US7304776B2 - Integrated optical structures with electrically conductive parts - Google Patents
Integrated optical structures with electrically conductive parts Download PDFInfo
- Publication number
- US7304776B2 US7304776B2 US10/478,005 US47800504A US7304776B2 US 7304776 B2 US7304776 B2 US 7304776B2 US 47800504 A US47800504 A US 47800504A US 7304776 B2 US7304776 B2 US 7304776B2
- Authority
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- United States
- Prior art keywords
- electrodes
- dielectric layers
- cavity
- integrated optical
- optical structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime, expires
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 58
- 238000000576 coating method Methods 0.000 claims description 6
- 230000010354 integration Effects 0.000 abstract description 16
- 239000004020 conductor Substances 0.000 abstract description 9
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
Definitions
- the present invention relates to the field of integrated optical structures.
- an integrated optical structure comprises a multiplicity of parts made of dielectrics, these being stacked in levels of integration and defining integrated optical microguides for the transmission, conversion or treatment of light waves.
- Certain integrated optical structures furthermore have metallic surface regions that are connected via metal wires, constituting wire bridges, to an electrical control or supply source. This is in particular the case in integrated optical structures that include actuators composed of combs lying in a cavity and having tines lying along and at a certain distance from fixed surfaces, said metallic regions extending along the lateral faces of the tines and along the fixed surfaces so as to constitute comb displacement electrodes.
- the object of the present invention is to improve integrated optical structures so as to facilitate and improve the electrical connections of functional parts of such structures that require a power supply.
- the integrated optical structure according to the invention comprises a multiplicity of parts made of at least one dielectric, that are stacked in levels of integration and define at least one optical microguide.
- this structure furthermore includes at least one conducting integrated part made of an electrically conducting material, that is interposed or inserted between at least two of said dielectric parts, and at least one connection part made of an electrically conducting material, externally accessible to said dielectric parts for the purpose of making at least one external electrical connection to this conducting integrated part.
- the integrated structure according to the invention comprises at least two groups of electrically conducting regions produced in one level of integration.
- At least one conducting integrated part includes at least one main part lying in a different level of integration from that of said groups and crossing at least one conducting region of one of said groups and secondary parts lying perpendicular to the planes of integration and connecting this main part and the conducting regions of the other group.
- At least two conducting integrated parts may advantageously comprise at least one main part lying in at least one level of integration and secondary parts, respectively, which connect their main parts and the metal regions of said groups, respectively.
- At least one of said upper conducting regions preferably includes at least one part constituting an electrode.
- the integrated structure according to the invention may advantageously include a moveable member provided with at least one electrode located opposite, and at a certain distance from and electrically coupled to, said part, constituting an electrode so as to form an optical actuator.
- said moveable member may advantageously carry at least one optical microguide.
- At least one conducting integrated part preferably includes at least one main part lying in one level of integration and, at least at one point in this main part, a secondary part lying perpendicular to the planes of integration and passing through at least one dielectric part adjacent to this point.
- At least one secondary part preferably constitutes an external electrical connection part.
- At least two conducting integrated parts preferably include main parts lying in different levels of integration.
- said conducting integrated parts preferably include main parts that intersect at a point and at least one secondary part lying perpendicular to the planes of integration and passing through the dielectric part or parts separating said main parts at this point so as to connect these main parts.
- At least one conducting integrated part preferably includes at least one integrated main part constituting an electrical resistor lying along and in the vicinity of one part of an integrated microguide and secondary parts that are externally accessible, for the purpose of making an external electrical connection to this main part.
- said electrical resistor is preferably a resistance heating element.
- said electrical resistor may advantageously be a temperature measurement resistor.
- At least one conducting integrated part may advantageously include at least one integrated main part constituting an electrical resistor lying along and in the vicinity of one part of an integrated microguide and secondary parts that are externally accessible, for the purpose of making an external electrical connection to this main part.
- said electrical resistor may be a resistance heating element.
- said electrical resistor may be a temperature measurement resistor.
- FIGS. 1 to 6 show, in section, an integrated optical structure according to the present invention, in its successive fabrication steps
- FIG. 7 shows a top view of another integrated optical structure according to the present invention.
- FIG. 8 shows a cross section on VIII-VIII of the integrated optical structure of FIG. 7 ;
- FIG. 9 shows a cross section on IX-IX of the integrated optical structure of FIG. 7 ;
- FIG. 10 shows a cross section on X-X of the integrated optical structure of FIG. 7 ;
- FIG. 11 shows a cross section of another integrated optical structure according to the present invention.
