WO1982004159A1 - An information recording medium - Google Patents

An information recording medium Download PDF

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Publication number
WO1982004159A1
WO1982004159A1 PCT/JP1982/000166 JP8200166W WO8204159A1 WO 1982004159 A1 WO1982004159 A1 WO 1982004159A1 JP 8200166 W JP8200166 W JP 8200166W WO 8204159 A1 WO8204159 A1 WO 8204159A1
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WO
WIPO (PCT)
Prior art keywords
information recording
recording medium
material layer
information
light
Prior art date
Application number
PCT/JP1982/000166
Other languages
French (fr)
Japanese (ja)
Inventor
Corp Sony
Original Assignee
Oyama Tomoya
Aoki Yoshio
Watanabe Kenjiro
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Publication date
Application filed by Oyama Tomoya, Aoki Yoshio, Watanabe Kenjiro filed Critical Oyama Tomoya
Publication of WO1982004159A1 publication Critical patent/WO1982004159A1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te

Definitions

  • the present invention is applicable to an optical reflection type or confusion type video disk, digital audio disk, etc., and is suitable for an information recording medium, that is, information is formed on an information recording layer. Information is recorded as a sequence of bits, and information recorded is reproduced by the interaction of light reflection or transmission between the bit portion and the non-bit portion of the information recording layer. It relates to the information recording medium.
  • a recordable information recording medium capable of writing arbitrary information to a medium, for example, a disc for each user.
  • a recordable information recording medium is, as shown in FIG. 1, for example, as shown in FIG. 1 on a transparent substrate (1) such as acrylic resin.
  • An object of the present invention is to provide an information recording medium capable of avoiding such drawbacks and recording information with sufficiently low recording power.
  • This smooth surface ' is made of an alloy containing Bi, ⁇ or at least one of these, or an alloy mainly containing these, including In, Sb, Sn, Pb, etc.
  • An information recording layer made of 3 ⁇ 4 point metal and having a thickness of 50 to 1000 is deposited, particularly through a heat insulating material layer.
  • the recording of information on this information recording layer is performed based on the base level. This is performed by irradiating recording light, for example, a semiconductor laser beam having a wavelength of 8000 according to the recorded information.
  • the heat insulating material layer has a high transmittance to the recording light having the predetermined wavelength, that is, a light transmittance of, for example, 50% or more, and has heat resistance to the recording temperature of the recording layer.
  • a material layer having a low thermal conductivity and an adiabatic effect above the substrate for example, a material mainly composed of Se, S, that is, containing at least 40 at% of Se or S, if it is clear, CuS e, as 2 S e 3, etc.
  • the thickness is selected to have a high transmittance due to the interference effect due to the interaction of the reflected light, that is, a thickness near the thickness at which the reflectance is minimized. If this heat insulating material layer does not have more than 300, the heat insulating effect cannot be achieved. In this case, since the base is selected to have a large thickness of, for example, 1.2 mm, it does not cause interference effect, and the base side is not provided as described above. When irradiating with the recording light or irradiating with the reading light, a material having high transparency to the light is selected.
