JPH0114039B2 - - Google Patents

Info

Publication number
JPH0114039B2
JPH0114039B2 JP56045174A JP4517481A JPH0114039B2 JP H0114039 B2 JPH0114039 B2 JP H0114039B2 JP 56045174 A JP56045174 A JP 56045174A JP 4517481 A JP4517481 A JP 4517481A JP H0114039 B2 JPH0114039 B2 JP H0114039B2
Authority
JP
Japan
Prior art keywords
layer
recording
reflectance
writing
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56045174A
Other languages
Japanese (ja)
Other versions
JPS57159692A (en
Inventor
Kenjiro Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP56045174A priority Critical patent/JPS57159692A/en
Priority to US06/361,384 priority patent/US4460636A/en
Priority to CA000399388A priority patent/CA1180445A/en
Priority to FR8205197A priority patent/FR2502825B1/en
Priority to DE19823211273 priority patent/DE3211273A1/en
Priority to GB8208955A priority patent/GB2097142B/en
Priority to NL8201298A priority patent/NL8201298A/en
Publication of JPS57159692A publication Critical patent/JPS57159692A/en
Publication of JPH0114039B2 publication Critical patent/JPH0114039B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/24—Ablative recording, e.g. by burning marks; Spark recording
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins

Landscapes

  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Description

【発明の詳細な説明】 本発明は光学式の反射型或いは透過型ビデオデ
イスク、デジタルオーデイオデイスク等に適用し
て好適な情報記録媒体に係わる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an information recording medium suitable for application to optical reflective or transmissive video discs, digital audio discs, and the like.

光学式の反射型或いは透過型ビデオデイスク、
デジタルオーデイオタイマー等はすでに実用化さ
れるに至つているが、通常のこの種のデイスクに
おいては、一般ユーザーはそのデイスクに記録さ
れた情報を読み出すのみの使用態様をとつてい
る。 optical reflective or transmissive video discs;
Although digital audio timers and the like have already come into practical use, ordinary users of this type of disk only use the information recorded on the disk.

すなわち、一般ユーザーにおいて、その媒体、
例えばデイスクに任意の情報を書き込むことので
きる記録可能な情報記録媒体も種々提案されては
いるものの未だ実用化されるに至つていない。 In other words, for general users, the medium,
For example, although various recordable information recording media on which arbitrary information can be written on a disk have been proposed, they have not yet been put to practical use.

従来提案されている記録可能な情報記録媒体と
しては、例えばその記録材料層として厚さの薄い
低融点金属膜例えばビスマスBi、テルルTeによ
つて構成し、これにレーザー光を情報信号に応じ
て照射してこれを溶融させ、その溶融部において
透孔すなわち記録ピツトを形成してその記録を行
うものがある。ところがこのように記録ピツトを
形成する記録態様をとるものにおいては、その書
き込みに大きなパワーを必要とし、また例えば溶
融によつて生じた記録ピツトの形状制御がしにく
いためノイズレベルが高くなり、また解像度が低
いすなわち高密度記録がなしにくいという欠点を
有する。 Conventionally proposed recordable information recording media include, for example, a recording material layer composed of a thin, low-melting point metal film such as bismuth Bi or tellurium Te, and a laser beam applied to this in accordance with an information signal. There is a method in which recording is performed by irradiating the material to melt it and forming a through hole, that is, a recording pit, in the melted portion. However, in such a recording mode in which recording pits are formed, a large amount of power is required for writing, and it is difficult to control the shape of the recording pits caused by, for example, melting, resulting in a high noise level. It has the disadvantage of low resolution, that is, it is difficult to perform high-density recording.

本発明においては書き込みパワーの低減化をは
かり、また高密度記録を可能にした情報記録媒体
を提供するものである。 The present invention aims to reduce writing power and provide an information recording medium that enables high-density recording.

すなわち本発明においては、情報記録を溶融或
いは蒸着飛散等によつて記録ピツトとして形成す
るを回避し、情報記録を光学的特性例えば反射
率、透過率、屈折率等の変化として記録するよう
にして低い記録パワーでの記録を可能にし、更に
記録部の解像度を上げ高密度記録を可能にするも
のである。 That is, in the present invention, the information recording is avoided from being formed as recording pits by melting or vapor deposition scattering, and the information recording is recorded as changes in optical properties such as reflectance, transmittance, refractive index, etc. This enables recording with low recording power, and further increases the resolution of the recording section to enable high-density recording.

