WO2000005778A1 - Guide d'ondes isole et equipement de production de semi-conducteurs - Google Patents

Guide d'ondes isole et equipement de production de semi-conducteurs Download PDF

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Publication number
WO2000005778A1
WO2000005778A1 PCT/JP1998/003274 JP9803274W WO0005778A1 WO 2000005778 A1 WO2000005778 A1 WO 2000005778A1 JP 9803274 W JP9803274 W JP 9803274W WO 0005778 A1 WO0005778 A1 WO 0005778A1
Authority
WO
WIPO (PCT)
Prior art keywords
waveguide
microwave
insulated
plasma
reaction chamber
Prior art date
Application number
PCT/JP1998/003274
Other languages
English (en)
Japanese (ja)
Inventor
Yuichiro Ueno
Satoshi Takemori
Yasunori Nakano
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1998/003274 priority Critical patent/WO2000005778A1/fr
Priority to KR1020007002936A priority patent/KR20010024167A/ko
Publication of WO2000005778A1 publication Critical patent/WO2000005778A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/04—Fixed joints
    • H01P1/042—Hollow waveguide joints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/04—Fixed joints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/12—Hollow waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices

Definitions

  • Insulated waveguide and semiconductor manufacturing equipment are Insulated waveguide and semiconductor manufacturing equipment
  • the present invention relates to an insulated waveguide and a semiconductor manufacturing apparatus, and particularly to an insulated waveguide suitable for transmitting a microphone mouth wave transmitted from a transmitter to a load, and using the insulated waveguide.
  • Background Art on Semiconductor Manufacturing Equipment such as Plasma CVD Equipment
  • Fig. 5 shows the cleaning speed when RF (high frequency) is applied to the plasma reaction chamber wall in a high-density plasma CVD apparatus.
  • RF high frequency
  • ECR plasma and surface wave plasma which are a kind of high-density plasma, use a microphone mouth wave as a power source.
  • a waveguide having a smaller loss of the microphone mouth wave and larger electric capacity than a coaxial cable is used, and is used for transmission of a high-output microwave for plasma generation or the like.
  • This waveguide is a hollow conductor tube, and its cross section is generally rectangular or circular.
  • the material is made of aluminum or other conductor, and a microwave-generating oscillator and a microphone-absorbing load are absorbed. And are electrically connected.
  • Waveguides are not only straight, but also have various configurations, such as corners such as E corners and H corners, and T-branches. These are connected to transmit the microphone mouth wave to the load.
  • connection of these various waveguide components generally uses a flange or the like defined in the JIS standard.
  • the issues in connecting the waveguides are to minimize the leakage of the microphone mouth wave and to prevent the transmission of the microphone mouth wave.
  • a choke flange is known as one of the structures for solving the above problems.
  • Fig. 4 shows the general structure of this choke flange.
  • the choke flange is formed by providing an L-shaped waveguide 3a outside one waveguide 2a and joining the two waveguides 1a and 2a. I have.
  • the length of the waveguide parallel to the waveguide perpendicular to the waveguide is about 1 Z4, which is the wavelength of the microphone mouth wave, and it is indispensable at this waveguide junction.
  • this choke flange was commonly used to insulate waveguides because of the possibility of inserting edges.
  • the waveguide for transmitting the microwave is made of aluminum or the like and the oscillator and the load are electrically connected, the waveguide is electrically connected to the load side where the waveguide is joined. Can not be added. In other words, in high-density plasma using microphone mouth waves, RF cannot be applied to the wall of the plasma reaction chamber on which the waveguide is mounted, so that cleaning of the wall of the plasma reaction chamber cannot be performed. Become.
  • the choke flange is one-wavelength of the microwave in the direction perpendicular to and parallel to the waveguide.
  • a waveguide length of about Z4 is required, and an increase in size is inevitable.
  • semiconductor manufacturing equipment must be used in a clean room, and miniaturization of equipment is an important issue as well as low cost.
  • the connection of the waveguide through which microwaves pass is disclosed in Japanese Utility Model Laid-Open Publication No. 63-131401, and the structure for preventing leakage of microphone mouth waves is disclosed in Japanese Utility Model Application Laid-Open Publication No. 62-126831. I have.
