WO2001020400A1 - Photomasque de similigravure a decalage de phase et plaques pour la fabrication de photomasque de similigravure a decalage de phase - Google Patents
Photomasque de similigravure a decalage de phase et plaques pour la fabrication de photomasque de similigravure a decalage de phase Download PDFInfo
- Publication number
- WO2001020400A1 WO2001020400A1 PCT/JP2000/006038 JP0006038W WO0120400A1 WO 2001020400 A1 WO2001020400 A1 WO 2001020400A1 JP 0006038 W JP0006038 W JP 0006038W WO 0120400 A1 WO0120400 A1 WO 0120400A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- atom
- tantalum
- halftone
- film
- shift
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Definitions
- This translation relates to a photomask used for the LS1 high-density ⁇ joint and a blank for a photomask used to form the photomask. It is used as a blank for halftone shift photomasks for use in phase shift masks. Background technology
- LSI circuits use photomasks, so-called lithography
- FIG. 7 is a diagram showing the principle of halftone ⁇ -eye shift lithography
- FIG. FIG. 7 (a) and 8 (a) show the cross section of the photomask ⁇
- FIGS. 7 (b) and 8 (b) show the amplitude of light on the photomask
- FIGS. 7 (c) and 8 (c) ) Indicates the amplitude of light on ⁇ ⁇
- FIG. 7 (d) and FIG. 8 (d) indicate the light intensity on ⁇ ⁇ , respectively, 4 1 1 and 4 2 1 are transparent, and 4 2 2 are 100% shielding 4 1 2 is a halftone iiffi shift 4 13 and 4 2 3 are ⁇ !
- the half-tone first shift film is a film that has a function of turning the fine particles of the dew to the fine lines of the dew passing through the same 3 ⁇ 4m and stopping the transport thereof. It is formed by layers or multilayers. As shown in FIG. 8 (a), 100% of chromium or the like is formed on * .sub.421 of quartz glass or the like to obtain a desired film. It only forms the evening, and the cloth on the ⁇ ⁇ ⁇ ha—spreads its hem and spreads as shown in Fig. 8 (d).
- ⁇ is inversely inverted between the light that has been formed on the halftone fine shift film 4 1 2 which is a semi-transparent film and the light that has passed through the opening thereof.
- the ⁇ of the pattern 3 ⁇ 4 ⁇ portion on the wafer becomes 0, and it is possible to suppress the spread of the skirt, so that the solution can be [SLh].
- the power of the half-tone phase shift film is the power that can be achieved by the PVD method and the CVD method.
- the refraction of the film, the accuracy and stability of the yeast are determined by gmr per s * 6.
- the Butter Ninkin of the Item Shift Photo Mask :! Reactive ion etching dry etching is mainly used for the process of etching the shift film on the sickle.
- the power can be stiffened to increase the -separation.
- the age of the halftone translating film which consists of tantalum, tantalum oxide, tantalum nitride, and tantalum sultanate, tantalum, tantalum, tantalum nitride
- the fine difference of monkey 2 4 8 1 13 ⁇ 4 o is set to ⁇ , 3 ⁇ 4 ⁇ is less than i%, it is the ft® value of it »
- Fig. 9 shows the relationship between the richness of tantalum nitride and the transposition at 248 nm of pure tantalum, which were combined by the epsilon sputtering method in g3 ⁇ 4sTfflm of pure tantalum.
- the disparity is il ⁇ in proportion to the rich i 3 ⁇ 4 mouth, and at the same time is' republic
- the transversal at M 248 nm was set to 180 ⁇ , and 1 to 20% of the desired 3 » the rate at was 5 o% jiO :, and the prevalence of t3 ⁇ 4a « outside the mask was ⁇ It has a mouth that it can be placed in place or dimensionally.
- BI10 shows the freshness and inversion of the acid of tantalum that was fiber woven by SIS sputtering in ⁇ 3 ⁇ 1 of pure tantalum. As shown in FIG.
- the tantalum acid has a 248 nm displacement force at 81 nm from 180 °, or 13%, which is in ISffl, which can be used as an iffl shift film.
- FIG. 11 shows tantalum acid of 8 lnm o ⁇ ⁇
- FIG. 12 shows ⁇ . As shown in FIG.
