USRE36136E - Thermal sensor - Google Patents

Thermal sensor Download PDF

Info

Publication number
USRE36136E
USRE36136E US08/627,598 US62759896A USRE36136E US RE36136 E USRE36136 E US RE36136E US 62759896 A US62759896 A US 62759896A US RE36136 E USRE36136 E US RE36136E
Authority
US
United States
Prior art keywords
layer
dielectric
iaddend
iadd
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08/627,598
Inventor
Robert E. Higashi
James O. Holmen
Robert G. Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25391269&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=USRE36136(E) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Honeywell Inc filed Critical Honeywell Inc
Priority to US08/627,598 priority Critical patent/USRE36136E/en
Application granted granted Critical
Publication of USRE36136E publication Critical patent/USRE36136E/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable

Definitions

  • the field of the invention is in a two-level infrared bolometer array based on a pitless microbridge detector structure with integrated circuitry on a silicon substrate beneath.
  • This invention is directed to a pixel size sensor of an array of sensors for an infrared pitless microbridge construction of high fill factor.
  • the large fill factor (>75%) is made possible by placing the detector microbridge on a second plane above the silicon surface carrying the integrated diode and bus lines.
  • FIG. 1 is an elevation view of the two-level detector.
  • FIG. 2 is a top plan view of the lower level of the two-level detector.
  • FIG. 3 is a plan view of the top plane of the detector.
  • FIG. 3a shows adjoining detectors.
  • FIG. 4 is a schematic representation of a pixel circuit and connections.
  • FIGS. 5 and 6 show perspective and top views of an array of the two level detectors.
  • the elevation and/or cross section view of the two-level pitless microbridge bolometer pixel 10 is shown in FIG. 1.
  • the device 10 has two levels, an elevated microbridge detector level 11 and a lower level 12.
  • the lower level has a flat surfaced semiconductor substrate 13, such as a single crystal silicon substrate.
  • the surface 14 of the silicon substrate 13 has fabricated thereon several components of in integrated circuit 15 including diodes, x and y bus lines, connections, and contact pads at the ends of the x and y bus lines, the fabrication following conventional silicon IC technology.
  • the integrated circuit 15 is coated with a protective layer of silicon nitride 16.
  • a top plan view of the lower level is shown in FIG.
  • the valley strip 17 is the area not covered by the elevated detector.
  • the elevated detector level 11 includes a silicon nitride layer 20, a serpentine metallic resistive layer 21, such as of nickel-iron, often called permalloy, a silicon nitride layer 22 over the layers 20 and 21, and an IR absorber coating 23 over the silicon nitride layer 22.
  • the absorber coating may also be of a nickel-iron alloy.
  • Downwardly extending silicon nitride layers 20' and 22' deposited at the same time during the fabrication make up the four sloping support legs for the elevated detector level. The number of support legs may be greater or less than four.
  • the cavity 26 (approximately 3 microns high) between the two levels is ambient atmosphere.
  • the cavity 26 was originally filled with a previously deposited layer of easily dissolvable glass or other dissolvable material until the layers 20, 20' and 22, 22' were deposited. Subsequently in the process the glass was dissolved out to leave the cavity.
  • the horizontal dimension, as shown, is greatly foreshortened for descriptive purposes. That is, the height of FIG. 1 is greatly exaggerated in the drawing compared to the length in order to show the details of the invention.
  • FIG. 3 is a top plan view of the elevated detector level 11. This drawing is made as though the overlying absorber coating 23 and upper silicon nitride layer 22 are transparent so the tine resistive layer path 21 can be shown.
  • the exact layout of the serpentine pattern 21 is not significant to the invention.
  • the resistive lines and spaces may be about 1.5 micron.
  • Permalloy was selected as the material for the resistive path 21 in one embodiment because of its relatively high resistivity together with a good temperature coefficient of resistance.
  • the . .resistivity.!. .Iadd.resistance .Iaddend. was on the order of 2500 ohms, with a fill factor of about 75%.
  • the ends of the resistive paths 21a and 21b are continued down the slope area 30 to make electrical contact with pads 31 and 32 on the lower level.
  • FIG. 3 also shows nitride window cuts 35, 36 and 37 which are opened through the silicon nitride layers 20 and 22 to provide access to the phos-glass beneath for dissolving it from beneath the detector plane.
  • These nitride cuts may be made by ion milling or other suitable process It may be noted that the ion milled cuts 35, 36, 37 to provide this access are very narrow ( ⁇ 2 microns) and are shared with adjacent pixels on the sides, (see FIG. 3a), thus maximizing the area available to the detector and thus maximizing the resulting fill-factor.
  • the four supporting legs may be as short or as long as necessary to provide adequate support and thermal isolation. With the detector thickness of 3000A or less, the thermal impedance is high over the entire detector film. Consequently, short legs should not contribute excessively to the conductance, FIG. 3a shows that the adjacent identical pixels are in close proximity.
  • FIG. 4 is a schematic representation of a pixel circuit shown in the other figures comprising the sensing element 21 and the connections to it which are clearly labeled on the drawing.
  • FIG. 5 and 6 show a section of the array.
  • FIG. 5 shows in perspective the sensing ridges of abutting sensors in a column. This figure is partially cutaway to show the lower level and the cavity as well.
  • the ridges may be about 40 microns wide, so that the elevated detector pixels 11 are on the order of 50 ⁇ 40 microns.
  • FIG. 6 is a top view block diagram of FIG. 5.
  • a suitable IR lens system is usually used to focus a scene onto the array of pixels.
  • a chopper may be used if desired to interrupt the incoming IR energy in synchronism with the related utilizing video electronics.
  • the focused scene heats each pixel according to the energy of the received scene at each pixel position and changes the resistance of the resistive layer 21 according to the pixel temperature.
  • the upper level 11 is then ready to commence.
  • a layer of phos-glass or other easily soluble material approximately 3 microns thick is deposited and delineated along x-direction strips and the strip slopes 30 and 30' are thoroughly rounded to eliminate slope coverage problems. In the delineation the glass is cut to less than one micron on the strip 17.
  • the remaining glass is cut to open the strip, and the external glass areas including the x-pad and y-pad.
  • the upper plane silicon nitride base layer 20 is then deposited, the nickel-iron resistance layer 21 is deposited, delineated, and connected to the lower . .plan.!. .Iadd.plane .Iaddend.contacts 18 and 19, and covered with silicone nitride passivation layer 22.
  • the trim site 40 (FIG. 3) is cut, x-pads and y-pads are opened, the absorber coating 23 is deposited and delineated, and finally the side slots 35, 36 and 37 are ion milled allowing the phos-glass to be dissolved from beneath the detector plane.

