EP1102333A3 - Infra red sensor and method for fabricating the same - Google Patents
Infra red sensor and method for fabricating the same Download PDFInfo
- Publication number
- EP1102333A3 EP1102333A3 EP00310337A EP00310337A EP1102333A3 EP 1102333 A3 EP1102333 A3 EP 1102333A3 EP 00310337 A EP00310337 A EP 00310337A EP 00310337 A EP00310337 A EP 00310337A EP 1102333 A3 EP1102333 A3 EP 1102333A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- diaphragm
- forming
- film
- fabricating
- thermoelectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000000463 material Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990051994A KR100313909B1 (en) | 1999-11-22 | 1999-11-22 | IR sensor and method for fabricating the same |
KR9951994 | 1999-11-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1102333A2 EP1102333A2 (en) | 2001-05-23 |
EP1102333A3 true EP1102333A3 (en) | 2004-01-02 |
Family
ID=19621250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00310337A Withdrawn EP1102333A3 (en) | 1999-11-22 | 2000-11-21 | Infra red sensor and method for fabricating the same |
Country Status (3)
Country | Link |
---|---|
US (1) | US6518597B1 (en) |
EP (1) | EP1102333A3 (en) |
KR (1) | KR100313909B1 (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6534826B2 (en) | 1999-04-30 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
GB0118678D0 (en) * | 2001-08-01 | 2001-09-19 | Qinetiq Ltd | Random access decoder |
US6828172B2 (en) | 2002-02-04 | 2004-12-07 | Delphi Technologies, Inc. | Process for a monolithically-integrated micromachined sensor and circuit |
US7205675B2 (en) | 2003-01-29 | 2007-04-17 | Hewlett-Packard Development Company, L.P. | Micro-fabricated device with thermoelectric device and method of making |
DE602004015449D1 (en) * | 2003-05-23 | 2008-09-11 | Koninkl Philips Electronics Nv | METHOD FOR PRODUCING A THERMOELECTRIC DEVICE |
US20050035773A1 (en) * | 2003-08-11 | 2005-02-17 | Symyx Technologies, Inc. | Apparatus and method for detecting thermoelectric properties of materials |
DE102004030043B4 (en) * | 2004-06-22 | 2006-05-04 | Infineon Technologies Ag | Thermal element production. used in semiconductor process technology, comprises forming layer sequence elements by applying an electrically insulating layer on a substrate and further processing |
KR100894500B1 (en) * | 2005-05-12 | 2009-04-22 | 고려대학교 산학협력단 | Thermopile sensor and method for preparing the same |
DE102005040236B3 (en) * | 2005-08-24 | 2007-01-11 | Therm-O-Tech Gmbh | Thermoelectric generator electrical energy source has thermoelectric elements integrated around silicon base body with central hole for thermal input |
JP2009538425A (en) * | 2006-05-23 | 2009-11-05 | リージェンツ オブ ザ ユニバーシティ オブ ミネソタ | Thermal detector and infrared sensing method |
US7737394B2 (en) * | 2006-08-31 | 2010-06-15 | Micron Technology, Inc. | Ambient infrared detection in solid state sensors |
JP2010512507A (en) * | 2006-12-08 | 2010-04-22 | リージェンツ オブ ザ ユニバーシティ オブ ミネソタ | Detection beyond standard radiated noise limits using emissivity reduction and optical cavity coupling |
WO2010033142A1 (en) * | 2008-05-30 | 2010-03-25 | Regents Of The University Of Minnesota | Detection beyond the standard radiation noise limit using spectrally selective absorption |
WO2011040634A1 (en) * | 2009-10-02 | 2011-04-07 | イマジニアリング株式会社 | Heat flux measurement device, and heat flux measurement method |
DE102010022668B4 (en) * | 2010-06-04 | 2012-02-02 | O-Flexx Technologies Gmbh | Thermoelectric element and module comprising a plurality of such elements |
