WO1995015006A1 - Appareil de lavage, appareil de production de semi-conducteurs et chaine de production de semi-conducteurs - Google Patents

Appareil de lavage, appareil de production de semi-conducteurs et chaine de production de semi-conducteurs Download PDF

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Publication number
WO1995015006A1
WO1995015006A1 PCT/JP1994/001977 JP9401977W WO9515006A1 WO 1995015006 A1 WO1995015006 A1 WO 1995015006A1 JP 9401977 W JP9401977 W JP 9401977W WO 9515006 A1 WO9515006 A1 WO 9515006A1
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WIPO (PCT)
Prior art keywords
gas
substrate
hydrogen
semiconductor manufacturing
cleaning
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PCT/JP1994/001977
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English (en)
Japanese (ja)
Inventor
Tadahiro Ohmi
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Tadahiro Ohmi
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Publication of WO1995015006A1 publication Critical patent/WO1995015006A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps

Definitions

  • the present invention relates to a cleaning apparatus, a semiconductor manufacturing apparatus, and a semiconductor manufacturing line used in the production of semiconductors.
  • the present invention relates to terminating the front and back surfaces of silicon wafers with hydrogen atoms to supply silicon wafers free from contamination.
  • the present invention relates to a possible cleaning device, a semiconductor manufacturing device, and a semiconductor manufacturing line. Background art
  • the cleaning process for removing impurities such as dust is one of the most important processes in the semiconductor production process.
  • the present invention makes it possible to suppress the adhesion of dust that causes a decrease in yield by terminating the back and front surfaces of the substrate with hydrogen, and also to enable the removal of the dust easily in the gas phase, thereby providing a cleaner substrate.
  • a semiconductor manufacturing apparatus, and a semiconductor manufacturing line capable of surely sending waste to the final process of a semiconductor production line and completely eliminating the influence of dust in each process. I do. Disclosure of the invention
  • the cleaning apparatus of the present invention is a cleaning apparatus for cleaning and drying the back surface of a substrate, comprising: a means for supplying a chemical solution to the back surface of the substrate to remove an oxide film generated; and a hydrogen active species on the substrate surface exposed by the means. And a means for spraying a gas containing: a dangling bond on the back surface of the substrate is terminated with hydrogen by the hydrogen active species.
  • the cleaning apparatus preferably includes at least means for supplying a chemical solution to the surface of the substrate to clean the surface, and means for blowing a gas containing a hydrogen active species onto the surface.
  • the semiconductor manufacturing apparatus is a semiconductor manufacturing apparatus having a substrate transport means, wherein a treatment tank connected to the transport means and exposing a back surface of the substrate and terminating dangling bonds with hydrogen is provided. And
  • the processing tank that exposes the back surface of the base and terminates the danglide with hydrogen is preferably the above-described cleaning apparatus of the present invention.
  • the semiconductor manufacturing line of the present invention has a plurality of semiconductor processing tanks. In a semiconductor manufacturing line provided with transport means between semiconductor processing tanks, at least one processing tank for exposing the back surface of the base and terminating dangling bonds with hydrogen is provided. Further, it is preferable that the treatment tank exposing the back surface of the base and terminating the dangling bond with hydrogen is the cleaning apparatus of the present invention.
  • the semiconductor manufacturing line of the present invention comprises: at least one processing tank; means for holding a substrate in the processing tank; and a water concentration of 10 Op Db or less on the surface of the substrate. It is preferable to provide a gas-phase dust removing device comprising a means for supplying gas and a means for generating a Bernoulli pressure difference on the surface of the base. Action
  • a cleaning solution (chemical solution, ultrapure water, etc.) is supplied to the back of the base to remove the oxide film formed on the back, and then a gas containing active hydrogen species is sprayed on the back of the base while the back of the base is being dried. Thereby, the back surface of the base can be simply and completely terminated with hydrogen.
  • Hydrogen active species are very active and have been considered to have a short life in the past.However, by adopting the structure of the present invention, hydrogen active species are generated by catalytic reaction immediately before introduction into the cleaning tank of the cleaning device.