第１図を参照して本発明を詳細に説明しよう。 The invention will now be explained in detail with reference to FIG.

本発明による情報記録媒体は、基板、例えば光
透過性のガラス基板或いはアクリル樹脂等の樹脂
基板Ｓを設け、これの上に書き込み例えば半導体
レーザー光例えば8000Åの波長光に対してその光
吸収率が大なる第１の層１を被着し、これの上に
主として熱によつてその光学的特性例えば反射
率、透過率、屈折率等が変化し、後述するよう
に、この情報記録媒体の光学的特性に10％以上の
変化を与える第２の層２を被着して成る。 The information recording medium according to the present invention is provided with a substrate, for example, a light-transmissive glass substrate or a resin substrate S made of acrylic resin, on which writing is performed, for example, with respect to semiconductor laser light, for example, light with a wavelength of 8000 Å, and its light absorption rate is A large first layer 1 is deposited thereon, and its optical properties such as reflectance, transmittance, refractive index, etc. change mainly due to heat, and as described later, the optical properties of this information recording medium are changed. A second layer 2 is applied which gives a change in physical properties of 10% or more.

第１の層１としては前述したように書き込み光
例えば半導体レーザー光の吸収率が高くその吸収
によつてその光を熱に変換する効果を有し、また
その熱伝導率が比較的低いことが望まれ、またそ
の第２の層２の光学的特性を変化させ得る熱例え
ば200℃において、この第１の層１が溶融ないし
は軟化などの望ましくない形状変化を伴うことは
ない、すなわち物理的、化学的変化が生じること
のない例えばビスマスBi、或いはテルルTe、或
いはこれらの合金等によつて形成し得る。この第
１の層１の厚さは、例えば50Å〜1500Åに選定さ
れる。 As mentioned above, the first layer 1 has a high absorption rate for writing light, such as semiconductor laser light, and has the effect of converting the light into heat by absorption, and has a relatively low thermal conductivity. At a temperature of, for example, 200° C., which is desired and which may change the optical properties of the second layer 2, this first layer 1 is not accompanied by undesirable shape changes such as melting or softening, i.e. physical, It can be formed of, for example, bismuth Bi, tellurium Te, or an alloy thereof, which does not cause chemical changes. The thickness of this first layer 1 is selected, for example, from 50 Å to 1500 Å.

第２の層２は、上述した書き込み光に対しての
吸収率が高いことが要求されず、その透過率が大
であるもよいが、主として加熱によつて、或る場
合は、熱と共に光の照射によつて前述した光学的
特性が変化する材料例えばセレンSe、或いはSe
を含む合金例えばSeと共にTe、In、Sb、Cdの一
種またはこれらを含む化合物例えば前述した、
Se、TeSe2、Sb2Se3、InSe、In2Se3、CdTeSe3、
CdSe、Sb2TeSe5、As2Se3等を使用し得る。そし
てこの第２の層２の厚さは、例えばSeによつて
構成する場合その厚さを1600Å以下に選定し得
る。 The second layer 2 is not required to have a high absorption rate for the above-mentioned writing light, and may have a high transmittance, but it is mainly heated, and in some cases, it absorbs light together with heat. Materials whose optical properties change as described above when irradiated with
Alloys containing, for example, Se together with one of Te, In, Sb, and Cd, or compounds containing these, for example, the above-mentioned
Se, TeSe 2 , Sb 2 Se 3 , InSe, In 2 Se 3 , CdTeSe 3 ,
CdSe, Sb2TeSe5 , As2Se3 , etc. can be used. When the second layer 2 is made of Se, for example, the thickness can be selected to be 1600 Å or less.

