WO1997014176A1 - Semiconductor nanoparticle colloids - Google Patents

Semiconductor nanoparticle colloids Download PDF

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Publication number
WO1997014176A1
WO1997014176A1 PCT/US1996/015286 US9615286W WO9714176A1 WO 1997014176 A1 WO1997014176 A1 WO 1997014176A1 US 9615286 W US9615286 W US 9615286W WO 9714176 A1 WO9714176 A1 WO 9714176A1
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WO
WIPO (PCT)
Prior art keywords
colloidal suspension
capping agent
produce
nanoparticles
semiconductor
Prior art date
Application number
PCT/US1996/015286
Other languages
French (fr)
Inventor
Douglas L. Schulz
Martin Pehnt
Calvin J. Curtis
David S. Ginley
Original Assignee
Midwest Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midwest Research Institute filed Critical Midwest Research Institute
Priority to AU73705/96A priority Critical patent/AU7370596A/en
Publication of WO1997014176A1 publication Critical patent/WO1997014176A1/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Definitions

  • the present invention relates to a substantially stable colloidal suspension of semiconductor nanoparticles capped with a volatile capping agent and to the preparation of the colloidal suspension.
  • An exemplified colloidal suspension is cadmium telluride nanoparticles capped with acetonitrile, whereby the cadmium telluride nanoparticles can be employed through the deposition thereof onto a suitable substrate in the production of a substantially carbon-free cadmium telluride semiconductor film.
  • Semiconductor nanoparticles have scientific and research functionalities due to novel properties such as quantum size effects, size-dependent chemical reactivity, optical nonlinearity, efficient photoelectron emission and melting point reduction.
  • One particular application utilizing semiconductor nanoparticles is found in the production of semiconductor films as described in co-pending and commonly assigned United States Patent Application Serial No.08/536,348, incorporated herein in its entirety by reference.
  • semiconductor nanoparticles such as cadmium telluride can be deposited onto a substrate whose surface temperature after nanoparticle deposition thereon is sufficient to thereby cause simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.
  • Relatively non-volatile capping agents such as trioctylphophine (boiling point 29°C/50mm Hg) and trioctylphosphineoxide (boiling point 201-202°C/2mm Hg) are taught.
  • these agents tend to decompose rather than volatilize, and therefore cause the inco ⁇ oration of carbon into the nanoparticle-derived semiconductor films. While such inco ⁇ oration is not fatal to film production, a greater degree of purity generally results in the production of a more efficient and effective semiconductor film
  • a primary object of the present invention is to provide a substantially stable colloidal suspension comprising semiconductor nanoparticles capped with a volatile capping agent such that the suspension can be employed for growing semiconductor films.
  • Another object of the present invention is to provide a process for the preparation of a substantially stable nanoparticle colloidal suspension wherein volatile capping agents are employed.
  • Yet another object of the present invention is to provide a substantially stable colloidal suspension wherein the capping agent employed is a volatile coordinating Lewis base.
  • the present invention is a substantially stable colloidal suspension comprising semiconductor nanoparticles capped with a volatile capping agent, and the preparation thereof.
  • a colloidal suspension so defined can be employed, for example, as a source of substantially carbon-free semiconductor nanoparticles to be deposited onto a substrate whose surface temperature after nanoparticle deposition thereon is sufficient to cause simultaneous fusion ofthe nanoparticles which thereby coalesce with each other and effectuate film growth.
  • Such freedom from carbon impurities is achieved because of the volatility of the capping agent which, instead of breaking down and introducing carbon to the suspension, volatilizes away during nanoparticle deposition to thereby leave a substantially carbon-free nanoparticle deposition.
  • volatile is defined as having a boiling point less than about 200°C at ambient pressure.