  • the present invention has been made in view of the above points, and its purpose is to not only enable high-speed cleaning of various plasma sources using a microwave waveguide, but also reduce the amount of microwave leakage.
  • An object of the present invention is to provide an insulated waveguide that is small and does not hinder microwave transmission, and a semiconductor manufacturing apparatus using the insulated waveguide. Disclosure of the invention
  • an insulated waveguide according to the present invention has a structure in which at least two waveguides are connected to each other via an insulating structure.
  • a waveguide for forming a standing wave of a microwave is provided in the waveguide, and at least two waveguides are provided from the short-circuited end of the waveguide at a position which is an odd multiple of a quarter of the wavelength in the waveguide of the microphone mouth wave.
  • the coupling portion is located via the insulation of the waveguide, and further, a waveguide for forming a standing wave of the microphone mouth wave is provided in the waveguide, and the length of the waveguide is set to the length of the microwave mouth wave.
  • the wavelength is set to an integral multiple of one-half of the wavelength in the waveguide, and at least two at a position that is an odd multiple of one-fourth of the wavelength in the waveguide of the microphone mouth wave from the short-circuit end of the waveguide. It is characterized in that a coupling portion is located via insulation of the waveguide.
  • a semiconductor manufacturing apparatus comprising: a microwave oscillator that generates a microwave; a waveguide that transmits a microwave wave from the microwave oscillator; A plasma processing apparatus for generating plasma by a microwave from a tube to execute various processes, and a high-frequency oscillator for applying a high frequency to a wall of a plasma reaction chamber of the plasma processing apparatus;
  • the portion is formed of an insulated waveguide that insulates in the middle thereof, and the insulated waveguide is configured as described above.
  • FIG. 1 is a cross-sectional view showing one embodiment of the insulated waveguide of the present invention
  • FIG. 2 is a cross-sectional view taken along line X--X of FIG. 1
  • FIG. Fig. 4 is a sectional view showing a conventional waveguide
  • Fig. 5 Is a characteristic diagram showing the relationship between the RF power applied to the plasma reaction chamber wall and the cleaning speed
  • FIG. 6 is a diagram showing the relationship between the distance from the short-circuited end in the waveguide and the impedance
  • FIG. FIG. 9 is a cross-sectional view showing another embodiment of the insulated waveguide of the present invention.
  • FIG. 8 is a cross-sectional view showing still another embodiment of the insulated waveguide of the present invention.
  • FIG. 10 is a characteristic diagram showing the amount of microwave leakage measured at a position around the insulated waveguide of the embodiment
  • FIG. 10 is a cross-sectional view showing still another embodiment of the insulated waveguide of the present invention
  • FIG. 12 is a schematic diagram showing a system simulating the point A of the insulated waveguide shown in FIG. 1 under a short-circuit condition.
  • Fig. 13 shows a waveguide that was simulated using the system shown in Fig. 12 and examined the effect of the waveguide on the transmission of microphone mouth-waves in the waveguide.
  • Characteristic diagram showing the relationship between the value of the AC distance normalized by wavelength ⁇ and the reflection coefficient.Fig.
  • FIG. 14 shows a system simulating the insulated waveguide ⁇ point shown in Fig. 1 under open conditions.
  • Fig. 15 is a schematic configuration diagram
  • Fig. 15 is a simulation of the system shown in Fig. 14 to examine the leakage rate in the waveguide.
  • FIG. 4 is a characteristic diagram showing the relationship of. BEST MODE FOR CARRYING OUT THE INVENTION
  • Fig. 3 shows the configuration of the plasma CVD system. As shown in the figure, this configuration consists of a microwave oscillator 11 that generates microwaves, an isolator 10 that absorbs reflected waves, a detector 9 that measures the incident and reflected microphone mouth-wave power, and matching with the load impedance.
  • Matching device 8 to insulate the waveguide It consists of an edge waveguide 5, a plasma reaction chamber 6 for generating plasma and performing various processes, and an RF oscillator 7 for applying RF to the wall of the plasma reaction chamber 6.