  • the use of a high-purity inert gas and hydrogen gas, and the means for supplying the gas containing hydrogen active species is made of a material having a catalytic action, thereby substantially extending the service life.
  • the substrate surface can be terminated with hydrogen by washing the substrate surface with various chemicals and ultrapure water or the like, and then spraying a gas containing a hydrogen active species onto the substrate surface during drying.
  • FIG. 1 shows the cleaning apparatus used in this embodiment.
  • 101 is a cleaning tank
  • 102 is a plurality of chemical liquid nozzles connected to various chemical liquid supply devices (not shown)
  • 103 is a substrate
  • 104 is a rotary chuck (substrate holding member)
  • 105 is an exhaust / drain port
  • 106 and 107 are gases containing active hydrogen species on the front and back surfaces of the substrate, respectively.
  • a means for supplying gas (gas supply pipe), 108 is a nozzle for supplying a chemical solution and ultrapure water for removing the oxide film on the back surface of the wafer while moving, 109 is a rotary motor, 110 is a rotary motor Means for generating a hydrogen active species provided with a heating means 111; a valve 112 for controlling the supply of a gas containing a hydrogen active species, whereby the gas is supplied to the front surface or the back surface of the substrate or both.
  • 1 13 is a mixer of N 2 gas and H gas
  • 1 14 is a mixed gas pipe
  • 1 15 and 1 16 are N 2 gas pipe and H 2 gas pipe, respectively. It is connected to an N 2 gas supply device and H 2 gas supply device (not shown) via a flow controller.
  • the cleaning tank can be one that introduces various chemicals or ultrapure water into the inside and cleans the base by immersing the base.
  • the base is mounted on a rotary chuck and the base is rotated while the chemical or ultrapure water is applied.
  • the method shown in FIG. 1 in which washing is performed by spraying water is preferable.
  • a gas containing a hydrogen active species is finally blown onto the substrate and dried, so that dangling bonds generated by the cleaning can be effectively terminated with hydrogen.
  • the members constituting the cleaning tank are made of a material having resistance to various chemicals used for cleaning.
  • the drying of the substrate is preferably performed while rotating the substrate.
  • the means 10 for generating the hydrogen active species for example, a material in which a part or the whole of the inner surface of a pipe is made of a material serving as a catalyst for a hydrogen radicalization reaction can be used.
  • a mixed gas of an inert gas and a hydrogen gas By flowing a mixed gas of an inert gas and a hydrogen gas through such a pipe, the hydrogen gas in the mixed gas can be converted into active species such as radicals.
  • the heating temperature is preferably from 300 to 450 ° C, more preferably from 300 to 400 ° C.
  • the amount of active hydrogen species generated is small.When the temperature exceeds 450 ° C, the amount of active hydrogen species increases, but a passive film is formed on the inner surface of the pipe. Otherwise, impurities may be released from the surface and mixed into the mixed gas.
  • a material containing Ni is preferable, and for example, a Ni-based alloy is preferable. Also, among Ni-based alloys, Mo-based alloys and Ni-W-based alloys are preferred. More specifically, for example, Hastelloy (registered trademark) can be mentioned.
  • a passivation film formed by heat treatment in an oxidizing atmosphere having an impurity concentration of 1 Op pb or less is formed on the surface of the stainless steel.
  • a passivation film formed by performing a reduction treatment in a hydrogen atmosphere after the formation of the passivation film is more preferable. Since the surface of such a passivation film contains chromium oxide as a main component, the incorporation of impurities into the mixed gas can be suppressed.
  • the passivation film is mainly composed of chromium oxide, but contains nickel oxide, and the nickel oxide acts as a catalyst and contacts the surface of the passivation film. It is considered that the activated hydrogen gas is activated to generate active hydrogen species.
  • the means 10 for generating hydrogen active species may be, for example, a fiber-like, mesh-like, sponge-like, or tubular catalyst provided in a vessel in addition to the above-mentioned pipe-like one.