- FIG. 12 shows a horizontal section on XII-XII of the integrated optical structure of FIG. 11 ;
- FIG. 13 shows, in section, an alternative embodiment of the integrated optical structure of FIGS. 1 to 6 .
- FIG. 1 shows an integrated optical structure 1 in the course of fabrication, which comprises a support wafer 2 , for example made of silicon, on one face of which a layer 3 made of a dielectric or electrically nonconducting material, for example undoped silica, is deposited.
- a support wafer 2 for example made of silicon
- a layer 3 made of a dielectric or electrically nonconducting material, for example undoped silica, is deposited.
- a layer 4 made of an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride or tungsten, is deposited.
- an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride or tungsten.
- one or more conducting tracks or regions 5 are then produced, using a photolithography and etching process, by removing the material of the layer external to these regions 5 .
- FIG. 2 shows how the process continues with the deposition of a layer 6 of a dielectric or electrically nonconducting material, for example doped silica, silicon nitride or silicon oxynitride.
- the layer 6 is such that the conducting tracks or regions 5 produced above are covered.
- a layer 7 made of an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride or tungsten, is deposited.
- One or more conducting tracks or regions 8 are then produced using a photolithography and etching process, by removal of the material of the layer 7 external to these regions 8 .
- an optical wave transmission core 9 a of square or rectangular cross section is then produced in the dielectric layer 6 using a photolithography and etching process, by removal of the material of this layer 6 on either side of this core, this operation being carried out in such a way that the transmission core 9 a has a predetermined design or path.
- the nonconducting tracks or regions 5 and 8 are preferably arranged so as to be located laterally to and at a certain distance from the transmission core 9 a to be obtained.
- the transmission core 9 a and the layers 3 and 10 that surround it define an integrated optical microguide 9 .
- holes or wells 11 passing through the dielectric layers 6 and 10 and emerging at points located above the conducting tracks or regions 5
- holes or wells 12 passing through the layer 10 and emerging at points located above the conducting regions or tracks 8 , are produced, for example using a photolithography and etching process.
- a layer 13 made of an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride, tungsten or aluminum, is deposited, this material filling the holes or wells 11 and 12 so as to constitute interconnect vias 11 a and 12 a.
- an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride, tungsten or aluminum
- upper conducting regions 14 are produced by removal of the material of the layer 13 external to these regions, these conducting regions 14 lying respectively above at least one of the holes or wells 11 and 12 produced beforehand and filled by the interconnect vias 11 a and 12 a.
- the integrated optical structure 1 as shown in definitive form in FIG. 6 , comprises electrically conducting integrated parts 15 that have main parts consisting of the conducting tracks or regions 5 produced in the plane of integration subjacent to the transmission core 9 a and secondary parts consisting of the interconnect vias 11 a formed perpendicularly to this plane of integration, respectively, and electrically conducting integrated parts 16 that have main parts consisting of the conducting tracks or regions 8 produced in the plane of integration subjacent to the upper layer 10 and secondary parts consisting of the interconnect vias 12 a formed perpendicular to this plane of integration, respectively.
- the interconnect vias 11 a and 12 a are accessible externally to the structure 1 , the upper conducting regions being produced so as to make it easier for external electrical connections to the integrated conducting parts 15 and 16 and/or so as to produce, according to predetermined requirements, selective electrical interconnects between these integrated conducting parts.
- the integrated optical structure 1 is such that the conducting integrated parts 15 and 16 are placed a sufficient distance from the transmission core 9 a of the optical microguide 9 so as not to disturb the propagation of the optical wave in this transmission core 9 a.
- the conducting regions or tracks 5 and 7 could be formed in trenches provided in the dielectric layers 3 and 6 after chemical-mechanical polishing of the conducting layers 4 and 7 that fill these trenches.
- FIGS. 7 to 10 an integrated optical structure 100 will now be described that implements in one particular way the arrangements described with reference to FIGS. 1 to 6 .
- the optical structure 100 comprises, as in the previous example, a support wafer 101 corresponding to the support wafer 2 and, in succession, three layers 102 , 103 and 104 corresponding to the layers 3 , 6 and 10 .
- the structure 100 has a cavity 105 hollowed out through the layers 102 , 103 and 104 and into the support wafer 101 , said cavity having two parallel walls 105 a and 105 b , an end wall 105 c and a bottom 105 d.