  • Fig. 1 and Fig. 2 show examples of the conventional information recording medium according to the present invention, respectively, and Fig. 3 and Fig. 5 show the new examples of the information recording medium according to the present invention, respectively.
  • measurements show the relationship between the thickness and HikariToru ⁇ of the heat ⁇ , Fig. 4 and 6 husband The measurement curve of the light transmittance of a single layer of the heat insulating material is shown.
  • a heat insulating material layer ⁇ 3 made of As 2 Se 3 is deposited on a substrate & 1) made of ⁇ , and an information recording layer (12) made of a 400-thick Te film is deposited thereon. Is attached.
  • Figure 3 takes in this example As 2 Se 3 layer of insulation 3) having a thickness of 8000 Hanshirube ⁇ the reflectance of the laser beam measurement result of the wavelength of against. In, This ensures that, As 2 Se 3 insulation It can be seen that the reflectance is low when the thickness of the material layer (13) is about 500 or 1800. It is desirable that this thickness be as thin as possible as long as the heat insulating effect is achieved. For this reason, the As 2 Se 3 heat insulating material layer 3) or 500 I is selected.
  • Curve (16) in Fig. 5 shows a new thermal material layer tt3? Composed of a Se film on a substrate composed of PMA (I, and an information composed of a 4001 thick Te film on top of this.
  • Measurement of reflectance of 80001 long semiconductor laser with respect to the thickness of Se heat insulating material layer of the information recording medium of the present invention formed by applying recording layer (12) The results show that the reflectance is low when the thickness of the Se insulation layer (13) is about 600 or 1800. This thickness is within the range of the insulation effect.
  • the thickness is as thin as possible.
  • -Curve 7) in Fig. 6 shows the measurement of the transmittance for one laser beam of wavelength 8000 when only the Se insulating material layer 3) is applied as a single layer on the PMMA substrate 1). This indicates that the Se heat insulating material layer 3) itself has a high tightness.
  • the information recording medium according to the present invention forms a recording layer (12) on which recording bits are formed by melting through a heat insulating material layer 3) on a substrate ⁇ ).
  • the substrate (11) is not deformed by the heat:
  • the shape of the recording bit can be effectively prevented from being disturbed, and recording with a high S ⁇ ratio can be performed.
  • the provision of the heat insulating layer (13) has the effect of dissipating that heat to the substrate ai) during recording.
  • the thickness of the heat insulating material layer 3) can be determined by selecting a thickness that shows low reflectivity due to interference. Even when recording light is radiated from the breeder, the recording material due to the heat material layer (13) is provided. Increase can be avoided.
  • a semiconductor laser of 10 mW as recording light had to be used, According to the invention, it can be as low as 6 mW, which makes it possible to record at a low energy of 30 to 40% of the conventional one.
  • the reading of information from the recording medium according to the present invention is carried out as usual, for example, by using a semiconductor laser having a lower power than at the time of recording.
  • the difference is detected, or the difference in transmittance or reflectance is detected and read out.
  • Irradiation of the recording light or the reading light to the medium can be performed from the side opposite to the base (11) side.
  • the present invention is applicable to optical video disks, digital audio disks, and the like.