  • such a shape is advantageous in that the contact area with the hydrogen gas is increased and the activation efficiency is increased.
  • the impurities in the inert gas and the hydrogen gas used in the present invention are preferably at most 10 ppb, more preferably at most 1 PPb.
  • the mixing ratio of the hydrogen gas in the mixed gas is preferably 0.1% or more, more preferably 10% or more. Within this range, the generation amount of hydrogen active species is further improved.
  • He gas and N are used as the inert gas.
  • Gas, Ar gas and the like are preferably used. In particular, N 2 gas and Ar gas are preferable.
  • the means 6 and 7 for supplying a gas containing a hydrogen active species according to the present invention are used to guide an active gas containing a hydrogen active species generated by a means for generating a hydrogen active species to a cleaning tank. Generally used.
  • the inner surface be made of a material containing, for example, Ni.
  • the means for supplying the gas containing hydrogen active species preferably has at least one or more independent nozzles directly above the surface of the substrate and directly below the rear surface of the substrate. It has a large number of independent nozzles, and by irradiating gas from multiple directions, it is possible to terminate hydrogen on the front and back surfaces of the substrate.
  • the means for supplying the gas to the back surface of the substrate is such that a chemical solution or the like is sprayed during the back surface cleaning. It is preferable to use a movable structure that can retreat or a structure that can cover the nozzle so that it does not enter the inside of the nozzle.
  • the silicon wafer to be cleaned is rotated, for example, ozone-added ultrapure water (ozone: 2 to 10 ppm) ⁇ ultrapure water rinse ⁇ hydrofluoric acid + hydrogen peroxide + ultrapure water (eg, volume Ratio: 0.03: 1: 2) ⁇ ultrapure water rinse-ammonium hydroxide + hydrogen peroxide + ultrapure water (for example, volume ratio of 0.05: 1: 5) ⁇ ultrapure water rinse ⁇ fluor hydrogen acid tens ultrapure water ⁇ ultrapure water rinsing ⁇ spin drying (e.g. N 2 H 2 gas concentration in the gas: 1 0 to 1 0 0%) carried out in such process.
  • a nitrogen gas to which a hydrogen active species has been added is introduced into the cleaning chamber.
  • the natural oxide film In order to remove the natural oxide film formed on the silicon wafer before the cleaning process and the natural oxide film generated during the cleaning process, the natural oxide film must be removed with hydrofluoric acid at least immediately before the drying process. U, want to do.
  • the chamber for performing these cleanings is preferably a sealed one, and is preferably sealed at least with some inert gas.
  • Addition of active hydrogen species Since all processes are performed in a single sealed cleaning tank that can introduce nitrogen gas, a natural oxide film can be formed on the silicon surface exposed by hydrofluoric acid. In addition, it is possible to completely terminate the silicon wafer surface with hydrogen active species during the drying process.
  • the concentration of the hydrogen active species can be adjusted by providing a mass flow controller at the introduction portion of each gas to the hydrogen active species generator. By controlling the concentration, it becomes possible to supply the necessary amount of active hydrogen species when necessary and to terminate the hydrogen.
  • FIG. 2 a gas-phase dust removing apparatus for removing dust adhering to the substrate surface in a vapor phase in a processing tank such as a film forming tank or an etching tank and a transfer system will be described.
  • reference numeral 201 denotes a vacuum processing tank.
  • the degree of vacuum in the vacuum processing tank 201 is 10—10 by a turbo molecular pump 202 and a roughing pump 203.
  • 205 is an evacuation passage via an on-off valve 204 It is connected to the vacuum processing tank 201.
  • the vacuum processing chamber 2 0 for example made of a vacuum molten SUS 3 1 6 L, its inner surface 2 0 6 mirror polished, and C r 2 0 3 film is passivated is formed, released The surface has very little adsorption of gas and moisture.
  • Reference numeral 207 denotes a base, for example, silicon wafer.
