USRE40100E1 - Fabrication of B/C/N/O/Si doped sputtering targets - Google Patents
Fabrication of B/C/N/O/Si doped sputtering targets Download PDFInfo
- Publication number
- USRE40100E1 USRE40100E1 US10/979,047 US97904704A USRE40100E US RE40100 E1 USRE40100 E1 US RE40100E1 US 97904704 A US97904704 A US 97904704A US RE40100 E USRE40100 E US RE40100E
- Authority
- US
- United States
- Prior art keywords
- sputter target
- doped
- oxygen
- powders
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/007—Alloys based on nickel or cobalt with a light metal (alkali metal Li, Na, K, Rb, Cs; earth alkali metal Be, Mg, Ca, Sr, Ba, Al Ga, Ge, Ti) or B, Si, Zr, Hf, Sc, Y, lanthanides, actinides, as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/06—Alloys based on chromium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/02—Ferrous alloys, e.g. steel alloys containing silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/06—Ferrous alloys, e.g. steel alloys containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Definitions
- the invention is directed to a method of fabricating sputtering targets doped with non-metal additions including boron, carbon, nitrogen, oxygen and silicon by using atomized or crushed alloy powder or ultra fine boride, carbide, nitride, oxide and silicide powder and hot isostatic pressing.
- a typical sputtering system includes a plasma source for generating an electron or ion beam, a target that comprises a material to be atomized and a substrate onto which the sputtered material is deposited.
- the process involves bombarding the target material with an electron or ion beam at an angle that causes the target material to be sputtered or eroded.
- the sputtered target material is deposited as a thin film or layer on the substrate.
- the target materials for sputtering process range from pure metals to ever more complicated alloys.
- the use of complex 3 to 6 element alloys is common in the sputtering industry. Alloying additions such as boron, carbon, nitrogen, oxygen, silicon and so on are frequently added to Cr-, Co-, Fe-based alloys and other intermetallic alloys to modify characteristics such as deposited film grain-size, surface energy and magnetic properties.
- the presence of non-metal additions like boron, carbon, nitrogen, oxygen and silicon to target materials is either in the form of pure elements, e.g. boron and carbon, or in the form of compounds like nitride and oxide.
- the pure element phases such as boron and carbon and the compound phases like boride, carbide, nitride, oxide, and silicide, however cause spitting problems during sputtering.
- the present invention provides a solution to this problem.
- the present invention relates to a novel method of fabricating sputtering targets that are doped with non-metals such as boron, carbon, nitrogen, oxygen and silicon or mixtures thereof or compounds of non-metals.
- the process comprises preparation of a pre-alloyed powder or selection of ultra fine compound powder of less than 10 microns, preferably less than 5 microns and most preferably less than 2 microns. It has been discovered that spitting will not occur when the above phases are in form of ultra fine particles of less than 10 microns in size.
- the powder blend is canned, followed by a hot isostatic press (HIP) consolidation. Powder processing as above is employed to make the target materials because of unique advantages over the prior art's melting process, both technically and economically.
- FIG. 1 shows the process flow chart of the invention described herein.
- the alloy powders of the present invention include alloys and intermetallic alloys composed of 2 to 6 elements, including but not limited to Cr-, Co-, Ru-, Ni-, or Fe-based alloys.
- the alloy powders contain Cr, Co, Ru, Ni, or Fe, optionally alloyed with each other, or with Cr, Al, Pt, Ta, Zr, Mo, Ti, V or W, and include at least one non-metallic addition selected from B, C, N, O or Si.
- FIG. 1 shows the process flow for making the targets.
- the first step is the preparation of raw material powders like atomized alloy powders of Ni—Al—B, Fe—B, Fe—C, Fe—Si and so on or the selection of commercially available ultra fine compound powders such as Al 2 O 3 , AlN, MoB and Cr 2 O 3 of 10 microns or less.
- Atomized powders have very fine microstructure because of extremely quick cooling and solidification, therefore it is the first choice as raw materials. In some cases powders of fine microstructures can also be made by melting and mechanically crushing ingots much more economically than by atomization, especially for small quantities of powder.
- ultra fine compound powders like Al 2 O 3 , AlN, MoB, Cr 2 O 3 , B 4 C and so on are also commercially available, and therefore save both time and money for new product development. Blending of various powders together is preferable because segregation occurs quite often, especially when powders of differing particle size and gravity are combined. Special blending and homogenizing methods include ball milling, v-blending, tubular blending, and attritor milling. Therefore, it is preferred that the alloy powders and/or mixture be substantially homogeneous for best results.
- the powders are canned in preparation for consolidation.
- a container is filled with the powder, evacuated under heat to ensure the removal of any moisture or trapped gasses present, and then sealed.
- the geometry of the container is not limited in any manner, the container can possess a near-net shape geometry with respect to the final material configuration.
- HIP Hot-Isostatic-Pressing
- a HIP unit is typically a cylindrical pressure vessel large enough to house one or more containers.
- the inner walls of the vessel can be lined with resistance heating elements, and the pressure can be controlled by the introduction of inert gas within the container.
- HIP parameters including temperature, pressure and hold time will be minimized to prevent the growth of compound phases and grain size, as well as to save energy and to protect the environment.
- Pressures of about 5 to about 60 ksi (preferably 10-20 ksi) at temperatures between about 500° C. to about 1500° C. (preferably 600-900° C.) are typically employed to achieve appropriate densities.
- total hold times during isostatic pressing typically vary from about 0.5 to about 12 hours. It is noteworthy that other powder consolidation techniques such as hot pressing and cold pressing can also be employed independently or in conjunction with HIP processing.
- the solid material form (billet) is removed from the encapsulation can, and a slice of the billet can then be sent to be tested as to various properties of the billet.
- the billet can be subjected to optional thermo-mechanical processing to further manipulate the microstructural and macro-magnetic properties of the target.
- the final shape and size of the sputter targets can be formed, for example, by processes such as wire EDM, saw, waterjet, lathe, grinder, mill, etc. In these steps, the target can be cleaned and subjected to a final inspection.
- the above alloy is made with the following powder blends, (1) Cr, Mo and ultra fine MoB compound powder, and (2) Cr, Mo and pre-alloyed Cr-3.1wt % B powder that is made with a vacuum induction melter at 1730° C. and mechanically crushing cast ingots into powder at room temperature. Special attention must be paid to mixing all powders together when ultra fine compound powder like MoB is used, otherwise segregation may occur. Herewith an attritor mill or a ball mill must be used for blending from 2 to 24 hours.
