WO1983002036A1 - Semiconductor diode - Google Patents

Semiconductor diode Download PDF

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Publication number
WO1983002036A1
WO1983002036A1 PCT/DE1982/000176 DE8200176W WO8302036A1 WO 1983002036 A1 WO1983002036 A1 WO 1983002036A1 DE 8200176 W DE8200176 W DE 8200176W WO 8302036 A1 WO8302036 A1 WO 8302036A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor diode
zones
diode according
semiconductor
conductive
Prior art date
Application number
PCT/DE1982/000176
Other languages
German (de)
French (fr)
Inventor
Bosch Gmbh Robert
Original Assignee
Heinke, Wolfgang
Heyke, Klaus
Michel, Hartmut
Schwenk, Siegfried
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heinke, Wolfgang, Heyke, Klaus, Michel, Hartmut, Schwenk, Siegfried filed Critical Heinke, Wolfgang
Priority to JP82502712A priority Critical patent/JPS58502029A/en
Priority to AU89062/82A priority patent/AU8906282A/en
Publication of WO1983002036A1 publication Critical patent/WO1983002036A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Definitions

  • the invention relates to a semiconductor diode according to the preamble of the main claim.
  • semiconductor diodes of this type are already known. Such diodes can have either the sequence of zones p + pn + or p + nn + .
  • US Pat. No. 3,949,120 shows a semiconductor diode with a p + pn + structure.
  • the three successive zones are doped so low that their breakdown voltage and their forward losses are too high for many applications, especially in motor vehicle alternators.
  • the semiconductor diode according to the invention with the characterizing features of the main claim has the advantage that the forward losses are significantly reduced compared to conventional three-layer diodes. Therefore, the diode according to the invention is suitable for use at high ambient temperatures, e.g. B. as a main current diode in a motor vehicle alternator, particularly suitable.
  • the semiconductor diode according to the invention has a low breakdown voltage and a high load capacity in the breakdown area, which has a particularly favorable effect in the event of a "battery-free operation" fault.
  • the manufacturing method according to claim 3 brings the additional advantage of unusually low costs, low tolerances and high manufacturing reliability.
  • FIG. 1 shows a section through the first embodiment
  • FIG. 2 shows a section through the second embodiment.
  • Figure 1 shows the first embodiment.
  • Semiconductor substrate 1 with p + conductivity has a p ++ conductive zone 11 diffused in from above and an n ++ conductive zone 13 diffused in from below. The remaining p + -conducting central region of the substrate 1 is designated by 12. On the substrate 1 is after the diffusion, a contact metallization 4 is applied to both surface sides.
  • the exemplary embodiment according to FIG. 2 differs from that according to FIG. 1 only in that the substrate 1 serving as the starting material and thus the middle zone 12 in the finished diode consists of n + -conductive material.
  • the three successive zones 11, 12, 13 are doped to such an extent that a breakdown voltage of between 17 and 24 volts results.
  • the doping of the middle, p + - or n + -conductive zone 12 is greater than or equal to 10 18 / cm 3 .
  • these zones are produced in one process step using solid dopant sources.
  • the semiconductor diode according to the invention is particularly suitable as a limiter diode for voltage limitation. It is particularly suitable as a main current diode in a motor vehicle three-phase generator.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Charge By Means Of Generators (AREA)
  • Thyristors (AREA)
  • Synchronous Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

The semiconductor diode comprises three consecutive doped areas (11, 12, 13) in the following order p?++p?+n?++. The three consecutive areas (11, 12, 13) are sufficiently doped so as to have a breaking voltage comprised between 17 and 24 volts.