  • the present invention is not limited to silicon wafers, but may be another semiconductor substrate (for example, a compound semiconductor substrate), a magnetic substrate, or a superconductor substrate.
  • Reference numeral 208 denotes a support (holding means for holding the substrate) for holding the substrate 207, and has, for example, a substrate holding mechanism using a vacuum or electrostatic attraction method.
  • Reference numeral 209 denotes dust adhering to the substrate 207
  • reference numeral 210 denotes a flow of, for example, N 2 gas blown from the gas outlet 211 onto the substrate 207.
  • Reference numeral 211 denotes an N 0 gas outlet provided on the substrate, which is connected to the gas supply passage 2 1 2, and a high-speed N 2 gas is supplied onto the substrate 1 07 by the gas supply control valve 2 1 3. It is for flowing constantly.
  • 214 is a high-pressure gas supply source, for example, a high-pressure N n cylinder.
  • the high-pressure N 2 cylinder 2 14 is connected to the steady-state flow path 2 16 and the high-pressure gas control unit 2 17 through the high-pressure gas supply path 2 15.
  • the steady flow passage 2 16 is provided with, for example, an electric heating mechanism or another heating mechanism 2 18 so that the N 2 gas can be heated to about 80 ° C. 217 has a mechanism to control the intermittent and agile flow of high-pressure gas.
  • the intermittent high-speed opening and closing of the high-speed on-off valve 29.2.20 causes intermittent and rapid pressure fluctuation from the high-pressure section 2 21 through the gas supply passage 2 12 and the gas outlet 2 1 1. Can affect the steady gas flow over the substrate surface.
  • the frequency of pressure fluctuations is, for example, 10 times Z times.However, drive the high-speed on-off valves 219, 220 at a higher speed, or install multiple high-pressure gas control units 217 in parallel. As a result, the frequency of intermittent pressure fluctuations can be further increased.
  • the moisture concentration in the vacuum processing tank 201 can be kept at least at 10 ppm or less, and the absorbed moisture amount at this time is approximately Each is 1 ⁇ 10 15 molecules cm 2 . This translates into a bilayer on average. Hit.
  • Reference numeral 22 denotes an exhaust passage for N 2 gas and dust, which is connected to the vacuum processing tank 201 via an on-off valve 22 3, and dust separated from the substrate is subjected to the flow of N 2 gas.
  • the gas is discharged to an exhaust gas treatment device such as a scrubber outside the system via the on-off valve 224.
  • the exhaust passage 222 is connected to a roughing pump 203 via an on-off valve 222 and a rough exhaust passage 222 to keep the inside of the vacuum processing tank at a reduced pressure (for example, 1 OOT orr). while N 9 can it to discharge the gas and dust associated with it.
  • Reference numeral 227 denotes, for example, an Xe lamp for raising the temperature of the substrate 207.
  • Reference numeral 2 28 denotes a light inlet connected to the vacuum processing tank 201, for example, provided with a window material 229 made of optically polished synthetic quartz or the like, so that light from the Xe lamp 227 is provided.
  • the surface of the substrate 207 can be uniformly irradiated. Further, by controlling the output of the Xe lamp 227, the temperature of the base body 207 can be raised and maintained at a constant temperature (for example, 100 ° C.).
  • Reference numeral 230 denotes a transfer chamber provided with a mechanism for freely transferring a substrate between the vacuum processing tank 201 and another processing tank (not shown).
  • the substrate transfer chamber 230 is connected to a vacuum processing tank 201 via an on-off valve 231.
  • the moisture concentration in the substrate transfer chamber 230 is controlled to 10 ppm or less, as in the vacuum processing tank 201.
  • the present inventor has found that when dust is adsorbed on the substrate surface in the gas phase, the forces acting between the dust and the substrate are a liquid crosslinking force and a Van der Waals force. In particular, when water is present on the substrate surface, the liquid crosslinking force is dominant.
  • the liquid cross-linking force between the dust adhering to the substrate surface and the substrate is eliminated, and the dust is deposited on the substrate only by van der Waalska, which is at most as small as the square of the distance between the lattices of the substrate.