- the HIP parameters for this kind of alloy include the temperature ranging from about 1000-1400° C., at a pressure from about 5-40 ksi and a hold time from about 1-12 hours.
- the cooling rate must be controlled too, otherwise the HIPed billet may crack during cooling down. A cooling rate of 3° C./min and a hold plateau at 800° C. for 6 hours is introduced to cooling phase.
- the first is the combination of Co, Cr, Pt and ultra fine SiO 2 powder and the second is the combination of Co, Cr, Pt, atomized Co—Si pre-alloy and ultra fine Cr 2 O 3 powder.
- the suicides are ultra fine and well dispersed in Co matrix of original gas-atomized Co—Si particles. Special mixing methods using an attritor mill or a ball mill for 2 to 24 hours must be employed here to mix all powders together homogeneously when ultra fine compound powders like SiO 2 and Cr 2 O 3 are used, otherwise segregation may occur.
- the HIP parameters for this kind of alloy include the temperature ranging from about 600-1400° C., at a pressure from about 5-40 ksi and a hold time from about 1-12 hours.
- Regular Cr, Mo and partly oxidized Cr powder of oxygen level 15000 ppm are used to make the targets.
- the Cr powder of high oxygen is produced by oxidizing Cr flakes at high temperature and then subjected to mechanical crushing. In this case, only a part of the surface area of Cr powder is covered with oxides. Special attention must be paid to Cr powder of high oxygen level and mixing all powders together in this case, otherwise segregation may occur.
- an attritor mill or a ball mill may be used for blending from 2 to 24 hours.
- the HIP parameters for this kind of alloy include the temperature ranging from about 800-1400° C., at a pressure from about 5-40 ksi and a hold time from about 1-12 hours.
- the cooling rate must be controlled too, otherwise the HIPed billet may crack during cooling down. A cooling rate of 3° C./min and a hold plateau at 800° C. for 6 hours is introduced to cooling phase.
- Gas-atomized NiAl intermetallic powder and ultra fine Al 2 O 3 and AlN powder of less than 5 microns in diameter were taken for making NiAl sputtering targets doped with oxygen or nitrogen.
- gas-atomized NiAl powder boron-doped gas-atomized NiAl powder was also taken for making NiAl sputtering targets doped with boron and borides are ultra fine and well dispersed in the matrix.
- Conventional gas atomization methods are used to manufacture the powders. Special attention must be paid to mixing all powders together when ultra fine compound powders like Al 2 O 3 and AlN are used, otherwise segregation may occur.
- an attritor mill or a ball mill may be used for blending from 2 to 24 hours.
- the HIP parameters for this kind of alloy include the temperature ranging from about 900-1400° C., at a pressure from about 5-40 ksi, and a hold time from about 1-12 hours.
- the cooling rate must be controlled too, otherwise the HIPed billet may crack during cooling down.
- a power-off furnace cooling and a hold plateau at 700° C. for 4 hours is introduced to cooling phase.
Abstract
The present invention relates to a method of manufacturing sputtering targets doped with non-metal components including boron, carbon, nitrogen, oxygen and silicon. A powder process is utilized whereby alloyed powders, which contain non-metal elements of B/C/N/O/Si and non-metal containing phases of less than ten microns in microstructure, are blended, canned and subjected to hot isostatic press consolidation. The sputtering targets of the present invention avoid spitting problems during sputtering of the target material on a substrate.
Description
The invention is directed to a method of fabricating sputtering targets doped with non-metal additions including boron, carbon, nitrogen, oxygen and silicon by using atomized or crushed alloy powder or ultra fine boride, carbide, nitride, oxide and silicide powder and hot isostatic pressing.
Cathodic sputtering processes are widely used for the deposition of thin films of material onto desired substrates. A typical sputtering system includes a plasma source for generating an electron or ion beam, a target that comprises a material to be atomized and a substrate onto which the sputtered material is deposited. The process involves bombarding the target material with an electron or ion beam at an angle that causes the target material to be sputtered or eroded. The sputtered target material is deposited as a thin film or layer on the substrate.
The target materials for sputtering process range from pure metals to ever more complicated alloys. The use of complex 3 to 6 element alloys is common in the sputtering industry. Alloying additions such as boron, carbon, nitrogen, oxygen, silicon and so on are frequently added to Cr-, Co-, Fe-based alloys and other intermetallic alloys to modify characteristics such as deposited film grain-size, surface energy and magnetic properties.
The presence of non-metal additions like boron, carbon, nitrogen, oxygen and silicon to target materials is either in the form of pure elements, e.g. boron and carbon, or in the form of compounds like nitride and oxide. The pure element phases such as boron and carbon and the compound phases like boride, carbide, nitride, oxide, and silicide, however cause spitting problems during sputtering. The present invention provides a solution to this problem.
The present invention relates to a novel method of fabricating sputtering targets that are doped with non-metals such as boron, carbon, nitrogen, oxygen and silicon or mixtures thereof or compounds of non-metals. The process comprises preparation of a pre-alloyed powder or selection of ultra fine compound powder of less than 10 microns, preferably less than 5 microns and most preferably less than 2 microns. It has been discovered that spitting will not occur when the above phases are in form of ultra fine particles of less than 10 microns in size. After the ultra fine powders are blended together, the powder blend is canned, followed by a hot isostatic press (HIP) consolidation. Powder processing as above is employed to make the target materials because of unique advantages over the prior art's melting process, both technically and economically. These and other objectives of this invention will become apparent from the following detailed description.
Reference is now made to the accompanying drawing wherein:
The alloy powders of the present invention include alloys and intermetallic alloys composed of 2 to 6 elements, including but not limited to Cr-, Co-, Ru-, Ni-, or Fe-based alloys. The alloy powders contain Cr, Co, Ru, Ni, or Fe, optionally alloyed with each other, or with Cr, Al, Pt, Ta, Zr, Mo, Ti, V or W, and include at least one non-metallic addition selected from B, C, N, O or Si.
Proper canning techniques are needed to avoid segregation during canning. The powders are canned in preparation for consolidation. In canning for example, a container is filled with the powder, evacuated under heat to ensure the removal of any moisture or trapped gasses present, and then sealed. Although the geometry of the container is not limited in any manner, the container can possess a near-net shape geometry with respect to the final material configuration.
