US20040232521A1 - Integrated optical structures with electrically conductive parts - Google Patents
Integrated optical structures with electrically conductive parts Download PDFInfo
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- US20040232521A1 US20040232521A1 US10/478,005 US47800504A US2004232521A1 US 20040232521 A1 US20040232521 A1 US 20040232521A1 US 47800504 A US47800504 A US 47800504A US 2004232521 A1 US2004232521 A1 US 2004232521A1
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- 230000003287 optical effect Effects 0.000 title claims abstract description 53
- 230000010354 integration Effects 0.000 claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000009529 body temperature measurement Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
Definitions
- the present invention relates to the field of integrated optical structures.
- an integrated optical structure comprises a multiplicity of parts made of dielectrics, these being stacked in levels of integration and defining integrated optical microguides for the transmission, conversion or treatment of light waves.
- Certain integrated optical structures furthermore have metallic surface regions that are connected via metal wires, constituting wire bridges, to an electrical control or supply source. This is in particular the case in integrated optical structures that include actuators composed of combs lying in a cavity and having tines lying along and at a certain distance from fixed surfaces, said metallic regions extending along the lateral faces of the tines and along the fixed surfaces so as to constitute comb displacement electrodes.
- the object of the present invention is to improve integrated optical structures so as to facilitate and improve the electrical connections of functional parts of such structures that require a power supply.
- the integrated optical structure according to the invention comprises a multiplicity of parts made of at least one dielectric, that are stacked in levels of integration and define at least one optical microguide.
- this structure furthermore includes at least one conducting integrated part made of an electrically conducting material, that is interposed or inserted between at least two of said dielectric parts, and at least one connection part made of an electrically conducting material, externally accessible to said dielectric parts for the purpose of making at least one external electrical connection to this conducting integrated part.
- the integrated structure according to the invention comprises at least two groups of electrically conducting regions produced in one level of integration.
- At least one conducting integrated part includes at least one main part lying in a different level of integration from that of said groups and crossing at least one conducting region of one of said groups and secondary parts lying perpendicular to the planes of integration and connecting this main part and the conducting regions of the other group.
- At least two conducting integrated parts may advantageously comprise at least one main part lying in at least one level of integration and secondary parts, respectively, which connect their main parts and the metal regions of said groups, respectively.
- At least one of said upper conducting regions preferably includes at least one part constituting an electrode.
- the integrated structure according to the invention may advantageously include a moveable member provided with at least one electrode located opposite, and at a certain distance from and electrically coupled to, said part, constituting an electrode so as to form an optical actuator.
- said moveable member may advantageously carry at least one optical microguide.
- At least one conducting integrated part preferably includes at least one main part lying in one level of integration and, at least at one point in this main part, a secondary part lying perpendicular to the planes of integration and passing through at least one dielectric part adjacent to this point.
- At least one secondary part preferably constitutes an external electrical connection part.
- At least two conducting integrated parts preferably include main parts lying in different levels of integration.
- said conducting integrated parts preferably include main parts that intersect at a point and at least one secondary part lying perpendicular to the planes of integration and passing through the dielectric part or parts separating said main parts at this point so as to connect these main parts.
- At least one conducting integrated part preferably includes at least one integrated main part constituting an electrical resistor lying along and in the vicinity of one part of an integrated microguide and secondary parts that are externally accessible, for the purpose of making an external electrical connection to this main part.
- said electrical resistor is preferably a resistance heating element.
- said electrical resistor may advantageously be a temperature measurement resistor.
- At least one conducting integrated part may advantageously include at least one integrated main part constituting an electrical resistor lying along and in the vicinity of one part of an integrated microguide and secondary parts that are externally accessible, for the purpose of making an external electrical connection to this main part.
- said electrical resistor may be a resistance heating element.
- said electrical resistor may be a temperature measurement resistor.
- FIGS. 1 to 6 show, in section, an integrated optical structure according to the present invention, in its successive fabrication steps
- FIG. 7 shows a top view of another integrated optical structure according to the present invention.