  • the capping agent preferably is chosen from volatile coordinating Lewis bases species such as aromatics, O-coordinating alkyl ethers, N-coordinating amines and nitriles, and P- and O-coordinating alkyl phosphines and phosphine oxides.
  • Preparation of the colloidal suspension comprises providing two salts reactable with each other to produce a semiconductor and reacting these two salts to produce a semiconductor nanoparticle precipitate.
  • Introduction of the volatile capping agent can occur either during nanoparticle synthesis or after nanoparticle synthesis by appropriate exposure to and treatment of the nanoparticles by the volatile capping agent.
  • the two salts are reacted in the presence of a volatile capping agent at a temperature and time sufficient to produce a precipitate.
  • the precipitate is mixed with 7/14176 PC17US96/15286
  • additional volatile capping agent to produce a mixture which is subjected to sonication and centrifugation for a time sufficient to produce a concentrated colloidal suspension.
  • This concentrated suspension is diluted with additional volatile capping agent in an amount sufficient to produce a colloidal suspension suitable for deposition in the formation of a semiconductor film.
  • the two salts are reacted to form a nanoparticle precipitate. Thereafter, this precipitate is mixed with a volatile capping agent to produce a mixture which is subjected to sonication and centrifugation for a time sufficient to produce a concentrated colloidal suspension.
  • the present invention is a substantially stable colloidal suspension comprising a plurality of semiconductor nanoparticles each capped with a volatile capping agent, and the preparation thereof.
  • the following Examples speak toward the preparation of a preferred embodiment thereof comprising a substantially stable colloidal suspension of cadmium telluride nanoparticles capped with acetonitrile.
  • Example I introduces a volatile capping agent during nanoparticle synthesis;
  • Example II introduces a volatile capping agent after nanoparticle has occurred.
  • Example I A colloidal suspension was prepared by adding 0.516 g cadmium iodide (1.41 mmol) to a 500 ml side-arm round bottom flask fitted with a Teflon-coated stir bar, and adding 0.267 g sodium telluride (1.54 mmol) to a 250 ml side-arm round bottom flask fitted with a Teflon-coated stir bar in an inert atmosphere glove box. After attaching each of these flasks to a Schlenk vacuum line, 200 ml freshly distilled and deoxygenated acetonitrile was added to the cadmium iodide flask.
  • the remaining dark red precipitate slurry along with remaining liquid was divided into two equal portions and each portion was transferred to a respective 40 ml centrifuge tube and centrifuged for 15 minutes at 4,000 r.p.m. to thereby remove additional supernatant which was decanted and discarded. Thereafter, acetonitrile was added to fill each tube and the resulting mixture was subjected to sonication for 15 minutes (to disperse the nanoparticles) and subsequent centrifugation for 15 minutes at 4,000 r.p.m At the completion of centrifugation, the resulting supernatant was dark red, indicative of the formation of a colloidal suspension.
  • Example II A colloidal suspension was prepared by adding 1.033 g cadmium iodide (2.82 mmol) to a 500 ml side-arm round bottom flask fitted with a Teflon-coated stir bar, and adding 0.502 g sodium telluride (2.89 mmol) to a 250 ml side-arm round bottom flask fitted with a Teflon-coated stir bar in an inert atmosphere glove box. After attaching each of these flasks to a Schlenk vacuum line, 250 ml freshly distilled and deoxygenated methanol was added to the cadmium iodide flask and 30 ml freshly distilled and deoxygenated methanol was added to the sodium telluride flask.
  • each of the flasks were stirred, the flasks were cooled to -78 °C by employing dry ice/isopropanol baths over a period of 25 minutes.
  • a small gauge cannula then was employed to transfer the sodium telluride/methanol solution to the cadmium iodide/methanol mixture, at which time a dark red precipitate slurry formed. The precipitate was allowed to settle and the colorless supernatant was decanted and discarded. The remaining dark red precipitate slurry was divided into two equal portions and each portion was transferred to a respective 40 ml centrifuge tube. Each tube was filled with methanol and sonicated for 15 minutes to solubilize any remaining sodium iodide.