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  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

An information recording medium adapted for the application to an optical reflection or transmission video disk, digital audio disk, etc., in which an information recording layer (12) formed of metal with a low melting point is formed through a light transmission heat insulating material layer (13), on a substrate (11) in such a manner that the thickness of the layer (13) is so selected that the medium exhibits the minimum reflectivity to the information transmitting light due to its interference effect causing the light to be absorbed, thereby recording information at low power.

Description

明 細 .謇 . - 発明の名称 情報記録媒侔  -Name of invention Information recording medium
技術分野  Technical field
本発明は光学式の反射型或いは透遏型 ビデオ ディ ス ク 、 デ ジ タ ルオ ーディ オデ ィ ス ク等に.適用して好適な 情報記録媒体、 すなわち、 情報を情報記録層に形成さ れた ビ ッ ト の列と し て記録し、 該情報記録層の ビ ッ ト の部分と そ う でない部分よ り の光の反射あるいは透過 の相逢に よ つて記録された情報を再生する様に した情 報記録媒体に関する も のである。  INDUSTRIAL APPLICABILITY The present invention is applicable to an optical reflection type or confusion type video disk, digital audio disk, etc., and is suitable for an information recording medium, that is, information is formed on an information recording layer. Information is recorded as a sequence of bits, and information recorded is reproduced by the interaction of light reflection or transmission between the bit portion and the non-bit portion of the information recording layer. It relates to the information recording medium.
月 牙、 νΈΓ  Moon Fang, νΈΓ
通常の光学式の反射型或いは透 il型 ビデオディ ス ク 、 デ ジ タ ルオーディ オデイ ス ク等の情報記録媒体におい ては、 一般ュ一ザ一はそのディ ス ク に記録された情報 を 読み出すのみの使用態様を と つている。  For information recording media such as ordinary optical reflective or translucent video discs and digital audio discs, general users can only read the information recorded on the disc. Is used.
し力 しながら、 一 ¾ユーザ一に いて、 その媒体、 例えばディ ス ク に任意の情報を書き込むこ と のでき る 記録可能な情報記録媒钵も提案されている。 こ の よ う な記録可 '能な情報記録 体- じて-は、 nえば第 1 図に 示すよ う に、 ア ク リ ル街脂等の透 基板（1)上に記録材 料 ¾ (2)と し て厚さが 200 程度の奪い低 点金属膜、 ^えは- ビ ス マ ス B i 、 テノレ ル Te 等の膜を被着し、 これ に レーザ—光 β を記録情報信号に じて照射し て これ . を還さコ、的に溶融させ、 こ の溶 SS ¾に いて透孔ないし は凹部、 すなわち記録ピ ッ ト を形成してその記録を行 う ものがあ る。 と ころ力 この よ う な構成に よ る記録媒 体においては、 その記録ビ ッ ト の形成時に、 その熱に よ って基体（1) も 、 こ の ピ ッ ト の形成部が溶融され、 記 録ピ ッ ト の周辺部に盛 り 上 り が生じた り 、 ビ ッ ト 形状 に乱れを生 じた り する。 一方、 基体（1)と して耐熱住に す ぐれたガ ラ ス基体を用いる こ と が考えられるがこの 場合は、 基体（1)の熱伝導率が比較的高いために、 ビッ ト を形成するための熱が基体（1)側に逃げ易 く 、 大きな 記録パ ワ ー したがって大エ ネ ルギ ー の レーザー源を必 要とする と い う 欠点がある。 However, a recordable information recording medium capable of writing arbitrary information to a medium, for example, a disc for each user has been proposed. Such a recordable information recording medium is, as shown in FIG. 1, for example, as shown in FIG. 1 on a transparent substrate (1) such as acrylic resin. 2) A low-point metal film with a thickness of about 200, such as Vis-Mass Bi, Tenorel Te, etc., is deposited, and laser-light β is used as a recording information signal. Irradiate the molten metal to melt it. There is a concave part, that is, a recording pit is formed and the recording is performed. Rolling force In a recording medium having such a configuration, when the recording bit is formed, the heat also causes the base (1) to melt the portion where the pit is formed. The pit rises around the recording pit, or the bit shape is disturbed. On the other hand, it is conceivable to use a glass substrate that is sufficiently heat-resistant for the substrate (1). In this case, however, the bit is formed because the thermal conductivity of the substrate (1) is relatively high. However, there is a drawback in that heat for the heat is easily dissipated to the substrate (1) side, and a large recording power and therefore a laser source with a large energy is required.
