WO1997020350A3 - Element a semiconducteur avec contact schottky et son procede de fabrication - Google Patents

Element a semiconducteur avec contact schottky et son procede de fabrication Download PDF

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Publication number
WO1997020350A3
WO1997020350A3 PCT/DE1996/002285 DE9602285W WO9720350A3 WO 1997020350 A3 WO1997020350 A3 WO 1997020350A3 DE 9602285 W DE9602285 W DE 9602285W WO 9720350 A3 WO9720350 A3 WO 9720350A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
passivation
semiconductor device
contact
schottky contact
Prior art date
Application number
PCT/DE1996/002285
Other languages
German (de)
English (en)
Other versions
WO1997020350A2 (fr
Inventor
Hubert Werthmann
Original Assignee
Siemens Ag
Hubert Werthmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Hubert Werthmann filed Critical Siemens Ag
Publication of WO1997020350A2 publication Critical patent/WO1997020350A2/fr
Publication of WO1997020350A3 publication Critical patent/WO1997020350A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un élément à semiconducteur présentant un contact Schottky sur une couche de silicium (1), ledit contact comportant une couche de siliciure métallique (2) formée dans une fenêtre de contact (13) d'une passivation de surface (5). Cette passivation de surface (5) est constituée d'une première couche de passivation (15) et d'une seconde couche de passivation (16) qui définit la fenêtre de contact (13). La seconde couche de passivation (16) permet de déplacer la limite entre la couche de siliciure métallique (2), l'anneau de garde (6) et la passivation de surface en direction du milieu de l'anneau de garde. Ceci permet d'accroître la résistance aux courts-circuits, de réduire le risque d'un claquage prématuré ou d'une formation de canal.
PCT/DE1996/002285 1995-11-28 1996-11-28 Element a semiconducteur avec contact schottky et son procede de fabrication WO1997020350A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19544326.8 1995-11-28
DE1995144326 DE19544326A1 (de) 1995-11-28 1995-11-28 Halbleiterbauelement mit Schottkykontakt

Publications (2)

Publication Number Publication Date
WO1997020350A2 WO1997020350A2 (fr) 1997-06-05
WO1997020350A3 true WO1997020350A3 (fr) 1997-07-03

Family

ID=7778606

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1996/002285 WO1997020350A2 (fr) 1995-11-28 1996-11-28 Element a semiconducteur avec contact schottky et son procede de fabrication

Country Status (2)

Country Link
DE (1) DE19544326A1 (fr)
WO (1) WO1997020350A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19653457C2 (de) * 1996-12-20 1999-03-25 Gen Semiconductor Ireland Macr Schottky-Diode sowie Verfahren zu ihrer Herstellung
DE10015884A1 (de) * 2000-03-30 2001-10-11 Philips Corp Intellectual Pty Schottky-Diode
DE102011006492B3 (de) * 2011-03-31 2012-10-11 Semikron Elektronik Gmbh & Co. Kg Schottky-Diode und Herstellungsverfahren hierzu
DE102011122091A1 (de) * 2011-12-22 2013-06-27 Diotec Semiconductor Ag Schottky-Halbleiterprozess
CN113871467B (zh) * 2021-09-28 2023-08-04 吉林华微电子股份有限公司 一种肖特基二极管及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753807A (en) * 1972-02-24 1973-08-21 Bell Canada Northern Electric Manufacture of bipolar semiconductor devices
EP0182088A1 (fr) * 1984-10-26 1986-05-28 Siemens Aktiengesellschaft Contact Schottky à la surface d'un semi-conducteur et son procédé de réalisatioN

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3379367D1 (en) * 1982-12-08 1989-04-13 Philips Nv A semiconductor device comprising at least one schottkytype rectifier having controllable barrier height

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753807A (en) * 1972-02-24 1973-08-21 Bell Canada Northern Electric Manufacture of bipolar semiconductor devices
EP0182088A1 (fr) * 1984-10-26 1986-05-28 Siemens Aktiengesellschaft Contact Schottky à la surface d'un semi-conducteur et son procédé de réalisatioN

Also Published As

Publication number Publication date
DE19544326A1 (de) 1997-06-05
WO1997020350A2 (fr) 1997-06-05

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