  • van der Waalska which is at most as small as the square of the distance between the lattices of the substrate.
  • the inventor has found that this is achieved when the amount of adsorbed moisture on the surface of the substrate is substantially less than 2 molecular layers. It is not clear how these bilayers are present, but the definition of two or less molecular layers means not only when the entire substrate surface is two or less molecular layers, but also when there is no water molecular force. It can be said that this also includes the case in the department.
  • the moisture concentration of the gas supplied to the substrate surface must be less than 100 ppb. It is preferable to minimize the release of moisture from the members constituting the treatment layer or the surface of the gas supply system piping, etc., so that such members are made of a passivation film mainly composed of chromium oxide. Use the one formed on the surface of the contact part of
  • a means for generating a Bernoulli pressure difference on the surface of the base is provided.
  • the present inventor has found that when the influence of the liquid crosslinking force is eliminated, dust can float and be removed from the substrate surface if a Bernoulli pressure difference is applied to the substrate surface.
  • N 2 gas is blown at a flow rate of 2501 / min from the gas outlet (eg, N 9 gas) 2 11 in FIG. 2, the average flow rate of N 2 gas at the substrate surface Is about 3 O m / sec. This N. It is thought that a stagnant layer occurs in the region of several m / s to several 10 m from the surface of the substrate due to the high-speed flow of .
  • the pressure difference occurring at the interface of the high-speed flow and stop flow layer of the flow rate of about 3 O m / sec was found to be approximately 0. 5 k gZ cm 2 approximately.
  • This pressure difference gives relatively large debris, for example of the order of 5 and 1 m, a kinetic energy perpendicular to the substrate. Based on mechanical considerations, this vertical kinetic energy can be sufficient to separate dust of 1 zm or more from the substrate surface.
  • the gas flow rate may be appropriately determined according to the particle size of the dust, but is preferably 1 O mZ sec or more, and more preferably 3 O mZ sec or more. In the case of such a high-speed flow, the removal efficiency is improved. Note that the upper limit is preferably 5 O mZ sec.
  • shock waves Available from Atsuta substrate surface in the stop flow layer with high velocity flow only N 2 into the following areas several im L, even According to Bernoulli's theorem Pressure difference can be generated. Due to this pressure difference, dust on the surface of the substrate gives kinetic energy in a direction perpendicular to the surface of the substrate.
  • dust can be removed from the surface of the substrate by the above operation.
  • a Xe lamp for example, a gas (for example, N 2 gas) heated to TC) such as 8 (TC) also removes moisture adsorbed on the substrate surface. This further promotes the effect of reducing the liquid crosslinking force.
  • the attached dust On the surface of the substrate, where the force acting on the substrate and the dust is expressed only by van der Waals forces, the attached dust always moves freely on the substrate surface by Brownian motion.
  • the energy of the Brownian motion is determined by the temperature. For example, if the temperature of the dust is increased, the dust moves on the substrate surface by the kinetic energy proportional to the temperature. For example, raising the temperature with a Xe lamp or the like can activate the dust browning motion. Dust moving around the surface of the substrate jumps up due to irregularities of several angstrom on the surface of the substrate, and at this moment, the van der Lusker working between the substrate and the dust is minimized, and the dust is most detached from the substrate. It is easy to do.
  • Brownian motion is an irregular motion of dust, so there is also motion in the direction perpendicular to the substrate. Therefore, even in this operation, van der Waalska working between the substrate and the dust can be minimized.
  • the inventor of the present invention has found that a dust removal effect appears at a substrate temperature of 80 ° C or higher.However, as described above, it is more effective to activate the browning motion if the temperature is as high as possible. For obvious reasons. However, in the actual process, it is very difficult to determine the type of dust adhering to the substrate surface, and naturally includes organic substances and the like. Therefore, heating at a temperature lower than the temperature at which organic substances are dissolved (for example, 200 ° C or lower) is ideal. You. Furthermore, considering that the entire process is performed at a low temperature (around 400 ° C), heating above 300 ° C may have an effect on the heat treatment even if no organic matter is observed. Not preferred. For the above reasons, the heating of the substrate and the dust is preferably carried out at a temperature of from 80 ° C. to 300 ° C., more preferably from 80 ° C. to 200 ° C.