発明の開示 Disclosure of the invention
本発明は、 この よ う な欠点を回避し、 十分低い記録 パワ ーで情報の記録を行 う こ と ができ る よ う にした情 報記録媒体を提供チる ものである。  An object of the present invention is to provide an information recording medium capable of avoiding such drawbacks and recording information with sufficiently low recording power.
すなわち、 本発明においては、 例えば第 2 図に示す よ う に、 樹脂例えば P ΜΛίΑ ( メ タ ク リ ノレ該エ ス テ ル樹 脂 ） 、 或いは ガ ラ ス等よ り 成 り平滑面を有する基体を 設け、 こ の平滑面'に、 Bi ， Τέ も し く はこれらの少 く と も一種を含む合金、 またはこれら を主体と し、 In， Sb， Sn， Pb 等を含む合金等よ り 成る ^ ¾点金属よ り 成 り 、 厚さが 50 〜 1000 の情報記録層を、 特に断熱材層を 介して被着する。  That is, in the present invention, as shown in FIG. 2, for example, as shown in FIG. 2, a substrate having a smooth surface made of a resin such as P P (methacryloline ester resin), glass, or the like. This smooth surface 'is made of an alloy containing Bi, 合金 or at least one of these, or an alloy mainly containing these, including In, Sb, Sn, Pb, etc. ^ An information recording layer made of ¾ point metal and having a thickness of 50 to 1000 is deposited, particularly through a heat insulating material layer.
こ の情報記録層に対する情 ¾の記録は、 基体倆か 一— ΓΙ ら記録光、 例えば波長 800 0 の半導体レーザー光 を 記録情報に応 じて照射す.る こ と に よって.行 う 。 The recording of information on this information recording layer is performed based on the base level. This is performed by irradiating recording light, for example, a semiconductor laser beam having a wavelength of 8000 according to the recorded information.
断熱材層は、 この所定の波長の記録光に対し高い透 過率、 すなわち光透過性たと えば 5 0 %以上の透遏 率を 有し、 記録層の記録時の温度に対し耐熱性を有し、 基 体に く らベて熱伝導度が低 く 断熱効果を有する材料層、 例えば Se， S を主体とする材料、 すなわち S e， S の何 れかを 40 原子％以上含む、 冽えば CuS e , As 2 S e 3 等を 3 00 以上の厚さを有し、 更にその厚さが基 と 新熱 材料層の界面よ り の反射光と 断熟材料層 と記録層の界 面か ら の反'射光の相互作用に よ る干渉効果に よって高 い透過率を示す厚さにすなわち反射率が極小になる厚 さの近傍の厚-さに選定される。 こ の断熱材料層は 3 00 以上はないと断熱効杲を期侍出来ない。 そ して、 この 場合、 基 は、 例えば 1.2腳 とい う 大な る厚さに選ばれ ているので、 干渉効杲を生 じる こ と はない ものであ り 、 上述したよ う に基体側からその記録光の照射を行った り 、 或いは読み出し光の照射を行 う 場合にはこ らの 光に対し透明度の高い材料を選定する。 The heat insulating material layer has a high transmittance to the recording light having the predetermined wavelength, that is, a light transmittance of, for example, 50% or more, and has heat resistance to the recording temperature of the recording layer. Then, a material layer having a low thermal conductivity and an adiabatic effect above the substrate, for example, a material mainly composed of Se, S, that is, containing at least 40 at% of Se or S, if it is clear, CuS e, as 2 S e 3, etc. have 3 00 or more thick, and whether further field plane of the thickness of base and new thermal material layer interface by Ri of the reflected light and cross mature material layer and the recording layer of The thickness is selected to have a high transmittance due to the interference effect due to the interaction of the reflected light, that is, a thickness near the thickness at which the reflectance is minimized. If this heat insulating material layer does not have more than 300, the heat insulating effect cannot be achieved. In this case, since the base is selected to have a large thickness of, for example, 1.2 mm, it does not cause interference effect, and the base side is not provided as described above. When irradiating with the recording light or irradiating with the reading light, a material having high transparency to the light is selected.