- the position of the mask that is used in the masking process is designed to emit light from 365 nm to 633 nm. ing.
- the power of the shielding or halftone eye-shifting film is required, and it is required that the power is at least 50% or less in the wavelength range from 365 nm to 488 nm. It is. i: The strength of the tantalum oxide film, the age of the half-tone first-order shift photomask, and the ability to perform precise measurements when measuring, ⁇ was unable to perform the necessary tasks.
- the tantalum acid ⁇ becomes the key difference by using the ratio of tantalum to the job or by encouraging the material, and the nominal difference becomes 180 ° at »248 nm It is possible to control the ⁇ ⁇ S ⁇ that has « « ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ 4 ⁇ 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 nm force, nm ⁇ of 4888 nm »cannot be less than 50%.
- the tantalum oxide, the tantalum nitride, and the tantalum simplicity are patterned by a transversal shift photomask. Fluorine is used in the dry etching process. The translucent fiber consisting of ⁇ was etched away. The power of subtending the difference in power and the ability to precisely ⁇ -leg was ⁇ . Disclosure of the invention
- the present invention has been made in view of such a situation, and its purpose is to accurately and accurately adjust the difference by 180 ° in the open air, and to achieve the desired 1 to 20% Furthermore, halftone eye-shifting photomasks and halftone denominator-shifting photomasks, which can be used to adjust the photomask, so that the photomask roll can be reduced to ⁇ ⁇ ⁇ It is to add blanks.
- the purpose of the present invention is to provide a half-tone shift photomask of the present invention, which has at least two layers in a half-tone feffi-shift mask having a half-tone eye shift film including at least tantalum, wisteria, and citrus on a transparent substrate. It is a matter of multi-layer ⁇ ! ⁇ of different films of JiLh.
- the film with ⁇ ⁇ ⁇ in each layer is the Tantalum atoms are included in '100' ⁇ ⁇ ⁇ ⁇ ⁇ with respect to tantalum atoms ⁇ fcfc ⁇ 'between tantalum atoms and tantalum atoms
- tantalum H ⁇ ® atoms are less than 100 It is a film that contains 50 to 250 nm boat atoms and 1 to 200 nm atoms with respect to 100% of tantalum atoms, «atoms and atoms, and « b Layers or layers can be ⁇ S, and each ⁇ ?
- the tantalum atom is less than 100, the tantalum atom is less than 100, the tantalum atom is 100% or less, and the tantalum atom is 100% or less.
- the atomic layer must contain 100% of the atomic energy, and the tantanole atom between the tantanole atom and the atoms other than tantalum must be 100%.
- ⁇ atoms are '50 to 250, and atoms are '1 to 200'
- the parallax at 4248 nm is 180 due to the presence of the ⁇ / 1 membrane.
- ⁇ ⁇ of 488 nm or less can be reduced to 50% or less, and the reflectivity of 248 nm can be reduced to 20% or less. You can power.
- fc of tantalum atom and tantalum » ⁇ atom & tantalum atom was set to 100 3 ⁇ 4 ⁇ tantanole atom; film less than 100 is transparent» hi « « ls lacking second layer J »D
- the tantalum atom and the tantalum atom are «fc o ⁇ 100 with the tantalum atom set to 100> and a film with less than 100 or less tantalum atoms.
- the etching proceeds with a transparent etching gas.
- the total tantalum atom of the ⁇ -alpha transparent S 1 ⁇ is set to 100, and the tantalum atom is set to 100.
- one layer of etching studs is formed on the transparent Sfch.
- the hole shift film is patterned. Even if a gas or fluorine-based gas is used, the transparent material will not be etched, and will not be etched. .
- the etching stopper layer is provided on an etching layer 1 * ⁇ such as acid or pho- tonium, and has a 3 ⁇ 4 ⁇ ⁇ force at 248 nm. It is desirable to use a material that does not decrease even if the nm is increased.
- the present invention is at least two layers or more in a halftone phase shift photomask and a blank having a halftone shift film containing at least tantalum, phosphorus, and silicon.
- the transversal at 248 nm is set to 180 °, and 3 ⁇ 4 ⁇ is set to 1 to 20%.