Abstract

A substantially stable colloidal suspension comprising a plurality of semiconductor nanoparticles each capped with a volatile capping agent, and the preparation thereof. A colloidal suspension so defined can be employed as a source of substantially carbon-free semiconductor nanoparticles for semiconductor film growth. Preparation of the colloidal suspension comprises providing two salts reactable with each other to produce a semiconductor and reacting these two salts to produce semiconductor nanoparticles. Introduction of the volatile capping agent can occur either during nanoparticle synthesis or after nanoparticle synthesis by appropriate exposure to and treatment of the nanoparticles by the volatile capping agent. The resulting nanoparticle precipitate is mixed with volatile capping agent to produce a mixture which is subjected to sonication and centrifugation for a time sufficient to produce a concentrated colloidal suspension thereafter diluted for subsequent deposition in the formation of a semiconductor film.

Description

Semiconductor Nanoparticle Colloids
The United States Government has rights in this invention under Contract No. DE-AC36-83CH10093 between the United States Department of Energy and the National Renewable Energy Laboratory, a division of the Midwest Research Institute.
Technical Field
The present invention relates to a substantially stable colloidal suspension of semiconductor nanoparticles capped with a volatile capping agent and to the preparation of the colloidal suspension. An exemplified colloidal suspension is cadmium telluride nanoparticles capped with acetonitrile, whereby the cadmium telluride nanoparticles can be employed through the deposition thereof onto a suitable substrate in the production of a substantially carbon-free cadmium telluride semiconductor film. II. Background Art
Semiconductor nanoparticles have scientific and research functionalities due to novel properties such as quantum size effects, size-dependent chemical reactivity, optical nonlinearity, efficient photoelectron emission and melting point reduction. One particular application utilizing semiconductor nanoparticles is found in the production of semiconductor films as described in co-pending and commonly assigned United States Patent Application Serial No.08/536,348, incorporated herein in its entirety by reference. As taught in this referenced application, semiconductor nanoparticles such as cadmium telluride can be deposited onto a substrate whose surface temperature after nanoparticle deposition thereon is sufficient to thereby cause simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth. Relatively non-volatile capping agents such as trioctylphophine (boiling point 29°C/50mm Hg) and trioctylphosphineoxide (boiling point 201-202°C/2mm Hg) are taught. However, because of their relative non-volatility, these agents tend to decompose rather than volatilize, and therefore cause the incoφoration of carbon into the nanoparticle-derived semiconductor films. While such incoφoration is not fatal to film production, a greater degree of purity generally results in the production of a more efficient and effective semiconductor film
In view of the above considerations, it is apparent that a need is present for semiconductor film substantially free of impurities. Accordingly, a primary object of the present invention is to provide a substantially stable colloidal suspension comprising semiconductor nanoparticles capped with a volatile capping agent such that the suspension can be employed for growing semiconductor films.
Another object of the present invention is to provide a process for the preparation of a substantially stable nanoparticle colloidal suspension wherein volatile capping agents are employed.
Yet another object of the present invention is to provide a substantially stable colloidal suspension wherein the capping agent employed is a volatile coordinating Lewis base.
These and other objects ofthe present invention will become apparent throughout the description of the invention which now follows.
Disclosure of the Invention
