JP2974303B2 - Method of removing workpiece and electrostatic chuck device - Google Patents
Method of removing workpiece and electrostatic chuck deviceInfo
- Publication number
- JP2974303B2 JP2974303B2 JP9188998A JP9188998A JP2974303B2 JP 2974303 B2 JP2974303 B2 JP 2974303B2 JP 9188998 A JP9188998 A JP 9188998A JP 9188998 A JP9188998 A JP 9188998A JP 2974303 B2 JP2974303 B2 JP 2974303B2
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- water
- wafer
- alcohol
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Jigs For Machine Tools (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、静電チャックに保
持された半導体基板等の被処理体を離脱する方法及び静
電チャック装置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a method for separating a workpiece such as a semiconductor substrate held by an electrostatic chuck and an electrostatic chuck apparatus.
【０００２】[0002]
【従来の技術】ジョンソンラ−ベック力を利用した静電
チャックでは、ウェハを加工した後の処理において、静
電チャックからウェハを離脱するために残留電荷を除去
することが重要な要素の一つとなっている。この目的の
ために、通常、ウェハを加工した後、例えばドライエッ
チング装置では、ウェハの加工に関与しないプラズマ放
電を行い残留電荷を低減させる手法、或いはウェハ裏面
に機械的に電極を接触させ残留電荷を低減させる手法が
採用されている。2. Description of the Related Art In an electrostatic chuck utilizing Johnson-Labech force, in processing after processing a wafer, it is one of the important factors to remove residual charges in order to separate the wafer from the electrostatic chuck. Has become. For this purpose, usually, after processing the wafer, for example, in a dry etching apparatus, a method of reducing the residual charge by performing a plasma discharge which is not involved in the processing of the wafer, or a method of mechanically contacting an electrode with the back surface of the wafer to reduce the residual charge. Has been adopted.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、まず第
一の手法であるウェハの加工に関与しないプラズマ放電
は一般的には約２０ｓｅｃ程度必要とし、ウェハの加工
以外の余分な時間をかけることとなり生産性の観点より
十分とは言えず、また第二の手法であるウェハ裏面への
電極の機械的な接触では残留電荷の除去が十分でなく、
残留電荷による保持力の減衰は期待効果の薄いものとな
り、残留保持力のため静電チャックからのウェハの離脱
時にウェハが飛び跳ねるなど、離脱の信頼性に欠けるも
のとなっている。However, first, the plasma discharge which is not involved in the processing of the wafer, which is the first method, generally requires about 20 sec. It is not enough from the viewpoint of performance, and the second method, mechanical contact of the electrode on the back surface of the wafer, does not sufficiently remove the residual charge,
The attenuation of the holding force due to the residual charge has a small expected effect, and the remaining holding force lacks the reliability of separation, such as the wafer jumping when the wafer is separated from the electrostatic chuck.
【０００４】また、特開平０４−２８２８５１号公報に
おいては、オゾン発生器より発生したオゾンを用い残留
電荷を除去する事が開示されている。この技術はオゾン
発生器より発生したオゾンをウェハ裏面と静電チャック
表面の隙間に回り込ませているので、解離したオゾンに
より残留電荷を除去し一応の効果を奏している。しかし
ながら、この技術においてはオゾン発生器を具備する必
要があるので生産コストの点において高価な装置となっ
てしまうという問題をもたらしている。Japanese Patent Application Laid-Open No. 04-282851 discloses removing residual charges using ozone generated by an ozone generator. According to this technique, ozone generated from an ozone generator is caused to flow into a gap between the back surface of the wafer and the front surface of the electrostatic chuck. However, in this technique, it is necessary to provide an ozone generator, which causes a problem that the apparatus becomes expensive in terms of production cost.
【０００５】本発明の主な目的は、生産性が高く信頼性
も備わった低コストの被処理体の離脱方法および静電チ
ャック装置を提供することにある。It is a primary object of the present invention to provide a low-cost method of releasing a workpiece with high productivity and high reliability, and an electrostatic chuck apparatus.