- the cavity 105 is produced so as to form an actuator 106 that comprises a moveable member 107 free underneath and having a main branch 108 , that extends parallel to the walls 105 a and 105 b , and, on each side of this main branch 108 , spaced-apart transverse secondary branches 109 and 110 , and also fixed parts 111 and 112 that project from the walls 105 a and 105 b , and the sidewalls or lateral faces of which lie parallel to and a certain distance from the sidewalls or lateral faces of the secondary branches 109 of the moveable member 107 .
- the upper face of the moveable member 107 and the sidewalls or lateral faces of its secondary branches 109 and 110 are covered with a coating of an electrically conducting material 113 so as to constitute electrodes.
- the opposed sidewalls or lateral faces of the fixed parts 111 and 112 and the upper face of these projecting parts 111 and 112 are provided with coatings 114 and 115 made of an electrically conducting material respectively, these being electrically isolated from each other so as to constitute independent electrodes. These coatings 114 and 115 extend beyond the projecting parts 111 and 112 on the upper face of the layer 104 so as to constitute independent electrically conducting upper regions 116 and 117 .
- the upper face of the layer 104 furthermore carries coatings 118 and 119 made of a conducting material which run along at a certain distance from the end wall 105 c of the cavity 105 .
- the optical structure 10 includes, on either side of and at a certain distance from the cavity 105 , the integrated conducting parts 120 and 121 that correspond to the integrated conducting parts 15 and 16 of the example described with reference to FIG. 6 .
- the integrated conducting parts 120 comprise integrated main parts or tracks 122 and interconnect vias 123 that are formed below the upper conducting regions 116 and the upper conducting region 118 , respectively. Thus, all the corresponding electrodes 114 are electrically connected together.
- the integrated conducting parts 121 comprise integrated main parts or tracks 124 and interconnect vias 125 that are formed below the upper conducting regions 116 and the upper conducting region 118 , respectively. Thus, all the corresponding electrodes 115 are electrically connected together.
- the moveable member 107 of the actuator 106 can be displaced parallel to its main branch 108 in one direction or the other.
- the moveable member 107 of the actuator 106 may be connected to a beam or to an optical switching platform carrying one or more optical microguides as described in patents FR-A-90/03902 and FR-A-95/00201.
- FIGS. 11 and 12 show an integrated optical structure 200 that comprises a Mach-Zehnder interferometer 201 formed by an input microguide 202 , an output microguide 203 and two microguides 204 and 205 that connect the microguides 202 and 203 in parallel.
- a Mach-Zehnder interferometer 201 formed by an input microguide 202 , an output microguide 203 and two microguides 204 and 205 that connect the microguides 202 and 203 in parallel.
- the optical structure 200 furthermore includes an electrically conducting integrated part 206 produced like the integrated conducting part 15 described with reference to FIG. 6 .
- This integrated conducting part 206 comprises a main part 207 , that is produced in the plane of integration of the aforementioned optical microguides and lies along and a short distance from the optical microguide 205 , and two interconnect vias 208 and 209 for electrically connecting the ends of the conducting main part 207 to an external power supply.
- the main part 207 of the integrated conducting part 206 may then form a resistance heating element capable of varying, by thermal conduction, the temperature of the optical microguide 205 in such a way that the Mach-Zehnder interferometer 201 can form an optical switch, an optical attenuator or an optical interrupter.
- the main part 207 of the integrated conducting part 206 could be used for the purpose of measuring the temperature of the structure in its environment.
- FIG. 13 shows an integrated optical structure 300 that differs from the integrated optical structure 1 described with reference to FIGS. 1 to 6 by the fact that, before the conducting layer 7 is deposited on the dielectric layer 6 at least one hole 301 is made in this dielectric layer 6 above at least one conducting track or region 5 .
- the material of which it is composed fills the hole 301 and constitutes an interconnect via 301 a.