- the tantalum atom and the tantalum atom are l3 ⁇ 43 ⁇ 4t ⁇ ', and the tantalum atom is 100: the tantalum atom is less than 100, but the tantalum atom and the acid Wtb ⁇ 'with elemental atoms, 100% of tantalum atoms contain 100 O SLh, or «fcb ⁇ between tantalum atoms and atoms other than tantalum ', With the tantalum atom being 100, the tantalum atom is
- the tantalum atom, the wisteria atom, and the ⁇ atom are t6, the tantalum atom is 100, the 3 ⁇ 4r ⁇ atom is '50 to 250, and the atom is 1 to
- the included membrane is OTted: by having an ffit, the ftffl difference at 248 nm is brought to 180 °, and is brought to 1-20% of the desired value, and »4 8
- 3 ⁇ 4 ⁇ of 8 nm or less can be reduced to 50% or less, and the reflectance of »248 nm can be reduced to 20% or less. Therefore, it is possible to reduce an eye shift photomask during exposure in one lithography step and multiple ffeSL described in Stepper Lense, and to further increase ⁇ S.
- an eye shift photomask whose imperfect difference is emperor ⁇ tt degrees can be used. ⁇ brief description
- FIG. 1 is a diagram for explaining a process of obtaining a blank for a halftone fine shift mask of Example 1 of Hffi of the present invention, and a process of obtaining a zero-tone fine shift mask by applying this force. is there.
- FIG. 2 is a view for explaining a step of forming a blank for a halftone ⁇ -eye shift mask of Example 2 of the present invention.
- FIG. 3 is a view for explaining a step of $ 3 ⁇ 4t of a blank for a half-toned first shift mask of Example 3 of the present invention.
- FIG. 4 is a diagram showing the rate of blanks for a halftone fi ⁇ shift mask in HiS Example 1.
- FIG. 5 is a view showing a rate curve of a blank for a halftone shift photomask of Example 2.
- FIG. 6 is a diagram showing the half-tone ⁇ Sli ratio of shift photomask blank ⁇ of Example 2.
- FIG. 7 is a diagram showing an example of halftone position shift lithography.
- FIG. 8 is a diagram showing a lithography method of FIG.
- FIG. 10 is a diagram showing tantalum acidity and transitivity, and tanoshima.
- Fig. 11 is a diagram showing the ⁇ » ⁇ spring of tantalum acid of 81 nm thick.
- Figure 12 is a diagram showing an 81 nm solution of tantalic acid ⁇ feSli.
- a tantalum-based film 102 is used as the first layer, and then, two layers of a film 103 mainly composed of tantalum and phosphorus were sculpted as a second layer to obtain a halftone shift photomask blank 104 having two layers 3 ⁇ 4i. 1st layer
- the value of l in the first layer which is ⁇ , was 15 nm, and the value of 2 in the second layer was 62 nm.
- the M ⁇ of the nominal shift film obtained by ⁇ ⁇ ⁇ was analyzed by X Izumi photoelectric 3 ⁇ 4 ⁇
- the first layer had 16 tantalum atoms for 100 tantalum atoms
- the second layer had tantalum atoms.
- 100 atoms were analyzed as 150 out of 100.
- the analysis by X-ray photoelectron was performed using VG SCIENTIFIC ESCALAB 210, and after etching with Ar ion beam, each layer was analyzed.
- a description will be given of a process of patterning the blank 104 for a halftone phase shift photomask to enhance the photomask. As shown in FIG.
- the current current ⁇ is calculated by the special current ZED 500, and the desired resist pattern as shown in Fig. 1 (c) is obtained.
- Get 106 Using the resist pattern 106 as a mask, inductive plasma etching is performed by the following method »to form a halftone shift film. Perform dry etching.
- the resist was removed by applying ⁇ to ozone while irradiating the quake to obtain a halftone shifted shift photomask 107 as shown in FIG. 1 (d).
- the ⁇ iffl difference of the halftone fiZffl shift photomask 107 was settled with the ⁇ ! ⁇ ⁇ TM shift mask eyepiece ( ⁇ ⁇ ⁇ 2480 manufactured by Laser I-Tech Co., Ltd.), it was 48 nm. Was 17.9.8 °.