Abstract

A two-level IR detector imaging array of high fill-factor design. The upper microbridge detector level is spaced above and overlie the integrated circuit and bus lines on the substrate surface below.

Description

FIELD OF THE INVENTION
The field of the invention is in a two-level infrared bolometer array based on a pitless microbridge detector structure with integrated circuitry on a silicon substrate beneath.
BACKGROUND AND SUMMARY OF THE INVENTION
This invention is directed to a pixel size sensor of an array of sensors for an infrared pitless microbridge construction of high fill factor. In this invention the large fill factor (>75%) is made possible by placing the detector microbridge on a second plane above the silicon surface carrying the integrated diode and bus lines.
Prior art microbridge thermal detector arrays in a silicon substrate have been fabricated and one such example is shown in the U.S. Pat. No. 3,801,949. In these prior art references, the small pixels have a low fill factor because the detector, the bus lines and the diode are all in the same plane each using a substantial share of the available pixel area.
BRIEF DESCRIPTION OF THE DRAWING
FIG. 1 is an elevation view of the two-level detector.
FIG. 2 is a top plan view of the lower level of the two-level detector.
FIG. 3 is a plan view of the top plane of the detector.
FIG. 3a shows adjoining detectors.
FIG. 4 is a schematic representation of a pixel circuit and connections.
FIGS. 5 and 6 show perspective and top views of an array of the two level detectors.
DESCRIPTION
The elevation and/or cross section view of the two-level pitless microbridge bolometer pixel 10 is shown in FIG. 1. The device 10 has two levels, an elevated microbridge detector level 11 and a lower level 12. The lower level has a flat surfaced semiconductor substrate 13, such as a single crystal silicon substrate. The surface 14 of the silicon substrate 13 has fabricated thereon several components of in integrated circuit 15 including diodes, x and y bus lines, connections, and contact pads at the ends of the x and y bus lines, the fabrication following conventional silicon IC technology. The integrated circuit 15 is coated with a protective layer of silicon nitride 16. A top plan view of the lower level is shown in FIG. 2 and comprises a y-diode metal (via) and a x-diode metal (via), chrome-gold-chrome x and y bus lines, a y-side bus conductor contact 18, an x-side contact 19, and the silicon nitride protective layer. The valley strip 17 is the area not covered by the elevated detector.
Referring again to FIG. 1, the elevated detector level 11 includes a silicon nitride layer 20, a serpentine metallic resistive layer 21, such as of nickel-iron, often called permalloy, a silicon nitride layer 22 over the layers 20 and 21, and an IR absorber coating 23 over the silicon nitride layer 22. The absorber coating may also be of a nickel-iron alloy. Downwardly extending silicon nitride layers 20' and 22' deposited at the same time during the fabrication make up the four sloping support legs for the elevated detector level. The number of support legs may be greater or less than four. The cavity 26 (approximately 3 microns high) between the two levels is ambient atmosphere. During the fabrication process, however, the cavity 26 was originally filled with a previously deposited layer of easily dissolvable glass or other dissolvable material until the layers 20, 20' and 22, 22' were deposited. Subsequently in the process the glass was dissolved out to leave the cavity. In FIG. 1 the horizontal dimension, as shown, is greatly foreshortened for descriptive purposes. That is, the height of FIG. 1 is greatly exaggerated in the drawing compared to the length in order to show the details of the invention.
FIG. 3 is a top plan view of the elevated detector level 11. This drawing is made as though the overlying absorber coating 23 and upper silicon nitride layer 22 are transparent so the tine resistive layer path 21 can be shown. The exact layout of the serpentine pattern 21 is not significant to the invention. The resistive lines and spaces may be about 1.5 micron. Permalloy was selected as the material for the resistive path 21 in one embodiment because of its relatively high resistivity together with a good temperature coefficient of resistance. In one embodiment, the . .resistivity.!. .Iadd.resistance .Iaddend.was on the order of 2500 ohms, with a fill factor of about 75%. The ends of the resistive paths 21a and 21b are continued down the slope area 30 to make electrical contact with pads 31 and 32 on the lower level.
FIG. 3 also shows nitride window cuts 35, 36 and 37 which are opened through the silicon nitride layers 20 and 22 to provide access to the phos-glass beneath for dissolving it from beneath the detector plane. These nitride cuts may be made by ion milling or other suitable process It may be noted that the ion milled cuts 35, 36, 37 to provide this access are very narrow (<2 microns) and are shared with adjacent pixels on the sides, (see FIG. 3a), thus maximizing the area available to the detector and thus maximizing the resulting fill-factor. The four supporting legs may be as short or as long as necessary to provide adequate support and thermal isolation. With the detector thickness of 3000A or less, the thermal impedance is high over the entire detector film. Consequently, short legs should not contribute excessively to the conductance, FIG. 3a shows that the adjacent identical pixels are in close proximity.
FIG. 4 is a schematic representation of a pixel circuit shown in the other figures comprising the sensing element 21 and the connections to it which are clearly labeled on the drawing.
Although the description has been basically in terms of individual detector pixels, the invention is directed to an x,y array assembly of adjoining pixels forming an imaging or mosaic detector array. Each pixel assembly may cover an area about 50 microns on a side, for example. FIG. 5 and 6 as well as FIG. 3 show a section of the array. FIG. 5 shows in perspective the sensing ridges of abutting sensors in a column. This figure is partially cutaway to show the lower level and the cavity as well. The ridges may be about 40 microns wide, so that the elevated detector pixels 11 are on the order of 50×40 microns.
FIG. 6 is a top view block diagram of FIG. 5. In the operation of an array of this general type a suitable IR lens system is usually used to focus a scene onto the array of pixels. A chopper may be used if desired to interrupt the incoming IR energy in synchronism with the related utilizing video electronics. The focused scene heats each pixel according to the energy of the received scene at each pixel position and changes the resistance of the resistive layer 21 according to the pixel temperature.
Further described below is a sequence of fabrication steps for the upper level. Following the deposition of the silicon nitride layer 16 in fabricating the lower level 12 and the cuts of the x-side contact area 19, the y-side bus conductor contact area 18, the cuts of the x-pads and y-pads, the lower level of electronic components and conductors is complete. The construction of the upper level 11 is then ready to commence. A layer of phos-glass or other easily soluble material approximately 3 microns thick is deposited and delineated along x-direction strips and the strip slopes 30 and 30' are thoroughly rounded to eliminate slope coverage problems. In the delineation the glass is cut to less than one micron on the strip 17. The remaining glass is cut to open the strip, and the external glass areas including the x-pad and y-pad. The upper plane silicon nitride base layer 20 is then deposited, the nickel-iron resistance layer 21 is deposited, delineated, and connected to the lower . .plan.!. .Iadd.plane .Iaddend.contacts 18 and 19, and covered with silicone nitride passivation layer 22. The trim site 40 (FIG. 3) is cut, x-pads and y-pads are opened, the absorber coating 23 is deposited and delineated, and finally the side slots 35, 36 and 37 are ion milled allowing the phos-glass to be dissolved from beneath the detector plane.