  • FIG. 11 shows details of the plasma reaction chamber 6 to which the insulating waveguide 5 is attached.
  • reference numeral 6 denotes a plasma reaction chamber in which plasma is formed in a substantially cylindrical shape.
  • This plasma reaction chamber 6 has side walls 21, a top plate 22, a waveguide section 23 a23 b, and a gas inlet 27. a, 27 b, and insulating plate 26.
  • Waveguides 23a and 23b for introducing microwaves are integrally formed on the side wall 21.
  • An insulating waveguide 5 is connected to the waveguides 23a and 23b.
  • a quartz window 28 is provided at the boundary between the two, for passing microwaves and sealing vacuum.
  • a substrate electrode 24 for holding a substrate (not shown) is provided in the plasma reaction chamber 6 at a position facing the top plate 22, and the waveguide portions 23 a and 23 b are substantially flush with the surface of the substrate.
  • the microphone mouth wave is provided in parallel so as to be introduced into the plasma reaction chamber 6. Further, the plasma reaction chamber 6 is installed on the base plate 30 via the insulating plate 26 and is evacuated by the evacuation device 29 provided below the base plate 30. I have.
  • the side wall 21 is electrically insulated from the base plate 30 via an insulator 26, and the top plate 22 and the substrate electrode 24 are at a reference potential. Electrically isolated from 30.
  • the high frequency power supplies 7 1a and 7 1b apply, for example, a high frequency voltage of 13.56 Mhz to the top plate 22 and the substrate electrode 24 via matching boxes 72a and 72b, respectively. It is connected to the.
  • the top plate 22 is connected to the high-frequency power supply 71a via the first switching switch 73a or grounded.
  • the side wall 21 is connected to or grounded to the high-frequency power supply 71a via the second switching switch 73b.
  • the first switching switch 73 a and the second switching switch 73 b are switched when a process or cleaning is performed by the controller 74.
  • the raw material gas in the process processing or cleaning is introduced into the plasma reaction chamber 6 from the gas inlets 27a and 27b provided in the side wall 21.
  • the permanent magnets 25 are arranged concentrically with their polarities changed in order.
  • a plurality of permanent magnets 25 for changing the polarities to each other to form a cusp magnetic field are provided.
  • the material of the plasma reactor 30 and the base plate 30 is aluminum, and although not shown, a heater, water cooling, or the like is used to adjust the wall temperature to be constant.
  • dielectrics 29 through which microphone mouth waves pass, and the tip of the dielectric 29 on the side of the plasma reaction chamber 6 is connected to the plasma reaction chamber. It is installed so as to roughly match the inner surface of 6.
  • FIG. 1 the insulating waveguide 5 employed in the above-described plasma CVD device will be described with reference to FIGS. 1 and 2.
  • FIG. 1 the insulating waveguide 5 employed in the above-described plasma CVD device will be described with reference to FIGS. 1 and 2.
  • the insulating waveguide 5 comprises a waveguide 2 on the side of the microwave oscillator 11 and a waveguide 1 on the side of the plasma reaction chamber 6, and these are insulators for electrically separating the two.
  • a waveguide 3 is provided between the waveguide 1 and the waveguide 2 so that a standing wave is generated between the waveguide 1 and the waveguide 2.
  • the waveguide 3 has a substantially L-shaped cross section formed by a portion perpendicular to the direction of the microwave mouthwave transmission in the waveguide and a portion parallel to the direction, and the parallel portion is vertical. It is longer than the part.
  • the waveguide 3 and the insulator 4 are formed in a rectangular shape so as to surround the rectangular waveguide.
  • the insulator 4 uses a teflon having good high-frequency characteristics, and not only insulates the waveguides 1 and 2 but also fixes the waveguide 2 in the waveguide 1. It also plays the role of a sponsor.
  • the length AC of the waveguide 3 is defined to be an integral multiple of half the wavelength of the microwave propagating through the waveguide, and the length AC of the insulating portion B and the short-circuit end C is defined.
  • the length is specified to be an odd multiple of 1/4 of the wavelength of the microphone mouth wave propagating through the waveguide.