The encapsulate material from the canning step is then consolidated via Hot-Isostatic-Pressing (HIP), a procedure known in the art. A HIP unit is typically a cylindrical pressure vessel large enough to house one or more containers. The inner walls of the vessel can be lined with resistance heating elements, and the pressure can be controlled by the introduction of inert gas within the container. HIP parameters including temperature, pressure and hold time will be minimized to prevent the growth of compound phases and grain size, as well as to save energy and to protect the environment. Pressures of about 5 to about 60 ksi (preferably 10-20 ksi) at temperatures between about 500° C. to about 1500° C. (preferably 600-900° C.) are typically employed to achieve appropriate densities. Depending upon the complexity of the cycle, total hold times during isostatic pressing typically vary from about 0.5 to about 12 hours. It is noteworthy that other powder consolidation techniques such as hot pressing and cold pressing can also be employed independently or in conjunction with HIP processing.
After consolidation, the solid material form (billet) is removed from the encapsulation can, and a slice of the billet can then be sent to be tested as to various properties of the billet. If desired, the billet can be subjected to optional thermo-mechanical processing to further manipulate the microstructural and macro-magnetic properties of the target. Also, the final shape and size of the sputter targets can be formed, for example, by processes such as wire EDM, saw, waterjet, lathe, grinder, mill, etc. In these steps, the target can be cleaned and subjected to a final inspection.
TABLE 1 |
alloys manufactured using the method described herein. |
Materials | Typical Chemistry |
Co—Cr—Pt—B | Co61 at %-Cr15 at %-Pt12 at %-B12 at % |
Co—Cr—Pt—O—Si | Co56 at %-Cr18 at %-Pt16 at %-O3.33 |
at %-Si1.67 at % | |
Co—Pt—B—C | Co60 at %-Pt20 at %-B16 at %-C4 at % |
Co—Ta—N | Co50 at %-Ta50 at % doped with nitrogen |
of 5000 ppm | |
Co—Ta—Zr—O—Si | Co85 at %-Ta5 at %-Zr5 at %-O3.33 |
at %-Si-1.67 at % | |
Co—Ti—Pt—B | Co62 at %-Ti6 at %-Pt12 at %-B20 at % |
Cr—B | Cr97 at %-B3 at % |
Cr—Mo—B | Cr80 at %-Mo15 at %-B5 at % |
Cr—Mo—O | Cr80 at %-Mo20 at % doped with oxygen of |
6000 ppm | |
Cr—O | Cr doped with oxygen of 5000 ppm |
Cr—Ti—B | Cr80 at %-Ti16 at %-B4 at % |
Cr—V—O | Cr80 at %-V20 at % doped with oxygen of |
4000 ppm | |
Cr—V—Zr—O | Cr79 at %-V20 at %-Zr1 at % doped with |
oxygen of 4000 ppm | |
Cr—W—O | Cr90 at %-W10 at % doped with oxygen of |
6000 ppm | |
Cr—Zr—O | Cr99 at %-Zr1 at % doped with oxygen of |
4000 ppm | |
Fe—Co—B | Fe56 at %-Co31 at %-B11 at % |
Fe—Si—Al | Fe73 at %-Si17 at %-Al10 at % (Sendust) |
Fe—Ta—C | Fe80 at %-Ta8 at %-C12 at % |
Ni—Al—B | Ni50 at %-Al50 at % doped with boron of |
2500 ppm | |
Ni—Al—N | Ni48 at %-Al48 at % doped with nitrogen |
of 4 at % | |
Ni—Al—O | Ni50 at %-Al50 at % doped with oxygen of |
5000 ppm | |
Ru—Al—O | Ru50 at %-Al50 at % doped with oxygen of |
5000 ppm | |
Ru—Al—N | Ru50 at %-Al50 at % doped with nitrogen |
of 4000 ppm | |
The following examples demonstrate the present invention further, but should not be construed as a limitation of the present invention. The processes for all materials are similar with each other as shown in FIG. 1 , and the main differences are various combinations of raw materials (powders).
The above alloy is made with the following powder blends, (1) Cr, Mo and ultra fine MoB compound powder, and (2) Cr, Mo and pre-alloyed Cr-3.1wt % B powder that is made with a vacuum induction melter at 1730° C. and mechanically crushing cast ingots into powder at room temperature. Special attention must be paid to mixing all powders together when ultra fine compound powder like MoB is used, otherwise segregation may occur. Herewith an attritor mill or a ball mill must be used for blending from 2 to 24 hours. The HIP parameters for this kind of alloy include the temperature ranging from about 1000-1400° C., at a pressure from about 5-40 ksi and a hold time from about 1-12 hours. The cooling rate must be controlled too, otherwise the HIPed billet may crack during cooling down. A cooling rate of 3° C./min and a hold plateau at 800° C. for 6 hours is introduced to cooling phase.
Two different combinations of starting powders are employed herein. The first is the combination of Co, Cr, Pt and ultra fine SiO2 powder and the second is the combination of Co, Cr, Pt, atomized Co—Si pre-alloy and ultra fine Cr2O3 powder. The suicides are ultra fine and well dispersed in Co matrix of original gas-atomized Co—Si particles. Special mixing methods using an attritor mill or a ball mill for 2 to 24 hours must be employed here to mix all powders together homogeneously when ultra fine compound powders like SiO2 and Cr2O3 are used, otherwise segregation may occur. The HIP parameters for this kind of alloy include the temperature ranging from about 600-1400° C., at a pressure from about 5-40 ksi and a hold time from about 1-12 hours.
Regular Cr, Mo and partly oxidized Cr powder of oxygen level 15000 ppm are used to make the targets. The Cr powder of high oxygen is produced by oxidizing Cr flakes at high temperature and then subjected to mechanical crushing. In this case, only a part of the surface area of Cr powder is covered with oxides. Special attention must be paid to Cr powder of high oxygen level and mixing all powders together in this case, otherwise segregation may occur. Herewith an attritor mill or a ball mill may be used for blending from 2 to 24 hours. The HIP parameters for this kind of alloy include the temperature ranging from about 800-1400° C., at a pressure from about 5-40 ksi and a hold time from about 1-12 hours. The cooling rate must be controlled too, otherwise the HIPed billet may crack during cooling down. A cooling rate of 3° C./min and a hold plateau at 800° C. for 6 hours is introduced to cooling phase.