【０００６】[0006]
【課題を解決するための手段】本発明の被処理体の離脱
方法は、静電チャックに被処理体を保持して被処理体に
加工を施した後に、前記静電チャックと被処理体との間
に形成された隙間に対して、水若しくはアルコ−ル、又
は水若しくはアルコ−ルを含む混合ガスの少なくともい
ずれかを導入して被処理体を静電チャックから離脱する
方法である。また、本発明の静電チャック装置は、被処
理体を静電チャックに保持して被処理体に加工を施すた
めの静電チャック装置であって、前記静電チャックと保
持された被処理体との間に形成された隙間に対して、水
若しくはアルコ−ル、又は水若しくはアルコ−ルを含む
混合ガスの少なくともいずれかが導入されるようにされ
ている装置である。According to the present invention, there is provided a method of detaching an object to be processed, comprising the steps of: holding an object to be processed on an electrostatic chuck; In this method, at least one of water or alcohol, or a mixed gas containing water or alcohol is introduced into the gap formed between them, and the object to be processed is separated from the electrostatic chuck. Further, an electrostatic chuck device of the present invention is an electrostatic chuck device for holding an object to be processed on an electrostatic chuck and performing processing on the object, wherein the object to be processed held by the electrostatic chuck is provided. And at least one of water or alcohol, or a mixed gas containing water or alcohol, is introduced into the gap formed therebetween.
【０００７】[0007]
【発明の実施の形態】本発明の特徴は、静電チャックを
用い、被処理体、例えば半導体製造用基板であるウェハ
等の半導体基板の保持機構において、半導体基板の裏面
と静電チャックとの間の微小隙間に水（Ｈ2Ｏ）または
アルコ−ル（Ｒ−ＯＨ）の少なくともいずれかを導入し
たことにある。水は極性が特に大きいので好ましく、ア
ルコ−ルとしては１気圧で沸点が２００゜Ｃ以下で沸点
が低いほどガス化し易いので取り扱いに有利であり、前
記のＲが炭素数１〜６のアルキル基であるアルコ−ルが
極性が大きいので好ましい。即ち、隙間には、水の蒸
気、アルコ−ルガス、水とアルコ−ルとの混合ガス、水
又はアルコ−ルを含む混合ガス等のいずれかが導入され
ることが好ましい。混合ガス中、水又はアルコ−ルは５
体積％以上、特に２０体積％以上であることが好まし
い。DESCRIPTION OF THE PREFERRED EMBODIMENTS The feature of the present invention is that an electrostatic chuck is used and a mechanism for holding an object to be processed, for example, a semiconductor substrate such as a wafer, is used to hold the back surface of the semiconductor substrate and the electrostatic chuck. small gap to water (H 2 O) or alcohol between - lies in the introduction of at least one of Le (R-OH). Water is preferred because it has a particularly large polarity. As an alcohol, a gas having a boiling point of 200 ° C. or lower at 1 atm and a lower boiling point is more easily gasified, which is advantageous for handling. Is preferred because of its high polarity. That is, it is preferable that any one of water vapor, alcohol gas, a mixed gas of water and alcohol, a mixed gas containing water or alcohol, or the like be introduced into the gap. In the mixed gas, water or alcohol is 5
It is preferably at least 20% by volume, especially at least 20% by volume.