The present invention is a substantially stable colloidal suspension comprising semiconductor nanoparticles capped with a volatile capping agent, and the preparation thereof. A colloidal suspension so defined can be employed, for example, as a source of substantially carbon-free semiconductor nanoparticles to be deposited onto a substrate whose surface temperature after nanoparticle deposition thereon is sufficient to cause simultaneous fusion ofthe nanoparticles which thereby coalesce with each other and effectuate film growth. Such freedom from carbon impurities is achieved because of the volatility of the capping agent which, instead of breaking down and introducing carbon to the suspension, volatilizes away during nanoparticle deposition to thereby leave a substantially carbon-free nanoparticle deposition. As used throughout this document the term "volatile" is defined as having a boiling point less than about 200°C at ambient pressure. The capping agent preferably is chosen from volatile coordinating Lewis bases species such as aromatics, O-coordinating alkyl ethers, N-coordinating amines and nitriles, and P- and O-coordinating alkyl phosphines and phosphine oxides.
Preparation of the colloidal suspension comprises providing two salts reactable with each other to produce a semiconductor and reacting these two salts to produce a semiconductor nanoparticle precipitate. Introduction of the volatile capping agent can occur either during nanoparticle synthesis or after nanoparticle synthesis by appropriate exposure to and treatment of the nanoparticles by the volatile capping agent. In the former methodology wherein the capping agent is introduced during nanoparticle synthesis, the two salts are reacted in the presence of a volatile capping agent at a temperature and time sufficient to produce a precipitate. The precipitate is mixed with 7/14176 PC17US96/15286
additional volatile capping agent to produce a mixture which is subjected to sonication and centrifugation for a time sufficient to produce a concentrated colloidal suspension. This concentrated suspension is diluted with additional volatile capping agent in an amount sufficient to produce a colloidal suspension suitable for deposition in the formation of a semiconductor film. In the latter methodology wherein introduction of the capping agent occurs after nanoparticle synthesis, the two salts are reacted to form a nanoparticle precipitate. Thereafter, this precipitate is mixed with a volatile capping agent to produce a mixture which is subjected to sonication and centrifugation for a time sufficient to produce a concentrated colloidal suspension. This concentrated suspension is diluted with additional volatile capping agent in an amount sufficient to produce a colloidal suspension suitable for deposition in the formation of a semiconductor film Deposition of nanoparticles of the present invention result in a substantially carbon-free film for any particular application as required. Detailed Description of the Preferred Embodiment The present invention is a substantially stable colloidal suspension comprising a plurality of semiconductor nanoparticles each capped with a volatile capping agent, and the preparation thereof. The following Examples speak toward the preparation of a preferred embodiment thereof comprising a substantially stable colloidal suspension of cadmium telluride nanoparticles capped with acetonitrile. Example I introduces a volatile capping agent during nanoparticle synthesis; Example II introduces a volatile capping agent after nanoparticle has occurred.
Example I A colloidal suspension was prepared by adding 0.516 g cadmium iodide (1.41 mmol) to a 500 ml side-arm round bottom flask fitted with a Teflon-coated stir bar, and adding 0.267 g sodium telluride (1.54 mmol) to a 250 ml side-arm round bottom flask fitted with a Teflon-coated stir bar in an inert atmosphere glove box. After attaching each of these flasks to a Schlenk vacuum line, 200 ml freshly distilled and deoxygenated acetonitrile was added to the cadmium iodide flask. Simultaneously, 15 ml freshly distilled and deoxygenated methanol was added to the sodium telluride flask in order to solubilize the sodium telluride. While the contents of each ofthe flasks were stirred, the flasks were cooled to 0°C by employing ice baths over a period of 20 minutes. A small gauge cannula then was employed to transfer the sodium telluride/methanol solution to the cadmium iodide/acetonitrile mixture, at which time a dark red precipitate slurry formed. The precipitate was allowed to settle and the colorless supernatant was decanted and discarded. The remaining dark red precipitate slurry along with remaining