  • a reactive gas for example, C 1 2 gas or which the gas obtained by mixing an inert gas such as A r on the substrate surface constantly flowing, metallic dust on the substrate, for example if a a 1, a 1 C 1 3 is formed by the reaction of C 1 2 gas and a 1, considering that this is a volatile Then, it can be easily removed by synergy with intermittent and agile pressure fluctuation.
  • a reactive gas such as o 3 can be applied to organic dust, and for example, HF gas can be considered to SiO 2 dust.
  • the ionized gas neutralizes the static electricity of the substrate, cancels the electrostatic force acting between the dust in the gas phase and the substrate, and attaches or removes the dust in the gas phase to the substrate. Prevents redeposition.
  • a deuterium lamp or a soft X-ray light source can be used.
  • FIG. 1 is a conceptual diagram showing an example of the cleaning device of the present invention.
  • FIG. 2 is a conceptual diagram showing an example of a gas-phase dust removing device.
  • FIG. 3 is a conceptual diagram illustrating a semiconductor manufacturing apparatus according to the second embodiment.
  • FIG. 4 is a conceptual diagram showing another example of the semiconductor manufacturing apparatus.
  • FIG. 5 is a conceptual diagram showing another example of the semiconductor manufacturing apparatus.
  • FIG. 6 is a conceptual diagram illustrating a semiconductor manufacturing line according to the third embodiment.
  • 106, 107 means for supplying gas containing hydrogen active species (gas supply pipe),
  • the silicon wafer was subjected to hydrogen termination on the front and back surfaces, and then an oxide film was formed.
  • a 10 m diameter Ni wire was rolled and bundled and inserted into a cylindrical stainless steel (SUS 316) container whose inner surface was electropolished. The mixture was heated to 350 ° C over 13 days.
  • stainless steel tubes (SUS 316) whose inner surfaces were electropolished were used for the gas supply tubes 6 and 7. The mixing ratio of the mixed gas, N 2 90%, and the H 2 10%.
  • N 2 gas containing a hydrogen active species is introduced from nozzle 6, and while rotating the nozzle at 150 to 3000 rpm, 1 ) Caro ultrapure water with ozone (2-1 Oppm), 2) Hydrofluoric acid + hydrogen peroxide + ultrapure water (0.03: 1: 2), 3) ammonium hydroxide + hydrogen peroxide + Ultrapure water (0.05: 1: 5), hydrofluoric acid + hydrogen peroxide + ultrapure water (0.03: 1: 2)), and ultrapure water were sequentially dropped and washed. Subsequently, while blowing a gas containing a hydrogen active species from the mixed gas supply pipes 6 and 7 onto the front and back of the wafer, the wafer was rotated at 1500 rpm and dried.
  • the wafer cleaned as described above was transferred to a plasma oxidation apparatus by a transfer means in a transfer chamber, and a 1-Om oxide film was formed.
  • a non-backside treated nano was similarly transported to a plasma oxidation apparatus to form an oxide film.
  • FIG. 3 shows a semiconductor device characterized in that at least a part thereof includes means for automatically transporting a silicon wafer in which the substrate surface on the back surface of the silicon wafer is exposed and the exposed silicon surface is terminated by hydrogen atoms.
  • 1 shows an embodiment of a production line.
  • reference numeral 301 denotes a cleaning device of the present invention, and 302 and 303 denote cleaning devices.
  • This is a vacuum chamber for storing husets.
  • 304 is a transfer mechanism having means for transferring the silicon wafer to each processing tank.
  • Numeral 305 denotes a vacuum tank for transferring silicon wafers to each processing tank.
  • 306, 307, 308, 309, 310 are used for dry etching, plasma film formation, thermal decomposition film formation, sputter film formation, etc. for processing silicon wafers, for example. It is a vacuum chamber.