Claims (13)

The embodiments of the invention in which an exclusive property or rights is claimed are defined as follows:
1. A two-level microbridge bolometer imaging array comprising:
an array of bolometer pixels on a semiconductor substrate, each one of said pixels having a lower section on the surface of the substrate and a microbridge upper detector plane spaced from and immediately above the lower section;
said lower section including a semiconductor diode, x and y bus lines and x and y pads;
said microbridge upper detector plane comprising a bridging dielectric layer having embedded throughout a temperature responsive resistive element having first and second terminals, said microbridge upper detector plane being supported above the lower section by dielectric leg portions which are downward extending continuation of the bridging dielectric layer;
said first and second terminals being continued down said leg portions to said diode and one of said bus lines.
2. The imaging array according to claim 1 wherein said dielectric layer is of silicon nitride.
3. The imaging array according to claim 2 wherein said silicon nitride layer comprises a first layer beneath said temperature responsive resistive element and a second layer over said first layer and said element.
4. The imaging array according to claim 1 wherein said temperature responsive resistive element is of a nickel-iron alloy.
5. The imaging array according to claim 1 wherein the microbridge upper detector plane is raised about 3 microns above the lower section.
6. The method of fabricating a two-level microbridge bolometer imaging array comprising the steps of:
forming on a silicon substrate a lower level of diodes and other components, column and row bus conductors, and x and y contact pads covered by a first dielectric;
opening contact areas through the first dielectric to one of said bus conductors and to one of said diodes contact areas in each pixel of the array, and to said x and y contact pads at the ends of the bus lines;
coating said first dielectric with a layer of glass;
cutting narrow valleys through the glass along the array column conductors and removing the glass from outside the area of the array, and sloping the edges of the remaining glass ridges to accept further coating;
coating the glass ridges and edges with a first thin film layer of silicon nitride;
opening contact areas through the first layer of silicon nitride to one of said bus conductors, and one of said diodes in each pixel of the array, and to the x and y pads;
patterning on the first layer of silicon nitride on each pixel and between the bus line contact area and the diode contact area on each pixel, a separation path of resistive metal which has a substantial temperature coefficient of resistance;
adding a second layer of silicon nitride over the first and over the resistive metal path to passify it, said silicon nitride layers forming an elevated plane;
cutting a narrow slit through the silicon nitride to the glass between adjoining pixels, and cutting additional narrow slits in each pixel area to provide further access to the glass, and cutting the nitride from the x and y pad areas; and
dissolving the glass beneath the silicon nitride layers to leave a cavity between the lower level and the elevated plane.
7. The method according to claim 6 wherein said first dielectric is of silicon nitride.
8. The method according to claim 6 wherein the resistive metal is an alloy of nickel-iron.
9. The method according to claim 6 wherein the layer thickness of the glass is about three microns.
10. The method according to claim 6 wherein the cavity is about three microns high. .Iadd.11. A two-level microbridge infrared thermal detector apparatus comprising:
a pixel on a semiconductor substrate, said pixel having a lower section on the surface of said substrate and a microbridge upper detector plane section spaced from and immediately above the lower section;
said lower section including integrated circuit means;
said microbridge upper detector section comprising a bridging dielectric layer having mounted thereon a temperature responsive detector having first and second terminals, said microbridge upper detector section being supported above said lower section by dielectric leg portions which are downward extending continuations of the bridging dielectric layer; and
said first and second terminals being continued down said leg portions to said integrated circuit means. .Iaddend..Iadd.12. The detector apparatus according to claim 11 wherein said dielectric layer is of silicon nitride. .Iaddend..Iadd.13. The detector apparatus according to claim 12 wherein said silicon nitride layer comprises a first layer beneath said temperature responsive means and a second layer over said first layer and said temperature responsive means. .Iaddend..Iadd.14. The detector apparatus according to claim 11 wherein said temperature responsive means is of a nickel-iron alloy type resistive element. .Iaddend..Iadd.15. The detector apparatus according to claim 11 wherein the microbridge upper detector section is raised about 3 microns above said lower section. .Iaddend..Iadd.16. The detector apparatus according to claim 11 wherein said upper detector plane section includes an infrared absorber coating over said temperature responsive means. .Iaddend..Iadd.17. A two-level microbridge uncooled infrared thermal detector array comprising:
an array of pixels on a semiconductor substrate, each one of said pixels having a lower section on the surface of said substrate and a microbridge upper detector section spaced from and immediately above the lower section;
said lower section including integrated circuit means;
said microbridge upper detector section comprising a bridging dielectric layer having mounted thereon a temperature responsive detector having first and second terminals, said microbridge upper detector section being supported above said lower section by dielectric leg portions which are downward extending continuations of the bridging dielectric layer; and
said first and second terminals being continued down said leg portions to said integrated circuit means. .Iaddend..Iadd.18. The detector array according to claim 17 wherein said dielectric layer is of silicon nitride. .Iaddend..Iadd.19. The detector array according to claim 18 wherein said silicon nitride layer comprises a first layer beneath said temperature responsive means and a second layer over said first layer and said
temperature responsive means. .Iaddend..Iadd.20. The detector array according to claim 17 wherein said temperature responsive means is a nickel-iron alloy type resistive element. .Iaddend..Iadd.21. The detector array according to claim 17 wherein the microbridge upper detector section is a plane raised about 3 microns above the lower section. .Iaddend..Iadd.22. The detector array according to claim 17 wherein said upper detector section includes an infrared absorber coating over said temperature responsive means. .Iaddend..Iadd.23. The method of fabricating an array of two-level microbridge bolometer pixels comprising the steps of:
forming on a silicon substrate a lower level of integrated circuit means having at least two contacts per pixel covered by a first dielectric;
opening contact areas for each pixel through said first dielectric to said two contacts of said integrated circuit means;
coating said first dielectric with a layer of dissolvable material;
cutting narrow valleys through said dissolvable material to form ridges, removing the dissolvable material from said contacts and from outside the areas of the array, and sloping the edges of the remaining dissolvable material ridges to accent further coating;
coating the dissolvable material ridges and edges with a first thin film dielectric bridging layer;
opening contact areas through the first dielectric bridging layer to said contacts;
depositing on said first dielectric bridging layer of each pixel a thin film layer of resistive material which has a substantial temperature coefficient of resistance;
patterning a separation path having two ends in said thin film layer of resistive material including connecting, via said sloping edges, said ends of said path respectively, to said contacts;
adding a second thin film layer of dielectric material over said first bridging layer and over said patterned resistive material path to passify it, said dielectric layers and said resistive material forming an elevated plane;
cutting a narrow slit through said dielectric layers to the dissolvable material between adjoining pixels, cutting additional narrow slits in each pixel area to provide further access to the dissolvable material; and
dissolving the dissolvable material beneath said dielectric layers to leave a cavity between said lower level and said elevated plane.
.Iaddend..Iadd. 4. The method according to claim 23 wherein said first dielectric and said bridging dielectric layers are of silicon nitride. .Iaddend..Iadd.25. The method according to claim 23 wherein the resistive material is an alloy of nickel-iron. .Iaddend..Iadd.26. The method according to claim 23 wherein the layer thickness of the dissolvable material is about three microns. .Iaddend..Iadd.27. The method according to claim 23 wherein said cavity is about three microns high. .Iaddend..Iadd.28. The method according to claim 23 wherein an absorber thin film coating is deposited and delineated on said elevated plane prior to said cutting. .Iaddend..Iadd.29. The method according to claim 23 wherein said dissolvable material is glass. .Iaddend..Iadd.30. The method of fabricating an array of two-level microbridge infrared thermal detector pixels comprising the steps of:
forming on a silicon substrate a lower level of integrated circuit means having at least two contacts per pixel covered by a first dielectric;
opening contact areas for each pixel through said first dielectric to said two contacts of said integrated circuit means;
coating said first dielectric with a layer of dissolvable material;
cutting narrow valleys through said dissolvable material to form ridges, removing the dissolvable material from said contacts and from outside the areas of the array and sloping the edges of the remaining dissolvable material ridges to accept further coating;
coating the dissolvable material ridges and edges with a first thin film dielectric bridging layer;
opening contact areas through the first dielectric bridging layer to said contacts;
depositing on said first dielectric bridging layer of each pixel a thin film layer of resistive material which has a substantial temperature coefficient of resistance;
depositing on said first dielectric bridging layer of each pixel a thermal detector means which has (i) a significant change in characteristics as a function of temperature, and (ii) two contacts electrically connected via said sloping edges, respectively, to said two contacts of each pixel;
adding a second thin film layer of dielectric material over said temperature responsive means and said first bridging layer, said dielectric layers and said temperature responsive means forming an elevated plane;
cutting a narrow slit through said dielectric layers to the dissolvable material between adjoining pixels, cutting additional narrow slits in each pixel area to provide further access to the dissolvable material; and
dissolving the dissolvable material beneath said dielectric layers to leave a cavity between said lower level and said elevated plane.
.Iaddend..Iadd. 1. The method according to claim 30 wherein the layer thickness of the dissolvable material is about three microns. .Iaddend..Iadd.32. The method according to claim 30 wherein said cavity is about three microns high. .Iaddend..Iadd.33. The method according to claim 30 wherein an absorber thin film coating is deposited and delineated on said elevated plane prior to said cutting. .Iaddend..Iadd.34. The method according to claim 30 wherein said dissolvable material is glass. .Iaddend.
US08/627,598 1986-07-16 1996-04-04 Thermal sensor Expired - Lifetime USRE36136E (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US08/627,598 USRE36136E (en) 1986-07-16 1996-04-04 Thermal sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/887,495 US5300915A (en) 1986-07-16 1986-07-16 Thermal sensor
US08/627,598 USRE36136E (en) 1986-07-16 1996-04-04 Thermal sensor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US06/887,495 Reissue US5300915A (en) 1986-07-16 1986-07-16 Thermal sensor