- FIG. 8 shows a cross section on VIII-VIII of the integrated optical structure of FIG. 7;
- FIG. 9 shows a cross section on IX-IX of the integrated optical structure of FIG. 7;
- FIG. 10 shows a cross section on X-X of the integrated optical structure of FIG. 7;
- FIG. 11 shows a cross section of another integrated optical structure according to the present invention.
- FIG. 12 shows a horizontal section on XII-XII of the integrated optical structure of FIG. 11;
- FIG. 13 shows, in section, an alternative embodiment of the integrated optical structure of FIGS. 1 to 6 .
- FIG. 1 shows an integrated optical structure 1 in the course of fabrication, which comprises a support wafer 2 , for example made of silicon, on one face of which a layer 3 made of a dielectric or electrically nonconducting material, for example undoped silica, is deposited.
- a support wafer 2 for example made of silicon
- a layer 3 made of a dielectric or electrically nonconducting material, for example undoped silica, is deposited.
- a layer 4 made of an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride or tungsten, is deposited.
- an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride or tungsten.
- one or more conducting tracks or regions 5 are then produced, using a photolithography and etching process, by removing the material of the layer external to these regions 5 .
- FIG. 2 shows how the process continues with the deposition of a layer 6 of a dielectric or electrically nonconducting material, for example doped silica, silicon nitride or silicon oxynitride.
- the layer 6 is such that the conducting tracks or regions 5 produced above are covered.
- a layer 7 made of an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride or tungsten, is deposited.
- One or more conducting tracks or regions 8 are then produced using a photolithography and etching process, by removal of the material of the layer 7 external to these regions 8 .
- an optical wave transmission core 9 a of square or rectangular cross section is then produced in the dielectric layer 6 using a photolithography and etching process, by removal of the material of this layer 6 on either side of this core, this operation being carried out in such a way that the transmission core 9 a has a predetermined design or path.
- the nonconducting tracks or regions 5 and 8 are preferably arranged so as to be located laterally to and at a certain distance from the transmission core 9 a to be obtained.
- the transmission core 9 a and the layers 3 and 10 that surround it define an integrated optical microguide 9 .
- holes or wells 11 passing through the dielectric layers 6 and 10 and emerging at points located above the conducting tracks or regions 5
- holes or wells 12 passing through the layer 10 and emerging at points located above the conducting regions or tracks 8 , are produced, for example using a photolithography and etching process.
- a layer 13 made of an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride, tungsten or aluminum, is deposited, this material filling the holes or wells 11 and 12 so as to constitute interconnect vias 11 a and 12 a.
- an electrically conducting material for example polycrystalline silicon, titanium, titanium nitride, tungsten or aluminum
- upper conducting regions 14 are produced by removal of the material of the layer 13 external to these regions, these conducting regions 14 lying respectively above at least one of the holes or wells 11 and 12 produced beforehand and filled by the interconnect vias 11 a and 12 a.
- the integrated optical structure 1 as shown in definitive form in FIG. 6, comprises electrically conducting integrated parts 15 that have main parts consisting of the conducting tracks or regions 5 produced in the plane of integration subjacent to the transmission core 9 a and secondary parts consisting of the interconnect vias 11 a formed perpendicularly to this plane of integration, respectively, and electrically conducting integrated parts 16 that have main parts consisting of the conducting tracks or regions 8 produced in the plane of integration subjacent to the upper layer 10 and secondary parts consisting of the interconnect vias 12 a formed perpendicular to this plane of integration, respectively.
- interconnect vias 11 a and 12 a are accessible externally to the structure 1 , the upper conducting regions being produced so as to make it easier for external electrical connections to the integrated conducting parts 15 and 16 and/or so as to produce, according to predetermined requirements, selective electrical interconnects between these integrated conducting parts.