【０００８】図１は、本発明の静電チャック装置の原理
を示す説明図である。例えばウェハは、静電チャック表
面に帯電した電荷により反対の電位に帯電し、電気的に
静電チャック表面への保持力を得ているが、図１に示す
ように、ウェハ１の裏面と静電チャック表面２との間の
隙間１１に、例えば水または水の混合ガス３を導入して
いる。この導入した水または水の混合ガス３は、隙間１
１に導入された後、水酸化イオン４および水素イオン５
に分極し、ウェハ１、静電チャック表面２に帯電した電
荷を打ち消し、ウェハ１および静電チャック表面２を同
電位にし、保持力を失わせる役目を果たす。従って、ウ
ェハ１を静電チャック表面２より離脱する際、静電チャ
ック表面２の残留電荷の影響をなくし、ウェハ１をスム
ーズに離脱できるという効果が得られる。以上の説明で
は導入ガスを水蒸気または水を含む混合ガスとして説明
したが、水または水を含む混合ガスの代わりに、極性の
大きいアルコ−ル（例えば、エタノール）またはアルコ
−ルを含む混合ガスを用いても同様の効果が得られる。FIG. 1 is an explanatory view showing the principle of the electrostatic chuck device of the present invention. For example, the wafer is charged to the opposite potential by the electric charge charged on the surface of the electrostatic chuck, and electrically obtains the holding force on the surface of the electrostatic chuck. As shown in FIG. For example, water or a mixed gas 3 of water is introduced into a gap 11 between the electric chuck surface 2. The introduced water or the mixed gas of water 3
After being introduced into 1, hydroxide ions 4 and hydrogen ions 5
And cancels the electric charges charged on the wafer 1 and the electrostatic chuck surface 2, makes the wafer 1 and the electrostatic chuck surface 2 have the same potential, and serves to lose the holding power. Therefore, when the wafer 1 is detached from the electrostatic chuck surface 2, the effect of eliminating the influence of the residual charge on the electrostatic chuck surface 2 and the wafer 1 can be detached smoothly can be obtained. In the above description, the introduced gas is described as a water vapor or a mixed gas containing water. However, instead of water or a mixed gas containing water, a highly polar alcohol (for example, ethanol) or a mixed gas containing an alcohol is used. The same effect can be obtained by using.
【０００９】図２は、本発明の一実施形態例の静電チャ
ック装置の要部を示す構成図である。該装置は、ウェハ
１を静電チャック６に保持してウェハ１に加工を施すた
めの装置であって、静電チャック６と保持されたウェハ
１との間に形成された隙間１１に対して、水若しくはア
ルコ−ル、又は水若しくはアルコ−ルを含む混合ガスの
少なくともいずれかが導入されるようにされている装置
である。図２に示すように、ウェハ１を保持するための
静電チャック６には、例えば水または水の混合ガス３
を、ウェハ１裏面と静電チャック６の表面２との間の隙
間１１に導入するための配管７が設けられている。本例
の静電チャックは、水または水の混合ガス３を用いて除
電するので、確実に除電されて生産性が高いし、しかも
除電の信頼性も高く、低コストである。FIG. 2 is a configuration diagram showing a main part of an electrostatic chuck device according to an embodiment of the present invention. The apparatus is an apparatus for holding a wafer 1 on an electrostatic chuck 6 and processing the wafer 1, and is configured to remove a gap 11 formed between the electrostatic chuck 6 and the held wafer 1. , Water or alcohol, or a mixed gas containing water or alcohol. As shown in FIG. 2, for example, water or a mixed gas 3 of water is provided on an electrostatic chuck 6 for holding the wafer 1.
Is provided in the gap 11 between the back surface of the wafer 1 and the front surface 2 of the electrostatic chuck 6. In the electrostatic chuck of this example, since static elimination is performed using water or the mixed gas 3 of water, static elimination is surely performed, the productivity is high, the reliability of static elimination is high, and the cost is low.
【００１０】次に、本形態例の静電チャック装置の動作
を図２を参照して説明する。静電チャック６に保持され
たウェハ１の所定の加工、例えば、ドライエッチングが
終了した時点で、配管７を介し水または水の混合ガス３
をウェハ１の裏面と静電チャック６の表面２との隙間１
１に導入する。かかる構成においては、ジョンションラ
−ベック力を利用した静電チャックの場合、静電チャッ
ク６の表面に残留電荷が残り、この残留電荷のためウェ
ハの保持力が存在してしまうところを、本例では水また
は水の混合ガス３を隙間１１に導入したため、静電チャ
ック６の表面電荷とウェハ１の裏面電荷がガス導入とと
もにうち消され、残留電荷のための保持力は存在しな
い。従って、ウェハ１をを静電チャック６から容易に離
脱できるので、本例では、保持力解消のためのウェハ加
工以外の余分な処理は必要としない、という効果がもた
らされる。Next, the operation of the electrostatic chuck device of this embodiment will be described with reference to FIG. When predetermined processing of the wafer 1 held on the electrostatic chuck 6, for example, dry etching is completed, water or a mixed gas 3 of water is passed through the pipe 7.