このような本発明による情報記録媒体に対して
その情報の書き込みを行うには、第２の層２を有
する側より、例えば出力10ｍＷの半導体レーザー
（波長8000Å）光をその記録パターンに応じて相
対的に走査する。このときレーザー光は、殆んど
第１の層２を透過して第１の層１に到達するが、
ここにおける吸収率が大であるためにここで光が
吸収されて熱に変換し、このレーザー光の照射部
において第１の層が温度上昇し、これが例えば
200℃に上昇し、この部分上の第２の層２を局部
的に加熱する。加熱された第２の層２は、その光
学的特性例えばその反射率が変化するのでレーザ
ー光が照射された部分とされない部分すなわち光
学的パターンが生じ、光学的情報記録がなされ
る。 In order to write information on such an information recording medium according to the present invention, a semiconductor laser (wavelength: 8000 Å) light with an output of 10 mW, for example, is directed relative to the recording pattern from the side having the second layer 2. scan. At this time, most of the laser light passes through the first layer 2 and reaches the first layer 1, but
Since the absorption rate here is high, light is absorbed here and converted into heat, and the temperature of the first layer rises in the irradiated part of the laser beam, which causes e.g.
The temperature is increased to 200° C. to locally heat the second layer 2 on this part. The heated second layer 2 changes its optical properties, such as its reflectance, so that portions that are irradiated with the laser beam and portions that are not irradiated with the laser beam, that is, optical patterns, are formed, and optical information is recorded.

このように光学的パターンが形成された情報記
録媒体に対する読み出しは、第２の層２における
反射率の差、透過率の差或いは屈折率の差による
情報を読み出すことによつて行うが、この読み出
しは、同様に半導体レーザーによる読み出しによ
つて行い得る。この場合読み出しのパワーは、書
き込み時のパワーに比し十分小さいパワー例えば
３ｍＷによつて行い得るものであり、またこの低
いパワーによる読み出しによれば、この読み出し
に際して再び書き込みがなされるようなことがな
い。 Reading from an information recording medium in which an optical pattern is formed in this way is performed by reading out information based on a difference in reflectance, a difference in transmittance, or a difference in refractive index in the second layer 2. can be similarly performed by reading out using a semiconductor laser. In this case, the reading power can be set to a sufficiently low power, for example, 3 mW, compared to the writing power, and reading with this low power prevents writing from occurring again during this reading. do not have.

尚、上述した第１の層においてその厚さを50Å
〜1500Åに選定することが望まれるのは50Å未満
では、一般の材料の場合単分子層となつて光吸収
が低下して光透過性が大となつてくることによ
り、また1500Å以上では、発熱が有効にこれに隣
接する第２の層に伝わらない部分が生じてきてパ
ワーの損失となるような現象が生じて来ることに
よる。 In addition, the thickness of the first layer mentioned above is 50 Å.
It is desirable to select ~1500 Å because if it is less than 50 Å, ordinary materials will become a monomolecular layer and light absorption will decrease and light transmittance will increase, and if it is more than 1500 Å, heat generation will occur. This is because a phenomenon occurs in which the power is not effectively transmitted to the adjacent second layer, resulting in power loss.

また、第２の層をセレンにおいて1600Å以下に
選定するのは、これがあまり厚いとこれに隣接す
る第１の層からの熱が十分に伝達されない部分が
生じてきて書き込みレーザーの照射によつても光
学的特性が変化しない厚み部分が生じこれがSN
比の低下を招来することによる。 In addition, the reason why the second layer is selected to be less than 1600 Å in selenium is that if it is too thick, there will be areas where heat from the adjacent first layer is not sufficiently transferred, and it will be difficult to irradiate the writing laser. There is a thick part where the optical properties do not change, and this is the SN
This results in a decrease in the ratio.

また上述した例においては、第１の層１上に第
２の層２を形成した場合であるが基板Ｓ上に第２
の層２を形成し、これの上に第１の層１を形成す
るようになすこともできる。また、光吸収を行い
熱に交換する第１の層１を、第２の層２の下層に
なす場合において、第１の層１からの熱が基板Ｓ
側に逃げて無効熱が生じるを回避するために、第
２図に示すように基板Ｓ上に熱伝導度の低い断熱
層例えばSe層３を被着しこれの上に第１の層１
を被着するようにすることもできる。 Furthermore, in the above example, the second layer 2 is formed on the first layer 1, but the second layer 2 is formed on the substrate S.
It is also possible to form a layer 2 and form a first layer 1 thereon. Furthermore, when the first layer 1 that absorbs light and exchanges it into heat is formed below the second layer 2, the heat from the first layer 1 is transferred to the substrate S.
In order to avoid waste heat escaping to the side, a heat insulating layer with low thermal conductivity, such as an Se layer 3, is deposited on the substrate S as shown in FIG.
It is also possible to cover it with