Gas-atomized NiAl intermetallic powder and ultra fine Al2O3 and AlN powder of less than 5 microns in diameter were taken for making NiAl sputtering targets doped with oxygen or nitrogen. Besides gas-atomized NiAl powder, boron-doped gas-atomized NiAl powder was also taken for making NiAl sputtering targets doped with boron and borides are ultra fine and well dispersed in the matrix. Conventional gas atomization methods are used to manufacture the powders. Special attention must be paid to mixing all powders together when ultra fine compound powders like Al2O3 and AlN are used, otherwise segregation may occur. Herewith an attritor mill or a ball mill may be used for blending from 2 to 24 hours. The HIP parameters for this kind of alloy include the temperature ranging from about 900-1400° C., at a pressure from about 5-40 ksi, and a hold time from about 1-12 hours. The cooling rate must be controlled too, otherwise the HIPed billet may crack during cooling down. A power-off furnace cooling and a hold plateau at 700° C. for 4 hours is introduced to cooling phase.
While this invention has been described with reference to several preferred embodiments, it is contemplated that various alterations and modifications thereof will become apparent to those skilled in the art upon a reading of the detailed description contained herein. It is therefore intended that the following claims are interpreted as including all such alterations and modifications as fall within the true spirit and scope of this invention.
Claims (45)
1. A method of fabricating sputter targets doped with containing a non-metallic addition, the method comprising the steps of:
(a) preparing or selecting raw material elemental powders, wherein the powders are selected from the group consisting of Cr-, Co-, Ru-, Ni- and Fe-based or alloys which are doped with contain at least one non-metal selected from the group consisting of boron, carbon, oxygen and nitrogen, wherein the powders have microstructures of less than about 10 microns;
(b) canning;
(c) hot isostatic pressing; and
(d) machining to form a sputter target.
2. The method according to claim 1 , wherein the elemental powders or alloys have microstructures that are substantially homogeneous.
3. The method according to claim 1 , wherein the powders have microstructures less than 5 microns.
4. The method according to claim 1 , wherein the powders have microstructures less than 2 microns.
5. The method according to claim 1 , wherein the hot isostatic pressing is conducted at a temperature between 500° C. to about 1500° C., a pressure between 5 to about 60 ksi and for a time between 0.5 to 12 hours.
6. The method according to claim 1 , wherein the sputter target contains Fe—Co doped with boron.
7. The method according to claim 6 , wherein the sputter target contains Fe56at %, Co31at %, and B11at %.
8. The method according to claim 1 , wherein the sputter target material contains RuAl doped with oxygen or nitrogen.
9. The method according to claim 8 , wherein the sputter target contains Ru50at %-Al50at %, doped with oxygen of 5000 ppm.
10. The method according to claim 8 , wherein the sputter target contains Ru50at %-Al50at %, doped with nitrogen of 4000 ppm.
11. The method according to claim 1 , wherein the sputter target material contains NiAl doped with oxygen, nitrogen or boron.
12. The method according to claim 11 , wherein the sputter target material contains Ni50at %-Al50at % doped with boron of 2500 ppm.
13. The method according to claim 11 , wherein the sputter target material contains Ni50at %-Al50at % doped with N4at %.
14. The method according to claim 11 , wherein the sputter target material contains Ni50at %-Al50at % doped with oxygen of 5000 ppm.
15. The method according to claim 1 , wherein the sputter target material contains Cr—Mo doped with boron or oxygen.
16. The method according to claim 15 , wherein the sputter target material contains Cr80at %-Mo15at % doped with B5at %.
17. The method according to claim 15 , wherein the sputter target material contains Cr80at %-Mo20at % doped with oxygen of 6000 ppm.
18. The method according to claim 1 , wherein the sputter target material contains Cr—Ti doped with boron or oxygen.
19. The method according to claim 18 , wherein the sputter target material contains Cr80at %-Ti16at % doped with B4at %.
20. The method according to claim 1 , wherein the sputter target material contains Co—Cr—Pt doped with boron, silicon, carbon, oxygen or mixtures thereof.
21. The method according to claim 20 , wherein the sputter target material contains Co61at %-Cr15at %-Pt12at % doped with B12at %.
22. The method according to claim 20 , wherein the sputter target material contains Co56at %-Cr18at %-Pt16at % doped with O3.33at %-Si1.67at %.
23. The method according to claim 1 , wherein the raw material powders are selected from the group consisting of Cr-, Co-, Ru-, Ni- and Fe-based alloys, are optionally alloyed with each other, or with Cr, Al, Pt, Ta, Zr, Mo, Ti, V, Si or W, and further contains at least one non-metallic addition selected from the group consisting of B, C, N, O and Si .
24. A sputter target containing a non-metallic addition, the sputter target being formed by (a) preparing or selecting raw material powders, wherein the powders are selected from the group consisting of Cr-, Co-, Ru-, Ni- and Fe-based alloys which contain at least one non-metal selected from the group consisting of boron, carbon, oxygen and nitrogen, wherein the powders have microstructures of less than about 10 microns, (b) canning the raw material powders; (c) hot isostatic pressing the canned raw material powders to form a billet; and (d) machining the billet to form the sputter target.
25. The sputter target according to claim 24 , wherein the powders have microstructures that are substantially homogeneous.
26. The sputter target according to claim 24 , wherein the powders have microstructures less than 5 microns.
27. The sputter target according to claim 24 , wherein the powders have microstructures less than 2 microns.
28. The sputter target according to claim 24 , wherein the hot isostatic pressing is conducted at a temperature between 500° C. to about 1500° C., a pressure between 5 to about 60 ksi and for a time between 0.5 to 12 hours.
29. The sputter target according to claim 24 , wherein the sputter target contains Fe—Co doped with boron.
30. The sputter target according to claim 29 , wherein the sputter target contains Fe56at%, Co31at%, and B11at%.
31. The sputter target according to claim 24 , wherein the sputter target contains RuAl doped with oxygen or nitrogen.
32. The sputter target according to claim 31 , wherein the sputter target contains Ru 50at%-Al 50at%, doped with oxygen of 5000 ppm.
33. The sputter target according to claim 31 , wherein the sputter target contains Ru 50at%-Al 50at%, doped with nitrogen of 4000 ppm.
34. The sputter target according to claim 24 , wherein the sputter target contains NiAl doped with oxygen, nitrogen or boron.
35. The sputter target according to claim 34 , wherein the sputter target contains Ni50at%-Al50at% doped with boron of 2500 ppm.
36. The sputter target according to claim 34 , wherein the sputter target contains Ni50at%-Al50at% doped with N4at%.
37. The sputter target according to claim 34 , wherein the sputter target contains Ni50at%-Al50at% doped with oxygen of 5000 ppm.
38. The sputter target according to claim 24 , wherein the sputter target contains Cr—Mo doped with boron or oxygen.
39. The sputter target according to claim 38 , wherein the sputter target contains Cr80at%-Mo15at% doped with B5at%.
40. The sputter target according to claim 38 , wherein the sputter target contains Cr80at%-Mo20at% doped with oxygen of 6000 ppm.