- the integrated optical structure 1 is such that the conducting integrated parts 15 and 16 are placed a sufficient distance from the transmission core 9 a of the optical microguide 9 so as not to disturb the propagation of the optical wave in this transmission core 9 a.
- the conducting regions or tracks 5 and 7 could be formed in trenches provided in the dielectric layers 3 and 6 after chemical-mechanical polishing of the conducting layers 4 and 7 that fill these trenches.
- FIGS. 7 to 10 an integrated optical structure 100 will now be described that implements in one particular way the arrangements described with reference to FIGS. 1 to 6 .
- the optical structure 100 comprises, as in the previous example, a support wafer 101 corresponding to the support wafer 2 and, in succession, three layers 102 , 103 and 104 corresponding to the layers 3 , 6 and 10 .
- the structure 100 has a cavity 105 hollowed out through the layers 102 , 103 and 104 and into the support wafer 101 , said cavity having two parallel walls 105 a and 105 b , an end wall 105 c and a bottom 105 d.
- the cavity 105 is produced so as to form an actuator 106 that comprises a moveable member 107 free underneath and having a main branch 108 , that extends parallel to the walls 105 a and 105 b , and, on each side of this main branch 108 , spaced-apart transverse secondary branches 109 and 110 , and also fixed parts 111 and 112 that project from the walls 105 a and 105 b , and the sidewalls or lateral faces of which lie parallel to and a certain distance from the sidewalls or lateral faces of the secondary branches 109 of the moveable member 107 .
- the upper face of the moveable member 107 and the sidewalls or lateral faces of its secondary branches 109 and 110 are covered with a coating of an electrically conducting material 113 so as to constitute electrodes.
- the opposed sidewalls or lateral faces of the fixed parts 111 and 112 and the upper face of these projecting parts 111 and 112 are provided with coatings 114 and 115 made of an electrically conducting material respectively, these being electrically isolated from each other so as to constitute independent electrodes. These coatings 114 and 115 extend beyond the projecting parts 111 and 112 on the upper face of the layer 104 so as to constitute independent electrically conducting upper regions 116 and 117 .
- the upper face of the layer 104 furthermore carries coatings 118 and 119 made of a conducting material which run along at a certain distance from the end wall 105 c of the cavity 105 .
- the optical structure 10 includes, on either side of and at a certain distance from the cavity 105 , the integrated conducting parts 120 and 121 that correspond to the integrated conducting parts 15 and 16 of the example described with reference to FIG. 6.
- the integrated conducting parts 120 comprise integrated main parts or tracks 122 and interconnect vias 123 that are formed below the upper conducting regions 116 and the upper conducting region 118 , respectively. Thus, all the corresponding electrodes 114 are electrically connected together.
- the integrated conducting parts 121 comprise integrated main parts or tracks 124 and interconnect vias 125 that are formed below the upper conducting regions 116 and the upper conducting region 118 , respectively. Thus, all the corresponding electrodes 115 are electrically connected together.
- the moveable member 107 of the actuator 106 can be displaced parallel to its main branch 108 in one direction or the other.
- the moveable member 107 of the actuator 106 may be connected to a beam or to an optical switching platform carrying one or more optical microguides as described in patents FR-A-90/03902 and FR-A-95/00201.
- FIGS. 11 and 12 show an integrated optical structure 200 that comprises a Mach-Zehnder interferometer 201 formed by an input microguide 202 , an output microguide 203 and two microguides 204 and 205 that connect the microguides 202 and 203 in parallel.
- a Mach-Zehnder interferometer 201 formed by an input microguide 202 , an output microguide 203 and two microguides 204 and 205 that connect the microguides 202 and 203 in parallel.
- the optical structure 200 furthermore includes an electrically conducting integrated part 206 produced like the integrated conducting part 15 described with reference to FIG. 6.
- This integrated conducting part 206 comprises a main part 207 , that is produced in the plane of integration of the aforementioned optical microguides and lies along and a short distance from the optical microguide 205 , and two interconnect vias 208 and 209 for electrically connecting the ends of the conducting main part 207 to an external power supply.