第３図は、ガラス基板Ｓ上に400Åの厚さのTe
膜よりなる第１の層１を被着し、これの上にSe
よりなる第２の層２を被着した場合において、第
２の層２の膜厚を変化させた場合の、第１の層１
側から半導体レーザー光（波長8000Å）を照射し
た場合の、その反射率を測定した結果を示すもの
である。尚、第３図中１１は第２の層２の熱処理
前の反射率を示し、曲線１２は、第２の層２に
200℃の熱処理を行つた場合、すなわち半導体レ
ーザー光による書き込みを行つた後の反射率を測
定したものである。これにより200℃の熱処理、
すなわち書き込みによつてその反射率すなわち透
過率が変化しているのがわかる。この場合、Se
の膜厚すなわち第２の層２の膜厚により反射率が
変化しているのは、膜の干渉効果によるもので第
２の層２の膜厚、すなわちSeの膜厚が700Åの
時、いわゆる反射コーテイングの効果に近くなつ
ている。このように熱処理前と熱処理後すなわち
レーザーの書き込み前と書き込み後における光学
的特性、すなわち反射率の変化を利用し、例えば
第２の層２をセレン400Åの膜厚に選定するとき
は、第３図から明らかなように記録前の反射率35
％が記録後において15％に変化しているのでこれ
ら反射率の差によりその記録情報の読み出しを行
うことができることがわかる。 Figure 3 shows a 400 Å thick Te film on a glass substrate S.
A first layer 1 consisting of a film is deposited, and Se is deposited on top of this.
In the case where the second layer 2 consisting of
This shows the results of measuring the reflectance when semiconductor laser light (wavelength 8000 Å) was irradiated from the side. In addition, 11 in FIG. 3 indicates the reflectance of the second layer 2 before heat treatment, and the curve 12 indicates the reflectance of the second layer 2.
The reflectance was measured after heat treatment at 200°C, that is, after writing with semiconductor laser light. This allows heat treatment at 200℃,
That is, it can be seen that the reflectance, that is, the transmittance changes due to writing. In this case, Se
The reason why the reflectance changes depending on the film thickness of the second layer 2 is due to the interference effect of the film.When the film thickness of the second layer 2, that is, the film thickness of Se is 700 Å, the so-called The effect is close to that of reflective coating. In this way, by utilizing the change in optical properties, that is, reflectance, before and after heat treatment, that is, before and after laser writing, for example, when selecting the second layer 2 to have a selenium thickness of 400 Å, the third As is clear from the figure, the reflectance before recording is 35
% changes to 15% after recording, so it can be seen that the recorded information can be read out based on the difference in reflectance.

第４図は第２の層２としてTeSe2を用いた場合
のその情報記録前及び記録後の情報記録媒体の反
射率、すなわち熱処理前と熱処理後の反射率の測
定結果を示すもので、この例では第２図で説明し
た構造をとつて、ガラス基板Ｓ上に断熱層３とし
て400Åの厚さのSe膜を被着し、これの上に670
ÅのTe膜よりなる第１の層１を被着し、更にこ
れの上にTeSe2よりなる第２の層２を被着した構
造とした場合で、そのTeSe2膜２の厚さを変化し
て夫々の半導体レーザー光（8000Åの波長）に対
する反射率を測定した場合である。尚第４図にお
いて曲線２１は加熱前すなわち書き込み前、曲線
２２は200℃の熱処理後すなわち書き込み後の
夫々の反射率を測定したものであり、この場合例
えば600Åにおいて記録前と後において大きな反
射率の差が見られるので、第２の層２としてこの
厚さに選定するときは、その書き込み読み出しを
高感度をもつて行うことができる。 Figure 4 shows the measurement results of the reflectance of the information recording medium before and after information recording when TeSe 2 is used as the second layer 2, that is, the reflectance before and after heat treatment. In this example, using the structure explained in Fig. 2, a 400 Å thick Se film is deposited on the glass substrate S as the heat insulating layer 3, and a 670 Å thick Se film is deposited on the glass substrate S.
In the case of a structure in which a first layer 1 made of a Te Se film 2 of Å is deposited, and a second layer 2 made of TeSe 2 is deposited on top of this, the thickness of the TeSe 2 film 2 is varied. This is a case where the reflectance of each semiconductor laser beam (wavelength of 8000 Å) was measured. In FIG. 4, curve 21 is the reflectance measured before heating, that is, before writing, and curve 22 is the reflectance measured after heat treatment at 200°C, that is, after writing. In this case, for example, at 600 Å, there is a large reflectance before and after recording. Therefore, when this thickness is selected for the second layer 2, writing and reading can be performed with high sensitivity.