- the ⁇ -sho shift photomask obtained in this way has a precision of about 3 ⁇ 42 4 8 1 ⁇ 1 or around 180 ° Km. Since it is 0% or less, cats with the maximum / ⁇ were possible with the photomask outside and dimensions ⁇ ⁇ ⁇ . Also, in the example, the aim was to aim at the sharpest 6% of the wavelength at 248 nm, or to make different shift masks, the first layer and the second layer should be By changing the angle, the shift can be obtained with a desired shift and a shift shift of 180 °.
- the first and second masks are etched first.
- the second layer 103 is ⁇ 15 of ⁇ 15, and when etching the tantalum-based film of the lower first layer 102 to be etched next, it is difficult to use gas to etch. Since the transparent fiber 101 is not etched, it is possible to search for finer and finer differences.
- the lower level of the etching is as I am.
- Etchinda device induction type plasma etcher
- Example 2 of the blank for a halftone shift photomask and the halftone shift photomask of the present invention will be described with reference to FIG.
- a sputtering method is used on a well-polished alloy 01 by the following method.
- a film 2 mainly composed of tantalum is used as the first layer.
- a film 203 mainly composed of tantalum is used as the second layer.
- a film 204 mainly composed of tantalum and ⁇ A blank 205 for a halftone shift photomask having three layers was obtained.
- J ⁇ of the first layer to be ⁇ was set to 5 Onm, 15 nm for the second layer, and 12 nm for ⁇ of the third layer.
- the shift photomask obtained in this way has a 248g248 nm fiffi difference?
- the cans are also fine Since it was 0% or less, it was possible to place a bell at a maximum of 3 ⁇ 4g on the outside and dimension measurement of the photomask, as in Male Example 1. Also, in the example, iSi ⁇ S at a wavelength of 248 nm also aims at a sharp 6% force. By changing the thickness of the second layer or the third layer, it is possible to obtain a fiffi shift photomask with a desired parallax of 180 °, as in Example 1. It is. It is obvious that the excitation rate at 248 nm of wisteria is 14.8%, which means that it is possible to increase ffiE in the photolithography process. Instead of a film made of Lin, a film made mainly of tantalum, a touch, and a cucumber can be used, but one example of the same effect is ⁇ . 3rd layer
- a 150 nm thick film of ⁇ S tantanole is formed, and a film of tantalum, wisteria and syrup made of _h! S rice cake is grown in a 28 nm hall, and XH photoelectric is «
- 136 ⁇ ⁇ ⁇ atoms and 17 nitrogen atoms were found for 100 tantalum atoms.
- the analysis with X-ray photoelectrons was performed using VG SCIENTIFIC VIEW SCALAB 210, and was analyzed after etching with Ar ion beam.
- Example 3 of the blank for the half-tone shift photomask and the half-tone shift photomask of the present invention will be described with reference to FIG.
- the surface of the well-polished surface 301 is subjected to the following method using a silicon ring method.
- an acid film is mainly used as the first layer.
- the etching stopper layer 302 is formed into a film, and the second layer is a film 303 mainly composed of tantalum and ⁇ 6, then the third layer is a film 304 mainly composed of tantalum, and then the fourth layer is mainly a tantalum film.
- a film 305 made of tanta nore and wisteria was formed, and a blank 306 for a half-tone mesh shift photomask separated four layers was obtained.
- the thickness of the first layer is set to 50 nm
- the second layer is set to 50 nm
- the expansion of the third layer is set to 15 nm
- the increase of the fourth layer is set to 12 nm.
- the fine shift film obtained at ⁇ IS is the same as in Difficult Example 2.
- the process of applying the halftone fiffl shift mask blanks 306 to the halftone translation shift photomask 307 in FIG. 3B is the same as in the difficult example 1.
- the fine difference of the halftone deemed shift photomask 306 was ⁇ ⁇ d by a phase shift mask translator of Tf3 ⁇ 4 (MPM248 manufactured by Lasertec Co., Ltd.)
- the parallax at 248 nm was 180.1. °.