  • the cleaning device 301 terminates the back surface of the wafer with hydrogen atoms, and the back surface of the wafer hardly adsorbs moisture. This also contributes to preventing dust from adhering.
  • anisotropic dry etching can be realized as a result of preventing dust on the back surface.
  • the dust may rise in the dry etching tank and adhere to the wafer surface.
  • the dust becomes a fine mask and may cause an etching residue, which causes a low yield in manufacturing large-scale integrated circuits of silicon.
  • no etching residue was observed, and this problem could also be solved.
  • the tanks are stored between the tanks for storing the oxygen cassettes 302 and 303 and the vacuum tanks for transporting the silicon wafers to the processing tanks 300, respectively. It is important to connect the cleaning device to the cluster-type semiconductor manufacturing device, terminate the silicon wafer and the back surface with hydrogen, and prevent dust from adhering to the wafer and the back surface.
  • the cleaning apparatuses of the present invention may be installed at other positions, and the cleaning apparatus of the present invention may be at least partially integrated with a cluster-type semiconductor manufacturing apparatus and at least partially integrated.
  • the present apparatus may be incorporated anywhere in a line of single-wafer type semiconductor manufacturing apparatuses.
  • reference numeral 601 denotes a nitrogen atmosphere tunnel for automatically transporting a silicon wafer to each semiconductor manufacturing apparatus for each wafer (hereinafter referred to as a nitrogen tunnel).
  • 602 is a silicon wafer to be transported.
  • 603 is a reactive ion etching device
  • 604 is a plasma film forming device.
  • Reference numeral 605 denotes a cluster-type semiconductor manufacturing apparatus having a plurality of processing tanks and means for transferring silicon wafers to the processing tanks.
  • 606 is a stepper, for example, and 607 is an ion implantation device.
  • 608 is the cleaning device shown in FIG.
  • 609, 610, 61 1, and 612 are the dust removing devices shown in FIG.
  • Numeral 613 is a vacuum tank having means for transferring silicon wafers to each processing tank.
  • Reference numerals 615, 616, and 617 denote vacuum chambers such as a dry etching tank, a thermal decomposition film forming tank, and a sputter film forming tank for processing a silicon wafer.
  • Each tank and nitrogen tunnel are made of, for example, vacuum-melted S US 316, the inner surface of which is mirror polished and made of Cr. 0 3 film in the released gas and moisture are passivated adsorption that has become extremely small surface.
  • the water concentration of the high-pressure gas used in this treatment tank is 10 to 100 ppb. Thus, it goes without saying that the water concentration in each of the vacuum chambers and the nitrogen tunnel is kept at most 10 ppm or less.
  • the great effect of this embodiment is that, for example, the silicon wafer is isolated from atmospheric components and manufacturing workers by a nitrogen tunnel, and the dust attached in the treatment tank is removed by the dust removing device of the present invention.
  • Dust that is dusting for example, dust that adheres to workers wearing dust-proof clothing in a clean room and adheres to the air during the work due to the blowing of air from the cuffs and collars of the dust-proof clothing
  • the dust attached to the wafer in the processing tank is removed by the dust removing device of the present invention, and the wafer is transferred to the next processing tank. For the first time, a large clean room space is no longer required.
  • the metal formed by the reaction processing tank sputters the metal wall of the processing tank in the case of heavy metal contamination.
  • Incorporating the dust removal device of the present invention into a consistent line and removing attached dust prevents the gate destruction of the MOS transistor formed on silicon and the increase in leakage current at the transistor junction.
  • the contaminated dust is alkaline ions, it is effective in preventing deterioration of the transistor characteristics such as a change in the threshold value of the transistor.
  • the wafer since the wafer is transported in a nitrogen tunnel, it does not come into contact with atmospheric oxygen gas.
  • the aluminum surface is not oxidized, so that boron trichloride gas oxidizes the aluminum surface.
  • a semiconductor manufacturing line that can minimize the effects of dust generated in the processing tank and transport was achieved.