  • the length A C of the waveguide 3 is defined as an integral multiple of half the wavelength of the microwave propagating in the waveguide.
  • Point B in Fig. 1 was set to the open condition, and a simulation was performed using a simulated system as shown in Fig. 14, and the leakage rate of the microphone mouth wave in the waveguide was examined.
  • the results are shown in FIG.
  • the horizontal axis shows the normalized value of the distance between the BCs of the waveguides at the wavelength ⁇
  • the vertical axis shows the microwave leakage rate (leakage power input power) (the product of the microwave input amount and the actual Leakage (W)).
  • B CZ A around 0.25, 0.75, 1.25, that is, the BC distance is an odd multiple of ⁇ ⁇ 4 (XI, 3, 5, ... It can be seen that the leakage rate of the microphone mouth wave is minimized near ()).
  • the leakage rate is minimized not only at the point where the distance between B and C is an odd-numbered multiple of Peno4, but has a certain allowable width. For example, consider the point of 0.25.
  • the leakage limit at a distance of 5 cm from the waveguide in the radial direction is 5 mW / cm 2 (according to JIS C 9250), and leakage from one point (the most severe condition. Assuming the case of leakage from the insulating surface of
  • FIG. 9 shows the result of measuring the amount of microwave leakage of the insulated waveguide of this example.
  • the measurement results shown in Fig. 9 are for the case where the sum of the incident and reflected powers of the microwave is 1 kW, and the leakage amount is measured at a position 5 cm away from the exposed part of the insulator from which the microwave leaks. It was done.
  • the amount of microwave leakage is 1 (mWZcm 2 ) or less
  • C 9 2 5 0 standard of "microwave oven” meets (microphone port wave leakage amount 5 (m W / cm 2) be less is).
  • Fig. 6 shows the impedance of the short-circuited waveguide. From the figure, the position of the quarter-wavelength from the short-circuited end of the waveguide is open, and the short-circuit is further shorted at the quarter-position. It turns out to be in a state, and it is understood that opening and short-circuiting are repeated periodically every quarter wavelength from the short-circuit end. As shown in Fig. 7, when the waveguide 3 is provided around the rectangular waveguides 1 and 2, the waveguide having an integral multiple of one-half wavelength of the microwave is the same as the waveguides 1 and 2.
  • a short circuit occurs at the wall surface (near junction A), the effect on the microwave transmission in the waveguide is small, and the intensity of the microwave propagating to the waveguide 3 is smaller than in the waveguide. This is because, when the waveguide 3 is viewed from the waveguides 1 and 2, the junction A is in a short-circuit state, that is, under the same condition as the conductor wall, and it is difficult for the microphone mouth wave to enter the waveguide 3. That's why.
  • the junction B of the waveguides 1 and 2 is located at an odd multiple of one-quarter wavelength from the short-circuit end C, the junction B is open and the leakage of the microphone mouth wave is small.
  • the junction B is in the open / closed state, the current flowing perpendicularly to the junction surface on the wall surface of the waveguide 3 becomes small, and the radiation clogging leakage of the microphone mouth wave is suppressed to a small value.
  • the insulating position B of the waveguide it is also meaningful to position the insulating position B of the waveguide at the linear portion.
  • the generally used choke flange as shown in Fig. 4 has a microwave leakage rate of 0.0033 because the insulating part of the waveguide is at the corner.
  • the leak rate of the microphone mouth wave is 0.000013 (the leak rate of the microwave is based on the simulation result). By positioning the insulation position B of the Can be kept low.
  • the waveguide is installed in the direction along the waveguide, the dimension in the direction perpendicular to the waveguide is very small, and the waveguide is placed in the plasma reaction chamber.
  • Semiconductor manufacturing equipment such as plasma CVD equipment, including waveguides, can be miniaturized because they can be arranged close to each other.
  • the other waveguide is inserted into one of the waveguides via an insulator (fitting structure), it is possible to easily join the waveguides. In other words, in general waveguide joining, it is necessary to join the flange portion with a plurality of nuts in order to reduce microwave leakage. There is no need to fix the waveguide, and the joining of the waveguides can be performed with a mating structure, which simplifies and removes the waveguide very easily.