尚、上述した本発明による情報記録媒体例えば
デイスクは、前述したように例えば出力10ｍＷの
半導体レーザーによる記録の場合、デイスクの回
転数を1800rpm程度でその記録を行うことができ
た。またその読み出しはその記録時のパワーより
十分低い例えば３ｍＷで行つて、再度の記録を生
じさせることなくその読み出しのみを行うことが
できた。 The information recording medium according to the present invention, such as a disk, can perform recording at a rotation speed of about 1800 rpm when recording is performed using a semiconductor laser with an output of 10 mW, for example, as described above. Further, the readout was performed at a power sufficiently lower than the power during the recording, for example, 3 mW, so that only the readout could be performed without causing another recording.

またこの情報記録媒体よりの光学的読み出しは
透過型或いは反射型のいずれの方式によつて行う
こともでき、記録後の媒体が記録前の媒体に比
し、その記録部において光学的特性の例えば透過
率（吸収率）が10％以上の変化が得られる第２の
層２の材料を選定することによつてSN比の高い
読み出しを行い得た。 Further, optical reading from the information recording medium can be performed by either a transmission type or a reflection type, and the medium after recording has different optical characteristics in its recording part compared to the medium before recording. By selecting a material for the second layer 2 that provides a change in transmittance (absorption rate) of 10% or more, readout with a high SN ratio could be performed.

上述したように本発明による情報記録媒体によ
れば、主として書き込み光を吸収しこれを熱に変
換する第１の層１とこの熱によつて光学的特性が
変化する第２層２とによつて構成したことによ
り、この光学的特性を変化させる第２の層２とし
てはその光透過率の考慮が不要によつて材料の選
定の自由度が増し、またこの第２の層２を光透過
率の高いものによつて構成するにもかかわらず、
低いパワーでその記録を行うことができ、更にま
た、その情報の記録を透孔等の穿設によるピツト
として形成するものではなく、光学的な変化によ
る記録によつて行うものであるのでその記録パワ
ーをより小さくでき、更にこのような低パワー化
と、ピツトによらざること、つまり形状変化を伴
わないことが相俟つてより解像度の向上をはかる
ことができ、高密度記録が可能になるものであ
る。 As described above, according to the information recording medium of the present invention, the first layer 1 mainly absorbs writing light and converts it into heat, and the second layer 2 whose optical characteristics change due to this heat. With this structure, there is no need to consider the light transmittance of the second layer 2 that changes the optical characteristics, increasing the degree of freedom in selecting the material. Despite being composed of a high percentage of
The recording can be performed with low power, and furthermore, the information is recorded not by forming pits by drilling through holes, etc., but by recording by optical changes. The power can be lowered, and by combining this lower power with the fact that it does not depend on the pit, that is, there is no change in shape, it is possible to further improve the resolution and enable high-density recording. It is.