  • a cleaning device and a dust removing device may be installed in the semiconductor manufacturing line. It can be installed at any position.
  • hydrogen-terminated silicon has high resistance to particulate contamination.
  • the adhesion of fine particles is less likely to occur, and cross contamination due to back surface contamination of the silicon wafer in the semiconductor manufacturing process and re-adhesion to the back face of the silicon wafer from the transport device can be prevented.
  • the yield in the semiconductor production process is improved due to the reduction of contamination by fine particles, and the cost of products can be reduced.
  • dust attached to the surface of the substrate can be removed from the surface of the substrate in the gas phase, regardless of the dust made of any material.
  • the present invention Provides for the first time a means of removing dust in the gas phase by means of dry processing, which has been difficult, and this dry process makes it possible for the first time to automate and inline the dust removal process of semiconductor and other manufacturing equipment and semiconductor and other manufacturing lines. And the production yield can be dramatically increased.

Abstract

L'invention concerne un appareil de lavage, un appareil de production de semi-conducteurs et une chaîne de production dont les articles sont améliorés par la finition des faces opposées des substrats avec de l'hydrogène pour éloigner la poussière et par l'élimination de cette poussière, si elle subsiste, dans la phase gazeuse pour fournir des substrats plus propres en vue du traitement final dans la chaîne de production de semi-conducteurs. L'appareil comprend un dispositif, qui élimine la pellicule d'oxyde du dos du substrat par application d'une solution chimique, et un dispositif permettant de projeter un gaz, contenant une espèce d'hydrogène actif, sur la surface du substrat exposée par le dispositif précédent, ce qui permet de fixer les combinaisons libres présentes au dos de ce substrat grâce à l'espèce d'hydrogène actif. L'appareil comprend en outre un collecteur de poussière en phase gazeuse qui comporte au moins un récipient, un dispositif permettant de maintenir le substrat dans ce récipient, un dispositif qui fournit un gaz, à teneur en humidité de 100 ppb au maximum, à la surface du substrat, et un dispositif qui y produit un effet de Bernoulli.
PCT/JP1994/001977 1993-11-22 1994-11-22 Appareil de lavage, appareil de production de semi-conducteurs et chaine de production de semi-conducteurs WO1995015006A1 (fr)

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JP29228193A JPH07142438A (ja) 1993-11-22 1993-11-22 洗浄装置、半導体製造装置及び半導体製造ライン
JP5/292281 1993-11-22

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WO1995015006A1 true WO1995015006A1 (fr) 1995-06-01

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JP4135780B2 (ja) * 1997-08-29 2008-08-20 ユーシーティー株式会社 薬液定量注入装置および方法
JP3419439B2 (ja) * 1998-07-31 2003-06-23 三菱住友シリコン株式会社 半導体基板を洗浄する方法
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KR100677965B1 (ko) * 1999-11-01 2007-02-01 동경 엘렉트론 주식회사 기판처리방법 및 기판처리장치
KR100563102B1 (ko) 2002-09-12 2006-03-27 에이에스엠엘 네델란즈 비.브이. 표면들로부터 입자들을 제거함으로써 세정하는 방법,세정장치 및 리소그래피투영장치
AU2003264642B2 (en) 2002-12-02 2009-08-06 Tadahiro Ohmi Semiconductor Device and Method of Manufacturing the Same
JP4532957B2 (ja) * 2004-03-29 2010-08-25 財団法人国際科学振興財団 雰囲気制御された接合装置、接合方法および電子装置
CN101263589B (zh) * 2005-09-13 2010-08-25 大见忠弘 半导体装置的制造方法及半导体制造装置
JP5335843B2 (ja) * 2011-03-22 2013-11-06 公益財団法人国際科学振興財団 電子装置用基板の製造法
KR101317903B1 (ko) * 2012-03-28 2013-10-16 엘지디스플레이 주식회사 스퍼터 장치와 이를 이용한 어레이 기판의 제조 방법

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