Is the gap 1 between the back surface of the wafer 1 and the front surface 2 of the electrostatic chuck 6.
Introduce to 1. In such a configuration, in the case of an electrostatic chuck utilizing the junction Labech force, a residual charge is left on the surface of the electrostatic chuck 6 and the presence of a wafer holding force due to the residual charge is reduced by the present invention. In the example, since water or the mixed gas 3 of water is introduced into the gap 11, the surface charge of the electrostatic chuck 6 and the back surface charge of the wafer 1 are eliminated together with the introduction of the gas, and there is no holding force for the residual charge. Therefore, since the wafer 1 can be easily detached from the electrostatic chuck 6, the present embodiment has an effect that no extra processing other than wafer processing for eliminating the holding force is required.
【００１１】図３は、本発明の静電チャック装置の他の
形態例を示す図である。図３に示すように、前述の形態
例で説明した構成に加え、水又は極性の大きいアルコー
ルの少なくともいずれかを含むガス３を隙間１１に対し
て導入する配管７内の圧力を測定する圧力測定子８およ
び、該配管７内を流れるガス３の流量を制御する流量制
御器９を備えている。本形態例では、配管７内の圧力を
一定値に保つため、配管７内の圧力を圧力測定子８によ
り測定し、その規定した所望の圧力になるよう圧力信号
を流量制御器９へ帰還することでガス３の流量を流量制
御器９により制御可能としている。また、制御する規定
の圧力は１０〜２２Ｔｏｒｒ（トル）の範囲が好まし
い。本形態例は、配管７内に導入したガス３の圧力によ
り、ウェハ１が持ち上げられ、また移動してしまう事を
防止できるという新たな効果を奏する。FIG. 3 is a view showing another embodiment of the electrostatic chuck device of the present invention. As shown in FIG. 3, in addition to the configuration described in the above embodiment, a pressure measurement for measuring the pressure in the pipe 7 for introducing the gas 3 containing at least one of water and a highly polar alcohol into the gap 11. And a flow controller 9 for controlling the flow rate of the gas 3 flowing through the pipe 7. In the present embodiment, in order to keep the pressure in the pipe 7 at a constant value, the pressure in the pipe 7 is measured by the pressure gauge 8 and a pressure signal is returned to the flow controller 9 so as to reach the prescribed desired pressure. Thus, the flow rate of the gas 3 can be controlled by the flow rate controller 9. The prescribed pressure to be controlled is preferably in the range of 10 to 22 Torr (Torr). This embodiment has a new effect that the wafer 1 can be prevented from being lifted and moved by the pressure of the gas 3 introduced into the pipe 7.
【００１２】[0012]
【発明の効果】以上説明したように、本発明の被処理体
の離脱方法及び静電チャック装置によれば、静電チャッ
クに保持された被処理体の加工が終了した時点で、被処
理体を静電チャック表面より容易に離脱できる。また、
本発明の静電チャック装置は、生産性が高く信頼性も備
わり低コストである。As described above, according to the method for detaching an object to be processed and the electrostatic chuck apparatus of the present invention, when the processing of the object to be processed held by the electrostatic chuck is completed, the object to be processed is Can be easily detached from the surface of the electrostatic chuck. Also,
The electrostatic chuck device of the present invention has high productivity, high reliability and low cost.
【図１】 本発明の静電チャック装置の原理を説明する
ための図である。FIG. 1 is a view for explaining the principle of the electrostatic chuck device of the present invention.
【図２】 本発明の静電チャック装置の例を示す要部の
断面図である。FIG. 2 is a sectional view of a main part showing an example of the electrostatic chuck device of the present invention.
【図３】 本発明の静電チャック装置の他の例を示す図
である。FIG. 3 is a view showing another example of the electrostatic chuck device of the present invention.