liquid was divided into two equal portions and each portion was transferred to a respective 40 ml centrifuge tube and centrifuged for 15 minutes at 4,000 r.p.m. to thereby remove additional supernatant which was decanted and discarded. Thereafter, acetonitrile was added to fill each tube and the resulting mixture was subjected to sonication for 15 minutes (to disperse the nanoparticles) and subsequent centrifugation for 15 minutes at 4,000 r.p.m At the completion of centrifugation, the resulting supernatant was dark red, indicative of the formation of a colloidal suspension. After dilution of this suspension with acetonitrile to thereby yield a transparent colloidal suspension with Absorbance approximately equal to one, a clear orange colloidal suspension was formed and was subjected to UV-Vis spectroscopic characterization which showed almost zero absorbance at 850 ran, indicative of no agglomeration. Additionally, a zero-point of the second derivative of the absorbance curve was observed at 585 nm, corresponding to cadmium telluride nanoparticles on the order of 30 A in diameter using tight binding calculations.
Example II A colloidal suspension was prepared by adding 1.033 g cadmium iodide (2.82 mmol) to a 500 ml side-arm round bottom flask fitted with a Teflon-coated stir bar, and adding 0.502 g sodium telluride (2.89 mmol) to a 250 ml side-arm round bottom flask fitted with a Teflon-coated stir bar in an inert atmosphere glove box. After attaching each of these flasks to a Schlenk vacuum line, 250 ml freshly distilled and deoxygenated methanol was added to the cadmium iodide flask and 30 ml freshly distilled and deoxygenated methanol was added to the sodium telluride flask. While the contents of each of the flasks were stirred, the flasks were cooled to -78 °C by employing dry ice/isopropanol baths over a period of 25 minutes. A small gauge cannula then was employed to transfer the sodium telluride/methanol solution to the cadmium iodide/methanol mixture, at which time a dark red precipitate slurry formed. The precipitate was allowed to settle and the colorless supernatant was decanted and discarded. The remaining dark red precipitate slurry was divided into two equal portions and each portion was transferred to a respective 40 ml centrifuge tube. Each tube was filled with methanol and sonicated for 15 minutes to solubilize any remaining sodium iodide. Each tube then was centrifuged for 10 minutes at 4,000 r.p.m. and the resulting colorless methanol supernatant was decanted and discarded. Thereafter, acetonitrile was added to fill each tube and the resulting mixture was subjected to sonication for 15 minutes and subsequent centrifugation for 10 minutes at 4,000 r.p.m At the completion of centrifugation, the resulting supernatant was dark red, indicative of the formation of a colloidal suspension. After dilution of this suspension with acetonitrile to thereby yield a transparent colloidal suspension with Absorbance approximately equal to one, a clear orange colloidal suspension was formed and was subjected to UV-Vis spectroscopic characterization which showed almost zero absorbance at 850 nm, indicative of no agglomeration. Additionally, a zero-point of the second derivative of the absorbance curve was observed at 593 nm, corresponding to cadmium telluride nanoparticles on the order of 30 A in diameter using tight binding calculations.
The above Examples illustrate the synthesis of nanoparticle semiconductor colloidal suspensions wherein the nanoparticles are capped with a volatile capping agent. As earlier discussed, the volatility ofthe capping agent assures its volatilization-departure during semiconductor film production employing an operating temperature above the boiling point of the capping agent. Resultantly, semiconductor films so formed are substantially carbon-free when nanoparticles according to the present invention are deposited onto a substrate whose surface temperature after nanoparticle deposition thereon is sufficient to thereby cause simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.
While an illustrative and presently preferred embodiment of the invention has been described in detail it is to be understood that the inventive concepts may be otherwise variously embodied and employed and that the appended claims are intended to be construed to include such variations except insofar as limited by the prior art.