- the eye-shift photomask obtained in this manner has a ⁇ 248 difference of ° M 248 nm, which is precisely 180 °, and is less than 88 ⁇ ⁇ ⁇ » ⁇ 50% or less.
- ° M 248 nm As in the case of male example 1, it was possible to perform the maximum inspection at the position t3 ⁇ 4 ⁇ and the dimension J ⁇ outside the photomask.
- ' ⁇ at 248 nm is the most “transient shift photomask with the aim of the sharpest 6%: ⁇ is the first-layer enzyme.
- the wavelength at 248 nm is 1 to 13%. From 65 nm to 63 33 nm, the power can be reduced to 50% or less, and it becomes the core for improving the quality of the photomask. Furthermore, since the excitation rate at «2 4 8 11 1 « can be set to 20% or less, L ⁇ and ft, which are less susceptible to multiple I® in a single photolithography process, are excellent Able to obtain a halftone inverted shift photomask.
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Preparing Plates And Mask In Photomechanical Process (AREA)
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Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/830,598 US6764792B1 (en) | 1999-09-09 | 2000-09-06 | Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it |
DE60019917T DE60019917T2 (de) | 1999-09-09 | 2000-09-06 | Halbtonphasenschiebermaske und maskenrohling |
EP00956950A EP1176466B1 (en) | 1999-09-09 | 2000-09-06 | Halftone phase shift photomask and photomask blank |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25574699A JP2001083687A (ja) | 1999-09-09 | 1999-09-09 | ハーフトーン位相シフトフォトマスク及びこれを作製するためのハーフトーン位相シフトフォトマスク用ブランクス |
JP11/255746 | 1999-09-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001020400A1 true WO2001020400A1 (fr) | 2001-03-22 |
Family
ID=17283066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2000/006038 WO2001020400A1 (fr) | 1999-09-09 | 2000-09-06 | Photomasque de similigravure a decalage de phase et plaques pour la fabrication de photomasque de similigravure a decalage de phase |
Country Status (7)
Country | Link |
---|---|
US (1) | US6764792B1 (ja) |
EP (1) | EP1176466B1 (ja) |
JP (1) | JP2001083687A (ja) |
KR (1) | KR100680684B1 (ja) |
DE (1) | DE60019917T2 (ja) |
TW (1) | TW440745B (ja) |
WO (1) | WO2001020400A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1286217A2 (en) | 2001-06-26 | 2003-02-26 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blanks, their manufacture and use |
Families Citing this family (13)
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JP4490598B2 (ja) * | 2001-03-30 | 2010-06-30 | 株式会社日立ハイテクノロジーズ | 表面検査装置 |
US6806095B2 (en) * | 2002-03-06 | 2004-10-19 | Padmapani C. Nallan | Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers |
US6855463B2 (en) * | 2002-08-27 | 2005-02-15 | Photronics, Inc. | Photomask having an intermediate inspection film layer |
JP4525893B2 (ja) * | 2003-10-24 | 2010-08-18 | 信越化学工業株式会社 | 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法 |
JP4535243B2 (ja) * | 2004-05-11 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 位相シフトマスクの製造方法 |
US20060222961A1 (en) * | 2005-03-31 | 2006-10-05 | Pei-Yang Yan | Leaky absorber for extreme ultraviolet mask |
US8435704B2 (en) | 2010-03-30 | 2013-05-07 | Hoya Corporation | Mask blank, transfer mask, and methods of manufacturing the same |
JP5950430B2 (ja) * | 2011-09-15 | 2016-07-13 | Hoya株式会社 | マスクブランク、多階調マスクおよびそれらの製造方法 |
JP6389375B2 (ja) * | 2013-05-23 | 2018-09-12 | Hoya株式会社 | マスクブランクおよび転写用マスク並びにそれらの製造方法 |
US9726972B2 (en) | 2013-09-10 | 2017-08-08 | Hoya Corporation | Mask blank, transfer mask, and method for manufacturing transfer mask |