41. The sputter target according to claim 24 , wherein the sputter target contains Cr—Ti doped with boron or oxygen.
42. The sputter target according to claim 41 , wherein the sputter target contains Cr80at%-Ti16at% doped with B4at%.
43. The sputter target according to claim 24 , wherein the sputter target contains Co—Cr—Pt doped with boron, carbon or mixtures thereof.
44. The sputter target according to claim 43 , wherein the sputter target contains Co61at%-Cr15at%-Pt12at% doped with B12at%.
45. The sputter target according to claim 24 , wherein the group consisting of Cr-, Co-, Ru-, Ni- and Fe-based alloys are optionally alloyed with each other, or with Cr, Al, Pt, Ta, Zr, Mo, Ti, V, Si or W.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/979,047 USRE40100E1 (en) | 2002-07-23 | 2004-11-02 | Fabrication of B/C/N/O/Si doped sputtering targets |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/200,590 US6759005B2 (en) | 2002-07-23 | 2002-07-23 | Fabrication of B/C/N/O/Si doped sputtering targets |
US10/979,047 USRE40100E1 (en) | 2002-07-23 | 2004-11-02 | Fabrication of B/C/N/O/Si doped sputtering targets |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/200,590 Reissue US6759005B2 (en) | 2002-07-23 | 2002-07-23 | Fabrication of B/C/N/O/Si doped sputtering targets |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE40100E1 true USRE40100E1 (en) | 2008-02-26 |
Family
ID=30769551
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/200,590 Ceased US6759005B2 (en) | 2002-07-23 | 2002-07-23 | Fabrication of B/C/N/O/Si doped sputtering targets |
US10/739,401 Expired - Fee Related US7311874B2 (en) | 2002-07-23 | 2003-12-19 | Sputter target and method for fabricating sputter target including a plurality of materials |
US10/979,047 Expired - Lifetime USRE40100E1 (en) | 2002-07-23 | 2004-11-02 | Fabrication of B/C/N/O/Si doped sputtering targets |
US11/655,163 Abandoned US20070134124A1 (en) | 2002-07-23 | 2007-01-19 | Sputter target and method for fabricating sputter target including a plurality of materials |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/200,590 Ceased US6759005B2 (en) | 2002-07-23 | 2002-07-23 | Fabrication of B/C/N/O/Si doped sputtering targets |
US10/739,401 Expired - Fee Related US7311874B2 (en) | 2002-07-23 | 2003-12-19 | Sputter target and method for fabricating sputter target including a plurality of materials |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/655,163 Abandoned US20070134124A1 (en) | 2002-07-23 | 2007-01-19 | Sputter target and method for fabricating sputter target including a plurality of materials |
Country Status (9)
Country | Link |
---|---|
US (4) | US6759005B2 (en) |
EP (1) | EP1523584A1 (en) |
JP (1) | JP2005533182A (en) |
KR (1) | KR100668166B1 (en) |
CN (1) | CN100351424C (en) |
AU (1) | AU2003281638A1 (en) |
MY (1) | MY134322A (en) |
TW (1) | TWI299364B (en) |
WO (1) | WO2004009865A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110003177A1 (en) * | 2009-07-06 | 2011-01-06 | Solar Applied Materials Technology Corp. | Method for producing sputtering target containing boron, thin film and magnetic recording media |
US8394243B1 (en) | 2008-07-24 | 2013-03-12 | Wd Media, Inc. | Sputtered cobalt oxide for perpendicular magnetic recording medium with low media noise |
US8488276B1 (en) | 2008-09-30 | 2013-07-16 | WD Media, LLC | Perpendicular magnetic recording medium with grain isolation magnetic anistropy layer |
US8993133B1 (en) | 2010-12-23 | 2015-03-31 | WD Media, LLC | Intermediate layer for perpendicular magnetic recording medium with high permeability grain boundaries |
US9685184B1 (en) | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3995082B2 (en) * | 2001-07-18 | 2007-10-24 | 日鉱金属株式会社 | Hafnium silicide target for gate oxide film formation and method of manufacturing the same |
US20070189916A1 (en) * | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
EP1528120B1 (en) * | 2002-08-06 | 2011-04-13 | Nippon Mining & Metals Co., Ltd. | Hafnium silicide target and method for preparation thereof |
US7141208B2 (en) * | 2003-04-30 | 2006-11-28 | Hitachi Metals, Ltd. | Fe-Co-B alloy target and its production method, and soft magnetic film produced by using such target, and magnetic recording medium and TMR device |
US20050249981A1 (en) * | 2004-05-10 | 2005-11-10 | Heraeus, Inc. | Grain structure for magnetic recording media |
US9004150B2 (en) * | 2005-03-16 | 2015-04-14 | Centre de Recherches Metallurgiques ASBL—Centrum Voor Research in de Metallurgie VZW | Method for continuous casting of a metal with improved mechanical strength and product obtained by said method |
CN100439559C (en) * | 2005-04-08 | 2008-12-03 | 光洋应用材料科技股份有限公司 | Ceramic sputtering targets of tantalum-base compound and its use method and preparation method |
US7494617B2 (en) * | 2005-04-18 | 2009-02-24 | Heraeus Inc. | Enhanced formulation of cobalt alloy matrix compositions |
DE102005021927A1 (en) * | 2005-05-12 | 2006-11-16 | Fette Gmbh | Alloy body as a target for the PVD process, process for producing the alloyed body and PVD process with the alloyed body |
US20070017803A1 (en) * | 2005-07-22 | 2007-01-25 | Heraeus, Inc. | Enhanced sputter target manufacturing method |
DE102005049328B4 (en) * | 2005-10-12 | 2007-07-26 | W.C. Heraeus Gmbh | Material mixture, sputtering target, process for its preparation and use of the material mixture |
DE102005050424B4 (en) * | 2005-10-19 | 2009-10-22 | W.C. Heraeus Gmbh | Sputtering target made of multi-component alloys |
US20070116592A1 (en) * | 2005-11-22 | 2007-05-24 | Paul Tylus | Fabrication of Ruthenium and Ruthenium Alloy Sputtering Targets with Low Oxygen Content |
JP2008078496A (en) * | 2006-09-22 | 2008-04-03 | Mitsui Mining & Smelting Co Ltd | OXIDE CONTAINING Co-BASED ALLOY MAGNETIC FILM, OXIDE CONTAINING Co-BASED ALLOY TARGET, AND MANUFACTURING METHOD THEREOF |