図面の簡単な説明 BRIEF DESCRIPTION OF THE FIGURES
第 1図及び第 2図は夫々従来及び本発明による情報記録媒 体の各例を示す.断面図、 第 3 図及び第 5 図は夫々本癸明 に よ る情報記録媒体の各例の新熱枋層の厚さ と光透逼 率 と の関係を示す測定 籙医、 第 4 図及び第 6 は夫 夫その断熱材層の単層における光透過率の測定曲線図 でめ る。 Fig. 1 and Fig. 2 show examples of the conventional information recording medium according to the present invention, respectively, and Fig. 3 and Fig. 5 show the new examples of the information recording medium according to the present invention, respectively. measurements show the relationship between the thickness and HikariToru逼of the heat枋層籙医, Fig. 4 and 6 husband The measurement curve of the light transmittance of a single layer of the heat insulating material is shown.
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
第 2 図を参照し て本発明の一例を説明する。 この例 では ΡλίΜΑ よ り 成る基体 &1)上に As2Se3 獏ょ り 成る断 熱材層 ά3を被着し、 これの上に 400 の厚さの Te 膜よ り 成る情報記録層（12)を被着したものである。 An example of the present invention will be described with reference to FIG. In this example, a heat insulating material layer ά3 made of As 2 Se 3 is deposited on a substrate & 1) made of ΡλίΜΑ, and an information recording layer (12) made of a 400-thick Te film is deposited thereon. Is attached.
第 3 図 この例に ける As2Se3 断熱材層 3)の厚さに 対する 8000 の波長の半導侔レーザー光の反射率の測 定結果.で、 これによ り 、 As2Se3 断熱材層（13)の厚さが' 500 ， 1800 程度のと き、 低い反射率を示している こ とがわかる。 そして この厚 は、 断熱効果を奏する 範囲ででき るだけ薄い方が望ま し く これがため As2Se3 断熱材層な 3) 、 500 Iに選ぶ。 Figure 3 takes in this example As 2 Se 3 layer of insulation 3) having a thickness of 8000 Hanshirube侔the reflectance of the laser beam measurement result of the wavelength of against. In, This ensures that, As 2 Se 3 insulation It can be seen that the reflectance is low when the thickness of the material layer (13) is about 500 or 1800. It is desirable that this thickness be as thin as possible as long as the heat insulating effect is achieved. For this reason, the As 2 Se 3 heat insulating material layer 3) or 500 I is selected.
尚、 第 4 図中曲籙 (13は、 As2Se3 ^熱材層（1¾のみをIn FIG. 4, the curve 籙 (13 is the As 2 Se 3 ^
P MM A基体 ΐ)上に単層に技着した場合の波長 8000 Α の レーザー ^;に対する透逼率の測定結杲を示すもので あ-り 、 この As2se3 urn a¾自 俘 高い透適率を有 し ている と と；^わ力 る。 This shows the measurement result of the tightness of a laser 8000 mm in wavelength when a single layer is applied on a PMM A substrate ΐ). This shows that As 2 se 3 urn a¾ It is said that you have a reasonable rate.
第 5 図中曲線 (16)は、 P M A よ り 成る基体 (I 上に Se 膜よ り 成る新熱材層 tt3?を ¾着し、 これの上に 4001の 厚さの Te 膜よ り 成る情報記録層 (12)を技着して成る本 発明の情報記録媒 の、 Se 断熱材層 の厚さに対す る 80001の ¾長の半導悻レーザー ¾の反射率の測定 結果で、 これに よ り 、 Se 断熱材層（13)の厚さが 600 ， 1800 程度のと き、 低い反射率を示している こ と 力 わかる。 そし てこの厚さは、 断熱効果を奏する範囲 ■■■ Curve (16) in Fig. 5 shows a new thermal material layer tt3? Composed of a Se film on a substrate composed of PMA (I, and an information composed of a 4001 thick Te film on top of this. Measurement of reflectance of 80001 long semiconductor laser with respect to the thickness of Se heat insulating material layer of the information recording medium of the present invention formed by applying recording layer (12) The results show that the reflectance is low when the thickness of the Se insulation layer (13) is about 600 or 1800. This thickness is within the range of the insulation effect.