Claims

Claims
I . A colloidal suspension comprising semiconductor nanoparticles capped with a volatile capping agent.
2. A colloidal suspension as claimed in claim 1 wherein the capping agent is chosen from the group consisting of volatile Lewis bases.
3. A colloidal suspension as claimed in 2 wherein claim the capping agent is acetonitrile.
4. A colloidal suspension as claimed in claim 1 wherein the nanoparticles are cadmium telluride nanoparticles.
5. A colloidal suspension as claimed in claim 2 wherein the nanoparticles are cadmium telluride nanoparticles.
6. A colloidal suspension as claimed in claim 3 wherein the nanoparticles are cadmium telluride nanoparticles.
7. A process for the preparation of a semiconductor nanoparticle colloidal suspension, the process comprising: a) providing two salts reactable with each other to produce a semiconductor; b) reacting the two salts in the presence of a volatile capping agent at a temperature and time sufficient to produce a semiconductor nanoparticle precipitate; c) mixing the precipitate with additional volatile capping agent to produce a mixture and subjecting the mixture to sonication and centrifugation for a time sufficient to produce a concentrated colloidal suspension; and d) diluting the concentrated colloidal suspension with additional volatile capping agent in an amount sufficient to produce a colloidal suspension suitable for deposition in the formation of a semiconductor film.
8. A process as claimed in claim 7 wherein the volatile capping agent is chosen from the group consisting of volatile Lewis bases.
9. A process as claimed in claim 8 wherein the two salts are a metal salt and a halide salt.
10. A process as claimed in claim 9 wherein the metal salt is sodium telluride and the halide salt is cadmium iodide.
I I. A process as claimed in claim 10 wherein the Lewis base is acetonitrile.
12. A process for the preparation of a semiconductor nanoparticle colloidal suspension, the process comprising: a) providing two salts reactable with each other to produce a semiconductor; b) reacting the two salts at a temperature and time sufficient to produce a semiconductor nanoparticle precipitate; c) mixing the precipitate with a volatile capping agent to produce a mixture and subjecting the mixture to sonication and centrifugation for a time sufficient to produce a concentrated colloidal suspension; and d) diluting the concentrated colloidal suspension with additional volatile capping agent in an amount sufficient to produce a colloidal suspension suitable for deposition in the formation of a semiconductor film.
13. A process as claimed in claim 12 wherein the volatile capping agent is chosen from the group consisting of volatile Lewis bases.
14. A process as claimed in claim 13 wherein the two salts are a metal salt and a halide salt.
15. A process as claimed in claim 14 wherein the metal salt is sodium telluride and the halide salt is cadmium iodide.
16. A process as claimed in claim 15 wherein the Lewis base is acetonitrile.
PCT/US1996/015286 1995-09-29 1996-09-24 Semiconductor nanoparticle colloids WO1997014176A1 (en)

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AU73705/96A AU7370596A (en) 1995-09-29 1996-09-24 Semiconductor nanoparticle colloids

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US53598195A 1995-09-29 1995-09-29
US08/535,981 1995-09-29

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1066418A1 (en) * 1998-01-27 2001-01-10 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
WO2003003982A2 (en) * 2001-07-02 2003-01-16 Board Of Regents, University Of Texas System Light-emitting nanoparticles and method of making same
WO2004008550A2 (en) * 2002-07-15 2004-01-22 Advanced Research And Technology Institute, Inc. Rapid low-temperature synthesis of quantum dots
US6846565B2 (en) 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
US7850933B2 (en) * 2006-04-12 2010-12-14 Nanomas Technologies, Inc. Nanoparticles, methods of making, and applications using same
US8618595B2 (en) 2001-07-02 2013-12-31 Merck Patent Gmbh Applications of light-emitting nanoparticles

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1066418A1 (en) * 1998-01-27 2001-01-10 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
EP1066418A4 (en) * 1998-01-27 2001-05-23 Midwest Research Inst Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
WO2003003982A2 (en) * 2001-07-02 2003-01-16 Board Of Regents, University Of Texas System Light-emitting nanoparticles and method of making same
WO2003003982A3 (en) * 2001-07-02 2003-07-10 Univ Texas Light-emitting nanoparticles and method of making same
US6846565B2 (en) 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
US8618595B2 (en) 2001-07-02 2013-12-31 Merck Patent Gmbh Applications of light-emitting nanoparticles
WO2004008550A2 (en) * 2002-07-15 2004-01-22 Advanced Research And Technology Institute, Inc. Rapid low-temperature synthesis of quantum dots
WO2004008550A3 (en) * 2002-07-15 2004-12-23 Advanced Res & Tech Inst Rapid low-temperature synthesis of quantum dots
US7850933B2 (en) * 2006-04-12 2010-12-14 Nanomas Technologies, Inc. Nanoparticles, methods of making, and applications using same

Also Published As

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ZA968079B (en) 1997-04-21
AU7370596A (en) 1997-04-30
AR003732A1 (en) 1998-09-09

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