またこのような低パワーでの書き込みが可能に
なつたことによつて、一般ユーザーにおいてその
情報の書き込みが可能となり、またその書き込み
光と読み出し光とは同じ波長のレーザー光源すな
わち低パワーの半導体光源を用いることができ、
何等情報記録後において媒体に対しての現像処理
等の特別な処理を必要としないので書き込み後た
だちにそれを読み出すことができ、例えば書き込
みのモニターを行いつつその書き込みを行い得る
など実用に供して大きな利益を有する。 In addition, by making it possible to write with such low power, general users can write the information, and the writing light and reading light must be a laser light source with the same wavelength, that is, a low-power semiconductor light source. can be used,
Since there is no need for any special processing such as development processing on the medium after information is recorded, it can be read out immediately after writing, and it is very useful for practical use, for example, it is possible to write while monitoring the writing. have a profit.

【図面の簡単な説明】[Brief explanation of drawings]

第１図及び第２図は本発明による情報記録媒体
の各例の拡大断面図、第３図及び第４図はこれら
各例の反射率の測定曲線図である。 Ｓは基板、１及び２は第１及び第２の層であ
る。 FIGS. 1 and 2 are enlarged sectional views of examples of information recording media according to the present invention, and FIGS. 3 and 4 are measurement curves of the reflectance of each of these examples. S is a substrate, and 1 and 2 are first and second layers.

Claims (1)

【特許請求の範囲】[Claims] １ 基板上に第１及び第２の層が積層して設けら
れ、上記第１の層は書き込み光に対して光吸収性
を有する材料よりなり、上記第２の層は主として
上記第１の層の発熱により光学的特性が変化する
材料より構成されて書き込み光照射部と非光照射
部の上記光学的特性が10％以上変化する非形状変
化による情報記録を行う情報記録媒体。1 A first layer and a second layer are provided in a laminated manner on a substrate, the first layer is made of a material that absorbs writing light, and the second layer is mainly made of a material that absorbs writing light. An information recording medium that is made of a material whose optical properties change due to heat generation, and records information by non-shape change in which the optical properties of the writing light irradiated part and the non-light irradiated part change by 10% or more.
JP56045174A 1981-03-27 1981-03-27 Information recording medium Granted JPS57159692A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP56045174A JPS57159692A (en) 1981-03-27 1981-03-27 Information recording medium
US06/361,384 US4460636A (en) 1981-03-27 1982-03-24 Optical information record member
CA000399388A CA1180445A (en) 1981-03-27 1982-03-25 Optical information record member
FR8205197A FR2502825B1 (en) 1981-03-27 1982-03-26 OPTICAL INFORMATION RECORDING ELEMENT
DE19823211273 DE3211273A1 (en) 1981-03-27 1982-03-26 OPTICAL INFORMATION STORAGE MEDIUM
GB8208955A GB2097142B (en) 1981-03-27 1982-03-26 Optical information record members
NL8201298A NL8201298A (en) 1981-03-27 1982-03-29 CARRIER FOR OPTICAL REGISTRATION OF INFORMATION.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045174A JPS57159692A (en) 1981-03-27 1981-03-27 Information recording medium

Publications (2)

Publication Number Publication Date
JPS57159692A JPS57159692A (en) 1982-10-01
JPH0114039B2 true JPH0114039B2 (en) 1989-03-09

Family

ID=12711897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56045174A Granted JPS57159692A (en) 1981-03-27 1981-03-27 Information recording medium

Country Status (1)

Country Link
JP (1) JPS57159692A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6099697A (en) * 1983-11-07 1985-06-03 Ricoh Co Ltd Optical recording medium
JPH061559B2 (en) * 1984-11-02 1994-01-05 株式会社日立製作所 Information recording medium
EP0613128A1 (en) * 1993-02-18 1994-08-31 Koninklijke Philips Electronics N.V. Optical information carrier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331108A (en) * 1976-09-03 1978-03-24 Hitachi Ltd Information recording member
JPS5346019A (en) * 1976-10-08 1978-04-25 Canon Inc Recoading medium
JPS5483430A (en) * 1977-12-15 1979-07-03 Canon Inc Heat mode recording method and recording medium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331108A (en) * 1976-09-03 1978-03-24 Hitachi Ltd Information recording member
JPS5346019A (en) * 1976-10-08 1978-04-25 Canon Inc Recoading medium
JPS5483430A (en) * 1977-12-15 1979-07-03 Canon Inc Heat mode recording method and recording medium

Also Published As

Publication number Publication date
JPS57159692A (en) 1982-10-01

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