ででき る だけ薄い方が望ま し く これがため Se 断熱材 層（13)は、 600 に選ぶ。 - 尚、 第 6 図中曲線 7)は、 Se 断熱材層 3)のみを PMMA 基体な1)上に単層に被着した場合の波長 8000 の レ ー ザ一光に対する透過率の測定結杲を示すものであ り 、 こ の Se 断熱材層な3)自 体は高い透逼率を有し ている こ と がわかる。 上述した よ う に本.発明に よ る情報記録媒体は基体 αι) 上に断熱材層 3)を介し た溶融に よって記録ビッ ト が形 成される記録層（12)を形成する よ う に した こ と に よ り 、 記録層 2)への例えば半導体レーザーの照射に よって記 録すなわち溶融を行 う に際し、 その熱：て よつて基体 (11) を変形する こ と な く 、 ま た これに よ り 記録 ビ ッ ト の形 状が乱れた り するを効果的に回避でき、 S Ν比の高い 記録を行 う こ とができ る。 また断熱材'層（13)を設けたこ . と に よ つて記録時にそ'の熱が基板 ai)に放散するを効果 Therefore, it is desirable that the thickness is as thin as possible. -Curve 7) in Fig. 6 shows the measurement of the transmittance for one laser beam of wavelength 8000 when only the Se insulating material layer 3) is applied as a single layer on the PMMA substrate 1). This indicates that the Se heat insulating material layer 3) itself has a high tightness. As described above, the information recording medium according to the present invention forms a recording layer (12) on which recording bits are formed by melting through a heat insulating material layer 3) on a substrate αι). As a result, when recording or melting is performed by irradiating the recording layer 2) with, for example, a semiconductor laser, the substrate (11) is not deformed by the heat: Thus, the shape of the recording bit can be effectively prevented from being disturbed, and recording with a high SΝ ratio can be performed. In addition, the provision of the heat insulating layer (13) has the effect of dissipating that heat to the substrate ai) during recording.
2 0 的に回避する こ とができ る ので記録パヮ 一の偟渎化を20
■■■: ' " はかる こ とができ る。 そ して、 この断熱材層 3)の厚さ は、 干渉 ¾杲に よって低い反射率を示す厚さ 選定す る こ と に よって基体 1)飼から記録光の照射を行 う 場合 において も娇熱材層（13)を設けた こ と に よ る記録パ ヮ 一 の増大を回避でき る。 因みに、 跻爇材層 (13)が設けられ ていない従来の溶融記録型の媒体を用いた場合、 記録 光と しての半導体レーザーは 10 mWの ものを用いる必 要があったものを、 本発明に よ るそれは 6 mWと なし 得、 従来のそれの 30 〜 40 % 低ぃェ ネ ル ギーでの記録 が可能となった。 ■■■: It is possible to measure "". The thickness of the heat insulating material layer 3) can be determined by selecting a thickness that shows low reflectivity due to interference. Even when recording light is radiated from the breeder, the recording material due to the heat material layer (13) is provided. Increase can be avoided. By the way, when using a conventional melt-recording type medium in which the recording material layer (13) is not provided, a semiconductor laser of 10 mW as recording light had to be used, According to the invention, it can be as low as 6 mW, which makes it possible to record at a low energy of 30 to 40% of the conventional one.
尚、 本発明に よ る記録媒侔からの情報の読み出しは 通常の よ う に例えば記録時よ り 低いパ ワ ーの半導体レ 一ザ によって記録 ビ ッ ト と他部における深さないし は厚さの差、 或いは透過率も し く は反射率の差を検出 し てその読み出しを行 う 。  The reading of information from the recording medium according to the present invention is carried out as usual, for example, by using a semiconductor laser having a lower power than at the time of recording. The difference is detected, or the difference in transmittance or reflectance is detected and read out.
また、 記録光或いは読み出し光の媒体に対する照射 は、 基体 (11)側 とは反対側から行 う こ と も でき る。  Irradiation of the recording light or the reading light to the medium can be performed from the side opposite to the base (11) side.
産業上の利用可能性 Industrial applicability
本発明は、 光学式の ビデオ ディ ス ク 、 デ ジ タ ルォ ー ディ オデイ ス ク等に適甩し得る ものである。  INDUSTRIAL APPLICABILITY The present invention is applicable to optical video disks, digital audio disks, and the like.