Publications (1)

Publication Number Publication Date
USRE36136E true USRE36136E (en) 1999-03-09

Family

ID=25391269

Family Applications (2)

Application Number Title Priority Date Filing Date
US06/887,495 Ceased US5300915A (en) 1986-07-16 1986-07-16 Thermal sensor
US08/627,598 Expired - Lifetime USRE36136E (en) 1986-07-16 1996-04-04 Thermal sensor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US06/887,495 Ceased US5300915A (en) 1986-07-16 1986-07-16 Thermal sensor

Country Status (1)

Country Link
US (2) US5300915A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6292089B1 (en) * 1996-01-11 2001-09-18 Imc Industriellt Mikroelektronikcentrum Ab Structures for temperature sensors and infrared detectors
US6541772B2 (en) 2000-12-26 2003-04-01 Honeywell International Inc. Microbolometer operating system
US6559447B2 (en) 2000-12-26 2003-05-06 Honeywell International Inc. Lightweight infrared camera
US6690012B1 (en) 2000-10-13 2004-02-10 Litton Systems, Inc. Hybridized lead-salt infrared radiation detectors and methods of formation
US20040084308A1 (en) * 2002-11-01 2004-05-06 Cole Barrett E. Gas sensor
US7002153B1 (en) 1999-08-24 2006-02-21 Qinetiq Limited Micro-bridge structure
US7170059B2 (en) 2003-10-03 2007-01-30 Wood Roland A Planar thermal array
US7365326B2 (en) 2000-12-26 2008-04-29 Honeywell International Inc. Camera having distortion correction
US8314769B2 (en) 2010-04-28 2012-11-20 Honeywell International Inc. High performance detection pixel
WO2017007373A1 (en) * 2015-07-03 2017-01-12 Photoelectronic Devices Llc Thermal radiation sensor and method of manufacturing same