Description

Halbleiterdiode Semiconductor diode
Stand der TechnikState of the art
Die Erfindung geht aus von einer Halbleiterdiode nach der Gattung des Hauptanspruchs.The invention relates to a semiconductor diode according to the preamble of the main claim.
Halbleiterdioden dieser Art sind bereits bekannt. Solche Dioden können entweder die Zonenfolge p+pn+ oder p+ nn+ haben. Die US-PS 3 949 120 zeigt beispielsweise eine Halbleiterdiode mit p+pn+ Struktur. Bei diesen bekannten Dioden sind die drei aufeinanderfolgenden Zonen so niedrig dotiert, daß deren Durchbruchsspannung und deren Durchlaßverluste für viele Anwendungs zwecke, insbesondere im Kraftfahrzeug-Drehstromgenerator, zu hoch sind. Vorteile der ErfindungSemiconductor diodes of this type are already known. Such diodes can have either the sequence of zones p + pn + or p + nn + . For example, US Pat. No. 3,949,120 shows a semiconductor diode with a p + pn + structure. In these known diodes, the three successive zones are doped so low that their breakdown voltage and their forward losses are too high for many applications, especially in motor vehicle alternators. Advantages of the invention
Die erfindungsgemäße Halbleiterdiode mit den kennzeichnenden Merkmalen des Hauptanspruchs hat demgegenüber den Vorteil, daß die Durchlaßverluste gegenüber üblichen Dreischichtdioden deutlich reduziert sind. Daher ist die erfindungsgemäße Diode zum Einsatz bei hohen Umgebungstemperaturen, z. B. als Hauptstromdiode im Kraftfahrzeug-Drehstromgenerator, besonders geeignet. Die erfindungsgemäße Halbleiterdiode besitzt eine niedrige Durchbruchspannung und eine hohe Belastbarkeit im Durehbruchgebiet, was sich insbesondere im Störfall "batterieloser Betrieb" günstig auswirkt. Das Herstellungsverfahren gemäß Anspruch 3 bringt den zusätzlichen Vorteil ungewöhnlich niedriger Kosten, geringer Toleranzen und hoher Fertigungssicherheit.The semiconductor diode according to the invention with the characterizing features of the main claim has the advantage that the forward losses are significantly reduced compared to conventional three-layer diodes. Therefore, the diode according to the invention is suitable for use at high ambient temperatures, e.g. B. as a main current diode in a motor vehicle alternator, particularly suitable. The semiconductor diode according to the invention has a low breakdown voltage and a high load capacity in the breakdown area, which has a particularly favorable effect in the event of a "battery-free operation" fault. The manufacturing method according to claim 3 brings the additional advantage of unusually low costs, low tolerances and high manufacturing reliability.
Zeichnungdrawing
Zwei Ausführungsbeispiele von Halbleiterdioden gemäß der Erfindung sind in der Zeichnung dargestellt und in der nachfolgenden Beschreibung näher erläutert. Es zeigen: Figur 1 einen Schnitt durch das erste Ausführungsbeispiel und Figur 2 einen Schnitt durch das zweite Ausführungsbeispiel.Two embodiments of semiconductor diodes according to the invention are shown in the drawing and explained in more detail in the following description. FIG. 1 shows a section through the first embodiment and FIG. 2 shows a section through the second embodiment.
Beschreibung der AusführungsbeispieleDescription of the embodiments
Figur 1 zeigt das erste Ausführungsbeispiel. In einFigure 1 shows the first embodiment. In a
Halbleitersubstrat 1 mit p+-Leitfähigkeit ist von oben her eine p++-leitfähige Zone 11 und von unten her eine n++-leitfähige Zone 13 eindiffundiert. Der verbleibende p+-leitfähige mittlere Bereich des Substrats 1 ist mit 12 bezeichnet. Auf das Substrat 1 ist nach der Diffusion an beiden Oberflächenseiten eine Kontaktmetallisierung 4 aufgebracht.Semiconductor substrate 1 with p + conductivity has a p ++ conductive zone 11 diffused in from above and an n ++ conductive zone 13 diffused in from below. The remaining p + -conducting central region of the substrate 1 is designated by 12. On the substrate 1 is after the diffusion, a contact metallization 4 is applied to both surface sides.
Das Ausführungsbeispiel nach Figur 2 unterscheidet sich von demjenigen nach Figur 1 lediglich dadurch, daß das als Ausgangsmaterial dienende Substrat 1 und damit bei der fertigen Diode die mittlere Zone 12 aus n+-leitfähigem Material besteht. Bei beiden Ausführungsbeispielen sind die drei aufeinanderfolgenden Zonen 11, 12, 13 derart hoch dotiert, daß sich eine Durchbruchsspannung zwischen 17 und 24 Volt ergibt. Die Dotierung der mittleren, p+- bzw. n+-leitfähigen Zone 12 ist dabei größer oder gleich 1018/cm3.The exemplary embodiment according to FIG. 2 differs from that according to FIG. 1 only in that the substrate 1 serving as the starting material and thus the middle zone 12 in the finished diode consists of n + -conductive material. In both exemplary embodiments, the three successive zones 11, 12, 13 are doped to such an extent that a breakdown voltage of between 17 and 24 volts results. The doping of the middle, p + - or n + -conductive zone 12 is greater than or equal to 10 18 / cm 3 .
Zu Erzielung einer hohen und gleichmäßigen Dotierung der beiden äußeren, p++- bzw. n++ -leitfähigen Zonen 11 und 13 werden diese Zonen in einem Verfahrensschritt unter Verwendung von festen Dotierstoffquellen hergestellt.To achieve a high and uniform doping of the two outer, p ++ and n ++ conductive zones 11 and 13, these zones are produced in one process step using solid dopant sources.
Die erfindungsgemäße Halbleiterdiode ist vorzüglich als Begrenzerdiode zur Spannungsbegrenzung geeignet. Sie eignet sich besonders gut als Hauptstromdiode in einem Kraftfahrzeug-Drehstromgenerator. The semiconductor diode according to the invention is particularly suitable as a limiter diode for voltage limitation. It is particularly suitable as a main current diode in a motor vehicle three-phase generator.