Claims

請 求 の 範 囲 The scope of the claims
1. 基体上に光透過性断熱材層を介して低融点金属よ り な る情報記録層が形成された情報記録媒体。  1. An information recording medium in which an information recording layer made of a low melting point metal is formed on a base via a light-transmitting heat insulating material layer.
2. 所定波長の情報書き込みの光に対し て透明な基体 上に、 上記情報書き.込みの光に対し て透明な断熱材 料層 と 、 該材料層上に上記情報書き込みの光の選択 的照射に応 じて選択的に溶融除去される低融点金属 よ り な る 情 報 記 録 層 と が 形成された情報記録媒 体。  2. The above-mentioned information is written on a substrate transparent to the information writing light of a predetermined wavelength. The heat insulating material layer transparent to the writing light, and the above-mentioned information writing light is selectively irradiated onto the material layer. An information recording medium on which an information recording layer made of a low-melting-point metal that is selectively melted and removed according to the temperature is formed.
3. 断熱材料層が 3 00 以上の厚さ と された特許請求 ' . の範囲第 2項記載の情報記録媒体。  3. The information recording medium according to claim 2, wherein the heat insulating material layer has a thickness of 300 or more.
4. 情報記録層力 50 〜 1 000 の厚さ と された特許請 求の範囲第 2 項記載の情報記録媒体。  4. The information recording medium according to claim 2, wherein the information recording layer has a thickness of 50 to 1,000.
5. 断熱材料層が、 ■ 3 00叉以上で且つ情報記録体が情 報書き込みの光 iて対してその干渉効果に よ り 橙小の 反射率を示す近傍の厚さ 選定された卷許請求の範 囲第 2 項記載の情報記録媒体。  5. The thickness of the heat-insulating material layer is as follows: (3) The thickness of the vicinity where the information recording medium shows a small orange reflectance due to the interference effect with respect to the light i for writing information. The information recording medium described in paragraph 2 of the scope of the above.
6. 新熱材料層が、 該'層単層.では 50 % ·以上の光透過率6. New thermal material layer, the 'Sotanso. In 50% - or more light transmittance
. を有する特許請求の範 第 2 項記載の情報記録媒体 c 7. 断熱材料層が、 基^よ り 低い熱伝導率を有する特 許請求の範 S第 2項記》：の情報記録媒体。 . Information recording medium c 7. insulating material layer of the claimed range the second term describes having found patent claims range S second Kouki having a low thermal conductivity Ri goodness group ^ ": the information recording medium.
8. 断爇材料層が、 S e 又 S を主体と する組成 ¾ょ り 成る特許請求の範固芎 2 項記載の情報記録媒体。 8. The information recording medium according to claim 2, wherein the insulation material layer is made of a composition mainly composed of Se or S.
9. 新熱材料層が、 Se 又 S を 40 重量％以上含む材 8 料よ り な る特許請求の範囲第 2項記載の情報記録媒 体。 9. Material whose new thermal material layer contains more than 40% by weight of Se or S The information recording medium according to claim 2, wherein the information recording medium comprises eight materials.
PCT/JP1982/000166 1981-05-14 1982-05-13 An information recording medium WO1982004159A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP81/72647810514 1981-05-14
JP56072647A JPS57189356A (en) 1981-05-14 1981-05-14 Information recording medium

Publications (1)

Publication Number Publication Date
WO1982004159A1 true WO1982004159A1 (en) 1982-11-25

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Country Link
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WO (1) WO1982004159A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0240800A2 (en) * 1986-03-19 1987-10-14 Hitachi Maxell Ltd. Optical recording disc
AU619421B2 (en) * 1989-11-29 1992-01-23 Hitachi Limited Optical memory and information processing apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038745A (en) * 1983-08-09 1985-02-28 Nec Corp Optical recording medium and optical recording and reproducing method
JPH11296837A (en) 1998-04-06 1999-10-29 Sharp Corp Magnetic recording medium and recording and reproducing method using it

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50126237A (en) * 1974-03-22 1975-10-03
JPS5538665A (en) * 1978-09-08 1980-03-18 Matsushita Electric Ind Co Ltd Optical recording member
JPS56155793A (en) * 1980-05-06 1981-12-02 Nippon Telegr & Teleph Corp <Ntt> Optical memory medium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50126237A (en) * 1974-03-22 1975-10-03
JPS5538665A (en) * 1978-09-08 1980-03-18 Matsushita Electric Ind Co Ltd Optical recording member
JPS56155793A (en) * 1980-05-06 1981-12-02 Nippon Telegr & Teleph Corp <Ntt> Optical memory medium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0240800A2 (en) * 1986-03-19 1987-10-14 Hitachi Maxell Ltd. Optical recording disc
EP0240800A3 (en) * 1986-03-19 1989-11-29 Hitachi Maxell Ltd. Optical recording disc
AU619421B2 (en) * 1989-11-29 1992-01-23 Hitachi Limited Optical memory and information processing apparatus

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Publication number Publication date
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