WO1991003085A1 - Boite pour diode laser amelioree - Google Patents

Boite pour diode laser amelioree Download PDF

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Publication number
WO1991003085A1
WO1991003085A1 PCT/US1990/004175 US9004175W WO9103085A1 WO 1991003085 A1 WO1991003085 A1 WO 1991003085A1 US 9004175 W US9004175 W US 9004175W WO 9103085 A1 WO9103085 A1 WO 9103085A1
Authority
WO
WIPO (PCT)
Prior art keywords
package
semiconductor
junction
capsule
liquid
Prior art date
Application number
PCT/US1990/004175
Other languages
English (en)
Inventor
Marvin D. Bausman, Jr.
Original Assignee
Cray Research, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cray Research, Inc. filed Critical Cray Research, Inc.
Publication of WO1991003085A1 publication Critical patent/WO1991003085A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H01S5/0243—Laser is immersed in the coolant, i.e. the whole laser chip is immersed in the liquid for cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02232—Liquid-filled housings

Definitions

  • the invention relates to a package for a semiconductor device and more particularly, to a liquid cooled package for use with a light emitting laser diode.
  • Semiconductor devices are usually operated in sealed packages to prevent contamination of the semiconductor.
  • Various types of packaging have been adopted for this purpose. In operation the package performs several functions. For example, active semiconductors which have electrical power supplied to them typically use the package as a radiating surface to remove heat generated by the semiconductor device.
  • active semiconductors which have electrical power supplied to them typically use the package as a radiating surface to remove heat generated by the semiconductor device.
  • high power semiconductor diodes it is conventional to mount the P-N junction structure so that the anode is electrically and thermally coupled to a metal stud. The stud then operates as a heat sink and an electrical connection.
  • the P-N junction is forward biased and light is generated at this junction.
  • the light is emitted at right angles to the junction plane in the case of the LED and parallel to the junction plane in the case of a LASER diode.
  • a Laser diode may be supplied in a package with a transparent window or with a fiber optic pig-tail. In either case the transparent medium is aligned with the plane of the p-n junction and is used to extract the optical power from the diode.
  • LASER diodes are susceptible to thermal runaway and as a consequence temperature based feedback is used to control drive current.
  • Cooling of the P-N junction in prior art packaged has been through the use of thermal conduction from the semiconductor to a heat sink. In some cases thermoelectric cooling or Peltier effect devices are applied to the heat sink to control the temperature of the junction.
  • SUMMARY OF THE INVENTION the present invention provide a package which provides direct liquid cooling of the P-N junction. Although the package is useful for LED applications, the package is particularly useful when used with LASER diodes.
  • the package includes a closed capsule which contains liquid cooling medium.
  • the package may include a window or other device for coupling the optical energy out of the package.
  • FIG. 1 is a diagram of an embodiment of the invention.
  • FIG. 2 is a graph of the power output characteristics of invention.
  • FIG. 3 is a graph computed from the data presented in Figure 2.
  • FIG. 4 is an alternate embodiment of the invention.
  • FIG. 5 is an alternate embodiment of the invention.
  • FIG. 1 shows a package 10 which is generally cylindrical in form.
  • This capsule contains a cooling fluid 16 which substantially fills the interior of the package or cavity.
  • a small port 14 may be provided to fill the capsule.
  • the preferred cooling fluid is liquid fluorocarbon.
  • the preferred coolant is manufactured under the trade name Fluorinert, and this product may be purchased from 3M Company, St. Paul. Minnesota.
  • the preferred member of the Fluorinert family depends upon the power dissipation required by the semiconductor chip 18. It is highly desirable to prevent boiling of the coolant at the P-N junction and this requirement can be used to select the specific heat capacity and boiling point for the Fluorinert.
  • the Fluorinert exhibits a specific heat of 0.25 g-cal/g-C and has a boiling point greater than 96 C and less than 216 C.
  • the Fluorinert exhibits a specific heat of 0.25 g-cal/g-C and has a boiling point greater than 96 C and less than 216 C.
  • the vapor bubbles form, they stick to the facets until they grow to a size that allows their buoyancy to overcome surface tension. This creates an insulating vapor layer at the points of highest temperature on the surface of the die, i.e., the facets, which is exactly the thing one wishes to avoid if one is trying to cool the laser efficiently. Additionally, the location of bubble formation makes the optical distortion even more pronounced as the bubbles form at the points the optical beams exit the die.
  • the LASER diode chip 18 is forward biased by supplying electrical power to the terminals 20 and 21.
  • a photo diode 22 may be provided to monitor the optical power output.
  • This sensor may also form a sensor to for a drive current control system.
  • the diode chip is mounted so that it is aligned with a window 24.
  • the support 28 may form an electrical connection for the diode as shown in this Figure.
  • the optical energy is emitted from the chip normal to the plane of P-N junction.
  • the figure illustrates that the P- N junction 27 is separated from the heat sinking support 28 by the bulk P channel material 29. However the junction 27 is substantially completely surrounded by the Fluorinert which fills the cavity.
  • the optical power output is a function of the forward current.
  • Figure 2 is a graph drawn from experimental data depicting the optical power output as a function of forward drive current.
  • the first curve 40 is taken from a Mitsubishi ME-4402 LASER diode which has the P-N junction operated in a gaseous atmosphere.
  • the second curve 42 is taken with the same diode however the P-N junction is submerged in Fluorinert.
  • the graph set forth as Figure 3 is computed form the Figure 2 data set and displays a curve 44 which shows the difference in output power as a function of the input current supplied to the LASER diode. This figure demonstrates that the output power from the diode is increased by submerging the diode in the Fluorinert. Experimental work suggest that this observed effect is not the result of improved optical coupling but is directly attributable to operating the P-N junction in the Fluorinert.
  • FIG 4 shows an alternate embodiment of the present invention.
  • the diode is mounted on stud 26 which forms a heat sink for the device.
  • the stud encloses a cylindrical cavity formed by wall 12 and window 24.
  • the anode of the diode is connected to a stud which functions as a support and an electrical connection for the semiconductor laser chip 18.
  • Figure 5 shows a pig-tail version of the package shown in figure 4.
  • an optical fiber 46 is positioned within the cavity to couple light energy from the chip 18 to the fiber.
  • the fiber itself may be covered with a protective sheath 48 which is connected to the capsule with a strain relief 50.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention se rapporte à une boîte de montage (10) pour semi-conducteur, qui permet de faire fonctionner la jonction type p-n active (27) d'un semi-conducteur photo-émetteur (18) dans un fluide de thermotransfert liquide (16). La boîte (10) assure un couplage optique pour l'extraction d'énergie lumineuse.
PCT/US1990/004175 1989-08-21 1990-07-25 Boite pour diode laser amelioree WO1991003085A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39655489A 1989-08-21 1989-08-21
US396,554 1989-08-21