WO2008044626A1 (en) * | 2006-10-13 | 2008-04-17 | Nippon Mining & Metals Co., Ltd. | Sb-Te BASE ALLOY SINTER SPUTTERING TARGET |
KR100856758B1 (en) * | 2006-11-30 | 2008-09-05 | 희성금속 주식회사 | Manufacturing method of the iridium and ruthenium sputtering target having a fine grain size |
US7927525B2 (en) * | 2007-08-24 | 2011-04-19 | Lizotte Todd E | Vacuum isostatic micro molding of micro/nano structures and micro transfer metal films into PTFE and PTFE compounds |
US8197885B2 (en) * | 2008-01-11 | 2012-06-12 | Climax Engineered Materials, Llc | Methods for producing sodium/molybdenum power compacts |
JP2009215617A (en) * | 2008-03-11 | 2009-09-24 | Mitsui Mining & Smelting Co Ltd | Sputtering target material containing cobalt, chromium, and platinum matrix phase and oxide phase and method for producing the same |
TWI396759B (en) * | 2008-06-18 | 2013-05-21 | China Steel Corp | A method for producing a metal - based ceramic composite target containing noble metal |
CN102333905B (en) | 2009-03-27 | 2013-09-04 | 吉坤日矿日石金属株式会社 | Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type |
JP2011021254A (en) * | 2009-07-16 | 2011-02-03 | Solar Applied Materials Technology Corp | Method for producing boron-containing sputtering target, thin film and magnetic recording medium |
CN102482764B (en) | 2009-08-06 | 2014-06-18 | 吉坤日矿日石金属株式会社 | Inorganic particle-dispersed sputtering target |
MY149640A (en) * | 2009-12-11 | 2013-09-13 | Jx Nippon Mining & Metals Corp | Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film |
DE102010042828A1 (en) * | 2010-10-22 | 2012-04-26 | Walter Ag | Target for arc process |
SG188601A1 (en) * | 2010-12-09 | 2013-04-30 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
MY156201A (en) * | 2010-12-15 | 2016-01-29 | Jx Nippon Mining & Metals Corp | Ferromagnetic sputtering target and method for manufacturing same |
US9683284B2 (en) | 2011-03-30 | 2017-06-20 | Jx Nippon Mining & Metals Corporation | Sputtering target for magnetic recording film |
JP5301751B1 (en) * | 2011-09-26 | 2013-09-25 | Jx日鉱日石金属株式会社 | Fe-Pt-C sputtering target |
SG11201404067PA (en) * | 2012-06-18 | 2014-10-30 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film |
DE102013006633A1 (en) * | 2013-04-18 | 2014-10-23 | Oerlikon Trading Ag, Trübbach | Spark vaporization of metallic, intermetallic and ceramic target materials to produce Al-Cr-N coatings |
CN103320756B (en) * | 2013-06-20 | 2016-03-02 | 安泰科技股份有限公司 | The preparation method of high purity, high-compactness, large-size molybdenum alloy target |
CN103714942B (en) * | 2013-12-27 | 2016-08-17 | 青岛大学 | A kind of automatic biasing heterogeneous body microwave ferromagnetic thin film material and preparation method thereof |
CN104174851B (en) * | 2014-08-12 | 2016-05-18 | 贵研铂业股份有限公司 | A kind of Co-Cr-Pt-SiO2The preparation method of target |
CN104889398A (en) * | 2015-05-15 | 2015-09-09 | 安泰科技股份有限公司 | Anti-abrasion anti-etching alloy rod production method through powder metallurgy process |
JP6660130B2 (en) * | 2015-09-18 | 2020-03-04 | 山陽特殊製鋼株式会社 | CoFeB alloy target material |
CN105925865A (en) * | 2016-06-07 | 2016-09-07 | 安泰科技股份有限公司 | Boron-containing alloy target material and preparation method thereof |
CN110055495B (en) * | 2019-05-31 | 2020-12-22 | 华南理工大学 | CrFe + (Cr, Fe) N-substituted chromium coating and preparation method thereof |
CN110527957A (en) * | 2019-08-19 | 2019-12-03 | 河北宏靶科技有限公司 | A kind of aluminium chromium-boron alloy target and preparation method thereof |
CN111438355B (en) * | 2020-04-13 | 2022-02-22 | 河北晟华新材料科技有限公司 | Chromium-aluminum-silicon target material and preparation method thereof |
CN113732285B (en) * | 2021-11-05 | 2022-03-01 | 西安赛隆金属材料有限责任公司 | Iron-nickel-cobalt-based powder alloy and method for improving elongation thereof |
Citations (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4609528A (en) * | 1985-10-03 | 1986-09-02 | General Electric Company | Tri-nickel aluminide compositions ductile at hot-short temperatures |
US4612165A (en) * | 1983-12-21 | 1986-09-16 | The United States Of America As Represented By The United States Department Of Energy | Ductile aluminide alloys for high temperature applications |
US4613368A (en) * | 1985-10-03 | 1986-09-23 | General Electric Company | Tri-nickel aluminide compositions alloyed to overcome hot-short phenomena |
US4731116A (en) | 1985-12-23 | 1988-03-15 | Schwarzkopf Development Corporation | Sputter target and process for producing sputter target |
US4820393A (en) * | 1987-05-11 | 1989-04-11 | Tosoh Smd, Inc. | Titanium nitride sputter targets |
US4917722A (en) * | 1988-05-18 | 1990-04-17 | Tosoh Corporation | Single crystals of chromium and method for producing the same |
US5320729A (en) | 1991-07-19 | 1994-06-14 | Hitachi, Ltd. | Sputtering target |
US5415829A (en) | 1992-12-28 | 1995-05-16 | Nikko Kyodo Co., Ltd. | Sputtering target |
US5470527A (en) | 1992-04-21 | 1995-11-28 | Kabushiki Kaisha Toshiba | Ti-W sputtering target and method for manufacturing same |
US5530467A (en) * | 1990-02-01 | 1996-06-25 | Kabushiki Kaisha Toshiba | Sputtering target, film resistor and thermal printer head |
US5561833A (en) * | 1993-03-11 | 1996-10-01 | Japan Metals & Chemicals Co., Ltd. | Method of making high oxygen chromium target |
US5618397A (en) * | 1993-05-07 | 1997-04-08 | Japan Energy Corporation | Silicide targets for sputtering |
US5652877A (en) | 1991-01-18 | 1997-07-29 | Centre National De La Recherche | Aluminum alloys, substrates coated with these alloys and their applications |
US5778302A (en) * | 1995-09-14 | 1998-07-07 | Tosoh Smd, Inc. | Methods of making Cr-Me sputter targets and targets produced thereby |
JPH10183341A (en) | 1998-01-19 | 1998-07-14 | Hitachi Metals Ltd | Tungsten or molybdenum target |
US5863398A (en) | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