Claims

Ansprüche Expectations
1. Halbleiterdiode mit drei aufeinanderfolgenden, unterschiedlich dotierten Zonen (11, 12, 13), dadurch gekennzeichnet, daß die Zonenfolge p++ p+n++ oder p++n+n++ ist und daß die drei aufeinanderfolgenden Zonen (11, 12, 13) derart hoch dotiert sind, daß sich eine Durchbruchsspannung zwischen 17 und 24 Volt ergibt.1. Semiconductor diode with three successive, differently doped zones (11, 12, 13), characterized in that the zone sequence is p ++ p + n ++ or p ++ n + n ++ and that the three successive zones (11 , 12, 13) are so heavily doped that there is a breakdown voltage between 17 and 24 volts.
2. Halbleiterdiode nach Anspruch 1, dadurch gekennzeichnet, daß die Dotierung der mittleren, p+- bzw. n+ -leitfähigen Zone (12) größer oder gleich 1018 /cm3 ist.2. Semiconductor diode according to claim 1, characterized in that the doping of the middle, p + - or n + -conductive zone (12) is greater than or equal to 10 18 / cm 3 .
3. Verfahren zur Herstellung einer Halbleiterdiode nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß zur Erzielung einer hohen und gleichmäßigen Dotierung der äußeren, p++ - bzw. n++ -leitfähigen Zonen (11, 13) diese Zonen (11, 13) in einem Verfahrensschritt unter Verwendung von festen Dotierstoffquellen hergestellt werden. 3. A method for producing a semiconductor diode according to claim 1 or 2, characterized in that in order to achieve a high and uniform doping of the outer, p ++ or n ++ conductive zones (11, 13), these zones (11, 13 ) are produced in one process step using solid dopant sources.
4. Verwendung einer Halbleiterdiode nach Anspruch 1 oder 2 als Begrenzerdiode zur Spannungsbegrenzung.4. Use of a semiconductor diode according to claim 1 or 2 as a limiter diode for voltage limitation.
5. Verwendung einer Halbleiterdiode nach Anspruch 1 oder 2 als Hauptstromdiode in einem Kraftfahrzeug Drehstromgenerator. 5. Use of a semiconductor diode according to claim 1 or 2 as a main current diode in a motor vehicle three-phase generator.
PCT/DE1982/000176 1981-11-25 1982-09-03 Semiconductor diode WO1983002036A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP82502712A JPS58502029A (en) 1981-11-25 1982-09-03 semiconductor diode
AU89062/82A AU8906282A (en) 1981-11-25 1982-09-03 Halbleiterdiode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3146609.5811125 1981-11-25
DE19813146609 DE3146609A1 (en) 1981-11-25 1981-11-25 SEMICONDUCTOR DIODE

Publications (1)

Publication Number Publication Date
WO1983002036A1 true WO1983002036A1 (en) 1983-06-09

Family

ID=6147111

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1982/000176 WO1983002036A1 (en) 1981-11-25 1982-09-03 Semiconductor diode

Country Status (6)

Country Link
EP (1) EP0094941A1 (en)
JP (1) JPS58502029A (en)
AU (1) AU8906282A (en)
DE (1) DE3146609A1 (en)
IT (1) IT1153012B (en)
WO (1) WO1983002036A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435464A1 (en) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Rectifier diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4138280A (en) * 1978-02-02 1979-02-06 International Rectifier Corporation Method of manufacture of zener diodes
US4171528A (en) * 1977-06-13 1979-10-16 International Telephone And Telegraph Corporation Solderable zener diode
DE2916114A1 (en) * 1978-04-21 1979-10-31 Hitachi Ltd SEMI-CONDUCTOR DEVICE
DE2928758A1 (en) * 1979-07-17 1981-02-05 Bosch Gmbh Robert High stability planar Zener diode - has split low doped N zones with higher doped N bridge zone under oxide layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171528A (en) * 1977-06-13 1979-10-16 International Telephone And Telegraph Corporation Solderable zener diode
US4138280A (en) * 1978-02-02 1979-02-06 International Rectifier Corporation Method of manufacture of zener diodes
DE2916114A1 (en) * 1978-04-21 1979-10-31 Hitachi Ltd SEMI-CONDUCTOR DEVICE
DE2928758A1 (en) * 1979-07-17 1981-02-05 Bosch Gmbh Robert High stability planar Zener diode - has split low doped N zones with higher doped N bridge zone under oxide layer

Also Published As

Publication number Publication date
EP0094941A1 (en) 1983-11-30
JPS58502029A (en) 1983-11-24
AU8906282A (en) 1983-06-17
IT1153012B (en) 1987-01-14
IT8224209A0 (en) 1982-11-12
DE3146609A1 (en) 1983-07-07

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