１・・被処理体（ウェハ）、２・・静電チャック表面、
３・・水または水の混合ガス、４・・水酸化イオン、
５・・水素イオン、６・・静電チャック、７・・配管、
８・・圧力測定子、９・・流量制御器、１１・・隙間1. Object to be processed (wafer) 2. Surface of electrostatic chuck
3. water or a mixed gas of water, 4. hydroxide ion,
5 hydrogen ion, 6 electrostatic chuck, 7 piping
8 pressure gauge, 9 flow rate controller, 11 gap
フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/68 B23Q 3/15 H01L 21/3065 Continuation of the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/68 B23Q 3/15 H01L 21/3065
Claims (2)
理体に加工を施した後に、前記静電チャックと被処理体
との間に形成された隙間に対して、水若しくはアルコ−
ル、又は水若しくはアルコ−ルを含む混合ガスの少なく
ともいずれかを導入して被処理体を静電チャックから離
脱することを特徴とする被処理体の離脱方法。After an object to be processed is processed by holding the object to be processed by an electrostatic chuck, water or an alcohol is applied to a gap formed between the electrostatic chuck and the object to be processed.
A process for separating the object from the electrostatic chuck by introducing at least one of a gas and a mixed gas containing water or alcohol.
理体に加工を施すための静電チャック装置であって、前
記静電チャックと保持された被処理体との間に形成され
た隙間に対して、水若しくはアルコ−ル、又は水若しく
はアルコ−ルを含む混合ガスの少なくともいずれかが導
入される静電チャック装置。2. An electrostatic chuck device for holding an object to be processed on an electrostatic chuck and performing processing on the object to be processed, wherein the electrostatic chuck device is formed between the electrostatic chuck and the held object to be processed. An electrostatic chuck device into which at least one of water or alcohol or a mixed gas containing water or alcohol is introduced into the gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9188998A JP2974303B2 (en) | 1998-04-03 | 1998-04-03 | Method of removing workpiece and electrostatic chuck device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9188998A JP2974303B2 (en) | 1998-04-03 | 1998-04-03 | Method of removing workpiece and electrostatic chuck device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11289004A JPH11289004A (en) | 1999-10-19 |
| JP2974303B2 true JP2974303B2 (en) | 1999-11-10 |
Family
ID=14039134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9188998A Expired - Fee Related JP2974303B2 (en) | 1998-04-03 | 1998-04-03 | Method of removing workpiece and electrostatic chuck device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2974303B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9130000B2 (en) | 2008-09-30 | 2015-09-08 | Mitsubishi Heavy Industries | Wafer bonding device and wafer bonding method |
| JPWO2020017314A1 (en) * | 2018-07-19 | 2020-12-17 | ボンドテック株式会社 | Wafer bonding equipment |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003077993A (en) * | 2001-08-30 | 2003-03-14 | Nec Yamagata Ltd | Wafer holder and suction releasing method of wafer |
| JP4938352B2 (en) * | 2006-05-17 | 2012-05-23 | 株式会社ディスコ | Electrostatic chuck table mechanism |
| US8270142B2 (en) * | 2008-12-10 | 2012-09-18 | Axcelis Technologies, Inc. | De-clamping wafers from an electrostatic chuck |
| CN108493103A (en) * | 2018-03-29 | 2018-09-04 | 上海华力微电子有限公司 | Wafer processing method |
| US20220390850A1 (en) * | 2019-11-14 | 2022-12-08 | Asml Netherlands B.V. | Substrate support, lithographic apparatus, method for manipulating charge distribution and method for preparing a substrate |
-
1998
- 1998-04-03 JP JP9188998A patent/JP2974303B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9130000B2 (en) | 2008-09-30 | 2015-09-08 | Mitsubishi Heavy Industries | Wafer bonding device and wafer bonding method |
| JPWO2020017314A1 (en) * | 2018-07-19 | 2020-12-17 | ボンドテック株式会社 | Wafer bonding equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11289004A (en) | 1999-10-19 |
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