim 17, wherein said porous insulating layer is at least partially made of particles appropriate for reflecting Ultra Violet radiation back to the said wide band semiconductor layer.
20. The PEUVS device according to claim 17, wherein said catalytic electrically conductive layer is porous.
21. The PEUVS device of claim 17, wherein an airtight cover (18) is applied and sealed over the whole substrate.
22. The PEUVS device according to claim 17, wherein said PEC layer is divided into plurality of electrically insulated selected areas allowing plurality of PEUVS cells to be formed on one substrate; external electrical connections are made to one or more pairs of the said electrically isolated selected areas .
- <J ~
23. The PEUVS device according to claim 22, wherein said electrically insulated selected areas are created to connect said PEUVS cells in series, thus forming PEUVS device with improved voltage.
24. The PEUVS device according to claim 22, wherein said electrically insulated selected areas are created to connect said PEUVS cells in parallel, thus forming PEUVS device with improved current .
25. The PEUVS device according to claim 22, wherein said electrically insulated selected areas are created to connect some of the PEUVS cells in series and some of the PEUVS cells in parallel thus forming PEUVS device with improved voltage and current.
26. The PEUVS device according to claim 22, wherein said electrically insulated selected areas are created to allow external electrical connections to be made to each cell or group of said PEUVS cells, thus forming PEUVS array for detecting spa distribution of UV radiation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002210269A AU2002210269A1 (en) | 2000-10-25 | 2001-10-19 | Sensors and array and method to manufacture thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AUPR0995 | 2000-10-25 | ||
AUPR0995A AUPR099500A0 (en) | 2000-10-25 | 2000-10-25 | Uv sensors and arrays and methods to manufacture thereof |
Publications (1)
Publication Number | Publication Date |
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WO2002035565A1 true WO2002035565A1 (en) | 2002-05-02 |
Family
ID=3825042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/AU2001/001354 WO2002035565A1 (en) | 2000-10-25 | 2001-10-19 | Sensors and array and method to manufacture thereof |
Country Status (2)
Country | Link |
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AU (2) | AUPR099500A0 (en) |
WO (1) | WO2002035565A1 (en) |
Citations (11)
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FR2312123A1 (en) * | 1975-05-23 | 1976-12-17 | Anvar | Photoelectrochemical generator - capable of producing electricity from electromagnetic radiation alone |
US4181593A (en) * | 1978-06-22 | 1980-01-01 | Gte Laboratories Incorporated | Modified titanium dioxide photoactive electrodes |
EP0064850A2 (en) * | 1981-05-04 | 1982-11-17 | Diamond Shamrock Corporation | Solar energy converter |
US4521499A (en) * | 1983-05-19 | 1985-06-04 | Union Oil Company Of California | Highly conductive photoelectrochemical electrodes and uses thereof |
DE4306407A1 (en) * | 1993-03-02 | 1994-09-08 | Abb Research Ltd | Detector |
EP0692800A2 (en) * | 1994-07-15 | 1996-01-17 | Ishihara Sangyo Kaisha, Ltd. | Surface-modified titanium oxide film, process for producing the same and photoelectric conversion device using the same |
US5695628A (en) * | 1994-09-28 | 1997-12-09 | Becromal S.P.A. | Method of use of an aluminum foil |
JP2000223167A (en) * | 1999-01-28 | 2000-08-11 | Fuji Photo Film Co Ltd | Photoelectric conversion element, and photoelectric chemical battery |
WO2000057441A1 (en) * | 1999-03-18 | 2000-09-28 | Sustainable Technologies International Pty Ltd | Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices |
WO2000059816A1 (en) * | 1999-03-30 | 2000-10-12 | Sustainable Technologies International Pty Ltd | Methods to manufacture single cell and multi-cell regenerative photoelectrochemical devices |
WO2000062315A1 (en) * | 1999-04-09 | 2000-10-19 | Sustainable Technologies International Pty Ltd | Methods to implement sealing and electrical connections to single cell and multi-cell regenerative photoelectrochemical devices |
-
2000
- 2000-10-25 AU AUPR0995A patent/AUPR099500A0/en not_active Abandoned
-
2001
- 2001-10-19 AU AU2002210269A patent/AU2002210269A1/en not_active Abandoned
- 2001-10-19 WO PCT/AU2001/001354 patent/WO2002035565A1/en active Application Filing
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2312123A1 (en) * | 1975-05-23 | 1976-12-17 | Anvar | Photoelectrochemical generator - capable of producing electricity from electromagnetic radiation alone |
US4181593A (en) * | 1978-06-22 | 1980-01-01 | Gte Laboratories Incorporated | Modified titanium dioxide photoactive electrodes |
EP0064850A2 (en) * | 1981-05-04 | 1982-11-17 | Diamond Shamrock Corporation | Solar energy converter |
US4521499A (en) * | 1983-05-19 | 1985-06-04 | Union Oil Company Of California | Highly conductive photoelectrochemical electrodes and uses thereof |
DE4306407A1 (en) * | 1993-03-02 | 1994-09-08 | Abb Research Ltd | Detector |
EP0692800A2 (en) * | 1994-07-15 | 1996-01-17 | Ishihara Sangyo Kaisha, Ltd. | Surface-modified titanium oxide film, process for producing the same and photoelectric conversion device using the same |
US5695628A (en) * | 1994-09-28 | 1997-12-09 | Becromal S.P.A. | Method of use of an aluminum foil |
JP2000223167A (en) * | 1999-01-28 | 2000-08-11 | Fuji Photo Film Co Ltd | Photoelectric conversion element, and photoelectric chemical battery |
WO2000057441A1 (en) * | 1999-03-18 | 2000-09-28 | Sustainable Technologies International Pty Ltd | Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices |
WO2000059816A1 (en) * | 1999-03-30 | 2000-10-12 | Sustainable Technologies International Pty Ltd | Methods to manufacture single cell and multi-cell regenerative photoelectrochemical devices |
WO2000062315A1 (en) * | 1999-04-09 | 2000-10-19 | Sustainable Technologies International Pty Ltd | Methods to implement sealing and electrical connections to single cell and multi-cell regenerative photoelectrochemical devices |
Non-Patent Citations (1)
Title |
---|
DATABASE WPI Derwent World Patents Index; AN 2000-658382/64 * |
Also Published As
Publication number | Publication date |
---|---|
AU2002210269A1 (en) | 2002-05-06 |
AUPR099500A0 (en) | 2000-11-16 |
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