KR101227242B1 (en) | 2011-02-01 | 2013-01-28 | 안동대학교 산학협력단 | Method for fabricating thermopile and infrared sensor using SOI substrate |
US20130062720A1 (en) * | 2011-03-04 | 2013-03-14 | Texas Instruments Incorporated | Extended area cover plate for integrated infrared sensor |
DE102011054739A1 (en) * | 2011-10-24 | 2013-04-25 | O-Flexx Technologies Gmbh | Thermocouple and manufacturing process |
US9219185B2 (en) | 2013-12-19 | 2015-12-22 | Excelitas Technologies Singapore Pte. Ltd | CMOS integrated method for the fabrication of thermopile pixel with umbrella absorber on semiconductor substrate |
US9373772B2 (en) | 2014-01-15 | 2016-06-21 | Excelitas Technologies Singapore Pte. Ltd. | CMOS integrated method for the release of thermopile pixel on a substrate by using anisotropic and isotropic etching |
US9324760B2 (en) * | 2014-01-21 | 2016-04-26 | Excelitas Technologies Singapore Pte. Ltd | CMOS integrated method for fabrication of thermopile pixel on semiconductor substrate with buried insulation regions |
US10147906B2 (en) * | 2014-02-06 | 2018-12-04 | Emagin Corporation | High efficacy seal for organic light emitting diode displays |
CN111392690B (en) * | 2020-03-20 | 2023-04-07 | 北京航空航天大学杭州创新研究院 | Pressure sensing system based on thin film thermoelectric device power supply and preparation method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02205729A (en) * | 1989-02-03 | 1990-08-15 | Nec Corp | Infrared-ray sensor |
US5100479A (en) * | 1990-09-21 | 1992-03-31 | The Board Of Regents Acting For And On Behalf Of The University Of Michigan | Thermopile infrared detector with semiconductor supporting rim |
US5393351A (en) * | 1993-01-13 | 1995-02-28 | The United States Of America As Represented By The Secretary Of Commerce | Multilayer film multijunction thermal converters |
JPH1151762A (en) * | 1997-08-06 | 1999-02-26 | Toshiba Corp | Infrared solid-state image pick-up device and its manufacture |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2811709B2 (en) * | 1989-02-03 | 1998-10-15 | 日本電気株式会社 | Infrared sensor |
JP2560824B2 (en) * | 1989-02-20 | 1996-12-04 | 日本電気株式会社 | Infrared sensor manufacturing method |
US5156688A (en) * | 1991-06-05 | 1992-10-20 | Xerox Corporation | Thermoelectric device |
-
1999
- 1999-11-22 KR KR1019990051994A patent/KR100313909B1/en not_active IP Right Cessation
-
2000
- 2000-11-16 US US09/712,933 patent/US6518597B1/en not_active Expired - Lifetime
- 2000-11-21 EP EP00310337A patent/EP1102333A3/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02205729A (en) * | 1989-02-03 | 1990-08-15 | Nec Corp | Infrared-ray sensor |
US5100479A (en) * | 1990-09-21 | 1992-03-31 | The Board Of Regents Acting For And On Behalf Of The University Of Michigan | Thermopile infrared detector with semiconductor supporting rim |
US5393351A (en) * | 1993-01-13 | 1995-02-28 | The United States Of America As Represented By The Secretary Of Commerce | Multilayer film multijunction thermal converters |
JPH1151762A (en) * | 1997-08-06 | 1999-02-26 | Toshiba Corp | Infrared solid-state image pick-up device and its manufacture |
US6163061A (en) * | 1997-08-06 | 2000-12-19 | Kabushiki Kaisha Toshiba | Infrared solid-state image sensor and manufacturing method thereof |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 014, no. 498 (P - 1124) 30 October 1990 (1990-10-30) * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 05 31 May 1999 (1999-05-31) * |
Also Published As
Publication number | Publication date |
---|---|
US6518597B1 (en) | 2003-02-11 |
KR100313909B1 (en) | 2001-11-17 |
EP1102333A2 (en) | 2001-05-23 |
KR20010047680A (en) | 2001-06-15 |
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