KR0184725B1 (en) | 1993-07-27 | 1999-04-01 | 사토 후미오 | High melting point metallic silicide target and method for producing the same, high melting point metallic silicide |
US5896553A (en) | 1996-04-10 | 1999-04-20 | Sony Corporation | Single phase tungsten-titanium sputter targets and method of producing same |
WO1999019102A1 (en) | 1997-10-14 | 1999-04-22 | Tosoh Smd, Inc. | Sputter targets and methods of making same |
US5989673A (en) | 1997-06-30 | 1999-11-23 | Sony Corporation | Caromium-tantalum oxides (Cr-TaOx), sputtering targets and thin film seedlayer/sublayers for thin film magnetic recording media |
WO2001038599A1 (en) | 1999-11-25 | 2001-05-31 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive oxide, and method for preparing sputtering target |
EP1112988A1 (en) | 1999-12-28 | 2001-07-04 | Furuya Metal Co., Ltd. | ZnS-series sintered material and method for producing the same, target using the ZnS-series sintered material, thin film, and optical recording medium using the thin film |
US6261984B1 (en) | 1998-10-08 | 2001-07-17 | Tosoh Corporation | Sputtering target and process for the preparation thereof |
US6264813B1 (en) | 1996-12-04 | 2001-07-24 | Aluminum Pechiney | Cathodic sputtering targets made of aluminum alloy |
US6328927B1 (en) * | 1998-12-24 | 2001-12-11 | Praxair Technology, Inc. | Method of making high-density, high-purity tungsten sputter targets |
US6406600B1 (en) | 1999-03-29 | 2002-06-18 | Hitachi Metals, Ltd. | CoPt-base sputtering target, method of making same, magnetic recording film and Co-Pt-base magnetic recording medium |
US6417105B1 (en) * | 1997-07-11 | 2002-07-09 | Honeywell International Inc. | Sputtering targets comprising aluminides or silicides |
US6589311B1 (en) * | 1999-07-07 | 2003-07-08 | Hitachi Metals Ltd. | Sputtering target, method of making same, and high-melting metal powder material |
US6797137B2 (en) | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4613388A (en) * | 1982-09-17 | 1986-09-23 | Rockwell International Corporation | Superplastic alloys formed by electrodeposition |
JP2837788B2 (en) * | 1993-04-16 | 1998-12-16 | 山陽特殊製鋼株式会社 | Method for producing alloy powder for target for producing magneto-optical recording medium and alloy powder |
US5471527A (en) * | 1993-12-02 | 1995-11-28 | Dsc Communications Corporation | Voice enhancement system and method |
US5736013A (en) * | 1994-04-06 | 1998-04-07 | Komag, Inc. | Method for forming an improved magnetic media including sputtering of selected oxides or nitrides in the magnetic layer, and apparatus for same |
US6174597B1 (en) * | 1996-07-26 | 2001-01-16 | Kabushiki Kaisha Toshiba | Magnetic recording apparatus |
US6216984B1 (en) * | 1999-10-15 | 2001-04-17 | Akbar F. Brinsmade | Gravity habitat module for space vehicle |
JP2001236643A (en) * | 2000-02-23 | 2001-08-31 | Fuji Electric Co Ltd | Sputtering target for manufacturing magnetic recording medium, method of manufacturing magnetic recording medium by using the same, and magnetic recording medium |
-
2002
- 2002-07-23 US US10/200,590 patent/US6759005B2/en not_active Ceased
-
2003
- 2003-07-02 WO PCT/US2003/020725 patent/WO2004009865A1/en active Application Filing
- 2003-07-02 KR KR1020047020873A patent/KR100668166B1/en not_active IP Right Cessation
- 2003-07-02 AU AU2003281638A patent/AU2003281638A1/en not_active Abandoned
- 2003-07-02 CN CNB038137909A patent/CN100351424C/en not_active Expired - Fee Related
- 2003-07-02 EP EP03742365A patent/EP1523584A1/en not_active Withdrawn
- 2003-07-02 JP JP2004523049A patent/JP2005533182A/en active Pending
- 2003-07-10 MY MYPI20032592A patent/MY134322A/en unknown
- 2003-07-17 TW TW092119551A patent/TWI299364B/en not_active IP Right Cessation
- 2003-12-19 US US10/739,401 patent/US7311874B2/en not_active Expired - Fee Related
-
2004
- 2004-11-02 US US10/979,047 patent/USRE40100E1/en not_active Expired - Lifetime
-
2007
- 2007-01-19 US US11/655,163 patent/US20070134124A1/en not_active Abandoned
Patent Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4612165A (en) * | 1983-12-21 | 1986-09-16 | The United States Of America As Represented By The United States Department Of Energy | Ductile aluminide alloys for high temperature applications |
US4612165B1 (en) * | 1983-12-21 | 1991-07-23 | Us Energy | |
US4613368A (en) * | 1985-10-03 | 1986-09-23 | General Electric Company | Tri-nickel aluminide compositions alloyed to overcome hot-short phenomena |
US4609528A (en) * | 1985-10-03 | 1986-09-02 | General Electric Company | Tri-nickel aluminide compositions ductile at hot-short temperatures |
US4731116A (en) | 1985-12-23 | 1988-03-15 | Schwarzkopf Development Corporation | Sputter target and process for producing sputter target |
US4820393A (en) * | 1987-05-11 | 1989-04-11 | Tosoh Smd, Inc. | Titanium nitride sputter targets |
US4917722A (en) * | 1988-05-18 | 1990-04-17 | Tosoh Corporation | Single crystals of chromium and method for producing the same |
US5530467A (en) * | 1990-02-01 | 1996-06-25 | Kabushiki Kaisha Toshiba | Sputtering target, film resistor and thermal printer head |
US5652877A (en) | 1991-01-18 | 1997-07-29 | Centre National De La Recherche | Aluminum alloys, substrates coated with these alloys and their applications |
US5320729A (en) | 1991-07-19 | 1994-06-14 | Hitachi, Ltd. | Sputtering target |
US5470527A (en) | 1992-04-21 | 1995-11-28 | Kabushiki Kaisha Toshiba | Ti-W sputtering target and method for manufacturing same |
US5415829A (en) | 1992-12-28 | 1995-05-16 | Nikko Kyodo Co., Ltd. | Sputtering target |
US5561833A (en) * | 1993-03-11 | 1996-10-01 | Japan Metals & Chemicals Co., Ltd. | Method of making high oxygen chromium target |
US5618397A (en) * | 1993-05-07 | 1997-04-08 | Japan Energy Corporation | Silicide targets for sputtering |