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2274943B (en) * 1993-02-06 1996-08-28 British Aerospace Thermal picture synthesis device
US5449910A (en) * 1993-11-17 1995-09-12 Honeywell Inc. Infrared radiation imaging array with compound sensors forming each pixel
JP2833450B2 (en) * 1993-11-24 1998-12-09 日本電気株式会社 Infrared imaging device
US5446284A (en) * 1994-01-25 1995-08-29 Loral Infrared & Imaging Systems, Inc. Monolithic detector array apparatus
US5600174A (en) * 1994-10-11 1997-02-04 The Board Of Trustees Of The Leeland Stanford Junior University Suspended single crystal silicon structures and method of making same
JP3287173B2 (en) * 1995-04-07 2002-05-27 三菱電機株式会社 Infrared detector
US5602393A (en) * 1995-06-07 1997-02-11 Hughes Aircraft Company Microbolometer detector element with enhanced sensitivity
US6392232B1 (en) * 1995-07-21 2002-05-21 Pharmarcopeia, Inc. High fill factor bolometer array
US6064066A (en) * 1995-07-21 2000-05-16 Texas Insruments Incorporated Bolometer autocalibration
EP0773435A3 (en) * 1995-07-21 1998-03-11 Texas Instruments Incorporated Method and devices for measuring radiation
US5789753A (en) * 1995-07-21 1998-08-04 Texas Instruments Incorporated Stress tolerant bolometer
US5841137A (en) * 1995-08-11 1998-11-24 Texas Instruments Incorporated Duplicative detector sensor
US7495220B2 (en) * 1995-10-24 2009-02-24 Bae Systems Information And Electronics Systems Integration Inc. Uncooled infrared sensor
US5811815A (en) * 1995-11-15 1998-09-22 Lockheed-Martin Ir Imaging Systems, Inc. Dual-band multi-level microbridge detector
US6515285B1 (en) 1995-10-24 2003-02-04 Lockheed-Martin Ir Imaging Systems, Inc. Method and apparatus for compensating a radiation sensor for ambient temperature variations
WO1997021250A1 (en) * 1995-12-04 1997-06-12 Lockheed-Martin Ir Imaging Systems, Inc. Infrared radiation detector having a reduced active area
US5584117A (en) * 1995-12-11 1996-12-17 Industrial Technology Research Institute Method of making an interferometer-based bolometer
JP3608858B2 (en) * 1995-12-18 2005-01-12 三菱電機株式会社 Infrared detector and manufacturing method thereof
US6249002B1 (en) 1996-08-30 2001-06-19 Lockheed-Martin Ir Imaging Systems, Inc. Bolometric focal plane array
US5831266A (en) * 1996-09-12 1998-11-03 Institut National D'optique Microbridge structure for emitting or detecting radiations and method for forming such microbridge structure
US5962909A (en) * 1996-09-12 1999-10-05 Institut National D'optique Microstructure suspended by a microsupport
US5811808A (en) 1996-09-12 1998-09-22 Amber Engineering, Inc. Infrared imaging system employing on-focal plane nonuniformity correction
US6791610B1 (en) 1996-10-24 2004-09-14 Lockheed Martin Ir Imaging Systems, Inc. Uncooled focal plane array sensor
US7176111B2 (en) * 1997-03-28 2007-02-13 Interuniversitair Microelektronica Centrum (Imec) Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof
EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US6459084B1 (en) 1997-05-30 2002-10-01 University Of Central Florida Area receiver with antenna-coupled infrared sensors
US6097031A (en) * 1997-07-25 2000-08-01 Honeywell Inc. Dual bandwith bolometer
JP3003853B2 (en) 1997-09-09 2000-01-31 本田技研工業株式会社 Sensor with bridge structure
JPH11148861A (en) * 1997-09-09 1999-06-02 Honda Motor Co Ltd Microbidge structure
US6339219B1 (en) 1998-06-20 2002-01-15 Nikon Corporation Radiation imaging device and radiation detector
KR100529133B1 (en) * 1998-06-30 2006-01-27 주식회사 대우일렉트로닉스 Infrared rays absorption bolometer
WO2000004354A1 (en) * 1998-07-14 2000-01-27 Daewoo Electronics Co., Ltd. Method for manufacturing a three level bolometer
US6201243B1 (en) 1998-07-20 2001-03-13 Institut National D'optique Microbridge structure and method for forming the microbridge structure
WO2000012986A1 (en) * 1998-08-31 2000-03-09 Daewoo Electronics Co., Ltd. Bolometer including a reflective layer
EP1117978B1 (en) * 1998-08-31 2005-06-15 Daewoo Electronics Corporation Bolometer with a serpentine stress balancing member
JP3080093B2 (en) 1998-09-01 2000-08-21 日本電気株式会社 Oxide thin film for bolometer and infrared sensor using the oxide thin film
JP2002531821A (en) * 1998-11-30 2002-09-24 デーウー・エレクトロニクス・カンパニー・リミテッド Infrared bolometer
CN1163733C (en) * 1998-12-04 2004-08-25 株式会社大宇电子 Infrared bolometer and method for manufacturing same
US6307194B1 (en) 1999-06-07 2001-10-23 The Boeing Company Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method
US6144285A (en) * 1999-09-13 2000-11-07 Honeywell International Inc. Thermal sensor and method of making same
US6444983B1 (en) 1999-10-07 2002-09-03 Infrared Solutions, Inc. Microbolometer focal plane array with controlled bias
US6953932B2 (en) * 1999-10-07 2005-10-11 Infrared Solutions, Inc. Microbolometer focal plane array with temperature compensated bias
US6479320B1 (en) 2000-02-02 2002-11-12 Raytheon Company Vacuum package fabrication of microelectromechanical system devices with integrated circuit components
US6521477B1 (en) 2000-02-02 2003-02-18 Raytheon Company Vacuum package fabrication of integrated circuit components
US6630674B2 (en) 2000-03-17 2003-10-07 Infrared Components Corporation Method and apparatus for correction of microbolometer output
US6610984B2 (en) 2000-03-17 2003-08-26 Infrared Components Corporation Method and apparatus for correction of microbolometer output
US6690014B1 (en) 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
US6730909B2 (en) 2000-05-01 2004-05-04 Bae Systems, Inc. Methods and apparatus for compensating a radiation sensor for temperature variations of the sensor
US6465785B1 (en) 2000-05-05 2002-10-15 Infrared Solutions, Inc. Apparatus and method for compensating for pixel non-uniformity in a bolometer
AUPQ897600A0 (en) * 2000-07-25 2000-08-17 Liddiard, Kevin Active or self-biasing micro-bolometer infrared detector
US6507021B1 (en) 2000-11-15 2003-01-14 Drs Sensors & Targeting Systems, Inc. Reference bolometer and associated fabrication methods
US6489616B2 (en) 2001-03-19 2002-12-03 The Board Of Governors Of Southwest Missouri State University Doped, organic carbon-containing sensor for infrared detection and a process for the preparation thereof
US6777681B1 (en) 2001-04-25 2004-08-17 Raytheon Company Infrared detector with amorphous silicon detector elements, and a method of making it
US6683310B2 (en) 2001-06-18 2004-01-27 Honeywell International Inc. Readout technique for microbolometer array
US7196790B2 (en) * 2002-03-18 2007-03-27 Honeywell International Inc. Multiple wavelength spectrometer
JP2004062938A (en) * 2002-07-25 2004-02-26 Pioneer Electronic Corp Spherical aberration correcting device and spherical aberration correcting method
US7378655B2 (en) * 2003-04-11 2008-05-27 California Institute Of Technology Apparatus and method for sensing electromagnetic radiation using a tunable device
US7030378B2 (en) * 2003-08-05 2006-04-18 Bae Systems Information And Electronic Systems Integration, Inc. Real-time radiation sensor calibration
WO2005034248A1 (en) * 2003-10-09 2005-04-14 Ocas Corp. Bolometric infrared sensor having two layer structure and method for manufacturing the same
KR100517428B1 (en) * 2003-12-17 2005-09-28 한국과학기술원 Infrared Bolometer
US7531363B2 (en) * 2003-12-30 2009-05-12 Honeywell International Inc. Particle detection using fluorescence
US7880777B2 (en) * 2005-05-26 2011-02-01 Fluke Corporation Method for fixed pattern noise reduction in infrared imaging cameras
US7655909B2 (en) * 2006-01-26 2010-02-02 L-3 Communications Corporation Infrared detector elements and methods of forming same
US7462831B2 (en) * 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
JP4721141B2 (en) * 2006-03-17 2011-07-13 日本電気株式会社 Thermal infrared solid-state image sensor
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
US8153980B1 (en) 2006-11-30 2012-04-10 L-3 Communications Corp. Color correction for radiation detectors
US7705309B1 (en) * 2007-02-27 2010-04-27 Agiltron Corporation Radiation detector with extended dynamic range
US7786440B2 (en) 2007-09-13 2010-08-31 Honeywell International Inc. Nanowire multispectral imaging array
US7750301B1 (en) 2007-10-02 2010-07-06 Flir Systems, Inc. Microbolometer optical cavity tuning and calibration systems and methods
US9658111B2 (en) 2009-10-09 2017-05-23 Flir Systems, Inc. Microbolometer contact systems and methods
US8729474B1 (en) 2009-10-09 2014-05-20 Flir Systems, Inc. Microbolometer contact systems and methods
US8765514B1 (en) 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
US9167179B2 (en) 2011-02-21 2015-10-20 Vectronix, Inc. On-board non-uniformity correction calibration methods for microbolometer focal plane arrays
EP2745096B1 (en) 2011-08-17 2016-10-12 Public Service Solutions Inc Passive detectors for imaging systems
TWI476969B (en) * 2012-01-13 2015-03-11 Univ Nat Kaohsiung Applied Sci Metal silicide thermal sensor and its preparation method
US8900906B2 (en) 2012-03-08 2014-12-02 Robert Bosch Gmbh Atomic layer deposition strengthening members and method of manufacture
DE102012217881A1 (en) * 2012-10-01 2014-04-03 Siemens Aktiengesellschaft Sensor arrangement and manufacturing method
DE102013102206B4 (en) * 2013-03-06 2016-04-07 Epcos Ag Device with stacked functional structures and method of manufacture
US9199838B2 (en) 2013-10-25 2015-12-01 Robert Bosch Gmbh Thermally shorted bolometer
US11528442B2 (en) 2019-12-23 2022-12-13 Sivananthan Laboratories, Inc. Adjacent electrode which provides pixel delineation for monolithic integration of a colloidal quantum dot photodetector film with a readout integrated circuit
US11674077B2 (en) 2020-01-03 2023-06-13 Sivananthan Laboratories, Inc. Process for the post-deposition treament of colloidal quantum dot photodetector films to improve performance by using hydrogen peroxide