JP6891099B2 (ja) * | 2017-01-16 | 2021-06-18 | Hoya株式会社 | 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
JP7126836B2 (ja) * | 2017-03-28 | 2022-08-29 | Hoya株式会社 | 位相シフトマスクブランク及びそれを用いた位相シフトマスクの製造方法、並びにパターン転写方法 |
KR20200128021A (ko) * | 2018-03-14 | 2020-11-11 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 |
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JPH06282063A (ja) * | 1993-03-26 | 1994-10-07 | Hoya Corp | ハーフトーン型位相シフトマスク |
JPH07168343A (ja) * | 1993-10-08 | 1995-07-04 | Dainippon Printing Co Ltd | 位相シフトマスクおよびその製造方法 |
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JPH1078647A (ja) * | 1996-09-03 | 1998-03-24 | Toshiba Corp | 露光用マスクの位相検査方法 |
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JP3339649B2 (ja) * | 1993-07-30 | 2002-10-28 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスク用ブランクスの製造方法、及び、ハーフトーン位相シフトフォトマスクの製造方法 |
JP3484548B2 (ja) * | 1994-03-16 | 2004-01-06 | 大日本印刷株式会社 | 上シフター型位相シフトフオトマスク用ブランクス及び上シフター型位相シフトフオトマスクとそれらの製造方法 |
US5635315A (en) * | 1995-06-21 | 1997-06-03 | Hoya Corporation | Phase shift mask and phase shift mask blank |
JP2996613B2 (ja) * | 1995-12-27 | 2000-01-11 | ホーヤ株式会社 | 位相シフトマスクブランク及び位相シフトマスクの製造方法 |
JPH10104821A (ja) * | 1996-09-27 | 1998-04-24 | Dainippon Printing Co Ltd | フォトマスク及びその製造方法 |
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-
1999
- 1999-09-09 JP JP25574699A patent/JP2001083687A/ja active Pending
-
2000
- 2000-09-06 KR KR1020017005778A patent/KR100680684B1/ko not_active IP Right Cessation
- 2000-09-06 US US09/830,598 patent/US6764792B1/en not_active Expired - Fee Related
- 2000-09-06 EP EP00956950A patent/EP1176466B1/en not_active Expired - Lifetime
- 2000-09-06 DE DE60019917T patent/DE60019917T2/de not_active Expired - Fee Related
- 2000-09-06 WO PCT/JP2000/006038 patent/WO2001020400A1/ja active IP Right Grant
- 2000-09-08 TW TW089118426A patent/TW440745B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06175346A (ja) * | 1992-12-03 | 1994-06-24 | Hoya Corp | 位相シフトマスクの製造方法及び位相シフトマスクブランク |
JPH06282063A (ja) * | 1993-03-26 | 1994-10-07 | Hoya Corp | ハーフトーン型位相シフトマスク |
US5538816A (en) * | 1993-04-09 | 1996-07-23 | Dai Nippon Printing Co., Ltd. | Halftone phase shift photomask, halftone phase shift photomask blank, and methods of producing the same |
JPH07168343A (ja) * | 1993-10-08 | 1995-07-04 | Dainippon Printing Co Ltd | 位相シフトマスクおよびその製造方法 |
JPH07219204A (ja) * | 1994-01-28 | 1995-08-18 | Hoya Corp | ハーフトーン型位相シフトマスク及びその製造方法並びにパターン転写方法 |
JPH1078647A (ja) * | 1996-09-03 | 1998-03-24 | Toshiba Corp | 露光用マスクの位相検査方法 |
Non-Patent Citations (1)
Title |
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See also references of EP1176466A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1286217A2 (en) | 2001-06-26 | 2003-02-26 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blanks, their manufacture and use |
EP1286217A3 (en) * | 2001-06-26 | 2003-05-07 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blanks, their manufacture and use |
Also Published As
Publication number | Publication date |
---|---|
US6764792B1 (en) | 2004-07-20 |
EP1176466A4 (en) | 2003-03-19 |
KR20010089414A (ko) | 2001-10-06 |
TW440745B (en) | 2001-06-16 |
DE60019917T2 (de) | 2005-09-29 |
KR100680684B1 (ko) | 2007-02-09 |
EP1176466B1 (en) | 2005-05-04 |
EP1176466A1 (en) | 2002-01-30 |
JP2001083687A (ja) | 2001-03-30 |
DE60019917D1 (de) | 2005-06-09 |
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