Publications (1)

Publication Number Publication Date
WO1991003085A1 true WO1991003085A1 (fr) 1991-03-07

Family

ID=23567692

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1990/004175 WO1991003085A1 (fr) 1989-08-21 1990-07-25 Boite pour diode laser amelioree

Country Status (1)

Country Link
WO (1) WO1991003085A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0658933A2 (fr) * 1993-12-16 1995-06-21 Sharp Kabushiki Kaisha Dispositifs à semi-conducteur et méthode de fabrication
GB2287577A (en) * 1994-03-14 1995-09-20 Fujitsu Ltd Laser light source units
WO2008052327A1 (fr) * 2006-10-31 2008-05-08 Tir Technology Lp Ensemble d'éclairage
US7505268B2 (en) 2005-04-05 2009-03-17 Tir Technology Lp Electronic device package with an integrated evaporator
US7906794B2 (en) 2006-07-05 2011-03-15 Koninklijke Philips Electronics N.V. Light emitting device package with frame and optically transmissive element

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121639A (en) * 1977-03-30 1978-10-24 Mitsubishi Electric Corp Photo coupling method
JPS57141986A (en) * 1981-02-25 1982-09-02 Fujitsu Ltd Cooling method for semiconductor laser
JPS59125643A (ja) * 1982-12-22 1984-07-20 Fujitsu Ltd 液冷式半導体装置
JPS61206284A (ja) * 1985-03-08 1986-09-12 Toshiba Corp 半導体レ−ザ装置
JPH01179483A (ja) * 1988-01-08 1989-07-17 Canon Inc 半導体レーザー装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121639A (en) * 1977-03-30 1978-10-24 Mitsubishi Electric Corp Photo coupling method
JPS57141986A (en) * 1981-02-25 1982-09-02 Fujitsu Ltd Cooling method for semiconductor laser
JPS59125643A (ja) * 1982-12-22 1984-07-20 Fujitsu Ltd 液冷式半導体装置
JPS61206284A (ja) * 1985-03-08 1986-09-12 Toshiba Corp 半導体レ−ザ装置
JPH01179483A (ja) * 1988-01-08 1989-07-17 Canon Inc 半導体レーザー装置

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Volume 18, No. 7, December 1975, IBM Corp., (Armonk, New York, US), H.E. KORTH: "Optical Multichannel Connection of Integrated Modules", page 2187 see the whole article *
PATENT ABSTRACTS OF JAPAN, Volume 11, No. 41(E-478) 6 February 1987 & JP, A, 61206284 (Toshiba Corp.) 12 September 1986 see the Abstract *
PATENT ABSTRACTS OF JAPAN, Volume 2, No. 153 (E-79) 22 December 1978 & JP, A, 53121639 (Mitsubihi Denki K.K.) 24 November 1978 see the Abstract *
PATENT ABSTRACTS OF JAPAN, Volume 6, No. 243 (E-145), 2 December 1982, & JP, A, 57141986 (Fujitsu K.K.) 2 September 1982 see the Abstract *
PATENT ABSTRACTS OF JAPAN, Volume 8, No. 250 (E-279) 16 November 1984 & JP, A, 59125643 (Fujitsu K.K.) 20 July 1984 see the Abstract *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0658933A2 (fr) * 1993-12-16 1995-06-21 Sharp Kabushiki Kaisha Dispositifs à semi-conducteur et méthode de fabrication
EP0658933A3 (fr) * 1993-12-16 1995-12-13 Sharp Kk Dispositifs à semi-conducteur et méthode de fabrication.
GB2287577A (en) * 1994-03-14 1995-09-20 Fujitsu Ltd Laser light source units
GB2287577B (en) * 1994-03-14 1997-11-05 Fujitsu Ltd Laser light source unit
US5726813A (en) * 1994-03-14 1998-03-10 Fujitsu Limited Optical apparatus with replacement semiconductor laser
US7505268B2 (en) 2005-04-05 2009-03-17 Tir Technology Lp Electronic device package with an integrated evaporator
US7906794B2 (en) 2006-07-05 2011-03-15 Koninklijke Philips Electronics N.V. Light emitting device package with frame and optically transmissive element
WO2008052327A1 (fr) * 2006-10-31 2008-05-08 Tir Technology Lp Ensemble d'éclairage
US7631986B2 (en) 2006-10-31 2009-12-15 Koninklijke Philips Electronics, N.V. Lighting device package

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