USB316014I5 - - Google Patents
Info
- Publication number
- USB316014I5 USB316014I5 US31601472A USB316014I5 US B316014 I5 USB316014 I5 US B316014I5 US 31601472 A US31601472 A US 31601472A US B316014 I5 USB316014 I5 US B316014I5
- Authority
- US
- United States
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US316014A US3920861A (en) | 1972-12-18 | 1972-12-18 | Method of making a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US316014A US3920861A (en) | 1972-12-18 | 1972-12-18 | Method of making a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
USB316014I5 true USB316014I5 (ja) | 1975-01-28 |
US3920861A US3920861A (en) | 1975-11-18 |
Family
ID=23227090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US316014A Expired - Lifetime US3920861A (en) | 1972-12-18 | 1972-12-18 | Method of making a semiconductor device |
Country Status (1)
Country | Link |
---|---|
US (1) | US3920861A (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3994758A (en) * | 1973-03-19 | 1976-11-30 | Nippon Electric Company, Ltd. | Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection |
US4212022A (en) * | 1973-04-30 | 1980-07-08 | Licentia Patent-Verwaltungs-G.M.B.H. | Field effect transistor with gate and drain electrodes on the side surface of a mesa |
JPS5131186A (ja) * | 1974-09-11 | 1976-03-17 | Hitachi Ltd | |
US4063992A (en) * | 1975-05-27 | 1977-12-20 | Fairchild Camera And Instrument Corporation | Edge etch method for producing narrow openings to the surface of materials |
GB1563913A (en) * | 1975-12-12 | 1980-04-02 | Hughes Aircraft Co | Method of making schottky-barrier gallium arsenide field effect devices |
US4045594A (en) * | 1975-12-31 | 1977-08-30 | Ibm Corporation | Planar insulation of conductive patterns by chemical vapor deposition and sputtering |
US3999281A (en) * | 1976-01-16 | 1976-12-28 | The United States Of America As Represented By The Secretary Of The Air Force | Method for fabricating a gridded Schottky barrier field effect transistor |
US4061530A (en) * | 1976-07-19 | 1977-12-06 | Fairchild Camera And Instrument Corporation | Process for producing successive stages of a charge coupled device |
JPS5370688A (en) * | 1976-12-06 | 1978-06-23 | Toshiba Corp | Production of semoconductor device |
US4145459A (en) * | 1978-02-02 | 1979-03-20 | Rca Corporation | Method of making a short gate field effect transistor |
US4194285A (en) * | 1978-06-15 | 1980-03-25 | Rca Corporation | Method of making a field effect transistor |
US4334348A (en) * | 1980-07-21 | 1982-06-15 | Data General Corporation | Retro-etch process for forming gate electrodes of MOS integrated circuits |
US4441931A (en) * | 1981-10-28 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Method of making self-aligned guard regions for semiconductor device elements |
US4525919A (en) * | 1982-06-16 | 1985-07-02 | Raytheon Company | Forming sub-micron electrodes by oblique deposition |
FR2558647B1 (fr) * | 1984-01-23 | 1986-05-09 | Labo Electronique Physique | Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor |
US4618510A (en) * | 1984-09-05 | 1986-10-21 | Hewlett Packard Company | Pre-passivated sub-micrometer gate electrodes for MESFET devices |
KR970000538B1 (ko) * | 1993-04-27 | 1997-01-13 | 엘지전자 주식회사 | 게이트 리세스 구조를 갖는 전계효과트랜지스터의 제조방법 |
RU2484550C1 (ru) * | 2011-11-09 | 2013-06-10 | Открытое акционерное общество "ОКБ-Планета" (ОАО "ОКБ-Планета") | Способ стабилизации электрических параметров полупроводниковых приборов, загерметизированных в пластмассу |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3490943A (en) * | 1964-04-21 | 1970-01-20 | Philips Corp | Method of forming juxtaposed metal layers separated by a narrow gap on a substrate and objects manufactured by the use of such methods |
US3675313A (en) * | 1970-10-01 | 1972-07-11 | Westinghouse Electric Corp | Process for producing self aligned gate field effect transistor |
US3678573A (en) * | 1970-03-10 | 1972-07-25 | Westinghouse Electric Corp | Self-aligned gate field effect transistor and method of preparing |
US3716429A (en) * | 1970-06-18 | 1973-02-13 | Rca Corp | Method of making semiconductor devices |
US3752702A (en) * | 1968-10-04 | 1973-08-14 | M Iizuka | Method of making a schottky barrier device |
US3764865A (en) * | 1970-03-17 | 1973-10-09 | Rca Corp | Semiconductor devices having closely spaced contacts |
US3769109A (en) * | 1972-04-19 | 1973-10-30 | Bell Telephone Labor Inc | PRODUCTION OF SiO{11 {11 TAPERED FILMS |
-
1972
- 1972-12-18 US US316014A patent/US3920861A/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3490943A (en) * | 1964-04-21 | 1970-01-20 | Philips Corp | Method of forming juxtaposed metal layers separated by a narrow gap on a substrate and objects manufactured by the use of such methods |
US3752702A (en) * | 1968-10-04 | 1973-08-14 | M Iizuka | Method of making a schottky barrier device |
US3678573A (en) * | 1970-03-10 | 1972-07-25 | Westinghouse Electric Corp | Self-aligned gate field effect transistor and method of preparing |
US3764865A (en) * | 1970-03-17 | 1973-10-09 | Rca Corp | Semiconductor devices having closely spaced contacts |
US3716429A (en) * | 1970-06-18 | 1973-02-13 | Rca Corp | Method of making semiconductor devices |
US3675313A (en) * | 1970-10-01 | 1972-07-11 | Westinghouse Electric Corp | Process for producing self aligned gate field effect transistor |
US3769109A (en) * | 1972-04-19 | 1973-10-30 | Bell Telephone Labor Inc | PRODUCTION OF SiO{11 {11 TAPERED FILMS |
Also Published As
Publication number | Publication date |
---|---|
US3920861A (en) | 1975-11-18 |