Citations (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484611A (en) * 1967-05-16 1969-12-16 Hitachi Ltd Infrared detector composed of a sintered body of vanadium pentoxide and vanadium oxide
US3619614A (en) * 1967-12-31 1971-11-09 Matsushita Electric Ind Co Ltd An infrared intensity detector
US3629585A (en) * 1968-12-31 1971-12-21 Philips Corp Immersed bolometer using thin film thermistors
US3693011A (en) * 1971-02-02 1972-09-19 Hughes Aircraft Co Ion implanted bolometer
US3801949A (en) * 1973-03-08 1974-04-02 Rca Corp Thermal detector and method of making the same
DE2253214A1 (en) * 1972-10-30 1974-05-22 Siemens Ag DEVICE FOR MEASURING TEMPERATURE RADIATION
US3851174A (en) * 1973-05-04 1974-11-26 Ibm Light detector for the nanosecond-dc pulse width range
US3896309A (en) * 1973-05-21 1975-07-22 Westinghouse Electric Corp Radiation detecting device
US3898605A (en) * 1974-06-19 1975-08-05 Us Navy Integrated optical bolometer for detection of infrared radiation
US4009516A (en) * 1976-03-29 1977-03-01 Honeywell Inc. Pyroelectric detector fabrication
US4029962A (en) * 1975-06-23 1977-06-14 Texas Instruments Incorporated Arrays for infrared image detection
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
US4115692A (en) * 1977-05-04 1978-09-19 The United States Of America As Represented By The Secretary Of The Army Solid state readout device for a two dimensional pyroelectric detector array
US4169273A (en) * 1978-06-26 1979-09-25 Honeywell Inc. Photodetector signal processing
US4239312A (en) * 1978-11-29 1980-12-16 Hughes Aircraft Company Parallel interconnect for planar arrays
US4286278A (en) * 1977-09-01 1981-08-25 Honeywell Inc. Hybrid mosaic IR/CCD focal plane
US4293768A (en) * 1978-04-26 1981-10-06 Murata Manufacturing Co., Ltd. Infrared radiation detecting apparatus and method of manufacturing
US4317126A (en) * 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
US4354109A (en) * 1979-12-31 1982-10-12 Honeywell Inc. Mounting for pyroelectric detecctor arrays
US4365106A (en) * 1979-08-24 1982-12-21 Pulvari Charles F Efficient method and apparatus for converting solar energy to electrical energy
US4378489A (en) * 1981-05-18 1983-03-29 Honeywell Inc. Miniature thin film infrared calibration source
JPS58131525A (en) * 1982-01-31 1983-08-05 Matsushita Electric Works Ltd Infrared-ray detector
US4463493A (en) * 1981-10-14 1984-08-07 Tokyo Shibaura Denki Kabushiki Kaisha Method for making mask aligned narrow isolation grooves for a semiconductor device
US4472239A (en) * 1981-10-09 1984-09-18 Honeywell, Inc. Method of making semiconductor device
JPS60119426A (en) * 1983-12-01 1985-06-26 Murata Mfg Co Ltd Thin film type pyroelectric sensor array
US4574263A (en) * 1980-09-24 1986-03-04 The Commonwealth Of Australia Infrared radiation detector
JPS61170626A (en) * 1985-01-24 1986-08-01 Matsushita Electric Ind Co Ltd Infrared linear array element
JPS61195318A (en) * 1985-02-26 1986-08-29 Matsushita Electric Ind Co Ltd Pyroelectric type infrared detector
US4654622A (en) * 1985-09-30 1987-03-31 Honeywell Inc. Monolithic integrated dual mode IR/mm-wave focal plane sensor
US4691104A (en) * 1984-06-14 1987-09-01 Murata Manufacturing Co., Ltd. One-dimensional pyroelectric sensor array
US4750834A (en) * 1986-01-07 1988-06-14 D.O.M. Associates, Inc. Interferometer including stationary, electrically alterable optical masking device
US4754139A (en) * 1986-04-10 1988-06-28 Aerojet-General Corporation Uncooled high resolution infrared imaging plane
US4803360A (en) * 1984-09-19 1989-02-07 U.S. Philips Corp. Infrared radiation detector with flanged semiconductor window
JPH01136035A (en) * 1987-11-24 1989-05-29 Hamamatsu Photonics Kk Pyroelectric detection element and manufacture thereof
JPH0341305A (en) * 1989-07-07 1991-02-21 Matsushita Electric Ind Co Ltd Pyroelectric device for detecting infrared ray
US5017784A (en) * 1985-03-11 1991-05-21 Savin Corporation Thermal detector
WO1991016607A1 (en) * 1990-04-26 1991-10-31 Commonwealth Of Australia, The Secretary Department Of Defence Semiconductor film bolometer thermal infrared detector
US5455421A (en) * 1985-08-13 1995-10-03 Massachusetts Institute Of Technology Infrared detector using a resonant optical cavity for enhanced absorption

