WO2001075189A3 - Cleaning of a plasma processing system silicon roof - Google Patents

Cleaning of a plasma processing system silicon roof Download PDF

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Publication number
WO2001075189A3
WO2001075189A3 PCT/US2001/010791 US0110791W WO0175189A3 WO 2001075189 A3 WO2001075189 A3 WO 2001075189A3 US 0110791 W US0110791 W US 0110791W WO 0175189 A3 WO0175189 A3 WO 0175189A3
Authority
WO
WIPO (PCT)
Prior art keywords
roof
cleaning
particulate matter
plasma processing
deionized water
Prior art date
Application number
PCT/US2001/010791
Other languages
French (fr)
Other versions
WO2001075189A2 (en
Inventor
Jennifer Y Sun
Ho Tong Fang
Samantha S H Tan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP01923089A priority Critical patent/EP1274876A2/en
Priority to JP2001573061A priority patent/JP2003534451A/en
Priority to KR1020027013313A priority patent/KR20020087477A/en
Publication of WO2001075189A2 publication Critical patent/WO2001075189A2/en
Publication of WO2001075189A3 publication Critical patent/WO2001075189A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Public Health (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

An apparatus for cleaning a silicon roof of a plasma chamber by etching the roof substantially without damage to the silicon structure. The etching is followed by cleaning the roof, using deionized water for rinsing the roof and determining the amount of particulate matter in the deionized water used for rinsing the roof. This is followed by determining qualitatively how much particulate matter of at least a certain size is in the deionized water. If the amount of particulate matter in the water is below a predetermined baseline, the particulate matter that will be deposited on material, such as a silicon wafer, being processed in the chamber is greatly reduced. The stability of the plasma processing with time is improved, with the time between roof cleanings rising from about 200 hours to nearly 300 hours.
PCT/US2001/010791 2000-04-03 2001-04-02 Cleaning of a plasma processing system silicon roof WO2001075189A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01923089A EP1274876A2 (en) 2000-04-03 2001-04-02 Cleaning of a plasma processing system silicon roof
JP2001573061A JP2003534451A (en) 2000-04-03 2001-04-02 Improved silicon roof cleaning for plasma processing systems
KR1020027013313A KR20020087477A (en) 2000-04-03 2001-04-02 Improved cleaning of a plasma processing system silicon roof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54117900A 2000-04-03 2000-04-03
US09/541,179 2000-04-03

Publications (2)

Publication Number Publication Date
WO2001075189A2 WO2001075189A2 (en) 2001-10-11
WO2001075189A3 true WO2001075189A3 (en) 2002-02-07

Family

ID=24158498

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/010791 WO2001075189A2 (en) 2000-04-03 2001-04-02 Cleaning of a plasma processing system silicon roof

Country Status (4)

Country Link
EP (1) EP1274876A2 (en)
JP (1) JP2003534451A (en)
KR (1) KR20020087477A (en)
WO (1) WO2001075189A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6846726B2 (en) 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
US20050048876A1 (en) 2003-09-02 2005-03-03 Applied Materials, Inc. Fabricating and cleaning chamber components having textured surfaces
US7899627B2 (en) 2006-09-28 2011-03-01 Lam Research Corporation Automatic dynamic baseline creation and adjustment
US10504720B2 (en) 2016-11-29 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Etching using chamber with top plate formed of non-oxygen containing material

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0680072A2 (en) * 1994-04-28 1995-11-02 Applied Materials, Inc. A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling
US5647386A (en) * 1994-10-04 1997-07-15 Entropic Systems, Inc. Automatic precision cleaning apparatus with continuous on-line monitoring and feedback
WO1999020812A1 (en) * 1997-10-21 1999-04-29 Applied Materials, Inc. Method for cleaning an etching chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0680072A2 (en) * 1994-04-28 1995-11-02 Applied Materials, Inc. A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling
US5647386A (en) * 1994-10-04 1997-07-15 Entropic Systems, Inc. Automatic precision cleaning apparatus with continuous on-line monitoring and feedback
WO1999020812A1 (en) * 1997-10-21 1999-04-29 Applied Materials, Inc. Method for cleaning an etching chamber

Also Published As

Publication number Publication date
EP1274876A2 (en) 2003-01-15
KR20020087477A (en) 2002-11-22
WO2001075189A2 (en) 2001-10-11
JP2003534451A (en) 2003-11-18

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