  • the waveguide 13 may be provided in a direction perpendicular to the waveguides 11 and 12 as shown in FIG. 8 without being limited to the shape shown in FIG.
  • the length of must be an integral multiple of one-half wavelength of the microwave, and the junction should be an odd multiple of one-quarter wavelength to reduce the current flowing vertically through the junction.
  • FIG. 10 shows another embodiment of the insulating waveguide of the present invention.
  • the insulating waveguide is miniaturized and integrated with the plasma reaction chamber by using a quartz window for vacuum sealing of the plasma reaction chamber as the waveguide of the insulating waveguide.
  • the left side of the quartz 14 is a plasma reaction chamber, and the quartz 14 simultaneously functions as a vacuum seal for the plasma reaction chamber and as an insulating waveguide.
  • the quartz 14 and the waveguide 18 are fixed to the wall 19 of the plasma reaction chamber by an insulator 17 and mounting jigs 15 and 16.
  • the length AC of the waveguide is an integral multiple of one-half the wavelength of the microwave in the waveguide
  • the distance BC from the short-circuit end to the waveguide connection is BC It should be an odd multiple of 1/4 of the wavelength. Since the wavelength in a dielectric such as quartz becomes shorter in proportion to the half power of the dielectric constant of the dielectric, the size can be reduced by filling the waveguide with a dielectric such as quartz. .
  • the waveguide is rectangular, but the invention is not limited to this, and the waveguide may be circular or coaxial.
  • the waveguide may be fixed with an insulating bolt, as shown in FIG. A structure in which the waveguide 2 is inserted into the waveguide 1 may be used.
  • the structure of the insulator is not limited to FIGS. 1 and 10. It can be changed according to the structure of the waveguide and the mounting jig, and it goes without saying that a space may be provided between the waveguides 1 and 2 without an insulator.
  • At least two waveguides are connected by a fitting structure via insulation, and a waveguide for forming a standing wave of a microwave is provided in the waveguide.
  • the coupling portion is located at a position of an odd multiple of one-fourth of the wavelength in the waveguide of the microphone mouth wave from the short-circuited end in the waveguide via the insulation of at least two waveguides;

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  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un procédé de production d'un guide d'onde isolé qui permet de supprimer les fuites de micro-ondes sans perturber aucunement la transmission des micro-ondes. Ce procédé permet par ailleurs le nettoyage rapide de diverses sources de plasma mettant en oeuvre un guide d'ondes hyperfréquence. Il se caractérise en ce qu'au moins deux guides d'ondes sont couplés au moyen d'une structure d'adaptation traversant le milieu isolant, en ce que le guide d'ondes est doté d'une partie conçue pour former une micro-onde stationnaire et d'une partie destinée au couplage qui est disposée à travers le milieu isolant d'au moins deux guides d'ondes au niveau d'une position correspondant à un nombre impair de fois le quart de la longueur d'onde d'une micro-onde dans le guide d'ondes à partir de l'extrémité court-circuité de ce dernier, en ce que le guide d'ondes est également doté d'une partie conçue pour former une micro-onde stationnaire et présentant une longueur égale à un nombre entier de fois une demi longueur d'onde d'une micro-onde dans le guide d'ondes, et d'une partie destinée au couplage qui est disposée à travers le milieu isolant d'au moins deux guides d'ondes au niveau d'une position correspondant à un nombre impair de fois le quart de la longueur d'onde d'une micro-onde dans le guide d'ondes à partir de l'extrémité court-circuité de ce dernier.