Patent Citations (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484611A (en) * 1967-05-16 1969-12-16 Hitachi Ltd Infrared detector composed of a sintered body of vanadium pentoxide and vanadium oxide
US3619614A (en) * 1967-12-31 1971-11-09 Matsushita Electric Ind Co Ltd An infrared intensity detector
US3629585A (en) * 1968-12-31 1971-12-21 Philips Corp Immersed bolometer using thin film thermistors
US3693011A (en) * 1971-02-02 1972-09-19 Hughes Aircraft Co Ion implanted bolometer
DE2253214A1 (en) * 1972-10-30 1974-05-22 Siemens Ag DEVICE FOR MEASURING TEMPERATURE RADIATION
US3801949A (en) * 1973-03-08 1974-04-02 Rca Corp Thermal detector and method of making the same
US3851174A (en) * 1973-05-04 1974-11-26 Ibm Light detector for the nanosecond-dc pulse width range
US3896309A (en) * 1973-05-21 1975-07-22 Westinghouse Electric Corp Radiation detecting device
US3898605A (en) * 1974-06-19 1975-08-05 Us Navy Integrated optical bolometer for detection of infrared radiation
US4029962A (en) * 1975-06-23 1977-06-14 Texas Instruments Incorporated Arrays for infrared image detection
US4009516A (en) * 1976-03-29 1977-03-01 Honeywell Inc. Pyroelectric detector fabrication
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
US4115692A (en) * 1977-05-04 1978-09-19 The United States Of America As Represented By The Secretary Of The Army Solid state readout device for a two dimensional pyroelectric detector array
US4286278A (en) * 1977-09-01 1981-08-25 Honeywell Inc. Hybrid mosaic IR/CCD focal plane
US4293768A (en) * 1978-04-26 1981-10-06 Murata Manufacturing Co., Ltd. Infrared radiation detecting apparatus and method of manufacturing
US4169273A (en) * 1978-06-26 1979-09-25 Honeywell Inc. Photodetector signal processing
US4239312A (en) * 1978-11-29 1980-12-16 Hughes Aircraft Company Parallel interconnect for planar arrays
US4365106A (en) * 1979-08-24 1982-12-21 Pulvari Charles F Efficient method and apparatus for converting solar energy to electrical energy
US4354109A (en) * 1979-12-31 1982-10-12 Honeywell Inc. Mounting for pyroelectric detecctor arrays
US4317126A (en) * 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
US4574263A (en) * 1980-09-24 1986-03-04 The Commonwealth Of Australia Infrared radiation detector
US4378489A (en) * 1981-05-18 1983-03-29 Honeywell Inc. Miniature thin film infrared calibration source
US4472239A (en) * 1981-10-09 1984-09-18 Honeywell, Inc. Method of making semiconductor device
US4463493A (en) * 1981-10-14 1984-08-07 Tokyo Shibaura Denki Kabushiki Kaisha Method for making mask aligned narrow isolation grooves for a semiconductor device
JPS58131525A (en) * 1982-01-31 1983-08-05 Matsushita Electric Works Ltd Infrared-ray detector
JPS60119426A (en) * 1983-12-01 1985-06-26 Murata Mfg Co Ltd Thin film type pyroelectric sensor array
US4691104A (en) * 1984-06-14 1987-09-01 Murata Manufacturing Co., Ltd. One-dimensional pyroelectric sensor array
US4803360A (en) * 1984-09-19 1989-02-07 U.S. Philips Corp. Infrared radiation detector with flanged semiconductor window
JPS61170626A (en) * 1985-01-24 1986-08-01 Matsushita Electric Ind Co Ltd Infrared linear array element
JPS61195318A (en) * 1985-02-26 1986-08-29 Matsushita Electric Ind Co Ltd Pyroelectric type infrared detector
US5017784A (en) * 1985-03-11 1991-05-21 Savin Corporation Thermal detector
US5455421A (en) * 1985-08-13 1995-10-03 Massachusetts Institute Of Technology Infrared detector using a resonant optical cavity for enhanced absorption
US4654622A (en) * 1985-09-30 1987-03-31 Honeywell Inc. Monolithic integrated dual mode IR/mm-wave focal plane sensor
US4750834A (en) * 1986-01-07 1988-06-14 D.O.M. Associates, Inc. Interferometer including stationary, electrically alterable optical masking device
US4754139A (en) * 1986-04-10 1988-06-28 Aerojet-General Corporation Uncooled high resolution infrared imaging plane
JPH01136035A (en) * 1987-11-24 1989-05-29 Hamamatsu Photonics Kk Pyroelectric detection element and manufacture thereof
JPH0341305A (en) * 1989-07-07 1991-02-21 Matsushita Electric Ind Co Ltd Pyroelectric device for detecting infrared ray
WO1991016607A1 (en) * 1990-04-26 1991-10-31 Commonwealth Of Australia, The Secretary Department Of Defence Semiconductor film bolometer thermal infrared detector

Non-Patent Citations (18)