- the main part 207 of the integrated conducting part 206 may then form a resistance heating element capable of varying, by thermal conduction, the temperature of the optical microguide 205 in such a way that the Mach-Zehnder interferometer 201 can form an optical switch, an optical attenuator or an optical interrupter.
- the main part 207 of the integrated conducting part 206 could be used for the purpose of measuring the temperature of the structure in its environment.
- FIG. 13 shows an integrated optical structure 300 that differs from the integrated optical structure 1 described with reference to FIGS. 1 to 6 by the fact that, before the conducting layer 7 is deposited on the dielectric layer 6 at least one hole 301 is made in this dielectric layer 6 above at least one conducting track or region 5 .
- the conducting layer 7 As the conducting layer 7 is being deposited, the material of which it is composed fills the hole 301 and constitutes an interconnect via 301 a.
- a track or region 8 is produced above the hole 301 and is electrically connected to the track or region 5 beneath the interconnect via 301 a.
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Optical Integrated Circuits (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
- The present invention relates to the field of integrated optical structures.
- In general, an integrated optical structure comprises a multiplicity of parts made of dielectrics, these being stacked in levels of integration and defining integrated optical microguides for the transmission, conversion or treatment of light waves.
- Certain integrated optical structures furthermore have metallic surface regions that are connected via metal wires, constituting wire bridges, to an electrical control or supply source. This is in particular the case in integrated optical structures that include actuators composed of combs lying in a cavity and having tines lying along and at a certain distance from fixed surfaces, said metallic regions extending along the lateral faces of the tines and along the fixed surfaces so as to constitute comb displacement electrodes.
- Such arrangements have the following main drawbacks. The operations of mounting the electrical connection wires are time-consuming and tedious, and must be carried out accurately. These electrical connection wires project from the surface of the optical structures and there is a risk of them touching one another.
- The object of the present invention is to improve integrated optical structures so as to facilitate and improve the electrical connections of functional parts of such structures that require a power supply.
- The integrated optical structure according to the invention comprises a multiplicity of parts made of at least one dielectric, that are stacked in levels of integration and define at least one optical microguide.
- According to the invention, this structure furthermore includes at least one conducting integrated part made of an electrically conducting material, that is interposed or inserted between at least two of said dielectric parts, and at least one connection part made of an electrically conducting material, externally accessible to said dielectric parts for the purpose of making at least one external electrical connection to this conducting integrated part.
- The integrated structure according to the invention comprises at least two groups of electrically conducting regions produced in one level of integration.
- According to the invention, at least one conducting integrated part includes at least one main part lying in a different level of integration from that of said groups and crossing at least one conducting region of one of said groups and secondary parts lying perpendicular to the planes of integration and connecting this main part and the conducting regions of the other group.
- According to the invention, at least two conducting integrated parts may advantageously comprise at least one main part lying in at least one level of integration and secondary parts, respectively, which connect their main parts and the metal regions of said groups, respectively.
- According to the invention, at least one of said upper conducting regions preferably includes at least one part constituting an electrode.
- The integrated structure according to the invention may advantageously include a moveable member provided with at least one electrode located opposite, and at a certain distance from and electrically coupled to, said part, constituting an electrode so as to form an optical actuator.
- According to the invention, said moveable member may advantageously carry at least one optical microguide.
- According to the invention, at least one conducting integrated part preferably includes at least one main part lying in one level of integration and, at least at one point in this main part, a secondary part lying perpendicular to the planes of integration and passing through at least one dielectric part adjacent to this point.
- According to the invention, at least one secondary part preferably constitutes an external electrical connection part.
- According to the invention, at least two conducting integrated parts preferably include main parts lying in different levels of integration.
- According to the invention, said conducting integrated parts preferably include main parts that intersect at a point and at least one secondary part lying perpendicular to the planes of integration and passing through the dielectric part or parts separating said main parts at this point so as to connect these main parts.
- According to the invention, at least one conducting integrated part preferably includes at least one integrated main part constituting an electrical resistor lying along and in the vicinity of one part of an integrated microguide and secondary parts that are externally accessible, for the purpose of making an external electrical connection to this main part.
- According to the invention, said electrical resistor is preferably a resistance heating element.
- According to the invention, said electrical resistor may advantageously be a temperature measurement resistor.
- According to another embodiment of the invention, at least one conducting integrated part may advantageously include at least one integrated main part constituting an electrical resistor lying along and in the vicinity of one part of an integrated microguide and secondary parts that are externally accessible, for the purpose of making an external electrical connection to this main part.
- According to the invention, said electrical resistor may be a resistance heating element.
- According to the invention, said electrical resistor may be a temperature measurement resistor.
- The present invention will be more clearly understood on examining integrated optical structures that are described by way of non-limiting examples and illustrated by the drawing in which:
- FIGS.1 to 6 show, in section, an integrated optical structure according to the present invention, in its successive fabrication steps;
- FIG. 7 shows a top view of another integrated optical structure according to the present invention;
- FIG. 8 shows a cross section on VIII-VIII of the integrated optical structure of FIG. 7;
- FIG. 9 shows a cross section on IX-IX of the integrated optical structure of FIG. 7;
- FIG. 10 shows a cross section on X-X of the integrated optical structure of FIG. 7;
- FIG. 11 shows a cross section of another integrated optical structure according to the present invention;
- FIG. 12 shows a horizontal section on XII-XII of the integrated optical structure of FIG. 11; and
- FIG. 13 shows, in section, an alternative embodiment of the integrated optical structure of FIGS.1 to 6.
- FIG. 1 shows an integrated optical structure1 in the course of fabrication, which comprises a
support wafer 2, for example made of silicon, on one face of which alayer 3 made of a dielectric or electrically nonconducting material, for example undoped silica, is deposited. - Next, a
layer 4 made of an electrically conducting material, for example polycrystalline silicon, titanium, titanium nitride or tungsten, is deposited. Depending on predetermined requirements, one or more conducting tracks orregions 5 are then produced, using a photolithography and etching process, by removing the material of the layer external to theseregions 5. - FIG. 2 shows how the process continues with the deposition of a
layer 6 of a dielectric or electrically nonconducting material, for example doped silica, silicon nitride or silicon oxynitride. Thelayer 6 is such that the conducting tracks orregions 5 produced above are covered. - After optional planarization of the surface of the
layer 6, alayer 7 made of an electrically conducting material, for example polycrystalline silicon, titanium, titanium nitride or tungsten, is deposited. - One or more conducting tracks or
regions 8 are then produced using a photolithography and etching process, by removal of the material of thelayer 7 external to theseregions 8. - Referring to FIG. 3, an optical
wave transmission core 9 a of square or rectangular cross section is then produced in thedielectric layer 6 using a photolithography and etching process, by removal of the material of thislayer 6 on either side of this core, this operation being carried out in such a way that thetransmission core 9 a has a predetermined design or path. - Of course, during the design of the optical structure1, the nonconducting tracks or
regions transmission core 9 a to be obtained. - Next, as shown in FIG. 4, a
layer 10 of a dielectric or electrically nonconducting material, for example undoped silica, is deposited. Thislayer 10 fills the spaces left on either side of thetransmission core 9 a produced in thelayer 6 and covers the conducting regions ortracks 8. - As a result, the
transmission core 9 a and thelayers optical microguide 9. - Next, as shown in FIG. 5, holes or
wells 11, passing through thedielectric layers regions 5, and holes orwells 12, passing through thelayer 10 and emerging at points located above the conducting regions ortracks 8, are produced, for example using a photolithography and etching process. - Finally, as shown in FIG. 6, a
layer 13 made of an electrically conducting material, for example polycrystalline silicon, titanium, titanium nitride, tungsten or aluminum, is deposited, this material filling the holes orwells interconnect vias - Next, using a photolithography and etching process, upper conducting
regions 14 are produced by removal of the material of thelayer 13 external to these regions, these conductingregions 14 lying respectively above at least one of the holes orwells interconnect vias - As a result of the foregoing operations, the integrated optical structure1, as shown in definitive form in FIG. 6, comprises electrically conducting integrated
parts 15 that have main parts consisting of the conducting tracks orregions 5 produced in the plane of integration subjacent to thetransmission core 9 a and secondary parts consisting of theinterconnect vias 11 a formed perpendicularly to this plane of integration, respectively, and electrically conducting integratedparts 16 that have main parts consisting of the conducting tracks orregions 8 produced in the plane of integration subjacent to theupper layer 10 and secondary parts consisting of theinterconnect vias 12 a formed perpendicular to this plane of integration, respectively. - The
interconnect vias parts - In the example shown in FIG. 6, the integrated optical structure1 is such that the conducting integrated
parts transmission core 9 a of theoptical microguide 9 so as not to disturb the propagation of the optical wave in thistransmission core 9 a. - In an alternative embodiment, the conducting regions or
tracks dielectric layers layers - Referring to FIGS.7 to 10, an integrated
optical structure 100 will now be described that implements in one particular way the arrangements described with reference to FIGS. 1 to 6. - The
optical structure 100 comprises, as in the previous example, asupport wafer 101 corresponding to thesupport wafer 2 and, in succession, threelayers layers - The
structure 100 has acavity 105 hollowed out through thelayers support wafer 101, said cavity having twoparallel walls end wall 105 c and abottom 105 d. - The
cavity 105 is produced so as to form anactuator 106 that comprises amoveable member 107 free underneath and having amain branch 108, that extends parallel to thewalls main branch 108, spaced-apart transversesecondary branches parts walls secondary branches 109 of themoveable member 107. - The upper face of the
moveable member 107 and the sidewalls or lateral faces of itssecondary branches material 113 so as to constitute electrodes. - The opposed sidewalls or lateral faces of the
fixed parts parts coatings coatings parts layer 104 so as to constitute independent electrically conductingupper regions - The upper face of the
layer 104 furthermore carriescoatings end wall 105 c of thecavity 105. - The
optical structure 10 includes, on either side of and at a certain distance from thecavity 105, the integrated conductingparts parts - As shown in FIG. 9, the integrated conducting
parts 120 comprise integrated main parts ortracks 122 and interconnectvias 123 that are formed below the upper conductingregions 116 and the upper conductingregion 118, respectively. Thus, all thecorresponding electrodes 114 are electrically connected together. - Likewise, as shown in FIG. 10, the integrated conducting
parts 121 comprise integrated main parts ortracks 124 andinterconnect vias 125 that are formed below theupper conducting regions 116 and theupper conducting region 118, respectively. Thus, all thecorresponding electrodes 115 are electrically connected together. - It is then possible to connect all the
electrodes 114 and all theelectrodes 115 to a power supply solely by two electrically conductingwires upper conducting regions upper conducting regions - By supplying power to the
electrodes 113 of themoveable member 107 via electrical connection means (not shown) such as an electrical wire and by supplying power selectively to theelectrodes 113, by means of theelectrical wires 127 and 128, themoveable member 107 of theactuator 106 can be displaced parallel to itsmain branch 108 in one direction or the other. - In one example, the
moveable member 107 of theactuator 106 may be connected to a beam or to an optical switching platform carrying one or more optical microguides as described in patents FR-A-90/03902 and FR-A-95/00201. - FIGS. 11 and 12 show an integrated
optical structure 200 that comprises a Mach-Zehnder interferometer 201 formed by aninput microguide 202, anoutput microguide 203 and twomicroguides microguides - The
optical structure 200 furthermore includes an electrically conductingintegrated part 206 produced like the integrated conductingpart 15 described with reference to FIG. 6. - This integrated conducting
part 206 comprises amain part 207, that is produced in the plane of integration of the aforementioned optical microguides and lies along and a short distance from theoptical microguide 205, and twointerconnect vias main part 207 to an external power supply. - The
main part 207 of the integrated conductingpart 206 may then form a resistance heating element capable of varying, by thermal conduction, the temperature of theoptical microguide 205 in such a way that the Mach-Zehnder interferometer 201 can form an optical switch, an optical attenuator or an optical interrupter. - According to another embodiment, the
main part 207 of the integrated conductingpart 206 could be used for the purpose of measuring the temperature of the structure in its environment. - FIG. 13 shows an integrated
optical structure 300 that differs from the integrated optical structure 1 described with reference to FIGS. 1 to 6 by the fact that, before theconducting layer 7 is deposited on thedielectric layer 6 at least onehole 301 is made in thisdielectric layer 6 above at least one conducting track orregion 5. - As the
conducting layer 7 is being deposited, the material of which it is composed fills thehole 301 and constitutes an interconnect via 301 a. - During the step of etching the
conducting layer 7, a track orregion 8 is produced above thehole 301 and is electrically connected to the track orregion 5 beneath the interconnect via 301 a. - Thus, electrical connections between levels may be produced.
- The present invention is not limited to the examples described above. Many alternative embodiments are possible without departing from the scope defined by the appended claims.
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0106356A FR2824920B1 (en) | 2001-05-15 | 2001-05-15 | INTEGRATED OPTICAL STRUCTURE WITH ELECTRICALLY CONDUCTIVE PARTS |
FR0106356 | 2001-05-15 | ||
PCT/FR2002/001604 WO2002093199A2 (en) | 2001-05-15 | 2002-05-14 | Integrated optical structures with electrically conductive parts |
Publications (2)
Publication Number | Publication Date |
---|---|
US20040232521A1 true US20040232521A1 (en) | 2004-11-25 |
US7304776B2 US7304776B2 (en) | 2007-12-04 |
Family
ID=8863270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/478,005 Expired - Lifetime US7304776B2 (en) | 2001-05-15 | 2002-05-14 | Integrated optical structures with electrically conductive parts |
Country Status (5)
Country | Link |
---|---|
US (1) | US7304776B2 (en) |
AU (1) | AU2002304471A1 (en) |
DE (1) | DE10296813B4 (en) |
FR (1) | FR2824920B1 (en) |
WO (1) | WO2002093199A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014023804A3 (en) * | 2012-08-08 | 2014-04-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Directional coupler and optical waveguide |
WO2015101619A1 (en) * | 2013-12-31 | 2015-07-09 | Medlumics, S.L. | Structure for optical waveguide and contact wire intersection |
CN105022127A (en) * | 2014-04-16 | 2015-11-04 | 苹果公司 | Active silicon optical bench |
US10197818B2 (en) * | 2016-10-24 | 2019-02-05 | Electronics & Telecommunications Research Institute | Thermo-optic optical switch |
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-
2002
- 2002-05-14 US US10/478,005 patent/US7304776B2/en not_active Expired - Lifetime
- 2002-05-14 DE DE10296813.6T patent/DE10296813B4/en not_active Expired - Lifetime
- 2002-05-14 WO PCT/FR2002/001604 patent/WO2002093199A2/en not_active Application Discontinuation
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Also Published As
Publication number | Publication date |
---|---|
US7304776B2 (en) | 2007-12-04 |
WO2002093199A3 (en) | 2004-05-06 |
FR2824920A1 (en) | 2002-11-22 |
FR2824920B1 (en) | 2003-10-17 |
AU2002304471A1 (en) | 2002-11-25 |
DE10296813T5 (en) | 2004-04-29 |
DE10296813B4 (en) | 2018-06-14 |
WO2002093199A2 (en) | 2002-11-21 |
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