PCT/JP1998/003274 1998-07-22 1998-07-22 Guide d'ondes isole et equipement de production de semi-conducteurs WO2000005778A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP1998/003274 WO2000005778A1 (fr) 1998-07-22 1998-07-22 Guide d'ondes isole et equipement de production de semi-conducteurs
KR1020007002936A KR20010024167A (ko) 1998-07-22 1998-07-22 절연도파관 및 반도체제조장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/003274 WO2000005778A1 (fr) 1998-07-22 1998-07-22 Guide d'ondes isole et equipement de production de semi-conducteurs

Publications (1)

Publication Number Publication Date
WO2000005778A1 true WO2000005778A1 (fr) 2000-02-03

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002374101A (ja) * 2001-06-13 2002-12-26 New Japan Radio Co Ltd チョークフランジ
JP2005020415A (ja) * 2003-06-26 2005-01-20 Kyocera Corp 誘電体導波管線路と導波管との接続構造並びにその構造を用いたアンテナ装置及びフィルター装置
JP2007228223A (ja) * 2006-02-23 2007-09-06 Mitsubishi Electric Corp 導波管接続部
JP2008244857A (ja) * 2007-03-27 2008-10-09 National Institutes Of Natural Sciences 導波管接合器
US7555262B2 (en) 2002-09-24 2009-06-30 Honeywell International Inc. Radio frequency interference monitor
JP2010278752A (ja) * 2009-05-28 2010-12-09 Mitsubishi Electric Corp 導波管チョーク構造
GB2547211B (en) * 2016-02-10 2022-03-16 Bae Systems Plc Waveguides
EP4047739A1 (fr) * 2021-02-17 2022-08-24 Furuno Electric Co., Ltd. Structure de connexion de guide d'ondes

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63131401U (fr) * 1987-02-18 1988-08-29
JPS63271936A (ja) * 1987-04-28 1988-11-09 Sumitomo Metal Ind Ltd プラズマプロセス装置
JPS63293825A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd プラズマ処理装置
JPH01153706U (fr) * 1988-04-13 1989-10-23
JPH05275353A (ja) * 1992-03-27 1993-10-22 Sumitomo Metal Ind Ltd プラズマ処理装置及び該装置のクリーニング方法
JPH07211489A (ja) * 1994-01-21 1995-08-11 Sumitomo Metal Ind Ltd マイクロ波プラズマ処理装置及び該装置のクリーニング方法
JPH09266096A (ja) * 1996-03-28 1997-10-07 Hitachi Ltd プラズマ処理装置及びこれを用いたプラズマ処理方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63131401U (fr) * 1987-02-18 1988-08-29
JPS63271936A (ja) * 1987-04-28 1988-11-09 Sumitomo Metal Ind Ltd プラズマプロセス装置
JPS63293825A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd プラズマ処理装置
JPH01153706U (fr) * 1988-04-13 1989-10-23
JPH05275353A (ja) * 1992-03-27 1993-10-22 Sumitomo Metal Ind Ltd プラズマ処理装置及び該装置のクリーニング方法
JPH07211489A (ja) * 1994-01-21 1995-08-11 Sumitomo Metal Ind Ltd マイクロ波プラズマ処理装置及び該装置のクリーニング方法
JPH09266096A (ja) * 1996-03-28 1997-10-07 Hitachi Ltd プラズマ処理装置及びこれを用いたプラズマ処理方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002374101A (ja) * 2001-06-13 2002-12-26 New Japan Radio Co Ltd チョークフランジ
US7555262B2 (en) 2002-09-24 2009-06-30 Honeywell International Inc. Radio frequency interference monitor
JP2005020415A (ja) * 2003-06-26 2005-01-20 Kyocera Corp 誘電体導波管線路と導波管との接続構造並びにその構造を用いたアンテナ装置及びフィルター装置
JP2007228223A (ja) * 2006-02-23 2007-09-06 Mitsubishi Electric Corp 導波管接続部
JP4575313B2 (ja) * 2006-02-23 2010-11-04 三菱電機株式会社 導波管接続部
JP2008244857A (ja) * 2007-03-27 2008-10-09 National Institutes Of Natural Sciences 導波管接合器
JP2010278752A (ja) * 2009-05-28 2010-12-09 Mitsubishi Electric Corp 導波管チョーク構造
GB2547211B (en) * 2016-02-10 2022-03-16 Bae Systems Plc Waveguides
EP4047739A1 (fr) * 2021-02-17 2022-08-24 Furuno Electric Co., Ltd. Structure de connexion de guide d'ondes
US11644629B2 (en) 2021-02-17 2023-05-09 Furuno Electric Co., Ltd. Waveguide connecting structure

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