- a track or region 8 is produced above the hole 301 and is electrically connected to the track or region 5 beneath the interconnect via 301 a.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Optical Integrated Circuits (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0106356A FR2824920B1 (en) | 2001-05-15 | 2001-05-15 | INTEGRATED OPTICAL STRUCTURE WITH ELECTRICALLY CONDUCTIVE PARTS |
FR0106356 | 2001-05-15 | ||
PCT/FR2002/001604 WO2002093199A2 (en) | 2001-05-15 | 2002-05-14 | Integrated optical structures with electrically conductive parts |
Publications (2)
Publication Number | Publication Date |
---|---|
US20040232521A1 US20040232521A1 (en) | 2004-11-25 |
US7304776B2 true US7304776B2 (en) | 2007-12-04 |
Family
ID=8863270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/478,005 Expired - Lifetime US7304776B2 (en) | 2001-05-15 | 2002-05-14 | Integrated optical structures with electrically conductive parts |
Country Status (5)
Country | Link |
---|---|
US (1) | US7304776B2 (en) |
AU (1) | AU2002304471A1 (en) |
DE (1) | DE10296813B4 (en) |
FR (1) | FR2824920B1 (en) |
WO (1) | WO2002093199A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014023804A2 (en) * | 2012-08-08 | 2014-02-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Directional coupler and optical waveguide |
US9588291B2 (en) | 2013-12-31 | 2017-03-07 | Medlumics, S.L. | Structure for optical waveguide and contact wire intersection |
US9647419B2 (en) | 2014-04-16 | 2017-05-09 | Apple Inc. | Active silicon optical bench |
US10197818B2 (en) * | 2016-10-24 | 2019-02-05 | Electronics & Telecommunications Research Institute | Thermo-optic optical switch |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0709711A1 (en) | 1994-10-25 | 1996-05-01 | Hughes Aircraft Company | Velocity-matched electrodes for electro-optic travelling-wave modulators and method for forming the same |
US5612815A (en) * | 1995-01-10 | 1997-03-18 | Commissariat A L'energie Atomique | Optical device for optomechanical application |
WO1999045416A2 (en) | 1998-03-06 | 1999-09-10 | Telefonaktiebolaget Lm Ericsson (Publ) | Optoelectric multichip module |
WO2000057221A1 (en) | 1999-03-22 | 2000-09-28 | Gemfire Corporation | Optoelectronic and photonic devices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3858205A (en) * | 1972-10-06 | 1974-12-31 | Sperry Rand Corp | Base-band precollision sensor with time domain gating for preventing false responses |
US4150375A (en) * | 1978-03-02 | 1979-04-17 | Sperry Rand Corporation | Interferometric protective system for vehicles |
GB9602250D0 (en) * | 1996-02-05 | 1996-04-03 | Secr Defence | Collision warning system |
US6573859B2 (en) * | 2000-02-07 | 2003-06-03 | Toyota Jidosha Kabushiki Kaisha | Radar apparatus |
DE10005558A1 (en) * | 2000-02-09 | 2001-08-23 | Bosch Gmbh Robert | Vehicle data communications device uses dual channel communications microwave frequencies for intermediate frequency processing by conventional parts |
JP3988571B2 (en) * | 2001-09-17 | 2007-10-10 | 株式会社デンソー | Radar equipment |
US6583753B1 (en) * | 2002-04-03 | 2003-06-24 | Delphi Technologies, Inc. | Vehicle back-up and parking aid radar system |
-
2001
- 2001-05-15 FR FR0106356A patent/FR2824920B1/en not_active Expired - Lifetime
-
2002
- 2002-05-14 US US10/478,005 patent/US7304776B2/en not_active Expired - Lifetime
- 2002-05-14 DE DE10296813.6T patent/DE10296813B4/en not_active Expired - Lifetime
- 2002-05-14 WO PCT/FR2002/001604 patent/WO2002093199A2/en not_active Application Discontinuation
- 2002-05-14 AU AU2002304471A patent/AU2002304471A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0709711A1 (en) | 1994-10-25 | 1996-05-01 | Hughes Aircraft Company | Velocity-matched electrodes for electro-optic travelling-wave modulators and method for forming the same |
US5612815A (en) * | 1995-01-10 | 1997-03-18 | Commissariat A L'energie Atomique | Optical device for optomechanical application |
WO1999045416A2 (en) | 1998-03-06 | 1999-09-10 | Telefonaktiebolaget Lm Ericsson (Publ) | Optoelectric multichip module |
US6343164B1 (en) * | 1998-03-06 | 2002-01-29 | Telefonaktiebolaget Lm Ericsson (Publ) | Optoelectric multichip module |
WO2000057221A1 (en) | 1999-03-22 | 2000-09-28 | Gemfire Corporation | Optoelectronic and photonic devices |
US6236774B1 (en) * | 1999-03-22 | 2001-05-22 | Gemfire Corporation | Optoelectronic and photonic devices formed of materials which inhibit degradation and failure |
Also Published As
Publication number | Publication date |
---|---|
WO2002093199A3 (en) | 2004-05-06 |
FR2824920A1 (en) | 2002-11-22 |
FR2824920B1 (en) | 2003-10-17 |
AU2002304471A1 (en) | 2002-11-25 |
DE10296813T5 (en) | 2004-04-29 |
DE10296813B4 (en) | 2018-06-14 |
WO2002093199A2 (en) | 2002-11-21 |
US20040232521A1 (en) | 2004-11-25 |
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Legal Events
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AS | Assignment |
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