WO2001004962A3 - Forming contacts on semiconductor substrates for radiation detectors and imaging devices - Google Patents

Forming contacts on semiconductor substrates for radiation detectors and imaging devices Download PDF

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Publication number
WO2001004962A3
WO2001004962A3 PCT/EP2000/006014 EP0006014W WO0104962A3 WO 2001004962 A3 WO2001004962 A3 WO 2001004962A3 EP 0006014 W EP0006014 W EP 0006014W WO 0104962 A3 WO0104962 A3 WO 0104962A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
forming
imaging devices
semiconductor substrates
Prior art date
Application number
PCT/EP2000/006014
Other languages
French (fr)
Other versions
WO2001004962A2 (en
Inventor
Konstantinos Evange Spartiotis
Hannele Heikkinen
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simage Oy filed Critical Simage Oy
Priority to AU66886/00A priority Critical patent/AU6688600A/en
Publication of WO2001004962A2 publication Critical patent/WO2001004962A2/en
Publication of WO2001004962A3 publication Critical patent/WO2001004962A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14696—The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

A method, suitable for forming metal contacts (31) on a semiconductor substrate (1) at positions for defining radiation detector cells, includes the steps of forming one or more layers of material (11, 12) on a surface of the substrate with openings (23) to the substrate surface at the contact positions; forming a layer of metal (24) over the layer(s) of material and the openings; and removing metal at (28) overlying the layer(s) of material to separate individual contacts. Optionally, a passivation layer (11) to be left between individual contacts on the substrate surface, may be applied during the method. A method according to the invention prevents etchants used for removing unwanted gold (or other contact matter) coming into contact with the surface of the substrate (e.g. CdZnTe) and causing degradation of the resistive properties of that substrate. The product of the method and uses thereof are also described.
PCT/EP2000/006014 1999-07-13 2000-06-28 Forming contacts on semiconductor substrates for radiation detectors and imaging devices WO2001004962A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU66886/00A AU6688600A (en) 1999-07-13 2000-06-28 Forming contacts on semiconductor substrates for radiation detectors and imagingdevices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9916404.8 1999-07-13
GB9916404A GB2352084B (en) 1999-07-13 1999-07-13 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Publications (2)

Publication Number Publication Date
WO2001004962A2 WO2001004962A2 (en) 2001-01-18
WO2001004962A3 true WO2001004962A3 (en) 2001-06-28

Family

ID=10857160

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2000/006014 WO2001004962A2 (en) 1999-07-13 2000-06-28 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Country Status (3)

Country Link
AU (1) AU6688600A (en)
GB (1) GB2352084B (en)
WO (1) WO2001004962A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL2982709T3 (en) 2014-08-07 2017-12-29 Telene Sas Curable composition and molded article comprising the composition

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02232978A (en) * 1989-03-07 1990-09-14 Matsushita Electric Ind Co Ltd Semiconductor radiation detector and manufacture thereof
EP0415541A1 (en) * 1989-07-29 1991-03-06 Shimadzu Corporation Semiconductor-based radiation image detector and its manufacturing method
JPH0832101A (en) * 1994-07-15 1996-02-02 Toshiba Corp Hgcdte semiconductor device and its manufacture
WO1997020342A1 (en) * 1995-11-29 1997-06-05 Simage Oy Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US5888892A (en) * 1995-05-24 1999-03-30 Sony Corporation Metal layer pattern forming method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors
US4541169A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
US4606998A (en) * 1985-04-30 1986-08-19 International Business Machines Corporation Barrierless high-temperature lift-off process
DE3876109D1 (en) * 1987-02-06 1993-01-07 Siemens Ag MONOLITHICALLY INTEGRATED WAVE WIRE PHOTODIODE COMBINATION.
JPS63276230A (en) * 1987-05-08 1988-11-14 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02232978A (en) * 1989-03-07 1990-09-14 Matsushita Electric Ind Co Ltd Semiconductor radiation detector and manufacture thereof
EP0415541A1 (en) * 1989-07-29 1991-03-06 Shimadzu Corporation Semiconductor-based radiation image detector and its manufacturing method
JPH0832101A (en) * 1994-07-15 1996-02-02 Toshiba Corp Hgcdte semiconductor device and its manufacture
US5888892A (en) * 1995-05-24 1999-03-30 Sony Corporation Metal layer pattern forming method
WO1997020342A1 (en) * 1995-11-29 1997-06-05 Simage Oy Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 546 (E - 1008) 4 December 1990 (1990-12-04) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 06 28 June 1996 (1996-06-28) *

Also Published As

Publication number Publication date
WO2001004962A2 (en) 2001-01-18
GB9916404D0 (en) 1999-09-15
GB2352084B (en) 2002-11-13
AU6688600A (en) 2001-01-30
GB2352084A (en) 2001-01-17

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