US6309593B1 (en) | 1993-07-27 | 2001-10-30 | Kabushiki Kaisha Toshiba | Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device |
EP1118690A2 (en) | 1993-07-27 | 2001-07-25 | Kabushiki Kaisha Toshiba | Refractory metal silicide target |
KR0184725B1 (en) | 1993-07-27 | 1999-04-01 | 사토 후미오 | High melting point metallic silicide target and method for producing the same, high melting point metallic silicide |
US5778302A (en) * | 1995-09-14 | 1998-07-07 | Tosoh Smd, Inc. | Methods of making Cr-Me sputter targets and targets produced thereby |
US5896553A (en) | 1996-04-10 | 1999-04-20 | Sony Corporation | Single phase tungsten-titanium sputter targets and method of producing same |
US5863398A (en) | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
US6264813B1 (en) | 1996-12-04 | 2001-07-24 | Aluminum Pechiney | Cathodic sputtering targets made of aluminum alloy |
US5989673A (en) | 1997-06-30 | 1999-11-23 | Sony Corporation | Caromium-tantalum oxides (Cr-TaOx), sputtering targets and thin film seedlayer/sublayers for thin film magnetic recording media |
US6417105B1 (en) * | 1997-07-11 | 2002-07-09 | Honeywell International Inc. | Sputtering targets comprising aluminides or silicides |
WO1999019102A1 (en) | 1997-10-14 | 1999-04-22 | Tosoh Smd, Inc. | Sputter targets and methods of making same |
JPH10183341A (en) | 1998-01-19 | 1998-07-14 | Hitachi Metals Ltd | Tungsten or molybdenum target |
US6261984B1 (en) | 1998-10-08 | 2001-07-17 | Tosoh Corporation | Sputtering target and process for the preparation thereof |
US6328927B1 (en) * | 1998-12-24 | 2001-12-11 | Praxair Technology, Inc. | Method of making high-density, high-purity tungsten sputter targets |
US6406600B1 (en) | 1999-03-29 | 2002-06-18 | Hitachi Metals, Ltd. | CoPt-base sputtering target, method of making same, magnetic recording film and Co-Pt-base magnetic recording medium |
US6589311B1 (en) * | 1999-07-07 | 2003-07-08 | Hitachi Metals Ltd. | Sputtering target, method of making same, and high-melting metal powder material |
US6676728B2 (en) * | 1999-07-07 | 2004-01-13 | Hitachi Metals, Ltd. | Sputtering target, method of making same, and high-melting metal powder material |
WO2001038599A1 (en) | 1999-11-25 | 2001-05-31 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive oxide, and method for preparing sputtering target |
EP1233082A1 (en) | 1999-11-25 | 2002-08-21 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive oxide, and method for preparing sputtering target |
EP1112988A1 (en) | 1999-12-28 | 2001-07-04 | Furuya Metal Co., Ltd. | ZnS-series sintered material and method for producing the same, target using the ZnS-series sintered material, thin film, and optical recording medium using the thin film |
US6797137B2 (en) | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8394243B1 (en) | 2008-07-24 | 2013-03-12 | Wd Media, Inc. | Sputtered cobalt oxide for perpendicular magnetic recording medium with low media noise |
US8488276B1 (en) | 2008-09-30 | 2013-07-16 | WD Media, LLC | Perpendicular magnetic recording medium with grain isolation magnetic anistropy layer |
US20110003177A1 (en) * | 2009-07-06 | 2011-01-06 | Solar Applied Materials Technology Corp. | Method for producing sputtering target containing boron, thin film and magnetic recording media |
US8993133B1 (en) | 2010-12-23 | 2015-03-31 | WD Media, LLC | Intermediate layer for perpendicular magnetic recording medium with high permeability grain boundaries |
US9685184B1 (en) | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
Also Published As
Publication number | Publication date |
---|---|
US20070134124A1 (en) | 2007-06-14 |
US20040018110A1 (en) | 2004-01-29 |
TW200422416A (en) | 2004-11-01 |
KR20050019773A (en) | 2005-03-03 |
JP2005533182A (en) | 2005-11-04 |
US6759005B2 (en) | 2004-07-06 |
CN100351424C (en) | 2007-11-28 |
EP1523584A1 (en) | 2005-04-20 |
WO2004009865A1 (en) | 2004-01-29 |
AU2003281638A1 (en) | 2004-02-09 |
TWI299364B (en) | 2008-08-01 |
CN1659306A (en) | 2005-08-24 |
US7311874B2 (en) | 2007-12-25 |
US20040208774A1 (en) | 2004-10-21 |
MY134322A (en) | 2007-12-31 |
KR100668166B1 (en) | 2007-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
USRE40100E1 (en) | Fabrication of B/C/N/O/Si doped sputtering targets | |
US20070189916A1 (en) | Sputtering targets and methods for fabricating sputtering targets having multiple materials | |
US20020106297A1 (en) | Co-base target and method of producing the same | |
EP1548148B1 (en) | Iron silicide sputtering target and method for production thereof | |
US7229588B2 (en) | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal | |
US6042777A (en) | Manufacturing of high density intermetallic sputter targets | |
EP3015566B1 (en) | Magnetic material sputtering target and method for producing same | |
US20040062675A1 (en) | Fabrication of ductile intermetallic sputtering targets | |
EP3124647B1 (en) | Sputtering target comprising al-te-cu-zr alloy, and method for producing same | |
EP3932592A1 (en) | Alloy suitable for sputtering target material | |
JPH11246967A (en) | Target for irmn series alloy film formation, its production and antiferromagnetic film using it | |
JP7412659B2 (en) | Sputtering target members, sputtering target assemblies, and film formation methods | |
JPH06271901A (en) | Ti-al intermetallic compound powder having excellent sinterability and sintered compact thereof | |
WO2023162327A1 (en) | Sputtering target and method for producing same | |
EP3170916B1 (en) | Sputterring target comprising al-te-cu-zr-based alloy and method of manufacturing the same | |
JPH0551732A (en) | Target for sputtering and production thereof | |
JPH04263069A (en) | Sputtering target and its production | |
JPH02250964A (en) | Sendust alloy target and production thereof | |
JPH02170969A (en) | Manufacture of target material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |