Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
• • C—CHEMISTRY; METALLURGY
  • C07—ORGANIC CHEMISTRY
  • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
  • C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
  • C07C61/16—Unsaturated compounds
  • C07C61/28—Unsaturated compounds polycyclic
  • C07C61/29—Unsaturated compounds polycyclic having a carboxyl group bound to a condensed ring system
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
  • G03F7/0285—Silver salts, e.g. a latent silver salt image
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
  • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
  • G03F7/0295—Photolytic halogen compounds
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
  • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/38—Treatment before imagewise removal, e.g. prebaking
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
  • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
  • H01L21/0274—Photolithographic processes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
  • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
  • H01L21/0274—Photolithographic processes
  • H01L21/0275—Photolithographic processes using lasers
• • C07C2103/90—
• • C—CHEMISTRY; METALLURGY
  • C07—ORGANIC CHEMISTRY
  • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
  • C07C2603/00—Systems containing at least three condensed rings
  • C07C2603/56—Ring systems containing bridged rings
  • C07C2603/90—Ring systems containing bridged rings containing more than four rings

Definitions

• the present invention relates to the field of photosensitive materials, and in particular, to a deep-ultraviolet chemically-amplified positive photoresist.
• a chemically amplified resist it is generally consisted of a photoacid generator (PAG) and an acid-sensitive film-forming resin, and during exposure, the photoacid generator is decomposed to generate a strong acid, which catalyzes the decomposing or crosslinking of the acid-sensitive resin, and because a catalyst may be used circularly in the reaction, the efficiency will be very high.
• the 248 nm photoresist is a resist to which the concept of “chemical amplification” is first applied; and usually, a derivative of poly(para-hydroxystyrene) is employed as the film-forming resin, and an aryliodonium salt or an arylsulfonium salt is employed as the photoacid generator.
• the film-forming resin should have a high transparency at 248 nm; poly(para-hydroxystyrene) and the derivatives thereof have a good transparency at 248 nm themselves, but if impurities are contained in the polymer, the transparency of the resin will be lowered greatly, thus this kind of photoresist has a strict requirement on the purity of poly(para-hydroxystyrene), and the manufacturing process is complex.
• One object of the invention is to provide a deep-ultraviolet chemically-amplified positive photoresist with a good sensitivity.
• the deep-ultraviolet chemically-amplified positive photoresist according to the invention comprises a cyclopentenyl pimaric acid, a divinyl ether, a photoacid generator and an organic solvent, wherein the cyclopentenyl pimaric acid is represented by the following formula:
• the divinyl ether is at least one selected from ethylene glycol divinyl ether, propylene glycol divinyl ether, butylene glycol divinyl ether, diethylene glycol divinyl ether, 1,3-di-(ethyleneoxy ethoxy)benzene, 1-methyl-1,2-diethyleneoxy ethane and 1,7-di-(ethyleneoxy ethoxy)naphthalene, and more preferably, the divinyl ether is ethylene glycol divinyl ether, propylene glycol divinyl ether, diethylene glycol divinyl or, 1,3-di-(ethyleneoxy ethoxy)benzene.
• the photoacid generator is at least one selected from triphenylsulfonium trifluoromethanesulphonate, S-(2-naphthoyl)methyltetrahydrothiophenium trifluoromethanesulphonate, tri(4-methylphenyl)sulfonium trifluoromethanesulphonate, heptafluoropropane sulphonate, (4-methylphenyl)diphenyl trifluoromethanesulphonate, (p-tert-butylphenyl)diphenylsulfonium trifluoromethanesulphonate and tri(p-tert-butylphenyl)sulfonium trifluoromethanesulphonate, and more preferably, the photoacid generator is triphenylsulfonium trifluoromethanesulphonate.
• the organic solvent is at least one selected from acetone, methylethylketone, cyclohexanone, ethylene glycol monoethyl ether, ethylene glycol monoacetate, diethylene glycol, propylene glycol, propylene glycol monoacetate, methyl lactate, propylene glycol methyl ether acetate and ethylene glycol methyl ether acetate.
• the mole ratio of the cyclopentenyl pimaric acid to the divinyl ether is in the range of from about 5:4 to about 1:2, and more preferably, in the range of from about 1:1 to about 2:3.
• the photoacid generator is in the range of from about 0.5% to about 5% by mass of the total mass of the cyclopentenyl pimaric acid and the divinyl ether, and more preferably, in the range of from about 1.0% to about 3.0%.
• the total mass of the photoacid generator, the cyclopentenyl pimaric acid and the divinyl ether is in the range of from about 10% to about 35% by mass of the organic solvent, and more preferably, in the range of from about 10% to about 30%.
• the cyclopentenyl pimaric acid is prepared according to the process which comprises the following steps:
• the detergent is at least one selected from the group consisting of carbon tetrachloride, trichloromethane, acetone, cyclohexanone and ether.
• Another object of the invention is to provide a cyclopentenyl pimaric acid.
• the softening temperature of the cyclopentenyl pimaric acid is in the range of from about 130° C. to about 132° C., and the acid number is about 295 mg KOH/g.
• a diacid with a large alicyclic ring structure i.e., cyclopentenyl pimaric acid
• D-A Diels-Alder
• a deep-ultraviolet chemically-amplified positive photoresist can consist of the cyclopentenyl pimaric acid according to the invention, the divinyl ether and the photoacid generator.
• the deep-ultraviolet chemically-amplified positive photoresist has a good sensitivity.
• a gum resin is added to a four-necked flask equipped with a stirring unit and a condensing unit and heated to a temperature of from about 210 to about 250° C. while a nitrogen gas is introduced into the four-necked flask. Then cyclopentenecarboxylic acid is added dropwise slowly, and the adding time is controlled in the range of from about 2 hours to about 5 hours. After adding of cyclopentenecarboxylic acid is completed, the mixture is continued to react at the temperature of from about 210° C. to about 250° C. for about 3-5 hours. A crude product of cyclopentenyl pimaric acid is obtained after cooling down and discharging from the flask.
• the product is washed for one or more times with a detergent, and preferably, the detergent is at least one selected from the group consisting of carbon tetrachloride, trichloromethane, acetone, cyclohexanone and ether, and then a final product, i.e., cyclopentenyl pimaric acid, is obtained.
• a detergent is at least one selected from the group consisting of carbon tetrachloride, trichloromethane, acetone, cyclohexanone and ether, and then a final product, i.e., cyclopentenyl pimaric acid, is obtained.
• the softening temperature is in the range of from about 130° C. to about 132° C.
• the acid number is about 295 mg KOH/g.
• the content of the target product measured by High Performance Liquid Chromatography (HPLC) is about 75% by mass.
• cyclopentenyl pimaric acid may react with divinyl ether under a heated condition (above 80° C.)., and the resultant product is indissoluble in the dilute alkaline solution.
• the product thus produced may be decomposed rapidly at a temperature higher than 100° C. under the catalysis of a strong acid generated by a photoacid generator, so that it becomes dissoluble in the dilute alkaline solution.
• a positive photoresist can be made of the diacid, the divinyl ether and the acid generator.
• Ethylene glycol divinyl ether (EGDE), propylene glycol divinyl ether (PGDE), butylene glycol divinyl ether (BGDE), diethylene glycol divinyl ether (DEGDE), 1,3-di-(ethyleneoxy ethoxy)benzene (1,3-DEEB), 1-methyl-1,2-diethyleneoxy ethane (1-M-1,2-DE) and 1,7-di-(ethyleneoxy ethoxy)naphthalene (1,7-DEN), etc.
• the above divinyl ethers may be used singly or in a combination of two or more.
• Optional Photoacid Generator Any substance, which is typically used in the traditional chemically-amplified photoresist as an acid generator, may be used as the acid generator in the present invention, and preferred acid generators comprise triphenylsulfonium trifluoromethanesulphonate, S-(2-naphthoyl)methyltetrahydrothiophenium trifluoromethanesulphonate, tri(4-methylphenyl)sulfonium trifluoromethanesulphonate, heptafluoropropane sulphonate, (4-methylphenyl)diphenyl trifluoromethanesulphonate, (p-tert-butylphenyl)diphenylsulfonium trifluoromethanesulphonate and tri(p-tert-butylphenyl)sulfonium trifluoromethanesulphonate, etc., and the above acid generators may be used singly or in a combination of two or more.
• the organic solvent may be any solvent in which the components of a photoresist can be dissolved to generate a homogeneous solution.
• the preferred solvents comprise acetone, methylethylketone (MEK), cyclohexanone (CH), ethylene glycol monoethyl ether (EGME), ethylene glycol monoacetate (EGMA), diethylene glyol (DEG), propylene glycol (PG), propylene glycol monoacetate (PGMA), methyl lactate (ML), propylene glycol methyl ether acetate (PGMEA) and ethylene glycol methyl ether acetate (EGMEA), etc., and the above solvents may be used singly or in a combination of two or more.
• MEK methylethylketone
• CH cyclohexanone
• EGME ethylene glycol monoethyl ether
• EGMA ethylene glycol monoacetate
• DEG diethylene glyol
• PG propylene
• a positive photoresist will be prepared according to the composition listed in the table 1 below.
• the conventional photoetching steps are carried out as follows, wherein the cyclopentenyl pimaric acid used in examples 1-8 is obtained in the synthesization example 1, the cyclopentenyl pimaric acid used in examples 9-11 is obtained in the synthesization example 2, and the cyclopentenyl pimaric acid used in examples 12-13 is obtained in the synthesization example 3:
• a photoresist is coated on a substrate, for example, a silicon wafer, via a spin coater to form a photoresist layer, and then it is prebaked at 60° C. for 90 seconds;
• the photoresist is exposed under a mask plate with a preset pattern, and it is post-baked at 100° C. for 2 minutes after being exposed on the deep-ultraviolet of 248 nm.
• the photoresist coating layer exposed is developed, and a 0.38 wt % tetramethyl ammonium hydroxide is used as the liquid developer, the temperature of the liquid developer is 25° C., and the developing time is 60 seconds.
• the dosages of the cyclopentenyl pimaric acid and the divinyl ether are represented by mass. After being calculated, the mole ratios thereof all fall into the range of 5:4-1:2, and even the preferable range 1:1-2:3.
• the sensitivity of the positive photoresist according to the invention is in the range of from about 18 to about 42 mJ/cm ⁇ 2 , which exhibits a good sensitivity. Therefore, it can be appreciated that the positive photoresist according to the present invention has a good transparency in the deep-ultraviolet band.

Landscapes

• Physics & Mathematics (AREA)
• Spectroscopy & Molecular Physics (AREA)
• General Physics & Mathematics (AREA)
• Chemical & Material Sciences (AREA)
• Organic Chemistry (AREA)
• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Manufacturing & Machinery (AREA)
• Inorganic Chemistry (AREA)
• Optics & Photonics (AREA)
• Materials For Photolithography (AREA)
• Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
• Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
• Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Applications Claiming Priority (3)

Publications (2)

Family

ID=47643935

Family Applications (1)

Country Status (5)

Cited By (1)

Citations (7)

Family Cites Families (5)

• 2012
  • 2012-10-31 CN CN201210429479.1A patent/CN102929102B/zh active Active
• 2013
  • 2013-10-28 EP EP13190478.1A patent/EP2728408B1/en active Active
  • 2013-10-30 US US14/067,186 patent/US9023590B2/en active Active
  • 2013-10-31 KR KR1020130131087A patent/KR101564808B1/ko active IP Right Grant
  • 2013-10-31 JP JP2013227035A patent/JP6169478B2/ja active Active

Patent Citations (7)

Non-Patent Citations (5)

Also Published As

Similar Documents

Legal Events