* Cited by examiner, † Cited by third party
Title
A. Tanaka, et al., Infrared Linear Image Sensor using a Poly Si pn Junction Diode Array , 33 Infrared Phys., 229 236, 1982. *
A. Tanaka, et al., Infrared Linear Image Sensor using a Poly-Si pn Junction Diode Array, 33 Infrared Phys., 229-236, 1982.
E. Basseous, Fabrication of Novel Three Dimensional Microstructures by the Anisotropic Etching of ( 100 ) and ( 110 ) Silicon , 10 IEEE Transactions on Electron Devices, 1178 1185, 1978 (FF). *
E. Basseous, Fabrication of Novel Three Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon, 10 IEEE Transactions on Electron Devices, 1178-1185, 1978 (FF).
H. Elabd & W.F. Kosonocky, Theory and Measurements of Photoresponse for Thin Film Pd 2 Si and PtSi Infrared Schottky Barrier Detectors with Optical Cavity , 43 RCA Review, 569 588, 1982. *
H. Elabd & W.F. Kosonocky, Theory and Measurements of Photoresponse for Thin Film Pd2 Si and PtSi Infrared Schottky-Barrier Detectors with Optical Cavity, 43 RCA Review, 569-588, 1982.
K.C. Liddiard, Thin Film Resistance Bolometer IR Detectors , Infrared Phys., vol. 24, No. 1, 57 64, 1984. *
K.C. Liddiard, Thin film Resistance Bolometer IR Detectors II , Infrared Phys., vol. 26, No. 1, 43 49, 1986. *
K.C. Liddiard, Thin Film Resistance Bolometer IR Detectors, Infrared Phys., vol. 24, No. 1, 57-64, 1984.
K.C. Liddiard, Thin-film Resistance Bolometer IR Detectors-II, Infrared Phys., vol. 26, No. 1, 43-49, 1986.
Kurt E. Peterson, Dynamic Micromechanics on Silicon: Techniques and Devices , 10, IEEE Transactions on Electron Devices, 1241 1250, 1978. *
Kurt E. Peterson, Dynamic Micromechanics on Silicon: Techniques and Devices, 10, IEEE Transactions on Electron Devices, 1241-1250, 1978.
Kurt Peterson & Anne Shartel, Macromechanical Accelerometer Integrated with MOS Detection Circuitry , IBM Research Facility, 1980. *
Kurt Peterson & Anne Shartel, Macromechanical Accelerometer Integrated with MOS Detection Circuitry, IBM Research Facility, 1980.
M. Okuyama, et al., Si Monolithic Integrated Pyroelectric Infrared Sensor Using PbTiO 3 Thin Film , 6. International Journal of Infrared and Millimeter Waves, 71 78, 1985. *
M. Okuyama, et al., Si-Monolithic Integrated Pyroelectric Infrared Sensor Using PbTiO3 Thin Film, 6. International Journal of Infrared and Millimeter Waves, 71-78, 1985.
Suzuld, et al. An Infrared Detector Using Poly Silicon p n Junction Diode , Tech Digest of 9th Sensor Symposium, 71 74, 1990. *
Suzuld, et al. An Infrared Detector Using Poly-Silicon p-n Junction Diode, Tech Digest of 9th Sensor Symposium, 71-74, 1990.

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6292089B1 (en) * 1996-01-11 2001-09-18 Imc Industriellt Mikroelektronikcentrum Ab Structures for temperature sensors and infrared detectors
US7002153B1 (en) 1999-08-24 2006-02-21 Qinetiq Limited Micro-bridge structure
US6690012B1 (en) 2000-10-13 2004-02-10 Litton Systems, Inc. Hybridized lead-salt infrared radiation detectors and methods of formation
US6734516B2 (en) 2000-10-13 2004-05-11 Litton Systems, Inc. Monolithic lead-salt infrared radiation detectors and methods of formation
US6661010B2 (en) 2000-12-26 2003-12-09 Honeywell International Inc. Microbolometer operating system
US6559447B2 (en) 2000-12-26 2003-05-06 Honeywell International Inc. Lightweight infrared camera
US6541772B2 (en) 2000-12-26 2003-04-01 Honeywell International Inc. Microbolometer operating system
US7365326B2 (en) 2000-12-26 2008-04-29 Honeywell International Inc. Camera having distortion correction
US20090321637A1 (en) * 2000-12-26 2009-12-31 Honeywell International Inc. Camera having distortion correction
US20040084308A1 (en) * 2002-11-01 2004-05-06 Cole Barrett E. Gas sensor
US7170059B2 (en) 2003-10-03 2007-01-30 Wood Roland A Planar thermal array
US8314769B2 (en) 2010-04-28 2012-11-20 Honeywell International Inc. High performance detection pixel
WO2017007373A1 (en) * 2015-07-03 2017-01-12 Photoelectronic Devices Llc Thermal radiation sensor and method of manufacturing same

Also Published As

Publication number Publication date
US5300915A (en) 1994-04-05

Similar Documents

Publication Publication Date Title
USRE36136E (en) Thermal sensor
US4914055A (en) Semiconductor antifuse structure and method
JP4137196B2 (en) Infrared detector and manufacturing method thereof
EP1212592B1 (en) Thermal sensor and method of making same
US6201243B1 (en) Microbridge structure and method for forming the microbridge structure
US5939971A (en) Infrared bolometer
KR100530440B1 (en) A thermal detector array
WO1993026050A1 (en) Two-level microbridge bolometer imaging array and method of making same
US4720738A (en) Focal plane array structure including a signal processing system
US6094127A (en) Infrared bolometer and method for manufacturing same
US5959298A (en) Infrared detector array with an elevated thin film
EP0645054B1 (en) Two-level microbridge bolometer imaging array and method of making same
EP1137918B1 (en) Infrared bolometer
CA2534190C (en) Planar thermal array
JPH0621423A (en) Infrared detection device and its manufacture
US5631467A (en) Etching of ceramic materials with an elevated thin film
JP2852562B2 (en) Temperature sensor
JP3715886B2 (en) Manufacturing method and structure of thermal infrared solid-state imaging device
JPS5870588A (en) Temperature sensor and method of producing same
EP1141669B1 (en) Infrared bolometer and method for manufacturing same
KR100299642B1 (en) Three-level infra-red bolometer
EP0281026A2 (en) High density optical mosaic detector and method for its fabrication
WO2000003214A1 (en) Bolometer having an increased fill factor
JP3408163B2 (en) Semiconductor device and manufacturing method thereof

Legal Events

Date Code Title Description
FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FEPP Fee payment procedure

Free format text: PETITION RELATED TO MAINTENANCE FEES FILED (ORIGINAL EVENT CODE: PMFP); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: PETITION RELATED TO MAINTENANCE FEES GRANTED (ORIGINAL EVENT CODE: PMFG); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

SULP Surcharge for late payment
FPAY Fee payment

Year of fee payment: 12